*** SPICE Models
*** Models created by Daniel Foty.
*** (c) 2001, Gilgamesh Associates and EPFL – All rights reserved.
*** These models are provided without warranty or support.
*** These models represent a completely fictitious 0.15um process, and do
*** NOT correspond to any real silicon process. They are provided expressly for
*** use in the examples provided in this text, and should not be used for any 
*** real silicon product design.
*** NMOS EKV MOSFET Model ***************************************************
*** Level=44 in WinSPICE and ELDO, Level=55 in ADM/HSPICE, Level=5 in PSPICE, 
*** Level=EKV in Spectre
*** Lmin=0.15u Wmin=1.05u (If Scale=0.15u then Lmin=1 and Wmin=7)
*—————
.MODEL nmos nmos
+ LEVEL=44
*** Setup Parameters
+ UPDATE=2.6
*** Process Related Model Parameters
+ COX=9.083E-3 XJ=0.15E-6
*** Intrinsic Model Parameters
+ VTO=0.4 GAMMA=0.71 PHI=0.97 KP=453E-6
+ E0=88.0E6 UCRIT=4.0E6 
+ DL=-0.05E-6 DW=-0.02E-6
+ LAMBDA = 0.30 LETA=0.28 WETA=0
+ Q0=280E-6 LK=0.5E-6
*** Substrate Current Parameters
+ IBN=1.0 IBA=200E6 IBB=350E6
*** Intrinsic Model Temperature Parameters
+ TNOM=27.0 TCV=1.5E-3 BEX=-1.5 UCEX=1.7 IBBT=0
*** 1/f Noise Model Parameters
+ KF=1E-27 AF=1
*** Series Resistance and Area Calculation Parameters
+ HDIF=0.24e-6 ACM=3 RSH=5.0 RS=1250.526
+ RD=1250.526 LDIF=0.07e-6
*** Junction Current Parameters
+ JS=1.0E-6 JSW=5.0E-11 XTI=0 N=1.5
*** Junction Capacitances Parameters
+ CJ=1.0E-3 CJSW=2.0E-10 CJGATE=5.0E-10
+ MJ=0.5 MJSW=0.3 PB=0.9 PBSW=0.9 FC=0.5
*** Gate Overlap Capacitances
+ CGSO=3.0E-10 CGDO=3.0E-10 CGBO=3.0E-11
 
*** PMOS EKV MOSFET Model ***************************************************
*** Level=44 in WinSPICE and ELDO, Level=55 in ADM/HSPICE, Level=5 in PSPICE, 
*** Level=EKV in Spectre
*** Lmin=0.15u Wmin=1.05u (If Scale=0.15u then Lmin=1 and Wmin=7)
*—————
.MODEL pmos pmos
+ LEVEL = 44
*** Setup Parameters
+ UPDATE = 2.6
*** Process Related Model Parameters
+ COX=9.083E-3 XJ=0.15E-6
*** Intrinsic Model Parameters
+ VTO=-0.4 GAMMA=0.69 PHI=0.87 KP=92.15E-6
+ E0=51.0E6 UCRIT=18.0E6
+ DL=-0.05E-6 DW=-0.03E-6
+ LAMBDA=1.1 LETA=0.45 WETA=0
+ Q0=200E-6 LK=0.6E-6
*** Substrate Current Parameters 
+ IBN=1.0 IBA=0.0 IBB=300E6 
*** Intrinsic Model Temperature Parameters 
+ TNOM=25.0 TCV=-1.4E-3 BEX=-1.4 UCEX=2.0 IBBT=0.0 
*** 1/f Noise Model Parameters 
+ KF=1.0E-28 AF=1 
*** Series Resistance and Area Calculation Parameters
+ HDIF=0.24E-6 ACM=3 RSH=5.0 RS=3145.263
+ RD=3145.263 LDIF=0.07e-6
*** Junction Current Parameters
+ JS=1.0E-7 JSW=5.0E-12 XTI=0 N=1.8 
*** Junction Capacitances Parameters 
+ CJ=1.3E-3 CJSW=2.5E-10 CJGATE=5.5E-10 
+ MJ=0.5 MJSW=0.35 PB=0.9 PBSW=0.9 FC=0.5 
*** Gate Overlap Capacitances 
+ CGSO=3.2E-10 CGDO=3.2E-10 CGBO=3.0E-11