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131 lines
7.1 KiB
131 lines
7.1 KiB
/**********
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Copyright 1990 Regents of the University of California. All rights reserved.
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Author: 1987 Thomas L. Quarles
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Modified: 2000 AlansFixes
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VDMOS Model: 2018 Holger Vogt
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**********/
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#include "ngspice/ngspice.h"
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#include "ngspice/devdefs.h"
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#include "ngspice/ifsim.h"
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#include "vdmosdefs.h"
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#include "ngspice/suffix.h"
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IFparm VDMOSpTable[] = { /* parameters */
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IOPU("m", VDMOS_M, IF_REAL, "Multiplier"),
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IOPU("l", VDMOS_L, IF_REAL, "Length"),
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IOPU("w", VDMOS_W, IF_REAL, "Width"),
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IP("off", VDMOS_OFF, IF_FLAG, "Device initially off"),
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IOPU("icvds", VDMOS_IC_VDS, IF_REAL, "Initial D-S voltage"),
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IOPU("icvgs", VDMOS_IC_VGS, IF_REAL, "Initial G-S voltage"),
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IOPU("icvbs", VDMOS_IC_VBS, IF_REAL, "Initial B-S voltage"),
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IOPU("temp", VDMOS_TEMP, IF_REAL, "Instance temperature"),
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IOPU("dtemp", VDMOS_DTEMP, IF_REAL, "Instance temperature difference"),
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IP( "ic", VDMOS_IC, IF_REALVEC, "Vector of D-S, G-S, B-S voltages"),
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OP( "id", VDMOS_CD, IF_REAL, "Drain current"),
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OP( "is", VDMOS_CS, IF_REAL, "Source current"),
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OP( "ig", VDMOS_CG, IF_REAL, "Gate current "),
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OP( "ib", VDMOS_CB, IF_REAL, "Bulk current "),
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OPU( "ibd", VDMOS_CBD, IF_REAL, "B-D junction current"),
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OPU( "ibs", VDMOS_CBS, IF_REAL, "B-S junction current"),
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OP( "vgs", VDMOS_VGS, IF_REAL, "Gate-Source voltage"),
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OP( "vds", VDMOS_VDS, IF_REAL, "Drain-Source voltage"),
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OP( "vbs", VDMOS_VBS, IF_REAL, "Bulk-Source voltage"),
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OPU( "vbd", VDMOS_VBD, IF_REAL, "Bulk-Drain voltage"),
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/*
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OP( "cgs", VDMOS_CGS, IF_REAL, "Gate-Source capacitance"),
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OP( "cgd", VDMOS_CGD, IF_REAL, "Gate-Drain capacitance"),
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*/
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OPU( "dnode", VDMOS_DNODE, IF_INTEGER, "Number of the drain node "),
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OPU( "gnode", VDMOS_GNODE, IF_INTEGER, "Number of the gate node "),
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OPU( "snode", VDMOS_SNODE, IF_INTEGER, "Number of the source node "),
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OPU( "bnode", VDMOS_BNODE, IF_INTEGER, "Number of the node "),
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OPU( "dnodeprime", VDMOS_DNODEPRIME, IF_INTEGER, "Number of int. drain node"),
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OPU( "snodeprime", VDMOS_SNODEPRIME, IF_INTEGER, "Number of int. source node "),
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OP( "von", VDMOS_VON, IF_REAL, " "),
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OP( "vdsat", VDMOS_VDSAT, IF_REAL, "Saturation drain voltage"),
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OPU( "sourcevcrit", VDMOS_SOURCEVCRIT, IF_REAL, "Critical source voltage"),
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OPU( "drainvcrit", VDMOS_DRAINVCRIT, IF_REAL, "Critical drain voltage"),
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OP( "rs", VDMOS_SOURCERESIST, IF_REAL, "Source resistance"),
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OPU("sourceconductance", VDMOS_SOURCECONDUCT, IF_REAL, "Conductance of source"),
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OP( "rd", VDMOS_DRAINRESIST, IF_REAL, "Drain conductance"),
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OPU("drainconductance", VDMOS_DRAINCONDUCT, IF_REAL, "Conductance of drain"),
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OP( "gm", VDMOS_GM, IF_REAL, "Transconductance"),
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OP( "gds", VDMOS_GDS, IF_REAL, "Drain-Source conductance"),
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OP( "gmb", VDMOS_GMBS, IF_REAL, "Bulk-Source transconductance"),
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OPR( "gmbs", VDMOS_GMBS, IF_REAL, ""),
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OPU( "gbd", VDMOS_GBD, IF_REAL, "Bulk-Drain conductance"),
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OPU( "gbs", VDMOS_GBS, IF_REAL, "Bulk-Source conductance"),
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OP( "cbd", VDMOS_CAPBD, IF_REAL, "Bulk-Drain capacitance"),
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OP( "cbs", VDMOS_CAPBS, IF_REAL, "Bulk-Source capacitance"),
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OP( "cgs", VDMOS_CAPGS, IF_REAL, "Gate-Source capacitance"),
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OP( "cgd", VDMOS_CAPGD, IF_REAL, "Gate-Drain capacitance"),
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OP( "cgb", VDMOS_CAPGB, IF_REAL, "Gate-Bulk capacitance"),
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OPU( "cqgs", VDMOS_CQGS, IF_REAL, "Capacitance due to gate-source charge storage"),
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OPU( "cqgd", VDMOS_CQGD, IF_REAL, "Capacitance due to gate-drain charge storage"),
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OPU( "cqgb", VDMOS_CQGB, IF_REAL, "Capacitance due to gate-bulk charge storage"),
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OPU( "cqbd", VDMOS_CQBD, IF_REAL, "Capacitance due to bulk-drain charge storage"),
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OPU( "cqbs", VDMOS_CQBS, IF_REAL, "Capacitance due to bulk-source charge storage"),
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OPU( "qgs", VDMOS_QGS, IF_REAL, "Gate-Source charge storage"),
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OPU( "qgd", VDMOS_QGD, IF_REAL, "Gate-Drain charge storage"),
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OPU( "qgb", VDMOS_QGB, IF_REAL, "Gate-Bulk charge storage"),
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OPU( "qbd", VDMOS_QBD, IF_REAL, "Bulk-Drain charge storage"),
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OPU( "qbs", VDMOS_QBS, IF_REAL, "Bulk-Source charge storage"),
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OPU( "p", VDMOS_POWER, IF_REAL, "Instaneous power"),
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};
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IFparm VDMOSmPTable[] = { /* model parameters */
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OP("type", VDMOS_MOD_TYPE, IF_STRING, "N-channel or P-channel MOS"),
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IOP("vto", VDMOS_MOD_VTO, IF_REAL, "Threshold voltage"),
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IOP("kp", VDMOS_MOD_KP, IF_REAL, "Transconductance parameter"),
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IOP("phi", VDMOS_MOD_PHI, IF_REAL, "Surface potential"),
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IOP("lambda",VDMOS_MOD_LAMBDA,IF_REAL, "Channel length modulation"),
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IOP("rd", VDMOS_MOD_RD, IF_REAL, "Drain ohmic resistance"),
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IOP("rs", VDMOS_MOD_RS, IF_REAL, "Source ohmic resistance"),
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IOP("rg", VDMOS_MOD_RG, IF_REAL, "Gate ohmic resistance"),
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/* body diode */
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IOP("n", VDMOS_MOD_N, IF_REAL, "Bulk diode emission coefficient"),
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IOP("tt", VDMOS_MOD_TT, IF_REAL, "Body diode transit time"),
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IOP("eg", VDMOS_MOD_EG, IF_REAL, "Body diode activation energy for temperature effect on Is"),
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IOP("Xti", VDMOS_MOD_XTI, IF_REAL, "Body diode saturation current temperature exponent"),
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IOP("is", VDMOS_MOD_IS, IF_REAL, "Body diode saturation current"),
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IOP("vj", VDMOS_MOD_VJ, IF_REAL, "Body diode junction potential"),
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/* body diode capacitance (e.g. source-drain capacitance) */
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IOP("fc", VDMOS_MOD_FC, IF_REAL, "Body diode coefficient for forward-bias depletion capacitance formula"),
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IOP("mj", VDMOS_MOD_MJ, IF_REAL, "Body diode grading coefficient"),
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/* gate-source and gate-drain capacitances */
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IOPA("cgdmin", VDMOS_MOD_CGDMIN, IF_REAL, "Minimum non-linear G-D capacitance"),
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IOPA("cgdmax", VDMOS_MOD_CGDMAX, IF_REAL, "Maximum non-linear G-D capacitance"),
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IOPA("a", VDMOS_MOD_A, IF_REAL, "Non-linear Cgd capacitance parameter"),
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IOPA("cgs", VDMOS_MOD_CGS, IF_REAL, "Gate-source capacitance"),
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IOP("tnom", VDMOS_MOD_TNOM, IF_REAL, "Parameter measurement temperature"),
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IOP("kf", VDMOS_MOD_KF, IF_REAL, "Flicker noise coefficient"),
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IOP("af", VDMOS_MOD_AF, IF_REAL, "Flicker noise exponent"),
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IP("vdmosn", VDMOS_MOD_NMOS, IF_FLAG, "N type DMOSfet model"),
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IP("vdmosp", VDMOS_MOD_PMOS, IF_FLAG, "P type DMOSfet model"),
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IP("vdmos", VDMOS_MOD_DMOS, IF_REAL, "DMOS transistor"),
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};
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char *VDMOSnames[] = {
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"Drain",
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"Gate",
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"Source",
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"Bulk"
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};
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int VDMOSnSize = NUMELEMS(VDMOSnames);
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int VDMOSpTSize = NUMELEMS(VDMOSpTable);
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int VDMOSmPTSize = NUMELEMS(VDMOSmPTable);
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int VDMOSiSize = sizeof(VDMOSinstance);
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int VDMOSmSize = sizeof(VDMOSmodel);
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