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75 lines
2.8 KiB
75 lines
2.8 KiB
*** SPICE Models
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*** Models created by Daniel Foty.
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*** (c) 2001, Gilgamesh Associates and EPFL – All rights reserved.
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*** These models are provided without warranty or support.
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*** These models represent a completely fictitious 0.15um process, and do
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*** NOT correspond to any real silicon process. They are provided expressly for
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*** use in the examples provided in this text, and should not be used for any
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*** real silicon product design.
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*** NMOS EKV MOSFET Model ***************************************************
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*** Level=44 in WinSPICE and ELDO, Level=55 in ADM/HSPICE, Level=5 in PSPICE,
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*** Level=EKV in Spectre
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*** Lmin=0.15u Wmin=1.05u (If Scale=0.15u then Lmin=1 and Wmin=7)
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*—————
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.MODEL nmos nmos
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+ LEVEL=44
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*** Setup Parameters
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+ UPDATE=2.6
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*** Process Related Model Parameters
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+ COX=9.083E-3 XJ=0.15E-6
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*** Intrinsic Model Parameters
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+ VTO=0.4 GAMMA=0.71 PHI=0.97 KP=453E-6
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+ E0=88.0E6 UCRIT=4.0E6
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+ DL=-0.05E-6 DW=-0.02E-6
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+ LAMBDA = 0.30 LETA=0.28 WETA=0
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+ Q0=280E-6 LK=0.5E-6
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*** Substrate Current Parameters
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+ IBN=1.0 IBA=200E6 IBB=350E6
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*** Intrinsic Model Temperature Parameters
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+ TNOM=27.0 TCV=1.5E-3 BEX=-1.5 UCEX=1.7 IBBT=0
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*** 1/f Noise Model Parameters
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+ KF=1E-27 AF=1
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*** Series Resistance and Area Calculation Parameters
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+ HDIF=0.24e-6 ACM=3 RSH=5.0 RS=1250.526
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+ RD=1250.526 LDIF=0.07e-6
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*** Junction Current Parameters
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+ JS=1.0E-6 JSW=5.0E-11 XTI=0 N=1.5
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*** Junction Capacitances Parameters
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+ CJ=1.0E-3 CJSW=2.0E-10 CJGATE=5.0E-10
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+ MJ=0.5 MJSW=0.3 PB=0.9 PBSW=0.9 FC=0.5
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*** Gate Overlap Capacitances
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+ CGSO=3.0E-10 CGDO=3.0E-10 CGBO=3.0E-11
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*** PMOS EKV MOSFET Model ***************************************************
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*** Level=44 in WinSPICE and ELDO, Level=55 in ADM/HSPICE, Level=5 in PSPICE,
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*** Level=EKV in Spectre
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*** Lmin=0.15u Wmin=1.05u (If Scale=0.15u then Lmin=1 and Wmin=7)
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*—————
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.MODEL pmos pmos
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+ LEVEL = 44
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*** Setup Parameters
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+ UPDATE = 2.6
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*** Process Related Model Parameters
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+ COX=9.083E-3 XJ=0.15E-6
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*** Intrinsic Model Parameters
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+ VTO=-0.4 GAMMA=0.69 PHI=0.87 KP=92.15E-6
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+ E0=51.0E6 UCRIT=18.0E6
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+ DL=-0.05E-6 DW=-0.03E-6
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+ LAMBDA=1.1 LETA=0.45 WETA=0
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+ Q0=200E-6 LK=0.6E-6
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*** Substrate Current Parameters
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+ IBN=1.0 IBA=0.0 IBB=300E6
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*** Intrinsic Model Temperature Parameters
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+ TNOM=25.0 TCV=-1.4E-3 BEX=-1.4 UCEX=2.0 IBBT=0.0
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*** 1/f Noise Model Parameters
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+ KF=1.0E-28 AF=1
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*** Series Resistance and Area Calculation Parameters
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+ HDIF=0.24E-6 ACM=3 RSH=5.0 RS=3145.263
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+ RD=3145.263 LDIF=0.07e-6
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*** Junction Current Parameters
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+ JS=1.0E-7 JSW=5.0E-12 XTI=0 N=1.8
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*** Junction Capacitances Parameters
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+ CJ=1.3E-3 CJSW=2.5E-10 CJGATE=5.5E-10
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+ MJ=0.5 MJSW=0.35 PB=0.9 PBSW=0.9 FC=0.5
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*** Gate Overlap Capacitances
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+ CGSO=3.2E-10 CGDO=3.2E-10 CGBO=3.0E-11
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