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326 lines
14 KiB
326 lines
14 KiB
/**********
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Copyright 1990 Regents of the University of California. All rights reserved.
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Author: 1985 Thomas L. Quarles
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Modified: 2000 AlansFixes
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**********/
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#include "ngspice/ngspice.h"
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#include "ngspice/cktdefs.h"
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#include "mos1defs.h"
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#include "ngspice/const.h"
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#include "ngspice/sperror.h"
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#include "ngspice/suffix.h"
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int
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MOS1temp(GENmodel *inModel, CKTcircuit *ckt)
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{
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MOS1model *model = (MOS1model *)inModel;
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MOS1instance *here;
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double egfet,egfet1;
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double fact1,fact2;
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double kt,kt1;
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double arg1;
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double ratio,ratio4;
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double phio;
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double pbo;
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double gmanew,gmaold;
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double capfact;
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double pbfact1,pbfact;
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double vt,vtnom;
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double wkfngs;
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double wkfng;
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double fermig;
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double fermis;
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double vfb;
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/* loop through all the resistor models */
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for( ; model != NULL; model = model->MOS1nextModel) {
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/* perform model defaulting */
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if(!model->MOS1tnomGiven) {
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model->MOS1tnom = ckt->CKTnomTemp;
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}
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fact1 = model->MOS1tnom/REFTEMP;
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vtnom = model->MOS1tnom*CONSTKoverQ;
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kt1 = CONSTboltz * model->MOS1tnom;
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egfet1 = 1.16-(7.02e-4*model->MOS1tnom*model->MOS1tnom)/
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(model->MOS1tnom+1108);
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arg1 = -egfet1/(kt1+kt1)+1.1150877/(CONSTboltz*(REFTEMP+REFTEMP));
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pbfact1 = -2*vtnom *(1.5*log(fact1)+CHARGE*arg1);
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/* now model parameter preprocessing */
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if(!model->MOS1oxideThicknessGiven || model->MOS1oxideThickness == 0) {
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model->MOS1oxideCapFactor = 0;
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} else {
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model->MOS1oxideCapFactor = 3.9 * 8.854214871e-12/
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model->MOS1oxideThickness;
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if(!model->MOS1transconductanceGiven) {
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if(!model->MOS1surfaceMobilityGiven) {
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model->MOS1surfaceMobility=600;
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}
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model->MOS1transconductance = model->MOS1surfaceMobility *
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model->MOS1oxideCapFactor * 1e-4 /*(m**2/cm**2)*/;
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}
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if(model->MOS1substrateDopingGiven) {
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if(model->MOS1substrateDoping*1e6 /*(cm**3/m**3)*/ >1.45e16) {
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if(!model->MOS1phiGiven) {
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model->MOS1phi = 2*vtnom*
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log(model->MOS1substrateDoping*
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1e6/*(cm**3/m**3)*//1.45e16);
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model->MOS1phi = MAX(.1,model->MOS1phi);
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}
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fermis = model->MOS1type * .5 * model->MOS1phi;
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wkfng = 3.2;
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if(!model->MOS1gateTypeGiven) model->MOS1gateType=1;
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if(model->MOS1gateType != 0) {
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fermig = model->MOS1type *model->MOS1gateType*.5*egfet1;
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wkfng = 3.25 + .5 * egfet1 - fermig;
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}
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wkfngs = wkfng - (3.25 + .5 * egfet1 +fermis);
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if(!model->MOS1gammaGiven) {
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model->MOS1gamma = sqrt(2 * 11.70 * 8.854214871e-12 *
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CHARGE * model->MOS1substrateDoping*
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1e6/*(cm**3/m**3)*/)/
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model->MOS1oxideCapFactor;
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}
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if(!model->MOS1vt0Given) {
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if(!model->MOS1surfaceStateDensityGiven)
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model->MOS1surfaceStateDensity=0;
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vfb = wkfngs -
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model->MOS1surfaceStateDensity *
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1e4 /*(cm**2/m**2)*/ *
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CHARGE/model->MOS1oxideCapFactor;
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model->MOS1vt0 = vfb + model->MOS1type *
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(model->MOS1gamma * sqrt(model->MOS1phi)+
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model->MOS1phi);
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}
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} else {
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model->MOS1substrateDoping = 0;
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SPfrontEnd->IFerror (ERR_FATAL,
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"%s: Nsub < Ni",&model->MOS1modName);
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return(E_BADPARM);
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}
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}
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}
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/* loop through all instances of the model */
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for(here = model->MOS1instances; here!= NULL;
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here = here->MOS1nextInstance) {
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double czbd; /* zero voltage bulk-drain capacitance */
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double czbdsw; /* zero voltage bulk-drain sidewall capacitance */
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double czbs; /* zero voltage bulk-source capacitance */
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double czbssw; /* zero voltage bulk-source sidewall capacitance */
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double arg; /* 1 - fc */
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double sarg; /* (1-fc) ^^ (-mj) */
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double sargsw; /* (1-fc) ^^ (-mjsw) */
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/* perform the parameter defaulting */
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if(!here->MOS1dtempGiven) {
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here->MOS1dtemp = 0.0;
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}
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if(!here->MOS1tempGiven) {
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here->MOS1temp = ckt->CKTtemp + here->MOS1dtemp;
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}
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vt = here->MOS1temp * CONSTKoverQ;
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ratio = here->MOS1temp/model->MOS1tnom;
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fact2 = here->MOS1temp/REFTEMP;
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kt = here->MOS1temp * CONSTboltz;
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egfet = 1.16-(7.02e-4*here->MOS1temp*here->MOS1temp)/
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(here->MOS1temp+1108);
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arg = -egfet/(kt+kt)+1.1150877/(CONSTboltz*(REFTEMP+REFTEMP));
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pbfact = -2*vt *(1.5*log(fact2)+CHARGE*arg);
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if(!here->MOS1drainAreaGiven) {
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here->MOS1drainArea = ckt->CKTdefaultMosAD;
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}
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if(!here->MOS1mGiven) {
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here->MOS1m = ckt->CKTdefaultMosM;
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}
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if(!here->MOS1lGiven) {
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here->MOS1l = ckt->CKTdefaultMosL;
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}
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if(!here->MOS1sourceAreaGiven) {
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here->MOS1sourceArea = ckt->CKTdefaultMosAS;
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}
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if(!here->MOS1wGiven) {
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here->MOS1w = ckt->CKTdefaultMosW;
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}
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if(here->MOS1l - 2 * model->MOS1latDiff <=0) {
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SPfrontEnd->IFerror (ERR_WARNING,
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"%s: effective channel length less than zero",
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&(model->MOS1modName));
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}
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ratio4 = ratio * sqrt(ratio);
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here->MOS1tTransconductance = model->MOS1transconductance / ratio4;
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here->MOS1tSurfMob = model->MOS1surfaceMobility/ratio4;
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phio= (model->MOS1phi-pbfact1)/fact1;
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here->MOS1tPhi = fact2 * phio + pbfact;
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here->MOS1tVbi =
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model->MOS1vt0 - model->MOS1type *
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(model->MOS1gamma* sqrt(model->MOS1phi))
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+.5*(egfet1-egfet)
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+ model->MOS1type*.5* (here->MOS1tPhi-model->MOS1phi);
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here->MOS1tVto = here->MOS1tVbi + model->MOS1type *
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model->MOS1gamma * sqrt(here->MOS1tPhi);
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here->MOS1tSatCur = model->MOS1jctSatCur*
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exp(-egfet/vt+egfet1/vtnom);
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here->MOS1tSatCurDens = model->MOS1jctSatCurDensity *
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exp(-egfet/vt+egfet1/vtnom);
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pbo = (model->MOS1bulkJctPotential - pbfact1)/fact1;
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gmaold = (model->MOS1bulkJctPotential-pbo)/pbo;
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capfact = 1/(1+model->MOS1bulkJctBotGradingCoeff*
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(4e-4*(model->MOS1tnom-REFTEMP)-gmaold));
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here->MOS1tCbd = model->MOS1capBD * capfact;
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here->MOS1tCbs = model->MOS1capBS * capfact;
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here->MOS1tCj = model->MOS1bulkCapFactor * capfact;
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capfact = 1/(1+model->MOS1bulkJctSideGradingCoeff*
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(4e-4*(model->MOS1tnom-REFTEMP)-gmaold));
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here->MOS1tCjsw = model->MOS1sideWallCapFactor * capfact;
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here->MOS1tBulkPot = fact2 * pbo+pbfact;
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gmanew = (here->MOS1tBulkPot-pbo)/pbo;
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capfact = (1+model->MOS1bulkJctBotGradingCoeff*
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(4e-4*(here->MOS1temp-REFTEMP)-gmanew));
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here->MOS1tCbd *= capfact;
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here->MOS1tCbs *= capfact;
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here->MOS1tCj *= capfact;
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capfact = (1+model->MOS1bulkJctSideGradingCoeff*
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(4e-4*(here->MOS1temp-REFTEMP)-gmanew));
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here->MOS1tCjsw *= capfact;
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here->MOS1tDepCap = model->MOS1fwdCapDepCoeff * here->MOS1tBulkPot;
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if( (here->MOS1tSatCurDens == 0) ||
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(here->MOS1drainArea == 0) ||
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(here->MOS1sourceArea == 0) ) {
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here->MOS1sourceVcrit = here->MOS1drainVcrit =
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vt*log(vt/(CONSTroot2*here->MOS1m*here->MOS1tSatCur));
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} else {
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here->MOS1drainVcrit =
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vt * log( vt / (CONSTroot2 *
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here->MOS1m *
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here->MOS1tSatCurDens * here->MOS1drainArea));
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here->MOS1sourceVcrit =
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vt * log( vt / (CONSTroot2 *
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here->MOS1m *
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here->MOS1tSatCurDens * here->MOS1sourceArea));
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}
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if(model->MOS1capBDGiven) {
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czbd = here->MOS1tCbd * here->MOS1m;
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} else {
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if(model->MOS1bulkCapFactorGiven) {
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czbd=here->MOS1tCj*here->MOS1m*here->MOS1drainArea;
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} else {
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czbd=0;
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}
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}
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if(model->MOS1sideWallCapFactorGiven) {
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czbdsw= here->MOS1tCjsw * here->MOS1drainPerimiter *
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here->MOS1m;
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} else {
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czbdsw=0;
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}
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arg = 1-model->MOS1fwdCapDepCoeff;
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sarg = exp( (-model->MOS1bulkJctBotGradingCoeff) * log(arg) );
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sargsw = exp( (-model->MOS1bulkJctSideGradingCoeff) * log(arg) );
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here->MOS1Cbd = czbd;
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here->MOS1Cbdsw = czbdsw;
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here->MOS1f2d = czbd*(1-model->MOS1fwdCapDepCoeff*
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(1+model->MOS1bulkJctBotGradingCoeff))* sarg/arg
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+ czbdsw*(1-model->MOS1fwdCapDepCoeff*
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(1+model->MOS1bulkJctSideGradingCoeff))*
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sargsw/arg;
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here->MOS1f3d = czbd * model->MOS1bulkJctBotGradingCoeff * sarg/arg/
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here->MOS1tBulkPot
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+ czbdsw * model->MOS1bulkJctSideGradingCoeff * sargsw/arg /
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here->MOS1tBulkPot;
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here->MOS1f4d = czbd*here->MOS1tBulkPot*(1-arg*sarg)/
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(1-model->MOS1bulkJctBotGradingCoeff)
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+ czbdsw*here->MOS1tBulkPot*(1-arg*sargsw)/
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(1-model->MOS1bulkJctSideGradingCoeff)
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-here->MOS1f3d/2*
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(here->MOS1tDepCap*here->MOS1tDepCap)
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-here->MOS1tDepCap * here->MOS1f2d;
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if(model->MOS1capBSGiven) {
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czbs=here->MOS1tCbs * here->MOS1m;
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} else {
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if(model->MOS1bulkCapFactorGiven) {
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czbs=here->MOS1tCj*here->MOS1sourceArea * here->MOS1m;
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} else {
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czbs=0;
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}
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}
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if(model->MOS1sideWallCapFactorGiven) {
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czbssw = here->MOS1tCjsw * here->MOS1sourcePerimiter *
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here->MOS1m;
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} else {
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czbssw=0;
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}
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arg = 1-model->MOS1fwdCapDepCoeff;
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sarg = exp( (-model->MOS1bulkJctBotGradingCoeff) * log(arg) );
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sargsw = exp( (-model->MOS1bulkJctSideGradingCoeff) * log(arg) );
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here->MOS1Cbs = czbs;
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here->MOS1Cbssw = czbssw;
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here->MOS1f2s = czbs*(1-model->MOS1fwdCapDepCoeff*
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(1+model->MOS1bulkJctBotGradingCoeff))* sarg/arg
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+ czbssw*(1-model->MOS1fwdCapDepCoeff*
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(1+model->MOS1bulkJctSideGradingCoeff))*
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sargsw/arg;
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here->MOS1f3s = czbs * model->MOS1bulkJctBotGradingCoeff * sarg/arg/
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here->MOS1tBulkPot
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+ czbssw * model->MOS1bulkJctSideGradingCoeff * sargsw/arg /
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here->MOS1tBulkPot;
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here->MOS1f4s = czbs*here->MOS1tBulkPot*(1-arg*sarg)/
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(1-model->MOS1bulkJctBotGradingCoeff)
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+ czbssw*here->MOS1tBulkPot*(1-arg*sargsw)/
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(1-model->MOS1bulkJctSideGradingCoeff)
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-here->MOS1f3s/2*
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(here->MOS1tDepCap*here->MOS1tDepCap)
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-here->MOS1tDepCap * here->MOS1f2s;
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if(model->MOS1drainResistanceGiven) {
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if(model->MOS1drainResistance != 0) {
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here->MOS1drainConductance = here->MOS1m /
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model->MOS1drainResistance;
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} else {
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here->MOS1drainConductance = 0;
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}
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} else if (model->MOS1sheetResistanceGiven) {
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if(model->MOS1sheetResistance != 0) {
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here->MOS1drainConductance =
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here->MOS1m /
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(model->MOS1sheetResistance*here->MOS1drainSquares);
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} else {
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here->MOS1drainConductance = 0;
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}
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} else {
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here->MOS1drainConductance = 0;
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}
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if(model->MOS1sourceResistanceGiven) {
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if(model->MOS1sourceResistance != 0) {
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here->MOS1sourceConductance = here->MOS1m /
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model->MOS1sourceResistance;
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} else {
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here->MOS1sourceConductance = 0;
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}
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} else if (model->MOS1sheetResistanceGiven) {
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if ((model->MOS1sheetResistance != 0) &&
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(here->MOS1sourceSquares != 0)) {
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here->MOS1sourceConductance =
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here->MOS1m /
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(model->MOS1sheetResistance*here->MOS1sourceSquares);
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} else {
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here->MOS1sourceConductance = 0;
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}
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} else {
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here->MOS1sourceConductance = 0;
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}
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}
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}
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return(OK);
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}
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