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@ -22,17 +22,8 @@ VDMOStemp(GENmodel *inModel, CKTcircuit *ckt) |
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double kt,kt1; |
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double arg1; |
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double ratio,ratio4; |
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double phio; |
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double pbo; |
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double gmanew,gmaold; |
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double capfact; |
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double pbfact1,pbfact; |
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double vt,vtnom; |
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double wkfngs; |
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double wkfng; |
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double fermig; |
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double fermis; |
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double vfb; |
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/* loop through all the resistor models */ |
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for( ; model != NULL; model = VDMOSnextModel(model)) { |
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@ -52,65 +43,7 @@ VDMOStemp(GENmodel *inModel, CKTcircuit *ckt) |
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/* now model parameter preprocessing */ |
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if (model->VDMOSphi <= 0.0) { |
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SPfrontEnd->IFerrorf (ERR_FATAL, |
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"%s: Phi is not positive.", model->VDMOSmodName); |
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return(E_BADPARM); |
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} |
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if(!model->VDMOSoxideThicknessGiven || model->VDMOSoxideThickness == 0) { |
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model->VDMOSoxideCapFactor = 0; |
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} else { |
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model->VDMOSoxideCapFactor = 3.9 * 8.854214871e-12/ |
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model->VDMOSoxideThickness; |
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if(!model->VDMOStransconductanceGiven) { |
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if(!model->VDMOSsurfaceMobilityGiven) { |
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model->VDMOSsurfaceMobility=600; |
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} |
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model->VDMOStransconductance = model->VDMOSsurfaceMobility * |
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model->VDMOSoxideCapFactor * 1e-4 /*(m**2/cm**2)*/; |
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} |
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if(model->VDMOSsubstrateDopingGiven) { |
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if(model->VDMOSsubstrateDoping*1e6 /*(cm**3/m**3)*/ >1.45e16) { |
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if(!model->VDMOSphiGiven) { |
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model->VDMOSphi = 2*vtnom* |
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log(model->VDMOSsubstrateDoping* |
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1e6/*(cm**3/m**3)*//1.45e16); |
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model->VDMOSphi = MAX(.1,model->VDMOSphi); |
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} |
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fermis = model->VDMOStype * .5 * model->VDMOSphi; |
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wkfng = 3.2; |
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if(!model->VDMOSgateTypeGiven) model->VDMOSgateType=1; |
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if(model->VDMOSgateType != 0) { |
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fermig = model->VDMOStype *model->VDMOSgateType*.5*egfet1; |
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wkfng = 3.25 + .5 * egfet1 - fermig; |
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} |
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wkfngs = wkfng - (3.25 + .5 * egfet1 +fermis); |
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if(!model->VDMOSgammaGiven) { |
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model->VDMOSgamma = sqrt(2 * 11.70 * 8.854214871e-12 * |
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CHARGE * model->VDMOSsubstrateDoping* |
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1e6/*(cm**3/m**3)*/)/ |
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model->VDMOSoxideCapFactor; |
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} |
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if(!model->VDMOSvt0Given) { |
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if(!model->VDMOSsurfaceStateDensityGiven) |
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model->VDMOSsurfaceStateDensity=0; |
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vfb = wkfngs - |
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model->VDMOSsurfaceStateDensity * |
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1e4 /*(cm**2/m**2)*/ * |
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CHARGE/model->VDMOSoxideCapFactor; |
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model->VDMOSvt0 = vfb + model->VDMOStype * |
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(model->VDMOSgamma * sqrt(model->VDMOSphi)+ |
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model->VDMOSphi); |
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} |
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} else { |
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model->VDMOSsubstrateDoping = 0; |
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SPfrontEnd->IFerrorf (ERR_FATAL, |
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"%s: Nsub < Ni", model->VDMOSmodName); |
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return(E_BADPARM); |
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} |
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} |
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} |
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model->VDMOSoxideCapFactor = 0; |
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/* loop through all instances of the model */ |
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@ -147,39 +80,7 @@ VDMOStemp(GENmodel *inModel, CKTcircuit *ckt) |
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ratio4 = ratio * sqrt(ratio); |
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here->VDMOStTransconductance = model->VDMOStransconductance / ratio4; |
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here->VDMOStSurfMob = model->VDMOSsurfaceMobility/ratio4; |
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phio= (model->VDMOSphi-pbfact1)/fact1; |
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here->VDMOStPhi = fact2 * phio + pbfact; |
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here->VDMOStVbi = |
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model->VDMOSvt0 - model->VDMOStype * |
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(model->VDMOSgamma* sqrt(model->VDMOSphi)) |
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+.5*(egfet1-egfet) |
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+ model->VDMOStype*.5* (here->VDMOStPhi-model->VDMOSphi); |
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here->VDMOStVto = here->VDMOStVbi + model->VDMOStype * |
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model->VDMOSgamma * sqrt(here->VDMOStPhi); |
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here->VDMOStSatCur = model->VDMOSjctSatCur* |
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exp(-egfet/vt+egfet1/vtnom); |
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here->VDMOStSatCurDens = model->VDMOSjctSatCurDensity * |
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exp(-egfet/vt+egfet1/vtnom); |
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pbo = (model->VDMOSbulkJctPotential - pbfact1)/fact1; |
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gmaold = (model->VDMOSbulkJctPotential-pbo)/pbo; |
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capfact = 1/(1+model->VDMOSbulkJctBotGradingCoeff* |
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(4e-4*(model->VDMOStnom-REFTEMP)-gmaold)); |
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here->VDMOStCbd = model->VDMOScapBD * capfact; |
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here->VDMOStCbs = model->VDMOScapBS * capfact; |
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here->VDMOStCj = model->VDMOSbulkCapFactor * capfact; |
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here->VDMOStBulkPot = fact2 * pbo+pbfact; |
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gmanew = (here->VDMOStBulkPot-pbo)/pbo; |
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capfact = (1+model->VDMOSbulkJctBotGradingCoeff* |
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(4e-4*(here->VDMOStemp-REFTEMP)-gmanew)); |
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here->VDMOStCbd *= capfact; |
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here->VDMOStCbs *= capfact; |
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here->VDMOStCj *= capfact; |
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here->VDMOStDepCap = model->VDMOSfwdCapDepCoeff * here->VDMOStBulkPot; |
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if (here->VDMOStSatCurDens == 0) { |
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here->VDMOSsourceVcrit = here->VDMOSdrainVcrit = |
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vt*log(vt/(CONSTroot2*here->VDMOSm*here->VDMOStSatCur)); |
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} |
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here->VDMOStVto = model->VDMOSvt0; |
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here->VDMOSCbd = 0; |
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here->VDMOSf2d = 0; |
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Holger Vogt
8 years ago
rlar