dwarning
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600ff13796
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Revert "Remove instance parameter temp. To specify offset to ambient temperature use dtemp instead."
This reverts commit 3340df46ca.
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5 months ago |
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dwarning
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3340df46ca
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Remove instance parameter temp. To specify offset to ambient temperature use dtemp instead.
Remove temp update double application for beta and series resistances and fix derivatives for selfheating model.
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5 months ago |
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dwarning
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a271ac821a
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Correct matrix entries for VDMOS pz analysis
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1 year ago |
Francesco Lannutti
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b900527341
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Fixed KLU binding for VDMOS
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5 years ago |
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Francesco Lannutti
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73626c62f8
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Add KLU support to VDMOS
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6 years ago |
Holger Vogt
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18478380ad
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Revise the SOA and add new parameters:
pd_max id_max idr_max te_max rth_ext derating
rth_ext is currently not used
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5 years ago |
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Holger Vogt
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3b245ddd82
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VDMOS, prepare SOA with new parameters
Model parameters pd_max, id_max, idr_max, and te_max
(power dissipated, drain current, drain reverse current, temperature)
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5 years ago |
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dwarning
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099e2c13eb
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VDMOS handle thermal as a flag
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6 years ago |
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dwarning
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280bea9d50
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restructering thermal update by unified function
introduce diode series resistor thermal contribution
separate naming of mos and diode model parameter
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6 years ago |
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dwarning
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bdd1e2faf6
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better place for prototype
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6 years ago |
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dwarning
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31a054f244
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prevent few gcc warnings
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6 years ago |
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dwarning
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3f4b24be89
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VDMOS change name of some matrix entries to make life easier
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6 years ago |
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dwarning
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d3da0d5ebf
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VDMOS consider body diode thermal contribution for self-heatine effect
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6 years ago |
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dwarning
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a850b2a070
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VDMOS diode current op information
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6 years ago |
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dwarning
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ee7599b33f
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VDMOS few variable name changes
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6 years ago |
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dwarning
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791f18053f
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change vdmos flag to thermal, not to confuse with b4soi
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6 years ago |
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dwarning
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e966ce5054
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alternative temperature model for extrinsic resistances and subthreshold range
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6 years ago |
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dwarning
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0fb1c6a000
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prevent program crash by misusing thermal model
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6 years ago |
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dwarning
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0362d63094
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update vdmos with self-heating network and tj and tcase terminal
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6 years ago |
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dwarning
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d9247cc322
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white spaces
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7 years ago |
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dwarning
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8b424dd3d3
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Introducing mobility reduction over Vgs. Model parameter: theta
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7 years ago |
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dwarning
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1363b7a6b2
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Reduce vdmos to a native 3 terminal version.
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7 years ago |
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Holger Vogt
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93e34540b8
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introduce parameter ksubthres, compatible to LTSPICE
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8 years ago |
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Holger Vogt
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63be243f72
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Add a simple quasi saturation model according to V. d'Alessandro e.a., 2001
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8 years ago |
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Holger Vogt
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72e03e7eab
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replace parameter name subthres by subslope
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8 years ago |
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Holger Vogt
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729eac4e84
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cweakinv, add model parameter model->VDMOSsubshift
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8 years ago |
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Holger Vogt
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43a6339071
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rename VDMOS_CGS, VDMOS_CGD, VDMOS_CDS to VDMOS_CAPGS, VDMOS_CAPGD, VDMOS_CAPDS C: current, CAP: capacitance, V: voltage, G: conductance, Q: charge
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8 years ago |
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Holger Vogt
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570aacbf02
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Remove VDMOS_CBS, VDMOS_CBD, VDMOS_CB
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8 years ago |
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Holger Vogt
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2b444a3423
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remove unused parameters VDMOS_VBS/VBD and VDMOS_CAPBD/BS/GS/GD/GB
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8 years ago |
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Holger Vogt
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62297b2450
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add weak inversion current capability
calibration of parameter subthres with LTSPICE is still missing.
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8 years ago |
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Holger Vogt
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4a3c707036
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add parallel resistor rds (between outer drain and source nodes, parallel to bulk diode)
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8 years ago |
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Holger Vogt
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f9b66af074
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add the mtriode parameter scale the triode region independently from saturation current
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8 years ago |
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Holger Vogt
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2bf70fa259
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add matrix entries for bulk diode
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8 years ago |
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Holger Vogt
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bfec119e5b
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Use better name for some parameters, cosmetics
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8 years ago |
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Holger Vogt
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4ac7a641ec
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diode model for bulk diode added code taken from dio.c etc. capacitance calculation for vdmos bulk cap removed, is now completely with the diode. An internal node added for series diode resistance RB
matrix entries not yet done!
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8 years ago |
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Holger Vogt
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1ce7fef519
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missing model parameters added
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8 years ago |
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Holger Vogt
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a4dc84ae35
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missing model parameters added
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8 years ago |
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Holger Vogt
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0dc0aa06c4
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re-introdeuce parameter phi Resulting temperature dependency of vto still not available
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8 years ago |
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Holger Vogt
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5b8c8072f3
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mobility and substrate related parameters and equations removed
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8 years ago |
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Holger Vogt
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0a213bea1a
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more on removing the sidewall capacitance
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8 years ago |
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Holger Vogt
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ef547eb8ff
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sidewall capacitance calculation removed
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8 years ago |
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Holger Vogt
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0ebb7348ca
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remove drain and source resistance contributions
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8 years ago |
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Holger Vogt
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84005efe8b
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lateral diffusion and overlap capacitance removed
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8 years ago |
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Holger Vogt
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d1497d8270
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rename parameter "pb" --> "vj"
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8 years ago |
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Holger Vogt
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9c1b403f79
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remove Gate.*OverlapCap
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8 years ago |
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Holger Vogt
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d63123a269
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gate resistance und gate conductance added, prime gate node added, not yet o.k. when rg is set, probably wrong signedness
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8 years ago |
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Holger Vogt
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40b9b18b01
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gate conductance added
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8 years ago |
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Holger Vogt
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5abe8a759b
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re-format for better readability, (whitespace only)
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8 years ago |
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Holger Vogt
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389c888948
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capacitance parameters cgdmin, cgdmax, a, cgs completely installed
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8 years ago |
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Holger Vogt
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eb1df52743
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remove unused VDMOS_CAPZEROBIASBD/BDSW/BS/BSSW aka VDMOSCbd/bdsw/bs/bssw
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8 years ago |
