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@ -5,6 +5,8 @@ Modified: 2000 AlansFixes |
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VDMOS: 2018 Holger Vogt, 2020 Dietmar Warning |
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**********/ |
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/* perform the temperature update to the vdmos */ |
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#include "ngspice/ngspice.h" |
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#include "ngspice/cktdefs.h" |
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#include "vdmosdefs.h" |
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@ -12,11 +14,9 @@ VDMOS: 2018 Holger Vogt, 2020 Dietmar Warning |
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#include "ngspice/sperror.h" |
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#include "ngspice/suffix.h" |
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int |
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VDMOStemp(GENmodel *inModel, CKTcircuit *ckt) |
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{ |
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VDMOSmodel *model = (VDMOSmodel *)inModel; |
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VDMOSinstance *here; |
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void VDMOStempUpdate(VDMOSmodel *inModel, VDMOSinstance *here, double Temp, CKTcircuit *ckt) { |
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VDMOSmodel *model = (VDMOSmodel*)inModel; |
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double egfet,egfet1; |
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double fact1,fact2; |
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@ -28,199 +28,179 @@ VDMOStemp(GENmodel *inModel, CKTcircuit *ckt) |
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double vt,vtnom; |
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double xfc; |
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/* loop through all the resistor models */ |
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for( ; model != NULL; model = VDMOSnextModel(model)) { |
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fact1 = model->VDMOStnom/REFTEMP; |
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vtnom = model->VDMOStnom*CONSTKoverQ; |
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kt1 = CONSTboltz * model->VDMOStnom; |
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egfet1 = 1.16-(7.02e-4*model->VDMOStnom*model->VDMOStnom)/ |
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(model->VDMOStnom+1108); |
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arg1 = -egfet1/(kt1+kt1)+1.1150877/(CONSTboltz*(REFTEMP+REFTEMP)); |
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pbfact1 = -2*vtnom *(1.5*log(fact1)+CHARGE*arg1); |
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xfc = log(1 - model->VDIOdepletionCapCoeff); |
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double arg; /* 1 - fc */ |
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double dt = Temp - model->VDMOStnom; |
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/* vdmos temperature model */ |
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ratio = Temp/model->VDMOStnom; |
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here->VDMOStTransconductance = model->VDMOStransconductance |
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* here->VDMOSm * pow(ratio, model->VDMOSmu); |
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here->VDMOStVth = model->VDMOSvth0 - model->VDMOStype * model->VDMOStcvth * dt; |
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here->VDMOStksubthres = model->VDMOSksubthres * (1.0 + (model->VDMOStksubthres1 * dt) + (model->VDMOStksubthres2 * dt * dt)); |
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if (model->VDMOStexp0Given) |
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here->VDMOSdrainResistance = model->VDMOSdrainResistance / here->VDMOSm * pow(ratio, model->VDMOStexp0); |
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else |
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here->VDMOSdrainResistance = model->VDMOSdrainResistance / here->VDMOSm * (1.0 + (model->VDMOStrd1 * dt) + (model->VDMOStrd2 * dt * dt)); |
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here->VDMOSgateConductance = here->VDMOSgateConductance / (1.0 + (model->VDMOStrg1 * dt) + (model->VDMOStrg2 * dt * dt)); |
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here->VDMOSsourceConductance = here->VDMOSsourceConductance / (1.0 + (model->VDMOStrs1 * dt) + (model->VDMOStrs2 * dt * dt)); |
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if (model->VDMOSqsGiven) |
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here->VDMOSqsResistance = model->VDMOSqsResistance / here->VDMOSm * pow(ratio, model->VDMOStexp1); |
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vt = Temp * CONSTKoverQ; |
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fact2 = Temp/REFTEMP; |
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kt = Temp * CONSTboltz; |
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egfet = 1.16-(7.02e-4*Temp*Temp)/ |
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(Temp+1108); |
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arg = -egfet/(kt+kt)+1.1150877/(CONSTboltz*(REFTEMP+REFTEMP)); |
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pbfact = -2*vt *(1.5*log(fact2)+CHARGE*arg); |
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phio = (model->VDMOSphi - pbfact1) / fact1; |
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here->VDMOStPhi = fact2 * phio + pbfact; /* needed for distortion analysis */ |
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/* body diode temperature model */ |
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double pbo, gmaold; |
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double gmanew, factor; |
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double tBreakdownVoltage, vte, cbv; |
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double xbv, xcbv, tol, iter; |
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double arg1_dT, arg2, arg2_dT; |
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/* Junction grading temperature adjust */ |
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factor = 1.0 + (model->VDIOgradCoeffTemp1 * dt) |
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+ (model->VDIOgradCoeffTemp2 * dt * dt); |
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here->VDIOtGradingCoeff = model->VDIOgradCoeff * factor; |
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pbo = (model->VDIOjunctionPot - pbfact1) / fact1; |
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gmaold = (model->VDIOjunctionPot - pbo) / pbo; |
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here->VDIOtJctCap = here->VDMOSm * model->VDIOjunctionCap / |
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(1 + here->VDIOtGradingCoeff* |
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(400e-6*(model->VDMOStnom - REFTEMP) - gmaold)); |
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here->VDIOtJctPot = pbfact + fact2*pbo; |
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gmanew = (here->VDIOtJctPot - pbo) / pbo; |
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here->VDIOtJctCap *= 1 + here->VDIOtGradingCoeff* |
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(400e-6*(Temp - REFTEMP) - gmanew); |
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vte = model->VDIOn*vt; |
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arg1 = ((Temp / model->VDMOStnom) - 1) * model->VDIOeg / vte; |
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arg1_dT = model->VDIOeg / (vte*model->VDMOStnom) |
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- model->VDIOeg*(Temp/model->VDMOStnom -1)/(vte*Temp); |
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arg2 = model->VDIOxti / model->VDIOn * log(Temp / model->VDMOStnom); |
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arg2_dT = model->VDIOxti / model->VDIOn / Temp; |
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here->VDIOtSatCur = here->VDMOSm * model->VDIOjctSatCur * exp(arg1 + arg2); |
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here->VDIOtSatCur_dT = here->VDMOSm * model->VDIOjctSatCur * exp(arg1 + arg2) * (arg1_dT + arg2_dT); |
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/* the defintion of f1, just recompute after temperature adjusting |
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* all the variables used in it */ |
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here->VDIOtF1 = here->VDIOtJctPot* |
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(1 - exp((1 - here->VDIOtGradingCoeff)*xfc)) / |
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(1 - here->VDIOtGradingCoeff); |
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/* same for Depletion Capacitance */ |
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here->VDIOtDepCap = model->VDIOdepletionCapCoeff * |
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here->VDIOtJctPot; |
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/* and Vcrit */ |
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here->VDIOtVcrit = vte * log(vte / (CONSTroot2*here->VDIOtSatCur)); |
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/* limit junction potential to max of 1/FC */ |
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if (here->VDIOtDepCap > 2.5) { |
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here->VDIOtJctPot = 2.5 / model->VDIOn; |
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here->VDIOtDepCap = model->VDIOn*here->VDIOtJctPot; |
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SPfrontEnd->IFerrorf(ERR_WARNING, |
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"%s: junction potential VJ too large, limited to %f", |
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model->VDMOSmodName, here->VDIOtJctPot); |
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} |
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/* perform model defaulting */ |
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if(!model->VDMOStnomGiven) { |
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model->VDMOStnom = ckt->CKTnomTemp; |
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} |
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/* and now to compute the breakdown voltage, again, using |
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* temperature adjusted basic parameters */ |
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if (model->VDIObvGiven) { |
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/* tlev == 0 */ |
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tBreakdownVoltage = fabs(model->VDIObv); |
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fact1 = model->VDMOStnom/REFTEMP; |
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vtnom = model->VDMOStnom*CONSTKoverQ; |
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kt1 = CONSTboltz * model->VDMOStnom; |
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egfet1 = 1.16-(7.02e-4*model->VDMOStnom*model->VDMOStnom)/ |
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(model->VDMOStnom+1108); |
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arg1 = -egfet1/(kt1+kt1)+1.1150877/(CONSTboltz*(REFTEMP+REFTEMP)); |
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pbfact1 = -2*vtnom *(1.5*log(fact1)+CHARGE*arg1); |
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/* now model parameter preprocessing */ |
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if (model->VDMOSphi <= 0.0) { |
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SPfrontEnd->IFerrorf(ERR_FATAL, |
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"%s: Phi is not positive.", model->VDMOSmodName); |
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return(E_BADPARM); |
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} |
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cbv = model->VDIOibv; |
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model->VDMOSoxideCapFactor = 3.9 * 8.854214871e-12 / 1e-07; /* use default Tox of 100nm */ |
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/* body diode model */ |
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/* limit activation energy to min of .1 */ |
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if (model->VDMOSeg<.1) { |
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if (cbv < here->VDIOtSatCur * tBreakdownVoltage / vt) { |
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cbv = here->VDIOtSatCur * tBreakdownVoltage / vt; |
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#ifdef TRACE |
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SPfrontEnd->IFerrorf(ERR_WARNING, "%s: breakdown current increased to %g to resolve", here->VDMOSname, cbv); |
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SPfrontEnd->IFerrorf(ERR_WARNING, |
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"%s: body diode activation energy too small, limited to 0.1", |
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model->VDMOSmodName); |
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model->VDMOSeg = .1; |
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"incompatibility with specified saturation current"); |
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#endif |
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xbv = tBreakdownVoltage; |
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} |
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/* limit depletion cap coeff to max of .95 */ |
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if (model->VDIOdepletionCapCoeff>.95) { |
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SPfrontEnd->IFerrorf(ERR_WARNING, |
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"%s: coefficient Fc too large, limited to 0.95", |
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model->VDMOSmodName); |
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model->VDIOdepletionCapCoeff = .95; |
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else { |
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tol = ckt->CKTreltol*cbv; |
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xbv = tBreakdownVoltage - model->VDIObrkdEmissionCoeff*vt*log(1 + cbv / |
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(here->VDIOtSatCur)); |
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iter = 0; |
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for (iter = 0; iter < 25; iter++) { |
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xbv = tBreakdownVoltage - model->VDIObrkdEmissionCoeff*vt*log(cbv / |
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(here->VDIOtSatCur) + 1 - xbv / vt); |
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xcbv = here->VDIOtSatCur * |
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(exp((tBreakdownVoltage - xbv) / (model->VDIObrkdEmissionCoeff*vt)) - 1 + xbv / vt); |
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if (fabs(xcbv - cbv) <= tol) goto matched; |
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} |
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#ifdef TRACE |
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SPfrontEnd->IFerrorf(ERR_WARNING, "%s: unable to match forward and reverse diode regions: bv = %g, ibv = %g", here->VDMOSname, xbv, xcbv); |
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#endif |
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} |
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/* set lower limit of saturation current */ |
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if (model->VDIOjctSatCur < ckt->CKTepsmin) |
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model->VDIOjctSatCur = ckt->CKTepsmin; |
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matched: |
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here->VDIOtBrkdwnV = xbv; |
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} |
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xfc = log(1 - model->VDIOdepletionCapCoeff); |
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/* transit time temperature adjust */ |
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factor = 1.0 + (model->VDIOtranTimeTemp1 * dt) |
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+ (model->VDIOtranTimeTemp2 * dt * dt); |
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here->VDIOtTransitTime = model->VDIOtransitTime * factor; |
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/* loop through all instances of the model */ |
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for(here = VDMOSinstances(model); here!= NULL; |
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here = VDMOSnextInstance(here)) { |
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double arg; /* 1 - fc */ |
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/* Series resistance temperature adjust */ |
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factor = 1.0 + (model->VDIOtrb1) * dt |
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+ (model->VDIOtrb2 * dt * dt); |
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here->VDIOtConductance = here->VDIOconductance / factor; |
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here->VDIOtConductance_dT = -here->VDIOconductance * (model->VDIOtrb1 + model->VDIOtrb2 * dt) / (factor*factor); |
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/* perform the parameter defaulting */ |
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if(!here->VDMOSdtempGiven) { |
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here->VDMOSdtemp = 0.0; |
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} |
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if(!here->VDMOStempGiven) { |
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here->VDMOStemp = ckt->CKTtemp + here->VDMOSdtemp; |
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} |
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here->VDIOtF2 = exp((1 + here->VDIOtGradingCoeff)*xfc); |
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here->VDIOtF3 = 1 - model->VDIOdepletionCapCoeff* |
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(1 + here->VDIOtGradingCoeff); |
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} |
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double dt = here->VDMOStemp - model->VDMOStnom; |
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/* vdmos temperature model */ |
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ratio = here->VDMOStemp/model->VDMOStnom; |
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here->VDMOStTransconductance = model->VDMOStransconductance |
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* here->VDMOSm * pow(ratio, model->VDMOSmu); |
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here->VDMOStVth = model->VDMOSvth0 - model->VDMOStype * model->VDMOStcvth * dt; |
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here->VDMOStksubthres = model->VDMOSksubthres * (1.0 + (model->VDMOStksubthres1 * dt) + (model->VDMOStksubthres2 * dt * dt)); |
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if (model->VDMOStexp0Given) |
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here->VDMOSdrainResistance = model->VDMOSdrainResistance / here->VDMOSm * pow(ratio, model->VDMOStexp0); |
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else |
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here->VDMOSdrainResistance = model->VDMOSdrainResistance / here->VDMOSm * (1.0 + (model->VDMOStrd1 * dt) + (model->VDMOStrd2 * dt * dt)); |
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here->VDMOSgateConductance = here->VDMOSgateConductance / (1.0 + (model->VDMOStrg1 * dt) + (model->VDMOStrg2 * dt * dt)); |
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here->VDMOSsourceConductance = here->VDMOSsourceConductance / (1.0 + (model->VDMOStrs1 * dt) + (model->VDMOStrs2 * dt * dt)); |
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if (model->VDMOSqsGiven) |
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here->VDMOSqsResistance = model->VDMOSqsResistance / here->VDMOSm * pow(ratio, model->VDMOStexp1); |
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vt = here->VDMOStemp * CONSTKoverQ; |
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fact2 = here->VDMOStemp/REFTEMP; |
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kt = here->VDMOStemp * CONSTboltz; |
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egfet = 1.16-(7.02e-4*here->VDMOStemp*here->VDMOStemp)/ |
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(here->VDMOStemp+1108); |
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arg = -egfet/(kt+kt)+1.1150877/(CONSTboltz*(REFTEMP+REFTEMP)); |
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pbfact = -2*vt *(1.5*log(fact2)+CHARGE*arg); |
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phio = (model->VDMOSphi - pbfact1) / fact1; |
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here->VDMOStPhi = fact2 * phio + pbfact; /* needed for distortion analysis */ |
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/* body diode temperature model */ |
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double pbo, gmaold; |
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double gmanew, factor; |
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double tBreakdownVoltage, vte, cbv; |
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double xbv, xcbv, tol, iter; |
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/* Junction grading temperature adjust */ |
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factor = 1.0 + (model->VDIOgradCoeffTemp1 * dt) |
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+ (model->VDIOgradCoeffTemp2 * dt * dt); |
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here->VDIOtGradingCoeff = model->VDIOgradCoeff * factor; |
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pbo = (model->VDIOjunctionPot - pbfact1) / fact1; |
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gmaold = (model->VDIOjunctionPot - pbo) / pbo; |
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here->VDIOtJctCap = here->VDMOSm * model->VDIOjunctionCap / |
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(1 + here->VDIOtGradingCoeff* |
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(400e-6*(model->VDMOStnom - REFTEMP) - gmaold)); |
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here->VDIOtJctPot = pbfact + fact2*pbo; |
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gmanew = (here->VDIOtJctPot - pbo) / pbo; |
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here->VDIOtJctCap *= 1 + here->VDIOtGradingCoeff* |
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(400e-6*(here->VDMOStemp - REFTEMP) - gmanew); |
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here->VDIOtSatCur = here->VDMOSm * model->VDIOjctSatCur * exp( |
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((here->VDMOStemp / model->VDMOStnom) - 1) * |
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model->VDMOSeg / (model->VDMOSn*vt) + |
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model->VDMOSxti / model->VDMOSn * |
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log(here->VDMOStemp / model->VDMOStnom)); |
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/* the defintion of f1, just recompute after temperature adjusting |
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* all the variables used in it */ |
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here->VDIOtF1 = here->VDIOtJctPot* |
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(1 - exp((1 - here->VDIOtGradingCoeff)*xfc)) / |
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(1 - here->VDIOtGradingCoeff); |
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/* same for Depletion Capacitance */ |
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here->VDIOtDepCap = model->VDIOdepletionCapCoeff * |
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here->VDIOtJctPot; |
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/* and Vcrit */ |
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vte = model->VDMOSn*vt; |
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here->VDIOtVcrit = vte * log(vte / (CONSTroot2*here->VDIOtSatCur)); |
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/* limit junction potential to max of 1/FC */ |
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if (here->VDIOtDepCap > 2.5) { |
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here->VDIOtJctPot = 2.5 / model->VDMOSn; |
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here->VDIOtDepCap = model->VDMOSn*here->VDIOtJctPot; |
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SPfrontEnd->IFerrorf(ERR_WARNING, |
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"%s: junction potential VJ too large, limited to %f", |
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model->VDMOSmodName, here->VDIOtJctPot); |
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} |
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int |
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VDMOStemp(GENmodel *inModel, CKTcircuit *ckt) |
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{ |
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VDMOSmodel *model = (VDMOSmodel*)inModel; |
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VDMOSinstance *here; |
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/* loop through all the vdmos models */ |
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for( ; model != NULL; model = VDMOSnextModel(model)) { |
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/* and now to compute the breakdown voltage, again, using |
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* temperature adjusted basic parameters */ |
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if (model->VDMOSbvGiven) { |
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/* tlev == 0 */ |
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tBreakdownVoltage = fabs(model->VDMOSbv); |
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/* loop through all the instances */ |
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for(here=VDMOSinstances(model);here;here=VDMOSnextInstance(here)) { |
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cbv = model->VDMOSibv; |
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if(!here->VDMOSdtempGiven) here->VDMOSdtemp = 0.0; |
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if (cbv < here->VDIOtSatCur * tBreakdownVoltage / vt) { |
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cbv = here->VDIOtSatCur * tBreakdownVoltage / vt; |
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#ifdef TRACE |
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SPfrontEnd->IFerrorf(ERR_WARNING, "%s: breakdown current increased to %g to resolve", here->VDMOSname, cbv); |
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SPfrontEnd->IFerrorf(ERR_WARNING, |
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"incompatibility with specified saturation current"); |
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#endif |
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xbv = tBreakdownVoltage; |
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} |
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else { |
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tol = ckt->CKTreltol*cbv; |
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xbv = tBreakdownVoltage - model->VDIObrkdEmissionCoeff*vt*log(1 + cbv / |
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(here->VDIOtSatCur)); |
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iter = 0; |
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for (iter = 0; iter < 25; iter++) { |
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xbv = tBreakdownVoltage - model->VDIObrkdEmissionCoeff*vt*log(cbv / |
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(here->VDIOtSatCur) + 1 - xbv / vt); |
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xcbv = here->VDIOtSatCur * |
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(exp((tBreakdownVoltage - xbv) / (model->VDIObrkdEmissionCoeff*vt)) - 1 + xbv / vt); |
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if (fabs(xcbv - cbv) <= tol) goto matched; |
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} |
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#ifdef TRACE |
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SPfrontEnd->IFerrorf(ERR_WARNING, "%s: unable to match forward and reverse diode regions: bv = %g, ibv = %g", here->VDMOSname, xbv, xcbv); |
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#endif |
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} |
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matched: |
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here->VDIOtBrkdwnV = xbv; |
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} |
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if(!here->VDMOStempGiven) |
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here->VDMOStemp = ckt->CKTtemp + here->VDMOSdtemp; |
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/* transit time temperature adjust */ |
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factor = 1.0 + (model->VDIOtranTimeTemp1 * dt) |
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+ (model->VDIOtranTimeTemp2 * dt * dt); |
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here->VDIOtTransitTime = model->VDIOtransitTime * factor; |
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VDMOStempUpdate(model, here, here->VDMOStemp, ckt); |
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/* Series resistance temperature adjust */ |
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here->VDIOtConductance = here->VDIOconductance / (1.0 + (model->VDMOStrb1 * dt) + (model->VDMOStrb2 * dt * dt)); |
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} /* instance */ |
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here->VDIOtF2 = exp((1 + here->VDIOtGradingCoeff)*xfc); |
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here->VDIOtF3 = 1 - model->VDIOdepletionCapCoeff* |
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(1 + here->VDIOtGradingCoeff); |
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} |
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} |
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} /* model */ |
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return(OK); |
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} |
dwarning
6 years ago
Holger Vogt