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355 lines
11 KiB
355 lines
11 KiB
/**********
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Copyright 1990 Regents of the University of California. All rights reserved.
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Author: 1987 Gary W. Ng
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**********/
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/*
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* NevalSrc (noise, lnNoise, ckt, type, node1, node2, param)
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* This routine evaluates the noise due to different physical
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* phenomena. This includes the "shot" noise associated with dc
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* currents in semiconductors and the "thermal" noise associated with
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* resistance. Although semiconductors also display "flicker" (1/f)
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* noise, the lack of a unified model requires us to handle it on a
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* "case by case" basis. What we CAN provide, though, is the noise
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* gain associated with the 1/f source.
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*/
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/*
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Modified by Alessio Cacciatori: S-Params noise is calculated as noise current
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correlation matrix. Per each noise source, the noise voltage at RF ports is converted
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as an input noise current source by using (already availalble) Y matrix.
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Outside RFSPICE declaration, code is legacy NGSPICE code.
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*/
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#include "ngspice/ngspice.h"
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#include "ngspice/cktdefs.h"
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#include "ngspice/const.h"
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#include "ngspice/noisedef.h"
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#ifdef RFSPICE
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extern CMat* eyem;
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extern CMat* zref;
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extern CMat* gn;
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extern CMat* gninv;
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extern CMat* vNoise;
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extern CMat* iNoise;
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#include "../../maths/dense/denseinlines.h"
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#endif
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void
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NevalSrc(double* noise, double* lnNoise, CKTcircuit* ckt, int type, int node1, int node2, double param)
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{
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#ifdef RFSPICE
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if (ckt->CKTcurrentAnalysis & DOING_SP)
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{
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double inoise = 0.0;
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switch (type) {
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case SHOTNOISE:
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inoise = 2 * CHARGE * fabs(param); /* param is the dc current in a semiconductor */
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*noise = inoise;
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*lnNoise = log(MAX(*noise, N_MINLOG));
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break;
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case THERMNOISE:
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inoise = 4 * CONSTboltz * ckt->CKTtemp * param; /* param is the conductance of a resistor */
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*noise = inoise;
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*lnNoise = log(MAX(*noise, N_MINLOG));
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break;
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case N_GAIN:
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inoise = 0.0;
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*noise = cmodu(csubco(ckt->CKTadjointRHS->d[0][node1], ckt->CKTadjointRHS->d[0][node2]));
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break;
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}
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inoise = sqrt(inoise);
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// Calculate input equivalent noise current source (we have port impedance attached)
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for (int s = 0; s < ckt->CKTportCount; s++)
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vNoise->d[0][s] = cmultdo(csubco(ckt->CKTadjointRHS->d[s][node1], ckt->CKTadjointRHS->d[s][node2]), inoise);
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for (int d = 0; d < ckt->CKTportCount; d++)
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{
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cplx in;
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double yport = 1.0 / zref->d[d][d].re;
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in.re = vNoise->d[0][d].re * yport;
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in.im = vNoise->d[0][d].im * yport;
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for (int s = 0; s < ckt->CKTportCount; s++)
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caddc(&in, in, cmultco(ckt->CKTYmat->d[d][s], vNoise->d[0][s]));
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iNoise->d[0][d] = in;
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}
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for (int d = 0; d < ckt->CKTportCount; d++)
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for (int s = 0; s < ckt->CKTportCount; s++)
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ckt->CKTNoiseCYmat->d[d][s] = caddco(ckt->CKTNoiseCYmat->d[d][s], cmultco(iNoise->d[0][d], conju(iNoise->d[0][s])));
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return;
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}
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#endif
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double realVal;
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double imagVal;
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double gain;
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realVal = ckt->CKTrhs[node1] - ckt->CKTrhs[node2];
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imagVal = ckt->CKTirhs[node1] - ckt->CKTirhs[node2];
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gain = (realVal * realVal) + (imagVal * imagVal);
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switch (type) {
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case SHOTNOISE:
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*noise = gain * 2 * CHARGE * fabs(param); /* param is the dc current in a semiconductor */
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*lnNoise = log(MAX(*noise, N_MINLOG));
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break;
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case THERMNOISE:
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*noise = gain * 4 * CONSTboltz * ckt->CKTtemp * param; /* param is the conductance of a resistor */
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*lnNoise = log(MAX(*noise, N_MINLOG));
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break;
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case N_GAIN:
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*noise = gain;
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break;
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}
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}
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/*
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* NevalSrc2 (noise, lnNoise, ckt, type, node1, node2, param, node3, node4, param2)
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* This routine is a modified version of NevalSrc() that computes
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* the output noise due to two fully-correlated noise sources. It is
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* useful for implementing correlated gate and drain noises in MOSFETs.
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*
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* Like NevalSrc(), it evaluates the noise due to different physical
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* phenomena. This includes the "shot" noise associated with dc
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* currents in semiconductors and the "thermal" noise associated with
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* resistance. Although semiconductors also display "flicker" (1/f)
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* noise, the lack of a unified model requires us to handle it on a
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* "case by case" basis. What we CAN provide, though, is the noise
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* gain associated with the 1/f source.
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*/
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/* Modified by Darsen Lu for BSIM4 tnoiMod=2 10/10/2010
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*/
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void
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NevalSrc2(
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double* noise,
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double* lnNoise,
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CKTcircuit* ckt,
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int type,
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int node1,
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int node2,
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double param1,
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int node3,
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int node4,
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double param2,
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double phi21) /* Phase of signal 2 relative to signal 1 */
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{
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double realVal1, imagVal1;
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double realVal2, imagVal2;
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double realOut, imagOut, param_gain;
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double T0, T1, T2, T3;
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#ifdef RFSPICE
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if (ckt->CKTcurrentAnalysis & DOING_SP)
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{
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double knoise = 0.0;
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T0 = sqrt(param1);
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T1 = sqrt(param2);
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cplx cfact;
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cfact.re = cos(phi21);
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cfact.im = sin(phi21);
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switch (type) {
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case SHOTNOISE:
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knoise = 2 * CHARGE; /* param is the dc current in a semiconductor */
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*noise = knoise;
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*lnNoise = log(MAX(*noise, N_MINLOG));
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break;
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case THERMNOISE:
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knoise = 4 * CONSTboltz * ckt->CKTtemp; /* param is the conductance of a resistor */
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// For this simulation we are not collecting any statistics on output nodes. Force noise to 0
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*noise = knoise;
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*lnNoise = log(MAX(*noise, N_MINLOG));
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break;
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case N_GAIN:
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knoise = 0.0;
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*noise = cmodu(csubco(ckt->CKTadjointRHS->d[0][node1], ckt->CKTadjointRHS->d[0][node2]));
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break;
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}
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knoise = sqrt(knoise);
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// Calculate input equivalent noise current source (we have port impedance attached)
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for (int s = 0; s < ckt->CKTportCount; s++)
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{
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cplx vNoiseA = cmultdo(csubco(ckt->CKTadjointRHS->d[s][node1], ckt->CKTadjointRHS->d[s][node2]), knoise * sqrt(param1));
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cplx vNoiseB = cmultco(cmultdo(csubco(ckt->CKTadjointRHS->d[s][node3], ckt->CKTadjointRHS->d[s][node4]), knoise * sqrt(param1)), cfact);
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vNoise->d[0][s] = caddco(vNoiseA, vNoiseB);
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}
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for (int d = 0; d < ckt->CKTportCount; d++)
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{
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double yport = 1.0 / zref->d[d][d].re;
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cplx in;
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in.re = vNoise->d[0][d].re * yport;
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in.im = vNoise->d[0][d].im * yport;
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for (int s = 0; s < ckt->CKTportCount; s++)
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caddc(&in, in, cmultco(ckt->CKTYmat->d[d][s], vNoise->d[0][s]));
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iNoise->d[0][d] = in;
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}
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for (int d = 0; d < ckt->CKTportCount; d++)
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for (int s = 0; s < ckt->CKTportCount; s++)
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ckt->CKTNoiseCYmat->d[d][s] = caddco(ckt->CKTNoiseCYmat->d[d][s], cmultco(iNoise->d[0][d], conju(iNoise->d[0][s])));
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return;
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}
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#endif
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realVal1 = ckt->CKTrhs[node1] - ckt->CKTrhs[node2];
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imagVal1 = ckt->CKTirhs[node1] - ckt->CKTirhs[node2];
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realVal2 = ckt->CKTrhs[node3] - ckt->CKTrhs[node4];
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imagVal2 = ckt->CKTirhs[node3] - ckt->CKTirhs[node4];
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T0 = sqrt(param1);
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T1 = sqrt(param2);
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T2 = T1 * cos(phi21);
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T3 = T1 * sin(phi21);
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realOut = T0 * realVal1 + T2 * realVal2 - T3 * imagVal2;
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imagOut = T0 * imagVal1 + T2 * imagVal2 + T3 * realVal2;
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param_gain = (realOut * realOut) + (imagOut * imagOut);
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switch (type) {
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case SHOTNOISE:
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*noise = 2.0 * CHARGE * fabs(param_gain); /* param is the dc current in a semiconductor */
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*lnNoise = log(MAX(*noise, N_MINLOG));
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break;
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case THERMNOISE:
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*noise = 4.0 * CONSTboltz * ckt->CKTtemp * param_gain; /* param is the conductance of a resistor */
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*lnNoise = log(MAX(*noise, N_MINLOG));
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break;
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case N_GAIN:
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*noise = 0.0;
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break;
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}
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}
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/*
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PN 2003:
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The following function includes instance dtemp in
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thermal noise calculation.
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It will replace NevalSrc as soon as all devices
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will implement dtemp feature.
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*/
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void
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NevalSrcInstanceTemp(double* noise, double* lnNoise, CKTcircuit* ckt, int type,
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int node1, int node2, double param, double param2)
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{
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#ifdef RFSPICE
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// For this simulation we are not collecting any statistics on output nodes. Force noise to 0
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if (ckt->CKTcurrentAnalysis & DOING_SP)
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{
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double inoise = 0.0;
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switch (type) {
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case SHOTNOISE:
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inoise = 2 * CHARGE * fabs(param); /* param is the dc current in a semiconductor */
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// For this simulation we are not collecting any statistics on output nodes. Force noise to 0
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*noise = inoise;
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*lnNoise = log(MAX(*noise, N_MINLOG));
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break;
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case THERMNOISE:
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inoise = 4.0 * CONSTboltz * (ckt->CKTtemp + param2) * param; /* param is the conductance of a resistor */
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// For this simulation we are not collecting any statistics on output nodes. Force noise to 0
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*noise = inoise;
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*lnNoise = log(MAX(*noise, N_MINLOG));
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break;
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case N_GAIN:
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inoise = 0.0;
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*noise = cmodu(csubco(ckt->CKTadjointRHS->d[0][node1], ckt->CKTadjointRHS->d[0][node2]));
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return;
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}
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inoise = sqrt(inoise);
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// Calculate input equivalent noise current source (we have port impedance attached)
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for (int s = 0; s < ckt->CKTportCount; s++)
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vNoise->d[0][s] = cmultdo(csubco(ckt->CKTadjointRHS->d[s][node1], ckt->CKTadjointRHS->d[s][node2]), inoise);
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for (int d = 0; d < ckt->CKTportCount; d++)
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{
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cplx in;
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double yport = 1.0 / zref->d[d][d].re;
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in.re = vNoise->d[0][d].re * yport;
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in.im = vNoise->d[0][d].im * yport;
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for (int s = 0; s < ckt->CKTportCount; s++)
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caddc(&in, in, cmultco(ckt->CKTYmat->d[d][s], vNoise->d[0][s]));
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iNoise->d[0][d] = in;
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}
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for (int d = 0; d < ckt->CKTportCount; d++)
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for (int s = 0; s < ckt->CKTportCount; s++)
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ckt->CKTNoiseCYmat->d[d][s] = caddco(ckt->CKTNoiseCYmat->d[d][s], cmultco(iNoise->d[0][d], conju(iNoise->d[0][s])));
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return;
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}
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#endif
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double realVal;
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double imagVal;
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double gain;
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realVal = ckt->CKTrhs[node1] - ckt->CKTrhs[node2];
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imagVal = ckt->CKTirhs[node1] - ckt->CKTirhs[node2];
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gain = (realVal * realVal) + (imagVal * imagVal);
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switch (type) {
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case SHOTNOISE:
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*noise = gain * 2 * CHARGE * fabs(param); /* param is the dc current in a semiconductor */
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*lnNoise = log(MAX(*noise, N_MINLOG));
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break;
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case THERMNOISE:
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*noise = gain * 4 * CONSTboltz * (ckt->CKTtemp + param2) /* param2 is the instance temperature difference */
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* param; /* param is the conductance of a resistor */
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*lnNoise = log(MAX(*noise, N_MINLOG));
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break;
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case N_GAIN:
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*noise = gain;
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break;
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}
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}
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