stefanjones
24 years ago
2 changed files with 0 additions and 462 deletions
@ -1,66 +0,0 @@ |
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/* |
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* project.h |
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* |
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* Diagonalization by Successive Rotations Method |
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* (The Jacobi Method) |
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* |
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* Date: October 4, 1991 |
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* |
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* Author: Shen Lin |
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* |
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* Copyright (C) University of California, Berkeley |
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* |
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*/ |
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|
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/************************************************************ |
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* |
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* Macros |
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* |
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************************************************************/ |
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|
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#ifndef MAX |
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#define MAX(x, y) ((x) > (y) ? (x) : (y)) |
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#endif |
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#ifndef MIN |
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#define MIN(x, y) ((x) < (y) ? (x) : (y)) |
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#endif |
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#ifndef ABS |
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#define ABS(x) ((x) >= 0 ? (x) : (-(x))) |
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#endif |
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#ifndef SGN |
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#define SGN(x) ((x) >= 0 ? (1.0) : (-1.0)) |
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#endif |
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/************************************************************ |
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* |
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* Defines |
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* |
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************************************************************/ |
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|
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#define MAX_DIM 16 |
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#define Title "Diagonalization of a Symmetric matrix A (A = S^-1 D S)\n" |
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#define Left_deg 7 /* should be greater than or equal to 6 */ |
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#define Right_deg 2 |
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/************************************************************ |
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* |
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* Data Structure Definitions |
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* |
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************************************************************/ |
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typedef struct linked_list_of_max_entry{ |
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struct linked_list_of_max_entry *next; |
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int row, col; |
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float value; |
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} MAXE, *MAXE_PTR; |
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typedef struct { |
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double *Poly[MAX_DIM]; |
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double C_0[MAX_DIM]; |
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} Mult_Out; |
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typedef struct { |
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double *Poly; |
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double C_0; |
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} Single_Out; |
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@ -1,396 +0,0 @@ |
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/* |
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* project.h |
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* |
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* Timing Simulator (ESWEC) |
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* |
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* Date: October 5, 1990 |
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* |
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* Author: Shen Lin |
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* |
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* Copyright (C) University of California, Berkeley |
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* |
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*/ |
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#ifndef _SWEC_H_ |
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#define _SWEC_H_ |
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|
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/************************************************************ |
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* |
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* Defines |
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* |
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************************************************************/ |
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|
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#define MainTitle " Timing Simulator\n" |
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#define MAXDEVICE 4 |
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#define MAXMOS 31500 /* suggested value */ |
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#define MAXDD 256 /* suggested value */ |
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#define MAXVCCS 128 /* suggested value */ |
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#define MAXTIME 1000000 |
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#define MAXNODE 136 |
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|
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#define TAB_SIZE 8192 /* originally 2048 */ |
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#define NUM_STEPS_PER_MICRON 10 /* 0.1 micron is the smallest step */ |
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#define MAX_FET_SIZE 80 /* largest fet in microns */ |
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#define Vol_Step 1.0e-3 /* voltage resolution */ |
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#define SCL 1000.0 /* voltage scaler (1V/3mv) */ |
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#define MAX_CP_TX_LINES 4 /* max number of coupled lines in |
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a multiconductor line system */ |
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|
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/************************************************************ |
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* |
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* Macro |
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* |
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************************************************************/ |
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#ifndef MAX |
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#define MAX(x, y) ((x) > (y) ? (x) : (y)) |
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#endif |
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#ifndef MIN |
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#define MIN(x, y) ((x) < (y) ? (x) : (y)) |
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#endif |
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#ifndef ABS |
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#define ABS(x) ((x) >= 0 ? (x) : (-(x))) |
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#endif |
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|
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/************************************************************ |
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* |
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* Data Structure Definitions |
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* |
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************************************************************/ |
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typedef struct reglist REGLIST; |
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typedef struct node NODE; |
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typedef struct mosfet MOSFET; |
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typedef struct emosfet EMOSFET; |
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typedef struct diode DIODE; |
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typedef struct ediode EDIODE; |
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typedef struct vccs VCCS; |
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typedef struct evccs EVCCS; |
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typedef struct i_cap I_CAP; |
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typedef struct ei_cap EI_CAP; |
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typedef struct resistor RESISTOR; |
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typedef struct eresistor ERESISTOR; |
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typedef struct rline RLINE; |
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typedef struct erline ERLINE; |
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typedef struct txline TXLine; |
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typedef struct etxline ETXLine; |
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typedef struct cpline CPLine; |
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typedef struct ecpline ECPLine; |
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typedef struct bqueue BQUEUE; |
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typedef struct pqueue PQUEUE; |
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typedef struct ms_device MS_DEVICE; |
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typedef struct bp_device BP_DEVICE; |
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typedef struct dd_device DD_DEVICE; |
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struct mosfet{ |
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int type; /* 1 : NMOS, 2 : PMOS */ |
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MS_DEVICE *device; /* NULL if the nominal device model */ |
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NODE *out_node; |
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NODE *in_node; |
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float Cs, Cd; |
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MOSFET *nx; |
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int time; /* instantaneous information */ |
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float voltage, dvg; /* instantaneous information */ |
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float vgN_1; /* gate voltage at previous event point */ |
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float G; /* effective conductance at t(n) */ |
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float effective; /* W over effective L */ |
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int tabW; /* width in ns/um */ |
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REGLIST *region; /* region associated with this mos */ |
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/* NULL if driven by the node of the same region */ |
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}; |
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struct diode{ |
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float Is; /* saturation current */ |
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float Vj; /* junction potential */ |
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double G; |
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NODE *in_node; |
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NODE *out_node; |
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DIODE *nx; |
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}; |
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struct vccs{ |
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float Is; /* saturation current */ |
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NODE *in_node; |
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NODE *out_node; |
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NODE *pcv_node; |
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NODE *ncv_node; |
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DIODE *nx; |
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}; |
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typedef struct { |
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char name[10]; /* device name */ |
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int type; /* 1 : NMOS, 2 : PMOS */ |
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int device_id; /* device id */ |
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} DEVICENAME; |
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struct ms_device{ |
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char name[10]; |
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int used; /* device used in circuit flag */ |
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float rho; /* device vsat denom param */ |
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float alpha; /* device vsat denom vgg param */ |
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float vt; /* device zero bias threshold voltage in mv*/ |
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float gamma; /* device backgate bias vt param */ |
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float fermi; /* device fermi potential in mv */ |
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float theta; /* device backgate bias vt width param */ |
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float mu; /* device vt width param */ |
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float eta; /* device saturation slope */ |
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float eta5; /* eta - 0.5 */ |
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int pzld; /* positive lambda */ |
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float lambda; /* channel-length modulation */ |
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float kp; /* device conductance parameter */ |
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float cgs0; /* gate-source overlap capacitance |
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per meter channel width */ |
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float cgd0; /* gate-drain overlap capacitance |
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per meter channel width */ |
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float cox; /* oxide-field capacitance |
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per square meter of gate area */ |
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float cjsw; /* zero-biased junction sidewall capacitace |
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per meter of junction perimeter */ |
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float cj0; /* zero-biased junction bottom capacitace |
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per square meter of junction area */ |
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float keq; /* abrupt junction parameter */ |
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float ld; /* lateral diffusion */ |
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float *thresh; |
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float *sat; |
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float *dsat; |
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float *body; |
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float *gammod; |
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}; |
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struct bp_device{ |
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char name[10]; |
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int type; /* 1 : NPN; 2 : PNP */ |
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float rc; /* collector resistance */ |
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float re; /* emitter resistance */ |
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float rb; /* zero bias base resistance */ |
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float Is; /* transport saturation current */ |
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float Af; /* ideal maximum forward alpha */ |
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float Ar; /* ideal maximum reverse alpha */ |
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float Vje; /* B-E built-in potential */ |
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float Vjc; /* B-C built-in potential */ |
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}; |
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struct dd_device{ |
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char name[10]; |
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float Is; /* saturation current */ |
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float rs; /* ohmic resistance */ |
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float Vj; /* junction potential */ |
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}; |
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typedef struct linked_lists_of_Bpoint{ |
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struct linked_lists_of_Bpoint *next; |
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int time; |
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float voltage; |
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float slope; |
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} BPOINT, *BPOINTPTR; |
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typedef struct linked_lists_of_nodeName{ |
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char id[24]; |
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struct linked_lists_of_nodeName *left, *right; |
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NODE *nd; |
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} NDname, *NDnamePt; |
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struct node { |
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NDnamePt name; |
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EMOSFET *mptr; /* pointer to head of src/drn MOSFET list */ |
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EMOSFET *gptr; /* pointer to head of gate MOSFET list */ |
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EI_CAP *cptr; /* pointer to head of internodal cap list */ |
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ERESISTOR *rptr; /* pointer to head of internodal resistor list */ |
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ERLINE *rlptr; /* pointer to head of internodal TX line list */ |
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ETXLine *tptr; /* pointer to head of transmission line list */ |
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ECPLine *cplptr; /* pointer to head of coupled lines list */ |
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EDIODE *ddptr; /* pointer to head of diode list */ |
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EVCCS *vccsptr; /* pointer to head of VCCS list */ |
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EVCCS *cvccsptr;/* pointer to head of controlled VCCS list */ |
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NODE *next; /* pointer to next node */ |
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REGLIST *region; /* region associated with this node */ |
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NODE *base_ptr; /* group src/drn nodes into region */ |
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/* charles 2,2 1/18/93 |
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float V; |
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float dv; voltage at t(n-1) and slope at t(n) |
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*/ |
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double V; |
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double dv; |
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float CL; /* grounded capacitance in F */ |
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double gsum; /*^ sum of the equivalent conductance */ |
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double cgsum; /*^ sum of the constant conductance */ |
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double is; /*^ equivalent Is */ |
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int tag; /* -2 : Vdd, -3 : Vss, -1 : initial value */ |
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int flag; /*^ flag to show some features of the node */ |
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PQUEUE *qptr; /*^ pointer to the entry in the queue or waiting list */ |
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FILE *ofile; /* output file for the signal at this node */ |
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/* NULL if not for print */ |
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int dvtag; |
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}; |
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struct reglist{ |
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REGLIST *rnxt; /* pointer to next region */ |
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NODE *nlist; /* node list */ |
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MOSFET *mos; |
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I_CAP *cap; |
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RESISTOR *res; |
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TXLine *txl; |
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CPLine *cpl; |
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struct linked_lists_of_Bpoint *Bpoint; /* break points at primary inputs */ |
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struct linked_lists_of_Bpoint *head; /* header of the break points at primary inputs */ |
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int eTime; /* time when this region previously evaluated */ |
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int DCvalue; |
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/* 1, 0, 2 : unknown, 3 : unchangeable 1, 4 : unchangeable 0 */ |
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BQUEUE *prediction; |
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}; |
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struct bqueue{ |
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int key; /* time for the event to be fired, or DC weight */ |
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BQUEUE *left; |
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BQUEUE *right; |
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BQUEUE *pred; |
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BQUEUE *pool; |
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REGLIST *region; /* region id */ |
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}; |
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struct pqueue { |
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NODE *node; |
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PQUEUE *next; |
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PQUEUE *prev; |
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}; |
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struct i_cap { |
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NODE *in_node; |
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NODE *out_node; |
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float cap; |
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I_CAP *nx; |
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}; |
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struct resistor { |
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NODE *in_node; |
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NODE *out_node; |
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float g; /* conductance */ |
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int ifF; /* whether floating */ |
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float g1; /* conductance for floating resistor */ |
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RESISTOR *nx; |
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}; |
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struct rline { |
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NODE *in_node; |
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NODE *out_node; |
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float g; /* conductance */ |
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RLINE *nx; |
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}; |
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typedef struct linked_lists_of_vi_txl{ |
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struct linked_lists_of_vi_txl *next; |
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struct linked_lists_of_vi_txl *pool; |
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int time; |
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/* charles 2,2 |
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float v_i, v_o; |
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float i_i, i_o; |
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*/ |
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double v_i, v_o; |
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double i_i, i_o; |
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} VI_list_txl; |
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typedef struct linked_lists_of_vi{ |
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struct linked_lists_of_vi *next; |
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struct linked_lists_of_vi *pool; |
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int time; |
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float v_i[MAX_CP_TX_LINES], v_o[MAX_CP_TX_LINES]; |
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float i_i[MAX_CP_TX_LINES], i_o[MAX_CP_TX_LINES]; |
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} VI_list; |
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typedef struct { |
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double c, x; |
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double cnv_i, cnv_o; |
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} TERM; |
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typedef struct { |
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int ifImg; |
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double aten; |
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TERM tm[3]; |
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} TMS; |
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struct cpline { |
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int noL; |
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int ext; |
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float ratio[MAX_CP_TX_LINES]; |
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float taul[MAX_CP_TX_LINES]; |
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TMS *h1t[MAX_CP_TX_LINES][MAX_CP_TX_LINES]; |
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TMS *h2t[MAX_CP_TX_LINES][MAX_CP_TX_LINES][MAX_CP_TX_LINES]; |
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TMS *h3t[MAX_CP_TX_LINES][MAX_CP_TX_LINES][MAX_CP_TX_LINES]; |
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double h1C[MAX_CP_TX_LINES][MAX_CP_TX_LINES]; |
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double h2C[MAX_CP_TX_LINES][MAX_CP_TX_LINES][MAX_CP_TX_LINES]; |
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double h3C[MAX_CP_TX_LINES][MAX_CP_TX_LINES][MAX_CP_TX_LINES]; |
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double h1e[MAX_CP_TX_LINES][MAX_CP_TX_LINES][3]; |
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NODE *in_node[MAX_CP_TX_LINES]; |
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NODE *out_node[MAX_CP_TX_LINES]; |
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int tag_i[MAX_CP_TX_LINES], tag_o[MAX_CP_TX_LINES]; |
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CPLine *nx; |
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struct linked_lists_of_vi *vi_head; |
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struct linked_lists_of_vi *vi_tail; |
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float dc1[MAX_CP_TX_LINES], dc2[MAX_CP_TX_LINES]; |
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}; |
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struct txline { |
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int lsl; /* 1 if the line is lossless, otherwise 0 */ |
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int ext; /* a flag, set if time step is greater than tau */ |
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float ratio; |
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float taul; |
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double sqtCdL; |
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double h2_aten; |
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double h3_aten; |
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double h1C; |
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double h1e[3]; |
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int ifImg; |
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NODE *in_node; |
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NODE *out_node; |
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int tag_i, tag_o; |
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TERM h1_term[3]; |
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TERM h2_term[3]; |
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TERM h3_term[6]; |
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TXLine *nx; |
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struct linked_lists_of_vi_txl *vi_head; |
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struct linked_lists_of_vi_txl *vi_tail; |
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float dc1, dc2; |
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int newtp; /* flag indicating new time point */ |
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}; |
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struct evccs { |
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VCCS *vccs; |
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EVCCS *link; |
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}; |
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struct ediode { |
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DIODE *dd; |
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EDIODE *link; |
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}; |
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struct emosfet { |
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MOSFET *mos; |
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EMOSFET *link; |
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}; |
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struct ei_cap { |
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I_CAP *cap; |
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EI_CAP *link; |
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}; |
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struct eresistor { |
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RESISTOR *res; |
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ERESISTOR *link; |
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}; |
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struct erline { |
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RLINE *rl; |
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ERLINE *link; |
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}; |
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struct etxline { |
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TXLine *line; |
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ETXLine *link; |
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}; |
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struct ecpline { |
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CPLine *line; |
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ECPLine *link; |
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}; |
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|
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#endif |
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