epilectrik
/
pyNgSpice
1
0
Fork 0
Code Issues Pull Requests Projects Releases Wiki Activity
Browse Source

execute vdmos-1.el

pre-master-46
rlar 8 years ago
parent
2072e142a7
commit
572bf10ebd
28 changed files with 7503 additions and 0 deletions
Whitespace
Show all changes Ignore whitespace when comparing lines Ignore changes in amount of whitespace Ignore changes in whitespace at EOL
Unified View
Diff Options
Show Stats Download Patch File Download Diff File
  1. 38
      src/spicelib/devices/vdmos/Makefile.am
  2. 165
      src/spicelib/devices/vdmos/vdmos.c
  3. 118
      src/spicelib/devices/vdmos/vdmosacld.c
  4. 437
      src/spicelib/devices/vdmos/vdmosask.c
  5. 99
      src/spicelib/devices/vdmos/vdmosconv.c
  6. 532
      src/spicelib/devices/vdmos/vdmosdefs.h
  7. 18
      src/spicelib/devices/vdmos/vdmosdel.c
  8. 1379
      src/spicelib/devices/vdmos/vdmosdist.c
  9. 578
      src/spicelib/devices/vdmos/vdmosdset.c
  10. 28
      src/spicelib/devices/vdmos/vdmosext.h
  11. 46
      src/spicelib/devices/vdmos/vdmosic.c
  12. 76
      src/spicelib/devices/vdmos/vdmosinit.c
  13. 13
      src/spicelib/devices/vdmos/vdmosinit.h
  14. 9
      src/spicelib/devices/vdmos/vdmositf.h
  15. 940
      src/spicelib/devices/vdmos/vdmosload.c
  16. 119
      src/spicelib/devices/vdmos/vdmosmask.c
  17. 154
      src/spicelib/devices/vdmos/vdmosmpar.c
  18. 190
      src/spicelib/devices/vdmos/vdmosnoi.c
  19. 123
      src/spicelib/devices/vdmos/vdmospar.c
  20. 132
      src/spicelib/devices/vdmos/vdmospzld.c
  21. 785
      src/spicelib/devices/vdmos/vdmossacl.c
  22. 238
      src/spicelib/devices/vdmos/vdmosset.c
  23. 623
      src/spicelib/devices/vdmos/vdmossld.c
  24. 68
      src/spicelib/devices/vdmos/vdmossprt.c
  25. 50
      src/spicelib/devices/vdmos/vdmossset.c
  26. 183
      src/spicelib/devices/vdmos/vdmossupd.c
  27. 332
      src/spicelib/devices/vdmos/vdmostemp.c
  28. 30
      src/spicelib/devices/vdmos/vdmostrun.c

38
src/spicelib/devices/vdmos/Makefile.am
View File

@ -0,0 +1,38 @@
## Process this file with automake to produce Makefile.in
noinst_LTLIBRARIES = libvdmos.la
libvdmos_la_SOURCES = \
vdmos.c \
vdmosacld.c \
vdmosask.c \
vdmosconv.c \
vdmosdefs.h \
vdmosdel.c \
vdmosdist.c \
vdmosdset.c \
vdmosext.h \
vdmosic.c \
vdmosinit.c \
vdmosinit.h \
vdmositf.h \
vdmosload.c \
vdmosmask.c \
vdmosmpar.c \
vdmosnoi.c \
vdmospar.c \
vdmospzld.c \
vdmossacl.c \
vdmosset.c \
vdmossld.c \
vdmossprt.c \
vdmossset.c \
vdmossupd.c \
vdmostemp.c \
vdmostrun.c
AM_CPPFLAGS = @AM_CPPFLAGS@ -I$(top_srcdir)/src/include
AM_CFLAGS = $(STATIC)
MAINTAINERCLEANFILES = Makefile.in

165
src/spicelib/devices/vdmos/vdmos.c
View File

@ -0,0 +1,165 @@
/**********
Copyright 1990 Regents of the University of California. All rights reserved.
Author: 1987 Thomas L. Quarles
Modified: 2000 AlansFixes
**********/
#include "ngspice/ngspice.h"
#include "ngspice/devdefs.h"
#include "ngspice/ifsim.h"
#include "vdmosdefs.h"
#include "ngspice/suffix.h"
IFparm VDMOSpTable[] = { /* parameters */
IOPU("m", VDMOS_M, IF_REAL , "Multiplier"),
IOPU("l", VDMOS_L, IF_REAL , "Length"),
IOPU("w", VDMOS_W, IF_REAL , "Width"),
IOPU("ad", VDMOS_AD, IF_REAL , "Drain area"),
IOPU("as", VDMOS_AS, IF_REAL , "Source area"),
IOPU("pd", VDMOS_PD, IF_REAL , "Drain perimeter"),
IOPU("ps", VDMOS_PS, IF_REAL , "Source perimeter"),
IOPU("nrd", VDMOS_NRD, IF_REAL , "Drain squares"),
IOPU("nrs", VDMOS_NRS, IF_REAL , "Source squares"),
IP("off", VDMOS_OFF, IF_FLAG , "Device initially off"),
IOPU("icvds", VDMOS_IC_VDS, IF_REAL , "Initial D-S voltage"),
IOPU("icvgs", VDMOS_IC_VGS, IF_REAL , "Initial G-S voltage"),
IOPU("icvbs", VDMOS_IC_VBS, IF_REAL , "Initial B-S voltage"),
IOPU("temp", VDMOS_TEMP, IF_REAL, "Instance temperature"),
IOPU("dtemp", VDMOS_DTEMP, IF_REAL, "Instance temperature difference"),
IP( "ic", VDMOS_IC, IF_REALVEC, "Vector of D-S, G-S, B-S voltages"),
IP( "sens_l", VDMOS_L_SENS, IF_FLAG, "flag to request sensitivity WRT length"),
IP( "sens_w", VDMOS_W_SENS, IF_FLAG, "flag to request sensitivity WRT width"),
OP( "id", VDMOS_CD, IF_REAL, "Drain current"),
OP( "is", VDMOS_CS, IF_REAL, "Source current"),
OP( "ig", VDMOS_CG, IF_REAL, "Gate current "),
OP( "ib", VDMOS_CB, IF_REAL, "Bulk current "),
OPU( "ibd", VDMOS_CBD, IF_REAL, "B-D junction current"),
OPU( "ibs", VDMOS_CBS, IF_REAL, "B-S junction current"),
OP( "vgs", VDMOS_VGS, IF_REAL, "Gate-Source voltage"),
OP( "vds", VDMOS_VDS, IF_REAL, "Drain-Source voltage"),
OP( "vbs", VDMOS_VBS, IF_REAL, "Bulk-Source voltage"),
OPU( "vbd", VDMOS_VBD, IF_REAL, "Bulk-Drain voltage"),
/*
OP( "cgs", VDMOS_CGS, IF_REAL , "Gate-Source capacitance"),
OP( "cgd", VDMOS_CGD, IF_REAL , "Gate-Drain capacitance"),
*/
OPU( "dnode", VDMOS_DNODE, IF_INTEGER, "Number of the drain node "),
OPU( "gnode", VDMOS_GNODE, IF_INTEGER, "Number of the gate node "),
OPU( "snode", VDMOS_SNODE, IF_INTEGER, "Number of the source node "),
OPU( "bnode", VDMOS_BNODE, IF_INTEGER, "Number of the node "),
OPU( "dnodeprime", VDMOS_DNODEPRIME, IF_INTEGER, "Number of int. drain node"),
OPU( "snodeprime", VDMOS_SNODEPRIME, IF_INTEGER, "Number of int. source node "),
OP( "von", VDMOS_VON, IF_REAL, " "),
OP( "vdsat", VDMOS_VDSAT, IF_REAL, "Saturation drain voltage"),
OPU( "sourcevcrit", VDMOS_SOURCEVCRIT,IF_REAL, "Critical source voltage"),
OPU( "drainvcrit", VDMOS_DRAINVCRIT, IF_REAL, "Critical drain voltage"),
OP( "rs", VDMOS_SOURCERESIST, IF_REAL, "Source resistance"),
OPU("sourceconductance", VDMOS_SOURCECONDUCT, IF_REAL, "Conductance of source"),
OP( "rd", VDMOS_DRAINRESIST, IF_REAL, "Drain conductance"),
OPU("drainconductance", VDMOS_DRAINCONDUCT, IF_REAL, "Conductance of drain"),
OP( "gm", VDMOS_GM, IF_REAL, "Transconductance"),
OP( "gds", VDMOS_GDS, IF_REAL, "Drain-Source conductance"),
OP( "gmb", VDMOS_GMBS, IF_REAL, "Bulk-Source transconductance"),
OPR( "gmbs", VDMOS_GMBS, IF_REAL, ""),
OPU( "gbd", VDMOS_GBD, IF_REAL, "Bulk-Drain conductance"),
OPU( "gbs", VDMOS_GBS, IF_REAL, "Bulk-Source conductance"),
OP( "cbd", VDMOS_CAPBD, IF_REAL, "Bulk-Drain capacitance"),
OP( "cbs", VDMOS_CAPBS, IF_REAL, "Bulk-Source capacitance"),
OP( "cgs", VDMOS_CAPGS, IF_REAL, "Gate-Source capacitance"),
OP( "cgd", VDMOS_CAPGD, IF_REAL, "Gate-Drain capacitance"),
OP( "cgb", VDMOS_CAPGB, IF_REAL, "Gate-Bulk capacitance"),
OPU( "cqgs",VDMOS_CQGS,IF_REAL,"Capacitance due to gate-source charge storage"),
OPU( "cqgd",VDMOS_CQGD,IF_REAL,"Capacitance due to gate-drain charge storage"),
OPU( "cqgb",VDMOS_CQGB,IF_REAL,"Capacitance due to gate-bulk charge storage"),
OPU( "cqbd",VDMOS_CQBD,IF_REAL,"Capacitance due to bulk-drain charge storage"),
OPU( "cqbs",VDMOS_CQBS,IF_REAL,"Capacitance due to bulk-source charge storage"),
OP( "cbd0", VDMOS_CAPZEROBIASBD, IF_REAL, "Zero-Bias B-D junction capacitance"),
OP( "cbdsw0", VDMOS_CAPZEROBIASBDSW, IF_REAL, " "),
OP( "cbs0", VDMOS_CAPZEROBIASBS, IF_REAL, "Zero-Bias B-S junction capacitance"),
OP( "cbssw0", VDMOS_CAPZEROBIASBSSW, IF_REAL, " "),
OPU( "qgs", VDMOS_QGS, IF_REAL, "Gate-Source charge storage"),
OPU( "qgd", VDMOS_QGD, IF_REAL, "Gate-Drain charge storage"),
OPU( "qgb", VDMOS_QGB, IF_REAL, "Gate-Bulk charge storage"),
OPU( "qbd", VDMOS_QBD, IF_REAL, "Bulk-Drain charge storage"),
OPU( "qbs", VDMOS_QBS, IF_REAL, "Bulk-Source charge storage"),
OPU( "p", VDMOS_POWER, IF_REAL, "Instaneous power"),
OPU( "sens_l_dc", VDMOS_L_SENS_DC, IF_REAL, "dc sensitivity wrt length"),
OPU( "sens_l_real", VDMOS_L_SENS_REAL,IF_REAL,
"real part of ac sensitivity wrt length"),
OPU( "sens_l_imag", VDMOS_L_SENS_IMAG,IF_REAL,
"imag part of ac sensitivity wrt length"),
OPU( "sens_l_mag", VDMOS_L_SENS_MAG, IF_REAL,
"sensitivity wrt l of ac magnitude"),
OPU( "sens_l_ph", VDMOS_L_SENS_PH, IF_REAL,
"sensitivity wrt l of ac phase"),
OPU( "sens_l_cplx", VDMOS_L_SENS_CPLX,IF_COMPLEX, "ac sensitivity wrt length"),
OPU( "sens_w_dc", VDMOS_W_SENS_DC, IF_REAL, "dc sensitivity wrt width"),
OPU( "sens_w_real", VDMOS_W_SENS_REAL,IF_REAL,
"real part of ac sensitivity wrt width"),
OPU( "sens_w_imag", VDMOS_W_SENS_IMAG,IF_REAL,
"imag part of ac sensitivity wrt width"),
OPU( "sens_w_mag", VDMOS_W_SENS_MAG, IF_REAL,
"sensitivity wrt w of ac magnitude"),
OPU( "sens_w_ph", VDMOS_W_SENS_PH, IF_REAL,
"sensitivity wrt w of ac phase"),
OPU( "sens_w_cplx", VDMOS_W_SENS_CPLX,IF_COMPLEX, "ac sensitivity wrt width")
};
IFparm VDMOSmPTable[] = { /* model parameters */
OP("type", VDMOS_MOD_TYPE, IF_STRING, "N-channel or P-channel MOS"),
IOP("vto", VDMOS_MOD_VTO, IF_REAL ,"Threshold voltage"),
IOPR("vt0", VDMOS_MOD_VTO, IF_REAL ,"Threshold voltage"),
IOP("kp", VDMOS_MOD_KP, IF_REAL ,"Transconductance parameter"),
IOP("gamma", VDMOS_MOD_GAMMA, IF_REAL ,"Bulk threshold parameter"),
IOP("phi", VDMOS_MOD_PHI, IF_REAL ,"Surface potential"),
IOP("lambda",VDMOS_MOD_LAMBDA,IF_REAL ,"Channel length modulation"),
IOP("rd", VDMOS_MOD_RD, IF_REAL ,"Drain ohmic resistance"),
IOP("rs", VDMOS_MOD_RS, IF_REAL ,"Source ohmic resistance"),
IOPA("cbd", VDMOS_MOD_CBD, IF_REAL ,"B-D junction capacitance"),
IOPA("cbs", VDMOS_MOD_CBS, IF_REAL ,"B-S junction capacitance"),
IOP("is", VDMOS_MOD_IS, IF_REAL ,"Bulk junction sat. current"),
IOP("pb", VDMOS_MOD_PB, IF_REAL ,"Bulk junction potential"),
IOPA("cgso", VDMOS_MOD_CGSO, IF_REAL ,"Gate-source overlap cap."),
IOPA("cgdo", VDMOS_MOD_CGDO, IF_REAL ,"Gate-drain overlap cap."),
IOPA("cgbo", VDMOS_MOD_CGBO, IF_REAL ,"Gate-bulk overlap cap."),
IOP("rsh", VDMOS_MOD_RSH, IF_REAL ,"Sheet resistance"),
IOPA("cj", VDMOS_MOD_CJ, IF_REAL ,"Bottom junction cap per area"),
IOP("mj", VDMOS_MOD_MJ, IF_REAL ,"Bottom grading coefficient"),
IOPA("cjsw", VDMOS_MOD_CJSW, IF_REAL ,"Side junction cap per area"),
IOP("mjsw", VDMOS_MOD_MJSW, IF_REAL ,"Side grading coefficient"),
IOP("js", VDMOS_MOD_JS, IF_REAL ,"Bulk jct. sat. current density"),
IOP("tox", VDMOS_MOD_TOX, IF_REAL ,"Oxide thickness"),
IOP("ld", VDMOS_MOD_LD, IF_REAL ,"Lateral diffusion"),
IOP("u0", VDMOS_MOD_U0, IF_REAL ,"Surface mobility"),
IOPR("uo", VDMOS_MOD_U0, IF_REAL ,"Surface mobility"),
IOP("fc", VDMOS_MOD_FC, IF_REAL ,"Forward bias jct. fit parm."),
IP("nmos", VDMOS_MOD_NMOS, IF_FLAG ,"N type MOSfet model"),
IP("pmos", VDMOS_MOD_PMOS, IF_FLAG ,"P type MOSfet model"),
IOP("nsub", VDMOS_MOD_NSUB, IF_REAL ,"Substrate doping"),
IOP("tpg", VDMOS_MOD_TPG, IF_INTEGER,"Gate type"),
IOP("nss", VDMOS_MOD_NSS, IF_REAL ,"Surface state density"),
IOP("tnom", VDMOS_MOD_TNOM, IF_REAL ,"Parameter measurement temperature"),
IOP("kf", VDMOS_MOD_KF, IF_REAL ,"Flicker noise coefficient"),
IOP("af", VDMOS_MOD_AF, IF_REAL ,"Flicker noise exponent")
};
char *VDMOSnames[] = {
"Drain",
"Gate",
"Source",
"Bulk"
};
int VDMOSnSize = NUMELEMS(VDMOSnames);
int VDMOSpTSize = NUMELEMS(VDMOSpTable);
int VDMOSmPTSize = NUMELEMS(VDMOSmPTable);
int VDMOSiSize = sizeof(VDMOSinstance);
int VDMOSmSize = sizeof(VDMOSmodel);

118
src/spicelib/devices/vdmos/vdmosacld.c
View File

@ -0,0 +1,118 @@
/**********
Copyright 1990 Regents of the University of California. All rights reserved.
Author: 1985 Thomas L. Quarles
Modified: 2000 AlansFixes
**********/
/*
*/
#include "ngspice/ngspice.h"
#include "ngspice/cktdefs.h"
#include "vdmosdefs.h"
#include "ngspice/sperror.h"
#include "ngspice/suffix.h"
int
VDMOSacLoad(GENmodel *inModel, CKTcircuit *ckt)
{
VDMOSmodel *model = (VDMOSmodel*)inModel;
VDMOSinstance *here;
int xnrm;
int xrev;
double xgs;
double xgd;
double xgb;
double xbd;
double xbs;
double capgs;
double capgd;
double capgb;
double GateBulkOverlapCap;
double GateDrainOverlapCap;
double GateSourceOverlapCap;
double EffectiveLength;
for( ; model != NULL; model = VDMOSnextModel(model)) {
for(here = VDMOSinstances(model); here!= NULL;
here = VDMOSnextInstance(here)) {
if (here->VDMOSmode < 0) {
xnrm=0;
xrev=1;
} else {
xnrm=1;
xrev=0;
}
/*
* meyer's model parameters
*/
EffectiveLength=here->VDMOSl - 2*model->VDMOSlatDiff;
GateSourceOverlapCap = model->VDMOSgateSourceOverlapCapFactor *
here->VDMOSm * here->VDMOSw;
GateDrainOverlapCap = model->VDMOSgateDrainOverlapCapFactor *
here->VDMOSm * here->VDMOSw;
GateBulkOverlapCap = model->VDMOSgateBulkOverlapCapFactor *
here->VDMOSm * EffectiveLength;
capgs = ( *(ckt->CKTstate0+here->VDMOScapgs)+
*(ckt->CKTstate0+here->VDMOScapgs) +
GateSourceOverlapCap );
capgd = ( *(ckt->CKTstate0+here->VDMOScapgd)+
*(ckt->CKTstate0+here->VDMOScapgd) +
GateDrainOverlapCap );
capgb = ( *(ckt->CKTstate0+here->VDMOScapgb)+
*(ckt->CKTstate0+here->VDMOScapgb) +
GateBulkOverlapCap );
xgs = capgs * ckt->CKTomega;
xgd = capgd * ckt->CKTomega;
xgb = capgb * ckt->CKTomega;
xbd = here->VDMOScapbd * ckt->CKTomega;
xbs = here->VDMOScapbs * ckt->CKTomega;
/*
* load matrix
*/
*(here->VDMOSGgPtr +1) += xgd+xgs+xgb;
*(here->VDMOSBbPtr +1) += xgb+xbd+xbs;
*(here->VDMOSDPdpPtr +1) += xgd+xbd;
*(here->VDMOSSPspPtr +1) += xgs+xbs;
*(here->VDMOSGbPtr +1) -= xgb;
*(here->VDMOSGdpPtr +1) -= xgd;
*(here->VDMOSGspPtr +1) -= xgs;
*(here->VDMOSBgPtr +1) -= xgb;
*(here->VDMOSBdpPtr +1) -= xbd;
*(here->VDMOSBspPtr +1) -= xbs;
*(here->VDMOSDPgPtr +1) -= xgd;
*(here->VDMOSDPbPtr +1) -= xbd;
*(here->VDMOSSPgPtr +1) -= xgs;
*(here->VDMOSSPbPtr +1) -= xbs;
*(here->VDMOSDdPtr) += here->VDMOSdrainConductance;
*(here->VDMOSSsPtr) += here->VDMOSsourceConductance;
*(here->VDMOSBbPtr) += here->VDMOSgbd+here->VDMOSgbs;
*(here->VDMOSDPdpPtr) += here->VDMOSdrainConductance+
here->VDMOSgds+here->VDMOSgbd+
xrev*(here->VDMOSgm+here->VDMOSgmbs);
*(here->VDMOSSPspPtr) += here->VDMOSsourceConductance+
here->VDMOSgds+here->VDMOSgbs+
xnrm*(here->VDMOSgm+here->VDMOSgmbs);
*(here->VDMOSDdpPtr) -= here->VDMOSdrainConductance;
*(here->VDMOSSspPtr) -= here->VDMOSsourceConductance;
*(here->VDMOSBdpPtr) -= here->VDMOSgbd;
*(here->VDMOSBspPtr) -= here->VDMOSgbs;
*(here->VDMOSDPdPtr) -= here->VDMOSdrainConductance;
*(here->VDMOSDPgPtr) += (xnrm-xrev)*here->VDMOSgm;
*(here->VDMOSDPbPtr) += -here->VDMOSgbd+(xnrm-xrev)*here->VDMOSgmbs;
*(here->VDMOSDPspPtr) -= here->VDMOSgds+
xnrm*(here->VDMOSgm+here->VDMOSgmbs);
*(here->VDMOSSPgPtr) -= (xnrm-xrev)*here->VDMOSgm;
*(here->VDMOSSPsPtr) -= here->VDMOSsourceConductance;
*(here->VDMOSSPbPtr) -= here->VDMOSgbs+(xnrm-xrev)*here->VDMOSgmbs;
*(here->VDMOSSPdpPtr) -= here->VDMOSgds+
xrev*(here->VDMOSgm+here->VDMOSgmbs);
}
}
return(OK);
}

437
src/spicelib/devices/vdmos/vdmosask.c
View File

@ -0,0 +1,437 @@
/**********
Copyright 1990 Regents of the University of California. All rights reserved.
Author: 1987 Thomas L. Quarles
Modified: 2000 AlansFixes
**********/
#include "ngspice/ngspice.h"
#include "ngspice/const.h"
#include "ngspice/ifsim.h"
#include "ngspice/cktdefs.h"
#include "ngspice/devdefs.h"
#include "vdmosdefs.h"
#include "ngspice/sperror.h"
#include "ngspice/suffix.h"
/*ARGSUSED*/
int
VDMOSask(CKTcircuit *ckt, GENinstance *inst, int which, IFvalue *value,
IFvalue *select)
{
VDMOSinstance *here = (VDMOSinstance*)inst;
double vr;
double vi;
double sr;
double si;
double vm;
static char *msg = "Current and power not available for ac analysis";
switch(which) {
case VDMOS_TEMP:
value->rValue = here->VDMOStemp - CONSTCtoK;
return(OK);
case VDMOS_DTEMP:
value->rValue = here->VDMOSdtemp;
return(OK);
case VDMOS_CGS:
value->rValue = 2* *(ckt->CKTstate0 + here->VDMOScapgs);
return(OK);
case VDMOS_CGD:
value->rValue = 2* *(ckt->CKTstate0 + here->VDMOScapgd);
return(OK);
case VDMOS_M:
value->rValue = here->VDMOSm;
return(OK);
case VDMOS_L:
value->rValue = here->VDMOSl;
return(OK);
case VDMOS_W:
value->rValue = here->VDMOSw;
return(OK);
case VDMOS_AS:
value->rValue = here->VDMOSsourceArea;
return(OK);
case VDMOS_AD:
value->rValue = here->VDMOSdrainArea;
return(OK);
case VDMOS_PS:
value->rValue = here->VDMOSsourcePerimiter;
return(OK);
case VDMOS_PD:
value->rValue = here->VDMOSdrainPerimiter;
return(OK);
case VDMOS_NRS:
value->rValue = here->VDMOSsourceSquares;
return(OK);
case VDMOS_NRD:
value->rValue = here->VDMOSdrainSquares;
return(OK);
case VDMOS_OFF:
value->rValue = here->VDMOSoff;
return(OK);
case VDMOS_IC_VBS:
value->rValue = here->VDMOSicVBS;
return(OK);
case VDMOS_IC_VDS:
value->rValue = here->VDMOSicVDS;
return(OK);
case VDMOS_IC_VGS:
value->rValue = here->VDMOSicVGS;
return(OK);
case VDMOS_DNODE:
value->iValue = here->VDMOSdNode;
return(OK);
case VDMOS_GNODE:
value->iValue = here->VDMOSgNode;
return(OK);
case VDMOS_SNODE:
value->iValue = here->VDMOSsNode;
return(OK);
case VDMOS_BNODE:
value->iValue = here->VDMOSbNode;
return(OK);
case VDMOS_DNODEPRIME:
value->iValue = here->VDMOSdNodePrime;
return(OK);
case VDMOS_SNODEPRIME:
value->iValue = here->VDMOSsNodePrime;
return(OK);
case VDMOS_SOURCECONDUCT:
value->rValue = here->VDMOSsourceConductance;
return(OK);
case VDMOS_SOURCERESIST:
if (here->VDMOSsNodePrime != here->VDMOSsNode)
value->rValue = 1.0 / here->VDMOSsourceConductance;
else
value->rValue = 0.0;
return(OK);
case VDMOS_DRAINCONDUCT:
value->rValue = here->VDMOSdrainConductance;
return(OK);
case VDMOS_DRAINRESIST:
if (here->VDMOSdNodePrime != here->VDMOSdNode)
value->rValue = 1.0 / here->VDMOSdrainConductance;
else
value->rValue = 0.0;
return(OK);
case VDMOS_VON:
value->rValue = here->VDMOSvon;
return(OK);
case VDMOS_VDSAT:
value->rValue = here->VDMOSvdsat;
return(OK);
case VDMOS_SOURCEVCRIT:
value->rValue = here->VDMOSsourceVcrit;
return(OK);
case VDMOS_DRAINVCRIT:
value->rValue = here->VDMOSdrainVcrit;
return(OK);
case VDMOS_CD:
value->rValue = here->VDMOScd;
return(OK);
case VDMOS_CBS:
value->rValue = here->VDMOScbs;
return(OK);
case VDMOS_CBD:
value->rValue = here->VDMOScbd;
return(OK);
case VDMOS_GMBS:
value->rValue = here->VDMOSgmbs;
return(OK);
case VDMOS_GM:
value->rValue = here->VDMOSgm;
return(OK);
case VDMOS_GDS:
value->rValue = here->VDMOSgds;
return(OK);
case VDMOS_GBD:
value->rValue = here->VDMOSgbd;
return(OK);
case VDMOS_GBS:
value->rValue = here->VDMOSgbs;
return(OK);
case VDMOS_CAPBD:
value->rValue = here->VDMOScapbd;
return(OK);
case VDMOS_CAPBS:
value->rValue = here->VDMOScapbs;
return(OK);
case VDMOS_CAPZEROBIASBD:
value->rValue = here->VDMOSCbd;
return(OK);
case VDMOS_CAPZEROBIASBDSW:
value->rValue = here->VDMOSCbdsw;
return(OK);
case VDMOS_CAPZEROBIASBS:
value->rValue = here->VDMOSCbs;
return(OK);
case VDMOS_CAPZEROBIASBSSW:
value->rValue = here->VDMOSCbssw;
return(OK);
case VDMOS_VBD:
value->rValue = *(ckt->CKTstate0 + here->VDMOSvbd);
return(OK);
case VDMOS_VBS:
value->rValue = *(ckt->CKTstate0 + here->VDMOSvbs);
return(OK);
case VDMOS_VGS:
value->rValue = *(ckt->CKTstate0 + here->VDMOSvgs);
return(OK);
case VDMOS_VDS:
value->rValue = *(ckt->CKTstate0 + here->VDMOSvds);
return(OK);
case VDMOS_CAPGS:
value->rValue = 2* *(ckt->CKTstate0 + here->VDMOScapgs);
/* add overlap capacitance */
value->rValue += (VDMOSmodPtr(here)->VDMOSgateSourceOverlapCapFactor)
* here->VDMOSm
* (here->VDMOSw);
return(OK);
case VDMOS_QGS:
value->rValue = *(ckt->CKTstate0 + here->VDMOSqgs);
return(OK);
case VDMOS_CQGS:
value->rValue = *(ckt->CKTstate0 + here->VDMOScqgs);
return(OK);
case VDMOS_CAPGD:
value->rValue = 2* *(ckt->CKTstate0 + here->VDMOScapgd);
/* add overlap capacitance */
value->rValue += (VDMOSmodPtr(here)->VDMOSgateDrainOverlapCapFactor)
* here->VDMOSm
* (here->VDMOSw);
return(OK);
case VDMOS_QGD:
value->rValue = *(ckt->CKTstate0 + here->VDMOSqgd);
return(OK);
case VDMOS_CQGD:
value->rValue = *(ckt->CKTstate0 + here->VDMOScqgd);
return(OK);
case VDMOS_CAPGB:
value->rValue = 2* *(ckt->CKTstate0 + here->VDMOScapgb);
/* add overlap capacitance */
value->rValue += (VDMOSmodPtr(here)->VDMOSgateBulkOverlapCapFactor)
* here->VDMOSm
* (here->VDMOSl
-2*(VDMOSmodPtr(here)->VDMOSlatDiff));
return(OK);
case VDMOS_QGB:
value->rValue = *(ckt->CKTstate0 + here->VDMOSqgb);
return(OK);
case VDMOS_CQGB:
value->rValue = *(ckt->CKTstate0 + here->VDMOScqgb);
return(OK);
case VDMOS_QBD:
value->rValue = *(ckt->CKTstate0 + here->VDMOSqbd);
return(OK);
case VDMOS_CQBD:
value->rValue = *(ckt->CKTstate0 + here->VDMOScqbd);
return(OK);
case VDMOS_QBS:
value->rValue = *(ckt->CKTstate0 + here->VDMOSqbs);
return(OK);
case VDMOS_CQBS:
value->rValue = *(ckt->CKTstate0 + here->VDMOScqbs);
return(OK);
case VDMOS_L_SENS_DC:
if(ckt->CKTsenInfo && here->VDMOSsens_l){
value->rValue = *(ckt->CKTsenInfo->SEN_Sap[select->iValue + 1]+
here->VDMOSsenParmNo);
}
return(OK);
case VDMOS_L_SENS_REAL:
if(ckt->CKTsenInfo && here->VDMOSsens_l){
value->rValue = *(ckt->CKTsenInfo->SEN_RHS[select->iValue + 1]+
here->VDMOSsenParmNo);
}
return(OK);
case VDMOS_L_SENS_IMAG:
if(ckt->CKTsenInfo && here->VDMOSsens_l){
value->rValue = *(ckt->CKTsenInfo->SEN_iRHS[select->iValue + 1]+
here->VDMOSsenParmNo);
}
return(OK);
case VDMOS_L_SENS_MAG:
if(ckt->CKTsenInfo && here->VDMOSsens_l){
vr = *(ckt->CKTrhsOld + select->iValue + 1);
vi = *(ckt->CKTirhsOld + select->iValue + 1);
vm = sqrt(vr*vr + vi*vi);
if(vm == 0){
value->rValue = 0;
return(OK);
}
sr = *(ckt->CKTsenInfo->SEN_RHS[select->iValue + 1]+
here->VDMOSsenParmNo);
si = *(ckt->CKTsenInfo->SEN_iRHS[select->iValue + 1]+
here->VDMOSsenParmNo);
value->rValue = (vr * sr + vi * si)/vm;
}
return(OK);
case VDMOS_L_SENS_PH:
if(ckt->CKTsenInfo && here->VDMOSsens_l){
vr = *(ckt->CKTrhsOld + select->iValue + 1);
vi = *(ckt->CKTirhsOld + select->iValue + 1);
vm = vr*vr + vi*vi;
if(vm == 0){
value->rValue = 0;
return(OK);
}
sr = *(ckt->CKTsenInfo->SEN_RHS[select->iValue + 1]+
here->VDMOSsenParmNo);
si = *(ckt->CKTsenInfo->SEN_iRHS[select->iValue + 1]+
here->VDMOSsenParmNo);
value->rValue = (vr * si - vi * sr)/vm;
}
return(OK);
case VDMOS_L_SENS_CPLX:
if(ckt->CKTsenInfo && here->VDMOSsens_l){
value->cValue.real=
*(ckt->CKTsenInfo->SEN_RHS[select->iValue + 1]+
here->VDMOSsenParmNo);
value->cValue.imag=
*(ckt->CKTsenInfo->SEN_iRHS[select->iValue + 1]+
here->VDMOSsenParmNo);
}
return(OK);
case VDMOS_W_SENS_DC:
if(ckt->CKTsenInfo && here->VDMOSsens_w){
value->rValue = *(ckt->CKTsenInfo->SEN_Sap[select->iValue + 1]+
here->VDMOSsenParmNo + here->VDMOSsens_l);
}
return(OK);
case VDMOS_W_SENS_REAL:
if(ckt->CKTsenInfo && here->VDMOSsens_w){
value->rValue = *(ckt->CKTsenInfo->SEN_RHS[select->iValue + 1]+
here->VDMOSsenParmNo + here->VDMOSsens_l);
}
return(OK);
case VDMOS_W_SENS_IMAG:
if(ckt->CKTsenInfo && here->VDMOSsens_w){
value->rValue = *(ckt->CKTsenInfo->SEN_iRHS[select->iValue + 1]+
here->VDMOSsenParmNo + here->VDMOSsens_l);
}
return(OK);
case VDMOS_W_SENS_MAG:
if(ckt->CKTsenInfo && here->VDMOSsens_w){
vr = *(ckt->CKTrhsOld + select->iValue + 1);
vi = *(ckt->CKTirhsOld + select->iValue + 1);
vm = sqrt(vr*vr + vi*vi);
if(vm == 0){
value->rValue = 0;
return(OK);
}
sr = *(ckt->CKTsenInfo->SEN_RHS[select->iValue + 1]+
here->VDMOSsenParmNo + here->VDMOSsens_l);
si = *(ckt->CKTsenInfo->SEN_iRHS[select->iValue + 1]+
here->VDMOSsenParmNo + here->VDMOSsens_l);
value->rValue = (vr * sr + vi * si)/vm;
}
return(OK);
case VDMOS_W_SENS_PH:
if(ckt->CKTsenInfo && here->VDMOSsens_w){
vr = *(ckt->CKTrhsOld + select->iValue + 1);
vi = *(ckt->CKTirhsOld + select->iValue + 1);
vm = vr*vr + vi*vi;
if(vm == 0){
value->rValue = 0;
return(OK);
}
sr = *(ckt->CKTsenInfo->SEN_RHS[select->iValue + 1]+
here->VDMOSsenParmNo + here->VDMOSsens_l);
si = *(ckt->CKTsenInfo->SEN_iRHS[select->iValue + 1]+
here->VDMOSsenParmNo + here->VDMOSsens_l);
value->rValue = (vr * si - vi * sr)/vm;
}
return(OK);
case VDMOS_W_SENS_CPLX:
if(ckt->CKTsenInfo && here->VDMOSsens_w){
value->cValue.real=
*(ckt->CKTsenInfo->SEN_RHS[select->iValue + 1]+
here->VDMOSsenParmNo + here->VDMOSsens_l);
value->cValue.imag=
*(ckt->CKTsenInfo->SEN_iRHS[select->iValue + 1]+
here->VDMOSsenParmNo + here->VDMOSsens_l);
}
return(OK);
case VDMOS_CB :
if (ckt->CKTcurrentAnalysis & DOING_AC) {
errMsg = TMALLOC(char, strlen(msg) + 1);
errRtn = "VDMOSask.c";
strcpy(errMsg,msg);
return(E_ASKCURRENT);
} else {
value->rValue = here->VDMOScbd + here->VDMOScbs - *(ckt->CKTstate0
+ here->VDMOScqgb);
}
return(OK);
case VDMOS_CG :
if (ckt->CKTcurrentAnalysis & DOING_AC) {
errMsg = TMALLOC(char, strlen(msg) + 1);
errRtn = "VDMOSask.c";
strcpy(errMsg,msg);
return(E_ASKCURRENT);
} else if (ckt->CKTcurrentAnalysis & (DOING_DCOP | DOING_TRCV)) {
value->rValue = 0;
} else if ((ckt->CKTcurrentAnalysis & DOING_TRAN) &&
(ckt->CKTmode & MODETRANOP)) {
value->rValue = 0;
} else {
value->rValue = *(ckt->CKTstate0 + here->VDMOScqgb) +
*(ckt->CKTstate0 + here->VDMOScqgd) + *(ckt->CKTstate0 +
here->VDMOScqgs);
}
return(OK);
case VDMOS_CS :
if (ckt->CKTcurrentAnalysis & DOING_AC) {
errMsg = TMALLOC(char, strlen(msg) + 1);
errRtn = "VDMOSask.c";
strcpy(errMsg,msg);
return(E_ASKCURRENT);
} else {
value->rValue = -here->VDMOScd;
value->rValue -= here->VDMOScbd + here->VDMOScbs -
*(ckt->CKTstate0 + here->VDMOScqgb);
if ((ckt->CKTcurrentAnalysis & DOING_TRAN) &&
!(ckt->CKTmode & MODETRANOP)) {
value->rValue -= *(ckt->CKTstate0 + here->VDMOScqgb) +
*(ckt->CKTstate0 + here->VDMOScqgd) +
*(ckt->CKTstate0 + here->VDMOScqgs);
}
}
return(OK);
case VDMOS_POWER :
if (ckt->CKTcurrentAnalysis & DOING_AC) {
errMsg = TMALLOC(char, strlen(msg) + 1);
errRtn = "VDMOSask.c";
strcpy(errMsg,msg);
return(E_ASKPOWER);
} else {
double temp;
value->rValue = here->VDMOScd *
*(ckt->CKTrhsOld + here->VDMOSdNode);
value->rValue += (here->VDMOScbd + here->VDMOScbs -
*(ckt->CKTstate0 + here->VDMOScqgb)) *
*(ckt->CKTrhsOld + here->VDMOSbNode);
if ((ckt->CKTcurrentAnalysis & DOING_TRAN) &&
!(ckt->CKTmode & MODETRANOP)) {
value->rValue += (*(ckt->CKTstate0 + here->VDMOScqgb) +
*(ckt->CKTstate0 + here->VDMOScqgd) +
*(ckt->CKTstate0 + here->VDMOScqgs)) *
*(ckt->CKTrhsOld + here->VDMOSgNode);
}
temp = -here->VDMOScd;
temp -= here->VDMOScbd + here->VDMOScbs ;
if ((ckt->CKTcurrentAnalysis & DOING_TRAN) &&
!(ckt->CKTmode & MODETRANOP)) {
temp -= *(ckt->CKTstate0 + here->VDMOScqgb) +
*(ckt->CKTstate0 + here->VDMOScqgd) +
*(ckt->CKTstate0 + here->VDMOScqgs);
}
value->rValue += temp * *(ckt->CKTrhsOld + here->VDMOSsNode);
}
return(OK);
default:
return(E_BADPARM);
}
/* NOTREACHED */
}

99
src/spicelib/devices/vdmos/vdmosconv.c
View File

@ -0,0 +1,99 @@
/**********
Copyright 1990 Regents of the University of California. All rights reserved.
Author: 1985 Thomas L. Quarles
**********/
#include "ngspice/ngspice.h"
#include "ngspice/cktdefs.h"
#include "vdmosdefs.h"
#include "ngspice/sperror.h"
#include "ngspice/suffix.h"
int
VDMOSconvTest(GENmodel *inModel, CKTcircuit *ckt)
{
VDMOSmodel *model = (VDMOSmodel*)inModel;
VDMOSinstance *here;
double delvbs;
double delvbd;
double delvgs;
double delvds;
double delvgd;
double cbhat;
double cdhat;
double vbs;
double vbd;
double vgs;
double vds;
double vgd;
double vgdo;
double tol;
for( ; model != NULL; model = VDMOSnextModel(model)) {
for(here = VDMOSinstances(model); here!= NULL;
here = VDMOSnextInstance(here)) {
vbs = model->VDMOStype * (
*(ckt->CKTrhs+here->VDMOSbNode) -
*(ckt->CKTrhs+here->VDMOSsNodePrime));
vgs = model->VDMOStype * (
*(ckt->CKTrhs+here->VDMOSgNode) -
*(ckt->CKTrhs+here->VDMOSsNodePrime));
vds = model->VDMOStype * (
*(ckt->CKTrhs+here->VDMOSdNodePrime) -
*(ckt->CKTrhs+here->VDMOSsNodePrime));
vbd=vbs-vds;
vgd=vgs-vds;
vgdo = *(ckt->CKTstate0 + here->VDMOSvgs) -
*(ckt->CKTstate0 + here->VDMOSvds);
delvbs = vbs - *(ckt->CKTstate0 + here->VDMOSvbs);
delvbd = vbd - *(ckt->CKTstate0 + here->VDMOSvbd);
delvgs = vgs - *(ckt->CKTstate0 + here->VDMOSvgs);
delvds = vds - *(ckt->CKTstate0 + here->VDMOSvds);
delvgd = vgd-vgdo;
/* these are needed for convergence testing */
if (here->VDMOSmode >= 0) {
cdhat=
here->VDMOScd-
here->VDMOSgbd * delvbd +
here->VDMOSgmbs * delvbs +
here->VDMOSgm * delvgs +
here->VDMOSgds * delvds ;
} else {
cdhat=
here->VDMOScd -
( here->VDMOSgbd -
here->VDMOSgmbs) * delvbd -
here->VDMOSgm * delvgd +
here->VDMOSgds * delvds ;
}
cbhat=
here->VDMOScbs +
here->VDMOScbd +
here->VDMOSgbd * delvbd +
here->VDMOSgbs * delvbs ;
/*
* check convergence
*/
tol=ckt->CKTreltol*MAX(fabs(cdhat),fabs(here->VDMOScd))+
ckt->CKTabstol;
if (fabs(cdhat-here->VDMOScd) >= tol) {
ckt->CKTnoncon++;
ckt->CKTtroubleElt = (GENinstance *) here;
return(OK); /* no reason to continue, we haven't converged */
} else {
tol=ckt->CKTreltol*
MAX(fabs(cbhat),fabs(here->VDMOScbs+here->VDMOScbd))+
ckt->CKTabstol;
if (fabs(cbhat-(here->VDMOScbs+here->VDMOScbd)) > tol) {
ckt->CKTnoncon++;
ckt->CKTtroubleElt = (GENinstance *) here;
return(OK); /* no reason to continue, we haven't converged*/
}
}
}
}
return(OK);
}

532
src/spicelib/devices/vdmos/vdmosdefs.h
View File

@ -0,0 +1,532 @@
/**********
Copyright 1990 Regents of the University of California. All rights reserved.
Author: 1985 Thomas L. Quarles
Modified: 2000 AlansFixes
**********/
#ifndef VDMOS
#define VDMOS
#include "ngspice/ifsim.h"
#include "ngspice/cktdefs.h"
#include "ngspice/gendefs.h"
#include "ngspice/complex.h"
#include "ngspice/noisedef.h"
/* declarations for level 1 MOSFETs */
/* indices to the array of MOSFET(1) noise sources */
enum {
VDMOSRDNOIZ = 0,
VDMOSRSNOIZ,
VDMOSIDNOIZ,
VDMOSFLNOIZ,
VDMOSTOTNOIZ,
/* finally, the number of noise sources */
VDMOSNSRCS
};
/* information needed for each instance */
typedef struct sVDMOSinstance {
struct GENinstance gen;
#define VDMOSmodPtr(inst) ((struct sVDMOSmodel *)((inst)->gen.GENmodPtr))
#define VDMOSnextInstance(inst) ((struct sVDMOSinstance *)((inst)->gen.GENnextInstance))
#define VDMOSname gen.GENname
#define VDMOSstates gen.GENstate
const int VDMOSdNode; /* number of the gate node of the mosfet */
const int VDMOSgNode; /* number of the gate node of the mosfet */
const int VDMOSsNode; /* number of the source node of the mosfet */
const int VDMOSbNode; /* number of the bulk node of the mosfet */
int VDMOSdNodePrime; /* number of the internal drain node of the mosfet */
int VDMOSsNodePrime; /* number of the internal source node of the mosfet */
double VDMOSm; /* parallel device multiplier */
double VDMOSl; /* the length of the channel region */
double VDMOSw; /* the width of the channel region */
double VDMOSdrainArea; /* the area of the drain diffusion */
double VDMOSsourceArea; /* the area of the source diffusion */
double VDMOSdrainSquares; /* the length of the drain in squares */
double VDMOSsourceSquares; /* the length of the source in squares */
double VDMOSdrainPerimiter;
double VDMOSsourcePerimiter;
double VDMOSsourceConductance; /*conductance of source(or 0):set in setup*/
double VDMOSdrainConductance; /*conductance of drain(or 0):set in setup*/
double VDMOStemp; /* operating temperature of this instance */
double VDMOSdtemp; /* operating temperature of the instance relative to circuit temperature*/
double VDMOStTransconductance; /* temperature corrected transconductance*/
double VDMOStSurfMob; /* temperature corrected surface mobility */
double VDMOStPhi; /* temperature corrected Phi */
double VDMOStVto; /* temperature corrected Vto */
double VDMOStSatCur; /* temperature corrected saturation Cur. */
double VDMOStSatCurDens; /* temperature corrected saturation Cur. density*/
double VDMOStCbd; /* temperature corrected B-D Capacitance */
double VDMOStCbs; /* temperature corrected B-S Capacitance */
double VDMOStCj; /* temperature corrected Bulk bottom Capacitance */
double VDMOStCjsw; /* temperature corrected Bulk side Capacitance */
double VDMOStBulkPot; /* temperature corrected Bulk potential */
double VDMOStDepCap; /* temperature adjusted transition point in */
/* the cureve matching Fc * Vj */
double VDMOStVbi; /* temperature adjusted Vbi */
double VDMOSicVBS; /* initial condition B-S voltage */
double VDMOSicVDS; /* initial condition D-S voltage */
double VDMOSicVGS; /* initial condition G-S voltage */
double VDMOSvon;
double VDMOSvdsat;
double VDMOSsourceVcrit; /* Vcrit for pos. vds */
double VDMOSdrainVcrit; /* Vcrit for pos. vds */
double VDMOScd;
double VDMOScbs;
double VDMOScbd;
double VDMOSgmbs;
double VDMOSgm;
double VDMOSgds;
double VDMOSgbd;
double VDMOSgbs;
double VDMOScapbd;
double VDMOScapbs;
double VDMOSCbd;
double VDMOSCbdsw;
double VDMOSCbs;
double VDMOSCbssw;
double VDMOSf2d;
double VDMOSf3d;
double VDMOSf4d;
double VDMOSf2s;
double VDMOSf3s;
double VDMOSf4s;
/*
* naming convention:
* x = vgs
* y = vbs
* z = vds
* cdr = cdrain
*/
#define VDMOSNDCOEFFS 30
#ifndef NODISTO
double VDMOSdCoeffs[VDMOSNDCOEFFS];
#else /* NODISTO */
double *VDMOSdCoeffs;
#endif /* NODISTO */
#ifndef CONFIG
#define capbs2 VDMOSdCoeffs[0]
#define capbs3 VDMOSdCoeffs[1]
#define capbd2 VDMOSdCoeffs[2]
#define capbd3 VDMOSdCoeffs[3]
#define gbs2 VDMOSdCoeffs[4]
#define gbs3 VDMOSdCoeffs[5]
#define gbd2 VDMOSdCoeffs[6]
#define gbd3 VDMOSdCoeffs[7]
#define capgb2 VDMOSdCoeffs[8]
#define capgb3 VDMOSdCoeffs[9]
#define cdr_x2 VDMOSdCoeffs[10]
#define cdr_y2 VDMOSdCoeffs[11]
#define cdr_z2 VDMOSdCoeffs[12]
#define cdr_xy VDMOSdCoeffs[13]
#define cdr_yz VDMOSdCoeffs[14]
#define cdr_xz VDMOSdCoeffs[15]
#define cdr_x3 VDMOSdCoeffs[16]
#define cdr_y3 VDMOSdCoeffs[17]
#define cdr_z3 VDMOSdCoeffs[18]
#define cdr_x2z VDMOSdCoeffs[19]
#define cdr_x2y VDMOSdCoeffs[20]
#define cdr_y2z VDMOSdCoeffs[21]
#define cdr_xy2 VDMOSdCoeffs[22]
#define cdr_xz2 VDMOSdCoeffs[23]
#define cdr_yz2 VDMOSdCoeffs[24]
#define cdr_xyz VDMOSdCoeffs[25]
#define capgs2 VDMOSdCoeffs[26]
#define capgs3 VDMOSdCoeffs[27]
#define capgd2 VDMOSdCoeffs[28]
#define capgd3 VDMOSdCoeffs[29]
#endif
#ifndef NONOISE
double VDMOSnVar[NSTATVARS][VDMOSNSRCS];
#else /* NONOISE */
double **VDMOSnVar;
#endif /* NONOISE */
int VDMOSmode; /* device mode : 1 = normal, -1 = inverse */
unsigned VDMOSoff:1; /* non-zero to indicate device is off for dc analysis*/
unsigned VDMOStempGiven :1; /* instance temperature specified */
unsigned VDMOSdtempGiven :1; /* instance delta temperature specified */
unsigned VDMOSmGiven :1;
unsigned VDMOSlGiven :1;
unsigned VDMOSwGiven :1;
unsigned VDMOSdrainAreaGiven :1;
unsigned VDMOSsourceAreaGiven :1;
unsigned VDMOSdrainSquaresGiven :1;
unsigned VDMOSsourceSquaresGiven :1;
unsigned VDMOSdrainPerimiterGiven :1;
unsigned VDMOSsourcePerimiterGiven :1;
unsigned VDMOSdNodePrimeSet :1;
unsigned VDMOSsNodePrimeSet :1;
unsigned VDMOSicVBSGiven :1;
unsigned VDMOSicVDSGiven :1;
unsigned VDMOSicVGSGiven :1;
unsigned VDMOSvonGiven :1;
unsigned VDMOSvdsatGiven :1;
unsigned VDMOSmodeGiven :1;
double *VDMOSDdPtr; /* pointer to sparse matrix element at
* (Drain node,drain node) */
double *VDMOSGgPtr; /* pointer to sparse matrix element at
* (gate node,gate node) */
double *VDMOSSsPtr; /* pointer to sparse matrix element at
* (source node,source node) */
double *VDMOSBbPtr; /* pointer to sparse matrix element at
* (bulk node,bulk node) */
double *VDMOSDPdpPtr; /* pointer to sparse matrix element at
* (drain prime node,drain prime node) */
double *VDMOSSPspPtr; /* pointer to sparse matrix element at
* (source prime node,source prime node) */
double *VDMOSDdpPtr; /* pointer to sparse matrix element at
* (drain node,drain prime node) */
double *VDMOSGbPtr; /* pointer to sparse matrix element at
* (gate node,bulk node) */
double *VDMOSGdpPtr; /* pointer to sparse matrix element at
* (gate node,drain prime node) */
double *VDMOSGspPtr; /* pointer to sparse matrix element at
* (gate node,source prime node) */
double *VDMOSSspPtr; /* pointer to sparse matrix element at
* (source node,source prime node) */
double *VDMOSBdpPtr; /* pointer to sparse matrix element at
* (bulk node,drain prime node) */
double *VDMOSBspPtr; /* pointer to sparse matrix element at
* (bulk node,source prime node) */
double *VDMOSDPspPtr; /* pointer to sparse matrix element at
* (drain prime node,source prime node) */
double *VDMOSDPdPtr; /* pointer to sparse matrix element at
* (drain prime node,drain node) */
double *VDMOSBgPtr; /* pointer to sparse matrix element at
* (bulk node,gate node) */
double *VDMOSDPgPtr; /* pointer to sparse matrix element at
* (drain prime node,gate node) */
double *VDMOSSPgPtr; /* pointer to sparse matrix element at
* (source prime node,gate node) */
double *VDMOSSPsPtr; /* pointer to sparse matrix element at
* (source prime node,source node) */
double *VDMOSDPbPtr; /* pointer to sparse matrix element at
* (drain prime node,bulk node) */
double *VDMOSSPbPtr; /* pointer to sparse matrix element at
* (source prime node,bulk node) */
double *VDMOSSPdpPtr; /* pointer to sparse matrix element at
* (source prime node,drain prime node) */
int VDMOSsenParmNo; /* parameter # for sensitivity use;
set equal to 0 if neither length
nor width of the mosfet is a design
parameter */
unsigned VDMOSsens_l :1; /* field which indicates whether
length of the mosfet is a design
parameter or not */
unsigned VDMOSsens_w :1; /* field which indicates whether
width of the mosfet is a design
parameter or not */
unsigned VDMOSsenPertFlag :1; /* indictes whether the the
parameter of the particular instance is
to be perturbed */
double VDMOScgs;
double VDMOScgd;
double VDMOScgb;
double *VDMOSsens;
#define VDMOSsenCgs VDMOSsens /* contains pertured values of cgs */
#define VDMOSsenCgd VDMOSsens + 6 /* contains perturbed values of cgd*/
#define VDMOSsenCgb VDMOSsens + 12 /* contains perturbed values of cgb*/
#define VDMOSsenCbd VDMOSsens + 18 /* contains perturbed values of cbd*/
#define VDMOSsenCbs VDMOSsens + 24 /* contains perturbed values of cbs*/
#define VDMOSsenGds VDMOSsens + 30 /* contains perturbed values of gds*/
#define VDMOSsenGbs VDMOSsens + 36 /* contains perturbed values of gbs*/
#define VDMOSsenGbd VDMOSsens + 42 /* contains perturbed values of gbd*/
#define VDMOSsenGm VDMOSsens + 48 /* contains perturbed values of gm*/
#define VDMOSsenGmbs VDMOSsens + 54 /* contains perturbed values of gmbs*/
#define VDMOSdphigs_dl VDMOSsens + 60
#define VDMOSdphigd_dl VDMOSsens + 61
#define VDMOSdphigb_dl VDMOSsens + 62
#define VDMOSdphibs_dl VDMOSsens + 63
#define VDMOSdphibd_dl VDMOSsens + 64
#define VDMOSdphigs_dw VDMOSsens + 65
#define VDMOSdphigd_dw VDMOSsens + 66
#define VDMOSdphigb_dw VDMOSsens + 67
#define VDMOSdphibs_dw VDMOSsens + 68
#define VDMOSdphibd_dw VDMOSsens + 69
} VDMOSinstance ;
#define VDMOSvbd VDMOSstates+ 0 /* bulk-drain voltage */
#define VDMOSvbs VDMOSstates+ 1 /* bulk-source voltage */
#define VDMOSvgs VDMOSstates+ 2 /* gate-source voltage */
#define VDMOSvds VDMOSstates+ 3 /* drain-source voltage */
#define VDMOScapgs VDMOSstates+4 /* gate-source capacitor value */
#define VDMOSqgs VDMOSstates+ 5 /* gate-source capacitor charge */
#define VDMOScqgs VDMOSstates+ 6 /* gate-source capacitor current */
#define VDMOScapgd VDMOSstates+ 7 /* gate-drain capacitor value */
#define VDMOSqgd VDMOSstates+ 8 /* gate-drain capacitor charge */
#define VDMOScqgd VDMOSstates+ 9 /* gate-drain capacitor current */
#define VDMOScapgb VDMOSstates+10 /* gate-bulk capacitor value */
#define VDMOSqgb VDMOSstates+ 11 /* gate-bulk capacitor charge */
#define VDMOScqgb VDMOSstates+ 12 /* gate-bulk capacitor current */
#define VDMOSqbd VDMOSstates+ 13 /* bulk-drain capacitor charge */
#define VDMOScqbd VDMOSstates+ 14 /* bulk-drain capacitor current */
#define VDMOSqbs VDMOSstates+ 15 /* bulk-source capacitor charge */
#define VDMOScqbs VDMOSstates+ 16 /* bulk-source capacitor current */
#define VDMOSnumStates 17
#define VDMOSsensxpgs VDMOSstates+17 /* charge sensitivities and their derivatives.
* +18 for the derivatives
* pointer to the beginning of the array */
#define VDMOSsensxpgd VDMOSstates+19
#define VDMOSsensxpgb VDMOSstates+21
#define VDMOSsensxpbs VDMOSstates+23
#define VDMOSsensxpbd VDMOSstates+25
#define VDMOSnumSenStates 10
/* per model data */
/* NOTE: parameters marked 'input - use xxxx' are paramters for
* which a temperature correction is applied in VDMOStemp, thus
* the VDMOSxxxx value in the per-instance structure should be used
* instead in all calculations
*/
typedef struct sVDMOSmodel { /* model structure for a resistor */
struct GENmodel gen;
#define VDMOSmodType gen.GENmodType
#define VDMOSnextModel(inst) ((struct sVDMOSmodel *)((inst)->gen.GENnextModel))
#define VDMOSinstances(inst) ((VDMOSinstance *)((inst)->gen.GENinstances))
#define VDMOSmodName gen.GENmodName
int VDMOStype; /* device type : 1 = nmos, -1 = pmos */
double VDMOStnom; /* temperature at which parameters measured */
double VDMOSlatDiff;
double VDMOSjctSatCurDensity; /* input - use tSatCurDens */
double VDMOSjctSatCur; /* input - use tSatCur */
double VDMOSdrainResistance;
double VDMOSsourceResistance;
double VDMOSsheetResistance;
double VDMOStransconductance; /* input - use tTransconductance */
double VDMOSgateSourceOverlapCapFactor;
double VDMOSgateDrainOverlapCapFactor;
double VDMOSgateBulkOverlapCapFactor;
double VDMOSoxideCapFactor;
double VDMOSvt0; /* input - use tVto */
double VDMOScapBD; /* input - use tCbd */
double VDMOScapBS; /* input - use tCbs */
double VDMOSbulkCapFactor; /* input - use tCj */
double VDMOSsideWallCapFactor; /* input - use tCjsw */
double VDMOSbulkJctPotential; /* input - use tBulkPot */
double VDMOSbulkJctBotGradingCoeff;
double VDMOSbulkJctSideGradingCoeff;
double VDMOSfwdCapDepCoeff;
double VDMOSphi; /* input - use tPhi */
double VDMOSgamma;
double VDMOSlambda;
double VDMOSsubstrateDoping;
int VDMOSgateType;
double VDMOSsurfaceStateDensity;
double VDMOSoxideThickness;
double VDMOSsurfaceMobility; /* input - use tSurfMob */
double VDMOSfNcoef;
double VDMOSfNexp;
unsigned VDMOStypeGiven :1;
unsigned VDMOSlatDiffGiven :1;
unsigned VDMOSjctSatCurDensityGiven :1;
unsigned VDMOSjctSatCurGiven :1;
unsigned VDMOSdrainResistanceGiven :1;
unsigned VDMOSsourceResistanceGiven :1;
unsigned VDMOSsheetResistanceGiven :1;
unsigned VDMOStransconductanceGiven :1;
unsigned VDMOSgateSourceOverlapCapFactorGiven :1;
unsigned VDMOSgateDrainOverlapCapFactorGiven :1;
unsigned VDMOSgateBulkOverlapCapFactorGiven :1;
unsigned VDMOSvt0Given :1;
unsigned VDMOScapBDGiven :1;
unsigned VDMOScapBSGiven :1;
unsigned VDMOSbulkCapFactorGiven :1;
unsigned VDMOSsideWallCapFactorGiven :1;
unsigned VDMOSbulkJctPotentialGiven :1;
unsigned VDMOSbulkJctBotGradingCoeffGiven :1;
unsigned VDMOSbulkJctSideGradingCoeffGiven :1;
unsigned VDMOSfwdCapDepCoeffGiven :1;
unsigned VDMOSphiGiven :1;
unsigned VDMOSgammaGiven :1;
unsigned VDMOSlambdaGiven :1;
unsigned VDMOSsubstrateDopingGiven :1;
unsigned VDMOSgateTypeGiven :1;
unsigned VDMOSsurfaceStateDensityGiven :1;
unsigned VDMOSoxideThicknessGiven :1;
unsigned VDMOSsurfaceMobilityGiven :1;
unsigned VDMOStnomGiven :1;
unsigned VDMOSfNcoefGiven :1;
unsigned VDMOSfNexpGiven :1;
} VDMOSmodel;
#ifndef NMOS
#define NMOS 1
#define PMOS -1
#endif /*NMOS*/
/* device parameters */
enum {
VDMOS_W = 1,
VDMOS_L,
VDMOS_AS,
VDMOS_AD,
VDMOS_PS,
VDMOS_PD,
VDMOS_NRS,
VDMOS_NRD,
VDMOS_OFF,
VDMOS_IC,
VDMOS_IC_VBS,
VDMOS_IC_VDS,
VDMOS_IC_VGS,
VDMOS_W_SENS,
VDMOS_L_SENS,
VDMOS_CB,
VDMOS_CG,
VDMOS_CS,
VDMOS_POWER,
VDMOS_TEMP,
VDMOS_M,
VDMOS_DTEMP,
};
/* model paramerers */
enum {
VDMOS_MOD_VTO = 101,
VDMOS_MOD_KP,
VDMOS_MOD_GAMMA,
VDMOS_MOD_PHI,
VDMOS_MOD_LAMBDA,
VDMOS_MOD_RD,
VDMOS_MOD_RS,
VDMOS_MOD_CBD,
VDMOS_MOD_CBS,
VDMOS_MOD_IS,
VDMOS_MOD_PB,
VDMOS_MOD_CGSO,
VDMOS_MOD_CGDO,
VDMOS_MOD_CGBO,
VDMOS_MOD_CJ,
VDMOS_MOD_MJ,
VDMOS_MOD_CJSW,
VDMOS_MOD_MJSW,
VDMOS_MOD_JS,
VDMOS_MOD_TOX,
VDMOS_MOD_LD,
VDMOS_MOD_RSH,
VDMOS_MOD_U0,
VDMOS_MOD_FC,
VDMOS_MOD_NSUB,
VDMOS_MOD_TPG,
VDMOS_MOD_NSS,
VDMOS_MOD_NMOS,
VDMOS_MOD_PMOS,
VDMOS_MOD_TNOM,
VDMOS_MOD_KF,
VDMOS_MOD_AF,
VDMOS_MOD_TYPE,
};
/* device questions */
enum {
VDMOS_CGS = 201,
VDMOS_CGD,
VDMOS_DNODE,
VDMOS_GNODE,
VDMOS_SNODE,
VDMOS_BNODE,
VDMOS_DNODEPRIME,
VDMOS_SNODEPRIME,
VDMOS_SOURCECONDUCT,
VDMOS_DRAINCONDUCT,
VDMOS_VON,
VDMOS_VDSAT,
VDMOS_SOURCEVCRIT,
VDMOS_DRAINVCRIT,
VDMOS_CD,
VDMOS_CBS,
VDMOS_CBD,
VDMOS_GMBS,
VDMOS_GM,
VDMOS_GDS,
VDMOS_GBD,
VDMOS_GBS,
VDMOS_CAPBD,
VDMOS_CAPBS,
VDMOS_CAPZEROBIASBD,
VDMOS_CAPZEROBIASBDSW,
VDMOS_CAPZEROBIASBS,
VDMOS_CAPZEROBIASBSSW,
VDMOS_VBD,
VDMOS_VBS,
VDMOS_VGS,
VDMOS_VDS,
VDMOS_CAPGS,
VDMOS_QGS,
VDMOS_CQGS,
VDMOS_CAPGD,
VDMOS_QGD,
VDMOS_CQGD,
VDMOS_CAPGB,
VDMOS_QGB,
VDMOS_CQGB,
VDMOS_QBD,
VDMOS_CQBD,
VDMOS_QBS,
VDMOS_CQBS,
VDMOS_L_SENS_REAL,
VDMOS_L_SENS_IMAG,
VDMOS_L_SENS_MAG,
VDMOS_L_SENS_PH,
VDMOS_L_SENS_CPLX,
VDMOS_W_SENS_REAL,
VDMOS_W_SENS_IMAG,
VDMOS_W_SENS_MAG,
VDMOS_W_SENS_PH,
VDMOS_W_SENS_CPLX,
VDMOS_L_SENS_DC,
VDMOS_W_SENS_DC,
VDMOS_SOURCERESIST,
VDMOS_DRAINRESIST,
};
/* model questions */
#include "vdmosext.h"
#endif /*VDMOS*/

18
src/spicelib/devices/vdmos/vdmosdel.c
View File

@ -0,0 +1,18 @@
/**********
Copyright 1990 Regents of the University of California. All rights reserved.
Author: 1985 Thomas L. Quarles
**********/
#include "ngspice/ngspice.h"
#include "vdmosdefs.h"
#include "ngspice/sperror.h"
#include "ngspice/suffix.h"
int
VDMOSdelete(GENinstance *gen_inst)
{
VDMOSinstance *inst = (VDMOSinstance *) gen_inst;
FREE(inst->VDMOSsens);
return OK;
}

1379
src/spicelib/devices/vdmos/vdmosdist.c
File diff suppressed because it is too large
View File

578
src/spicelib/devices/vdmos/vdmosdset.c
View File

@ -0,0 +1,578 @@
/**********
Copyright 1990 Regents of the University of California. All rights reserved.
Author: 1988 Jaijeet S Roychowdhury
**********/
#include "ngspice/ngspice.h"
#include "ngspice/cktdefs.h"
#include "ngspice/devdefs.h"
#include "vdmosdefs.h"
#include "ngspice/distodef.h"
#include "ngspice/const.h"
#include "ngspice/sperror.h"
#include "ngspice/suffix.h"
int
VDMOSdSetup(GENmodel *inModel, CKTcircuit *ckt)
/* actually load the current value into the
* sparse matrix previously provided
*/
{
VDMOSmodel *model = (VDMOSmodel *) inModel;
VDMOSinstance *here;
double Beta;
double DrainSatCur;
double EffectiveLength;
double GateBulkOverlapCap;
double GateDrainOverlapCap;
double GateSourceOverlapCap;
double OxideCap;
double SourceSatCur;
double gm;
double gds;
double gb;
double ebd;
double vgst;
double evbs;
double sargsw;
double vbd;
double vbs;
double vds;
double arg;
double sarg;
double vdsat;
double vgd;
double vgs;
double von;
double vt;
double lgbs;
double lgbs2;
double lgbs3;
double lgbd;
double lgbd2;
double lgbd3;
double gm2;
double gds2;
double gb2;
double gmds;
double gmb;
double gbds;
double gm3;
double gds3;
double gb3;
double gm2ds;
double gmds2;
double gm2b;
double gmb2;
double gb2ds;
double gbds2;
double lcapgb2;
double lcapgb3;
double lcapgs2;
double lcapgs3;
double lcapgd2;
double lcapgd3;
double lcapbs2;
double lcapbs3;
double lcapbd2;
double lcapbd3;
double gmbds = 0.0;
/* loop through all the VDMOS device models */
for( ; model != NULL; model = VDMOSnextModel(model)) {
/* loop through all the instances of the model */
for (here = VDMOSinstances(model); here != NULL ;
here=VDMOSnextInstance(here)) {
vt = CONSTKoverQ * here->VDMOStemp;
EffectiveLength=here->VDMOSl - 2*model->VDMOSlatDiff;
if( (here->VDMOStSatCurDens == 0) ||
(here->VDMOSdrainArea == 0) ||
(here->VDMOSsourceArea == 0)) {
DrainSatCur = here->VDMOSm * here->VDMOStSatCur;
SourceSatCur = here->VDMOSm * here->VDMOStSatCur;
} else {
DrainSatCur = here->VDMOStSatCurDens *
here->VDMOSm * here->VDMOSdrainArea;
SourceSatCur = here->VDMOStSatCurDens *
here->VDMOSm * here->VDMOSsourceArea;
}
GateSourceOverlapCap = model->VDMOSgateSourceOverlapCapFactor *
here->VDMOSm * here->VDMOSw;
GateDrainOverlapCap = model->VDMOSgateDrainOverlapCapFactor *
here->VDMOSm * here->VDMOSw;
GateBulkOverlapCap = model->VDMOSgateBulkOverlapCapFactor *
here->VDMOSm * EffectiveLength;
Beta = here->VDMOStTransconductance * here->VDMOSm *
here->VDMOSw/EffectiveLength;
OxideCap = model->VDMOSoxideCapFactor * EffectiveLength *
here->VDMOSm * here->VDMOSw;
vbs = model->VDMOStype * (
*(ckt->CKTrhsOld+here->VDMOSbNode) -
*(ckt->CKTrhsOld+here->VDMOSsNodePrime));
vgs = model->VDMOStype * (
*(ckt->CKTrhsOld+here->VDMOSgNode) -
*(ckt->CKTrhsOld+here->VDMOSsNodePrime));
vds = model->VDMOStype * (
*(ckt->CKTrhsOld+here->VDMOSdNodePrime) -
*(ckt->CKTrhsOld+here->VDMOSsNodePrime));
/* now some common crunching for some more useful quantities */
vbd=vbs-vds;
vgd=vgs-vds;
/*
* bulk-source and bulk-drain diodes
* here we just evaluate the ideal diode current and the
* corresponding derivative (conductance).
*/
if(vbs <= 0) {
lgbs = SourceSatCur/vt;
lgbs += ckt->CKTgmin;
lgbs2 = lgbs3 = 0;
} else {
evbs = exp(MIN(MAX_EXP_ARG,vbs/vt));
lgbs = SourceSatCur*evbs/vt + ckt->CKTgmin;
lgbs2 = model->VDMOStype *0.5 * (lgbs - ckt->CKTgmin)/vt;
lgbs3 = model->VDMOStype *lgbs2/(vt*3);
}
if(vbd <= 0) {
lgbd = DrainSatCur/vt;
lgbd += ckt->CKTgmin;
lgbd2 = lgbd3 = 0;
} else {
ebd = exp(MIN(MAX_EXP_ARG,vbd/vt));
lgbd = DrainSatCur*ebd/vt +ckt->CKTgmin;
lgbd2 = model->VDMOStype *0.5 * (lgbd - ckt->CKTgmin)/vt;
lgbd3 = model->VDMOStype *lgbd2/(vt*3);
}
/* now to determine whether the user was able to correctly
* identify the source and drain of his device
*/
if(vds >= 0) {
/* normal mode */
here->VDMOSmode = 1;
} else {
/* inverse mode */
here->VDMOSmode = -1;
}
/*
* this block of code evaluates the drain current and its
* derivatives using the shichman-hodges model and the
* charges associated with the gate, channel and bulk for
* mosfets
*
*/
/* the following variables are local to this code block until
* it is obvious that they can be made global
*/
{
double betap;
double dvondvbs;
double d2vondvbs2;
double d3vondvbs3;
if ((here->VDMOSmode==1?vbs:vbd) <= 0 ) {
sarg=sqrt(here->VDMOStPhi-(here->VDMOSmode==1?vbs:vbd));
if (-model->VDMOSgamma != 0.0) {
dvondvbs = -model->VDMOSgamma*0.5/sarg;
d2vondvbs2 = - dvondvbs*0.5/(sarg*sarg);
d3vondvbs3 = 1.5*d2vondvbs2/(sarg*sarg);
}
else {
dvondvbs = d2vondvbs2 = d3vondvbs3 = 0.0;
}
} else {
sarg=sqrt(here->VDMOStPhi);
if (model->VDMOSgamma != 0.0) {
dvondvbs = -model->VDMOSgamma/(sarg+sarg);
}
else {
dvondvbs = 0.0;
}
d2vondvbs2 = d3vondvbs3 = 0;
sarg=sarg-(here->VDMOSmode==1?vbs:vbd)/(sarg+sarg);
sarg=MAX(0,sarg);
dvondvbs = (sarg<=0?0:dvondvbs);
}
von=(here->VDMOStVbi*model->VDMOStype)+model->VDMOSgamma*sarg;
vgst=(here->VDMOSmode==1?vgs:vgd)-von;
vdsat=MAX(vgst,0);
/* if (sarg <= 0) {
arg=0;
} else {
arg=model->VDMOSgamma/(sarg+sarg);
} */
if (vgst <= 0) {
/*
* cutoff region
*/
/* cdrain = 0 */
gm=0;
gds=0;
gb=0;
gm2=gb2=gds2=0;
gmds=gbds=gmb=0;
gm3=gb3=gds3=0;
gm2ds=gmds2=gm2b=gmb2=gb2ds=gbds2=0;
} else{
/*
* saturation region
*/
betap=Beta*(1+model->VDMOSlambda*(vds*here->VDMOSmode));
/* cdrain = betap * vgst * vgst * 0.5; */
if (vgst <= (vds*here->VDMOSmode)){
gm=betap*vgst;
gds=model->VDMOSlambda*Beta*vgst*vgst*.5;
/* gb=here->VDMOSgm*arg; */
gb= -gm*dvondvbs;
gm2 = betap;
gds2 = 0;
gb2 = -(gm*d2vondvbs2 - betap*dvondvbs*dvondvbs);
gmds = vgst*model->VDMOSlambda*Beta;
gbds = - gmds*dvondvbs;
gmb = -betap*dvondvbs;
gm3 = 0;
gb3 = -(gmb*d2vondvbs2 + gm*d3vondvbs3 -
betap*2*dvondvbs*d2vondvbs2);
gds3 = 0;
gm2ds = Beta * model->VDMOSlambda;
gm2b = 0;
gmb2 = -betap*d2vondvbs2;
gb2ds = -(gmds*d2vondvbs2 - dvondvbs*dvondvbs*
Beta * model->VDMOSlambda);
gmds2 = 0;
gbds2 = 0;
gmbds = -Beta * model->VDMOSlambda*dvondvbs;
} else {
/*
* linear region
*/
/* cdrain = betap * vds * (vgst - vds/2); */
gm=betap*(vds*here->VDMOSmode);
gds= Beta * model->VDMOSlambda*(vgst*
vds*here->VDMOSmode - vds*vds*0.5) +
betap*(vgst - vds*here->VDMOSmode);
/* gb=gm*arg; */
gb = - gm*dvondvbs;
gm2 = 0;
gb2 = -(gm*d2vondvbs2);
gds2 = 2*Beta * model->VDMOSlambda*(vgst -
vds*here->VDMOSmode) - betap;
gmds = Beta * model->VDMOSlambda* vds *
here->VDMOSmode + betap;
gbds = - gmds*dvondvbs;
gmb=0;
gm3=0;
gb3 = -gm*d3vondvbs3;
gds3 = -Beta*model->VDMOSlambda*3.;
gm2ds=gm2b=gmb2=0;
gmds2 = 2*model->VDMOSlambda*Beta;
gb2ds = -(gmds*d2vondvbs2);
gbds2 = -gmds2*dvondvbs;
gmbds = 0;
}
}
/*
* finished
*/
} /* code block */
/*
* COMPUTE EQUIVALENT DRAIN CURRENT SOURCE
*/
/*
* now we do the hard part of the bulk-drain and bulk-source
* diode - we evaluate the non-linear capacitance and
* charge
*
* the basic equations are not hard, but the implementation
* is somewhat long in an attempt to avoid log/exponential
* evaluations
*/
/*
* charge storage elements
*
*.. bulk-drain and bulk-source depletion capacitances
*/
if (vbs < here->VDMOStDepCap){
arg=1-vbs/here->VDMOStBulkPot;
/*
* the following block looks somewhat long and messy,
* but since most users use the default grading
* coefficients of .5, and sqrt is MUCH faster than an
* exp(log()) we use this special case code to buy time.
* (as much as 10% of total job time!)
*/
if(model->VDMOSbulkJctBotGradingCoeff ==
model->VDMOSbulkJctSideGradingCoeff) {
if(model->VDMOSbulkJctBotGradingCoeff == .5) {
sarg = sargsw = 1/sqrt(arg);
} else {
sarg = sargsw =
exp(-model->VDMOSbulkJctBotGradingCoeff*
log(arg));
}
} else {
if(model->VDMOSbulkJctBotGradingCoeff == .5) {
sarg = 1/sqrt(arg);
} else {
sarg = exp(-model->VDMOSbulkJctBotGradingCoeff*
log(arg));
}
if(model->VDMOSbulkJctSideGradingCoeff == .5) {
sargsw = 1/sqrt(arg);
} else {
sargsw =exp(-model->VDMOSbulkJctSideGradingCoeff*
log(arg));
}
}
/*
lcapbs=here->VDMOSCbs*sarg+
here->VDMOSCbssw*sargsw;
*/
lcapbs2 = model->VDMOStype*0.5/here->VDMOStBulkPot*(
here->VDMOSCbs*model->VDMOSbulkJctBotGradingCoeff*
sarg/arg + here->VDMOSCbssw*
model->VDMOSbulkJctSideGradingCoeff*sargsw/arg);
lcapbs3 = here->VDMOSCbs*sarg*
model->VDMOSbulkJctBotGradingCoeff*
(model->VDMOSbulkJctBotGradingCoeff+1);
lcapbs3 += here->VDMOSCbssw*sargsw*
model->VDMOSbulkJctSideGradingCoeff*
(model->VDMOSbulkJctSideGradingCoeff+1);
lcapbs3 = lcapbs3/(6*here->VDMOStBulkPot*
here->VDMOStBulkPot*arg*arg);
} else {
/* *(ckt->CKTstate0 + here->VDMOSqbs)= here->VDMOSf4s +
vbs*(here->VDMOSf2s+vbs*(here->VDMOSf3s/2));*/
/*
lcapbs=here->VDMOSf2s+here->VDMOSf3s*vbs;
*/
lcapbs2 = 0.5*here->VDMOSf3s;
lcapbs3 = 0;
}
if (vbd < here->VDMOStDepCap) {
arg=1-vbd/here->VDMOStBulkPot;
/*
* the following block looks somewhat long and messy,
* but since most users use the default grading
* coefficients of .5, and sqrt is MUCH faster than an
* exp(log()) we use this special case code to buy time.
* (as much as 10% of total job time!)
*/
#ifndef NOSQRT
if(model->VDMOSbulkJctBotGradingCoeff == .5 &&
model->VDMOSbulkJctSideGradingCoeff == .5) {
sarg = sargsw = 1/sqrt(arg);
} else {
if(model->VDMOSbulkJctBotGradingCoeff == .5) {
sarg = 1/sqrt(arg);
} else {
#endif /*NOSQRT*/
sarg = exp(-model->VDMOSbulkJctBotGradingCoeff*
log(arg));
#ifndef NOSQRT
}
if(model->VDMOSbulkJctSideGradingCoeff == .5) {
sargsw = 1/sqrt(arg);
} else {
#endif /*NOSQRT*/
sargsw =exp(-model->VDMOSbulkJctSideGradingCoeff*
log(arg));
#ifndef NOSQRT
}
}
#endif /*NOSQRT*/
/*
lcapbd=here->VDMOSCbd*sarg+
here->VDMOSCbdsw*sargsw;
*/
lcapbd2 = model->VDMOStype*0.5/here->VDMOStBulkPot*(
here->VDMOSCbd*model->VDMOSbulkJctBotGradingCoeff*
sarg/arg + here->VDMOSCbdsw*
model->VDMOSbulkJctSideGradingCoeff*sargsw/arg);
lcapbd3 = here->VDMOSCbd*sarg*
model->VDMOSbulkJctBotGradingCoeff*
(model->VDMOSbulkJctBotGradingCoeff+1);
lcapbd3 += here->VDMOSCbdsw*sargsw*
model->VDMOSbulkJctSideGradingCoeff*
(model->VDMOSbulkJctSideGradingCoeff+1);
lcapbd3 = lcapbd3/(6*here->VDMOStBulkPot*
here->VDMOStBulkPot*arg*arg);
} else {
/*
lcapbd=here->VDMOSf2d + vbd * here->VDMOSf3d;
*/
lcapbd2=0.5*here->VDMOSf3d;
lcapbd3=0;
}
/*
* meyer's capacitor model
*/
/*
* the meyer capacitance equations are in DEVqmeyer
* these expressions are derived from those equations.
* these expressions are incorrect; they assume just one
* controlling variable for each charge storage element
* while actually there are several; the VDMOS small
* signal ac linear model is also wrong because it
* ignores controlled capacitive elements. these can be
* corrected (as can the linear ss ac model) if the
* expressions for the charge are available
*/
{
double phi;
double cox;
double vddif;
double vddif1;
double vddif2;
/* von, vgst and vdsat have already been adjusted for
possible source-drain interchange */
phi = here->VDMOStPhi;
cox = OxideCap;
if (vgst <= -phi) {
lcapgb2=lcapgb3=lcapgs2=lcapgs3=lcapgd2=lcapgd3=0;
} else if (vgst <= -phi/2) {
lcapgb2= -cox/(4*phi);
lcapgb3=lcapgs2=lcapgs3=lcapgd2=lcapgd3=0;
} else if (vgst <= 0) {
lcapgb2= -cox/(4*phi);
lcapgb3=lcapgs3=lcapgd2=lcapgd3=0;
lcapgs2 = cox/(3*phi);
} else { /* the VDMOSmodes are around because
vds has not been adjusted */
if (vdsat <= here->VDMOSmode*vds) {
lcapgb2=lcapgb3=lcapgs2=lcapgs3=lcapgd2=lcapgd3=0;
} else {
vddif = 2.0*vdsat-here->VDMOSmode*vds;
vddif1 = vdsat-here->VDMOSmode*vds/*-1.0e-12*/;
vddif2 = vddif*vddif;
lcapgd2 = -vdsat*here->VDMOSmode*vds*cox/(3*vddif*vddif2);
lcapgd3 = - here->VDMOSmode*vds*cox*(vddif - 6*vdsat)/(9*vddif2*vddif2);
lcapgs2 = -vddif1*here->VDMOSmode*vds*cox/(3*vddif*vddif2);
lcapgs3 = - here->VDMOSmode*vds*cox*(vddif - 6*vddif1)/(9*vddif2*vddif2);
lcapgb2=lcapgb3=0;
}
}
}
/* the b-s and b-d diodes need no processing ... */
here->capbs2 = lcapbs2;
here->capbs3 = lcapbs3;
here->capbd2 = lcapbd2;
here->capbd3 = lcapbd3;
here->gbs2 = lgbs2;
here->gbs3 = lgbs3;
here->gbd2 = lgbd2;
here->gbd3 = lgbd3;
here->capgb2 = model->VDMOStype*lcapgb2;
here->capgb3 = lcapgb3;
/*
* process to get Taylor coefficients, taking into
* account type and mode.
*/
if (here->VDMOSmode == 1)
{
/* normal mode - no source-drain interchange */
here->cdr_x2 = gm2;
here->cdr_y2 = gb2;;
here->cdr_z2 = gds2;;
here->cdr_xy = gmb;
here->cdr_yz = gbds;
here->cdr_xz = gmds;
here->cdr_x3 = gm3;
here->cdr_y3 = gb3;
here->cdr_z3 = gds3;
here->cdr_x2z = gm2ds;
here->cdr_x2y = gm2b;
here->cdr_y2z = gb2ds;
here->cdr_xy2 = gmb2;
here->cdr_xz2 = gmds2;
here->cdr_yz2 = gbds2;
here->cdr_xyz = gmbds;
/* the gate caps have been divided and made into
Taylor coeffs., but not adjusted for type */
here->capgs2 = model->VDMOStype*lcapgs2;
here->capgs3 = lcapgs3;
here->capgd2 = model->VDMOStype*lcapgd2;
here->capgd3 = lcapgd3;
} else {
/*
* inverse mode - source and drain interchanged
*/
here->cdr_x2 = -gm2;
here->cdr_y2 = -gb2;
here->cdr_z2 = -(gm2 + gb2 + gds2 + 2*(gmb + gmds + gbds));
here->cdr_xy = -gmb;
here->cdr_yz = gmb + gb2 + gbds;
here->cdr_xz = gm2 + gmb + gmds;
here->cdr_x3 = -gm3;
here->cdr_y3 = -gb3;
here->cdr_z3 = gm3 + gb3 + gds3 +
3*(gm2b + gm2ds + gmb2 + gb2ds + gmds2 + gbds2) + 6*gmbds ;
here->cdr_x2z = gm3 + gm2b + gm2ds;
here->cdr_x2y = -gm2b;
here->cdr_y2z = gmb2 + gb3 + gb2ds;
here->cdr_xy2 = -gmb2;
here->cdr_xz2 = -(gm3 + 2*(gm2b + gm2ds + gmbds) +
gmb2 + gmds2);
here->cdr_yz2 = -(gb3 + 2*(gmb2 + gb2ds + gmbds) +
gm2b + gbds2);
here->cdr_xyz = gm2b + gmb2 + gmbds;
here->capgs2 = model->VDMOStype*lcapgd2;
here->capgs3 = lcapgd3;
here->capgd2 = model->VDMOStype*lcapgs2;
here->capgd3 = lcapgs3;
}
/* now to adjust for type and multiply by factors to convert to Taylor coeffs. */
here->cdr_x2 = 0.5*model->VDMOStype*here->cdr_x2;
here->cdr_y2 = 0.5*model->VDMOStype*here->cdr_y2;
here->cdr_z2 = 0.5*model->VDMOStype*here->cdr_z2;
here->cdr_xy = model->VDMOStype*here->cdr_xy;
here->cdr_yz = model->VDMOStype*here->cdr_yz;
here->cdr_xz = model->VDMOStype*here->cdr_xz;
here->cdr_x3 = here->cdr_x3/6.;
here->cdr_y3 = here->cdr_y3/6.;
here->cdr_z3 = here->cdr_z3/6.;
here->cdr_x2z = 0.5*here->cdr_x2z;
here->cdr_x2y = 0.5*here->cdr_x2y;
here->cdr_y2z = 0.5*here->cdr_y2z;
here->cdr_xy2 = 0.5*here->cdr_xy2;
here->cdr_xz2 = 0.5*here->cdr_xz2;
here->cdr_yz2 = 0.5*here->cdr_yz2;
}
}
return(OK);
}

28
src/spicelib/devices/vdmos/vdmosext.h
View File

@ -0,0 +1,28 @@
/**********
Copyright 1990 Regents of the University of California. All rights reserved.
Author: 1985 Thomas L. Quarles
Modified: 2000 AlansFixes
**********/
extern int VDMOSacLoad(GENmodel *,CKTcircuit*);
extern int VDMOSask(CKTcircuit*,GENinstance*,int,IFvalue*,IFvalue*);
extern int VDMOSdelete(GENinstance*);
extern int VDMOSgetic(GENmodel*,CKTcircuit*);
extern int VDMOSload(GENmodel*,CKTcircuit*);
extern int VDMOSmAsk(CKTcircuit *,GENmodel *,int,IFvalue*);
extern int VDMOSmParam(int,IFvalue*,GENmodel*);
extern int VDMOSparam(int,IFvalue*,GENinstance*,IFvalue*);
extern int VDMOSpzLoad(GENmodel*,CKTcircuit*,SPcomplex*);
extern int VDMOSsAcLoad(GENmodel*,CKTcircuit*);
extern int VDMOSsLoad(GENmodel*,CKTcircuit*);
extern void VDMOSsPrint(GENmodel*,CKTcircuit*);
extern int VDMOSsSetup(SENstruct*,GENmodel*);
extern int VDMOSsUpdate(GENmodel*,CKTcircuit*);
extern int VDMOSsetup(SMPmatrix*,GENmodel*,CKTcircuit*,int*);
extern int VDMOSunsetup(GENmodel*,CKTcircuit*);
extern int VDMOStemp(GENmodel*,CKTcircuit*);
extern int VDMOStrunc(GENmodel*,CKTcircuit*,double*);
extern int VDMOSconvTest(GENmodel*,CKTcircuit*);
extern int VDMOSdisto(int,GENmodel*,CKTcircuit*);
extern int VDMOSnoise(int,int,GENmodel*,CKTcircuit*,Ndata*,double*);
extern int VDMOSdSetup(GENmodel*,CKTcircuit*);

46
src/spicelib/devices/vdmos/vdmosic.c
View File

@ -0,0 +1,46 @@
/**********
Copyright 1990 Regents of the University of California. All rights reserved.
Author: 1985 Thomas L. Quarles
**********/
/*
*/
#include "ngspice/ngspice.h"
#include "ngspice/cktdefs.h"
#include "vdmosdefs.h"
#include "ngspice/sperror.h"
#include "ngspice/suffix.h"
int
VDMOSgetic(GENmodel *inModel, CKTcircuit *ckt)
{
VDMOSmodel *model = (VDMOSmodel *)inModel;
VDMOSinstance *here;
/*
* grab initial conditions out of rhs array. User specified, so use
* external nodes to get values
*/
for( ; model ; model = VDMOSnextModel(model)) {
for(here = VDMOSinstances(model); here ; here = VDMOSnextInstance(here)) {
if(!here->VDMOSicVBSGiven) {
here->VDMOSicVBS =
*(ckt->CKTrhs + here->VDMOSbNode) -
*(ckt->CKTrhs + here->VDMOSsNode);
}
if(!here->VDMOSicVDSGiven) {
here->VDMOSicVDS =
*(ckt->CKTrhs + here->VDMOSdNode) -
*(ckt->CKTrhs + here->VDMOSsNode);
}
if(!here->VDMOSicVGSGiven) {
here->VDMOSicVGS =
*(ckt->CKTrhs + here->VDMOSgNode) -
*(ckt->CKTrhs + here->VDMOSsNode);
}
}
}
return(OK);
}

76
src/spicelib/devices/vdmos/vdmosinit.c
View File

@ -0,0 +1,76 @@
#include "ngspice/config.h"
#include "ngspice/devdefs.h"
#include "vdmositf.h"
#include "vdmosext.h"
#include "vdmosinit.h"
SPICEdev VDMOSinfo = {
.DEVpublic = {
.name = "Vdmos",
.description = "Level 1 MOSfet model with Meyer capacitance model",
.terms = &VDMOSnSize,
.numNames = &VDMOSnSize,
.termNames = VDMOSnames,
.numInstanceParms = &VDMOSpTSize,
.instanceParms = VDMOSpTable,
.numModelParms = &VDMOSmPTSize,
.modelParms = VDMOSmPTable,
.flags = DEV_DEFAULT,
#ifdef XSPICE
.cm_func = NULL,
.num_conn = 0,
.conn = NULL,
.num_param = 0,
.param = NULL,
.num_inst_var = 0,
.inst_var = NULL,
#endif
},
.DEVparam = VDMOSparam,
.DEVmodParam = VDMOSmParam,
.DEVload = VDMOSload,
.DEVsetup = VDMOSsetup,
.DEVunsetup = VDMOSunsetup,
.DEVpzSetup = VDMOSsetup,
.DEVtemperature = VDMOStemp,
.DEVtrunc = VDMOStrunc,
.DEVfindBranch = NULL,
.DEVacLoad = VDMOSacLoad,
.DEVaccept = NULL,
.DEVdestroy = NULL,
.DEVmodDelete = NULL,
.DEVdelete = VDMOSdelete,
.DEVsetic = VDMOSgetic,
.DEVask = VDMOSask,
.DEVmodAsk = VDMOSmAsk,
.DEVpzLoad = VDMOSpzLoad,
.DEVconvTest = VDMOSconvTest,
.DEVsenSetup = VDMOSsSetup,
.DEVsenLoad = VDMOSsLoad,
.DEVsenUpdate = VDMOSsUpdate,
.DEVsenAcLoad = VDMOSsAcLoad,
.DEVsenPrint = VDMOSsPrint,
.DEVsenTrunc = NULL,
.DEVdisto = VDMOSdisto,
.DEVnoise = VDMOSnoise,
.DEVsoaCheck = NULL,
.DEVinstSize = &VDMOSiSize,
.DEVmodSize = &VDMOSmSize,
#ifdef CIDER
.DEVdump = NULL,
.DEVacct = NULL,
#endif
};
SPICEdev *
get_vdmos_info(void)
{
return &VDMOSinfo;
}

13
src/spicelib/devices/vdmos/vdmosinit.h
View File

@ -0,0 +1,13 @@
#ifndef _VDMOSINIT_H
#define _VDMOSINIT_H
extern IFparm VDMOSpTable[ ];
extern IFparm VDMOSmPTable[ ];
extern char *VDMOSnames[ ];
extern int VDMOSpTSize;
extern int VDMOSmPTSize;
extern int VDMOSnSize;
extern int VDMOSiSize;
extern int VDMOSmSize;
#endif

9
src/spicelib/devices/vdmos/vdmositf.h
View File

@ -0,0 +1,9 @@
/**********
Copyright 1990 Regents of the University of California. All rights reserved.
**********/
#ifndef DEV_VDMOS
#define DEV_VDMOS
extern SPICEdev *get_vdmos_info(void);
#endif

940
src/spicelib/devices/vdmos/vdmosload.c
View File

@ -0,0 +1,940 @@
/**********
Copyright 1990 Regents of the University of California. All rights reserved.
Author: 1985 Thomas L. Quarles
Modified: 2000 AlansFixes
**********/
#include "ngspice/ngspice.h"
#include "ngspice/cktdefs.h"
#include "ngspice/devdefs.h"
#include "vdmosdefs.h"
#include "ngspice/trandefs.h"
#include "ngspice/const.h"
#include "ngspice/sperror.h"
#include "ngspice/suffix.h"
int
VDMOSload(GENmodel *inModel, CKTcircuit *ckt)
/* actually load the current value into the
* sparse matrix previously provided
*/
{
VDMOSmodel *model = (VDMOSmodel *) inModel;
VDMOSinstance *here;
double Beta;
double DrainSatCur;
double EffectiveLength;
double GateBulkOverlapCap;
double GateDrainOverlapCap;
double GateSourceOverlapCap;
double OxideCap;
double SourceSatCur;
double arg;
double cbhat;
double cdhat;
double cdrain;
double cdreq;
double ceq;
double ceqbd;
double ceqbs;
double ceqgb;
double ceqgd;
double ceqgs;
double delvbd;
double delvbs;
double delvds;
double delvgd;
double delvgs;
double evbd;
double evbs;
double gcgb;
double gcgd;
double gcgs;
double geq;
double sarg;
double sargsw;
double vbd;
double vbs;
double vds;
double vdsat;
double vgb1;
double vgb;
double vgd1;
double vgd;
double vgdo;
double vgs1;
double vgs;
double von;
double vt;
#ifndef PREDICTOR
double xfact = 0.0;
#endif
int xnrm;
int xrev;
double capgs = 0.0; /* total gate-source capacitance */
double capgd = 0.0; /* total gate-drain capacitance */
double capgb = 0.0; /* total gate-bulk capacitance */
int Check;
#ifndef NOBYPASS
double tempv;
#endif /*NOBYPASS*/
int error;
#ifdef CAPBYPASS
int senflag;
#endif /*CAPBYPASS*/
int SenCond;
#ifdef CAPBYPASS
senflag = 0;
if(ckt->CKTsenInfo && ckt->CKTsenInfo->SENstatus == PERTURBATION &&
(ckt->CKTsenInfo->SENmode & (ACSEN | TRANSEN))) {
senflag = 1;
}
#endif /* CAPBYPASS */
/* loop through all the VDMOS device models */
for( ; model != NULL; model = VDMOSnextModel(model)) {
/* loop through all the instances of the model */
for (here = VDMOSinstances(model); here != NULL ;
here=VDMOSnextInstance(here)) {
vt = CONSTKoverQ * here->VDMOStemp;
Check=1;
if(ckt->CKTsenInfo){
#ifdef SENSDEBUG
printf("VDMOSload \n");
#endif /* SENSDEBUG */
if((ckt->CKTsenInfo->SENstatus == PERTURBATION)&&
(here->VDMOSsenPertFlag == OFF))continue;
}
SenCond = ckt->CKTsenInfo && here->VDMOSsenPertFlag;
/*
*/
/* first, we compute a few useful values - these could be
* pre-computed, but for historical reasons are still done
* here. They may be moved at the expense of instance size
*/
EffectiveLength=here->VDMOSl - 2*model->VDMOSlatDiff;
if( (here->VDMOStSatCurDens == 0) ||
(here->VDMOSdrainArea == 0) ||
(here->VDMOSsourceArea == 0)) {
DrainSatCur = here->VDMOSm * here->VDMOStSatCur;
SourceSatCur = here->VDMOSm * here->VDMOStSatCur;
} else {
DrainSatCur = here->VDMOStSatCurDens *
here->VDMOSm * here->VDMOSdrainArea;
SourceSatCur = here->VDMOStSatCurDens *
here->VDMOSm * here->VDMOSsourceArea;
}
GateSourceOverlapCap = model->VDMOSgateSourceOverlapCapFactor *
here->VDMOSm * here->VDMOSw;
GateDrainOverlapCap = model->VDMOSgateDrainOverlapCapFactor *
here->VDMOSm * here->VDMOSw;
GateBulkOverlapCap = model->VDMOSgateBulkOverlapCapFactor *
here->VDMOSm * EffectiveLength;
Beta = here->VDMOStTransconductance * here->VDMOSm *
here->VDMOSw/EffectiveLength;
OxideCap = model->VDMOSoxideCapFactor * EffectiveLength *
here->VDMOSm * here->VDMOSw;
/*
* ok - now to do the start-up operations
*
* we must get values for vbs, vds, and vgs from somewhere
* so we either predict them or recover them from last iteration
* These are the two most common cases - either a prediction
* step or the general iteration step and they
* share some code, so we put them first - others later on
*/
if(SenCond){
#ifdef SENSDEBUG
printf("VDMOSsenPertFlag = ON \n");
#endif /* SENSDEBUG */
if((ckt->CKTsenInfo->SENmode == TRANSEN) &&
(ckt->CKTmode & MODEINITTRAN)) {
vgs = *(ckt->CKTstate1 + here->VDMOSvgs);
vds = *(ckt->CKTstate1 + here->VDMOSvds);
vbs = *(ckt->CKTstate1 + here->VDMOSvbs);
vbd = *(ckt->CKTstate1 + here->VDMOSvbd);
vgb = vgs - vbs;
vgd = vgs - vds;
}
else if (ckt->CKTsenInfo->SENmode == ACSEN){
vgb = model->VDMOStype * (
*(ckt->CKTrhsOp+here->VDMOSgNode) -
*(ckt->CKTrhsOp+here->VDMOSbNode));
vbs = *(ckt->CKTstate0 + here->VDMOSvbs);
vbd = *(ckt->CKTstate0 + here->VDMOSvbd);
vgd = vgb + vbd ;
vgs = vgb + vbs ;
vds = vbs - vbd ;
}
else{
vgs = *(ckt->CKTstate0 + here->VDMOSvgs);
vds = *(ckt->CKTstate0 + here->VDMOSvds);
vbs = *(ckt->CKTstate0 + here->VDMOSvbs);
vbd = *(ckt->CKTstate0 + here->VDMOSvbd);
vgb = vgs - vbs;
vgd = vgs - vds;
}
#ifdef SENSDEBUG
printf(" vbs = %.7e ,vbd = %.7e,vgb = %.7e\n",vbs,vbd,vgb);
printf(" vgs = %.7e ,vds = %.7e,vgd = %.7e\n",vgs,vds,vgd);
#endif /* SENSDEBUG */
goto next1;
}
if((ckt->CKTmode & (MODEINITFLOAT | MODEINITPRED | MODEINITSMSIG
| MODEINITTRAN)) ||
( (ckt->CKTmode & MODEINITFIX) && (!here->VDMOSoff) ) ) {
#ifndef PREDICTOR
if(ckt->CKTmode & (MODEINITPRED | MODEINITTRAN) ) {
/* predictor step */
xfact=ckt->CKTdelta/ckt->CKTdeltaOld[1];
*(ckt->CKTstate0 + here->VDMOSvbs) =
*(ckt->CKTstate1 + here->VDMOSvbs);
vbs = (1+xfact)* (*(ckt->CKTstate1 + here->VDMOSvbs))
-(xfact * (*(ckt->CKTstate2 + here->VDMOSvbs)));
*(ckt->CKTstate0 + here->VDMOSvgs) =
*(ckt->CKTstate1 + here->VDMOSvgs);
vgs = (1+xfact)* (*(ckt->CKTstate1 + here->VDMOSvgs))
-(xfact * (*(ckt->CKTstate2 + here->VDMOSvgs)));
*(ckt->CKTstate0 + here->VDMOSvds) =
*(ckt->CKTstate1 + here->VDMOSvds);
vds = (1+xfact)* (*(ckt->CKTstate1 + here->VDMOSvds))
-(xfact * (*(ckt->CKTstate2 + here->VDMOSvds)));
*(ckt->CKTstate0 + here->VDMOSvbd) =
*(ckt->CKTstate0 + here->VDMOSvbs)-
*(ckt->CKTstate0 + here->VDMOSvds);
} else {
#endif /* PREDICTOR */
/* general iteration */
vbs = model->VDMOStype * (
*(ckt->CKTrhsOld+here->VDMOSbNode) -
*(ckt->CKTrhsOld+here->VDMOSsNodePrime));
vgs = model->VDMOStype * (
*(ckt->CKTrhsOld+here->VDMOSgNode) -
*(ckt->CKTrhsOld+here->VDMOSsNodePrime));
vds = model->VDMOStype * (
*(ckt->CKTrhsOld+here->VDMOSdNodePrime) -
*(ckt->CKTrhsOld+here->VDMOSsNodePrime));
#ifndef PREDICTOR
}
#endif /* PREDICTOR */
/* now some common crunching for some more useful quantities */
vbd=vbs-vds;
vgd=vgs-vds;
vgdo = *(ckt->CKTstate0 + here->VDMOSvgs) -
*(ckt->CKTstate0 + here->VDMOSvds);
delvbs = vbs - *(ckt->CKTstate0 + here->VDMOSvbs);
delvbd = vbd - *(ckt->CKTstate0 + here->VDMOSvbd);
delvgs = vgs - *(ckt->CKTstate0 + here->VDMOSvgs);
delvds = vds - *(ckt->CKTstate0 + here->VDMOSvds);
delvgd = vgd-vgdo;
/* these are needed for convergence testing */
if (here->VDMOSmode >= 0) {
cdhat=
here->VDMOScd-
here->VDMOSgbd * delvbd +
here->VDMOSgmbs * delvbs +
here->VDMOSgm * delvgs +
here->VDMOSgds * delvds ;
} else {
cdhat=
here->VDMOScd -
( here->VDMOSgbd -
here->VDMOSgmbs) * delvbd -
here->VDMOSgm * delvgd +
here->VDMOSgds * delvds ;
}
cbhat=
here->VDMOScbs +
here->VDMOScbd +
here->VDMOSgbd * delvbd +
here->VDMOSgbs * delvbs ;
/*
*/
#ifndef NOBYPASS
/* now lets see if we can bypass (ugh) */
tempv = (MAX(fabs(cbhat),
fabs(here->VDMOScbs + here->VDMOScbd)) +
ckt->CKTabstol);
if ((!(ckt->CKTmode &
(MODEINITPRED|MODEINITTRAN|MODEINITSMSIG))) &&
(ckt->CKTbypass) &&
(fabs(cbhat-(here->VDMOScbs +
here->VDMOScbd)) < ckt->CKTreltol * tempv) &&
(fabs(delvbs) < (ckt->CKTreltol *
MAX(fabs(vbs),
fabs( *(ckt->CKTstate0 +
here->VDMOSvbs))) +
ckt->CKTvoltTol)) &&
(fabs(delvbd) < (ckt->CKTreltol *
MAX(fabs(vbd),
fabs(*(ckt->CKTstate0 +
here->VDMOSvbd))) +
ckt->CKTvoltTol)) &&
(fabs(delvgs) < (ckt->CKTreltol *
MAX(fabs(vgs),
fabs(*(ckt->CKTstate0 +
here->VDMOSvgs)))+
ckt->CKTvoltTol)) &&
(fabs(delvds) < (ckt->CKTreltol *
MAX(fabs(vds),
fabs(*(ckt->CKTstate0 +
here->VDMOSvds))) +
ckt->CKTvoltTol)) &&
(fabs(cdhat- here->VDMOScd) < (ckt->CKTreltol *
MAX(fabs(cdhat),
fabs(here->VDMOScd)) +
ckt->CKTabstol))) {
/* bypass code */
/* nothing interesting has changed since last
* iteration on this device, so we just
* copy all the values computed last iteration out
* and keep going
*/
vbs = *(ckt->CKTstate0 + here->VDMOSvbs);
vbd = *(ckt->CKTstate0 + here->VDMOSvbd);
vgs = *(ckt->CKTstate0 + here->VDMOSvgs);
vds = *(ckt->CKTstate0 + here->VDMOSvds);
vgd = vgs - vds;
vgb = vgs - vbs;
cdrain = here->VDMOSmode * (here->VDMOScd + here->VDMOScbd);
if(ckt->CKTmode & (MODETRAN | MODETRANOP)) {
capgs = ( *(ckt->CKTstate0+here->VDMOScapgs)+
*(ckt->CKTstate1+here->VDMOScapgs) +
GateSourceOverlapCap );
capgd = ( *(ckt->CKTstate0+here->VDMOScapgd)+
*(ckt->CKTstate1+here->VDMOScapgd) +
GateDrainOverlapCap );
capgb = ( *(ckt->CKTstate0+here->VDMOScapgb)+
*(ckt->CKTstate1+here->VDMOScapgb) +
GateBulkOverlapCap );
if(ckt->CKTsenInfo){
here->VDMOScgs = capgs;
here->VDMOScgd = capgd;
here->VDMOScgb = capgb;
}
}
goto bypass;
}
#endif /*NOBYPASS*/
/*
*/
/* ok - bypass is out, do it the hard way */
von = model->VDMOStype * here->VDMOSvon;
#ifndef NODELIMITING
/*
* limiting
* we want to keep device voltages from changing
* so fast that the exponentials churn out overflows
* and similar rudeness
*/
if(*(ckt->CKTstate0 + here->VDMOSvds) >=0) {
vgs = DEVfetlim(vgs,*(ckt->CKTstate0 + here->VDMOSvgs)
,von);
vds = vgs - vgd;
vds = DEVlimvds(vds,*(ckt->CKTstate0 + here->VDMOSvds));
vgd = vgs - vds;
} else {
vgd = DEVfetlim(vgd,vgdo,von);
vds = vgs - vgd;
if(!(ckt->CKTfixLimit)) {
vds = -DEVlimvds(-vds,-(*(ckt->CKTstate0 +
here->VDMOSvds)));
}
vgs = vgd + vds;
}
if(vds >= 0) {
vbs = DEVpnjlim(vbs,*(ckt->CKTstate0 + here->VDMOSvbs),
vt,here->VDMOSsourceVcrit,&Check);
vbd = vbs-vds;
} else {
vbd = DEVpnjlim(vbd,*(ckt->CKTstate0 + here->VDMOSvbd),
vt,here->VDMOSdrainVcrit,&Check);
vbs = vbd + vds;
}
#endif /*NODELIMITING*/
/*
*/
} else {
/* ok - not one of the simple cases, so we have to
* look at all of the possibilities for why we were
* called. We still just initialize the three voltages
*/
if((ckt->CKTmode & MODEINITJCT) && !here->VDMOSoff) {
vds= model->VDMOStype * here->VDMOSicVDS;
vgs= model->VDMOStype * here->VDMOSicVGS;
vbs= model->VDMOStype * here->VDMOSicVBS;
if((vds==0) && (vgs==0) && (vbs==0) &&
((ckt->CKTmode &
(MODETRAN|MODEDCOP|MODEDCTRANCURVE)) ||
(!(ckt->CKTmode & MODEUIC)))) {
vbs = -1;
vgs = model->VDMOStype * here->VDMOStVto;
vds = 0;
}
} else {
vbs=vgs=vds=0;
}
}
/*
*/
/*
* now all the preliminaries are over - we can start doing the
* real work
*/
vbd = vbs - vds;
vgd = vgs - vds;
vgb = vgs - vbs;
/*
* bulk-source and bulk-drain diodes
* here we just evaluate the ideal diode current and the
* corresponding derivative (conductance).
*/
next1: if(vbs <= -3*vt) {
here->VDMOSgbs = ckt->CKTgmin;
here->VDMOScbs = here->VDMOSgbs*vbs-SourceSatCur;
} else {
evbs = exp(MIN(MAX_EXP_ARG,vbs/vt));
here->VDMOSgbs = SourceSatCur*evbs/vt + ckt->CKTgmin;
here->VDMOScbs = SourceSatCur*(evbs-1) + ckt->CKTgmin*vbs;
}
if(vbd <= -3*vt) {
here->VDMOSgbd = ckt->CKTgmin;
here->VDMOScbd = here->VDMOSgbd*vbd-DrainSatCur;
} else {
evbd = exp(MIN(MAX_EXP_ARG,vbd/vt));
here->VDMOSgbd = DrainSatCur*evbd/vt + ckt->CKTgmin;
here->VDMOScbd = DrainSatCur*(evbd-1) + ckt->CKTgmin*vbd;
}
/* now to determine whether the user was able to correctly
* identify the source and drain of his device
*/
if(vds >= 0) {
/* normal mode */
here->VDMOSmode = 1;
} else {
/* inverse mode */
here->VDMOSmode = -1;
}
/*
*/
{
/*
* this block of code evaluates the drain current and its
* derivatives using the shichman-hodges model and the
* charges associated with the gate, channel and bulk for
* mosfets
*
*/
/* the following 4 variables are local to this code block until
* it is obvious that they can be made global
*/
double arg;
double betap;
double sarg;
double vgst;
if ((here->VDMOSmode==1?vbs:vbd) <= 0 ) {
sarg=sqrt(here->VDMOStPhi-(here->VDMOSmode==1?vbs:vbd));
} else {
sarg=sqrt(here->VDMOStPhi);
sarg=sarg-(here->VDMOSmode==1?vbs:vbd)/(sarg+sarg);
sarg=MAX(0,sarg);
}
von=(here->VDMOStVbi*model->VDMOStype)+model->VDMOSgamma*sarg;
vgst=(here->VDMOSmode==1?vgs:vgd)-von;
vdsat=MAX(vgst,0);
if (sarg <= 0) {
arg=0;
} else {
arg=model->VDMOSgamma/(sarg+sarg);
}
if (vgst <= 0) {
/*
* cutoff region
*/
cdrain=0;
here->VDMOSgm=0;
here->VDMOSgds=0;
here->VDMOSgmbs=0;
} else{
/*
* saturation region
*/
betap=Beta*(1+model->VDMOSlambda*(vds*here->VDMOSmode));
if (vgst <= (vds*here->VDMOSmode)){
cdrain=betap*vgst*vgst*.5;
here->VDMOSgm=betap*vgst;
here->VDMOSgds=model->VDMOSlambda*Beta*vgst*vgst*.5;
here->VDMOSgmbs=here->VDMOSgm*arg;
} else {
/*
* linear region
*/
cdrain=betap*(vds*here->VDMOSmode)*
(vgst-.5*(vds*here->VDMOSmode));
here->VDMOSgm=betap*(vds*here->VDMOSmode);
here->VDMOSgds=betap*(vgst-(vds*here->VDMOSmode))+
model->VDMOSlambda*Beta*
(vds*here->VDMOSmode)*
(vgst-.5*(vds*here->VDMOSmode));
here->VDMOSgmbs=here->VDMOSgm*arg;
}
}
/*
* finished
*/
}
/*
*/
/* now deal with n vs p polarity */
here->VDMOSvon = model->VDMOStype * von;
here->VDMOSvdsat = model->VDMOStype * vdsat;
/* line 490 */
/*
* COMPUTE EQUIVALENT DRAIN CURRENT SOURCE
*/
here->VDMOScd=here->VDMOSmode * cdrain - here->VDMOScbd;
if (ckt->CKTmode & (MODETRAN | MODETRANOP | MODEINITSMSIG)) {
/*
* now we do the hard part of the bulk-drain and bulk-source
* diode - we evaluate the non-linear capacitance and
* charge
*
* the basic equations are not hard, but the implementation
* is somewhat long in an attempt to avoid log/exponential
* evaluations
*/
/*
* charge storage elements
*
*.. bulk-drain and bulk-source depletion capacitances
*/
#ifdef CAPBYPASS
if(((ckt->CKTmode & (MODEINITPRED | MODEINITTRAN) ) ||
fabs(delvbs) >= ckt->CKTreltol * MAX(fabs(vbs),
fabs(*(ckt->CKTstate0+here->VDMOSvbs)))+
ckt->CKTvoltTol)|| senflag)
#endif /*CAPBYPASS*/
{
/* can't bypass the diode capacitance calculations */
if(here->VDMOSCbs != 0 || here->VDMOSCbssw != 0 ) {
if (vbs < here->VDMOStDepCap){
arg=1-vbs/here->VDMOStBulkPot;
/*
* the following block looks somewhat long and messy,
* but since most users use the default grading
* coefficients of .5, and sqrt is MUCH faster than an
* exp(log()) we use this special case code to buy time.
* (as much as 10% of total job time!)
*/
if(model->VDMOSbulkJctBotGradingCoeff ==
model->VDMOSbulkJctSideGradingCoeff) {
if(model->VDMOSbulkJctBotGradingCoeff == .5) {
sarg = sargsw = 1/sqrt(arg);
} else {
sarg = sargsw =
exp(-model->VDMOSbulkJctBotGradingCoeff*
log(arg));
}
} else {
if(model->VDMOSbulkJctBotGradingCoeff == .5) {
sarg = 1/sqrt(arg);
} else {
sarg = exp(-model->VDMOSbulkJctBotGradingCoeff*
log(arg));
}
if(model->VDMOSbulkJctSideGradingCoeff == .5) {
sargsw = 1/sqrt(arg);
} else {
sargsw =exp(-model->VDMOSbulkJctSideGradingCoeff*
log(arg));
}
}
*(ckt->CKTstate0 + here->VDMOSqbs) =
here->VDMOStBulkPot*(here->VDMOSCbs*
(1-arg*sarg)/(1-model->VDMOSbulkJctBotGradingCoeff)
+here->VDMOSCbssw*
(1-arg*sargsw)/
(1-model->VDMOSbulkJctSideGradingCoeff));
here->VDMOScapbs=here->VDMOSCbs*sarg+
here->VDMOSCbssw*sargsw;
} else {
*(ckt->CKTstate0 + here->VDMOSqbs) = here->VDMOSf4s +
vbs*(here->VDMOSf2s+vbs*(here->VDMOSf3s/2));
here->VDMOScapbs=here->VDMOSf2s+here->VDMOSf3s*vbs;
}
} else {
*(ckt->CKTstate0 + here->VDMOSqbs) = 0;
here->VDMOScapbs=0;
}
}
#ifdef CAPBYPASS
if(((ckt->CKTmode & (MODEINITPRED | MODEINITTRAN) ) ||
fabs(delvbd) >= ckt->CKTreltol * MAX(fabs(vbd),
fabs(*(ckt->CKTstate0+here->VDMOSvbd)))+
ckt->CKTvoltTol)|| senflag)
#endif /*CAPBYPASS*/
/* can't bypass the diode capacitance calculations */
{
if(here->VDMOSCbd != 0 || here->VDMOSCbdsw != 0 ) {
if (vbd < here->VDMOStDepCap) {
arg=1-vbd/here->VDMOStBulkPot;
/*
* the following block looks somewhat long and messy,
* but since most users use the default grading
* coefficients of .5, and sqrt is MUCH faster than an
* exp(log()) we use this special case code to buy time.
* (as much as 10% of total job time!)
*/
if(model->VDMOSbulkJctBotGradingCoeff == .5 &&
model->VDMOSbulkJctSideGradingCoeff == .5) {
sarg = sargsw = 1/sqrt(arg);
} else {
if(model->VDMOSbulkJctBotGradingCoeff == .5) {
sarg = 1/sqrt(arg);
} else {
sarg = exp(-model->VDMOSbulkJctBotGradingCoeff*
log(arg));
}
if(model->VDMOSbulkJctSideGradingCoeff == .5) {
sargsw = 1/sqrt(arg);
} else {
sargsw =exp(-model->VDMOSbulkJctSideGradingCoeff*
log(arg));
}
}
*(ckt->CKTstate0 + here->VDMOSqbd) =
here->VDMOStBulkPot*(here->VDMOSCbd*
(1-arg*sarg)
/(1-model->VDMOSbulkJctBotGradingCoeff)
+here->VDMOSCbdsw*
(1-arg*sargsw)
/(1-model->VDMOSbulkJctSideGradingCoeff));
here->VDMOScapbd=here->VDMOSCbd*sarg+
here->VDMOSCbdsw*sargsw;
} else {
*(ckt->CKTstate0 + here->VDMOSqbd) = here->VDMOSf4d +
vbd * (here->VDMOSf2d + vbd * here->VDMOSf3d/2);
here->VDMOScapbd=here->VDMOSf2d + vbd * here->VDMOSf3d;
}
} else {
*(ckt->CKTstate0 + here->VDMOSqbd) = 0;
here->VDMOScapbd = 0;
}
}
/*
*/
if(SenCond && (ckt->CKTsenInfo->SENmode==TRANSEN)) goto next2;
if ( (ckt->CKTmode & MODETRAN) || ( (ckt->CKTmode&MODEINITTRAN)
&& !(ckt->CKTmode&MODEUIC)) ) {
/* (above only excludes tranop, since we're only at this
* point if tran or tranop )
*/
/*
* calculate equivalent conductances and currents for
* depletion capacitors
*/
/* integrate the capacitors and save results */
error = NIintegrate(ckt,&geq,&ceq,here->VDMOScapbd,
here->VDMOSqbd);
if(error) return(error);
here->VDMOSgbd += geq;
here->VDMOScbd += *(ckt->CKTstate0 + here->VDMOScqbd);
here->VDMOScd -= *(ckt->CKTstate0 + here->VDMOScqbd);
error = NIintegrate(ckt,&geq,&ceq,here->VDMOScapbs,
here->VDMOSqbs);
if(error) return(error);
here->VDMOSgbs += geq;
here->VDMOScbs += *(ckt->CKTstate0 + here->VDMOScqbs);
}
}
/*
*/
if(SenCond) goto next2;
/*
* check convergence
*/
if ( (here->VDMOSoff == 0) ||
(!(ckt->CKTmode & (MODEINITFIX|MODEINITSMSIG))) ){
if (Check == 1) {
ckt->CKTnoncon++;
ckt->CKTtroubleElt = (GENinstance *) here;
}
}
/*
*/
/* save things away for next time */
next2: *(ckt->CKTstate0 + here->VDMOSvbs) = vbs;
*(ckt->CKTstate0 + here->VDMOSvbd) = vbd;
*(ckt->CKTstate0 + here->VDMOSvgs) = vgs;
*(ckt->CKTstate0 + here->VDMOSvds) = vds;
/*
*/
/*
* meyer's capacitor model
*/
if ( ckt->CKTmode & (MODETRAN | MODETRANOP | MODEINITSMSIG) ) {
/*
* calculate meyer's capacitors
*/
/*
* new cmeyer - this just evaluates at the current time,
* expects you to remember values from previous time
* returns 1/2 of non-constant portion of capacitance
* you must add in the other half from previous time
* and the constant part
*/
if (here->VDMOSmode > 0){
DEVqmeyer (vgs,vgd,vgb,von,vdsat,
(ckt->CKTstate0 + here->VDMOScapgs),
(ckt->CKTstate0 + here->VDMOScapgd),
(ckt->CKTstate0 + here->VDMOScapgb),
here->VDMOStPhi,OxideCap);
} else {
DEVqmeyer (vgd,vgs,vgb,von,vdsat,
(ckt->CKTstate0 + here->VDMOScapgd),
(ckt->CKTstate0 + here->VDMOScapgs),
(ckt->CKTstate0 + here->VDMOScapgb),
here->VDMOStPhi,OxideCap);
}
vgs1 = *(ckt->CKTstate1 + here->VDMOSvgs);
vgd1 = vgs1 - *(ckt->CKTstate1 + here->VDMOSvds);
vgb1 = vgs1 - *(ckt->CKTstate1 + here->VDMOSvbs);
if(ckt->CKTmode & (MODETRANOP|MODEINITSMSIG)) {
capgs = 2 * *(ckt->CKTstate0+here->VDMOScapgs)+
GateSourceOverlapCap ;
capgd = 2 * *(ckt->CKTstate0+here->VDMOScapgd)+
GateDrainOverlapCap ;
capgb = 2 * *(ckt->CKTstate0+here->VDMOScapgb)+
GateBulkOverlapCap ;
} else {
capgs = ( *(ckt->CKTstate0+here->VDMOScapgs)+
*(ckt->CKTstate1+here->VDMOScapgs) +
GateSourceOverlapCap );
capgd = ( *(ckt->CKTstate0+here->VDMOScapgd)+
*(ckt->CKTstate1+here->VDMOScapgd) +
GateDrainOverlapCap );
capgb = ( *(ckt->CKTstate0+here->VDMOScapgb)+
*(ckt->CKTstate1+here->VDMOScapgb) +
GateBulkOverlapCap );
}
if(ckt->CKTsenInfo){
here->VDMOScgs = capgs;
here->VDMOScgd = capgd;
here->VDMOScgb = capgb;
}
/*
*/
/*
* store small-signal parameters (for meyer's model)
* all parameters already stored, so done...
*/
if(SenCond){
if((ckt->CKTsenInfo->SENmode == DCSEN)||
(ckt->CKTsenInfo->SENmode == ACSEN)){
continue;
}
}
#ifndef PREDICTOR
if (ckt->CKTmode & (MODEINITPRED | MODEINITTRAN) ) {
*(ckt->CKTstate0 + here->VDMOSqgs) =
(1+xfact) * *(ckt->CKTstate1 + here->VDMOSqgs)
- xfact * *(ckt->CKTstate2 + here->VDMOSqgs);
*(ckt->CKTstate0 + here->VDMOSqgd) =
(1+xfact) * *(ckt->CKTstate1 + here->VDMOSqgd)
- xfact * *(ckt->CKTstate2 + here->VDMOSqgd);
*(ckt->CKTstate0 + here->VDMOSqgb) =
(1+xfact) * *(ckt->CKTstate1 + here->VDMOSqgb)
- xfact * *(ckt->CKTstate2 + here->VDMOSqgb);
} else {
#endif /*PREDICTOR*/
if(ckt->CKTmode & MODETRAN) {
*(ckt->CKTstate0 + here->VDMOSqgs) = (vgs-vgs1)*capgs +
*(ckt->CKTstate1 + here->VDMOSqgs) ;
*(ckt->CKTstate0 + here->VDMOSqgd) = (vgd-vgd1)*capgd +
*(ckt->CKTstate1 + here->VDMOSqgd) ;
*(ckt->CKTstate0 + here->VDMOSqgb) = (vgb-vgb1)*capgb +
*(ckt->CKTstate1 + here->VDMOSqgb) ;
} else {
/* TRANOP only */
*(ckt->CKTstate0 + here->VDMOSqgs) = vgs*capgs;
*(ckt->CKTstate0 + here->VDMOSqgd) = vgd*capgd;
*(ckt->CKTstate0 + here->VDMOSqgb) = vgb*capgb;
}
#ifndef PREDICTOR
}
#endif /*PREDICTOR*/
}
#ifndef NOBYPASS
bypass:
#endif
if(SenCond) continue;
if ( (ckt->CKTmode & (MODEINITTRAN)) ||
(! (ckt->CKTmode & (MODETRAN)) ) ) {
/*
* initialize to zero charge conductances
* and current
*/
gcgs=0;
ceqgs=0;
gcgd=0;
ceqgd=0;
gcgb=0;
ceqgb=0;
} else {
if(capgs == 0) *(ckt->CKTstate0 + here->VDMOScqgs) =0;
if(capgd == 0) *(ckt->CKTstate0 + here->VDMOScqgd) =0;
if(capgb == 0) *(ckt->CKTstate0 + here->VDMOScqgb) =0;
/*
* calculate equivalent conductances and currents for
* meyer"s capacitors
*/
error = NIintegrate(ckt,&gcgs,&ceqgs,capgs,here->VDMOSqgs);
if(error) return(error);
error = NIintegrate(ckt,&gcgd,&ceqgd,capgd,here->VDMOSqgd);
if(error) return(error);
error = NIintegrate(ckt,&gcgb,&ceqgb,capgb,here->VDMOSqgb);
if(error) return(error);
ceqgs=ceqgs-gcgs*vgs+ckt->CKTag[0]*
*(ckt->CKTstate0 + here->VDMOSqgs);
ceqgd=ceqgd-gcgd*vgd+ckt->CKTag[0]*
*(ckt->CKTstate0 + here->VDMOSqgd);
ceqgb=ceqgb-gcgb*vgb+ckt->CKTag[0]*
*(ckt->CKTstate0 + here->VDMOSqgb);
}
/*
* store charge storage info for meyer's cap in lx table
*/
/*
* load current vector
*/
ceqbs = model->VDMOStype *
(here->VDMOScbs-(here->VDMOSgbs)*vbs);
ceqbd = model->VDMOStype *
(here->VDMOScbd-(here->VDMOSgbd)*vbd);
if (here->VDMOSmode >= 0) {
xnrm=1;
xrev=0;
cdreq=model->VDMOStype*(cdrain-here->VDMOSgds*vds-
here->VDMOSgm*vgs-here->VDMOSgmbs*vbs);
} else {
xnrm=0;
xrev=1;
cdreq = -(model->VDMOStype)*(cdrain-here->VDMOSgds*(-vds)-
here->VDMOSgm*vgd-here->VDMOSgmbs*vbd);
}
*(ckt->CKTrhs + here->VDMOSgNode) -=
(model->VDMOStype * (ceqgs + ceqgb + ceqgd));
*(ckt->CKTrhs + here->VDMOSbNode) -=
(ceqbs + ceqbd - model->VDMOStype * ceqgb);
*(ckt->CKTrhs + here->VDMOSdNodePrime) +=
(ceqbd - cdreq + model->VDMOStype * ceqgd);
*(ckt->CKTrhs + here->VDMOSsNodePrime) +=
cdreq + ceqbs + model->VDMOStype * ceqgs;
/*
* load y matrix
*/
*(here->VDMOSDdPtr) += (here->VDMOSdrainConductance);
*(here->VDMOSGgPtr) += ((gcgd+gcgs+gcgb));
*(here->VDMOSSsPtr) += (here->VDMOSsourceConductance);
*(here->VDMOSBbPtr) += (here->VDMOSgbd+here->VDMOSgbs+gcgb);
*(here->VDMOSDPdpPtr) +=
(here->VDMOSdrainConductance+here->VDMOSgds+
here->VDMOSgbd+xrev*(here->VDMOSgm+here->VDMOSgmbs)+gcgd);
*(here->VDMOSSPspPtr) +=
(here->VDMOSsourceConductance+here->VDMOSgds+
here->VDMOSgbs+xnrm*(here->VDMOSgm+here->VDMOSgmbs)+gcgs);
*(here->VDMOSDdpPtr) += (-here->VDMOSdrainConductance);
*(here->VDMOSGbPtr) -= gcgb;
*(here->VDMOSGdpPtr) -= gcgd;
*(here->VDMOSGspPtr) -= gcgs;
*(here->VDMOSSspPtr) += (-here->VDMOSsourceConductance);
*(here->VDMOSBgPtr) -= gcgb;
*(here->VDMOSBdpPtr) -= here->VDMOSgbd;
*(here->VDMOSBspPtr) -= here->VDMOSgbs;
*(here->VDMOSDPdPtr) += (-here->VDMOSdrainConductance);
*(here->VDMOSDPgPtr) += ((xnrm-xrev)*here->VDMOSgm-gcgd);
*(here->VDMOSDPbPtr) += (-here->VDMOSgbd+(xnrm-xrev)*here->VDMOSgmbs);
*(here->VDMOSDPspPtr) += (-here->VDMOSgds-xnrm*
(here->VDMOSgm+here->VDMOSgmbs));
*(here->VDMOSSPgPtr) += (-(xnrm-xrev)*here->VDMOSgm-gcgs);
*(here->VDMOSSPsPtr) += (-here->VDMOSsourceConductance);
*(here->VDMOSSPbPtr) += (-here->VDMOSgbs-(xnrm-xrev)*here->VDMOSgmbs);
*(here->VDMOSSPdpPtr) += (-here->VDMOSgds-xrev*
(here->VDMOSgm+here->VDMOSgmbs));
}
}
return(OK);
}

119
src/spicelib/devices/vdmos/vdmosmask.c
View File

@ -0,0 +1,119 @@
/**********
Copyright 1990 Regents of the University of California. All rights reserved.
Author: 1987 Thomas L. Quarles
**********/
#include "ngspice/ngspice.h"
#include "ngspice/const.h"
#include "ngspice/ifsim.h"
#include "ngspice/cktdefs.h"
#include "ngspice/devdefs.h"
#include "vdmosdefs.h"
#include "ngspice/sperror.h"
#include "ngspice/suffix.h"
/*ARGSUSED*/
int
VDMOSmAsk(CKTcircuit *ckt, GENmodel *inst, int which, IFvalue *value)
{
VDMOSmodel *model = (VDMOSmodel *)inst;
NG_IGNORE(ckt);
switch(which) {
case VDMOS_MOD_TNOM:
value->rValue = model->VDMOStnom-CONSTCtoK;
return(OK);
case VDMOS_MOD_VTO:
value->rValue = model->VDMOSvt0;
return(OK);
case VDMOS_MOD_KP:
value->rValue = model->VDMOStransconductance;
return(OK);
case VDMOS_MOD_GAMMA:
value->rValue = model->VDMOSgamma;
return(OK);
case VDMOS_MOD_PHI:
value->rValue = model->VDMOSphi;
return(OK);
case VDMOS_MOD_LAMBDA:
value->rValue = model->VDMOSlambda;
return(OK);
case VDMOS_MOD_RD:
value->rValue = model->VDMOSdrainResistance;
return(OK);
case VDMOS_MOD_RS:
value->rValue = model->VDMOSsourceResistance;
return(OK);
case VDMOS_MOD_CBD:
value->rValue = model->VDMOScapBD;
return(OK);
case VDMOS_MOD_CBS:
value->rValue = model->VDMOScapBS;
return(OK);
case VDMOS_MOD_IS:
value->rValue = model->VDMOSjctSatCur;
return(OK);
case VDMOS_MOD_PB:
value->rValue = model->VDMOSbulkJctPotential;
return(OK);
case VDMOS_MOD_CGSO:
value->rValue = model->VDMOSgateSourceOverlapCapFactor;
return(OK);
case VDMOS_MOD_CGDO:
value->rValue = model->VDMOSgateDrainOverlapCapFactor;
return(OK);
case VDMOS_MOD_CGBO:
value->rValue = model->VDMOSgateBulkOverlapCapFactor;
return(OK);
case VDMOS_MOD_CJ:
value->rValue = model->VDMOSbulkCapFactor;
return(OK);
case VDMOS_MOD_MJ:
value->rValue = model->VDMOSbulkJctBotGradingCoeff;
return(OK);
case VDMOS_MOD_CJSW:
value->rValue = model->VDMOSsideWallCapFactor;
return(OK);
case VDMOS_MOD_MJSW:
value->rValue = model->VDMOSbulkJctSideGradingCoeff;
return(OK);
case VDMOS_MOD_JS:
value->rValue = model->VDMOSjctSatCurDensity;
return(OK);
case VDMOS_MOD_TOX:
value->rValue = model->VDMOSoxideThickness;
return(OK);
case VDMOS_MOD_LD:
value->rValue = model->VDMOSlatDiff;
return(OK);
case VDMOS_MOD_RSH:
value->rValue = model->VDMOSsheetResistance;
return(OK);
case VDMOS_MOD_U0:
value->rValue = model->VDMOSsurfaceMobility;
return(OK);
case VDMOS_MOD_FC:
value->rValue = model->VDMOSfwdCapDepCoeff;
return(OK);
case VDMOS_MOD_NSUB:
value->rValue = model->VDMOSsubstrateDoping;
return(OK);
case VDMOS_MOD_TPG:
value->iValue = model->VDMOSgateType;
return(OK);
case VDMOS_MOD_NSS:
value->rValue = model->VDMOSsurfaceStateDensity;
return(OK);
case VDMOS_MOD_TYPE:
if (model->VDMOStype > 0)
value->sValue = "nmos";
else
value->sValue = "pmos";
return(OK);
default:
return(E_BADPARM);
}
/* NOTREACHED */
}

154
src/spicelib/devices/vdmos/vdmosmpar.c
View File

@ -0,0 +1,154 @@
/**********
Copyright 1990 Regents of the University of California. All rights reserved.
Author: 1985 Thomas L. Quarles
**********/
#include "ngspice/ngspice.h"
#include "ngspice/const.h"
#include "ngspice/ifsim.h"
#include "vdmosdefs.h"
#include "ngspice/sperror.h"
#include "ngspice/suffix.h"
int
VDMOSmParam(int param, IFvalue *value, GENmodel *inModel)
{
VDMOSmodel *model = (VDMOSmodel *)inModel;
switch(param) {
case VDMOS_MOD_TNOM:
model->VDMOStnom = value->rValue + CONSTCtoK;
model->VDMOStnomGiven = TRUE;
break;
case VDMOS_MOD_VTO:
model->VDMOSvt0 = value->rValue;
model->VDMOSvt0Given = TRUE;
break;
case VDMOS_MOD_KP:
model->VDMOStransconductance = value->rValue;
model->VDMOStransconductanceGiven = TRUE;
break;
case VDMOS_MOD_GAMMA:
model->VDMOSgamma = value->rValue;
model->VDMOSgammaGiven = TRUE;
break;
case VDMOS_MOD_PHI:
model->VDMOSphi = value->rValue;
model->VDMOSphiGiven = TRUE;
break;
case VDMOS_MOD_LAMBDA:
model->VDMOSlambda = value->rValue;
model->VDMOSlambdaGiven = TRUE;
break;
case VDMOS_MOD_RD:
model->VDMOSdrainResistance = value->rValue;
model->VDMOSdrainResistanceGiven = TRUE;
break;
case VDMOS_MOD_RS:
model->VDMOSsourceResistance = value->rValue;
model->VDMOSsourceResistanceGiven = TRUE;
break;
case VDMOS_MOD_CBD:
model->VDMOScapBD = value->rValue;
model->VDMOScapBDGiven = TRUE;
break;
case VDMOS_MOD_CBS:
model->VDMOScapBS = value->rValue;
model->VDMOScapBSGiven = TRUE;
break;
case VDMOS_MOD_IS:
model->VDMOSjctSatCur = value->rValue;
model->VDMOSjctSatCurGiven = TRUE;
break;
case VDMOS_MOD_PB:
model->VDMOSbulkJctPotential = value->rValue;
model->VDMOSbulkJctPotentialGiven = TRUE;
break;
case VDMOS_MOD_CGSO:
model->VDMOSgateSourceOverlapCapFactor = value->rValue;
model->VDMOSgateSourceOverlapCapFactorGiven = TRUE;
break;
case VDMOS_MOD_CGDO:
model->VDMOSgateDrainOverlapCapFactor = value->rValue;
model->VDMOSgateDrainOverlapCapFactorGiven = TRUE;
break;
case VDMOS_MOD_CGBO:
model->VDMOSgateBulkOverlapCapFactor = value->rValue;
model->VDMOSgateBulkOverlapCapFactorGiven = TRUE;
break;
case VDMOS_MOD_CJ:
model->VDMOSbulkCapFactor = value->rValue;
model->VDMOSbulkCapFactorGiven = TRUE;
break;
case VDMOS_MOD_MJ:
model->VDMOSbulkJctBotGradingCoeff = value->rValue;
model->VDMOSbulkJctBotGradingCoeffGiven = TRUE;
break;
case VDMOS_MOD_CJSW:
model->VDMOSsideWallCapFactor = value->rValue;
model->VDMOSsideWallCapFactorGiven = TRUE;
break;
case VDMOS_MOD_MJSW:
model->VDMOSbulkJctSideGradingCoeff = value->rValue;
model->VDMOSbulkJctSideGradingCoeffGiven = TRUE;
break;
case VDMOS_MOD_JS:
model->VDMOSjctSatCurDensity = value->rValue;
model->VDMOSjctSatCurDensityGiven = TRUE;
break;
case VDMOS_MOD_TOX:
model->VDMOSoxideThickness = value->rValue;
model->VDMOSoxideThicknessGiven = TRUE;
break;
case VDMOS_MOD_LD:
model->VDMOSlatDiff = value->rValue;
model->VDMOSlatDiffGiven = TRUE;
break;
case VDMOS_MOD_RSH:
model->VDMOSsheetResistance = value->rValue;
model->VDMOSsheetResistanceGiven = TRUE;
break;
case VDMOS_MOD_U0:
model->VDMOSsurfaceMobility = value->rValue;
model->VDMOSsurfaceMobilityGiven = TRUE;
break;
case VDMOS_MOD_FC:
model->VDMOSfwdCapDepCoeff = value->rValue;
model->VDMOSfwdCapDepCoeffGiven = TRUE;
break;
case VDMOS_MOD_NSS:
model->VDMOSsurfaceStateDensity = value->rValue;
model->VDMOSsurfaceStateDensityGiven = TRUE;
break;
case VDMOS_MOD_NSUB:
model->VDMOSsubstrateDoping = value->rValue;
model->VDMOSsubstrateDopingGiven = TRUE;
break;
case VDMOS_MOD_TPG:
model->VDMOSgateType = value->iValue;
model->VDMOSgateTypeGiven = TRUE;
break;
case VDMOS_MOD_NMOS:
if(value->iValue) {
model->VDMOStype = 1;
model->VDMOStypeGiven = TRUE;
}
break;
case VDMOS_MOD_PMOS:
if(value->iValue) {
model->VDMOStype = -1;
model->VDMOStypeGiven = TRUE;
}
break;
case VDMOS_MOD_KF:
model->VDMOSfNcoef = value->rValue;
model->VDMOSfNcoefGiven = TRUE;
break;
case VDMOS_MOD_AF:
model->VDMOSfNexp = value->rValue;
model->VDMOSfNexpGiven = TRUE;
break;
default:
return(E_BADPARM);
}
return(OK);
}

190
src/spicelib/devices/vdmos/vdmosnoi.c
View File

@ -0,0 +1,190 @@
/**********
Copyright 1990 Regents of the University of California. All rights reserved.
Author: 1987 Gary W. Ng
Modified: 2000 AlansFixes
**********/
#include "ngspice/ngspice.h"
#include "vdmosdefs.h"
#include "ngspice/cktdefs.h"
#include "ngspice/iferrmsg.h"
#include "ngspice/noisedef.h"
#include "ngspice/suffix.h"
/*
* VDMOSnoise (mode, operation, firstModel, ckt, data, OnDens)
* This routine names and evaluates all of the noise sources
* associated with MOSFET's. It starts with the model *firstModel and
* traverses all of its insts. It then proceeds to any other models
* on the linked list. The total output noise density generated by
* all of the MOSFET's is summed with the variable "OnDens".
*/
int
VDMOSnoise (int mode, int operation, GENmodel *genmodel, CKTcircuit *ckt,
Ndata *data, double *OnDens)
{
NOISEAN *job = (NOISEAN *) ckt->CKTcurJob;
VDMOSmodel *firstModel = (VDMOSmodel *) genmodel;
VDMOSmodel *model;
VDMOSinstance *inst;
double coxSquared;
double tempOnoise;
double tempInoise;
double noizDens[VDMOSNSRCS];
double lnNdens[VDMOSNSRCS];
int i;
/* define the names of the noise sources */
static char *VDMOSnNames[VDMOSNSRCS] = { /* Note that we have to keep the order */
"_rd", /* noise due to rd */ /* consistent with thestrchr definitions */
"_rs", /* noise due to rs */ /* in VDMOSdefs.h */
"_id", /* noise due to id */
"_1overf", /* flicker (1/f) noise */
"" /* total transistor noise */
};
for (model=firstModel; model != NULL; model=VDMOSnextModel(model)) {
/* Oxide capacitance can be zero in MOS level 1. Since this will give us problems in our 1/f */
/* noise model, we ASSUME an actual "tox" of 1e-7 */
if (model->VDMOSoxideCapFactor == 0.0) {
coxSquared = 3.9 * 8.854214871e-12 / 1e-7;
} else {
coxSquared = model->VDMOSoxideCapFactor;
}
coxSquared *= coxSquared;
for (inst=VDMOSinstances(model); inst != NULL; inst=VDMOSnextInstance(inst)) {
switch (operation) {
case N_OPEN:
/* see if we have to to produce a summary report */
/* if so, name all the noise generators */
if (job->NStpsSm != 0) {
switch (mode) {
case N_DENS:
for (i=0; i < VDMOSNSRCS; i++) {
NOISE_ADD_OUTVAR(ckt, data, "onoise_%s%s", inst->VDMOSname, VDMOSnNames[i]);
}
break;
case INT_NOIZ:
for (i=0; i < VDMOSNSRCS; i++) {
NOISE_ADD_OUTVAR(ckt, data, "onoise_total_%s%s", inst->VDMOSname, VDMOSnNames[i]);
NOISE_ADD_OUTVAR(ckt, data, "inoise_total_%s%s", inst->VDMOSname, VDMOSnNames[i]);
}
break;
}
}
break;
case N_CALC:
switch (mode) {
case N_DENS:
NevalSrc(&noizDens[VDMOSRDNOIZ],&lnNdens[VDMOSRDNOIZ],
ckt,THERMNOISE,inst->VDMOSdNodePrime,inst->VDMOSdNode,
inst->VDMOSdrainConductance);
NevalSrc(&noizDens[VDMOSRSNOIZ],&lnNdens[VDMOSRSNOIZ],
ckt,THERMNOISE,inst->VDMOSsNodePrime,inst->VDMOSsNode,
inst->VDMOSsourceConductance);
NevalSrc(&noizDens[VDMOSIDNOIZ],&lnNdens[VDMOSIDNOIZ],
ckt,THERMNOISE,inst->VDMOSdNodePrime,inst->VDMOSsNodePrime,
(2.0/3.0 * fabs(inst->VDMOSgm)));
NevalSrc(&noizDens[VDMOSFLNOIZ], NULL, ckt,
N_GAIN,inst->VDMOSdNodePrime, inst->VDMOSsNodePrime,
(double)0.0);
noizDens[VDMOSFLNOIZ] *= model->VDMOSfNcoef *
exp(model->VDMOSfNexp *
log(MAX(fabs(inst->VDMOScd),N_MINLOG))) /
(data->freq * inst->VDMOSw *
inst->VDMOSm *
(inst->VDMOSl - 2*model->VDMOSlatDiff) * coxSquared);
lnNdens[VDMOSFLNOIZ] =
log(MAX(noizDens[VDMOSFLNOIZ],N_MINLOG));
noizDens[VDMOSTOTNOIZ] = noizDens[VDMOSRDNOIZ] +
noizDens[VDMOSRSNOIZ] +
noizDens[VDMOSIDNOIZ] +
noizDens[VDMOSFLNOIZ];
lnNdens[VDMOSTOTNOIZ] =
log(MAX(noizDens[VDMOSTOTNOIZ], N_MINLOG));
*OnDens += noizDens[VDMOSTOTNOIZ];
if (data->delFreq == 0.0) {
/* if we haven't done any previous integration, we need to */
/* initialize our "history" variables */
for (i=0; i < VDMOSNSRCS; i++) {
inst->VDMOSnVar[LNLSTDENS][i] = lnNdens[i];
}
/* clear out our integration variables if it's the first pass */
if (data->freq == job->NstartFreq) {
for (i=0; i < VDMOSNSRCS; i++) {
inst->VDMOSnVar[OUTNOIZ][i] = 0.0;
inst->VDMOSnVar[INNOIZ][i] = 0.0;
}
}
} else { /* data->delFreq != 0.0 (we have to integrate) */
for (i=0; i < VDMOSNSRCS; i++) {
if (i != VDMOSTOTNOIZ) {
tempOnoise = Nintegrate(noizDens[i], lnNdens[i],
inst->VDMOSnVar[LNLSTDENS][i], data);
tempInoise = Nintegrate(noizDens[i] * data->GainSqInv ,
lnNdens[i] + data->lnGainInv,
inst->VDMOSnVar[LNLSTDENS][i] + data->lnGainInv,
data);
inst->VDMOSnVar[LNLSTDENS][i] = lnNdens[i];
data->outNoiz += tempOnoise;
data->inNoise += tempInoise;
if (job->NStpsSm != 0) {
inst->VDMOSnVar[OUTNOIZ][i] += tempOnoise;
inst->VDMOSnVar[OUTNOIZ][VDMOSTOTNOIZ] += tempOnoise;
inst->VDMOSnVar[INNOIZ][i] += tempInoise;
inst->VDMOSnVar[INNOIZ][VDMOSTOTNOIZ] += tempInoise;
}
}
}
}
if (data->prtSummary) {
for (i=0; i < VDMOSNSRCS; i++) { /* print a summary report */
data->outpVector[data->outNumber++] = noizDens[i];
}
}
break;
case INT_NOIZ: /* already calculated, just output */
if (job->NStpsSm != 0) {
for (i=0; i < VDMOSNSRCS; i++) {
data->outpVector[data->outNumber++] = inst->VDMOSnVar[OUTNOIZ][i];
data->outpVector[data->outNumber++] = inst->VDMOSnVar[INNOIZ][i];
}
} /* if */
break;
} /* switch (mode) */
break;
case N_CLOSE:
return (OK); /* do nothing, the main calling routine will close */
break; /* the plots */
} /* switch (operation) */
} /* for inst */
} /* for model */
return(OK);
}

123
src/spicelib/devices/vdmos/vdmospar.c
View File

@ -0,0 +1,123 @@
/**********
Copyright 1990 Regents of the University of California. All rights reserved.
Author: 1985 Thomas L. Quarles
Modified: 2000 AlansFixes
**********/
/*
*/
#include "ngspice/ngspice.h"
#include "ngspice/const.h"
#include "ngspice/ifsim.h"
#include "vdmosdefs.h"
#include "ngspice/sperror.h"
#include "ngspice/suffix.h"
#include "ngspice/fteext.h"
/* ARGSUSED */
int
VDMOSparam(int param, IFvalue *value, GENinstance *inst, IFvalue *select)
{
double scale;
VDMOSinstance *here = (VDMOSinstance *)inst;
NG_IGNORE(select);
if (!cp_getvar("scale", CP_REAL, &scale))
scale = 1;
switch(param) {
case VDMOS_TEMP:
here->VDMOStemp = value->rValue+CONSTCtoK;
here->VDMOStempGiven = TRUE;
break;
case VDMOS_DTEMP:
here->VDMOSdtemp = value->rValue;
here->VDMOSdtempGiven = TRUE;
break;
case VDMOS_M:
here->VDMOSm = value->rValue;
here->VDMOSmGiven = TRUE;
break;
case VDMOS_W:
here->VDMOSw = value->rValue * scale;
here->VDMOSwGiven = TRUE;
break;
case VDMOS_L:
here->VDMOSl = value->rValue * scale;
here->VDMOSlGiven = TRUE;
break;
case VDMOS_AS:
here->VDMOSsourceArea = value->rValue * scale * scale;
here->VDMOSsourceAreaGiven = TRUE;
break;
case VDMOS_AD:
here->VDMOSdrainArea = value->rValue * scale * scale;
here->VDMOSdrainAreaGiven = TRUE;
break;
case VDMOS_PS:
here->VDMOSsourcePerimiter = value->rValue * scale;
here->VDMOSsourcePerimiterGiven = TRUE;
break;
case VDMOS_PD:
here->VDMOSdrainPerimiter = value->rValue * scale;
here->VDMOSdrainPerimiterGiven = TRUE;
break;
case VDMOS_NRS:
here->VDMOSsourceSquares = value->rValue;
here->VDMOSsourceSquaresGiven = TRUE;
break;
case VDMOS_NRD:
here->VDMOSdrainSquares = value->rValue;
here->VDMOSdrainSquaresGiven = TRUE;
break;
case VDMOS_OFF:
here->VDMOSoff = (value->iValue != 0);
break;
case VDMOS_IC_VBS:
here->VDMOSicVBS = value->rValue;
here->VDMOSicVBSGiven = TRUE;
break;
case VDMOS_IC_VDS:
here->VDMOSicVDS = value->rValue;
here->VDMOSicVDSGiven = TRUE;
break;
case VDMOS_IC_VGS:
here->VDMOSicVGS = value->rValue;
here->VDMOSicVGSGiven = TRUE;
break;
case VDMOS_IC:
switch(value->v.numValue){
case 3:
here->VDMOSicVBS = *(value->v.vec.rVec+2);
here->VDMOSicVBSGiven = TRUE;
case 2:
here->VDMOSicVGS = *(value->v.vec.rVec+1);
here->VDMOSicVGSGiven = TRUE;
case 1:
here->VDMOSicVDS = *(value->v.vec.rVec);
here->VDMOSicVDSGiven = TRUE;
break;
default:
return(E_BADPARM);
}
break;
case VDMOS_L_SENS:
if(value->iValue) {
here->VDMOSsenParmNo = 1;
here->VDMOSsens_l = 1;
}
break;
case VDMOS_W_SENS:
if(value->iValue) {
here->VDMOSsenParmNo = 1;
here->VDMOSsens_w = 1;
}
break;
default:
return(E_BADPARM);
}
return(OK);
}

132
src/spicelib/devices/vdmos/vdmospzld.c
View File

@ -0,0 +1,132 @@
/**********
Copyright 1990 Regents of the University of California. All rights reserved.
Author: 1985 Thomas L. Quarles
Modified: 2000 AlansFixes
**********/
/*
*/
#include "ngspice/ngspice.h"
#include "ngspice/cktdefs.h"
#include "ngspice/complex.h"
#include "vdmosdefs.h"
#include "ngspice/sperror.h"
#include "ngspice/suffix.h"
int
VDMOSpzLoad(GENmodel *inModel, CKTcircuit *ckt, SPcomplex *s)
{
VDMOSmodel *model = (VDMOSmodel*)inModel;
VDMOSinstance *here;
int xnrm;
int xrev;
double xgs;
double xgd;
double xgb;
double xbd;
double xbs;
double capgs;
double capgd;
double capgb;
double GateBulkOverlapCap;
double GateDrainOverlapCap;
double GateSourceOverlapCap;
double EffectiveLength;
for( ; model != NULL; model = VDMOSnextModel(model)) {
for(here = VDMOSinstances(model); here!= NULL;
here = VDMOSnextInstance(here)) {
if (here->VDMOSmode < 0) {
xnrm=0;
xrev=1;
} else {
xnrm=1;
xrev=0;
}
/*
* meyer's model parameters
*/
EffectiveLength=here->VDMOSl - 2*model->VDMOSlatDiff;
GateSourceOverlapCap = model->VDMOSgateSourceOverlapCapFactor *
here->VDMOSm * here->VDMOSw;
GateDrainOverlapCap = model->VDMOSgateDrainOverlapCapFactor *
here->VDMOSm * here->VDMOSw;
GateBulkOverlapCap = model->VDMOSgateBulkOverlapCapFactor *
here->VDMOSm * EffectiveLength;
capgs = ( 2* *(ckt->CKTstate0+here->VDMOScapgs)+
GateSourceOverlapCap );
capgd = ( 2* *(ckt->CKTstate0+here->VDMOScapgd)+
GateDrainOverlapCap );
capgb = ( 2* *(ckt->CKTstate0+here->VDMOScapgb)+
GateBulkOverlapCap );
xgs = capgs;
xgd = capgd;
xgb = capgb;
xbd = here->VDMOScapbd;
xbs = here->VDMOScapbs;
/*printf("vdmos: xgs=%g, xgd=%g, xgb=%g, xbd=%g, xbs=%g\n",
xgs,xgd,xgb,xbd,xbs);*/
/*
* load matrix
*/
*(here->VDMOSGgPtr ) += (xgd+xgs+xgb)*s->real;
*(here->VDMOSGgPtr +1) += (xgd+xgs+xgb)*s->imag;
*(here->VDMOSBbPtr ) += (xgb+xbd+xbs)*s->real;
*(here->VDMOSBbPtr +1) += (xgb+xbd+xbs)*s->imag;
*(here->VDMOSDPdpPtr ) += (xgd+xbd)*s->real;
*(here->VDMOSDPdpPtr +1) += (xgd+xbd)*s->imag;
*(here->VDMOSSPspPtr ) += (xgs+xbs)*s->real;
*(here->VDMOSSPspPtr +1) += (xgs+xbs)*s->imag;
*(here->VDMOSGbPtr ) -= xgb*s->real;
*(here->VDMOSGbPtr +1) -= xgb*s->imag;
*(here->VDMOSGdpPtr ) -= xgd*s->real;
*(here->VDMOSGdpPtr +1) -= xgd*s->imag;
*(here->VDMOSGspPtr ) -= xgs*s->real;
*(here->VDMOSGspPtr +1) -= xgs*s->imag;
*(here->VDMOSBgPtr ) -= xgb*s->real;
*(here->VDMOSBgPtr +1) -= xgb*s->imag;
*(here->VDMOSBdpPtr ) -= xbd*s->real;
*(here->VDMOSBdpPtr +1) -= xbd*s->imag;
*(here->VDMOSBspPtr ) -= xbs*s->real;
*(here->VDMOSBspPtr +1) -= xbs*s->imag;
*(here->VDMOSDPgPtr ) -= xgd*s->real;
*(here->VDMOSDPgPtr +1) -= xgd*s->imag;
*(here->VDMOSDPbPtr ) -= xbd*s->real;
*(here->VDMOSDPbPtr +1) -= xbd*s->imag;
*(here->VDMOSSPgPtr ) -= xgs*s->real;
*(here->VDMOSSPgPtr +1) -= xgs*s->imag;
*(here->VDMOSSPbPtr ) -= xbs*s->real;
*(here->VDMOSSPbPtr +1) -= xbs*s->imag;
*(here->VDMOSDdPtr) += here->VDMOSdrainConductance;
*(here->VDMOSSsPtr) += here->VDMOSsourceConductance;
*(here->VDMOSBbPtr) += here->VDMOSgbd+here->VDMOSgbs;
*(here->VDMOSDPdpPtr) += here->VDMOSdrainConductance+
here->VDMOSgds+here->VDMOSgbd+
xrev*(here->VDMOSgm+here->VDMOSgmbs);
*(here->VDMOSSPspPtr) += here->VDMOSsourceConductance+
here->VDMOSgds+here->VDMOSgbs+
xnrm*(here->VDMOSgm+here->VDMOSgmbs);
*(here->VDMOSDdpPtr) -= here->VDMOSdrainConductance;
*(here->VDMOSSspPtr) -= here->VDMOSsourceConductance;
*(here->VDMOSBdpPtr) -= here->VDMOSgbd;
*(here->VDMOSBspPtr) -= here->VDMOSgbs;
*(here->VDMOSDPdPtr) -= here->VDMOSdrainConductance;
*(here->VDMOSDPgPtr) += (xnrm-xrev)*here->VDMOSgm;
*(here->VDMOSDPbPtr) += -here->VDMOSgbd+(xnrm-xrev)*here->VDMOSgmbs;
*(here->VDMOSDPspPtr) -= here->VDMOSgds+
xnrm*(here->VDMOSgm+here->VDMOSgmbs);
*(here->VDMOSSPgPtr) -= (xnrm-xrev)*here->VDMOSgm;
*(here->VDMOSSPsPtr) -= here->VDMOSsourceConductance;
*(here->VDMOSSPbPtr) -= here->VDMOSgbs+(xnrm-xrev)*here->VDMOSgmbs;
*(here->VDMOSSPdpPtr) -= here->VDMOSgds+
xrev*(here->VDMOSgm+here->VDMOSgmbs);
}
}
return(OK);
}

785
src/spicelib/devices/vdmos/vdmossacl.c
View File

@ -0,0 +1,785 @@
/**********
Copyright 1990 Regents of the University of California. All rights reserved.
Author: 1985 Thomas L. Quarles
This function is obsolete (was used by an old sensitivity analysis)
**********/
#include "ngspice/ngspice.h"
#include "ngspice/smpdefs.h"
#include "ngspice/cktdefs.h"
#include "ngspice/const.h"
#include "vdmosdefs.h"
#include "ngspice/sperror.h"
#include "ngspice/suffix.h"
/* actually load the current ac sensitivity
* information into the array previously provided
*/
int
VDMOSsAcLoad(GENmodel *inModel, CKTcircuit *ckt)
{
VDMOSmodel *model = (VDMOSmodel*)inModel;
VDMOSinstance *here;
int xnrm;
int xrev;
double A0;
double Apert = 0.0;
double DELA;
double DELAinv;
double gdpr0;
double gspr0;
double gds0;
double gbs0;
double gbd0;
double gm0;
double gmbs0;
double gdpr;
double gspr;
double gds;
double gbs;
double gbd;
double gm;
double gmbs;
double xcgs0;
double xcgd0;
double xcgb0;
double xbd0;
double xbs0;
double xcgs;
double xcgd;
double xcgb;
double xbd;
double xbs;
double vbsOp;
double vbdOp;
double vspr;
double vdpr;
double vgs;
double vgd;
double vgb;
double vbs;
double vbd;
double vds;
double ivspr;
double ivdpr;
double ivgs;
double ivgd;
double ivgb;
double ivbs;
double ivbd;
double ivds;
double cspr;
double cdpr;
double cgs;
double cgd;
double cgb;
double cbs;
double cbd;
double cds;
double cs0;
double csprm0;
double cd0;
double cdprm0;
double cg0;
double cb0;
double cs;
double csprm;
double cd;
double cdprm;
double cg;
double cb;
double icspr;
double icdpr;
double icgs;
double icgd;
double icgb;
double icbs;
double icbd;
double icds;
double ics0;
double icsprm0;
double icd0;
double icdprm0;
double icg0;
double icb0;
double ics;
double icsprm;
double icd;
double icdprm;
double icg;
double icb;
double DvDp = 0.0;
int i;
int flag;
int error;
int iparmno;
double arg;
double sarg;
double sargsw;
double SaveState[44];
int save_mode;
SENstruct *info;
#ifdef SENSDEBUG
printf("VDMOSsenacload\n");
printf("CKTomega = %.5e\n",ckt->CKTomega);
#endif /* SENSDEBUG */
info = ckt->CKTsenInfo;
info->SENstatus = PERTURBATION;
for( ; model != NULL; model = VDMOSnextModel(model)) {
for(here = VDMOSinstances(model); here!= NULL;
here = VDMOSnextInstance(here)) {
/* save the unperturbed values in the state vector */
for(i=0; i <= 16; i++)
*(SaveState + i) = *(ckt->CKTstate0 + here->VDMOSstates + i);
*(SaveState + 17) = here->VDMOSsourceConductance;
*(SaveState + 18) = here->VDMOSdrainConductance;
*(SaveState + 19) = here->VDMOScd;
*(SaveState + 20) = here->VDMOScbs;
*(SaveState + 21) = here->VDMOScbd;
*(SaveState + 22) = here->VDMOSgmbs;
*(SaveState + 23) = here->VDMOSgm;
*(SaveState + 24) = here->VDMOSgds;
*(SaveState + 25) = here->VDMOSgbd;
*(SaveState + 26) = here->VDMOSgbs;
*(SaveState + 27) = here->VDMOScapbd;
*(SaveState + 28) = here->VDMOScapbs;
*(SaveState + 29) = here->VDMOSCbd;
*(SaveState + 30) = here->VDMOSCbdsw;
*(SaveState + 31) = here->VDMOSCbs;
*(SaveState + 32) = here->VDMOSCbssw;
*(SaveState + 33) = here->VDMOSf2d;
*(SaveState + 34) = here->VDMOSf3d;
*(SaveState + 35) = here->VDMOSf4d;
*(SaveState + 36) = here->VDMOSf2s;
*(SaveState + 37) = here->VDMOSf3s;
*(SaveState + 38) = here->VDMOSf4s;
*(SaveState + 39) = here->VDMOScgs;
*(SaveState + 40) = here->VDMOScgd;
*(SaveState + 41) = here->VDMOScgb;
*(SaveState + 42) = here->VDMOSvdsat;
*(SaveState + 43) = here->VDMOSvon;
save_mode = here->VDMOSmode;
xnrm=1;
xrev=0;
if (here->VDMOSmode < 0) {
xnrm=0;
xrev=1;
}
vbsOp = model->VDMOStype * (
*(ckt->CKTrhsOp+here->VDMOSbNode) -
*(ckt->CKTrhsOp+here->VDMOSsNodePrime));
vbdOp = model->VDMOStype * (
*(ckt->CKTrhsOp+here->VDMOSbNode) -
*(ckt->CKTrhsOp+here->VDMOSdNodePrime));
vspr = *(ckt->CKTrhsOld + here->VDMOSsNode)
- *(ckt->CKTrhsOld +
here->VDMOSsNodePrime) ;
ivspr = *(ckt->CKTirhsOld + here->VDMOSsNode)
- *(ckt->CKTirhsOld +
here->VDMOSsNodePrime) ;
vdpr = *(ckt->CKTrhsOld + here->VDMOSdNode)
- *(ckt->CKTrhsOld +
here->VDMOSdNodePrime) ;
ivdpr = *(ckt->CKTirhsOld + here->VDMOSdNode)
- *(ckt->CKTirhsOld +
here->VDMOSdNodePrime) ;
vgb = *(ckt->CKTrhsOld + here->VDMOSgNode)
- *(ckt->CKTrhsOld +
here->VDMOSbNode) ;
ivgb = *(ckt->CKTirhsOld + here->VDMOSgNode)
- *(ckt->CKTirhsOld +
here->VDMOSbNode) ;
vbs = *(ckt->CKTrhsOld + here->VDMOSbNode)
- *(ckt->CKTrhsOld +
here->VDMOSsNodePrime) ;
ivbs = *(ckt->CKTirhsOld + here->VDMOSbNode)
- *(ckt->CKTirhsOld +
here->VDMOSsNodePrime) ;
vbd = *(ckt->CKTrhsOld + here->VDMOSbNode)
- *(ckt->CKTrhsOld +
here->VDMOSdNodePrime) ;
ivbd = *(ckt->CKTirhsOld + here->VDMOSbNode)
- *(ckt->CKTirhsOld +
here->VDMOSdNodePrime) ;
vds = vbs - vbd ;
ivds = ivbs - ivbd ;
vgs = vgb + vbs ;
ivgs = ivgb + ivbs ;
vgd = vgb + vbd ;
ivgd = ivgb + ivbd ;
#ifdef SENSDEBUG
printf("senacload instance name %s\n",here->VDMOSname);
printf("gate = %d ,drain = %d, drainprm = %d\n",
here->VDMOSgNode,here->VDMOSdNode,here->VDMOSdNodePrime);
printf("source = %d , sourceprm = %d ,body = %d, senparmno = %d\n",
here->VDMOSsNode ,here->VDMOSsNodePrime,here->VDMOSbNode,
here->VDMOSsenParmNo);
printf("\n without perturbation \n");
#endif /* SENSDEBUG */
/* without perturbation */
*(ckt->CKTstate0 + here->VDMOSvbs) = vbsOp;
*(ckt->CKTstate0 + here->VDMOSvbd) = vbdOp;
here->VDMOSsenPertFlag = ON ;
if(info->SENacpertflag == 1){
/* store the unperturbed values of small signal parameters */
if((error = VDMOSload((GENmodel*)model,ckt)) != 0)
return(error);
*(here->VDMOSsenCgs) = here->VDMOScgs;
*(here->VDMOSsenCgd) = here->VDMOScgd;
*(here->VDMOSsenCgb) = here->VDMOScgb;
*(here->VDMOSsenCbd) = here->VDMOScapbd;
*(here->VDMOSsenCbs) = here->VDMOScapbs;
*(here->VDMOSsenGds) = here->VDMOSgds;
*(here->VDMOSsenGbs) = here->VDMOSgbs;
*(here->VDMOSsenGbd) = here->VDMOSgbd;
*(here->VDMOSsenGm) = here->VDMOSgm;
*(here->VDMOSsenGmbs) = here->VDMOSgmbs;
}
xcgs0= *(here->VDMOSsenCgs) * ckt->CKTomega;
xcgd0= *(here->VDMOSsenCgd) * ckt->CKTomega;
xcgb0= *(here->VDMOSsenCgb) * ckt->CKTomega;
xbd0= *(here->VDMOSsenCbd) * ckt->CKTomega;
xbs0= *(here->VDMOSsenCbs) * ckt->CKTomega;
gds0= *(here->VDMOSsenGds);
gbs0= *(here->VDMOSsenGbs);
gbd0= *(here->VDMOSsenGbd);
gm0= *(here->VDMOSsenGm);
gmbs0= *(here->VDMOSsenGmbs);
gdpr0 = here->VDMOSdrainConductance;
gspr0 = here->VDMOSsourceConductance;
cspr = gspr0 * vspr ;
icspr = gspr0 * ivspr ;
cdpr = gdpr0 * vdpr ;
icdpr = gdpr0 * ivdpr ;
cgs = ( - xcgs0 * ivgs );
icgs = xcgs0 * vgs ;
cgd = ( - xcgd0 * ivgd );
icgd = xcgd0 * vgd ;
cgb = ( - xcgb0 * ivgb );
icgb = xcgb0 * vgb ;
cbs = ( gbs0 * vbs - xbs0 * ivbs );
icbs = ( xbs0 * vbs + gbs0 * ivbs );
cbd = ( gbd0 * vbd - xbd0 * ivbd );
icbd = ( xbd0 * vbd + gbd0 * ivbd );
cds = ( gds0 * vds + xnrm * (gm0 * vgs + gmbs0 * vbs)
- xrev * (gm0 * vgd + gmbs0 * vbd) );
icds = ( gds0 * ivds + xnrm * (gm0 * ivgs + gmbs0 * ivbs)
- xrev * (gm0 * ivgd + gmbs0 * ivbd) );
cs0 = cspr;
ics0 = icspr;
csprm0 = ( -cspr - cgs - cbs - cds ) ;
icsprm0 = ( -icspr - icgs - icbs - icds ) ;
cd0 = cdpr;
icd0 = icdpr;
cdprm0 = ( -cdpr - cgd - cbd + cds ) ;
icdprm0 = ( -icdpr - icgd - icbd + icds ) ;
cg0 = cgs + cgd + cgb ;
icg0 = icgs + icgd + icgb ;
cb0 = cbs + cbd - cgb ;
icb0 = icbs + icbd - icgb ;
#ifdef SENSDEBUG
printf("gspr0 = %.7e , gdpr0 = %.7e , gds0 = %.7e, gbs0 = %.7e\n",
gspr0,gdpr0,gds0,gbs0);
printf("gbd0 = %.7e , gm0 = %.7e , gmbs0 = %.7e\n",gbd0,gm0,gmbs0);
printf("xcgs0 = %.7e , xcgd0 = %.7e , xcgb0 = %.7e,",
xcgs0,xcgd0,xcgb0);
printf("xbd0 = %.7e,xbs0 = %.7e\n",xbd0,xbs0);
printf("vbs = %.7e , vbd = %.7e , vgb = %.7e\n",vbs,vbd,vgb);
printf("ivbs = %.7e , ivbd = %.7e , ivgb = %.7e\n",ivbs,ivbd,ivgb);
printf("cbs0 = %.7e , cbd0 = %.7e , cgb0 = %.7e\n",cbs,cbd,cgb);
printf("cb0 = %.7e , cg0 = %.7e , cs0 = %.7e\n",cb0,cg0,cs0);
printf("csprm0 = %.7e, cd0 = %.7e, cdprm0 = %.7e\n",
csprm0,cd0,cdprm0);
printf("icb0 = %.7e , icg0 = %.7e , ics0 = %.7e\n",icb0,icg0,ics0);
printf("icsprm0 = %.7e, icd0 = %.7e, icdprm0 = %.7e\n",
icsprm0,icd0,icdprm0);
printf("\nPerturbation of vbs\n");
#endif /* SENSDEBUG */
/* Perturbation of vbs */
flag = 1;
A0 = vbsOp;
DELA = info->SENpertfac * here->VDMOStVto ;
DELAinv = 1.0/DELA;
if(info->SENacpertflag == 1){
/* store the values of small signal parameters
* corresponding to perturbed vbs */
Apert = A0 + DELA;
*(ckt->CKTstate0 + here->VDMOSvbs) = Apert;
*(ckt->CKTstate0 + here->VDMOSvbd) = vbdOp;
if((error = VDMOSload((GENmodel*)model,ckt)) != 0)
return(error);
*(here->VDMOSsenCgs + 1) = here->VDMOScgs;
*(here->VDMOSsenCgd + 1) = here->VDMOScgd;
*(here->VDMOSsenCgb + 1) = here->VDMOScgb;
*(here->VDMOSsenCbd + 1) = here->VDMOScapbd;
*(here->VDMOSsenCbs + 1) = here->VDMOScapbs;
*(here->VDMOSsenGds + 1) = here->VDMOSgds;
*(here->VDMOSsenGbs + 1) = here->VDMOSgbs;
*(here->VDMOSsenGbd + 1) = here->VDMOSgbd;
*(here->VDMOSsenGm + 1) = here->VDMOSgm;
*(here->VDMOSsenGmbs + 1) = here->VDMOSgmbs;
*(ckt->CKTstate0 + here->VDMOSvbs) = A0;
}
goto load;
pertvbd: /* Perturbation of vbd */
#ifdef SENSDEBUG
printf("\nPerturbation of vbd\n");
#endif /* SENSDEBUG */
flag = 2;
A0 = vbdOp;
DELA = info->SENpertfac * here->VDMOStVto + 1e-8;
DELAinv = 1.0/DELA;
if(info->SENacpertflag == 1){
/* store the values of small signal parameters
* corresponding to perturbed vbd */
Apert = A0 + DELA;
*(ckt->CKTstate0 + here->VDMOSvbs) = vbsOp;
*(ckt->CKTstate0 + here->VDMOSvbd) = Apert;
if((error = VDMOSload((GENmodel*)model,ckt)) != 0)
return(error);
*(here->VDMOSsenCgs + 2) = here->VDMOScgs;
*(here->VDMOSsenCgd + 2) = here->VDMOScgd;
*(here->VDMOSsenCgb + 2) = here->VDMOScgb;
*(here->VDMOSsenCbd + 2) = here->VDMOScapbd;
*(here->VDMOSsenCbs + 2) = here->VDMOScapbs;
*(here->VDMOSsenGds + 2) = here->VDMOSgds;
*(here->VDMOSsenGbs + 2) = here->VDMOSgbs;
*(here->VDMOSsenGbd + 2) = here->VDMOSgbd;
*(here->VDMOSsenGm + 2) = here->VDMOSgm;
*(here->VDMOSsenGmbs + 2) = here->VDMOSgmbs;
*(ckt->CKTstate0 + here->VDMOSvbd) = A0;
}
goto load;
pertvgb: /* Perturbation of vgb */
#ifdef SENSDEBUG
printf("\nPerturbation of vgb\n");
#endif /* SENSDEBUG */
flag = 3;
A0 = model->VDMOStype * (*(ckt->CKTrhsOp + here->VDMOSgNode)
- *(ckt->CKTrhsOp + here->VDMOSbNode));
DELA = info->SENpertfac * A0 + 1e-8;
DELAinv = model->VDMOStype * 1.0/DELA;
if(info->SENacpertflag == 1){
/* store the values of small signal parameters
* corresponding to perturbed vgb */
*(ckt->CKTstate0 + here->VDMOSvbs) = vbsOp;
*(ckt->CKTstate0 + here->VDMOSvbd) = vbdOp;
*(ckt->CKTrhsOp + here->VDMOSbNode) -= DELA;
if((error = VDMOSload((GENmodel*)model,ckt)) != 0)
return(error);
*(here->VDMOSsenCgs + 3) = here->VDMOScgs;
*(here->VDMOSsenCgd + 3) = here->VDMOScgd;
*(here->VDMOSsenCgb + 3) = here->VDMOScgb;
*(here->VDMOSsenCbd + 3) = here->VDMOScapbd;
*(here->VDMOSsenCbs + 3) = here->VDMOScapbs;
*(here->VDMOSsenGds + 3) = here->VDMOSgds;
*(here->VDMOSsenGbs + 3) = here->VDMOSgbs;
*(here->VDMOSsenGbd + 3) = here->VDMOSgbd;
*(here->VDMOSsenGm + 3) = here->VDMOSgm;
*(here->VDMOSsenGmbs + 3) = here->VDMOSgmbs;
*(ckt->CKTrhsOp + here->VDMOSbNode) += DELA;
}
goto load;
pertl: /* Perturbation of length */
if(here->VDMOSsens_l == 0){
goto pertw;
}
#ifdef SENSDEBUG
printf("\nPerturbation of length\n");
#endif /* SENSDEBUG */
flag = 4;
A0 = here->VDMOSl;
DELA = info->SENpertfac * A0;
DELAinv = 1.0/DELA;
if(info->SENacpertflag == 1){
/* store the values of small signal parameters
* corresponding to perturbed length */
Apert = A0 + DELA;
here->VDMOSl = Apert;
*(ckt->CKTstate0 + here->VDMOSvbs) = vbsOp;
*(ckt->CKTstate0 + here->VDMOSvbd) = vbdOp;
if ((error = VDMOSload((GENmodel*)model,ckt)) != 0)
return(error);
*(here->VDMOSsenCgs + 4) = here->VDMOScgs;
*(here->VDMOSsenCgd + 4) = here->VDMOScgd;
*(here->VDMOSsenCgb + 4) = here->VDMOScgb;
*(here->VDMOSsenCbd + 4) = here->VDMOScapbd;
*(here->VDMOSsenCbs + 4) = here->VDMOScapbs;
*(here->VDMOSsenGds + 4) = here->VDMOSgds;
*(here->VDMOSsenGbs + 4) = here->VDMOSgbs;
*(here->VDMOSsenGbd + 4) = here->VDMOSgbd;
*(here->VDMOSsenGm + 4) = here->VDMOSgm;
*(here->VDMOSsenGmbs + 4) = here->VDMOSgmbs;
here->VDMOSl = A0;
}
goto load;
pertw: /* Perturbation of width */
if(here->VDMOSsens_w == 0)
goto next;
#ifdef SENSDEBUG
printf("\nPerturbation of width\n");
#endif /* SENSDEBUG */
flag = 5;
A0 = here->VDMOSw;
DELA = info->SENpertfac * A0;
DELAinv = 1.0/DELA;
Apert = A0 + DELA;
if(info->SENacpertflag == 1){
/* store the values of small signal parameters
* corresponding to perturbed width */
here->VDMOSw = Apert;
here->VDMOSdrainArea *= (1 + info->SENpertfac);
here->VDMOSsourceArea *= (1 + info->SENpertfac);
here->VDMOSCbd *= (1 + info->SENpertfac);
here->VDMOSCbs *= (1 + info->SENpertfac);
if(here->VDMOSdrainPerimiter){
here->VDMOSCbdsw += here->VDMOSCbdsw *
DELA/here->VDMOSdrainPerimiter;
}
if(here->VDMOSsourcePerimiter){
here->VDMOSCbssw += here->VDMOSCbssw *
DELA/here->VDMOSsourcePerimiter;
}
if(vbdOp >= here->VDMOStDepCap){
arg = 1-model->VDMOSfwdCapDepCoeff;
sarg = exp( (-model->VDMOSbulkJctBotGradingCoeff) *
log(arg) );
sargsw = exp( (-model->VDMOSbulkJctSideGradingCoeff) *
log(arg) );
here->VDMOSf2d = here->VDMOSCbd*(1-model->VDMOSfwdCapDepCoeff*
(1+model->VDMOSbulkJctBotGradingCoeff))* sarg/arg
+ here->VDMOSCbdsw*(1-model->VDMOSfwdCapDepCoeff*
(1+model->VDMOSbulkJctSideGradingCoeff))*
sargsw/arg;
here->VDMOSf3d = here->VDMOSCbd *
model->VDMOSbulkJctBotGradingCoeff * sarg/arg/
here->VDMOStBulkPot + here->VDMOSCbdsw *
model->VDMOSbulkJctSideGradingCoeff * sargsw/arg /
here->VDMOStBulkPot;
here->VDMOSf4d = here->VDMOSCbd*here->VDMOStBulkPot*
(1-arg*sarg)/ (1-model->VDMOSbulkJctBotGradingCoeff)
+ here->VDMOSCbdsw*here->VDMOStBulkPot*(1-arg*sargsw)/
(1-model->VDMOSbulkJctSideGradingCoeff)
-here->VDMOSf3d/2*
(here->VDMOStDepCap*here->VDMOStDepCap)
-here->VDMOStDepCap * here->VDMOSf2d;
}
if(vbsOp >= here->VDMOStDepCap){
arg = 1-model->VDMOSfwdCapDepCoeff;
sarg = exp( (-model->VDMOSbulkJctBotGradingCoeff) *
log(arg) );
sargsw = exp( (-model->VDMOSbulkJctSideGradingCoeff) *
log(arg) );
here->VDMOSf2s = here->VDMOSCbs*(1-model->VDMOSfwdCapDepCoeff*
(1+model->VDMOSbulkJctBotGradingCoeff))* sarg/arg
+ here->VDMOSCbssw*(1-model->VDMOSfwdCapDepCoeff*
(1+model->VDMOSbulkJctSideGradingCoeff))*
sargsw/arg;
here->VDMOSf3s = here->VDMOSCbs *
model->VDMOSbulkJctBotGradingCoeff * sarg/arg/
here->VDMOStBulkPot + here->VDMOSCbssw *
model->VDMOSbulkJctSideGradingCoeff * sargsw/arg /
here->VDMOStBulkPot;
here->VDMOSf4s = here->VDMOSCbs*
here->VDMOStBulkPot*(1-arg*sarg)/
(1-model->VDMOSbulkJctBotGradingCoeff)
+ here->VDMOSCbssw*here->VDMOStBulkPot*(1-arg*sargsw)/
(1-model->VDMOSbulkJctSideGradingCoeff)
-here->VDMOSf3s/2*
(here->VDMOStDepCap*here->VDMOStDepCap)
-here->VDMOStDepCap * here->VDMOSf2s;
}
*(ckt->CKTstate0 + here->VDMOSvbs) = vbsOp;
*(ckt->CKTstate0 + here->VDMOSvbd) = vbdOp;
if ((error = VDMOSload((GENmodel*)model,ckt)) != 0)
return(error);
*(here->VDMOSsenCgs + 5) = here->VDMOScgs;
*(here->VDMOSsenCgd + 5) = here->VDMOScgd;
*(here->VDMOSsenCgb + 5) = here->VDMOScgb;
*(here->VDMOSsenCbd + 5) = here->VDMOScapbd;
*(here->VDMOSsenCbs + 5) = here->VDMOScapbs;
*(here->VDMOSsenGds + 5) = here->VDMOSgds;
*(here->VDMOSsenGbs + 5) = here->VDMOSgbs;
*(here->VDMOSsenGbd + 5) = here->VDMOSgbd;
*(here->VDMOSsenGm + 5) = here->VDMOSgm;
*(here->VDMOSsenGmbs + 5) = here->VDMOSgmbs;
here->VDMOSw = A0;
here->VDMOSdrainArea /= (1 + info->SENpertfac);
here->VDMOSsourceArea /= (1 + info->SENpertfac);
}
load:
gds= *(here->VDMOSsenGds + flag);
gbs= *(here->VDMOSsenGbs + flag);
gbd= *(here->VDMOSsenGbd + flag);
gm= *(here->VDMOSsenGm + flag);
gmbs= *(here->VDMOSsenGmbs + flag);
if(flag == 5){
gdpr = here->VDMOSdrainConductance * Apert/A0;
gspr = here->VDMOSsourceConductance * Apert/A0;
}
else{
gdpr = here->VDMOSdrainConductance;
gspr = here->VDMOSsourceConductance;
}
xcgs= *(here->VDMOSsenCgs + flag) * ckt->CKTomega;
xcgd= *(here->VDMOSsenCgd + flag) * ckt->CKTomega;
xcgb= *(here->VDMOSsenCgb + flag) * ckt->CKTomega;
xbd= *(here->VDMOSsenCbd + flag) * ckt->CKTomega;
xbs= *(here->VDMOSsenCbs + flag) * ckt->CKTomega;
#ifdef SENSDEBUG
printf("flag = %d \n",flag);
printf("gspr = %.7e , gdpr = %.7e , gds = %.7e, gbs = %.7e\n",
gspr,gdpr,gds,gbs);
printf("gbd = %.7e , gm = %.7e , gmbs = %.7e\n",gbd,gm,gmbs);
printf("xcgs = %.7e , xcgd = %.7e , xcgb = %.7e,", xcgs,xcgd,xcgb);
printf("xbd = %.7e,xbs = %.7e\n",xbd,xbs);
#endif /* SENSDEBUG */
cspr = gspr * vspr ;
icspr = gspr * ivspr ;
cdpr = gdpr * vdpr ;
icdpr = gdpr * ivdpr ;
cgs = ( - xcgs * ivgs );
icgs = xcgs * vgs ;
cgd = ( - xcgd * ivgd );
icgd = xcgd * vgd ;
cgb = ( - xcgb * ivgb );
icgb = xcgb * vgb ;
cbs = ( gbs * vbs - xbs * ivbs );
icbs = ( xbs * vbs + gbs * ivbs );
cbd = ( gbd * vbd - xbd * ivbd );
icbd = ( xbd * vbd + gbd * ivbd );
cds = ( gds * vds + xnrm * (gm * vgs + gmbs * vbs)
- xrev * (gm * vgd + gmbs * vbd) );
icds = ( gds * ivds + xnrm * (gm * ivgs + gmbs * ivbs)
- xrev * (gm * ivgd + gmbs * ivbd) );
cs = cspr;
ics = icspr;
csprm = ( -cspr - cgs - cbs - cds ) ;
icsprm = ( -icspr - icgs - icbs - icds ) ;
cd = cdpr;
icd = icdpr;
cdprm = ( -cdpr - cgd - cbd + cds ) ;
icdprm = ( -icdpr - icgd - icbd + icds ) ;
cg = cgs + cgd + cgb ;
icg = icgs + icgd + icgb ;
cb = cbs + cbd - cgb ;
icb = icbs + icbd - icgb ;
#ifdef SENSDEBUG
printf("vbs = %.7e , vbd = %.7e , vgb = %.7e\n",vbs,vbd,vgb);
printf("ivbs = %.7e , ivbd = %.7e , ivgb = %.7e\n",ivbs,ivbd,ivgb);
printf("cbs = %.7e , cbd = %.7e , cgb = %.7e\n",cbs,cbd,cgb);
printf("cb = %.7e , cg = %.7e , cs = %.7e\n",cb,cg,cs);
printf("csprm = %.7e, cd = %.7e, cdprm = %.7e\n",csprm,cd,cdprm);
printf("icb = %.7e , icg = %.7e , ics = %.7e\n",icb,icg,ics);
printf("icsprm = %.7e, icd = %.7e, icdprm = %.7e\n",
icsprm,icd,icdprm);
#endif /* SENSDEBUG */
for(iparmno = 1;iparmno<=info->SENparms;iparmno++){
if((flag == 4) && (iparmno != here->VDMOSsenParmNo)) continue;
if( (flag == 5) && (iparmno != (here->VDMOSsenParmNo +
here->VDMOSsens_l))) continue;
switch(flag){
case 1:
DvDp = model->VDMOStype *
(info->SEN_Sap[here->VDMOSbNode][iparmno]
- info->SEN_Sap[here->VDMOSsNodePrime][iparmno]);
break;
case 2:
DvDp = model->VDMOStype *
( info->SEN_Sap[here->VDMOSbNode][iparmno]
- info->SEN_Sap[here->VDMOSdNodePrime][iparmno]);
break;
case 3:
DvDp = model->VDMOStype *
( info->SEN_Sap[here->VDMOSgNode][iparmno]
- info->SEN_Sap[here->VDMOSbNode][iparmno]);
break;
case 4:
DvDp = 1;
break;
case 5:
DvDp = 1;
break;
}
*(info->SEN_RHS[here->VDMOSbNode] + iparmno) -=
( cb - cb0) * DELAinv * DvDp;
*(info->SEN_iRHS[here->VDMOSbNode] + iparmno) -=
( icb - icb0) * DELAinv * DvDp;
*(info->SEN_RHS[here->VDMOSgNode] + iparmno) -=
( cg - cg0) * DELAinv * DvDp;
*(info->SEN_iRHS[here->VDMOSgNode] + iparmno) -=
( icg - icg0) * DELAinv * DvDp;
if(here->VDMOSsNode != here->VDMOSsNodePrime){
*(info->SEN_RHS[here->VDMOSsNode] + iparmno) -=
( cs - cs0) * DELAinv * DvDp;
*(info->SEN_iRHS[here->VDMOSsNode] + iparmno) -=
( ics - ics0) * DELAinv * DvDp;
}
*(info->SEN_RHS[here->VDMOSsNodePrime] + iparmno) -=
( csprm - csprm0) * DELAinv * DvDp;
*(info->SEN_iRHS[here->VDMOSsNodePrime] + iparmno) -=
( icsprm - icsprm0) * DELAinv * DvDp;
if(here->VDMOSdNode != here->VDMOSdNodePrime){
*(info->SEN_RHS[here->VDMOSdNode] + iparmno) -=
( cd - cd0) * DELAinv * DvDp;
*(info->SEN_iRHS[here->VDMOSdNode] + iparmno) -=
( icd - icd0) * DELAinv * DvDp;
}
*(info->SEN_RHS[here->VDMOSdNodePrime] + iparmno) -=
( cdprm - cdprm0) * DELAinv * DvDp;
*(info->SEN_iRHS[here->VDMOSdNodePrime] + iparmno) -=
( icdprm - icdprm0) * DELAinv * DvDp;
#ifdef SENSDEBUG
printf("after loading\n");
printf("DvDp = %.5e , DELAinv = %.5e ,flag = %d ,",
DvDp,DELAinv,flag);
printf("iparmno = %d,senparmno = %d\n",
iparmno,here->VDMOSsenParmNo);
printf("A0 = %.5e , Apert = %.5e ,CONSTvt = %.5e \n",
A0,Apert,here->VDMOStVto);
printf("senb = %.7e + j%.7e ",
*(info->SEN_RHS[here->VDMOSbNode] + iparmno),
*(info->SEN_iRHS[here->VDMOSbNode] + iparmno));
printf("seng = %.7e + j%.7e ",
*(info->SEN_RHS[here->VDMOSgNode] + iparmno),
*(info->SEN_iRHS[here->VDMOSgNode] + iparmno));
printf("sens = %.7e + j%.7e ",
*(info->SEN_RHS[here->VDMOSsNode] + iparmno),
*(info->SEN_iRHS[here->VDMOSsNode] + iparmno));
printf("sensprm = %.7e + j%.7e ",
*(info->SEN_RHS[here->VDMOSsNodePrime] + iparmno),
*(info->SEN_iRHS[here->VDMOSsNodePrime] + iparmno));
printf("send = %.7e + j%.7e ",
*(info->SEN_RHS[here->VDMOSdNode] + iparmno),
*(info->SEN_iRHS[here->VDMOSdNode] + iparmno));
printf("sendprm = %.7e + j%.7e ",
*(info->SEN_RHS[here->VDMOSdNodePrime] + iparmno),
*(info->SEN_iRHS[here->VDMOSdNodePrime] + iparmno));
#endif /* SENSDEBUG */
}
switch(flag){
case 1:
goto pertvbd ;
case 2:
goto pertvgb ;
case 3:
goto pertl ;
case 4:
goto pertw ;
case 5:
break;
}
next:
;
/* put the unperturbed values back into the state vector */
for(i=0; i <= 16; i++)
*(ckt->CKTstate0 + here->VDMOSstates + i) = *(SaveState + i);
here->VDMOSsourceConductance = *(SaveState + 17) ;
here->VDMOSdrainConductance = *(SaveState + 18) ;
here->VDMOScd = *(SaveState + 19) ;
here->VDMOScbs = *(SaveState + 20) ;
here->VDMOScbd = *(SaveState + 21) ;
here->VDMOSgmbs = *(SaveState + 22) ;
here->VDMOSgm = *(SaveState + 23) ;
here->VDMOSgds = *(SaveState + 24) ;
here->VDMOSgbd = *(SaveState + 25) ;
here->VDMOSgbs = *(SaveState + 26) ;
here->VDMOScapbd = *(SaveState + 27) ;
here->VDMOScapbs = *(SaveState + 28) ;
here->VDMOSCbd = *(SaveState + 29) ;
here->VDMOSCbdsw = *(SaveState + 30) ;
here->VDMOSCbs = *(SaveState + 31) ;
here->VDMOSCbssw = *(SaveState + 32) ;
here->VDMOSf2d = *(SaveState + 33) ;
here->VDMOSf3d = *(SaveState + 34) ;
here->VDMOSf4d = *(SaveState + 35) ;
here->VDMOSf2s = *(SaveState + 36) ;
here->VDMOSf3s = *(SaveState + 37) ;
here->VDMOSf4s = *(SaveState + 38) ;
here->VDMOScgs = *(SaveState + 39) ;
here->VDMOScgd = *(SaveState + 40) ;
here->VDMOScgb = *(SaveState + 41) ;
here->VDMOSvdsat = *(SaveState + 42) ;
here->VDMOSvon = *(SaveState + 43) ;
here->VDMOSmode = save_mode ;
here->VDMOSsenPertFlag = OFF;
}
}
info->SENstatus = NORMAL;
#ifdef SENSDEBUG
printf("VDMOSsenacload end\n");
#endif /* SENSDEBUG */
return(OK);
}

238
src/spicelib/devices/vdmos/vdmosset.c
View File

@ -0,0 +1,238 @@
/**********
Copyright 1990 Regents of the University of California. All rights reserved.
Author: 1985 Thomas L. Quarles
Modified: 2000 AlansFixes
**********/
/* load the VDMOS device structure with those pointers needed later
* for fast matrix loading
*/
#include "ngspice/ngspice.h"
#include "ngspice/smpdefs.h"
#include "ngspice/cktdefs.h"
#include "vdmosdefs.h"
#include "ngspice/sperror.h"
#include "ngspice/suffix.h"
int
VDMOSsetup(SMPmatrix *matrix, GENmodel *inModel, CKTcircuit *ckt,
int *states)
{
VDMOSmodel *model = (VDMOSmodel *)inModel;
VDMOSinstance *here;
int error;
CKTnode *tmp;
/* loop through all the VDMOS device models */
for( ; model != NULL; model = VDMOSnextModel(model)) {
if(!model->VDMOStypeGiven) {
model->VDMOStype = NMOS;
}
if(!model->VDMOSlatDiffGiven) {
model->VDMOSlatDiff = 0;
}
if(!model->VDMOSjctSatCurDensityGiven) {
model->VDMOSjctSatCurDensity = 0;
}
if(!model->VDMOSjctSatCurGiven) {
model->VDMOSjctSatCur = 1e-14;
}
if(!model->VDMOStransconductanceGiven) {
model->VDMOStransconductance = 2e-5;
}
if(!model->VDMOSgateSourceOverlapCapFactorGiven) {
model->VDMOSgateSourceOverlapCapFactor = 0;
}
if(!model->VDMOSgateDrainOverlapCapFactorGiven) {
model->VDMOSgateDrainOverlapCapFactor = 0;
}
if(!model->VDMOSgateBulkOverlapCapFactorGiven) {
model->VDMOSgateBulkOverlapCapFactor = 0;
}
if(!model->VDMOSvt0Given) {
model->VDMOSvt0 = 0;
}
if(!model->VDMOSbulkCapFactorGiven) {
model->VDMOSbulkCapFactor = 0;
}
if(!model->VDMOSsideWallCapFactorGiven) {
model->VDMOSsideWallCapFactor = 0;
}
if(!model->VDMOSbulkJctPotentialGiven) {
model->VDMOSbulkJctPotential = .8;
}
if(!model->VDMOSbulkJctBotGradingCoeffGiven) {
model->VDMOSbulkJctBotGradingCoeff = .5;
}
if(!model->VDMOSbulkJctSideGradingCoeffGiven) {
model->VDMOSbulkJctSideGradingCoeff = .5;
}
if(!model->VDMOSfwdCapDepCoeffGiven) {
model->VDMOSfwdCapDepCoeff = .5;
}
if(!model->VDMOSphiGiven) {
model->VDMOSphi = .6;
}
if(!model->VDMOSlambdaGiven) {
model->VDMOSlambda = 0;
}
if(!model->VDMOSgammaGiven) {
model->VDMOSgamma = 0;
}
if(!model->VDMOSfNcoefGiven) {
model->VDMOSfNcoef = 0;
}
if(!model->VDMOSfNexpGiven) {
model->VDMOSfNexp = 1;
}
/* loop through all the instances of the model */
for (here = VDMOSinstances(model); here != NULL ;
here=VDMOSnextInstance(here)) {
/* allocate a chunk of the state vector */
here->VDMOSstates = *states;
*states += VDMOSnumStates;
if(ckt->CKTsenInfo && (ckt->CKTsenInfo->SENmode & TRANSEN) ){
*states += VDMOSnumSenStates * (ckt->CKTsenInfo->SENparms);
}
if(!here->VDMOSdrainPerimiterGiven) {
here->VDMOSdrainPerimiter = 0;
}
if(!here->VDMOSicVBSGiven) {
here->VDMOSicVBS = 0;
}
if(!here->VDMOSicVDSGiven) {
here->VDMOSicVDS = 0;
}
if(!here->VDMOSicVGSGiven) {
here->VDMOSicVGS = 0;
}
if(!here->VDMOSsourcePerimiterGiven) {
here->VDMOSsourcePerimiter = 0;
}
if(!here->VDMOSvdsatGiven) {
here->VDMOSvdsat = 0;
}
if(!here->VDMOSvonGiven) {
here->VDMOSvon = 0;
}
if(!here->VDMOSdrainSquaresGiven) {
here->VDMOSdrainSquares=1;
}
if(!here->VDMOSsourceSquaresGiven) {
here->VDMOSsourceSquares=1;
}
if ((model->VDMOSdrainResistance != 0
|| (model->VDMOSsheetResistance != 0
&& here->VDMOSdrainSquares != 0) )) {
if (here->VDMOSdNodePrime == 0) {
error = CKTmkVolt(ckt,&tmp,here->VDMOSname,"drain");
if(error) return(error);
here->VDMOSdNodePrime = tmp->number;
if (ckt->CKTcopyNodesets) {
CKTnode *tmpNode;
IFuid tmpName;
if (CKTinst2Node(ckt,here,1,&tmpNode,&tmpName)==OK) {
if (tmpNode->nsGiven) {
tmp->nodeset=tmpNode->nodeset;
tmp->nsGiven=tmpNode->nsGiven;
}
}
}
}
} else {
here->VDMOSdNodePrime = here->VDMOSdNode;
}
if((model->VDMOSsourceResistance != 0 ||
(model->VDMOSsheetResistance != 0 &&
here->VDMOSsourceSquares != 0) )) {
if (here->VDMOSsNodePrime == 0) {
error = CKTmkVolt(ckt,&tmp,here->VDMOSname,"source");
if(error) return(error);
here->VDMOSsNodePrime = tmp->number;
if (ckt->CKTcopyNodesets) {
CKTnode *tmpNode;
IFuid tmpName;
if (CKTinst2Node(ckt,here,3,&tmpNode,&tmpName)==OK) {
if (tmpNode->nsGiven) {
tmp->nodeset=tmpNode->nodeset;
tmp->nsGiven=tmpNode->nsGiven;
}
}
}
}
} else {
here->VDMOSsNodePrime = here->VDMOSsNode;
}
/* macro to make elements with built in test for out of memory */
#define TSTALLOC(ptr,first,second) \
do { if((here->ptr = SMPmakeElt(matrix, here->first, here->second)) == NULL){\
return(E_NOMEM);\
} } while(0)
TSTALLOC(VDMOSDdPtr,VDMOSdNode,VDMOSdNode);
TSTALLOC(VDMOSGgPtr,VDMOSgNode,VDMOSgNode);
TSTALLOC(VDMOSSsPtr,VDMOSsNode,VDMOSsNode);
TSTALLOC(VDMOSBbPtr,VDMOSbNode,VDMOSbNode);
TSTALLOC(VDMOSDPdpPtr,VDMOSdNodePrime,VDMOSdNodePrime);
TSTALLOC(VDMOSSPspPtr,VDMOSsNodePrime,VDMOSsNodePrime);
TSTALLOC(VDMOSDdpPtr,VDMOSdNode,VDMOSdNodePrime);
TSTALLOC(VDMOSGbPtr,VDMOSgNode,VDMOSbNode);
TSTALLOC(VDMOSGdpPtr,VDMOSgNode,VDMOSdNodePrime);
TSTALLOC(VDMOSGspPtr,VDMOSgNode,VDMOSsNodePrime);
TSTALLOC(VDMOSSspPtr,VDMOSsNode,VDMOSsNodePrime);
TSTALLOC(VDMOSBdpPtr,VDMOSbNode,VDMOSdNodePrime);
TSTALLOC(VDMOSBspPtr,VDMOSbNode,VDMOSsNodePrime);
TSTALLOC(VDMOSDPspPtr,VDMOSdNodePrime,VDMOSsNodePrime);
TSTALLOC(VDMOSDPdPtr,VDMOSdNodePrime,VDMOSdNode);
TSTALLOC(VDMOSBgPtr,VDMOSbNode,VDMOSgNode);
TSTALLOC(VDMOSDPgPtr,VDMOSdNodePrime,VDMOSgNode);
TSTALLOC(VDMOSSPgPtr,VDMOSsNodePrime,VDMOSgNode);
TSTALLOC(VDMOSSPsPtr,VDMOSsNodePrime,VDMOSsNode);
TSTALLOC(VDMOSDPbPtr,VDMOSdNodePrime,VDMOSbNode);
TSTALLOC(VDMOSSPbPtr,VDMOSsNodePrime,VDMOSbNode);
TSTALLOC(VDMOSSPdpPtr,VDMOSsNodePrime,VDMOSdNodePrime);
}
}
return(OK);
}
int
VDMOSunsetup(GENmodel *inModel, CKTcircuit *ckt)
{
VDMOSmodel *model;
VDMOSinstance *here;
for (model = (VDMOSmodel *)inModel; model != NULL;
model = VDMOSnextModel(model))
{
for (here = VDMOSinstances(model); here != NULL;
here=VDMOSnextInstance(here))
{
if (here->VDMOSsNodePrime > 0
&& here->VDMOSsNodePrime != here->VDMOSsNode)
CKTdltNNum(ckt, here->VDMOSsNodePrime);
here->VDMOSsNodePrime= 0;
if (here->VDMOSdNodePrime > 0
&& here->VDMOSdNodePrime != here->VDMOSdNode)
CKTdltNNum(ckt, here->VDMOSdNodePrime);
here->VDMOSdNodePrime= 0;
}
}
return OK;
}

623
src/spicelib/devices/vdmos/vdmossld.c
View File

@ -0,0 +1,623 @@
/**********
Copyright 1990 Regents of the University of California. All rights reserved.
Author: 1985 Thomas L. Quarles
This function is obsolete (was used by an old sensitivity analysis)
**********/
/* actually load the current sensitivity
* information into the array previously provided
*/
#include "ngspice/ngspice.h"
#include "ngspice/smpdefs.h"
#include "ngspice/cktdefs.h"
#include "vdmosdefs.h"
#include "ngspice/sperror.h"
#include "ngspice/suffix.h"
int
VDMOSsLoad(GENmodel *inModel, CKTcircuit *ckt)
{
VDMOSmodel *model = (VDMOSmodel *)inModel;
VDMOSinstance *here;
double SaveState[44];
int save_mode;
int i;
int iparmno;
int error;
int flag;
double A0;
double DELA;
double Apert;
double DELAinv;
double gspr0;
double gspr;
double gdpr0;
double gdpr;
double cdpr0;
double cspr0;
double cd0;
double cbd0;
double cbs0;
double cd;
double cbd;
double cbs;
double DcdprDp;
double DcsprDp;
double DcbDp;
double DcdDp;
double DcbsDp;
double DcbdDp;
double DcdprmDp;
double DcsprmDp;
double qgs0;
double qgd0;
double qgb0;
double qbd0;
double qbd;
double qbs0;
double qbs;
double DqgsDp;
double DqgdDp;
double DqgbDp;
double DqbdDp;
double DqbsDp;
double Osxpgs;
double Osxpgd;
double Osxpgb;
double Osxpbd;
double Osxpbs;
double tag0;
double tag1;
double arg;
double sarg;
double sargsw;
int offset;
double EffectiveLength;
SENstruct *info;
#ifdef SENSDEBUG
printf("VDMOSsenload \n");
printf("CKTtime = %.5e\n",ckt->CKTtime);
printf("CKTorder = %d\n",ckt->CKTorder);
#endif /* SENSDEBUG */
info = ckt->CKTsenInfo;
info->SENstatus = PERTURBATION;
tag0 = ckt->CKTag[0];
tag1 = ckt->CKTag[1];
if(ckt->CKTorder == 1){
tag1 = 0;
}
/* loop through all the models */
for( ; model != NULL; model = VDMOSnextModel(model)) {
/* loop through all the instances of the model */
for (here = VDMOSinstances(model); here != NULL ;
here=VDMOSnextInstance(here)) {
#ifdef SENSDEBUG
printf("senload instance name %s\n",here->VDMOSname);
printf("gate = %d ,drain = %d, drainprm = %d\n",
here->VDMOSgNode,here->VDMOSdNode,here->VDMOSdNodePrime);
printf("source = %d , sourceprm = %d ,body = %d, senparmno = %d\n",
here->VDMOSsNode ,here->VDMOSsNodePrime,
here->VDMOSbNode,here->VDMOSsenParmNo);
#endif /* SENSDEBUG */
/* save the unperturbed values in the state vector */
for(i=0; i <= 16; i++){
*(SaveState + i) = *(ckt->CKTstate0 + here->VDMOSstates + i);
}
*(SaveState + 17) = here->VDMOSsourceConductance;
*(SaveState + 18) = here->VDMOSdrainConductance;
*(SaveState + 19) = here->VDMOScd;
*(SaveState + 20) = here->VDMOScbs;
*(SaveState + 21) = here->VDMOScbd;
*(SaveState + 22) = here->VDMOSgmbs;
*(SaveState + 23) = here->VDMOSgm;
*(SaveState + 24) = here->VDMOSgds;
*(SaveState + 25) = here->VDMOSgbd;
*(SaveState + 26) = here->VDMOSgbs;
*(SaveState + 27) = here->VDMOScapbd;
*(SaveState + 28) = here->VDMOScapbs;
*(SaveState + 29) = here->VDMOSCbd;
*(SaveState + 30) = here->VDMOSCbdsw;
*(SaveState + 31) = here->VDMOSCbs;
*(SaveState + 32) = here->VDMOSCbssw;
*(SaveState + 33) = here->VDMOSf2d;
*(SaveState + 34) = here->VDMOSf3d;
*(SaveState + 35) = here->VDMOSf4d;
*(SaveState + 36) = here->VDMOSf2s;
*(SaveState + 37) = here->VDMOSf3s;
*(SaveState + 38) = here->VDMOSf4s;
*(SaveState + 39) = here->VDMOScgs;
*(SaveState + 40) = here->VDMOScgd;
*(SaveState + 41) = here->VDMOScgb;
*(SaveState + 42) = here->VDMOSvdsat;
*(SaveState + 43) = here->VDMOSvon;
save_mode = here->VDMOSmode;
if(here->VDMOSsenParmNo == 0) goto next1;
#ifdef SENSDEBUG
printf("without perturbation \n");
printf("gbd =%.5e\n",here->VDMOSgbd);
printf("satCur =%.5e\n",here->VDMOStSatCur);
printf("satCurDens =%.5e\n",here->VDMOStSatCurDens);
printf("vbd =%.5e\n",*(ckt->CKTstate0 + here->VDMOSvbd));
#endif /* SENSDEBUG */
cdpr0= here->VDMOScd;
cspr0= -(here->VDMOScd + here->VDMOScbd + here->VDMOScbs);
if((info->SENmode == TRANSEN) &&
(ckt->CKTmode & MODEINITTRAN)){
qgs0 = *(ckt->CKTstate1 + here->VDMOSqgs);
qgd0 = *(ckt->CKTstate1 + here->VDMOSqgd);
qgb0 = *(ckt->CKTstate1 + here->VDMOSqgb);
}
else{
qgs0 = *(ckt->CKTstate0 + here->VDMOSqgs);
qgd0 = *(ckt->CKTstate0 + here->VDMOSqgd);
qgb0 = *(ckt->CKTstate0 + here->VDMOSqgb);
}
here->VDMOSsenPertFlag = ON;
error = VDMOSload((GENmodel*)model,ckt);
if(error) return(error);
cd0 = here->VDMOScd ;
cbd0 = here->VDMOScbd ;
cbs0 = here->VDMOScbs ;
gspr0= here->VDMOSsourceConductance ;
gdpr0= here->VDMOSdrainConductance ;
qbs0 = *(ckt->CKTstate0 + here->VDMOSqbs);
qbd0 = *(ckt->CKTstate0 + here->VDMOSqbd);
for( flag = 0 ; flag <= 1 ; flag++){
if(here->VDMOSsens_l == 0)
if(flag == 0) goto next2;
if(here->VDMOSsens_w == 0)
if(flag == 1) goto next2;
if(flag == 0){
A0 = here->VDMOSl;
DELA = info->SENpertfac * A0;
DELAinv = 1.0/DELA;
Apert = A0 + DELA;
here->VDMOSl = Apert;
}
else{
A0 = here->VDMOSw;
DELA = info->SENpertfac * A0;
DELAinv = 1.0/DELA;
Apert = A0 + DELA;
here->VDMOSw = Apert;
here->VDMOSdrainArea *= (1 + info->SENpertfac);
here->VDMOSsourceArea *= (1 + info->SENpertfac);
here->VDMOSCbd *= (1 + info->SENpertfac);
here->VDMOSCbs *= (1 + info->SENpertfac);
if(here->VDMOSdrainPerimiter){
here->VDMOSCbdsw += here->VDMOSCbdsw *
DELA/here->VDMOSdrainPerimiter;
}
if(here->VDMOSsourcePerimiter){
here->VDMOSCbssw += here->VDMOSCbssw *
DELA/here->VDMOSsourcePerimiter;
}
if(*(ckt->CKTstate0 + here->VDMOSvbd) >=
here->VDMOStDepCap){
arg = 1-model->VDMOSfwdCapDepCoeff;
sarg = exp( (-model->VDMOSbulkJctBotGradingCoeff) *
log(arg) );
sargsw = exp( (-model->VDMOSbulkJctSideGradingCoeff) *
log(arg) );
here->VDMOSf2d = here->VDMOSCbd*
(1-model->VDMOSfwdCapDepCoeff*
(1+model->VDMOSbulkJctBotGradingCoeff))* sarg/arg
+ here->VDMOSCbdsw*(1-model->VDMOSfwdCapDepCoeff*
(1+model->VDMOSbulkJctSideGradingCoeff))*
sargsw/arg;
here->VDMOSf3d = here->VDMOSCbd *
model->VDMOSbulkJctBotGradingCoeff * sarg/arg/
here->VDMOStBulkPot
+ here->VDMOSCbdsw *
model->VDMOSbulkJctSideGradingCoeff * sargsw/arg/
here->VDMOStBulkPot;
here->VDMOSf4d = here->VDMOSCbd*
here->VDMOStBulkPot*(1-arg*sarg)/
(1-model->VDMOSbulkJctBotGradingCoeff)
+ here->VDMOSCbdsw*here->VDMOStBulkPot*
(1-arg*sargsw)/
(1-model->VDMOSbulkJctSideGradingCoeff)
-here->VDMOSf3d/2*
(here->VDMOStDepCap*here->VDMOStDepCap)
-here->VDMOStDepCap * here->VDMOSf2d;
}
if(*(ckt->CKTstate0 + here->VDMOSvbs) >=
here->VDMOStDepCap){
arg = 1-model->VDMOSfwdCapDepCoeff;
sarg = exp( (-model->VDMOSbulkJctBotGradingCoeff) *
log(arg) );
sargsw = exp( (-model->VDMOSbulkJctSideGradingCoeff) *
log(arg) );
here->VDMOSf2s = here->VDMOSCbs*
(1-model->VDMOSfwdCapDepCoeff*
(1+model->VDMOSbulkJctBotGradingCoeff))* sarg/arg
+ here->VDMOSCbssw*(1-model->VDMOSfwdCapDepCoeff*
(1+model->VDMOSbulkJctSideGradingCoeff))*
sargsw/arg;
here->VDMOSf3s = here->VDMOSCbs *
model->VDMOSbulkJctBotGradingCoeff * sarg/arg/
here->VDMOStBulkPot
+ here->VDMOSCbssw *
model->VDMOSbulkJctSideGradingCoeff * sargsw/arg/
here->VDMOStBulkPot;
here->VDMOSf4s = here->VDMOSCbs*
here->VDMOStBulkPot*(1-arg*sarg)/
(1-model->VDMOSbulkJctBotGradingCoeff)
+ here->VDMOSCbssw*here->VDMOStBulkPot*
(1-arg*sargsw)/
(1-model->VDMOSbulkJctSideGradingCoeff)
-here->VDMOSf3s/2*
(here->VDMOStDepCap*here->VDMOStDepCap)
-here->VDMOStDepCap * here->VDMOSf2s;
}
here->VDMOSdrainConductance *= Apert/A0;
here->VDMOSsourceConductance *= Apert/A0;
}
#ifdef SENSDEBUG
if(flag == 0)
printf("perturbation of l\n");
if(flag == 1)
printf("perturbation of w\n");
#endif /* SENSDEBUG */
error = VDMOSload((GENmodel*)model,ckt);
if(error) return(error);
if(flag == 0){
here->VDMOSl = A0;
}
else{
here->VDMOSw = A0;
here->VDMOSdrainArea /= (1 + info->SENpertfac);
here->VDMOSsourceArea /= (1 + info->SENpertfac);
here->VDMOSdrainConductance *= A0/Apert;
here->VDMOSsourceConductance *= A0/Apert;
}
cd = here->VDMOScd ;
cbd = here->VDMOScbd ;
cbs = here->VDMOScbs ;
gspr= here->VDMOSsourceConductance ;
gdpr= here->VDMOSdrainConductance ;
DcdDp = (cd - cd0) * DELAinv;
DcbsDp = (cbs - cbs0) * DELAinv;
DcbdDp = (cbd - cbd0) * DELAinv;
DcbDp = ( DcbsDp + DcbdDp );
DcdprDp = 0;
DcsprDp = 0;
if(here->VDMOSdNode != here->VDMOSdNodePrime)
if(gdpr0) DcdprDp = cdpr0 * (gdpr - gdpr0)/gdpr0 * DELAinv;
if(here->VDMOSsNode != here->VDMOSsNodePrime)
if(gspr0) DcsprDp = cspr0 * (gspr - gspr0)/gspr0 * DELAinv;
DcdprmDp = ( - DcdprDp + DcdDp);
DcsprmDp = ( - DcbsDp - DcdDp - DcbdDp - DcsprDp);
if(flag == 0){
EffectiveLength = here->VDMOSl
- 2*model->VDMOSlatDiff;
if(EffectiveLength == 0){
DqgsDp = 0;
DqgdDp = 0;
DqgbDp = 0;
}
else{
DqgsDp = model->VDMOStype * qgs0 / EffectiveLength;
DqgdDp = model->VDMOStype * qgd0 / EffectiveLength;
DqgbDp = model->VDMOStype * qgb0 / EffectiveLength;
}
}
else{
DqgsDp = model->VDMOStype * qgs0 / here->VDMOSw;
DqgdDp = model->VDMOStype * qgd0 / here->VDMOSw;
DqgbDp = model->VDMOStype * qgb0 / here->VDMOSw;
}
qbd = *(ckt->CKTstate0 + here->VDMOSqbd);
qbs = *(ckt->CKTstate0 + here->VDMOSqbs);
DqbsDp = model->VDMOStype * (qbs - qbs0)*DELAinv;
DqbdDp = model->VDMOStype * (qbd - qbd0)*DELAinv;
if(flag == 0){
*(here->VDMOSdphigs_dl) = DqgsDp;
*(here->VDMOSdphigd_dl) = DqgdDp;
*(here->VDMOSdphibs_dl) = DqbsDp;
*(here->VDMOSdphibd_dl) = DqbdDp;
*(here->VDMOSdphigb_dl) = DqgbDp;
}
else{
*(here->VDMOSdphigs_dw) = DqgsDp;
*(here->VDMOSdphigd_dw) = DqgdDp;
*(here->VDMOSdphibs_dw) = DqbsDp;
*(here->VDMOSdphibd_dw) = DqbdDp;
*(here->VDMOSdphigb_dw) = DqgbDp;
}
#ifdef SENSDEBUG
printf("CKTag[0]=%.7e,CKTag[1]=%.7e,flag= %d\n",
ckt->CKTag[0],ckt->CKTag[1],flag);
printf("cd0 = %.7e ,cd = %.7e,\n",cd0,cd);
printf("cbs0 = %.7e ,cbs = %.7e,\n",cbs0,cbs);
printf("cbd0 = %.7e ,cbd = %.7e,\n",cbd0,cbd);
printf("DcdprmDp = %.7e,\n",DcdprmDp);
printf("DcsprmDp = %.7e,\n",DcsprmDp);
printf("DcdprDp = %.7e,\n",DcdprDp);
printf("DcsprDp = %.7e,\n",DcsprDp);
printf("qgs0 = %.7e \n",qgs0);
printf("qgd0 = %.7e \n",qgd0);
printf("qgb0 = %.7e \n",qgb0);
printf("qbs0 = %.7e ,qbs = %.7e,\n",qbs0,qbs);
printf("qbd0 = %.7e ,qbd = %.7e,\n",qbd0,qbd);
printf("DqgsDp = %.7e \n",DqgsDp);
printf("DqgdDp = %.7e \n",DqgdDp);
printf("DqgbDp = %.7e \n",DqgbDp);
printf("DqbsDp = %.7e \n",DqbsDp);
printf("DqbdDp = %.7e \n",DqbdDp);
printf("EffectiveLength = %.7e \n",EffectiveLength);
printf("tdepCap = %.7e \n",here->VDMOStDepCap);
printf("\n");
#endif /* SENSDEBUG*/
if((info->SENmode == TRANSEN) &&
(ckt->CKTmode & MODEINITTRAN))
goto next2;
/*
* load RHS matrix
*/
if(flag == 0){
*(info->SEN_RHS[here->VDMOSbNode] + here->VDMOSsenParmNo) -=
model->VDMOStype * DcbDp;
*(info->SEN_RHS[here->VDMOSdNode] + here->VDMOSsenParmNo) -=
model->VDMOStype * DcdprDp;
*(info->SEN_RHS[here->VDMOSdNodePrime] +
here->VDMOSsenParmNo) -= model->VDMOStype * DcdprmDp;
*(info->SEN_RHS[here->VDMOSsNode] + here->VDMOSsenParmNo) -=
model->VDMOStype * DcsprDp;
*(info->SEN_RHS[here->VDMOSsNodePrime] +
here->VDMOSsenParmNo) -= model->VDMOStype * DcsprmDp;
}
else{
offset = here->VDMOSsens_l;
*(info->SEN_RHS[here->VDMOSbNode] + here->VDMOSsenParmNo +
offset) -= model->VDMOStype * DcbDp;
*(info->SEN_RHS[here->VDMOSdNode] + here->VDMOSsenParmNo +
offset) -= model->VDMOStype * DcdprDp;
*(info->SEN_RHS[here->VDMOSdNodePrime] + here->VDMOSsenParmNo
+ offset) -= model->VDMOStype * DcdprmDp;
*(info->SEN_RHS[here->VDMOSsNode] + here->VDMOSsenParmNo +
offset) -= model->VDMOStype * DcsprDp;
*(info->SEN_RHS[here->VDMOSsNodePrime] + here->VDMOSsenParmNo
+ offset) -= model->VDMOStype * DcsprmDp;
}
#ifdef SENSDEBUG
printf("after loading\n");
if(flag == 0){
printf("DcbDp=%.7e\n",
*(info->SEN_RHS[here->VDMOSbNode] +
here->VDMOSsenParmNo));
printf("DcdprDp=%.7e\n",
*(info->SEN_RHS[here->VDMOSdNode] +
here->VDMOSsenParmNo));
printf("DcsprDp=%.7e\n",
*(info->SEN_RHS[here->VDMOSsNode] +
here->VDMOSsenParmNo));
printf("DcdprmDp=%.7e\n",
*(info->SEN_RHS[here->VDMOSdNodePrime] +
here->VDMOSsenParmNo));
printf("DcsprmDp=%.7e\n",
*(info->SEN_RHS[here->VDMOSsNodePrime] +
here->VDMOSsenParmNo));
printf("\n");
}
else{
printf("DcbDp=%.7e\n",
*(info->SEN_RHS[here->VDMOSbNode] +
here->VDMOSsenParmNo + here->VDMOSsens_l));
printf("DcdprDp=%.7e\n",
*(info->SEN_RHS[here->VDMOSdNode] +
here->VDMOSsenParmNo + here->VDMOSsens_l));
printf("DcsprDp=%.7e\n",
*(info->SEN_RHS[here->VDMOSsNode] +
here->VDMOSsenParmNo + here->VDMOSsens_l));
printf("DcdprmDp=%.7e\n",
*(info->SEN_RHS[here->VDMOSdNodePrime] +
here->VDMOSsenParmNo + here->VDMOSsens_l));
printf("DcsprmDp=%.7e\n",
*(info->SEN_RHS[here->VDMOSsNodePrime] +
here->VDMOSsenParmNo + here->VDMOSsens_l));
}
#endif /* SENSDEBUG*/
next2:
;
}
next1:
if((info->SENmode == DCSEN) ||
(ckt->CKTmode&MODETRANOP) ) goto restore;
if((info->SENmode == TRANSEN) &&
(ckt->CKTmode & MODEINITTRAN)) goto restore;
for(iparmno = 1;iparmno<=info->SENparms;iparmno++){
#ifdef SENSDEBUG
printf("after conductive currents\n");
printf("iparmno = %d\n",iparmno);
printf("DcbDp=%.7e\n",
*(info->SEN_RHS[here->VDMOSbNode] + iparmno));
printf("DcdprDp=%.7e\n",
*(info->SEN_RHS[here->VDMOSdNode] + iparmno));
printf("DcdprmDp=%.7e\n",
*(info->SEN_RHS[here->VDMOSdNodePrime] + iparmno));
printf("DcsprDp=%.7e\n",
*(info->SEN_RHS[here->VDMOSsNode] + iparmno));
printf("DcsprmDp=%.7e\n",
*(info->SEN_RHS[here->VDMOSsNodePrime] + iparmno));
printf("\n");
#endif /* SENSDEBUG */
Osxpgs = tag0 * *(ckt->CKTstate1 + here->VDMOSsensxpgs +
10*(iparmno - 1))
+ tag1 * *(ckt->CKTstate1 + here->VDMOSsensxpgs +
10*(iparmno - 1) + 1);
Osxpgd = tag0 * *(ckt->CKTstate1 + here->VDMOSsensxpgd +
10*(iparmno - 1))
+ tag1 * *(ckt->CKTstate1 + here->VDMOSsensxpgd +
10*(iparmno - 1) + 1);
Osxpbs = tag0 * *(ckt->CKTstate1 + here->VDMOSsensxpbs +
10*(iparmno - 1))
+ tag1 * *(ckt->CKTstate1 + here->VDMOSsensxpbs +
10*(iparmno - 1) + 1);
Osxpbd =tag0 * *(ckt->CKTstate1 + here->VDMOSsensxpbd +
10*(iparmno - 1))
+ tag1 * *(ckt->CKTstate1 + here->VDMOSsensxpbd +
10*(iparmno - 1) + 1);
Osxpgb = tag0 * *(ckt->CKTstate1 + here->VDMOSsensxpgb +
10*(iparmno - 1))
+ tag1 * *(ckt->CKTstate1 + here->VDMOSsensxpgb +
10*(iparmno - 1) + 1);
#ifdef SENSDEBUG
printf("iparmno=%d\n",iparmno);
printf("sxpgs=%.7e,sdgs=%.7e\n",
*(ckt->CKTstate1 + here->VDMOSsensxpgs +
10*(iparmno - 1)), *(ckt->CKTstate1 +
here->VDMOSsensxpgs + 10*(iparmno - 1) + 1));
printf("sxpgd=%.7e,sdgd=%.7e\n",
*(ckt->CKTstate1 + here->VDMOSsensxpgd +
10*(iparmno - 1)), *(ckt->CKTstate1 +
here->VDMOSsensxpgd + 10*(iparmno - 1) + 1));
printf("sxpbs=%.7e,sdbs=%.7e\n",
*(ckt->CKTstate1 + here->VDMOSsensxpbs +
10*(iparmno - 1)), *(ckt->CKTstate1 +
here->VDMOSsensxpbs + 10*(iparmno - 1) + 1));
printf("sxpbd=%.7e,sdbd=%.7e\n",
*(ckt->CKTstate1 + here->VDMOSsensxpbd +
10*(iparmno - 1)), *(ckt->CKTstate1 +
here->VDMOSsensxpbd + 10*(iparmno - 1) + 1));
printf("sxpgb=%.7e,sdgb=%.7e\n",
*(ckt->CKTstate1 + here->VDMOSsensxpgb +
10*(iparmno - 1)), *(ckt->CKTstate1 +
here->VDMOSsensxpgb + 10*(iparmno - 1) + 1));
printf("before loading DqDp\n");
printf("Osxpgs=%.7e,Osxpgd=%.7e\n",Osxpgs,Osxpgd);
printf("Osxpbs=%.7e,Osxpbd=%.7e,Osxpgb=%.7e\n",
Osxpbs,Osxpbd,Osxpgb);
printf("\n");
#endif /* SENSDEBUG */
if(here->VDMOSsens_l && (iparmno == here->VDMOSsenParmNo)){
Osxpgs -= tag0 * *(here->VDMOSdphigs_dl);
Osxpgd -= tag0 * *(here->VDMOSdphigd_dl);
Osxpbs -= tag0 * *(here->VDMOSdphibs_dl);
Osxpbd -= tag0 * *(here->VDMOSdphibd_dl);
Osxpgb -= tag0 * *(here->VDMOSdphigb_dl);
}
if(here->VDMOSsens_w &&
(iparmno == (here->VDMOSsenParmNo + here->VDMOSsens_l))){
Osxpgs -= tag0 * *(here->VDMOSdphigs_dw);
Osxpgd -= tag0 * *(here->VDMOSdphigd_dw);
Osxpbs -= tag0 * *(here->VDMOSdphibs_dw);
Osxpbd -= tag0 * *(here->VDMOSdphibd_dw);
Osxpgb -= tag0 * *(here->VDMOSdphigb_dw);
}
#ifdef SENSDEBUG
printf("after loading DqDp\n");
printf("DqgsDp=%.7e",DqgsDp);
printf("Osxpgs=%.7e,Osxpgd=%.7e\n",Osxpgs,Osxpgd);
printf("Osxpbs=%.7e,Osxpbd=%.7e,Osxpgb=%.7e\n",
Osxpbs,Osxpbd,Osxpgb);
#endif /* SENSDEBUG */
*(info->SEN_RHS[here->VDMOSbNode] + iparmno) +=
Osxpbs + Osxpbd -Osxpgb;
*(info->SEN_RHS[here->VDMOSgNode] + iparmno) +=
Osxpgs + Osxpgd + Osxpgb;
*(info->SEN_RHS[here->VDMOSdNodePrime] + iparmno) -=
Osxpgd + Osxpbd ;
*(info->SEN_RHS[here->VDMOSsNodePrime] + iparmno) -=
Osxpgs + Osxpbs;
#ifdef SENSDEBUG
printf("after capacitive currents\n");
printf("DcbDp=%.7e\n",
*(info->SEN_RHS[here->VDMOSbNode] + iparmno));
printf("DcdprDp=%.7e\n",
*(info->SEN_RHS[here->VDMOSdNode] + iparmno));
printf("DcdprmDp=%.7e\n",
*(info->SEN_RHS[here->VDMOSdNodePrime] + iparmno));
printf("DcsprDp=%.7e\n",
*(info->SEN_RHS[here->VDMOSsNode] + iparmno));
printf("DcsprmDp=%.7e\n",
*(info->SEN_RHS[here->VDMOSsNodePrime] + iparmno));
#endif /* SENSDEBUG */
}
restore: /* put the unperturbed values back into the state vector */
for(i=0; i <= 16; i++)
*(ckt->CKTstate0 + here->VDMOSstates + i) = *(SaveState + i);
here->VDMOSsourceConductance = *(SaveState + 17) ;
here->VDMOSdrainConductance = *(SaveState + 18) ;
here->VDMOScd = *(SaveState + 19) ;
here->VDMOScbs = *(SaveState + 20) ;
here->VDMOScbd = *(SaveState + 21) ;
here->VDMOSgmbs = *(SaveState + 22) ;
here->VDMOSgm = *(SaveState + 23) ;
here->VDMOSgds = *(SaveState + 24) ;
here->VDMOSgbd = *(SaveState + 25) ;
here->VDMOSgbs = *(SaveState + 26) ;
here->VDMOScapbd = *(SaveState + 27) ;
here->VDMOScapbs = *(SaveState + 28) ;
here->VDMOSCbd = *(SaveState + 29) ;
here->VDMOSCbdsw = *(SaveState + 30) ;
here->VDMOSCbs = *(SaveState + 31) ;
here->VDMOSCbssw = *(SaveState + 32) ;
here->VDMOSf2d = *(SaveState + 33) ;
here->VDMOSf3d = *(SaveState + 34) ;
here->VDMOSf4d = *(SaveState + 35) ;
here->VDMOSf2s = *(SaveState + 36) ;
here->VDMOSf3s = *(SaveState + 37) ;
here->VDMOSf4s = *(SaveState + 38) ;
here->VDMOScgs = *(SaveState + 39) ;
here->VDMOScgd = *(SaveState + 40) ;
here->VDMOScgb = *(SaveState + 41) ;
here->VDMOSvdsat = *(SaveState + 42) ;
here->VDMOSvon = *(SaveState + 43) ;
here->VDMOSmode = save_mode ;
here->VDMOSsenPertFlag = OFF;
}
}
info->SENstatus = NORMAL;
#ifdef SENSDEBUG
printf("VDMOSsenload end\n");
#endif /* SENSDEBUG */
return(OK);
}

68
src/spicelib/devices/vdmos/vdmossprt.c
View File

@ -0,0 +1,68 @@
/**********
Copyright 1990 Regents of the University of California. All rights reserved.
Author: 1985 Thomas L. Quarles
Modified: 2000 AlansFixes
This function is obsolete (was used by an old sensitivity analysis)
**********/
/* Pretty print the sensitivity info for all
* the VDMOS devices in the circuit.
*/
#include "ngspice/ngspice.h"
#include "ngspice/smpdefs.h"
#include "ngspice/cktdefs.h"
#include "vdmosdefs.h"
#include "ngspice/sperror.h"
#include "ngspice/suffix.h"
void
VDMOSsPrint(GENmodel *inModel, CKTcircuit *ckt)
/* Pretty print the sensitivity info for all the VDMOS
* devices in the circuit.
*/
{
VDMOSmodel *model = (VDMOSmodel *)inModel;
VDMOSinstance *here;
printf("LEVEL 1 MOSFETS-----------------\n");
/* loop through all the VDMOS models */
for( ; model != NULL; model = VDMOSnextModel(model)) {
printf("Model name:%s\n",model->VDMOSmodName);
/* loop through all the instances of the model */
for (here = VDMOSinstances(model); here != NULL ;
here=VDMOSnextInstance(here)) {
printf(" Instance name:%s\n",here->VDMOSname);
printf(" Drain, Gate , Source nodes: %s, %s ,%s\n",
CKTnodName(ckt,here->VDMOSdNode),CKTnodName(ckt,here->VDMOSgNode),
CKTnodName(ckt,here->VDMOSsNode));
printf(" Multiplier: %g ",here->VDMOSm);
printf(here->VDMOSmGiven ? "(specified)\n" : "(default)\n");
printf(" Length: %g ",here->VDMOSl);
printf(here->VDMOSlGiven ? "(specified)\n" : "(default)\n");
printf(" Width: %g ",here->VDMOSw);
printf(here->VDMOSwGiven ? "(specified)\n" : "(default)\n");
if(here->VDMOSsens_l == 1){
printf(" VDMOSsenParmNo:l = %d ",here->VDMOSsenParmNo);
}
else{
printf(" VDMOSsenParmNo:l = 0 ");
}
if(here->VDMOSsens_w == 1){
printf(" w = %d \n",here->VDMOSsenParmNo + here->VDMOSsens_l);
}
else{
printf(" w = 0 \n");
}
}
}
}

50
src/spicelib/devices/vdmos/vdmossset.c
View File

@ -0,0 +1,50 @@
/**********
Copyright 1990 Regents of the University of California. All rights reserved.
Author: 1985 Thomas L. Quarles
This function is obsolete (was used by an old sensitivity analysis)
**********/
#include "ngspice/ngspice.h"
#include "ngspice/smpdefs.h"
#include "ngspice/cktdefs.h"
#include "vdmosdefs.h"
#include "ngspice/sperror.h"
#include "ngspice/suffix.h"
int
VDMOSsSetup(SENstruct *info, GENmodel *inModel)
/* loop through all the devices and
* allocate parameter #s to design parameters
*/
{
VDMOSmodel *model = (VDMOSmodel *)inModel;
VDMOSinstance *here;
/* loop through all the models */
for( ; model != NULL; model = VDMOSnextModel(model)) {
/* loop through all the instances of the model */
for (here = VDMOSinstances(model); here != NULL ;
here=VDMOSnextInstance(here)) {
if(here->VDMOSsenParmNo){
if((here->VDMOSsens_l)&&(here->VDMOSsens_w)){
here->VDMOSsenParmNo = ++(info->SENparms);
++(info->SENparms);/* MOS has two design parameters */
}
else{
here->VDMOSsenParmNo = ++(info->SENparms);
}
}
if((here->VDMOSsens = TMALLOC(double, 70)) == NULL) {
return(E_NOMEM);
}
here->VDMOSsenPertFlag = OFF;
}
}
return(OK);
}

183
src/spicelib/devices/vdmos/vdmossupd.c
View File

@ -0,0 +1,183 @@
/**********
Copyright 1990 Regents of the University of California. All rights reserved.
Author: 1985 Thomas L. Quarles
This function is obsolete (was used by an old sensitivity analysis)
**********/
#include "ngspice/ngspice.h"
#include "ngspice/smpdefs.h"
#include "ngspice/cktdefs.h"
#include "vdmosdefs.h"
#include "ngspice/sperror.h"
#include "ngspice/suffix.h"
/* update the charge sensitivities and their derivatives */
int
VDMOSsUpdate(GENmodel *inModel, CKTcircuit *ckt)
{
VDMOSmodel *model = (VDMOSmodel *)inModel;
VDMOSinstance *here;
int iparmno;
double sb;
double sg;
double sdprm;
double ssprm;
double sxpgs;
double sxpgd;
double sxpbs;
double sxpbd;
double sxpgb;
double dummy1;
double dummy2;
SENstruct *info;
if(ckt->CKTtime == 0) return(OK);
info = ckt->CKTsenInfo;
#ifdef SENSDEBUG
printf("VDMOSsenupdate\n");
printf("CKTtime = %.5e\n",ckt->CKTtime);
#endif /* SENSDEBUG */
sxpgs = 0;
sxpgd = 0;
sxpbs = 0;
sxpbd = 0;
sxpgb = 0;
dummy1 = 0;
dummy2 = 0;
/* loop through all the VDMOS models */
for( ; model != NULL; model = VDMOSnextModel(model)) {
/* loop through all the instances of the model */
for (here = VDMOSinstances(model); here != NULL ;
here=VDMOSnextInstance(here)) {
#ifdef SENSDEBUG
printf("senupdate instance name %s\n",here->VDMOSname);
printf("before loading\n");
printf("CKTag[0] = %.2e,CKTag[1] = %.2e\n",
ckt->CKTag[0],ckt->CKTag[1]);
printf("capgs = %.7e\n",here->VDMOScgs);
printf("capgd = %.7e\n",here->VDMOScgd);
printf("capgb = %.7e\n",here->VDMOScgb);
printf("capbs = %.7e\n",here->VDMOScapbs);
printf("capbd = %.7e\n",here->VDMOScapbd);
#endif /* SENSDEBUG */
for(iparmno = 1;iparmno<=info->SENparms;iparmno++){
sb = *(info->SEN_Sap[here->VDMOSbNode] + iparmno);
sg = *(info->SEN_Sap[here->VDMOSgNode] + iparmno);
ssprm = *(info->SEN_Sap[here->VDMOSsNodePrime] + iparmno);
sdprm = *(info->SEN_Sap[here->VDMOSdNodePrime] + iparmno);
#ifdef SENSDEBUG
printf("iparmno = %d\n",iparmno);
printf("sb = %.7e,sg = %.7e\n",sb,sg);
printf("ssprm = %.7e,sdprm = %.7e\n",ssprm,sdprm);
#endif /* SENSDEBUG */
sxpgs = (sg - ssprm) * here->VDMOScgs ;
sxpgd = (sg - sdprm) * here->VDMOScgd ;
sxpgb = (sg - sb) * here->VDMOScgb ;
sxpbs = (sb - ssprm) * here->VDMOScapbs ;
sxpbd = (sb - sdprm) * here->VDMOScapbd ;
if(here->VDMOSsens_l && (iparmno == here->VDMOSsenParmNo)){
sxpgs += *(here->VDMOSdphigs_dl);
sxpgd += *(here->VDMOSdphigd_dl);
sxpbs += *(here->VDMOSdphibs_dl);
sxpbd += *(here->VDMOSdphibd_dl);
sxpgb += *(here->VDMOSdphigb_dl);
}
if(here->VDMOSsens_w &&
(iparmno == (here->VDMOSsenParmNo+here->VDMOSsens_l))){
sxpgs += *(here->VDMOSdphigs_dw);
sxpgd += *(here->VDMOSdphigd_dw);
sxpbs += *(here->VDMOSdphibs_dw);
sxpbd += *(here->VDMOSdphibd_dw);
sxpgb += *(here->VDMOSdphigb_dw);
}
if(ckt->CKTmode & MODEINITTRAN) {
*(ckt->CKTstate1 + here->VDMOSsensxpgs +
10 * (iparmno - 1)) = sxpgs;
*(ckt->CKTstate1 + here->VDMOSsensxpgd +
10 * (iparmno - 1)) = sxpgd;
*(ckt->CKTstate1 + here->VDMOSsensxpbs +
10 * (iparmno - 1)) = sxpbs;
*(ckt->CKTstate1 + here->VDMOSsensxpbd +
10 * (iparmno - 1)) = sxpbd;
*(ckt->CKTstate1 + here->VDMOSsensxpgb +
10 * (iparmno - 1)) = sxpgb;
*(ckt->CKTstate1 + here->VDMOSsensxpgs +
10 * (iparmno - 1) + 1) = 0;
*(ckt->CKTstate1 + here->VDMOSsensxpgd +
10 * (iparmno - 1) + 1) = 0;
*(ckt->CKTstate1 + here->VDMOSsensxpbs +
10 * (iparmno - 1) + 1) = 0;
*(ckt->CKTstate1 + here->VDMOSsensxpbd +
10 * (iparmno - 1) + 1) = 0;
*(ckt->CKTstate1 + here->VDMOSsensxpgb +
10 * (iparmno - 1) + 1) = 0;
goto next;
}
*(ckt->CKTstate0 + here->VDMOSsensxpgs +
10 * (iparmno - 1)) = sxpgs;
*(ckt->CKTstate0 + here->VDMOSsensxpgd +
10 * (iparmno - 1)) = sxpgd;
*(ckt->CKTstate0 + here->VDMOSsensxpbs +
10 * (iparmno - 1)) = sxpbs;
*(ckt->CKTstate0 + here->VDMOSsensxpbd +
10 * (iparmno - 1)) = sxpbd;
*(ckt->CKTstate0 + here->VDMOSsensxpgb +
10 * (iparmno - 1)) = sxpgb;
NIintegrate(ckt,&dummy1,&dummy2,here->VDMOScgs,
here->VDMOSsensxpgs + 10*(iparmno -1));
NIintegrate(ckt,&dummy1,&dummy2,here->VDMOScgd,
here->VDMOSsensxpgd + 10*(iparmno -1));
NIintegrate(ckt,&dummy1,&dummy2,here->VDMOScgb,
here->VDMOSsensxpgb + 10*(iparmno -1));
NIintegrate(ckt,&dummy1,&dummy2,here->VDMOScapbs,
here->VDMOSsensxpbs + 10*(iparmno -1));
NIintegrate(ckt,&dummy1,&dummy2,here->VDMOScapbd,
here->VDMOSsensxpbd + 10*(iparmno -1));
next:
;
#ifdef SENSDEBUG
printf("after loading\n");
printf("sxpgs = %.7e,sdotxpgs = %.7e\n",
sxpgs,*(ckt->CKTstate0 + here->VDMOSsensxpgs +
10 * (iparmno - 1) + 1));
printf("sxpgd = %.7e,sdotxpgd = %.7e\n",
sxpgd,*(ckt->CKTstate0 + here->VDMOSsensxpgd +
10 * (iparmno - 1) + 1));
printf("sxpgb = %.7e,sdotxpgb = %.7e\n",
sxpgb,*(ckt->CKTstate0 + here->VDMOSsensxpgb +
10 * (iparmno - 1) + 1));
printf("sxpbs = %.7e,sdotxpbs = %.7e\n",
sxpbs,*(ckt->CKTstate0 + here->VDMOSsensxpbs +
10 * (iparmno - 1) + 1));
printf("sxpbd = %.7e,sdotxpbd = %.7e\n",
sxpbd,*(ckt->CKTstate0 + here->VDMOSsensxpbd +
10 * (iparmno - 1) + 1));
#endif /* SENSDEBUG */
}
}
}
#ifdef SENSDEBUG
printf("VDMOSsenupdate end\n");
#endif /* SENSDEBUG */
return(OK);
}

332
src/spicelib/devices/vdmos/vdmostemp.c
View File

@ -0,0 +1,332 @@
/**********
Copyright 1990 Regents of the University of California. All rights reserved.
Author: 1985 Thomas L. Quarles
Modified: 2000 AlansFixes
**********/
#include "ngspice/ngspice.h"
#include "ngspice/cktdefs.h"
#include "vdmosdefs.h"
#include "ngspice/const.h"
#include "ngspice/sperror.h"
#include "ngspice/suffix.h"
int
VDMOStemp(GENmodel *inModel, CKTcircuit *ckt)
{
VDMOSmodel *model = (VDMOSmodel *)inModel;
VDMOSinstance *here;
double egfet,egfet1;
double fact1,fact2;
double kt,kt1;
double arg1;
double ratio,ratio4;
double phio;
double pbo;
double gmanew,gmaold;
double capfact;
double pbfact1,pbfact;
double vt,vtnom;
double wkfngs;
double wkfng;
double fermig;
double fermis;
double vfb;
/* loop through all the resistor models */
for( ; model != NULL; model = VDMOSnextModel(model)) {
/* perform model defaulting */
if(!model->VDMOStnomGiven) {
model->VDMOStnom = ckt->CKTnomTemp;
}
fact1 = model->VDMOStnom/REFTEMP;
vtnom = model->VDMOStnom*CONSTKoverQ;
kt1 = CONSTboltz * model->VDMOStnom;
egfet1 = 1.16-(7.02e-4*model->VDMOStnom*model->VDMOStnom)/
(model->VDMOStnom+1108);
arg1 = -egfet1/(kt1+kt1)+1.1150877/(CONSTboltz*(REFTEMP+REFTEMP));
pbfact1 = -2*vtnom *(1.5*log(fact1)+CHARGE*arg1);
/* now model parameter preprocessing */
if (model->VDMOSphi <= 0.0) {
SPfrontEnd->IFerrorf (ERR_FATAL,
"%s: Phi is not positive.", model->VDMOSmodName);
return(E_BADPARM);
}
if(!model->VDMOSoxideThicknessGiven || model->VDMOSoxideThickness == 0) {
model->VDMOSoxideCapFactor = 0;
} else {
model->VDMOSoxideCapFactor = 3.9 * 8.854214871e-12/
model->VDMOSoxideThickness;
if(!model->VDMOStransconductanceGiven) {
if(!model->VDMOSsurfaceMobilityGiven) {
model->VDMOSsurfaceMobility=600;
}
model->VDMOStransconductance = model->VDMOSsurfaceMobility *
model->VDMOSoxideCapFactor * 1e-4 /*(m**2/cm**2)*/;
}
if(model->VDMOSsubstrateDopingGiven) {
if(model->VDMOSsubstrateDoping*1e6 /*(cm**3/m**3)*/ >1.45e16) {
if(!model->VDMOSphiGiven) {
model->VDMOSphi = 2*vtnom*
log(model->VDMOSsubstrateDoping*
1e6/*(cm**3/m**3)*//1.45e16);
model->VDMOSphi = MAX(.1,model->VDMOSphi);
}
fermis = model->VDMOStype * .5 * model->VDMOSphi;
wkfng = 3.2;
if(!model->VDMOSgateTypeGiven) model->VDMOSgateType=1;
if(model->VDMOSgateType != 0) {
fermig = model->VDMOStype *model->VDMOSgateType*.5*egfet1;
wkfng = 3.25 + .5 * egfet1 - fermig;
}
wkfngs = wkfng - (3.25 + .5 * egfet1 +fermis);
if(!model->VDMOSgammaGiven) {
model->VDMOSgamma = sqrt(2 * 11.70 * 8.854214871e-12 *
CHARGE * model->VDMOSsubstrateDoping*
1e6/*(cm**3/m**3)*/)/
model->VDMOSoxideCapFactor;
}
if(!model->VDMOSvt0Given) {
if(!model->VDMOSsurfaceStateDensityGiven)
model->VDMOSsurfaceStateDensity=0;
vfb = wkfngs -
model->VDMOSsurfaceStateDensity *
1e4 /*(cm**2/m**2)*/ *
CHARGE/model->VDMOSoxideCapFactor;
model->VDMOSvt0 = vfb + model->VDMOStype *
(model->VDMOSgamma * sqrt(model->VDMOSphi)+
model->VDMOSphi);
}
} else {
model->VDMOSsubstrateDoping = 0;
SPfrontEnd->IFerrorf (ERR_FATAL,
"%s: Nsub < Ni", model->VDMOSmodName);
return(E_BADPARM);
}
}
}
/* loop through all instances of the model */
for(here = VDMOSinstances(model); here!= NULL;
here = VDMOSnextInstance(here)) {
double czbd; /* zero voltage bulk-drain capacitance */
double czbdsw; /* zero voltage bulk-drain sidewall capacitance */
double czbs; /* zero voltage bulk-source capacitance */
double czbssw; /* zero voltage bulk-source sidewall capacitance */
double arg; /* 1 - fc */
double sarg; /* (1-fc) ^^ (-mj) */
double sargsw; /* (1-fc) ^^ (-mjsw) */
/* perform the parameter defaulting */
if(!here->VDMOSdtempGiven) {
here->VDMOSdtemp = 0.0;
}
if(!here->VDMOStempGiven) {
here->VDMOStemp = ckt->CKTtemp + here->VDMOSdtemp;
}
vt = here->VDMOStemp * CONSTKoverQ;
ratio = here->VDMOStemp/model->VDMOStnom;
fact2 = here->VDMOStemp/REFTEMP;
kt = here->VDMOStemp * CONSTboltz;
egfet = 1.16-(7.02e-4*here->VDMOStemp*here->VDMOStemp)/
(here->VDMOStemp+1108);
arg = -egfet/(kt+kt)+1.1150877/(CONSTboltz*(REFTEMP+REFTEMP));
pbfact = -2*vt *(1.5*log(fact2)+CHARGE*arg);
if(!here->VDMOSdrainAreaGiven) {
here->VDMOSdrainArea = ckt->CKTdefaultMosAD;
}
if(!here->VDMOSmGiven) {
here->VDMOSm = ckt->CKTdefaultMosM;
}
if(!here->VDMOSlGiven) {
here->VDMOSl = ckt->CKTdefaultMosL;
}
if(!here->VDMOSsourceAreaGiven) {
here->VDMOSsourceArea = ckt->CKTdefaultMosAS;
}
if(!here->VDMOSwGiven) {
here->VDMOSw = ckt->CKTdefaultMosW;
}
if(here->VDMOSl - 2 * model->VDMOSlatDiff <=0) {
SPfrontEnd->IFerrorf (ERR_WARNING,
"%s: effective channel length less than zero",
model->VDMOSmodName);
}
ratio4 = ratio * sqrt(ratio);
here->VDMOStTransconductance = model->VDMOStransconductance / ratio4;
here->VDMOStSurfMob = model->VDMOSsurfaceMobility/ratio4;
phio= (model->VDMOSphi-pbfact1)/fact1;
here->VDMOStPhi = fact2 * phio + pbfact;
here->VDMOStVbi =
model->VDMOSvt0 - model->VDMOStype *
(model->VDMOSgamma* sqrt(model->VDMOSphi))
+.5*(egfet1-egfet)
+ model->VDMOStype*.5* (here->VDMOStPhi-model->VDMOSphi);
here->VDMOStVto = here->VDMOStVbi + model->VDMOStype *
model->VDMOSgamma * sqrt(here->VDMOStPhi);
here->VDMOStSatCur = model->VDMOSjctSatCur*
exp(-egfet/vt+egfet1/vtnom);
here->VDMOStSatCurDens = model->VDMOSjctSatCurDensity *
exp(-egfet/vt+egfet1/vtnom);
pbo = (model->VDMOSbulkJctPotential - pbfact1)/fact1;
gmaold = (model->VDMOSbulkJctPotential-pbo)/pbo;
capfact = 1/(1+model->VDMOSbulkJctBotGradingCoeff*
(4e-4*(model->VDMOStnom-REFTEMP)-gmaold));
here->VDMOStCbd = model->VDMOScapBD * capfact;
here->VDMOStCbs = model->VDMOScapBS * capfact;
here->VDMOStCj = model->VDMOSbulkCapFactor * capfact;
capfact = 1/(1+model->VDMOSbulkJctSideGradingCoeff*
(4e-4*(model->VDMOStnom-REFTEMP)-gmaold));
here->VDMOStCjsw = model->VDMOSsideWallCapFactor * capfact;
here->VDMOStBulkPot = fact2 * pbo+pbfact;
gmanew = (here->VDMOStBulkPot-pbo)/pbo;
capfact = (1+model->VDMOSbulkJctBotGradingCoeff*
(4e-4*(here->VDMOStemp-REFTEMP)-gmanew));
here->VDMOStCbd *= capfact;
here->VDMOStCbs *= capfact;
here->VDMOStCj *= capfact;
capfact = (1+model->VDMOSbulkJctSideGradingCoeff*
(4e-4*(here->VDMOStemp-REFTEMP)-gmanew));
here->VDMOStCjsw *= capfact;
here->VDMOStDepCap = model->VDMOSfwdCapDepCoeff * here->VDMOStBulkPot;
if( (here->VDMOStSatCurDens == 0) ||
(here->VDMOSdrainArea == 0) ||
(here->VDMOSsourceArea == 0) ) {
here->VDMOSsourceVcrit = here->VDMOSdrainVcrit =
vt*log(vt/(CONSTroot2*here->VDMOSm*here->VDMOStSatCur));
} else {
here->VDMOSdrainVcrit =
vt * log( vt / (CONSTroot2 *
here->VDMOSm *
here->VDMOStSatCurDens * here->VDMOSdrainArea));
here->VDMOSsourceVcrit =
vt * log( vt / (CONSTroot2 *
here->VDMOSm *
here->VDMOStSatCurDens * here->VDMOSsourceArea));
}
if(model->VDMOScapBDGiven) {
czbd = here->VDMOStCbd * here->VDMOSm;
} else {
if(model->VDMOSbulkCapFactorGiven) {
czbd=here->VDMOStCj*here->VDMOSm*here->VDMOSdrainArea;
} else {
czbd=0;
}
}
if(model->VDMOSsideWallCapFactorGiven) {
czbdsw= here->VDMOStCjsw * here->VDMOSdrainPerimiter *
here->VDMOSm;
} else {
czbdsw=0;
}
arg = 1-model->VDMOSfwdCapDepCoeff;
sarg = exp( (-model->VDMOSbulkJctBotGradingCoeff) * log(arg) );
sargsw = exp( (-model->VDMOSbulkJctSideGradingCoeff) * log(arg) );
here->VDMOSCbd = czbd;
here->VDMOSCbdsw = czbdsw;
here->VDMOSf2d = czbd*(1-model->VDMOSfwdCapDepCoeff*
(1+model->VDMOSbulkJctBotGradingCoeff))* sarg/arg
+ czbdsw*(1-model->VDMOSfwdCapDepCoeff*
(1+model->VDMOSbulkJctSideGradingCoeff))*
sargsw/arg;
here->VDMOSf3d = czbd * model->VDMOSbulkJctBotGradingCoeff * sarg/arg/
here->VDMOStBulkPot
+ czbdsw * model->VDMOSbulkJctSideGradingCoeff * sargsw/arg /
here->VDMOStBulkPot;
here->VDMOSf4d = czbd*here->VDMOStBulkPot*(1-arg*sarg)/
(1-model->VDMOSbulkJctBotGradingCoeff)
+ czbdsw*here->VDMOStBulkPot*(1-arg*sargsw)/
(1-model->VDMOSbulkJctSideGradingCoeff)
-here->VDMOSf3d/2*
(here->VDMOStDepCap*here->VDMOStDepCap)
-here->VDMOStDepCap * here->VDMOSf2d;
if(model->VDMOScapBSGiven) {
czbs=here->VDMOStCbs * here->VDMOSm;
} else {
if(model->VDMOSbulkCapFactorGiven) {
czbs=here->VDMOStCj*here->VDMOSsourceArea * here->VDMOSm;
} else {
czbs=0;
}
}
if(model->VDMOSsideWallCapFactorGiven) {
czbssw = here->VDMOStCjsw * here->VDMOSsourcePerimiter *
here->VDMOSm;
} else {
czbssw=0;
}
arg = 1-model->VDMOSfwdCapDepCoeff;
sarg = exp( (-model->VDMOSbulkJctBotGradingCoeff) * log(arg) );
sargsw = exp( (-model->VDMOSbulkJctSideGradingCoeff) * log(arg) );
here->VDMOSCbs = czbs;
here->VDMOSCbssw = czbssw;
here->VDMOSf2s = czbs*(1-model->VDMOSfwdCapDepCoeff*
(1+model->VDMOSbulkJctBotGradingCoeff))* sarg/arg
+ czbssw*(1-model->VDMOSfwdCapDepCoeff*
(1+model->VDMOSbulkJctSideGradingCoeff))*
sargsw/arg;
here->VDMOSf3s = czbs * model->VDMOSbulkJctBotGradingCoeff * sarg/arg/
here->VDMOStBulkPot
+ czbssw * model->VDMOSbulkJctSideGradingCoeff * sargsw/arg /
here->VDMOStBulkPot;
here->VDMOSf4s = czbs*here->VDMOStBulkPot*(1-arg*sarg)/
(1-model->VDMOSbulkJctBotGradingCoeff)
+ czbssw*here->VDMOStBulkPot*(1-arg*sargsw)/
(1-model->VDMOSbulkJctSideGradingCoeff)
-here->VDMOSf3s/2*
(here->VDMOStDepCap*here->VDMOStDepCap)
-here->VDMOStDepCap * here->VDMOSf2s;
if(model->VDMOSdrainResistanceGiven) {
if(model->VDMOSdrainResistance != 0) {
here->VDMOSdrainConductance = here->VDMOSm /
model->VDMOSdrainResistance;
} else {
here->VDMOSdrainConductance = 0;
}
} else if (model->VDMOSsheetResistanceGiven) {
if(model->VDMOSsheetResistance != 0) {
here->VDMOSdrainConductance =
here->VDMOSm /
(model->VDMOSsheetResistance*here->VDMOSdrainSquares);
} else {
here->VDMOSdrainConductance = 0;
}
} else {
here->VDMOSdrainConductance = 0;
}
if(model->VDMOSsourceResistanceGiven) {
if(model->VDMOSsourceResistance != 0) {
here->VDMOSsourceConductance = here->VDMOSm /
model->VDMOSsourceResistance;
} else {
here->VDMOSsourceConductance = 0;
}
} else if (model->VDMOSsheetResistanceGiven) {
if ((model->VDMOSsheetResistance != 0) &&
(here->VDMOSsourceSquares != 0)) {
here->VDMOSsourceConductance =
here->VDMOSm /
(model->VDMOSsheetResistance*here->VDMOSsourceSquares);
} else {
here->VDMOSsourceConductance = 0;
}
} else {
here->VDMOSsourceConductance = 0;
}
}
}
return(OK);
}

30
src/spicelib/devices/vdmos/vdmostrun.c
View File

@ -0,0 +1,30 @@
/**********
Copyright 1990 Regents of the University of California. All rights reserved.
Author: 1985 Thomas L. Quarles
**********/
/*
*/
#include "ngspice/ngspice.h"
#include "ngspice/cktdefs.h"
#include "vdmosdefs.h"
#include "ngspice/sperror.h"
#include "ngspice/suffix.h"
int
VDMOStrunc(GENmodel *inModel, CKTcircuit *ckt, double *timeStep)
{
VDMOSmodel *model = (VDMOSmodel *)inModel;
VDMOSinstance *here;
for( ; model != NULL; model = VDMOSnextModel(model)) {
for(here=VDMOSinstances(model);here!=NULL;here = VDMOSnextInstance(here)){
CKTterr(here->VDMOSqgs,ckt,timeStep);
CKTterr(here->VDMOSqgd,ckt,timeStep);
CKTterr(here->VDMOSqgb,ckt,timeStep);
}
}
return(OK);
}
Write Preview
Loading…
Cancel
Save