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26 lines
558 B
26 lines
558 B
Silicon Resistor
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* This simulation demonstrates the effects of velocity saturation at
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* high lateral electric fields.
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VPP 1 0 10v PWL 0s 0.0v 100s 10v
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VNN 2 0 0.0v
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D1 1 2 M_RES AREA=1
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.MODEL M_RES numd level=1
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+ options resistor defa=1p
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+ x.mesh loc=0.0 num=1
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+ x.mesh loc=1.0 num=101
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+ domain num=1 material=1
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+ material num=1 silicon
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+ doping unif n.type conc=2.5e16
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+ models bgn srh conctau auger concmob fieldmob
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+ method ac=direct
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*.OP
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.DC VPP 0.0v 10.01v 0.1v
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*.TRAN 1s 100.001s 0s 0.2s
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.PRINT DC I(VPP)
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.OPTION ACCT BYPASS=1 RELTOL=1e-12
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.END
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