Browse Source
Update the example structure for OSDI/OpenVAF:
Update the example structure for OSDI/OpenVAF:
all compiled models into lib/ngspice spinit updated to load the models via command 'osdi' local calls with 'pre_osdi' commanted out.pre-master-46
50 changed files with 148 additions and 399 deletions
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75examples/osdi/EKV2.6/Modelcards/ekv26_0u15.par
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157examples/osdi/EKV2.6/Modelcards/ekv26_0u5.par
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41examples/osdi/EKV2.6/ekv26_inverter.sp
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27examples/osdi/EKV2.6/netlist_mod_nmos.sp
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28examples/osdi/EKV2.6/netlist_mod_pmos.sp
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1examples/osdi/EKV2.6/osdi_libs/README
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2examples/osdi/bsimbulk/bsimbulk_inverter.sp
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2examples/osdi/bsimbulk/bsimbulk_ro.sp
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2examples/osdi/bsimbulk/c7552_ann_bsimbulk.net
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2examples/osdi/bsimbulk/netlist_mod_nmos.sp
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2examples/osdi/bsimbulk/netlist_mod_pmos.sp
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2examples/osdi/bsimbulk/nmos_pmos_BSIMBULK.sp
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1examples/osdi/bsimbulk/osdi_libs/README
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2examples/osdi/bsimcmg/inverter_ro.sp
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2examples/osdi/bsimcmg/inverter_transient.sp
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2examples/osdi/bsimcmg/netlist_nmos.sp
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2examples/osdi/bsimcmg/netlist_pmos.sp
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1examples/osdi/bsimcmg/osdi_libs/README
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18examples/osdi/bsimcmg/ringosc_17stg.sp
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2examples/osdi/bsimcmg/simple_inverter_dc.sp
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2examples/osdi/hicuml0/DFF_Y_ECL_HICUM.sp
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2examples/osdi/hicuml0/ECL-OR.cir
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2examples/osdi/hicuml0/ECL-RO-5.cir
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2examples/osdi/hicuml0/hic0_gum.sp
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2examples/osdi/hicuml0/hic0_out.sp
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1examples/osdi/hicuml0/osdi_libs/README
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2examples/osdi/mextram/mex_gum.sp
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2examples/osdi/mextram/mex_out.sp
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1examples/osdi/mextram/osdi_libs/README
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2examples/osdi/mixed-models/bb-psp_ro.sp
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2examples/osdi/mixed-models/bsimbulk_inverter.sp
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1examples/osdi/mixed-models/osdi_libs/README
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2examples/osdi/mixed-models/psp_inverter.sp
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1examples/osdi/osdi_libs/readme
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2examples/osdi/psp103/c7552_ann_psp.net
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22examples/osdi/psp103/nmos_pmos_PSP.sp
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1examples/osdi/psp103/osdi_libs/README
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2examples/osdi/psp103/psp_inverter.sp
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2examples/osdi/psp103/psp_out_nmos_nm.sp
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2examples/osdi/psp103/psp_out_pmos_nm.sp
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2examples/osdi/psp103/psp_ro.sp
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2examples/osdi/psp103/psp_transfer.sp
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1examples/osdi/r2_cmc/osdi_libs/README
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2examples/osdi/r2_cmc/res_r2_cmc.cir
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20src/spinit.in
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19visualc/spinit_all
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19visualc/spinitd
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19visualc/spinitd64
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18visualc/spinitr
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19visualc/spinitr64
@ -1,75 +0,0 @@ |
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*** SPICE Models |
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*** Models created by Daniel Foty. |
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*** (c) 2001, Gilgamesh Associates and EPFL – All rights reserved. |
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*** These models are provided without warranty or support. |
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*** These models represent a completely fictitious 0.15um process, and do |
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*** NOT correspond to any real silicon process. They are provided expressly for |
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*** use in the examples provided in this text, and should not be used for any |
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*** real silicon product design. |
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*** NMOS EKV MOSFET Model *************************************************** |
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*** Level=44 in WinSPICE and ELDO, Level=55 in ADM/HSPICE, Level=5 in PSPICE, |
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*** Level=EKV in Spectre |
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*** Lmin=0.15u Wmin=1.05u (If Scale=0.15u then Lmin=1 and Wmin=7) |
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*————— |
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.MODEL nmos nmos |
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+ LEVEL=44 |
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*** Setup Parameters |
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+ UPDATE=2.6 |
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*** Process Related Model Parameters |
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+ COX=9.083E-3 XJ=0.15E-6 |
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*** Intrinsic Model Parameters |
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+ VTO=0.4 GAMMA=0.71 PHI=0.97 KP=453E-6 |
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+ E0=88.0E6 UCRIT=4.0E6 |
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+ DL=-0.05E-6 DW=-0.02E-6 |
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+ LAMBDA = 0.30 LETA=0.28 WETA=0 |
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+ Q0=280E-6 LK=0.5E-6 |
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*** Substrate Current Parameters |
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+ IBN=1.0 IBA=200E6 IBB=350E6 |
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*** Intrinsic Model Temperature Parameters |
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+ TNOM=27.0 TCV=1.5E-3 BEX=-1.5 UCEX=1.7 IBBT=0 |
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*** 1/f Noise Model Parameters |
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+ KF=1E-27 AF=1 |
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*** Series Resistance and Area Calculation Parameters |
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+ HDIF=0.24e-6 ACM=3 RSH=5.0 RS=1250.526 |
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+ RD=1250.526 LDIF=0.07e-6 |
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*** Junction Current Parameters |
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+ JS=1.0E-6 JSW=5.0E-11 XTI=0 N=1.5 |
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*** Junction Capacitances Parameters |
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+ CJ=1.0E-3 CJSW=2.0E-10 CJGATE=5.0E-10 |
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+ MJ=0.5 MJSW=0.3 PB=0.9 PBSW=0.9 FC=0.5 |
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*** Gate Overlap Capacitances |
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+ CGSO=3.0E-10 CGDO=3.0E-10 CGBO=3.0E-11 |
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|
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*** PMOS EKV MOSFET Model *************************************************** |
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*** Level=44 in WinSPICE and ELDO, Level=55 in ADM/HSPICE, Level=5 in PSPICE, |
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*** Level=EKV in Spectre |
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*** Lmin=0.15u Wmin=1.05u (If Scale=0.15u then Lmin=1 and Wmin=7) |
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*————— |
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.MODEL pmos pmos |
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+ LEVEL = 44 |
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*** Setup Parameters |
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+ UPDATE = 2.6 |
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*** Process Related Model Parameters |
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+ COX=9.083E-3 XJ=0.15E-6 |
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*** Intrinsic Model Parameters |
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+ VTO=-0.4 GAMMA=0.69 PHI=0.87 KP=92.15E-6 |
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+ E0=51.0E6 UCRIT=18.0E6 |
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+ DL=-0.05E-6 DW=-0.03E-6 |
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+ LAMBDA=1.1 LETA=0.45 WETA=0 |
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+ Q0=200E-6 LK=0.6E-6 |
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*** Substrate Current Parameters |
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+ IBN=1.0 IBA=0.0 IBB=300E6 |
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*** Intrinsic Model Temperature Parameters |
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+ TNOM=25.0 TCV=-1.4E-3 BEX=-1.4 UCEX=2.0 IBBT=0.0 |
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*** 1/f Noise Model Parameters |
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+ KF=1.0E-28 AF=1 |
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*** Series Resistance and Area Calculation Parameters |
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+ HDIF=0.24E-6 ACM=3 RSH=5.0 RS=3145.263 |
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+ RD=3145.263 LDIF=0.07e-6 |
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*** Junction Current Parameters |
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+ JS=1.0E-7 JSW=5.0E-12 XTI=0 N=1.8 |
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*** Junction Capacitances Parameters |
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+ CJ=1.3E-3 CJSW=2.5E-10 CJGATE=5.5E-10 |
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+ MJ=0.5 MJSW=0.35 PB=0.9 PBSW=0.9 FC=0.5 |
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*** Gate Overlap Capacitances |
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+ CGSO=3.2E-10 CGDO=3.2E-10 CGBO=3.0E-11 |
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@ -1,157 +0,0 @@ |
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********************************************************************** |
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* EKV v2.6 parameters for 0.5um CMOS C. EPFL-LEG, 1999 |
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* ---------------------------------- |
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* |
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* ELDO (LEVEL = 44) / PSPICE (LEVEL = 5) example parameter set |
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* for the EKV v2.6 model is provided for NMOS and PMOS. |
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* |
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* |
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* IMPORTANT NOTES: |
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* ---------------- |
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* |
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* Parameters do not correspond to a particular technology but |
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* have reasonable values for standard 0.5um CMOS. |
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* Not intended for use in real design. |
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* |
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* Includes all intrinsic model parameters. An example set for |
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* extrinsic model parameters is provided. |
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* |
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* Geometry range: W >= 0.8um, L >= 0.5um |
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* Voltage range: |Vgb| < 3.3V, |Vdb| < 3.3V, |Vsb| < 2V |
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* |
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* For use with either simulator, comment/uncomment respective lines. |
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* Use of extrinsic model parameters and models (series resistance, |
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* junction currents/capacitances) is in general simulator-dependent. |
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* |
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********************************************************************** |
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|
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* EKV v2.6 NMOS |
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*--------------- |
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.MODEL NCH EKV_VA |
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*+ LEVEL = 44 |
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*** Setup Parameters |
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*+ UPDATE = 2.6 |
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*+ XQC = 0.4 |
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+ TYPE = 1 |
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*** Process Related Model Parameters |
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+ COX = 3.45E-3 |
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+ XJ = 0.15E-6 |
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*** Intrinsic Model Parameters |
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+ VTO = 0.6 |
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+ GAMMA = 0.71 |
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+ PHI = 0.97 |
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+ KP = 150E-6 |
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+ E0 = 88.0E6 |
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+ UCRIT = 4.5E6 |
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+ DL = -0.05E-6 |
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+ DW = -0.02E-6 |
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+ LAMBDA = 0.23 |
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+ LETA = 0.28 |
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+ WETA = 0.05 |
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+ Q0 = 280E-6 |
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+ LK = 0.5E-6 |
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*** Substrate Current Parameters |
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+ IBN = 1.0 |
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+ IBA = 200E6 |
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+ IBB = 350E6 |
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*** Intrinsic Model Temperature Parameters |
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+ TNOM = 25.0 |
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+ TCV = 1.5E-3 |
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+ BEX = -1.5 |
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+ UCEX = 1.7 |
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+ IBBT = 0.0 |
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*** 1/f Noise Model Parameters |
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+ KF = 1E-27 |
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+ AF = 1 |
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*** Short-Distance Matching Statistical Parameters (for MC simulation only) |
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*+ AVTO = 0 DEV = 10.0E-3 ; ELDO v4.6 |
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*+ AGAMMA = 0 DEV = 10.0E-3 ; ELDO v4.6 |
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*+ AKP = 0 DEV = 25.0E-3 ; ELDO v4.6 |
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*** Series Resistance and Area Calulation Parameters |
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*+ RLEV = 3 |
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+ HDIF = 0.9E-6 |
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+ RSH = 510 |
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*** Junction Current Parameters |
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*+ ALEV = 3 |
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+ JS = 8.0E-6 |
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+ JSW = 1.5E-10 |
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+ XTI = 0 |
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+ N = 1.5 |
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*** Junction Capacitances Parameters |
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+ CJ = 8.0E-4 |
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+ CJSW = 3.0E-10 |
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+ MJ = 0.5 |
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+ MJSW = 0.3 |
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+ PB = 0.9 |
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+ PBSW = 0.5 |
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+ FC = 0.5 |
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*** Gate Overlap Capacitances |
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+ CGSO = 1.5E-10 |
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+ CGDO = 1.5E-10 |
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+ CGBO = 4.0E-10 |
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|
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|
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* EKV v2.6 PMOS |
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*--------------- |
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.MODEL PCH EKV_VA |
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*+ LEVEL = 44 |
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*** Setup Parameters |
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*+ UPDATE = 2.6 |
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*+ XQC = 0.4 |
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+ TYPE = -1 |
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*** Process Related Model Parameters |
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+ COX = 3.45E-3 |
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+ XJ = 0.15E-6 |
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*** Intrinsic Model Parameters |
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+ VTO = -0.55 |
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+ GAMMA = 0.69 |
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+ PHI = 0.87 |
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+ KP = 35.0E-6 |
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+ E0 = 51.0E6 |
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+ UCRIT = 18.0E6 |
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+ DL = -0.05E-6 |
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+ DW = -0.03E-6 |
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+ LAMBDA = 1.1 |
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+ LETA = 0.45 |
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+ WETA = 0.0 |
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+ Q0 = 200E-6 |
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+ LK = 0.6E-6 |
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*** Substrate Current Parameters |
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+ IBN = 1.0 |
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+ IBA = 10E6 |
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+ IBB = 300E6 |
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*** Intrinsic Model Temperature Parameters |
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+ TNOM = 25.0 |
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+ TCV = -1.4E-3 |
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+ BEX = -1.4 |
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+ UCEX = 2.0 |
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+ IBBT = 0.0 |
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*** 1/f Noise Model Parameters |
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+ KF = 1.0E-28 |
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+ AF = 1 |
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*** Short-Distance Matching Statistical Parameters (for MC simulation only) |
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*+ AVTO = 0 DEV = 10.0E-3 ; ELDO v4.6 |
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*+ AGAMMA = 0 DEV = 10.0E-3 ; ELDO v4.6 |
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*+ AKP = 0 DEV = 25.0E-3 ; ELDO v4.6 |
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*** Series Resistance and Area Calulation Parameters |
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*+ RLEV = 3 |
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+ HDIF = 0.9E-6 |
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+ RSH = 990 |
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*** Junction Current Parameters |
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*+ ALEV = 3 |
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+ JS = 4.0E-5 |
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+ JSW = 7.0E-10 |
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+ XTI = 0 |
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+ N = 1.8 |
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*** Junction Capacitances Parameters |
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+ CJ = 8.0E-4 |
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+ CJSW = 4.0E-10 |
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+ MJ = 0.5 |
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+ MJSW = 0.35 |
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+ PB = 0.9 |
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+ PBSW = 0.8 |
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+ FC = 0.5 |
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*** Gate Overlap Capacitances |
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+ CGSO = 1.5E-10 |
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+ CGDO = 1.5E-10 |
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+ CGBO = 4.0E-10 |
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@ -1,41 +0,0 @@ |
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* EKV 2.6 |
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* simple inverter |
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|
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.param Vcc = 1.8 |
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|
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* model definitions: |
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*.model .MODEL PCH EKV_VA type=-1 |
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*.model .MODEL NCH EKV_VA type=1 |
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.include Modelcards/ekv26_0u5.par |
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|
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* the voltage sources: |
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Vdd vdd gnd DC 'Vcc' |
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V1 in gnd pulse(0 'Vcc' 0p 200p 100p 1n 2n) |
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Vmeas vss 0 0 |
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|
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Xnot1 in vdd vss out not1 |
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*Rout out 0 1k |
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|
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.subckt not1 a vdd vss z |
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Np1 z a vdd vdd pch W=2u L=0.5u as=0.26235p ad=0.26235p ps=2.51u pd=2.51u |
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Nn1 z a vss vss nch W=1u L=0.5u as=0.131175p ad=0.131175p ps=1.52u pd=1.52u |
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c3 a vss 0.384f |
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c2 z vss 0.576f |
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.ends |
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|
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* simulation command: |
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.tran 10ps 10ns |
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.dc V1 0 'vcc' 'vcc/100' |
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|
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.control |
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pre_osdi osdi_libs/ekv26_mod.osdi |
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run |
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*set nolegend |
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set xbrushwidth=3 |
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plot in out |
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plot dc1.out |
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plot dc1.i(Vmeas) |
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rusage |
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.endc |
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|
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.end |
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@ -1,27 +0,0 @@ |
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OSDI EKV 2.6 NMOS Test |
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*.options abstol=1e-15 |
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|
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* one voltage source per MOS terminal: |
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VD dd 0 1 |
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VG gg 0 1 |
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VS ss 0 0 |
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VB bb 0 0 |
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|
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* model definitions: |
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*.model .MODEL NCH EKV_VA type=1 |
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.include Modelcards/ekv26_0u5.par |
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|
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*OSDI EKV: |
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N1 dd gg ss bb nch W=5e-6 L=0.5e-6 |
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|
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.control |
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pre_osdi osdi_libs/ekv26_mod.osdi |
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set xbrushwidth=3 |
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* a DC sweep: drain, gate |
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dc Vd 0 1.6 0.01 VG 0 1.6 0.2 |
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* plot source current |
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plot i(VS) |
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|
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.endc |
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|
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.end |
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@ -1,28 +0,0 @@ |
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OSDI EKV 2.6 PMOS Test |
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*.options abstol=1e-15 |
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|
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* one voltage source per MOS terminal: |
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VD dd 0 -1 |
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VG gg 0 -1 |
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VS ss 0 0 |
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VB bb 0 0 |
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|
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* model definitions: |
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*.model .MODEL PCH EKV_VA type=-1 |
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.include Modelcards/ekv26_0u5.par |
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|
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*OSDI EKV: |
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N1 dd gg ss bb pch W=5e-6 L=5e-7 |
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|
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.control |
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pre_osdi osdi_libs/ekv26_mod.osdi |
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set xbrushwidth=3 |
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* a DC sweep: drain, gate |
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*op |
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dc Vd 0 -1.8 -0.01 VG 0 -1.8 -0.2 |
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* plot source current |
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plot i(VS) |
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|
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.endc |
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|
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.end |
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@ -1 +0,0 @@ |
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Place ekv26_mod.osdi here. |
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@ -1 +0,0 @@ |
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Place bsimbulk107.osdi here. |
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@ -1 +0,0 @@ |
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Place bsimcmg.osdi here. |
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@ -1 +0,0 @@ |
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Place HICUML0-2.osdi here. |
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@ -1 +0,0 @@ |
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Place bjt505.osdi here. |
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@ -1 +0,0 @@ |
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Place bsimbulk107.osdi and psp103.osdi here. |
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@ -0,0 +1 @@ |
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Put your compiled models *.osdi here, if used locally. |
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@ -1 +0,0 @@ |
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Place psp103.osdi and juncap200.osdi here. |
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@ -1 +0,0 @@ |
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Place r2_cmc.osdi here. |
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