2422 Commits (aae53f36419f28cb7eec4ed7003df6c5f3cd4835)

Author SHA1 Message Date
dwarning aae53f3641 complete vbic nqs effect implementation 2 years ago
dwarning 065b1c817c more complete vbic dc/tran nqs effect 2 years ago
dwarning 6e6e2fb203 first attempt to include NQS effect 2 years ago
Holger Vogt 1fef3835c9 Fix common typo: unkown -> unknown 2 years ago
dwarning 62677575fa vbic: init of thermal capacitances 2 years ago
dwarning 113275d3be vbic: save Vrth into state vector 2 years ago
dwarning 1b56bbe297 vbic: complete reactive part into acload 2 years ago
dwarning 8a88442004 vbic: more adding reactive part into acload 2 years ago
dwarning 32c4f24bfe vbic: first add reactive part into acload 2 years ago
dwarning c90da3ee38 vbic: add resistive part into acload 2 years ago
Holger Vogt 28d8301b5f Prevent crash upon buggy user input 2 years ago
Holger Vogt 442d8554f0 Enable single terminal n devices (Verilog-A modules) 2 years ago
Holger Vogt 727a920032 Authorship for HICUM 2 years ago
Holger Vogt fb6820de30 Send warning message to stderr, not to stdout. 2 years ago
dwarning 11a3711d86 revert commit ea4c438 and db85dead by removing VJ and M limiting 2 years ago
Holger Vogt f15a92d997 Revise commit 2 years ago
Holger Vogt e5195c10a3 Enable monotonic negative growth of abscissa values. 2 years ago
Holger Vogt 32901f9d0c Error messages to stderr only. 2 years ago
Holger Vogt 36e7835afd Remove Valgrind "potentially undefined" message. 2 years ago
Holger Vogt a5bf93d04d 'No OP' is the more important news, update note to the user. 2 years ago
dwarning 02a5cd5ea6 mos1...3: set channel thermal noise to 0 in subthreshold range for nlev=3 2 years ago
dwarning f44a0ede08 mos1...3: logical error-prevent garbage for nlev=3 2 years ago
dwarning ac5470568c diode: no need for vte recalculation, rhs not changed 2 years ago
dwarning 63a6234c92 diode: add saturation current temperature model tlev=2 2 years ago
Holger Vogt 97d9f38421 Add (enhanced) patch by Giles Atkinson 2 years ago
dwarning 6b80d21e36 diode: add alternative bangap calculation for tlev=2 2 years ago
dwarning 5fdd21f239 diode: add model parameter xw for mask and etching effect (level=3) 2 years ago
Holger Vogt 44d0991af0 Replace IOP by IOPR 2 years ago
Pat Deegan 52365c718a level 3 note on breakdown voltage params 2 years ago
Pat Deegan bcc769af0e Diode Model Parameters, Level 3, support for diode breakdown voltage synonyms, as used in sky130 PDK 2 years ago
Holger Vogt cf4684f9ae Stop ngspice in case of pwl errors, avoid crash. 2 years ago
Holger Vogt 1cdacad261 optran 0 0 0 0 0 uic may be used to load initial conditions 2 years ago
Giles Atkinson 8ad759bd66 Use the correct type of hash table for device and model names. 3 years ago
Giles Atkinson 673ae5c01d Change the code that makes variables from device/model parameters 3 years ago
dwarning 3684db0126 use limexp to prevent NaN with extreme exponents 2 years ago
dwarning 0fdd412324 format 2 years ago
Holger Vogt ee39b2600b Add a evaluation function which truly removes also the 2 years ago
dwarning 7e39c10bee introduce jfet gate-drain and gate-source junction emission coefficient 2 years ago
dwarning 2dab26212a introduce diode breakdown voltage parameter alias vb 2 years ago
dwarning 3201bcb09b prevent clang error 2 years ago
dwarning fd000c079b hicum2: use device temperature for noise analysis too 2 years ago
dwarning 3a18028283 vbic: use device temperature for noise analysis too 2 years ago
dwarning 305cd85c76 mos1...3: use device temperature for noise analysis too 2 years ago
dwarning a1dbd3f3c8 bjt, dio, jfet, res: use device temperature for noise analysis too 2 years ago
dwarning 20c82a5b1b format 2 years ago
dwarning e8f1cd4c92 too soon return - break is correct 2 years ago
dwarning 8d64381795 rm confusing comments and formatting 2 years ago
dwarning 9ed7a24a0e mos1...3: Beta in noise w/o channel length modulation 2 years ago
dwarning 6359b7b41f mos1...3: add nlev=3 mode channel thermal noise 2 years ago
dwarning c2f0b1468c mos3mask: change unusual structure name 2 years ago