From 5449731860dff4cae6686d41b824b5555be79d31 Mon Sep 17 00:00:00 2001 From: rlar Date: Tue, 13 Dec 2011 17:40:29 +0000 Subject: [PATCH] copy old amds .va files to a new directory `adms3va' --- ChangeLog | 19 + src/spicelib/devices/adms/ekv/adms3va/ekv.va | 661 +++++ .../devices/adms/hicum0/adms3va/hicum0.va | 851 ++++++ .../devices/adms/hicum2/adms3va/hicum2.va | 1658 ++++++++++++ .../adms/mextram/adms3va/COPYRIGHT_NOTICE | 40 + .../devices/adms/mextram/adms3va/bjt504t.va | 40 + .../devices/adms/mextram/adms3va/evaluate.inc | 704 +++++ .../devices/adms/mextram/adms3va/frontdef.inc | 84 + .../adms/mextram/adms3va/initialize.inc | 74 + .../devices/adms/mextram/adms3va/opinfo.inc | 231 ++ .../devices/adms/mextram/adms3va/opvars.inc | 152 ++ .../adms/mextram/adms3va/parameters.inc | 209 ++ .../devices/adms/mextram/adms3va/tscaling.inc | 242 ++ .../adms/mextram/adms3va/variables.inc | 197 ++ .../adms3va/JUNCAP200_InitModel.include | 184 ++ .../adms3va/JUNCAP200_macrodefs.include | 285 ++ .../psp102/adms3va/JUNCAP200_parlist.include | 65 + .../psp102/adms3va/JUNCAP200_varlist.include | 67 + .../psp102/adms3va/PSP102_ChargesNQS.include | 303 +++ .../psp102/adms3va/PSP102_InitNQS.include | 190 ++ .../psp102/adms3va/PSP102_binning.include | 127 + .../psp102/adms3va/PSP102_binpars.include | 233 ++ .../psp102/adms3va/PSP102_macrodefs.include | 250 ++ .../adms/psp102/adms3va/PSP102_module.include | 2358 +++++++++++++++++ .../adms3va/PSP102_nqs_macrodefs.include | 117 + .../psp102/adms3va/SIMKIT_macrodefs.include | 121 + .../devices/adms/psp102/adms3va/psp102.va | 48 + .../adms/psp102/adms3va/readme.ngspice | 8 + .../devices/adms/psp102/adms3va/readme.txt | 120 + 29 files changed, 9638 insertions(+) create mode 100644 src/spicelib/devices/adms/ekv/adms3va/ekv.va create mode 100644 src/spicelib/devices/adms/hicum0/adms3va/hicum0.va create mode 100644 src/spicelib/devices/adms/hicum2/adms3va/hicum2.va create mode 100644 src/spicelib/devices/adms/mextram/adms3va/COPYRIGHT_NOTICE create mode 100644 src/spicelib/devices/adms/mextram/adms3va/bjt504t.va create mode 100644 src/spicelib/devices/adms/mextram/adms3va/evaluate.inc create mode 100644 src/spicelib/devices/adms/mextram/adms3va/frontdef.inc create mode 100644 src/spicelib/devices/adms/mextram/adms3va/initialize.inc create mode 100644 src/spicelib/devices/adms/mextram/adms3va/opinfo.inc create mode 100644 src/spicelib/devices/adms/mextram/adms3va/opvars.inc create mode 100644 src/spicelib/devices/adms/mextram/adms3va/parameters.inc create mode 100644 src/spicelib/devices/adms/mextram/adms3va/tscaling.inc create mode 100644 src/spicelib/devices/adms/mextram/adms3va/variables.inc create mode 100644 src/spicelib/devices/adms/psp102/adms3va/JUNCAP200_InitModel.include create mode 100644 src/spicelib/devices/adms/psp102/adms3va/JUNCAP200_macrodefs.include create mode 100644 src/spicelib/devices/adms/psp102/adms3va/JUNCAP200_parlist.include create mode 100644 src/spicelib/devices/adms/psp102/adms3va/JUNCAP200_varlist.include create mode 100644 src/spicelib/devices/adms/psp102/adms3va/PSP102_ChargesNQS.include create mode 100644 src/spicelib/devices/adms/psp102/adms3va/PSP102_InitNQS.include create mode 100644 src/spicelib/devices/adms/psp102/adms3va/PSP102_binning.include create mode 100644 src/spicelib/devices/adms/psp102/adms3va/PSP102_binpars.include create mode 100644 src/spicelib/devices/adms/psp102/adms3va/PSP102_macrodefs.include create mode 100644 src/spicelib/devices/adms/psp102/adms3va/PSP102_module.include create mode 100644 src/spicelib/devices/adms/psp102/adms3va/PSP102_nqs_macrodefs.include create mode 100644 src/spicelib/devices/adms/psp102/adms3va/SIMKIT_macrodefs.include create mode 100644 src/spicelib/devices/adms/psp102/adms3va/psp102.va create mode 100644 src/spicelib/devices/adms/psp102/adms3va/readme.ngspice create mode 100644 src/spicelib/devices/adms/psp102/adms3va/readme.txt diff --git a/ChangeLog b/ChangeLog index 954717ffd..cf1f3b573 100644 --- a/ChangeLog +++ b/ChangeLog @@ -1,3 +1,7 @@ +2011-12-13 Robert Larice + * src/spicelib/devices/adms/*/adms3va/* : + copy old amds .va files to a new directory `adms3va' + 2011-12-12 Robert Larice * src/spicelib/devices/adms/admst/ngspiceMODULE*.xml : remove CVS `Id' and `log' keyword incantations @@ -8,6 +12,17 @@ Please use `cvs log' if you really want to know the CVS log +2011-12-12 Laurent Lemaitre + * src/spicelib/devices/adms/hicum0/admsva/hicum0.va , + * src/spicelib/devices/adms/mextram/admsva/bjt504t.va , + * src/spicelib/devices/adms/psp102/admsva/JUNCAP200_parlist.include , + * src/spicelib/devices/adms/psp102/admsva/PSP102_module.include : + Make veriloga models compliant with Language Reference Manual. They will not compile with --adms flag. + +2011-12-12 Laurent Lemaitre + * src/spicelib/devices/adms/admst/ngspice.xml : + Set name of model C routines unique - make linker happy. + 2011-12-11 Robert Larice * src/spicelib/devices/adms/admst/ngspice.xml : #4/4 #include --> #include "ngspice/..." for adms3 @@ -57,6 +72,10 @@ * src/spicelib/analysis/dcpss.c : similiarity dctran.c versus dcpss.c +2011-12-10 Laurent Lemaitre + * src/spicelib/devices/adms/admst/ngspice.xml : + add dynamic loading feature + 2011-12-03 Robert Larice * src/spicelib/analysis/dcpss.c , * src/spicelib/analysis/dctran.c : diff --git a/src/spicelib/devices/adms/ekv/adms3va/ekv.va b/src/spicelib/devices/adms/ekv/adms3va/ekv.va new file mode 100644 index 000000000..71ae4accb --- /dev/null +++ b/src/spicelib/devices/adms/ekv/adms3va/ekv.va @@ -0,0 +1,661 @@ +// EPFL-EKV version 2.6: A Verilog-A description. +// The intrinsic device is coded according to the official manual +// (revision II) available at http://legwww.epfl.ch/ekv. +// contribution of Ivan Riis Nielsen 11/2006, modified by Dietmar Warning 01/2009 + +//Default simulator: Spectre + +`ifdef insideADMS + `define P(txt) (*txt*) + `define PGIVEN(p) $given(p) + `define INITIAL_MODEL @(initial_model) + `define INSTANCE @(initial_instance) + `define NOISE @(noise) +`else + `define P(txt) (txt) + `define PGIVEN(p) p + `define INITIAL_MODEL + `define INSTANCE + `define NOISE +`endif + +//ADS +//`include "constants.vams" +//`include "disciplines.vams" +//`include "compact.vams" + +//Spectre +`include "constants.h" +`include "discipline.h" + +`define NMOS 1 +`define PMOS -1 + +`define EPSSI `P_EPS0*11.7 +`define EPSOX `P_EPS0*3.9 +`define TREF 300.15 + +`define SQR(x) ((x)*(x)) + +`define VT(temp) (`P_K*temp/`P_Q) +`define EG(temp) (1.16-0.000702*`SQR(temp)/(temp+1108)) +`define NI(temp) (1.45e16*(temp/`TREF)*exp(`EG(`TREF)/(2*`VT(`TREF))-`EG(temp)/(2*`VT(temp)))) + + +`define oneThird 3.3333333333333333e-01 + +// Constants needed in safe exponential function (called "expl") +`define se05 2.3025850929940458e+02 +`define ke05 1.0e-100 +`define ke05inv 1.0e100 + +// P3 3rd order polynomial expansion of exp() +`define P3(u) (1.0 + (u) * (1.0 + 0.5 * ((u) * (1.0 + (u) * `oneThird)))) + +// expl exp() with 3rd order polynomial extrapolation +// to avoid overflows and underflows and retain C-3 continuity +`define expl(x, res) \ +if (abs(x) < `se05) begin\ + res = exp(x); \ +end else begin \ + if ((x) < -`se05) begin\ + res = `ke05 / `P3(-`se05 - (x)); \ + end else begin\ + res = `ke05inv * `P3((x) - `se05); \ + end \ +end + + +module ekv (d,g,s,b); + + // Node definitions + + inout d,g,s,b; + electrical d,g,s,b,di,si; + + // Model parameters + + parameter integer nmos=1 from [0:1] `P(info="MOS type : nmos:0"); + parameter integer pmos=1 from [0:1] `P(info="MOS type : pmos:0"); + parameter integer MTYPE=(nmos==0 ? (pmos==0 ? 0 : 1) : (pmos==0 ? -1 : 1)); + parameter real TNOM=27 from (-273.15:inf) + `P(info="Nominal temperature [degC]"); + parameter real IMAX=1 from (0:inf) + `P(info="Maximum forward junction current before linearization [A]"); + + // - intrinsic model (optional, section 4.2.1) + parameter real TOX=0 from [0:inf) + `P(info="Oxide thickness [m]"); + parameter real NSUB=0 from [0:inf) + `P(info="Channel doping [cm^-3]"); + parameter real VFB=1001.0 from (-inf:inf) // use 1001V as "not specified" + `P(info="Flat-band voltage [V]"); + parameter real UO=0 from [0:inf) + `P(info="Low-field mobility [cm^2/Vs]"); + parameter real VMAX=0 from [0:inf) + `P(info="Saturation velocity [m/s]"); + parameter real THETA=0 from [0:inf) + `P(info="Mobility reduction coefficient [V^-1]"); + + // - intrinsic model (process related, section 4.1) + parameter real COX=((TOX>0) ? (`EPSOX/TOX) : 0.7m) from [0:inf) + `P(info="Oxide capacitance [F/m^2]"); + parameter real XJ=0.1u from [1n:inf) + `P(info="Junction depth [m]"); + parameter real DL=0 from (-inf:inf) + `P(info="Length correction [m]"); + parameter real DW=0 from (-inf:inf) + `P(info="Width correction [m]"); + + // - intrinsic model (basic, section 4.2) + parameter real GAMMA=((NSUB>0) ? (sqrt(2*`P_Q*`EPSSI*NSUB*1e6)/COX) : 1) from [0:inf) + `P(info="Body effect parameter [V^0.5]"); + parameter real PHI=((NSUB>0) ? (2*`VT((TNOM+273.15))*ln(max(NSUB,1)*1e6/`NI((TNOM+273.15)))) : 0.7) from [0.1:inf) + `P(info="Bulk Fermi potential (*2) [V]"); + parameter real VTO=((VFB<1000.0) ? (VFB+MTYPE*(PHI+GAMMA*sqrt(PHI))) : 0.5) from (-inf:inf) + `P(info="Long-channel threshold voltage [V]"); + parameter real KP=((UO>0) ? (UO*1e-4*COX) : 50u) from (0:inf) + `P(info="Transconductance parameter [A/V^2]"); + parameter real UCRIT=(((VMAX>0) && (UO>0)) ? (VMAX/(UO*1e-4)) : 2e6 ) from [100k:inf) + `P(info="Longitudinal critical field [V/m]"); + parameter real E0=((THETA>0) ? 0 : 1e12) from [100k:inf) + `P(info="Mobility reduction coefficient [V/m]"); + + // - intrinsic model (channel length modulation and charge sharing, section 4.3) + parameter real LAMBDA=0.5 from [0:inf) + `P(info="Depletion length coefficient (CLM)"); + parameter real WETA=0.25 from (-inf:inf) + `P(info="Narrow-channel effect coefficient"); + parameter real LETA=0.1 from (-inf:inf) + `P(info="Short-channel effect coefficient"); + + // - intrinsic model (reverse short channel effect, section 4.4) + parameter real Q0=0 from (-inf:inf) + `P(info="RSCE peak charge density [C/m^2]"); + parameter real LK=0.29u from [10n:inf) + `P(info="RSCE characteristic length [m]"); + + // - intrinsic model (impact ionization, section 4.5) + parameter real IBA=0 from (-inf:inf) + `P(info="First impact ionization coefficient [m^-1]"); + parameter real IBB=3e8 from [1e8:inf) + `P(info="Second impact ionization coefficient [V/m]"); + parameter real IBN=1 from [0.1:inf) + `P(info="Saturation voltage factor for impact ionization"); + + // - intrinsic model (temperature, section 4.6) + parameter real TCV=1m from (-inf:inf) + `P(info="Threshold voltage TC [V/K]"); + parameter real BEX=-1.5 from (-inf:inf) + `P(info="Mobility temperature exponent"); + parameter real UCEX=0.8 from (-inf:inf) + `P(info="Longitudinal critical field temperature exponent"); + parameter real IBBT=9e-4 from (-inf:inf) + `P(info="Temperature coefficient for IBB [K^-1]"); + + // - intrinsic model (matching, section 4.7) + parameter real AVTO=0 from (-inf:inf) + `P(info="Area related VTO mismatch parameter [Vm]"); + parameter real AKP=0 from (-inf:inf) + `P(info="Area related KP mismatch parameter [m]"); + parameter real AGAMMA=0 from (-inf:inf) + `P(info="Area related GAMMA mismatch parameter [V^0.5*m]"); + + // - intrinsic model (flicker noise, section 4.8) + parameter real KF=0 from [0:inf) + `P(info="Flicker noise coefficient"); + parameter real AF=1 from (-inf:inf) + `P(info="Flicker noise exponent"); + + // - intrinsic model (setup, section 4.9) + parameter real NQS=0 from [0:1] + `P(info="Non-quasi-static operation switch"); + parameter real SATLIM=exp(4) from (0:inf) + `P(info="Saturation limit (if/ir)"); + parameter real XQC=0.4 from [0:1] + `P(info="Charge/capacitance model selector"); + + // - external parasitic parameters + parameter real HDIF=0 from [0:inf) + `P(info="S/D diffusion length (/2) [m]"); + parameter real RSH=0 from [0:inf) + `P(info="S/D sheet resistance [ohm]"); + parameter real JS=0 from [0:inf) + `P(info="S/D junction saturation current density [A/m^2]"); + parameter real JSW=0 from [0:inf) + `P(info="S/D junction sidewall saturation current density [A/m]"); + parameter real XTI=0 from [0:inf) + `P(info="S/D diode saturation current temperature exponent"); + parameter real N=1 from [0.5:10] + `P(info="S/D diode emission coefficient"); + parameter real CJ=0 from [0:inf) + `P(info="S/D zero-bias junction capacitance per area [F/m^2]"); + parameter real CJSW=0 from [0:inf) + `P(info="S/D zero-bias junction capacitance per perimeter [F/m]"); + parameter real PB=0.8 from (0:inf) + `P(info="S/D bottom junction builtin potential [V]"); + parameter real PBSW=PB from (0:inf) + `P(info="S/D sidewall junction builtin potential [V]"); + parameter real MJ=0.5 from (0:inf) + `P(info="S/D bottom junction grading coefficient"); + parameter real MJSW=0.333 from (0:inf) + `P(info="S/D sidewall junction grading coefficient"); + parameter real FC=0.5 from (0:inf) + `P(info="S/D bottom junction forward-bias threshold"); + parameter real FCSW=FC from (0:inf) + `P(info="S/D sidewall junction forward-bias threshold"); + parameter real CGSO=0 from [0:inf) + `P(info="Gate-source overlap capacitance per width [F/m]"); + parameter real CGDO=0 from [0:inf) + `P(info="Gate-drain overlap capacitance per width [F/m]"); + parameter real CGBO=0 from [0:inf) + `P(info="Gate-bulk overlap capacitance per length [F/m]"); + + + // Instance parameters + + // - intrinsic model + parameter real L=10u from [0:inf] + `P(type="instance" info="Drawn length [m]" unit="m"); + parameter real W=10u from [0:inf] + `P(type="instance" info="Drawn width [m]" unit="m"); + parameter real M=1 from [0:inf] + `P(type="instance" info="Parallel multiplier" unit="m"); +// parameter real N=1 from [0:inf] +// `P(type="instance" info="Series multiplier" unit="m"); + + // - external parasitics + parameter real AD=((HDIF>0) ? (2*HDIF*W) : 0) from [0:inf) + `P(info="Drain area [m^2]" type="instance"); + parameter real AS=((HDIF>0) ? (2*HDIF*W) : 0) from [0:inf) + `P(info="Source area [m^2]" type="instance"); + parameter real PD=((HDIF>0) ? (4*HDIF+2*W) : 0) from [0:inf) + `P(info="Drain perimeter [m]" type="instance"); + parameter real PS=((HDIF>0) ? (4*HDIF+2*W) : 0) from [0:inf) + `P(info="Source perimeter [m]" type="instance"); + parameter real NRD=((HDIF>0) ? (HDIF/W) : 0) from [0:inf) + `P(info="Drain no. squares" type="instance"); + parameter real NRS=((HDIF>0) ? (HDIF/W) : 0) from [0:inf) + `P(info="Source no. squares" type="instance"); + parameter real RS=((RSH>0) ? (RSH*NRS) : 0) from [0:inf) + `P(info="Source resistance [ohms]" type="instance"); + parameter real RD=((RSH>0) ? (RSH*NRD) : 0) from [0:inf) + `P(info="Drain resistance [ohms]" type="instance"); + + + // Declaration of variables + integer mode; + real lc,isat_s,vexp_s,gexp_s,isat_d,vexp_d,gexp_d,fact, + weff,leff,np,ns,lmin,rd,rs,ceps,ca,xsi,dvrsce, + tempk,vt,sqrt_A,vto_a,kp_a,gamma_a,ucrit,phi,ibb,vc,qb0, + vg,vd,vs,tmp,vgprime,vp0,vsprime,vdprime,gamma0,gammaprime,vp,n,ifwd, + vdss,vdssprime,dv,vds,vip,dl,lprime,leq,irprime,irev,beta0,nau, + nq,xf,xr,qd,qs,qi,qb,qg,beta0prime,beta,vpprime,is,ids,vib, + idb,ibdj,ibsj,coxt,qdt,qst,qgt,qbt, + cbs0,cbs0sw,cbs,cbd0,cbd0sw,cbd, + fv,z0,z1,y; + + real cgso,cgdo,cgbo; + + + analog begin + + `INITIAL_MODEL begin // Model Initialization + + lc = sqrt(`EPSSI/COX*XJ); + + end // INITIAL_MODEL + + `INSTANCE begin // temperature independent device initialization + + weff = W+DW; + leff = L+DL; + + np = M; + ns = 1; + + // eq. 54 + lmin = 0.1*ns*leff; + + rs = ns/np*RS; + rd = ns/np*RD; + + ceps = 4*22e-3*22e-3; + ca = 0.028; + xsi = ca*(10*leff/LK-1); + dvrsce = 2*Q0/COX/`SQR(1+0.5*(xsi+sqrt(xsi*xsi+ceps))); + + coxt = np*ns*COX*weff*leff; + + end // temperature independent + + `INSTANCE begin // temperature dependent device initialization + tempk = $temperature; + vt = `VT(tempk); + + sqrt_A = sqrt(np*weff*ns*leff); + + vto_a = MTYPE*(VTO+TCV*(tempk-(TNOM+273.15)))+AVTO/sqrt_A; + kp_a = KP*pow(tempk/(TNOM+273.15),BEX)*(1+AKP/sqrt_A); + gamma_a = GAMMA+AGAMMA/sqrt_A; + ucrit = UCRIT*pow(tempk/(TNOM+273.15),UCEX); + phi = PHI*tempk/(TNOM+273.15)-3*vt*ln(tempk/(TNOM+273.15))-`EG(TNOM+273.15)*tempk/(TNOM+273.15)+`EG(tempk); + ibb = IBB*(1+IBBT*(tempk-(TNOM+273.15))); + + vc = ucrit*ns*leff; + + // eq. 60 + qb0 = gamma_a*sqrt(phi); + + fact = (`EG(TNOM+273.15)/`VT(TNOM+273.15)-`EG(tempk)/vt) * pow(tempk/(TNOM+273.15),XTI); + `expl(fact,tmp) + isat_s = np*ns*(JS*AS+JSW*PS)*tmp; + isat_d = np*ns*(JS*AD+JSW*PD)*tmp; + + if (isat_s>0) begin + vexp_s = vt*ln(IMAX/isat_s+1); + gexp_s = (IMAX+isat_s)/vt; + end else begin + vexp_s = -1e9; + gexp_s = 0; + end + + if (isat_d>0) begin + vexp_d = vt*ln(IMAX/isat_d+1); + gexp_d = (IMAX+isat_d)/vt; + end else begin + vexp_d = -1e9; + gexp_d = 0; + end + + cbs0 = np*ns*CJ*AS; + cbd0 = np*ns*CJ*AD; + cbs0sw = np*ns*CJSW*PS; + cbd0sw = np*ns*CJSW*PD; + + cgso = np*ns*CGSO*weff; + cgdo = np*ns*CGDO*weff; + cgbo = np*ns*CGBO*leff; + + end // temperature dependent + + + begin //Bias-dependent model evaluation + + vg = MTYPE*V(g,b); + vd = MTYPE*V(di,b); + vs = MTYPE*V(si,b); + // $strobe("vg=%e vd=%e vs=%e",vg,vd,vs); + + if (vd>=vs) + mode = 1; + else begin + mode = -1; + tmp = vs; + vs = vd; + vd = tmp; + end + + // eq. 33 + vgprime = vg-vto_a-dvrsce+phi+gamma_a*sqrt(phi); + // eq. 35 + vsprime = 0.5*(vs+phi+sqrt(`SQR(vs+phi)+16*`SQR(vt))); + vdprime = 0.5*(vd+phi+sqrt(`SQR(vd+phi)+16*`SQR(vt))); + // $strobe("vgprime=%e vdprime=%e vsprime=%e",vgprime,vdprime,vsprime); + // eq. 34 + if (vgprime>=0) begin + vp0 = vgprime-phi-gamma_a*(sqrt(vgprime+0.25*`SQR(gamma_a))-0.5*gamma_a); + // eq. 36 + gamma0 = gamma_a-`EPSSI/COX*(LETA/leff*(sqrt(vsprime)+sqrt(vdprime))-3*WETA/weff*sqrt(vp0+phi)); + end else begin + vp0 = -phi; + // eq. 36 - skipped sqrt(vp0+phi) here, it produces inf on derivative + gamma0 = gamma_a-`EPSSI/COX*(LETA/leff*(sqrt(vsprime)+sqrt(vdprime)) ); + end + // eq. 37 + gammaprime = 0.5*(gamma0+sqrt(`SQR(gamma0)+0.1*vt)); + // eq. 38 + if (vgprime>=0) + vp = vgprime-phi-gammaprime*(sqrt(vgprime+0.25*`SQR(gammaprime))-0.5*gammaprime); + else + vp = -phi; + // $strobe("vp0=%e vp=%e gamma0=%e gammaprime=%e",vp0,vp,gamma0,gammaprime); + // eq. 39 + n = 1+gamma_a*0.5/sqrt(vp+phi+4*vt); + + // Forward current (43-44) + fv=(vp-vs)/vt; + + if (fv > -0.35) begin + z0 = 2.0/(1.3 + fv - ln(fv+1.6)); + z1 = (2.0 + z0) / (1.0 + fv + ln(z0)); + y = (1.0 + fv + ln(z1)) / (2.0 + z1); + end + else if (fv > -15) begin + `expl(-fv,tmp) + z0 = 1.55 + tmp; + z1 = (2.0 + z0) / (1.0 + fv + ln(z0)); + y = (1.0 + fv + ln(z1)) / (2.0 + z1); + end + else if (fv > -23.0) begin + `expl(-fv,tmp) + y = 1.0 / (2.0 + tmp); + end + else begin + `expl(fv,tmp) + y = tmp + 1.0e-64; + end + + ifwd = y*(1.0 + y); + z0 = 1; + z1 = 1; + + // eq. 46 + vdss = vc*(sqrt(0.25+vt/vc*sqrt(ifwd))-0.5); + // eq. 47 + vdssprime = vc*(sqrt(0.25+vt/vc*(sqrt(ifwd)-0.75*ln(ifwd)))-0.5)+vt*(ln(0.5*vc/vt)-0.6); + // $strobe("ifwd=%e vdss=%e vdssprime=%e",ifwd,vdss,vdssprime); + // eq. 48 + dv = 4*vt*sqrt(LAMBDA*(sqrt(ifwd)-vdss/vt)+1.0/64); + // eq. 49 + vds = 0.5*(vd-vs); + // eq. 50 + vip = sqrt(`SQR(vdss)+`SQR(dv))-sqrt(`SQR(vds-vdss)+`SQR(dv)); + // eq. 52 + dl = LAMBDA*lc*ln(1+(vds-vip)/(lc*ucrit)); + + // eq. 53 + lprime = ns*leff-dl+(vds+vip)/ucrit; + // eq. 55 + leq = 0.5*(lprime+sqrt(`SQR(lprime)+`SQR(lmin))); + + // eq. 56 + fv=(vp-vds-vs-sqrt(`SQR(vdssprime)+`SQR(dv))+sqrt(`SQR(vds-vdssprime)+`SQR(dv)))/vt; + + if (fv > -0.35) begin + z0 = 2.0/(1.3 + fv - ln(fv+1.6)); + z1 = (2.0 + z0) / (1.0 + fv + ln(z0)); + y = (1.0 + fv + ln(z1)) / (2.0 + z1); + end + else if (fv > -15) begin + `expl(-fv,tmp) + z0 = 1.55 + tmp; + z1 = (2.0 + z0) / (1.0 + fv + ln(z0)); + y = (1.0 + fv + ln(z1)) / (2.0 + z1); + end + else if (fv > -23.0) begin + `expl(-fv,tmp) + y = 1.0 / (2.0 + tmp); + end + else begin + `expl(fv,tmp) + y = tmp + 1.0e-64; + end + + irprime = y*(1.0 + y); + z0 = 1; + z1 = 1; + + // eq. 57 + fv=(vp-vd)/vt; + + if (fv > -0.35) begin + z0 = 2.0/(1.3 + fv - ln(fv+1.6)); + z1 = (2.0 + z0) / (1.0 + fv + ln(z0)); + y = (1.0 + fv + ln(z1)) / (2.0 + z1); + end + else if (fv > -15) begin + `expl(-fv,tmp) + z0 = 1.55 + tmp; + z1 = (2.0 + z0) / (1.0 + fv + ln(z0)); + y = (1.0 + fv + ln(z1)) / (2.0 + z1); + end + else if (fv > -23.0) begin + `expl(-fv,tmp) + y = 1.0 / (2.0 + tmp); + end + else begin + `expl(fv,tmp) + y = tmp + 1.0e-64; + end + + irev = y*(1.0 + y); + + // eq. 58 + beta0 = kp_a*np*weff/leq; + // eq. 59 + nau = (5+MTYPE)/12.0; + + // eq. 69 + nq = 1+0.5*gamma_a/sqrt(vp+phi+1e-6); + + // eq. 70 + xf = sqrt(0.25+ifwd); + // eq. 71 + xr = sqrt(0.25+irev); + // eq. 72 + qd = -nq*(4.0/15*(3*`SQR(xr)*(xr+2*xf)+2*`SQR(xf)*(xf+2*xr))/`SQR(xf+xr)-0.5); + // eq. 73 + qs = -nq*(4.0/15*(3*`SQR(xf)*(xf+2*xr)+2*`SQR(xr)*(xr+2*xf))/`SQR(xf+xr)-0.5); + // eq. 74 + qi = qs+qd; + // eq. 75 + if (vgprime>=0) + qb = (-gamma_a*sqrt(vp+phi+1e-6))/vt-(nq-1)/nq*qi; + else + qb = -vgprime/vt; + // eq. 76 (qox removed since it is assumed to be zero) + qg = -qi-qb; + + if (E0!=0) begin + // eq. 61 + beta0prime = beta0*(1+COX/(E0*`EPSSI)*qb0); + // eq. 62 + beta = beta0prime/(1+COX/(E0*`EPSSI)*vt*abs(qb+nau*qi)); + end else begin + // eq. 63 + vpprime = 0.5*(vp+sqrt(`SQR(vp)+2*`SQR(vt))); + // eq. 64 + beta = beta0/(1+THETA*vpprime); + end // else: !if(e0!=0) + // eq. 65 + is = 2*n*beta*`SQR(vt); + // $strobe("beta0=%e beta0prime=%e beta=%e E0=%e qb0=%e qb=%e qi=%e",beta0,beta0prime,beta,E0,qb0,qb,qi); + // eq. 66 + ids = is*(ifwd-irprime); + // eq. 67 + vib = vd-vs-IBN*2*vdss; + // eq. 68 + if (vib>0) begin + `expl((-ibb*lc)/vib,tmp) + idb = ids*IBA/ibb*vib*tmp; + end else + idb = 0; + // $strobe("ids=%e idb=%e",ids,idb); + + if (mode>1) begin + if (isat_s>0) begin + if (-vs>vexp_s) + ibsj = IMAX+gexp_s*(-vs-vexp_s); + else begin + `expl(-vs/(N*vt),tmp) + ibsj = isat_s*(tmp-1); + end + end else + ibsj = 0; + + if (isat_d>0) begin + if (-vd>vexp_d) + ibdj = IMAX+gexp_d*(-vd-vexp_d); + else begin + `expl(-vd/(N*vt),tmp) + ibdj = isat_d*(tmp-1); + end + end else + ibdj = 0; + + end else begin // if (mode>1) + if (isat_s>0) begin + if (-vd>vexp_s) + ibsj = IMAX+gexp_s*(-vd-vexp_s); + else begin + `expl(-vd/(N*vt),tmp) + ibsj = isat_s*(tmp-1); + end + end else + ibsj = 0; + + if (isat_d>0) begin + if (-vs>vexp_d) + ibdj = IMAX+gexp_d*(-vs-vexp_d); + else begin + `expl(-vs/(N*vt),tmp) + ibdj = isat_d*(tmp-1); + end + end else + ibdj = 0; + + end // else: !if(mode>1) + + qdt = coxt*vt*qd; + qst = coxt*vt*qs; + qgt = coxt*vt*qg; + qbt = coxt*vt*qb; + + cbs = 0; + cbd = 0; + + if (cbs0>0) begin + if (MTYPE*V(b,si)>FC*PB) + cbs = cbs+cbs0/pow(1-FC,MJ)*(1+MJ*(MTYPE*V(b,si)-PB*FC))/(PB*(1-FC)); + else + cbs = cbs+cbs0/pow(1-MTYPE*V(b,si),MJ); + end + if (cbd0>0) begin + if (MTYPE*V(b,di)>FC*PB) + cbd = cbd+cbd0/pow(1-FC,MJ)*(1+MJ*(MTYPE*V(b,di)-PB*FC))/(PB*(1-FC)); + else + cbd = cbd+cbd0/pow(1-MTYPE*V(b,di),MJ); + end + if (cbs0sw>0) begin + if (MTYPE*V(b,si)>FCSW*PBSW) + cbs = cbs+cbs0sw/pow(1-FCSW,MJSW)*(1+MJSW*(MTYPE*V(b,si)-PBSW*FCSW))/(PBSW*(1-FCSW)); + else + cbs = cbs+cbs0sw/pow(1-MTYPE*V(b,si),MJSW); + end + if (cbd0sw>0) begin + if (MTYPE*V(b,di)>FCSW*PBSW) + cbd = cbd+cbd0sw/pow(1-FCSW,MJSW)*(1+MJSW*(MTYPE*V(b,di)-PBSW*FCSW))/(PBSW*(1-FCSW)); + else + cbd = cbd+cbd0sw/pow(1-MTYPE*V(b,di),MJSW); + end + + end //Bias-dependent model evaluation + + begin //Define branch sources + + I(di,si) <+ MTYPE*mode*ids; + if (mode>0) begin + I(di,b) <+ MTYPE*idb; + + I(di,g) <+ MTYPE*ddt(qdt); + I(si,g) <+ MTYPE*ddt(qst); + + end else begin + I(si,b) <+ MTYPE*idb; + + I(si,g) <+ MTYPE*ddt(qdt); + I(di,g) <+ MTYPE*ddt(qst); + + end // else: !if(mode>0) + + I(b,si) <+ MTYPE*ibsj; + I(b,di) <+ MTYPE*ibdj; + + I(b,g) <+ MTYPE*ddt(qbt); + + I(g,si) <+ cgso*ddt(V(g,si)); + I(g,di) <+ cgdo*ddt(V(g,di)); + I(g,b) <+ cgbo*ddt(V(g,b)); + + if (RD>0) + I(d,di) <+ V(d,di)/rd; + else + V(d,di) <+ 0.0; + if (RS>0) + I(s,si) <+ V(s,si)/rs; + else + V(s,si) <+ 0.0; + + I(b,si) <+ cbs*ddt(V(b,si)); + I(b,di) <+ cbd*ddt(V(b,di)); + + end // begin + +// `NOISE begin //Define noise sources +// +// end // noise + + end //analog + +endmodule diff --git a/src/spicelib/devices/adms/hicum0/adms3va/hicum0.va b/src/spicelib/devices/adms/hicum0/adms3va/hicum0.va new file mode 100644 index 000000000..90511a1a8 --- /dev/null +++ b/src/spicelib/devices/adms/hicum0/adms3va/hicum0.va @@ -0,0 +1,851 @@ +// HICUM Level_0 Version_1.12: A Verilog-A description +// (A simplified version of HICUM Level2 model for BJT) +// ## It is modified after the first version of HICUM/L0 code ## + +// 12/08: Modifications for ngspice and adms2.2.7 DW +// Changed VT0 in Vt0 to prevent conflict in compiled C version. +// Made a temporary variable cjei_i for cjei output purpose only. + +// Minor code related changes +// 03/08: Quick Fix: Default value of TFH has been changed from infinity to zero and modified the default value limits to [0, inf) to include zero +// 12/06: Upper limit of FGEO is changed to infinity +// 06/06: Thermal node "tnode" set as external +// Flag FLSH introduced for controlling Self-heating calculation +// all if-else blocks marked with begin-end +// all series resistors and RTH are allowed to have a minimum value MIN_R +// 07/06: QCJMOD deleted, QJMODF introduced along with with HICJQ +// ddx() operator used with QJMOD and QJMODF wherever needed +// aj is kept at 2.4 except BE depletion charge +// Substrate transistor transfer current added. +// Gmin added to (bi,ei) and (bi,ci) branches. +// hyperbolic smoothing used in rbi computation to avoid devide-by-zero. + +// ********************************************************************************* +// 06/06: Comment on NODE COLLAPSING: +// Presently this verilog code permits a minimum of 1 milli-Ohm resistance for any +// series resistance as well as for thermal resistance RTH. If any of the resistance +// values drops below this minimum value, the corresponding nodes are shorted with +// zero voltage contribution. We want the model compilers/simulators deal this +// situation in such a manner that the corresponding node is COLLAPSED. +// We expect that the simulators should permit current contribution statement +// for any branch with resistance value more than (or equal to) 1 milli-Ohm without +// any convergence problem. In fact, we wish NOT to have to use a voltage contribution +// statement in our Verilog code, except as an indication for the model compiler/simulator +// to interprete a zero branch voltage as NODE-COLLAPSING action. +// ********************************************************************************** + + +//Default simulator: Spectre + +`ifdef insideADMS + `define P(p) (*p*) +`else + `define P(p) +`endif + + +//ADS +//`include "constants.vams" +//`include "disciplines.vams" +//`include "compact.vams" + +//Spectre +`include "constants.h" +`include "discipline.h" + + +`define NPN +1 +`define PNP -1 + +`define VPT_thresh 1.0e2 +`define EXPLIM 80.0 +`define INF 1.0e6 +`define TMAX 326.85 +`define TMIN -100.0 +`define MIN_R 0.001 +//`define Gmin 1.0e-12 + +`define QCMODF(vj,cj0,vd,z,aj,cjf)\ + if(cj0 > 0.0) begin\ + vf = vd*(1.0-exp(-ln(aj)/z));\ + xvf = (vf-vj)/VT;\ + xvf2 = sqrt(xvf*xvf+1.921812);\ + v_j = vf-VT*(xvf+xvf2)*0.5;\ + dvj = 0.5*(xvf+xvf2)/xvf2;\ + cjf = cj0*exp(-z*ln(1-v_j/vd))*dvj+aj*cj0*(1-dvj);\ + end else begin\ + cjf = 0.0;\ + end + +// DEPLETION CHARGE CALCULATION +// Hyperbolic smoothing used; no punch-through +`define QJMODF(vj,cj0,vd,z,aj,qjf)\ + if(cj0 > 0.0) begin\ + vf = vd*(1.0-exp(-ln(aj)/z));\ + xvf = (vf-vj)/VT;\ + xvf2 = sqrt(xvf*xvf+1.921812);\ + v_j = vf-VT*(xvf+xvf2)*0.5;\ + x = 1.0-z;\ + y = 1.0-exp(x*ln(1.0-v_j/vd));\ + qjf = cj0*vd*y/x+aj*cj0*(vj-v_j);\ + end else begin\ + qjf = 0.0;\ + end + + +// Depletion Charge : with punch through +`define QJMOD(vj,cj0,vd,z,vpt,aj,qjf)\ + if(cj0 > 0.0) begin\ + zr = z/4.0;\ + vp = vpt-vd;\ + vf = vd*(1.0-exp(-ln(aj)/z));\ + cmax = aj*cj0;\ + cr = cj0*exp((z-zr)*ln(vd/vpt));\ + a = VT;\ + ve = (vf-vj)/a;\ + if (ve <= `EXPLIM) begin\ + ex1 = exp(ve);\ + ee1 = 1.0+ex1;\ + vj1 = vf-a*ln(ee1);\ + end else begin\ + vj1 = vj;\ + end\ + a = 0.1*vp+4.0*VT;\ + vr = (vp+vj1)/a;\ + if (vr <= `EXPLIM) begin\ + ex1 = exp(vr);\ + ee1 = 1.0+ex1;\ + vj2 = -vp+a*ln(ee1);\ + end else begin\ + vj2 = vj1;\ + end\ + vj4 = vj-vj1;\ + ez = 1.0-z;\ + ezr = 1.0-zr;\ + vdj1 = ln(1.0-vj1/vd);\ + vdj2 = ln(1.0-vj2/vd);\ + qj1 = cj0*(1.0-exp(vdj2*ez))/ez;\ + qj2 = cr*(1.0-exp(vdj1*ezr))/ezr;\ + qj3 = cr*(1.0-exp(vdj2*ezr))/ezr;\ + qjf = (qj1+qj2-qj3)*vd+cmax*vj4;\ + end else begin\ + qjf = 0.0;\ + end + + +// DEPLETION CHARGE CALCULATION SELECTOR: +// Dependent on junction punch-through voltage +// Important for collector related junctions +`define HICJQ(vj,cj0,vd,z,vpt,qjf)\ + if(vpt < `VPT_thresh) begin\ + `QJMOD(vj,cj0,vd,z,vpt,2.4,qjf)\ + end else begin\ + `QJMODF(vj,cj0,vd,z,2.4,qjf)\ + end + +//Temperature dependence of depletion capacitance parameters +`define TMPHICJ(cj0,vd,z,vg,cj0_t,vd_t)\ + arg = 0.5*vd/Vt0;\ + vdj0 = 2*Vt0*ln(exp(arg)-exp(-arg));\ + vdjt = vdj0*qtt0+vg*(1-qtt0)-mg*VT*ln_qtt0;\ + vd_t = vdjt+2*VT*ln(0.5*(1+sqrt(1+4*exp(-vdjt/VT))));\ + cj0_t = cj0*exp(z*ln(vd/vd_t)); + + +//Limiting exponential +`define LIN_EXP(le, arg)\ + if(arg > 80) begin\ + le = (1 + ((arg) - 80));\ + arg = 80;\ + end else begin\ + le=1;\ + end\ + le = le*limexp(arg); + +// IDEAL DIODE (WITHOUT CAPACITANCE): +// conductance not calculated +// INPUT: +// IS, IST : saturation currents (model parameter related) +// UM1 : ideality factor +// U : branch voltage +// IMPLICIT INPUT: +// VT : thermal voltage +// OUTPUT: +// Iz : diode current +`define HICDIO(IS,IST,UM1,U,Iz)\ + DIOY = U/(UM1*VT);\ + if (IS > 0.0) begin\ + if (DIOY > 80) begin\ + le = (1 + ((DIOY) - 80));\ + DIOY = 80;\ + end else begin\ + le = 1;\ + end\ + le = le*limexp(DIOY);\ + Iz = IST*(le-1.0);\ + if(DIOY <= -14.0) begin\ + Iz = -IST;\ + end\ + end else begin\ + Iz = 0.0;\ + end + + +module hic0_full (c,b,e,s,tnode); + + +//Node definitions + + inout c,b,e,s,tnode; + (*info="external collector node"*)electrical c; + (*info="external base node"*)electrical b; + (*info="external emitter node"*)electrical e; + (*info="external substrate node"*)electrical s; + (*info="internal collector node"*)electrical ci; + (*info="internal base node"*)electrical bi; + (*info="internal emitter node"*)electrical ei; + (*info="local temperature rise node"*)electrical tnode; + + + //Branch definitions + branch (ci,c) br_cic_i; + branch (ci,c) br_cic_v; + branch (ei,e) br_eie_i; + branch (ei,e) br_eie_v; + branch (bi,ei) br_biei; + branch (bi,ci) br_bici; + branch (ci,ei) br_ciei; + branch (b,bi) br_bbi_i; + branch (b,bi) br_bbi_v; + branch (b,e) br_be; + branch (b,ci) br_bci; + branch (b,s) br_bs; + branch (s,ci) br_sci; + branch (tnode ) br_sht; + +// +// Parameter initialization with default values + +// Collector current + (*spice_name="is", info="(Modified) saturation current", m_factor="yes", unit="A"*) parameter real is = 1.0e-16 from [0:1]; + (*spice_name="mcf", info="Non-ideality coefficient of forward collector current"*) parameter real mcf = 1.00 from (0:10]; + (*spice_name="mcr", info="Non-ideality coefficient of reverse collector current"*) parameter real mcr = 1.00 from (0:10]; + (*spice_name="vef", info="forward Early voltage (normalization volt.)", unit="V", default_value="infinity"*) parameter real vef = `INF from (0:`INF]; + (*spice_name="iqf", info="forward d.c. high-injection toll-off current", unit="A", m_factor="yes", default_value="infinity"*) parameter real iqf = `INF from (0:`INF]; + (*spice_name="iqr", info="inverse d.c. high-injection roll-off current", unit="A", m_factor="yes", default_value="infinity"*) parameter real iqr = `INF from (0:`INF]; + (*spice_name="iqfh", info="high-injection correction current", unit="A", m_factor="yes"*) parameter real iqfh = `INF from (0:`INF]; + (*spice_name="tfh", info="high-injection correction factor", test_value="2e-9", m_factor="yes"*) parameter real tfh = 0.0 from [0:`INF); + +// Base current + (*spice_name="ibes", info="BE saturation current", unit="A", m_factor="yes"*) parameter real ibes = 1e-18 from [0:1]; + (*spice_name="mbe", info="BE non-ideality factor"*) parameter real mbe = 1.0 from (0:10]; + (*spice_name="ires", info="BE recombination saturation current", test_value="1e-16", unit="A", m_factor="yes"*) parameter real ires = 0.0 from [0:1]; + (*spice_name="mre", info="BE recombination non-ideality factor"*) parameter real mre = 2.0 from (0:10]; + (*spice_name="ibcs", info="BC saturation current", test_value="1e-16", unit="A", m_factor="yes"*) parameter real ibcs = 0.0 from [0:1]; + (*spice_name="mbc", info="BC non-ideality factor"*) parameter real mbc = 1.0 from (0:10]; + +// BE depletion cap + (*spice_name="cje0", info="Zero-bias BE depletion capacitance", unit="F", test_value="2e-14", m_factor="yes"*) parameter real cje0 = 1.0e-20 from (0:`INF); + (*spice_name="vde", info="BE built-in voltage", unit="V"*) parameter real vde = 0.9 from (0:10]; + (*spice_name="ze", info="BE exponent factor"*) parameter real ze = 0.5 from (0:1]; + (*spice_name="aje", info="Ratio of maximum to zero-bias value"*) parameter real aje = 2.5 from [1:`INF); + +// Transit time + (*spice_name="t0", info="low current transit time at Vbici=0", test_value="5e-12", unit="s"*) parameter real t0 = 0.0 from [0:`INF); + (*spice_name="dt0h", info="Base width modulation contribution", test_value="2e-12", unit="s"*) parameter real dt0h = 0.0; // from [0:`INF) ; + (*spice_name="tbvl", info="SCR width modulation contribution", test_value="4e-12", unit="s"*) parameter real tbvl = 0.0 from [0:`INF); + (*spice_name="tef0", info="Storage time in neutral emitter", test_value="1e-12", unit="s"*) parameter real tef0 = 0.0 from [0:`INF); + (*spice_name="gte", info="Exponent factor for emmiter transit time"*) parameter real gte = 1.0 from (0:10]; + (*spice_name="thcs", info="Saturation time at high current densities", test_value="3e-11", unit="s"*) parameter real thcs = 0.0 from [0:`INF); + (*spice_name="ahc", info="Smoothing facor for current dependence"*) parameter real ahc = 0.1 from (0:10]; + (*spice_name="tr", info="Storage time at inverse operation", unit="s"*) parameter real tr = 0.0 from [0:`INF); + +// Critical current + (*spice_name="rci0", info="Low-field collector resistance under emitter", test_value="50", unit="Ohm", m_inverse_factor="yes"*) parameter real rci0 = 150 from (0:`INF); + (*spice_name="vlim", info="Voltage dividing ohmic and satur.region", unit="V"*) parameter real vlim = 0.5 from (0:10]; + (*spice_name="vpt", info="Punch-through voltage", test_value="10", unit="V", default="infinity"*) parameter real vpt = 100 from (0:100]; + (*spice_name="vces", info="Saturation voltage", unit="V"*) parameter real vces = 0.1 from [0:1]; + +// BC depletion cap intern + (*spice_name="cjci0", info="Total zero-bias BC depletion capacitance", test_value="1e-15", unit="F", m_factor="yes"*) parameter real cjci0 = 1.0e-20 from (0:`INF); + (*spice_name="vdci", info="BC built-in voltage", test_value="0.7", unit="V"*) parameter real vdci = 0.7 from (0:10]; + (*spice_name="zci", info="BC exponent factor", test_value="0.4"*) parameter real zci = 0.333 from (0:1]; + (*spice_name="vptci", info="Punch-through voltage of BC junction", test_value="50", unit="V"*) parameter real vptci = 100 from (0:100]; + +// BC depletion cap extern + (*spice_name="cjcx0", info="Zero-bias external BC depletion capacitance", unit="F", test_value="1e-15", m_factor="yes"*) parameter real cjcx0 = 1.0e-20 from [0:`INF); + (*spice_name="vdcx", info="External BC built-in voltage", unit="V"*) parameter real vdcx = 0.7 from (0:10]; + (*spice_name="zcx", info="External BC exponent factor"*) parameter real zcx = 0.333 from (0:1]; + (*spice_name="vptcx", info="Punch-through voltage", unit="V", test_value="5.0", default="infinity"*) parameter real vptcx = 100 from (0:100]; + (*spice_name="fbc", info="Split factor = Cjci0/Cjc0", test_value="0.5"*) parameter real fbc = 1.0 from [0:1]; + +// Base resistance + (*spice_name="rbi0", info="Internal base resistance at zero-bias", test_value="100", unit="Ohm", m_inverse_factor="yes"*) parameter real rbi0 = 0.0 from [0:`INF); + (*spice_name="vr0e", info="forward Early voltage (normalization volt.)", unit="V"*) parameter real vr0e = 2.5 from (0:`INF]; + (*spice_name="vr0c", info="forward Early voltage (normalization volt.)", unit="V", default="infinity", test_value="25.0"*) parameter real vr0c = `INF from (0:`INF]; + (*spice_name="fgeo", info="Geometry factor", test_value="0.73"*) parameter real fgeo = 0.656 from [0:`INF]; + +// Series resistances + (*spice_name="rbx", info="External base series resistance", test_value="8.8", unit="Ohm", m_inverse_factor="yes"*) parameter real rbx = 0.0 from [0:`INF); + (*spice_name="rcx", info="Emitter series resistance", test_value="12.5", unit="Ohm", m_inverse_factor="yes"*) parameter real rcx = 0.0 from [0:`INF); + (*spice_name="re", info="External collector series resistance", test_value="9.16", unit="Ohm", m_inverse_factor="yes"*) parameter real re = 0.0 from [0:`INF); + +// Substrate transfer current, diode current and cap + (*spice_name="itss", info="Substrate transistor transfer saturation current", unit="A", test_value="1e-17", m_factor="yes"*) parameter real itss = 0.0 from [0:1.0]; + (*spice_name="msf", info="Substrate transistor transfer current non-ideality factor"*) parameter real msf = 1.0 from (0:10]; + (*spice_name="iscs", info="SC saturation current", unit="A", test_value="1e-17", m_factor="yes"*) parameter real iscs = 0.0 from [0:1.0]; + (*spice_name="msc", info="SC non-ideality factor"*) parameter real msc = 1.0 from (0:10]; + (*spice_name="cjs0", info="Zero-bias SC depletion capacitance", unit="F", test_value="1e-15", m_factor="yes"*) parameter real cjs0 = 1.0e-20 from [0:`INF); + (*spice_name="vds", info="SC built-in voltage", unit="V"*) parameter real vds = 0.3 from (0:10]; + (*spice_name="zs", info="External SC exponent factor"*) parameter real zs = 0.3 from (0:1]; + (*spice_name="vpts", info="SC punch-through voltage", unit="V", test_value="5.0", default="infinity"*) parameter real vpts = 100 from (0:100]; + +// Parasitic caps + (*spice_name="cbcpar", info="Collector-base isolation (overlap) capacitance", unit="F", m_factor="yes", test_value="1e-15"*) parameter real cbcpar = 0.0 from [0:`INF); + (*spice_name="cbepar", info="Emitter-base oxide capacitance", unit="F", m_factor="yes", test_value="2e-15"*) parameter real cbepar = 0.0 from [0:`INF); + +// BC avalanche current + (*spice_name="eavl", info="Exponent factor", test_value="1e-14"*) parameter real eavl = 0.0 from [0:inf); + (*spice_name="kavl", info="Prefactor", test_value="1.19"*) parameter real kavl = 0.0 from [0:`INF); + +// Flicker noise + (*spice_name="kf", info="flicker noise coefficient", unit="M^(1-AF)"*) parameter real kf = 0.0 from [0:`INF); + (*spice_name="af", info="flicker noise exponent factor"*) parameter real af = 2.0 from (0:10]; + +// Temperature dependance + (*spice_name="vgb", info="Bandgap-voltage", unit="V", test_value="1.17"*) parameter real vgb = 1.2 from (0:10]; + (*spice_name="vge", info="Effective emitter bandgap-voltage", unit="V", test_value="1.07"*) parameter real vge = 1.17 from (0:10]; + (*spice_name="vgc", info="Effective collector bandgap-voltage", unit="V", test_value="1.14"*) parameter real vgc = 1.17 from (0:10]; + (*spice_name="vgs", info="Effective substrate bandgap-voltage", unit="V", test_value="1.17"*) parameter real vgs = 1.17 from (0:10]; + (*spice_name="f1vg", info="Coefficient K1 in T-dependent bandgap equation", unit="V/K"*) parameter real f1vg =-1.02377e-4; + (*spice_name="f2vg", info="Coefficient K2 in T-dependent bandgap equation", unit="V/K"*) parameter real f2vg = 4.3215e-4; + (*spice_name="alt0", info="Frist-order TC of tf0", unit="1/K"*) parameter real alt0 = 0.0; + (*spice_name="kt0", info="Second-order TC of tf0", unit="1/K^2"*) parameter real kt0 = 0.0; + (*spice_name="zetact", info="Exponent coefficient in transfer current temperature dependence", test_value="3.5"*) parameter real zetact = 3.0; + (*spice_name="zetabet", info="Exponent coefficient in BE junction current temperature dependence", test_value="4.0"*) parameter real zetabet = 3.5; + (*spice_name="zetaci", info="TC of epi-collector diffusivity", test_value="1.6"*) parameter real zetaci = 0.0; + (*spice_name="alvs", info="Relative TC of satur.drift velocity", unit="1/K", test_value="1e-3"*) parameter real alvs = 0.0; + (*spice_name="alces", info="Relative TC of vces", unit="1/K", test_value="4e-4"*) parameter real alces = 0.0; + (*spice_name="zetarbi", info="TC of internal base resistance", test_value="0.6"*) parameter real zetarbi = 0.0; + (*spice_name="zetarbx", info="TC of external base resistance", test_value="0.2"*) parameter real zetarbx = 0.0; + (*spice_name="zetarcx", info="TC of external collector resistance", test_value="0.2"*) parameter real zetarcx = 0.0; + (*spice_name="zetare", info="TC of emitter resistances"*) parameter real zetare = 0.0; + (*spice_name="alkav", info="TC of avalanche prefactor", unit="1/K"*) parameter real alkav = 0.0; + (*spice_name="aleav", info="TC of avalanche exponential factor", unit="1/K"*) parameter real aleav = 0.0; + +// Self-heating + (*spice_name="flsh", info="Flag for self-heating calculation", test_value="2"*) parameter integer flsh = 0 from [0:2]; + (*spice_name="rth", info="Thermal resistance", test_value="200.0", unit="K/W", m_inverse_factor="yes"*) parameter real rth = 0.0 from [0:`INF); + (*spice_name="cth", info="Thermal capacitance", test_value="0.1", unit="Ws/K", m_factor="yes"*) parameter real cth = 0.0 from [0:`INF); + +// Transistor type + (*spice_isflag="yes", info="model type flag for npn" *) parameter integer npn = 1 from [0:1]; + (*info="model type flag for pnp" *) parameter integer pnp = 0 from [0:1]; + +//Circuit simulator specific parameters + (*spice_name="tnom", info="Temperature for which parameters are valid", unit="C"*) parameter real tnom = 27; + (*spice_name="dt", type="instance", info="Temperature change for particular transistor", unit="K"*) parameter real dt = 0.0; + + +// Declaration of the variables: begin + + real _circuit_gmin; + + real HICUMtype ; + + // QCJMOD + real cj0,vd,z,aj; + real zr,vp; + real cmax,cr,ve; + real ee1,ez,ezr,vdj1,vdj2,ex1,vr,vj1,vj2,vj4; + real qj1,qj2,qj3,qjf; + + + //Cjfun *** VT, removed: BA + real cj1,cj2,cj3,cjf; + + + //cjtfun *** tnom,VT,mg,Vt0, removed: BA + real vg; + real vdj0,vdjt,cj0_t,vd_t,aj_t; + + + // temperature and drift + real VT,Tamb,Tdev,Tnom,dT,qtt0,ln_qtt0; + real vde_t,vdci_t,vdcx_t,vds_t; + real is_t,ires_t,ibes_t,ibcs_t; + real itss_t,iscs_t,cje0_t,cjci0_t,cjcx0_t; + real cjs0_t,rci0_t,vlim_t; + real vces_t,thcs_t,tef0_t,rbi0_t; + real rbx_t,rcx_t,re_t,t0_t,eavl_t,kavl_t; + real aje_t; + + // bc charge and cap + (*ask="yes", info="B-C internal junction charge", unit="C"*) real qjci ; + real qjcx,qjcii,cjcii,qjcxi,qjciii; //cjcx + real cjci0_t_ii,cjcx0_t_ii,cjcx0_t_i,v_j; + + // be junction + (*ask="yes", info="B-E internal junction charge", unit="C"*) real qjei ; + (*ask="yes", info="B-E internal junction capacitance", unit="F"*) real cjei_i ; // dw: adms2.2.7 problem + real cjei,vf,vj,x,y,e1,e2; + + // transfer and internal base current + real cc,qj_2,facl; + real tf0,ickf,ickr,itfi,itri,qm; + real qpt,itf,itr; + (*ask="yes", info="Transfer Current", unit="A"*) real it ; + real ibe,ire,ibi; + real itfl,itrl,al,s3l,wl,d_qfh; + + // be diffusion charge + real qf,qf0,dqfh,dqef; + real dtef,dtfh,tf,ick; + real vc,vceff,s3,w,a,tww; + + // bc diffusion charge + real qr; + + // avalanche current source + real v_bord,a_iavl,lncc; + + // base resistance + real rb,eta,rbi,qje,Qz_nom,fQz; + + // substrate transistor, diode and cap + real qjs,HSa,HSb,HSI_Tsu,HSUM; + + // self heating + real pterm; + + // new for temperature dependence + real mg,zetabci,zetasct,zetatef,avs; + real k1,k2,vgbe,vgbc,vgsc,dvg; + real xvf,xvf2,dvj,uvc,Vt0; + + // noise + real flicker_Pwr,fourkt,twoq; + + // LIN_EXP + real le,arg,le1,arg1,le2,arg2; + + //HICDIO + real IS,IST,UM1,U,Iz,DIOY; + + // branch voltages + real Vbci,Vbici,Vbiei,Vciei,Vsci,Veie,Vbbi,Vcic,Vbe,Vrth; + + //Output to be seen + (*ask="yes", info="Base-collector diode current", unit="A"*) real ijbc ; + (*ask="yes", info="Avalanche current", unit="A"*) real iavl ; + (*ask="yes", info="Substrate-collector diode current", unit="A"*) real ijsc ; + (*ask="yes", info="Current through external to internal emitter node", unit="A"*) real Ieei ; + (*ask="yes", info="Current through external to internal collector node", unit="A"*) real Icci ; + (*ask="yes", info="Current through external to internal base node", unit="A"*) real Ibbi ; + (*ask="yes", info="Base-collector diode current minus the avalanche current", unit="A"*) real Ibici ; + (*ask="yes", info="Base-emitter diode current", unit="A"*) real ijbe ; + + real Qbci,Qbe,Qbici,Qbiei; +//Declaration of the variables: end + + +// +//======================== calculation of the transistor =================== +// + +analog begin + +// assign voltages with regard to transistor type + + begin : initial_model + if ($param_given(npn)) + HICUMtype = `NPN; + else if ($param_given(pnp)) + HICUMtype = `PNP; + else + HICUMtype = `NPN; + end + + Vbci = HICUMtype*V(br_bci); + Vbici = HICUMtype*V(br_bici); + Vbiei = HICUMtype*V(br_biei); + Vciei = HICUMtype*V(br_ciei); + Vsci = HICUMtype*V(br_sci); + Veie = V(br_eie_v); + Vcic = V(br_cic_v); + Vbbi = V(br_bbi_v); + Vbe = HICUMtype*V(br_be); + Vrth = V(br_sht); + + + +// +// temperature and resulting parameter drift +// + + Tnom = tnom+273.15; + Tamb = $temperature; + Tdev = Tamb+dt+Vrth; + +// Limit temperature to avoid FPE's in equations + if(Tdev < `TMIN + 273.15) begin + Tdev = `TMIN + 273.15; + end else begin + if (Tdev > `TMAX + 273.15) begin + Tdev = `TMAX + 273.15; + end + end + + Vt0 = `P_K*Tnom /`P_Q; + VT = `P_K*Tdev /`P_Q; + dT = Tdev-Tnom; + qtt0 = Tdev/Tnom; + ln_qtt0 = ln(qtt0); + k1 = f1vg*Tnom; + k2 = f2vg*Tnom+k1*ln(Tnom); + avs = alvs*Tnom; + vgbe = (vgb+vge)/2; + vgbc = (vgb+vgc)/2; + vgsc = (vgs+vgc)/2; + mg = 3-`P_Q*f1vg/`P_K; + zetabci = mg+1-zetaci; + zetasct = mg-1.5; //+1-m_upS with m_upS=2.5 + is_t = is*exp(zetact*ln_qtt0+vgb/VT*(qtt0-1)); + ibes_t = ibes*exp(zetabet*ln_qtt0+vge/VT*(qtt0-1)); + ires_t = ires*exp(0.5*mg*ln_qtt0+0.5*vgbe/VT*(qtt0-1)); + ibcs_t = ibcs*exp(zetabci*ln_qtt0+vgc/VT*(qtt0-1)); + itss_t = itss*exp(zetasct*ln_qtt0+vgc/VT*(qtt0-1)); + iscs_t = iscs*exp(zetasct*ln_qtt0+vgs/VT*(qtt0-1)); + `TMPHICJ(cje0,vde,ze,vgbe,cje0_t,vde_t) + aje_t = aje*vde_t/vde; + `TMPHICJ(cjci0,vdci,zci,vgbc,cjci0_t,vdci_t) + `TMPHICJ(cjcx0,vdcx,zcx,vgbc,cjcx0_t,vdcx_t) + `TMPHICJ(cjs0,vds,zs,vgsc,cjs0_t,vds_t) + rci0_t = rci0*exp(zetaci*ln_qtt0); + vlim_t = vlim*exp((zetaci-avs)*ln_qtt0); + vces_t = vces*(1+alces*dT); + t0_t = t0*(1+alt0*dT+kt0*dT*dT); + thcs_t = thcs*exp((zetaci-1)*ln_qtt0); + zetatef = zetabet-zetact-0.5; + dvg = vgb-vge; + tef0_t = tef0*exp(zetatef*ln_qtt0-dvg/VT*(qtt0-1)); + rbx_t = rbx*exp(zetarbx*ln_qtt0); + rcx_t = rcx*exp(zetarcx*ln_qtt0); + rbi0_t = rbi0*exp(zetarbi*ln_qtt0); + re_t = re*exp(zetare*ln_qtt0); + eavl_t = eavl*exp(aleav*dT); + kavl_t = kavl*exp(alkav*dT); + + +// +// Calculation of intrinsic transistor elements +// + +// BC charge and cap (internal and external) + +// The cjcx0 value is used to switch between one (cjcx0=0) and two bc parameter sets +// 1. For one parameter set only the internal bc set is partitioned by fbc +// 2. For two independent sets only the external set is partitioned by fbc + + if (cjcx0_t==0) begin + cjci0_t_ii = cjci0_t*fbc; // zero bias internal portion + qjcxi = 0; + cjcx0_t_i = cjci0_t*(1-fbc); // zero bias external portion + `HICJQ(Vbci,cjcx0_t_i,vdci_t,zci,vptci,qjcx) + end else begin + cjci0_t_ii = cjci0_t; // zero bias internal portion + cjcx0_t_ii = cjcx0_t*fbc; + `HICJQ(Vbici,cjcx0_t_ii,vdcx_t,zcx,vptcx,qjcxi) + cjcx0_t_i = cjcx0_t*(1-fbc); // zero bias external portion + `HICJQ(Vbci,cjcx0_t_i,vdcx_t,zcx,vptcx,qjcx) + end + `HICJQ(Vbici,cjci0_t_ii,vdci_t,zci,vptci,qjci) + qjcii = qjci+qjcxi; + +//Internal bc cap without punch through for cc + + //`HICJQ(Vbici,cjci0_t_ii,vdci_t,zci,100,qjciii) + `QCMODF(Vbici,cjci0_t_ii,vdci_t,zci,2.4,cjcii) + //cjcii = ddx(qjciii,V(bi)); + +//Internal be cap and charge + + `QJMODF(Vbiei,cje0_t,vde_t,ze,aje_t,qjei) + cjei = ddx(qjei,V(bi)); + cjei_i = cjei; // dw: adms2.2.7 problem + +// Critical current: ick + vc = Vciei-vces_t; + uvc = vc/VT-1; + vceff = VT*(1+0.5*(uvc+sqrt(uvc*uvc+1.921812))); + x = (vceff-vlim_t)/vpt; + ick = vceff*(1+0.5*(x+sqrt(x*x+1e-3)))/rci0_t/sqrt(1+vceff*vceff/vlim_t/vlim_t); + +// Transfer current + +// Normalized BC cap and carge + cc = cjci0_t_ii/cjcii; + qjci = qjci/cjci0_t_ii; + qj_2 = (1+qjci/vef)/2; + +// Minority charge transit time + tf0 = t0_t+dt0h*(cc-1)+tbvl*(1/cc-1); + +// DC critical currents + ickf = iqf; + ickr = iqr; + +// Ideal transfer currents + arg1 = Vbiei/(mcf*VT); + `LIN_EXP(le1,arg1) + itfi=is_t*le1; + + arg2 = Vbici/(mcr*VT); + `LIN_EXP(le2,arg2) + itri=is_t*le2; + + +// Normalized minority charge + qm = (itfi/ickf+itri/ickr); + +// Normalized total hole charge + qpt = qj_2+sqrt((qj_2)*(qj_2)+qm); + if (qpt<=1e-20) begin + qpt=1e-20; + end + +// Low transfer current + itfl = itfi/qpt; + itrl = itri/qpt; + +// Normalized injection width with low transfer current +// and normalized charge component + if (itfl<=1e-20) begin + itfl = 1e-20; + end + al = 1-ick/itfl; + s3l = sqrt(al*al+ahc); + wl = (al+s3l)/(1+sqrt(1+ahc)); + d_qfh = (wl*wl+tfh*itfl/ick)*itfl/iqfh; + +// Transfer current + facl = 1/(1+d_qfh/qpt); + itf = itfl*facl; + itr = itrl*facl; + if (itf<=1e-20) begin + itf = 1e-20; + end + it = itf-itr; + +// BE diffusion charge + +// Calculation of low-current portion + qf0 = tf0*itf; + +// Current dependent component + a = 1-ick/itf; + s3 = sqrt(a*a+ahc); + w = (a+s3)/(1+sqrt(1+ahc)); + tww = thcs_t*w*w; + dqfh = tww*itf; + dtfh = tww*(1+2*ick/itf/s3); + +// Emitter component + dtef = tef0_t*exp(gte*ln(itf/ick)); + dqef = dtef*itf/(gte+1.0); + +// Total minority charge and transit time + qf = qf0+dqef+dqfh; + tf = tf0+dtfh+dtef; + +// BC diffusion charge + qr = tr*itr; + +// Internal base current + +// BE diode + `HICDIO(ibes,ibes_t,mbe,Vbiei,ibe) + `HICDIO(ires,ires_t,mre,Vbiei,ire) + ijbe = ibe+ire; + +// BC diode + `HICDIO(ibcs,ibcs_t,mbc,Vbici,ijbc) + +// Total base current + ibi = ijbe+ijbc; + +// Avalanche current + + if (Vbici < 0) begin : HICAVL + v_bord = eavl_t*vdci_t; + if (vdci_t-Vbici>v_bord) begin + a_iavl = kavl_t/vdci_t*exp(-cc); + iavl = itf*a_iavl*(v_bord+(1+cc)*(vdci_t-Vbici-v_bord)); + end else begin + lncc = ln(1/cc); + iavl = kavl_t*itf*exp(-1/zci*lncc-eavl_t*exp((1/zci-1)*lncc)); + end + end else begin + iavl = 0; + end + +// +// Additional elements for external transistor +// + +// Base resistance + if(rbi0_t > 0.0) begin : HICRBI + // Conductivity modulation with hyperbolic smoothing + qje = qjei/cje0_t; + Qz_nom = 1+qje/vr0e+qjci/vr0c+itf/ickf+itr/ickr; + fQz = 0.5*(Qz_nom+sqrt(Qz_nom*Qz_nom+0.01));; + rbi = rbi0_t/fQz; + // Emitter current crowding + if (ibi > 0.0) begin + eta = fgeo*rbi*ibi/VT; + if (eta < 1e-6) begin + rbi = rbi*(1-0.5*eta); + end else begin + rbi = rbi*ln(eta+1)/eta; + end + end + end else begin + rbi = 0.0; + end + // Total base resistance + rb = rbi+rbx_t; + +// Parasitic substrate transistor transfer current + if(itss > 0.0) begin : Sub_Transfer + HSUM = msf*VT; + HSa = limexp(Vbci/HSUM); + HSb = limexp(Vsci/HSUM); + HSI_Tsu = itss_t*(HSa-HSb); + end else begin + HSI_Tsu = 0.0; + end + +// Substrate diode and cap and charge + + `HICDIO(iscs,iscs_t,msc,Vsci,ijsc) + + `HICJQ(Vsci,cjs0_t,vds_t,zs,vpts,qjs) + +// Self heating + + if (flsh == 1 && rth >= `MIN_R) begin + pterm = it*Vciei+iavl*(vdci_t-Vbici); + end else if (flsh == 2 && rth >= `MIN_R) begin + pterm = Vciei*it + (vdci_t-Vbici)*iavl + ijbe*Vbiei + ijbc*Vbici + ijsc*Vsci; + if (rb >= `MIN_R) begin + pterm = pterm + Vbbi*Vbbi/rb; + end + if (re_t >= `MIN_R) begin + pterm = pterm + Veie*Veie/re_t; + end + if (rcx_t >= `MIN_R) begin + pterm = pterm + Vcic*Vcic/rcx_t; + end + end + +// +// Compute branch sources +// + + Ibici = ijbc - iavl; + + Qbci = cbcpar*Vbci; + Qbe = cbepar*Vbe; + Qbici = qjcii+qr; + Qbiei = qjei+qf; + + ijsc = HICUMtype*ijsc; + qjs = HICUMtype*qjs; + qjcx = HICUMtype*qjcx; + Qbci = HICUMtype*Qbci; + Qbe = HICUMtype*Qbe; + + Ibici = HICUMtype*Ibici; + Qbici = HICUMtype*Qbici; + ijbe = HICUMtype*ijbe; + Qbiei = HICUMtype*Qbiei; + it = HICUMtype*it; + +// +// Define branch sources +// + I(br_biei) <+ _circuit_gmin*V(br_biei); + I(br_bici) <+ _circuit_gmin*V(br_bici); + + I(br_bs) <+ HSI_Tsu; + I(br_sci) <+ ijsc + _circuit_gmin*V(br_sci); //`P(spectre_gmin="add", spectre_pwl_passive="1e10"); + I(br_sci) <+ ddt(qjs); + I(br_bci) <+ ddt(qjcx); + I(br_bci) <+ ddt(Qbci); + I(br_be) <+ ddt(Qbe); + if (re >= `MIN_R) begin + I(br_eie_i) <+ Veie/re_t + _circuit_gmin*V(br_eie_i);//`P(spectre_gmin="add"); + end else begin + V(br_eie_v) <+ 0.0; + end + if (rcx >= `MIN_R) begin + I(br_cic_i) <+ Vcic/rcx_t + _circuit_gmin*V(br_cic_i);//`P(spectre_gmin="add"); + end else begin + V(br_cic_v) <+ 0.0; + end + if (rbi0 >= `MIN_R || rbx >= `MIN_R) begin + I(br_bbi_i) <+ Vbbi/rb + _circuit_gmin*V(br_bbi_i); //`P(spectre_gmin="add"); + end else begin + V(br_bbi_v) <+ 0.0; + end + I(br_bici) <+ Ibici + _circuit_gmin*V(br_bici); //`P(spectre_gmin="add", spectre_pwl_sat_current="IMAX", spectre_pwl_sat_cond="imax/0.025", spectre_pwl_rev_current="imax", spectre_pwl_rev_cond="IMAX/0.025"); + I(br_bici) <+ ddt(Qbici); + I(br_biei) <+ ijbe + _circuit_gmin*V(br_biei); //`P(spectre_gmin="add", spectre_pwl_fwd_current="IBEIS*exp(25.0)", spectre_pwl_fwd_node="bi", spectre_pwl_fwd_cond="IBEIS*exp(25.0)/0.025", spectre_pwl_sat_current="IMAX", spectre_pwl_sat_cond="IMAX/0.025", spectre_pwl_passive="1e10"); + I(br_biei) <+ ddt(Qbiei); + I(br_ciei) <+ it; //`P(spectre_pwl_fwd_current="IS*exp(25.0)", spectre_pwl_fwd_node="bi", spectre_pwl_fwd_cond="IS*exp(25.0)/0.025", spectre_pwl_rev_current="IMAX", spectre_pwl_rev_cond="IMAX/0.025", spectre_pwl_passive="1e10") + + // Following code is an intermediate solution: + // ****************************************** + if(flsh == 0 || rth < `MIN_R) begin + I(br_sht) <+ Vrth/`MIN_R; + end else begin + I(br_sht) <+ Vrth/rth-pterm + _circuit_gmin*V(br_sht);//`P(spectre_gmin="add"); + I(br_sht) <+ ddt(cth*Vrth); + end + // ****************************************** + // For simulators having no problem with V(br_sht) <+ 0.0 + // with external thermal node, follwing code may be used. + // This external thermal node should remain accessible. + // ******************************************** + //if(flsh == 0 || rth < `MIN_R) begin + // V(br_sht) <+ 0.0; + //end else begin + // I(br_sht) <+ Vrth/rth-pterm `P(spectre_gmin="add"); + // I(br_sht) <+ ddt(cth*Vrth); + //end + // ******************************************** + +// Noise sources +// Thermal noise + fourkt = 4.0 * `P_K * Tdev; + if(rbx >= `MIN_R || rbi0 >= `MIN_R) begin + I(br_bbi_i) <+ white_noise(fourkt/rb); + end + if(rcx >= `MIN_R) begin + I(br_cic_i) <+ white_noise(fourkt/rcx_t); + end + if(re >= `MIN_R) begin + I(br_eie_i) <+ white_noise(fourkt/re_t); + end + +// Shot noise + twoq = 2.0 * `P_Q; + I(br_biei) <+ white_noise(twoq*ijbe); + I(br_ciei) <+ white_noise(twoq*it); + +// Flicker noise + flicker_Pwr = kf*pow(ijbe,af); + I(br_biei) <+ flicker_noise(flicker_Pwr,1.0); + +end // analog +endmodule diff --git a/src/spicelib/devices/adms/hicum2/adms3va/hicum2.va b/src/spicelib/devices/adms/hicum2/adms3va/hicum2.va new file mode 100644 index 000000000..6bb05cd2a --- /dev/null +++ b/src/spicelib/devices/adms/hicum2/adms3va/hicum2.va @@ -0,0 +1,1658 @@ +//HICUM Level_2 Version_2.24: A Verilog-A Description + +//dw 09/10: Modifications for ngspice and adms: +// backup to ddx for capacitance calculation +// all V(...) <+ 0.0; are replaced by I(...) < V(...)/`MIN_R; +// using GMIN from ngspice: _circuit_gmin +// switch of section for correlated noise (see below) +// removed obsolete variables S_avl, f_p +// don't like internal variable declaration + +//**************New Implementations***************** + +//****************************************************************************** +//This code contains a Verilog-A implementation of Vertical Non-Quasi-Static(NQS) +//Effects using adjunct gyrator networks. To turn on this effect please set FLNQS=1. +//Although Vertical NQS effects have been taken into account in HICUM from the very +//beginning (see original FTN code and built-in v2.1 HICUM model inside most of the +//existing circuit simulators) their implementation has been based on Weil's approach. +//However, using Verilog, it is presently not possible to implement Weil's approach, +//since there does not exist access to previous time-steps of the simulatior. +//The nearly available Verilog-A solution reproduces the results of previous +//HICUM versions (cf. documentation). +//****************************************************************************** + +//****************************************************************************** +// Implementation of noise correlation +// Please turn-off (by front slash “//”) the noise correlation code section for simulation with Spectre +//****************************************************************************** + +// ***************Bug fix and optimization************* +// 12/09: Elimination of 'ddx' operator for internal capacitance determination +// Capacitances will be calculated by Analytical Equations +// 10/09: Temperature coefficient (ZETAxyz) range modified to [-10:10] +// 09/09: VPT ranges modified from [0:inf] to (0:inf] +// 07/09: DT0H rabge modified from no range to (-inf:inf) +// 03/09: Simplified input NQS adjacent circuit (RC network) +// 04/08: New range has been defined for FDQR0. +// 11/07: Bugs have been fixed in macro HICFCI and HICQFC +// 10/06: in @(initial_model), external if-block for HICTUN_T removed +// 11/06: within HICQFC, minor changes made for LATB<=0.01; +// also HICFCI and HICFCT are changed accordingly +// to ensure correct derivatives +// Upper limit of FGEO parameter was changed to infinity. +// 12/06: expressions for Cdei and Cdci are corrected not to include +// Ccdei and Cbdci respectively (used in Crbi expression). + +// 01/06: FCdf1_dw assigned expression (missing in v2.21) +// FCa and FCa1 are found to have same expression: FCa is omitted in those cases +// FCa1 written instead of FCa in the expression for FCf_ci +// Thermal node "tnode" set as external +// zetasct = mg+1-2.5 changed to zetasct = mg-1.5; +// Code optimization: Temperature dependent parts are moduled in two separate blocks: +// within @(initial_model) when self-heating is OFF +// outside @(initial_model) when self-heating is ON +// 03/06 : Further fix +// vlim_t,ibcis_t,ibcxs_t,itss_t,iscs_t considered in compatibility block +// ddt() operators are separated in contribution expressions. +// FLCOMP parameter is given different values +// 05/06: +// all if-else blocks marked with begin-end +// unused variables deleted +// all series resistors and RTH are allowed to have a minimum value MIN_R +// only tunelling current source contribution within if-then-else +// 06/06: HICRBI deleted and instead the code changed (hyperbolic smoothing in +// conductivity modulation part) and put in relevant portion of the code. +// 07/06: ddx() operator used to find out capacitances from charges: +// QJMODF,QJMOD,HICJQ changed accordingly +// Lateral NQS effect modified with ddx() operator. +// HICFCT included for downward compatibility reason. +// Few macros are taken inside the code: HICICK, HICAVL, HICTUN (more optimized), +// internal base resistance (Qjci included under conductivity modulation, hyperbolic smoothing used) +// Gmin added at (bi,ei) and (bi,ci) branches. +// 08/06: Units added in the parameter descriptions. + +// ********************************************************************************* +// 06/06: Comment on NODE COLLAPSING: +// Presently this verilog code permits a minimum of 1 milli-Ohm resistance for any +// series resistance as well as for thermal resistance RTH. If any of the resistance +// values drops below this minimum value, the corresponding nodes are shorted with +// zero voltage contribution. We want the model compilers/simulators deal this +// situation in such a manner that the corresponding node is COLLAPSED. +// We expect that the simulators should permit current contribution statement +// for any branch with resistance value more than (or equal to) 1 milli-Ohm without +// any convergence problem. In fact, we wish NOT to have to use a voltage contribution +// statement in our Verilog code, except as an indication for the model compiler/simulator +// to interprete a zero branch voltage as NODE-COLLAPSING action. +// ********************************************************************************** + + +//Default simulator: Spectre + +`ifdef insideADMS + `define MODEL @(initial_model) + `define NOISE @(noise) + `define ATTR(txt) (*txt*) +`else + `define MODEL + `define NOISE + `define ATTR(txt) +`endif + + +`define VPT_thresh 1.0e2 +`define Dexp_lim 80.0 +`define Cexp_lim 80.0 +`define DFa_fj 1.921812 +`define RTOLC 1.0e-5 +`define l_itmax 100 +`define TMAX 326.85 +`define TMIN -100.0 +`define LN_EXP_LIMIT 11.0 +`define MIN_R 0.001 +//`define Gmin 1.0e-12 +//`define Gmin $simparam("gmin",1e-12) //suggested by L.L + +//ADS +//`include "constants.vams" +//`include "disciplines.vams" +//`include "compact.vams" + +//Spectre +`include "constants.h" +`include "discipline.h" + +//////////////Explicit Capacitance and Charge Expression/////////////// + +// DEPLETION CHARGE CALCULATION +// Hyperbolic smoothing used; no punch-through +// INPUT: +// c_0 : zero-bias capacitance +// u_d : built-in voltage +// z : exponent coefficient +// a_j : control parameter for C peak value at high forward bias +// U_cap : voltage across junction +// IMPLICIT INPUT: +// VT : thermal voltage +// OUTPUT: +// Qz : depletion Charge +// C : depletion capacitance +`define QJMODF(c_0,u_d,z,a_j,U_cap,C,Qz)\ + if(c_0 > 0.0) begin\ + DFV_f = u_d*(1.0-exp(-ln(a_j)/z));\ + DFv_e = (DFV_f-U_cap)/VT;\ + DFs_q = sqrt(DFv_e*DFv_e+`DFa_fj);\ + DFs_q2 = (DFv_e+DFs_q)*0.5;\ + DFv_j = DFV_f-VT*DFs_q2;\ + DFdvj_dv = DFs_q2/DFs_q;\ + DFb = ln(1.0-DFv_j/u_d);\ + DFC_j1 = c_0*exp(-z*DFb)*DFdvj_dv;\ + C = DFC_j1+a_j*c_0*(1.0-DFdvj_dv);\ + DFQ_j = c_0*u_d*(1.0-exp(DFb*(1.0-z)))/(1.0-z);\ + Qz = DFQ_j+a_j*c_0*(U_cap-DFv_j);\ + end else begin\ + C = 0.0;\ + Qz = 0.0;\ + end + +//////////////////////////////////////////////////////////////// + + +//////////////Explicit Capacitance and Charge Expression/////////////// + + +// DEPLETION CHARGE CALCULATION CONSIDERING PUNCH THROUGH +// smoothing of reverse bias region (punch-through) +// and limiting to a_j=Cj,max/Cj0 for forward bias. +// Important for base-collector and collector-substrate junction +// INPUT: +// c_0 : zero-bias capacitance +// u_d : built-in voltage +// z : exponent coefficient +// a_j : control parameter for C peak value at high forward bias +// v_pt : punch-through voltage (defined as qNw^2/2e) +// U_cap : voltage across junction +// IMPLICIT INPUT: +// VT : thermal voltage +// OUTPUT: +// Qz : depletion charge +// C : depletion capacitance +`define QJMOD(c_0,u_d,z,a_j,v_pt,U_cap,C,Qz)\ + if(c_0 > 0.0) begin\ + Dz_r = z/4.0;\ + Dv_p = v_pt-u_d;\ + DV_f = u_d*(1.0-exp(-ln(a_j)/z));\ + DC_max = a_j*c_0;\ + DC_c = c_0*exp((Dz_r-z)*ln(v_pt/u_d));\ + Dv_e = (DV_f-U_cap)/VT;\ + if(Dv_e < `Cexp_lim) begin\ + De = exp(Dv_e);\ + De_1 = De/(1.0+De);\ + Dv_j1 = DV_f-VT*ln(1.0+De);\ + end else begin\ + De_1 = 1.0;\ + Dv_j1 = U_cap;\ + end\ + Da = 0.1*Dv_p+4.0*VT;\ + Dv_r = (Dv_p+Dv_j1)/Da;\ + if(Dv_r < `Cexp_lim) begin\ + De = exp(Dv_r);\ + De_2 = De/(1.0+De);\ + Dv_j2 = -Dv_p+Da*ln(1.0+De);\ + end else begin\ + De_2 = 1.0;\ + Dv_j2 = Dv_j1;\ + end\ + Dv_j4 = U_cap-Dv_j1;\ + DCln1 = ln(1.0-Dv_j1/u_d);\ + DCln2 = ln(1.0-Dv_j2/u_d);\ + Dz1 = 1.0-z;\ + Dzr1 = 1.0-Dz_r;\ + DC_j1 = c_0*exp(DCln2*(-z))*De_1*De_2;\ + DC_j2 = DC_c*exp(DCln1*(-Dz_r))*(1.0-De_2);\ + DC_j3 = DC_max*(1.0-De_1);\ + C = DC_j1+DC_j2+DC_j3;\ + DQ_j1 = c_0*(1.0-exp(DCln2*Dz1))/Dz1;\ + DQ_j2 = DC_c*(1.0-exp(DCln1*Dzr1))/Dzr1;\ + DQ_j3 = DC_c*(1.0-exp(DCln2*Dzr1))/Dzr1;\ + Qz = (DQ_j1+DQ_j2-DQ_j3)*u_d+DC_max*Dv_j4;\ + end else begin\ + C = 0.0;\ + Qz = 0.0;\ + end + + +// DEPLETION CHARGE & CAPACITANCE CALCULATION SELECTOR +// Dependent on junction punch-through voltage +// Important for collector related junctions +`define HICJQ(c_0,u_d,z,v_pt,U_cap,C,Qz)\ + if(v_pt < `VPT_thresh) begin\ + `QJMOD(c_0,u_d,z,2.4,v_pt,U_cap,C,Qz)\ + end else begin\ + `QJMODF(c_0,u_d,z,2.4,U_cap,C,Qz)\ + end + + +// A CALCULATION NEEDED FOR COLLECTOR MINORITY CHARGE FORMULATION +// INPUT: +// zb,zl : zeta_b and zeta_l (model parameters, TED 10/96) +// w : normalized injection width +// OUTPUT: +// hicfcio : function of equation (2.1.17-10) +`define HICFCI(zb,zl,w,hicfcio,dhicfcio_dw)\ + z = zb*w;\ + lnzb = ln(1+zb*w);\ + if(z > 1.0e-6) begin\ + x = 1.0+z;\ + a = x*x;\ + a2 = 0.250*(a*(2.0*lnzb-1.0)+1.0);\ + a3 = (a*x*(3.0*lnzb-1.0)+1.0)/9.0;\ + r = zl/zb;\ + hicfcio = ((1.0-r)*a2+r*a3)/zb;\ + dhicfcio_dw = ((1.0-r)*x+r*a)*lnzb;\ + end else begin\ + a = z*z;\ + a2 = 3.0+z-0.25*a+0.10*z*a;\ + a3 = 2.0*z+0.75*a-0.20*a*z;\ + hicfcio = (zb*a2+zl*a3)*w*w/6.0;\ + dhicfcio_dw = (1+zl*w)*(1+z)*lnzb;\ + end + + +// NEEDED TO CALCULATE WEIGHTED ICCR COLLECTOR MINORITY CHARGE +// INPUT: +// z : zeta_b or zeta_l +// w : normalized injection width +// OUTPUT: +// hicfcto : output +// dhicfcto_dw : derivative of output wrt w +`define HICFCT(z,w,hicfcto,dhicfcto_dw)\ + a = z*w;\ + lnz = ln(1+z*w);\ + if (a > 1.0e-6) begin\ + hicfcto = (a - lnz)/z;\ + dhicfcto_dw = a / (1.0 + a);\ + end else begin\ + hicfcto = 0.5 * a * w;\ + dhicfcto_dw = a;\ + end + + +// COLLECTOR CURRENT SPREADING CALCULATION +// collector minority charge incl. 2D/3D current spreading (TED 10/96) +// INPUT: +// Ix : forward transport current component (itf) +// I_CK : critical current +// FFT_pcS : dependent on fthc and thcs (parameters) +// IMPLICIT INPUT: +// ahc, latl, latb : model parameters +// VT : thermal voltage +// OUTPUT: +// Q_fC, Q_CT: actual and ICCR (weighted) hole charge +// T_fC, T_cT: actual and ICCR (weighted) transit time +// Derivative dfCT_ditf not properly implemented yet +`define HICQFC(Ix,I_CK,FFT_pcS,Q_fC,Q_CT,T_fC,T_cT)\ + Q_fC = FFT_pcS*Ix;\ + FCa = 1.0-I_CK/Ix;\ + FCrt = sqrt(FCa*FCa+ahc);\ + FCa_ck = 1.0-(FCa+FCrt)/(1.0+sqrt(1.0+ahc));\ + FCdaick_ditf = (FCa_ck-1.0)*(1-FCa)/(FCrt*Ix);\ + if(latb > latl) begin\ + FCz = latb-latl;\ + FCxl = 1.0+latl;\ + FCxb = 1.0+latb;\ + if(latb > 0.01) begin\ + FCln = ln(FCxb/FCxl);\ + FCa1 = exp((FCa_ck-1.0)*FCln);\ + FCd_a = 1.0/(latl-FCa1*latb);\ + FCw = (FCa1-1.0)*FCd_a;\ + FCdw_daick = -FCz*FCa1*FCln*FCd_a*FCd_a;\ + FCa1 = ln((1.0+latb*FCw)/(1.0+latl*FCw));\ + FCda1_dw = latb/(1.0+latb*FCw) - latl/(1.0+latl*FCw);\ + end else begin\ + FCf1 = 1.0-FCa_ck;\ + FCd_a = 1.0/(1.0+FCa_ck*latb);\ + FCw = FCf1*FCd_a;\ + FCdw_daick = -1.0*FCd_a*FCd_a*FCxb*FCd_a;\ + FCa1 = FCz*FCw;\ + FCda1_dw = FCz;\ + end\ + FCf_CT = 2.0/FCz;\ + FCw2 = FCw*FCw;\ + FCf1 = latb*latl*FCw*FCw2/3.0+(latb+latl)*FCw2/2.0+FCw;\ + FCdf1_dw = latb*latl*FCw2 + (latb+latl)*FCw + 1.0;\ + `HICFCI(latb,latl,FCw,FCf2,FCdf2_dw)\ + `HICFCI(latl,latb,FCw,FCf3,FCdf3_dw)\ + FCf_ci = FCf_CT*(FCa1*FCf1-FCf2+FCf3);\ + FCdfc_dw = FCf_CT*(FCa1*FCdf1_dw+FCda1_dw*FCf1-FCdf2_dw+FCdf3_dw);\ + FCdw_ditf = FCdw_daick*FCdaick_ditf;\ + FCdfc_ditf = FCdfc_dw*FCdw_ditf;\ + if(flcomp == 0.0 || flcomp == 2.1) begin\ + `HICFCT(latb,FCw,FCf2,FCdf2_dw)\ + `HICFCT(latl,FCw,FCf3,FCdf3_dw)\ + FCf_CT = FCf_CT*(FCf2-FCf3);\ + FCdfCT_dw = FCf_CT*(FCdf2_dw-FCdf3_dw);\ + FCdfCT_ditf = FCdfCT_dw*FCdw_ditf;\ + end else begin\ + FCf_CT = FCf_ci;\ + FCdfCT_ditf = FCdfc_ditf;\ + end\ + end else begin\ + if(latb > 0.01) begin\ + FCd_a = 1.0/(1.0+FCa_ck*latb);\ + FCw = (1.0-FCa_ck)*FCd_a;\ + FCdw_daick = -(1.0+latb)*FCd_a*FCd_a;\ + end else begin\ + FCw = 1.0-FCa_ck-FCa_ck*latb;\ + FCdw_daick = -(1.0+latb);\ + end\ + FCw2 = FCw*FCw;\ + FCz = latb*FCw;\ + FCz_1 = 1.0+FCz;\ + FCd_f = 1.0/(FCz_1);\ + FCf_ci = FCw2*(1.0+FCz/3.0)*FCd_f;\ + FCdfc_dw = 2.0*FCw*(FCz_1+FCz*FCz/3.0)*FCd_f*FCd_f;\ + FCdw_ditf = FCdw_daick*FCdaick_ditf;\ + FCdfc_ditf = FCdfc_dw*FCdw_ditf;\ + if(flcomp == 0.0 || flcomp == 2.1) begin\ + if (FCz > 0.001) begin\ + FCf_CT = 2.0*(FCz_1*ln(FCz_1)-FCz)/(latb*latb*FCz_1);\ + FCdfCT_dw = 2.0*FCw*FCd_f*FCd_f;\ + end else begin\ + FCf_CT = FCw2*(1.0-FCz/3.0)*FCd_f;\ + FCdfCT_dw = 2.0*FCw*(1.0-FCz*FCz/3.0)*FCd_f*FCd_f;\ + end\ + FCdfCT_ditf = FCdfCT_dw*FCdw_ditf;\ + end else begin\ + FCf_CT = FCf_ci;\ + FCdfCT_ditf = FCdfc_ditf;\ + end\ + end\ + Q_CT = Q_fC*FCf_CT;\ + Q_fC = Q_fC*FCf_ci;\ + T_fC = FFT_pcS*(FCf_ci+Ix*FCdfc_ditf);\ + T_cT = FFT_pcS*(FCf_CT+Ix*FCdfCT_ditf); + +// TRANSIT-TIME AND STORED MINORITY CHARGE +// INPUT: +// itf : forward transport current +// I_CK : critical current +// T_f : transit time \ +// Q_f : minority charge / for low current +// IMPLICIT INPUT: +// tef0, gtfe, fthc, thcs, ahc, latl, latb : model parameters +// OUTPUT: +// T_f : transit time \ +// Q_f : minority charge / transient analysis +// T_fT : transit time \ +// Q_fT : minority charge / ICCR (transfer current) +// Q_bf : excess base charge +`define HICQFF(itf,I_CK,T_f,Q_f,T_fT,Q_fT,Q_bf)\ + if(itf < 1.0e-6*I_CK) begin\ + Q_fT = Q_f;\ + T_fT = T_f;\ + end else begin\ + FFa = I_CK/itf;\ + FFd_TfE = tef0_t*exp(-gtfe*ln(FFa));\ + FFd_QfE = FFd_TfE*itf/(gtfe+1.0);\ + FFT_fbS = (1.0-fthc)*thcs_t;\ + FFx = 1.0-FFa;\ + FFs = sqrt(FFx*FFx+ahc);\ + FFw = (FFx+FFs)/(1.0+sqrt(1.0+ahc));\ + FFw_2 = FFw*FFw;\ + FFd_QfB = FFT_fbS*itf*FFw_2;\ + Q_bf = FFd_QfB;\ + FFa_w = FFw_2*(1.0+2.0*FFa/FFs);\ + FFd_TfB = FFT_fbS*FFa_w;\ + FFT_pcS = fthc*thcs_t;\ + if(latb <= 0.0 && latl <= 0.0) begin\ + FFQ_fC = FFT_pcS*itf*FFw_2;\ + FFT_fC = FFT_pcS*FFa_w;\ + FFQ_cT = FFQ_fC;\ + FFT_cT = FFT_fC;\ + end else begin\ + `HICQFC(itf,I_CK,FFT_pcS,FFQ_fC,FFQ_cT,FFT_fC,FFT_cT)\ + end\ + Q_f = Q_f+FFd_QfB;\ + T_f = T_f+FFd_TfB;\ + Q_fT = Q_f+hfe*FFd_QfE+hfc*FFQ_cT;\ + T_fT = T_f+hfe*FFd_TfE+hfc*FFT_cT;\ + Q_f = Q_f+FFd_QfE+FFQ_fC;\ + T_f = T_f+FFd_TfE+FFT_fC;\ + end + + + + +// IDEAL DIODE (WITHOUT CAPACITANCE): +// conductance calculation not required +// INPUT: +// IS, IST : saturation currents (model parameter related) +// UM1 : ideality factor +// U : branch voltage +// IMPLICIT INPUT: +// VT : thermal voltage +// OUTPUT: +// Iz : diode current +`define HICDIO(IS,IST,UM1,U,Iz)\ + DIOY = U/(UM1*VT);\ + if (IS > 0.0) begin\ + if (DIOY > `Dexp_lim) begin\ + le = (1 + (DIOY - `Dexp_lim));\ + DIOY = `Dexp_lim;\ + end else begin\ + le = 1;\ + end\ + le = le*limexp(DIOY);\ + Iz = IST*(le-1.0);\ + if(DIOY <= -14.0) begin\ + Iz = -IST;\ + end\ + end else begin\ + Iz = 0.0;\ + end + + + +// TEMPERATURE UPDATE OF JUNCTION CAPACITANCE RELATED PARAMETERS +// INPUT: +// mostly model parameters +// x : zero bias junction capacitance +// y : junction built-in potencial +// z : grading co-efficient +// w : ratio of maximum to zero-bias value of capacitance or punch-through voltage +// is_al : condition factor to check what "w" stands for +// vgeff : band-gap voltage +// IMPLICIT INPUT: +// VT : thermal voltage +// vt0,qtt0,ln_qtt0,mg : other model variables +// OUTPUT: +// c_j_t : temperature update of "c_j" +// vd_t : temperature update of "vd0" +// w_t : temperature update of "w" +`define TMPHICJ(c_j,vd0,z,w,is_al,vgeff,c_j_t,vd_t,w_t)\ + if (c_j > 0.0) begin\ + vdj0 = 2*vt0*ln(exp(vd0*0.5/vt0)-exp(-0.5*vd0/vt0));\ + vdjt = vdj0*qtt0+vgeff*(1-qtt0)-mg*VT*ln_qtt0;\ + vdt = vdjt+2*VT*ln(0.5*(1+sqrt(1+4*exp(-vdjt/VT))));\ + vd_t = vdt;\ + c_j_t = c_j*exp(z*ln(vd0/vd_t));\ + if (is_al == 1) begin\ + w_t = w*vd_t/vd0;\ + end else begin\ + w_t = w;\ + end\ + end else begin\ + c_j_t = c_j;\ + vd_t = vd0;\ + w_t = w;\ + end + + + +module hic2_full (c,b,e,s,tnode); + +//Node definitions + +inout c,b,e,s,tnode; +electrical c,b,e,s,ci,ei,bp,bi,si; +electrical xf1,xf2; +electrical xf; //RC nw + +electrical tnode; +electrical n1,n2; + +//Branch definitions +branch (b,bp) br_bbp_i; +branch (b,bp) br_bbp_v; +branch (ci,c) br_cic_i; +branch (ci,c) br_cic_v; +branch (ei,e) br_eie_i; +branch (ei,e) br_eie_v; +branch (bp,bi) br_bpbi_i; +branch (bp,bi) br_bpbi_v; +branch (si,s) br_sis_i; +branch (si,s) br_sis_v; +branch (bi,ei) br_biei; +branch (bi,ci) br_bici; +branch (ci,bi) br_cibi; +branch (ci,ei) br_ciei; +branch (ei,ci) br_eici; +branch (bp,e) br_bpe; +branch (b,e) br_be; +branch (bp,ei) br_bpei; +branch (bp,ci) br_bpci; +branch (b,ci) br_bci; +branch (si,ci) br_sici; +branch (bp,si) br_bpsi; +branch (tnode ) br_sht; + +//Phase network for ITF +branch (xf1 ) br_bxf1; +branch (xf1 ) br_cxf1; +branch (xf2 ) br_bxf2; +branch (xf2 ) br_cxf2; + +//Phase network for QF + +branch (xf ) br_bxf; //for RC nw +branch (xf ) br_cxf; //for RC nw + +//Noise + +branch (n1 ) b_n1; +branch (n2 ) b_n2; + + + +// -- ########################################################### +// -- ########### Parameters initialization ################ +// -- ########################################################### + + +//Transfer current +parameter real c10 = 2.0E-30 from [0:1] `ATTR(info="GICCR constant" unit="A^2s"); +parameter real qp0 = 2.0E-14 from (0:1] `ATTR(info="Zero-bias hole charge" unit="Coul"); +parameter real ich = 0.0 from [0:inf) `ATTR(info="High-current correction for 2D and 3D effects" unit="A"); //`0' signifies infinity +parameter real hfe = 1.0 from [0:inf] `ATTR(info="Emitter minority charge weighting factor in HBTs"); +parameter real hfc = 1.0 from [0:inf] `ATTR(info="Collector minority charge weighting factor in HBTs"); +parameter real hjei = 1.0 from [0:100] `ATTR(info="B-E depletion charge weighting factor in HBTs"); +parameter real hjci = 1.0 from [0:100] `ATTR(info="B-C depletion charge weighting factor in HBTs"); + +//Base-Emitter diode currents +parameter real ibeis = 1.0E-18 from [0:1] `ATTR(info="Internal B-E saturation current" unit="A"); +parameter real mbei = 1.0 from (0:10] `ATTR(info="Internal B-E current ideality factor"); +parameter real ireis = 0.0 from [0:1] `ATTR(info="Internal B-E recombination saturation current" unit="A"); +parameter real mrei = 2.0 from (0:10] `ATTR(info="Internal B-E recombination current ideality factor"); +parameter real ibeps = 0.0 from [0:1] `ATTR(info="Peripheral B-E saturation current" unit="A"); +parameter real mbep = 1.0 from (0:10] `ATTR(info="Peripheral B-E current ideality factor"); +parameter real ireps = 0.0 from [0:1] `ATTR(info="Peripheral B-E recombination saturation current" unit="A"); +parameter real mrep = 2.0 from (0:10] `ATTR(info="Peripheral B-E recombination current ideality factor"); +parameter real mcf = 1.0 from (0:10] `ATTR(info="Non-ideality factor for III-V HBTs"); + +//Transit time for excess recombination current at b-c barrier +parameter real tbhrec = 0.0 from [0:inf) `ATTR(info="Base current recombination time constant at B-C barrier for high forward injection" unit="s"); + +//Base-Collector diode currents +parameter real ibcis = 1.0E-16 from [0:1.0] `ATTR(info="Internal B-C saturation current" unit="A"); +parameter real mbci = 1.0 from (0:10] `ATTR(info="Internal B-C current ideality factor"); +parameter real ibcxs = 0.0 from [0:1.0] `ATTR(info="External B-C saturation current" unit="A"); +parameter real mbcx = 1.0 from (0:10] `ATTR(info="External B-C current ideality factor"); + +//Base-Emitter tunneling current +parameter real ibets = 0.0 from [0:1] `ATTR(info="B-E tunneling saturation current" unit="A"); +parameter real abet = 40 from [0:inf) `ATTR(info="Exponent factor for tunneling current"); +parameter integer tunode= 1 from [0:1] `ATTR(info="Specifies the base node connection for the tunneling current"); // =1 signifies perimeter node + +//Base-Collector avalanche current +parameter real favl = 0.0 from [0:inf) `ATTR(info="Avalanche current factor" unit="1/V"); +parameter real qavl = 0.0 from [0:inf) `ATTR(info="Exponent factor for avalanche current" unit="Coul"); +parameter real alfav = 0.0 `ATTR(info="Relative TC for FAVL" unit="1/K"); +parameter real alqav = 0.0 `ATTR(info="Relative TC for QAVL" unit="1/K"); + +//Series resistances +parameter real rbi0 = 0.0 from [0:inf) `ATTR(info="Zero bias internal base resistance" unit="Ohm"); +parameter real rbx = 0.0 from [0:inf) `ATTR(info="External base series resistance" unit="Ohm"); +parameter real fgeo = 0.6557 from [0:inf] `ATTR(info="Factor for geometry dependence of emitter current crowding"); +parameter real fdqr0 = 0.0 from [-0.5:100] `ATTR(info="Correction factor for modulation by B-E and B-C space charge layer"); +parameter real fcrbi = 0.0 from [0:1] `ATTR(info="Ratio of HF shunt to total internal capacitance (lateral NQS effect)"); +parameter real fqi = 1.0 from [0:1] `ATTR(info="Ration of internal to total minority charge"); +parameter real re = 0.0 from [0:inf) `ATTR(info="Emitter series resistance" unit="Ohm"); +parameter real rcx = 0.0 from [0:inf) `ATTR(info="External collector series resistance" unit="Ohm"); + +//Substrate transistor +parameter real itss = 0.0 from [0:1.0] `ATTR(info="Substrate transistor transfer saturation current" unit="A"); +parameter real msf = 1.0 from (0:10] `ATTR(info="Forward ideality factor of substrate transfer current"); +parameter real iscs = 0.0 from [0:1.0] `ATTR(info="C-S diode saturation current" unit="A"); +parameter real msc = 1.0 from (0:10] `ATTR(info="Ideality factor of C-S diode current"); +parameter real tsf = 0.0 from [0:inf) `ATTR(info="Transit time for forward operation of substrate transistor" unit="s"); + +//Intra-device substrate coupling +parameter real rsu = 0.0 from [0:inf) `ATTR(info="Substrate series resistance" unit="Ohm"); +parameter real csu = 0.0 from [0:inf) `ATTR(info="Substrate shunt capacitance" unit="F"); + +//Depletion Capacitances +parameter real cjei0 = 1.0E-20 from [0:inf) `ATTR(info="Internal B-E zero-bias depletion capacitance" unit="F"); +parameter real vdei = 0.9 from (0:10] `ATTR(info="Internal B-E built-in potential" unit="V"); +parameter real zei = 0.5 from (0:1] `ATTR(info="Internal B-E grading coefficient"); +parameter real ajei = 2.5 from [1:inf) `ATTR(info="Ratio of maximum to zero-bias value of internal B-E capacitance"); +parameter real cjep0 = 1.0E-20 from [0:inf) `ATTR(info="Peripheral B-E zero-bias depletion capacitance" unit="F"); +parameter real vdep = 0.9 from (0:10] `ATTR(info="Peripheral B-E built-in potential" unit="V"); +parameter real zep = 0.5 from (0:1] `ATTR(info="Peripheral B-E grading coefficient"); +parameter real ajep = 2.5 from [1:inf) `ATTR(info="Ratio of maximum to zero-bias value of peripheral B-E capacitance"); +parameter real cjci0 = 1.0E-20 from [0:inf) `ATTR(info="Internal B-C zero-bias depletion capacitance" unit="F"); +parameter real vdci = 0.7 from (0:10] `ATTR(info="Internal B-C built-in potential" unit="V"); +parameter real zci = 0.4 from (0:1] `ATTR(info="Internal B-C grading coefficient"); +parameter real vptci = 100 from (0:100] `ATTR(info="Internal B-C punch-through voltage" unit="V"); +parameter real cjcx0 = 1.0E-20 from [0:inf) `ATTR(info="External B-C zero-bias depletion capacitance" unit="F"); +parameter real vdcx = 0.7 from (0:10] `ATTR(info="External B-C built-in potential" unit="V"); +parameter real zcx = 0.4 from (0:1] `ATTR(info="External B-C grading coefficient"); +parameter real vptcx = 100 from (0:100] `ATTR(info="External B-C punch-through voltage" unit="V"); +parameter real fbcpar = 0.0 from [0:1] `ATTR(info="Partitioning factor of parasitic B-C cap"); +parameter real fbepar = 1.0 from [0:1] `ATTR(info="Partitioning factor of parasitic B-E cap"); +parameter real cjs0 = 0.0 from [0:inf) `ATTR(info="C-S zero-bias depletion capacitance" unit="F"); +parameter real vds = 0.6 from (0:10] `ATTR(info="C-S built-in potential" unit="V"); +parameter real zs = 0.5 from (0:1] `ATTR(info="C-S grading coefficient"); +parameter real vpts = 100 from (0:100] `ATTR(info="C-S punch-through voltage" unit="V"); + +//Diffusion Capacitances +parameter real t0 = 0.0 from [0:inf) `ATTR(info="Low current forward transit time at VBC=0V" unit="s"); +parameter real dt0h = 0.0 from (-inf:inf) `ATTR(info="Time constant for base and B-C space charge layer width modulation" unit="s"); +parameter real tbvl = 0.0 from [0:inf) `ATTR(info="Time constant for modelling carrier jam at low VCE" unit="s"); +parameter real tef0 = 0.0 from [0:inf) `ATTR(info="Neutral emitter storage time" unit="s"); +parameter real gtfe = 1.0 from (0:10] `ATTR(info="Exponent factor for current dependence of neutral emitter storage time"); +parameter real thcs = 0.0 from [0:inf) `ATTR(info="Saturation time constant at high current densities" unit="s"); +parameter real ahc = 0.1 from (0:10] `ATTR(info="Smoothing factor for current dependence of base and collector transit time"); +parameter real fthc = 0.0 from [0:1] `ATTR(info="Partitioning factor for base and collector portion"); +parameter real rci0 = 150 from (0:inf) `ATTR(info="Internal collector resistance at low electric field" unit="Ohm"); +parameter real vlim = 0.5 from (0:10] `ATTR(info="Voltage separating ohmic and saturation velocity regime" unit="V"); +parameter real vces = 0.1 from [0:1] `ATTR(info="Internal C-E saturation voltage" unit="V"); +parameter real vpt = 100.0 from (0:inf] `ATTR(info="Collector punch-through voltage" unit="V"); // `0' signifies infinity +parameter real tr = 0.0 from [0:inf) `ATTR(info="Storage time for inverse operation" unit="s"); + +//Isolation Capacitances +parameter real cbepar = 0.0 from [0:inf) `ATTR(info="Total parasitic B-E capacitance" unit="F"); +parameter real cbcpar = 0.0 from [0:inf) `ATTR(info="Total parasitic B-C capacitance" unit="F"); + +//Non-quasi-static Effect +parameter real alqf = 0.0 from [0:1] `ATTR(info="Factor for additional delay time of minority charge"); +parameter real alit = 0.0 from [0:1] `ATTR(info="Factor for additional delay time of transfer current"); +parameter integer flnqs = 0 from [0:1] `ATTR(info="Flag for turning on and off of vertical NQS effect"); + +//Noise +parameter real kf = 0.0 from [0:inf) `ATTR(info="Flicker noise coefficient"); +parameter real af = 2.0 from (0:10] `ATTR(info="Flicker noise exponent factor"); +parameter integer cfbe = -1 from [-2:-1] `ATTR(info="Flag for determining where to tag the flicker noise source"); + + +//Lateral Geometry Scaling (at high current densities) +parameter real latb = 0.0 from [0:inf) `ATTR(info="Scaling factor for collector minority charge in direction of emitter width"); +parameter real latl = 0.0 from [0:inf) `ATTR(info="Scaling factor for collector minority charge in direction of emitter length"); + +//Temperature dependence +parameter real vgb = 1.17 from (0:10] `ATTR(info="Bandgap voltage extrapolated to 0 K" unit="V"); +parameter real alt0 = 0.0 `ATTR(info="First order relative TC of parameter T0" unit="1/K"); +parameter real kt0 = 0.0 `ATTR(info="Second order relative TC of parameter T0"); +parameter real zetaci = 0.0 from [-10:10] `ATTR(info="Temperature exponent for RCI0"); +parameter real alvs = 0.0 `ATTR(info="Relative TC of saturation drift velocity" unit="1/K"); +parameter real alces = 0.0 `ATTR(info="Relative TC of VCES" unit="1/K"); +parameter real zetarbi = 0.0 from [-10:10] `ATTR(info="Temperature exponent of internal base resistance"); +parameter real zetarbx = 0.0 from [-10:10] `ATTR(info="Temperature exponent of external base resistance"); +parameter real zetarcx = 0.0 from [-10:10] `ATTR(info="Temperature exponent of external collector resistance"); +parameter real zetare = 0.0 from [-10:10] `ATTR(info="Temperature exponent of emitter resistance"); +parameter real zetacx = 1.0 from [-10:10] `ATTR(info="Temperature exponent of mobility in substrate transistor transit time"); +parameter real vge = 1.17 from (0:10] `ATTR(info="Effective emitter bandgap voltage" unit="V"); +parameter real vgc = 1.17 from (0:10] `ATTR(info="Effective collector bandgap voltage" unit="V"); +parameter real vgs = 1.17 from (0:10] `ATTR(info="Effective substrate bandgap voltage" unit="V"); +parameter real f1vg =-1.02377e-4 `ATTR(info="Coefficient K1 in T-dependent band-gap equation"); +parameter real f2vg = 4.3215e-4 `ATTR(info="Coefficient K2 in T-dependent band-gap equation"); +parameter real zetact = 3.0 from [-10:10] `ATTR(info="Exponent coefficient in transfer current temperature dependence"); +parameter real zetabet = 3.5 from [-10:10] `ATTR(info="Exponent coefficient in B-E junction current temperature dependence"); +parameter real alb = 0.0 `ATTR(info="Relative TC of forward current gain for V2.1 model" unit="1/K"); + +//Self-Heating +parameter integer flsh = 0 from [0:2] `ATTR(info="Flag for turning on and off self-heating effect"); +parameter real rth = 0.0 from [0:inf) `ATTR(info="Thermal resistance" unit="K/W"); +parameter real cth = 0.0 from [0:inf) `ATTR(info="Thermal capacitance" unit="J/W"); + +//Compatibility with V2.1 +parameter real flcomp = 0.0 from [0:inf) `ATTR(info="Flag for compatibility with v2.1 model (0=v2.1)"); + +//Circuit simulator specific parameters +parameter real tnom = 27.0 `ATTR(info="Temperature at which parameters are specified" unit="C"); +parameter real dt = 0.0 `ATTR(info="Temperature change w.r.t. chip temperature for particular transistor" unit="K"); + + +// +//======================== Transistor model formulation =================== +// + + //Declaration of variables + + real _circuit_gmin; + + //Temperature and drift + real VT,Tdev,qtt0,ln_qtt0,r_VgVT,V_gT,dT,k; + real ireis_t,ibeis_t,ibcxs_t,ibcis_t,iscs_t,cjci0_t; + real cjs0_t,rci0_t,vlim_t,vces_t,thcs_t,tef0_t,rbi0_t; + real rbx_t,rcx_t,re_t,t0_t,vdei_t,vdci_t,vpts_t,itss_t,tsf_t; + real c10_t,cjei0_t,qp0_t,vdcx_t,vptcx_t,cjcx01_t,cjcx02_t; + real qjcx0_t_i,qjcx0_t_ii,cratio_t,c_dummy; + real ibeps_t,ireps_t,cjep0_t; + real ajei_t,qavl_t,favl_t,ibets_t,abet_t,vptci_t,vdep_t,ajep_t,zetatef; + real k1,k2,dvg0,vge_t,vgb_t,vgbe_t,vds_t,vt0,Tnom,Tamb,a,avs; + real zetabci,zetabcxt,zetasct,vgbe0,mg,vgb_t0,vge_t0,vgbe_t0,vgbc0,vgsc0; + real cbcpar1,cbcpar2,cbepar2,cbepar1,Oich,Ovpt,Otbhrec; + + //Charges, capacitances and currents + real Qjci,Qjei,Qjep; + real it,ibei,irei,ibci,ibep,irep,ibh_rec; + real Qdei,Qdci,qrbi; + real ibet,iavl; + real ijbcx,ijsc,Qjs,HSUM,HSI_Tsu,Qdsu; + + //Base resistance and self-heating power + real rbi,pterm; + + //Variables for macro TMPHICJ + real vdj0,vdjt,vdt; + + //Model initialization + real k10,k20,C_1; + + //Model evaluation + real Cjci,Cjcit,cc,Cjei,Cjep; + real itf,itr,Tf,Tr,VT_f,i_0f,i_0r,a_bpt,Q_0,Q_p,Q_bpt; + real Orci0_t,b_q,Q_fC,T_fC,T_cT,I_Tf1,T_f0,Q_fT,T_fT,Q_bf; + real ICKa,d1; + real A,a_h,Q_pT,d_Q,d_Q0; + real Qf,Cdei,Qr,Cdci,Crbi; + real ick,vc,vceff,cjcx01,cjcx02,HSa,HSb; + integer l_it; + + //Variables for macros + real DIOY,le;//HICDIO + real FFT_fbS,FFa,FFx,FFs,FFw,FFw_2,FFd_QfB,FFd_TfB,FFT_pcS,FFQ_fC,FFT_fC,FFQ_cT,FFT_cT,FFd_TfE,FFd_QfE,FFa_w;//HICQFF + real FCz,FCw2,FCf1,FCf2,FCf3,FCf_ci,FCz_1,FCa1,FCa_ck,FCxl,FCxb;//HICQFC + real FCd_a,FCdaick_ditf,FCa,FCw,FCdw_daick,FCdfc_dw,FCdw_ditf,FCdfc_ditf,FCf_CT,FCdfCT_ditf,FCrt,FCln,lnz,FCda1_dw,FCdf1_dw,FCdf2_dw,FCdf3_dw,FCd_f,FCdfCT_dw;//HICQFC + real Dz_r,Dv_p,DV_f,DC_max,DC_c,Da,Dv_e,De,De_1,Dv_j1,Dv_r,De_2,Dv_j2,Dv_j4,DQ_j1,DQ_j2,DQ_j3,DCln1,DCln2,Dz1,Dzr1,DC_j1,DC_j2,DC_j3;//QJMOD + real DFV_f,DFv_e,DFv_j,DFb,DFQ_j,DFs_q,DFs_q2,DFdvj_dv,DFC_j1;//QJMODF + real z,a2,a3,r,x;//HICFCI + real zb,zl,lnzb,w,hicfcio,dhicfcio_dw; //HICFCT + + //Noise + real fourkt,twoq,flicker_Pwr; + real thermal_Rbx,thermal_Rbi,thermal_Rcx,thermal_Re,betad,betan,betadin,betadc,icn,icn1,icn2; + + //NQS + real Ixf1,Ixf2,Qxf1,Qxf2,Vxf1,Vxf2,Itxf,TD1,Qdeix; + real T, Vxf, Ixf, Qxf,fact; + + real pocce,czz; + real Qz_nom,f_QR,ETA,Qz0,fQz; + real v_bord,v_q,U0,av,avl; + real cV_f,cv_e,cs_q,cs_q2,cv_j,cdvj_dv; + real a_eg,ab,aa; + + //end of variables + +analog begin + +`MODEL begin : Model_initialization + + Tnom = tnom+`P_CELSIUS0; + Tamb = $temperature; + vt0 = `P_K*Tnom /`P_Q; + k10 = f1vg*Tnom*ln(Tnom); + k20 = f2vg*Tnom; + avs = alvs*Tnom; + vgb_t0 = vgb+k10+k20; + vge_t0 = vge+k10+k20; + vgbe_t0 = (vgb_t0+vge_t0)/2; + vgbe0 = (vgb+vge)/2; + vgbc0 = (vgb+vgc)/2; + vgsc0 = (vgs+vgc)/2; + mg = 3-`P_Q*f1vg/`P_K; + zetabci = mg+1-zetaci; + zetabcxt= mg+1-zetacx; + zetasct = mg-1.5; + + //Depletion capacitance splitting at b-c junction + //Capacitances at peripheral and external base node + C_1 = (1.0-fbcpar)*(cjcx0+cbcpar); + if (C_1 >= cbcpar) begin + cbcpar1 = cbcpar; + cbcpar2 = 0.0; + cjcx01 = C_1-cbcpar; + cjcx02 = cjcx0-cjcx01; + end else begin + cbcpar1 = C_1; + cbcpar2 = cbcpar-cbcpar1; + cjcx01 = 0.0; + cjcx02 = cjcx0; + end + + //Parasitic b-e capacitance partitioning: No temperature dependence + cbepar2 = fbepar*cbepar; + cbepar1 = cbepar-cbepar2; + + //Avoid devide-by-zero and define infinity other way + //High current correction for 2D and 3D effects + if (ich != 0.0) begin + Oich = 1.0/ich; + end else begin + Oich = 0.0; + end + + //Base current recombination time constant at b-c barrier + if (tbhrec != 0.0) begin + Otbhrec = 1.0/tbhrec; + end else begin + Otbhrec = 0.0; + end + + // Temperature and resulting parameter drift + if (flsh==0 || rth < `MIN_R) begin : Thermal_updat_without_self_heating + Tdev = Tamb+dt; + if(Tdev < `TMIN + 273.15) begin + Tdev = `TMIN + 273.15; + end else begin + if (Tdev > `TMAX + 273.15) begin + Tdev = `TMAX + 273.15; + end + end + VT = `P_K*Tdev /`P_Q; + dT = Tdev-Tnom; + qtt0 = Tdev/Tnom; + ln_qtt0 = ln(qtt0); + k1 = f1vg*Tdev*ln(Tdev); + k2 = f2vg*Tdev; + vgb_t = vgb+k1+k2; + vge_t = vge+k1+k2; + vgbe_t = (vgb_t+vge_t)/2; + + //Internal b-e junction capacitance + `TMPHICJ(cjei0,vdei,zei,ajei,1,vgbe0,cjei0_t,vdei_t,ajei_t) + + if (flcomp == 0.0 || flcomp == 2.1) begin + V_gT = 3.0*VT*ln_qtt0 + vgb*(qtt0-1.0); + r_VgVT = V_gT/VT; + //Internal b-e diode saturation currents + a = mcf*r_VgVT/mbei - alb*dT; + ibeis_t = ibeis*exp(a); + a = mcf*r_VgVT/mrei - alb*dT; + ireis_t = ireis*exp(a); + a = mcf*r_VgVT/mbep - alb*dT; + //Peripheral b-e diode saturation currents + ibeps_t = ibeps*exp(a); + a = mcf*r_VgVT/mrep - alb*dT; + ireps_t = ireps*exp(a); + //Internal b-c diode saturation current + a = r_VgVT/mbci; + ibcis_t = ibcis*exp(a); + //External b-c diode saturation currents + a = r_VgVT/mbcx; + ibcxs_t = ibcxs*exp(a); + //Saturation transfer current for substrate transistor + a = r_VgVT/msf; + itss_t = itss*exp(a); + //Saturation current for c-s diode + a = r_VgVT/msc; + iscs_t = iscs*exp(a); + //Zero bias hole charge + a = vdei_t/vdei; + qp0_t = qp0*(1.0+0.5*zei*(1.0-a)); + //Voltage separating ohmic and saturation velocity regime + a = vlim*(1.0-alvs*dT)*exp(zetaci*ln_qtt0); + k = (a-VT)/VT; + if (k < `LN_EXP_LIMIT) begin + vlim_t = VT + VT*ln(1.0+exp(k)); + end else begin + vlim_t = a; + end + //Neutral emitter storage time + a = 1.0+alb*dT; + k = 0.5*(a+sqrt(a*a+0.01)); + tef0_t = tef0*qtt0/k; + end else begin + //Internal b-e diode saturation currents + ibeis_t = ibeis*exp(zetabet*ln_qtt0+vge/VT*(qtt0-1)); + ireis_t = ireis*exp(0.5*mg*ln_qtt0+0.5*vgbe0/VT*(qtt0-1)); + //Peripheral b-e diode saturation currents + ibeps_t = ibeps*exp(zetabet*ln_qtt0+vge/VT*(qtt0-1)); + ireps_t = ireps*exp(0.5*mg*ln_qtt0+0.5*vgbe0/VT*(qtt0-1)); + //Internal b-c diode saturation currents + ibcis_t = ibcis*exp(zetabci*ln_qtt0+vgc/VT*(qtt0-1)); + //External b-c diode saturation currents + ibcxs_t = ibcxs*exp(zetabcxt*ln_qtt0+vgc/VT*(qtt0-1)); + //Saturation transfer current for substrate transistor + itss_t = itss*exp(zetasct*ln_qtt0+vgc/VT*(qtt0-1)); + //Saturation current for c-s diode + iscs_t = iscs*exp(zetasct*ln_qtt0+vgs/VT*(qtt0-1)); + //Zero bias hole charge + a = exp(zei*ln(vdei_t/vdei)); + qp0_t = qp0*(2.0-a); + //Voltage separating ohmic and saturation velocity regime + vlim_t = vlim*exp((zetaci-avs)*ln_qtt0); + //Neutral emitter storage time + zetatef = zetabet-zetact-0.5; + dvg0 = vgb-vge; + tef0_t = tef0*exp(zetatef*ln_qtt0-dvg0/VT*(qtt0-1)); + end + + //GICCR prefactor + c10_t = c10*exp(zetact*ln_qtt0+vgb/VT*(qtt0-1)); + + // Low-field internal collector resistance + rci0_t = rci0*exp(zetaci*ln_qtt0); + + //Voltage separating ohmic and saturation velocity regime + //vlim_t = vlim*exp((zetaci-avs)*ln_qtt0); + + //Internal c-e saturation voltage + vces_t = vces*(1+alces*dT); + + + //Internal b-c diode saturation current + //ibcis_t = ibcis*exp(zetabci*ln_qtt0+vgc/VT*(qtt0-1)); + + //Internal b-c junction capacitance + `TMPHICJ(cjci0,vdci,zci,vptci,0,vgbc0,cjci0_t,vdci_t,vptci_t) + + //Low-current forward transit time + t0_t = t0*(1+alt0*dT+kt0*dT*dT); + + //Saturation time constant at high current densities + thcs_t = thcs*exp((zetaci-1)*ln_qtt0); + + + //Avalanche caurrent factors + favl_t = favl*exp(alfav*dT); + qavl_t = qavl*exp(alqav*dT); + + //Zero bias internal base resistance + rbi0_t = rbi0*exp(zetarbi*ln_qtt0); + + + //Peripheral b-e junction capacitance + `TMPHICJ(cjep0,vdep,zep,ajep,1,vgbe0,cjep0_t,vdep_t,ajep_t) + + //Tunneling current factors + begin : HICTUN_T +// real a_eg,ab,aa; + ab = 1.0; + aa = 1.0; + a_eg=vgbe_t0/vgbe_t; + if(tunode==1 && cjep0 > 0.0 && vdep >0.0) begin + ab = (cjep0_t/cjep0)*sqrt(a_eg)*vdep_t*vdep_t/(vdep*vdep); + aa = (vdep/vdep_t)*(cjep0/cjep0_t)*pow(a_eg,-1.5); + end else if (tunode==0 && cjei0 > 0.0 && vdei >0.0) begin + ab = (cjei0_t/cjei0)*sqrt(a_eg)*vdei_t*vdei_t/(vdei*vdei); + aa = (vdei/vdei_t)*(cjei0/cjei0_t)*pow(a_eg,-1.5); + end + ibets_t = ibets*ab; + abet_t = abet*aa; + end + + + //Temperature mapping for tunneling current is done inside HICTUN + + `TMPHICJ(1.0,vdcx,zcx,vptcx,0,vgbc0,cratio_t,vdcx_t,vptcx_t) + cjcx01_t=cratio_t*cjcx01; + cjcx02_t=cratio_t*cjcx02; + + + //External b-c diode saturation currents + //ibcxs_t = ibcxs*exp(zetabcxt*ln_qtt0+vgc/VT*(qtt0-1)); + + + //Constant external series resistances + rcx_t = rcx*exp(zetarcx*ln_qtt0); + rbx_t = rbx*exp(zetarbx*ln_qtt0); + re_t = re*exp(zetare*ln_qtt0); + + //Forward transit time in substrate transistor + tsf_t = tsf*exp((zetacx-1.0)*ln_qtt0); + + //Capacitance for c-s junction + `TMPHICJ(cjs0,vds,zs,vpts,0,vgsc0,cjs0_t,vds_t,vpts_t) + + end // of Thermal_update_without_self_heating + +end //of Model_initialization + +if (flsh!=0 && rth >= `MIN_R) begin : Thermal_update_with_self_heating + Tdev = Tamb+dt+V(br_sht); + // Limit temperature to avoid FPEs in equations + if(Tdev < `TMIN + 273.15) begin + Tdev = `TMIN + 273.15; + end else begin + if (Tdev > `TMAX + 273.15) begin + Tdev = `TMAX + 273.15; + end + end + VT = `P_K*Tdev /`P_Q; + dT = Tdev-Tnom; + qtt0 = Tdev/Tnom; + ln_qtt0 = ln(qtt0); + k1 = f1vg*Tdev*ln(Tdev); + k2 = f2vg*Tdev; + vgb_t = vgb+k1+k2; + vge_t = vge+k1+k2; + vgbe_t = (vgb_t+vge_t)/2; + + //Internal b-e junction capacitance + `TMPHICJ(cjei0,vdei,zei,ajei,1,vgbe0,cjei0_t,vdei_t,ajei_t) + + if (flcomp == 0.0 || flcomp == 2.1) begin + V_gT = 3.0*VT*ln_qtt0 + vgb*(qtt0-1.0); + r_VgVT = V_gT/VT; + //Internal b-e diode saturation currents + a = mcf*r_VgVT/mbei - alb*dT; + ibeis_t = ibeis*exp(a); + a = mcf*r_VgVT/mrei - alb*dT; + ireis_t = ireis*exp(a); + a = mcf*r_VgVT/mbep - alb*dT; + //Peripheral b-e diode saturation currents + ibeps_t = ibeps*exp(a); + a = mcf*r_VgVT/mrep - alb*dT; + ireps_t = ireps*exp(a); + //Internal b-c diode saturation current + a = r_VgVT/mbci; + ibcis_t = ibcis*exp(a); + //External b-c diode saturation currents + a = r_VgVT/mbcx; + ibcxs_t = ibcxs*exp(a); + //Saturation transfer current for substrate transistor + a = r_VgVT/msf; + itss_t = itss*exp(a); + //Saturation current for c-s diode + a = r_VgVT/msc; + iscs_t = iscs*exp(a); + //Zero bias hole charge + a = vdei_t/vdei; + qp0_t = qp0*(1.0+0.5*zei*(1.0-a)); + //Voltage separating ohmic and saturation velocity regime + a = vlim*(1.0-alvs*dT)*exp(zetaci*ln_qtt0); + k = (a-VT)/VT; + if (k < `LN_EXP_LIMIT) begin + vlim_t = VT + VT*ln(1.0+exp(k)); + end else begin + vlim_t = a; + end + //Neutral emitter storage time + a = 1.0+alb*dT; + k = 0.5*(a+sqrt(a*a+0.01)); + tef0_t = tef0*qtt0/k; + end else begin + //Internal b-e diode saturation currents + ibeis_t = ibeis*exp(zetabet*ln_qtt0+vge/VT*(qtt0-1)); + ireis_t = ireis*exp(0.5*mg*ln_qtt0+0.5*vgbe0/VT*(qtt0-1)); + //Peripheral b-e diode saturation currents + ibeps_t = ibeps*exp(zetabet*ln_qtt0+vge/VT*(qtt0-1)); + ireps_t = ireps*exp(0.5*mg*ln_qtt0+0.5*vgbe0/VT*(qtt0-1)); + //Internal b-c diode saturation currents + ibcis_t = ibcis*exp(zetabci*ln_qtt0+vgc/VT*(qtt0-1)); + //External b-c diode saturation currents + ibcxs_t = ibcxs*exp(zetabcxt*ln_qtt0+vgc/VT*(qtt0-1)); + //Saturation transfer current for substrate transistor + itss_t = itss*exp(zetasct*ln_qtt0+vgc/VT*(qtt0-1)); + //Saturation current for c-s diode + iscs_t = iscs*exp(zetasct*ln_qtt0+vgs/VT*(qtt0-1)); + //Zero bias hole charge + a = exp(zei*ln(vdei_t/vdei)); + qp0_t = qp0*(2.0-a); + //Voltage separating ohmic and saturation velocity regime + vlim_t = vlim*exp((zetaci-avs)*ln_qtt0); + //Neutral emitter storage time + zetatef = zetabet-zetact-0.5; + dvg0 = vgb-vge; + tef0_t = tef0*exp(zetatef*ln_qtt0-dvg0/VT*(qtt0-1)); + end + + //GICCR prefactor + c10_t = c10*exp(zetact*ln_qtt0+vgb/VT*(qtt0-1)); + + // Low-field internal collector resistance + rci0_t = rci0*exp(zetaci*ln_qtt0); + + //Voltage separating ohmic and saturation velocity regime + //vlim_t = vlim*exp((zetaci-avs)*ln_qtt0); + + //Internal c-e saturation voltage + vces_t = vces*(1+alces*dT); + + + //Internal b-c diode saturation current + //ibcis_t = ibcis*exp(zetabci*ln_qtt0+vgc/VT*(qtt0-1)); + + //Internal b-c junction capacitance + `TMPHICJ(cjci0,vdci,zci,vptci,0,vgbc0,cjci0_t,vdci_t,vptci_t) + + //Low-current forward transit time + t0_t = t0*(1+alt0*dT+kt0*dT*dT); + + //Saturation time constant at high current densities + thcs_t = thcs*exp((zetaci-1)*ln_qtt0); + + + //Avalanche caurrent factors + favl_t = favl*exp(alfav*dT); + qavl_t = qavl*exp(alqav*dT); + + //Zero bias internal base resistance + rbi0_t = rbi0*exp(zetarbi*ln_qtt0); + + + //Peripheral b-e junction capacitance + `TMPHICJ(cjep0,vdep,zep,ajep,1,vgbe0,cjep0_t,vdep_t,ajep_t) + + //Tunneling current factors + if (V(br_bpei) < 0.0 || V(br_biei) < 0.0) begin : HICTUN_T +// real a_eg,ab,aa; + ab = 1.0; + aa = 1.0; + a_eg=vgbe_t0/vgbe_t; + if(tunode==1 && cjep0 > 0.0 && vdep >0.0) begin + ab = (cjep0_t/cjep0)*sqrt(a_eg)*vdep_t*vdep_t/(vdep*vdep); + aa = (vdep/vdep_t)*(cjep0/cjep0_t)*pow(a_eg,-1.5); + end else if (tunode==0 && cjei0 > 0.0 && vdei >0.0) begin + ab = (cjei0_t/cjei0)*sqrt(a_eg)*vdei_t*vdei_t/(vdei*vdei); + aa = (vdei/vdei_t)*(cjei0/cjei0_t)*pow(a_eg,-1.5); + end + ibets_t = ibets*ab; + abet_t = abet*aa; + end + + + //Temperature mapping for tunneling current is done inside HICTUN + + `TMPHICJ(1.0,vdcx,zcx,vptcx,0,vgbc0,cratio_t,vdcx_t,vptcx_t) + cjcx01_t=cratio_t*cjcx01; + cjcx02_t=cratio_t*cjcx02; + + + //External b-c diode saturation currents + //ibcxs_t = ibcxs*exp(zetabcxt*ln_qtt0+vgc/VT*(qtt0-1)); + + + //Constant external series resistances + rcx_t = rcx*exp(zetarcx*ln_qtt0); + rbx_t = rbx*exp(zetarbx*ln_qtt0); + re_t = re*exp(zetare*ln_qtt0); + + //Forward transit time in substrate transistor + tsf_t = tsf*exp((zetacx-1.0)*ln_qtt0); + + //Capacitance for c-s junction + `TMPHICJ(cjs0,vds,zs,vpts,0,vgsc0,cjs0_t,vds_t,vpts_t) + +end //of Thermal_update_with_self_heating + + +begin : Model_evaluation + + //Intrinsic transistor + //Internal base currents across b-e junction + `HICDIO(ibeis,ibeis_t,mbei,V(br_biei),ibei) + `HICDIO(ireis,ireis_t,mrei,V(br_biei),irei) + + //HICCR: begin + + //Inverse of low-field internal collector resistance: needed in HICICK + Orci0_t = 1.0/rci0_t; + + //Initialization + //Transfer current, minority charges and transit times + + Tr = tr; + VT_f = mcf*VT; + i_0f = c10_t * limexp(V(br_biei)/VT_f); + i_0r = c10_t * limexp(V(br_bici)/VT); + + //Internal b-e and b-c junction capacitances and charges + //`QJMODF(cjei0_t,vdei_t,zei,ajei_t,V(br_biei),Qjei) + //Cjei = ddx(Qjei,V(bi)); + `QJMODF(cjei0_t,vdei_t,zei,ajei_t,V(br_biei),Cjei,Qjei) + + //`HICJQ(cjci0_t,vdci_t,zci,vptci_t,V(br_bici),Qjci) + //Cjci = ddx(Qjci,V(bi)); + `HICJQ(cjci0_t,vdci_t,zci,vptci_t,V(br_bici),Cjci,Qjci) + + //Hole charge at low bias + a_bpt = 0.05; + Q_0 = qp0_t + hjei*Qjei + hjci*Qjci; + Q_bpt = a_bpt*qp0_t; + b_q = Q_0/Q_bpt-1; + Q_0 = Q_bpt*(1+(b_q +sqrt(b_q*b_q+1.921812))/2); + + //Transit time calculation at low current density + if(cjci0_t > 0.0) begin : CJMODF +// real cV_f,cv_e,cs_q,cs_q2,cv_j,cdvj_dv; + cV_f = vdci_t*(1.0-exp(-ln(2.4)/zci)); + cv_e = (cV_f-V(br_bici))/VT; + cs_q = sqrt(cv_e*cv_e+1.921812); + cs_q2 = (cv_e+cs_q)*0.5; + cv_j = cV_f-VT*cs_q2; + cdvj_dv = cs_q2/cs_q; + Cjcit = cjci0_t*exp(-zci*ln(1.0-cv_j/vdci_t))*cdvj_dv+2.4*cjci0_t*(1.0-cdvj_dv); + end else begin + Cjcit = 0.0; + end + if(Cjcit > 0.0) begin + cc = cjci0_t/Cjcit; + end else begin + cc = 1.0; + end + T_f0 = t0_t+dt0h*(cc-1.0)+tbvl*(1/cc-1.0); + + //Effective collector voltage + vc = V(br_ciei)-vces_t; + + //Critical current for onset of high-current effects + begin : HICICK + Ovpt = 1.0/vpt; + a = vc/VT; + d1 = a-1; + vceff = (1.0+((d1+sqrt(d1*d1+1.921812))/2))*VT; + a = vceff/vlim_t; + ick = vceff*Orci0_t/sqrt(1.0+a*a); + ICKa = (vceff-vlim_t)*Ovpt; + ick = ick*(1.0+0.5*(ICKa+sqrt(ICKa*ICKa+1.0e-3))); + end + + //Initial formulation of forward and reverse component of transfer current + Q_p = Q_0; + if (T_f0 > 0.0 || Tr > 0.0) begin + A = 0.5*Q_0; + Q_p = A+sqrt(A*A+T_f0*i_0f+Tr*i_0r); + end + I_Tf1 =i_0f/Q_p; + a_h = Oich*I_Tf1; + itf = I_Tf1*(1.0+a_h); + itr = i_0r/Q_p; + + //Initial formulation of forward transit time, diffusion, GICCR and excess b-c charge + Q_bf = 0.0; + Tf = T_f0; + Qf = T_f0*itf; + `HICQFF(itf,ick,Tf,Qf,T_fT,Q_fT,Q_bf) + + //Initial formulation of reverse diffusion charge + Qr = Tr*itr; + + //Preparation for iteration to get total hole charge and related variables + l_it = 0; + if(Qf > `RTOLC*Q_p || a_h > `RTOLC) begin + //Iteration for Q_pT is required for improved initial solution + Qf = sqrt(T_f0*itf*Q_fT); + Q_pT = Q_0+Qf+Qr; + d_Q = Q_pT; + while (abs(d_Q) >= `RTOLC*abs(Q_pT) && l_it <= `l_itmax) begin + d_Q0 = d_Q; + I_Tf1 = i_0f/Q_pT; + a_h = Oich*I_Tf1; + itf = I_Tf1*(1.0+a_h); + itr = i_0r/Q_pT; + Tf = T_f0; + Qf = T_f0*itf; + `HICQFF(itf,ick,Tf,Qf,T_fT,Q_fT,Q_bf) + Qr = Tr*itr; + if(Oich == 0.0) begin + a = 1.0+(T_fT*itf+Qr)/Q_pT; + end else begin + a = 1.0+(T_fT*I_Tf1*(1.0+2.0*a_h)+Qr)/Q_pT; + end + d_Q = -(Q_pT-(Q_0+Q_fT+Qr))/a; + //Limit maximum change of Q_pT + a = abs(0.3*Q_pT); + if(abs(d_Q) > a) begin + if (d_Q>=0) begin + d_Q = a; + end else begin + d_Q = -a; + end + end + Q_pT = Q_pT+d_Q; + l_it = l_it+1; + end //while + + I_Tf1 = i_0f/Q_pT; + a_h = Oich*I_Tf1; + itf = I_Tf1*(1.0+a_h); + itr = i_0r/Q_pT; + + //Final transit times, charges and transport current components + Tf = T_f0; + Qf = T_f0*itf; + `HICQFF(itf,ick,Tf,Qf,T_fT,Q_fT,Q_bf) + Qr = Tr*itr; + + end //if + + //NQS effect implemented with LCR networks + //Once the delay in ITF is considered, IT_NQS is calculated afterwards + + it = itf-itr; + + //Diffusion charges for further use + Qdei = Qf; + Qdci = Qr; + + + //High-frequency emitter current crowding (lateral NQS) + Cdei = -1*ddx(Qdei,V(ei)); + Cdci = -1*ddx(Qdci,V(ci)); + Crbi = fcrbi*(Cjei+Cjci+Cdei+Cdci); + qrbi = Crbi*V(br_bpbi_v); + +// qrbi = fcrbi*(Qjei+Qjci+Qdei+Qdci); + + //HICCR: end + + //Internal base current across b-c junction + `HICDIO(ibcis,ibcis_t,mbci,V(br_bici),ibci) + + //Avalanche current + if((V(br_bici) < 0.0) && (favl_t > 0.0) && (cjci0_t > 0.0)) begin : HICAVL +// real v_bord,v_q,U0,av,avl; + v_bord = vdci_t-V(br_bici); + v_q = qavl_t/Cjci; + U0 = qavl_t/cjci0_t; + if(v_bord > U0) begin + av = favl_t*exp(-v_q/U0); + avl = av*(U0+(1.0+v_q/U0)*(v_bord-U0)); + end else begin + avl = favl_t*v_bord*exp(-v_q/v_bord); + end + iavl = itf*avl; + end else begin + iavl = 0.0; + end + + //Excess base current from recombination at the b-c barrier + ibh_rec = Q_bf*Otbhrec; + + //Internal base resistance + if(rbi0_t > 0.0) begin : HICRBI +// real Qz_nom,f_QR,ETA,Qz0,fQz; + // Consideration of conductivity modulation + // To avoid convergence problem hyperbolic smoothing used + f_QR = (1+fdqr0)*qp0_t; + Qz0 = Qjei+Qjci+Qf; + Qz_nom = 1+Qz0/f_QR; + fQz = 0.5*(Qz_nom+sqrt(Qz_nom*Qz_nom+0.01)); + rbi = rbi0_t/fQz; + // Consideration of emitter current crowding + if( ibei > 0.0) begin + ETA = rbi*ibei*fgeo/VT; + if(ETA < 1.0e-6) begin + rbi = rbi*(1.0-0.5*ETA); + end else begin + rbi = rbi*ln(1.0+ETA)/ETA; + end + end + // Consideration of peripheral charge + if(Qf > 0.0) begin + rbi = rbi*(Qjei+Qf*fqi)/(Qjei+Qf); + end + end else begin + rbi = 0.0; + end + + //Base currents across peripheral b-e junction + `HICDIO(ibeps,ibeps_t,mbep,V(br_bpei),ibep) + `HICDIO(ireps,ireps_t,mrep,V(br_bpei),irep) + + //Peripheral b-e junction capacitance and charge + `QJMODF(cjep0_t,vdep_t,zep,ajep_t,V(br_bpei),Cjep,Qjep) + + //Tunelling current + if (V(br_bpei) <0.0 || V(br_biei) < 0.0) begin : HICTUN +// real pocce,czz; + if(tunode==1 && cjep0_t > 0.0 && vdep_t >0.0) begin + pocce = exp((1-1/zep)*ln(Cjep/cjep0_t)); + czz = -(V(br_bpei)/vdep_t)*ibets_t*pocce; + ibet = czz*exp(-abet_t/pocce); + end else if (tunode==0 && cjei0_t > 0.0 && vdei_t >0.0) begin + pocce = exp((1-1/zei)*ln(Cjei/cjei0_t)); + czz = -(V(br_biei)/vdei_t)*ibets_t*pocce; + ibet = czz*exp(-abet_t/pocce); + end else begin + ibet = 0.0; + end + end else begin + ibet = 0.0; + end + + + //Depletion capacitance and charge at peripheral b-c junction (bp,ci) + `HICJQ(cjcx02_t,vdcx_t,zcx,vptcx_t,V(br_bpci),c_dummy,qjcx0_t_ii) + + //Base currents across peripheral b-c junction (bp,ci) + `HICDIO(ibcxs,ibcxs_t,mbcx,V(br_bpci),ijbcx) + + //Depletion capacitance and charge at external b-c junction (b,ci) + `HICJQ(cjcx01_t,vdcx_t,zcx,vptcx_t,V(br_bci),c_dummy,qjcx0_t_i) + + //Depletion substrate capacitance and charge at s-c junction (si,ci) + `HICJQ(cjs0_t,vds_t,zs,vpts_t,V(br_sici),c_dummy,Qjs) + + //Parasitic substrate transistor transfer current and diffusion charge + if(itss > 0.0) begin : Sub_Transfer + HSUM = msf*VT; + HSa = limexp(V(br_bpci)/HSUM); + HSb = limexp(V(br_sici)/HSUM); + HSI_Tsu = itss_t*(HSa-HSb); + if(tsf > 0.0) begin + Qdsu = tsf_t*itss_t*HSa; + end else begin + Qdsu = 0.0; + end + end else begin + HSI_Tsu = 0.0; + Qdsu = 0.0; + end + + // Current gain computation for correlated noise implementation + betad=ibei; + if (betad > 0.0) begin + betadin=betad; + betan=it; + betadc=betan/betad; + end else begin + betadc=0.0; + end + + //Diode current for s-c junction (si,ci) + `HICDIO(iscs,iscs_t,msc,V(br_sici),ijsc) + + //Self-heating calculation + if (flsh == 1 && rth >= `MIN_R) begin + pterm = V(br_ciei)*it + (vdci_t-V(br_bici))*iavl; + end else if (flsh == 2 && rth >= `MIN_R) begin + pterm = V(br_ciei)*it + (vdci_t-V(br_bici))*iavl + ibei*V(br_biei) + ibci*V(br_bici) + ibep*V(br_bpei) + ijbcx*V(br_bpci) + ijsc*V(br_sici); + if (rbi >= `MIN_R) begin + pterm = pterm + V(br_bpbi_i)*V(br_bpbi_i)/rbi; + end + if (re_t >= `MIN_R) begin + pterm = pterm + V(br_eie_i)*V(br_eie_i)/re_t; + end + if (rcx_t >= `MIN_R) begin + pterm = pterm + V(br_cic_i)*V(br_cic_i)/rcx_t; + end + if (rbx_t >= `MIN_R) begin + pterm = pterm + V(br_bbp_i)*V(br_bbp_i)/rbx_t; + end + end + + Itxf = itf; + Qdeix = Qdei; + // Excess Phase calculation + + if (flnqs != 0 && Tf != 0) begin + Vxf1 = V(br_bxf1); + Vxf2 = V(br_bxf2); + + Ixf1 = (Vxf2-itf)/Tf*t0; + Ixf2 = (Vxf2-Vxf1)/Tf*t0; + Qxf1 = alit*Vxf1*t0; + Qxf2 = alit*Vxf2/3*t0; + Itxf = Vxf2; + + Vxf = V(br_bxf); //for RC nw + fact = t0/Tf; //for RC nw + Ixf = (Vxf - Qdei)*fact; //for RC nw + Qxf = alqf*Vxf*t0; //for RC nw + Qdeix = Vxf; //for RC nw + end else begin + Ixf1 = V(br_bxf1); + Ixf2 = V(br_bxf2); + Qxf1 = 0; + Qxf2 = 0; + + Ixf = V(br_bxf); + Qxf = 0; + end + +end //of Model_evaluation + +begin : Load_sources + + I(br_biei) <+ _circuit_gmin*V(br_biei); + I(br_bici) <+ _circuit_gmin*V(br_bici); + + I(br_bci) <+ ddt(qjcx0_t_i); + I(br_bci) <+ ddt(cbcpar1*V(br_bci)); + I(br_bpci) <+ ddt(cbcpar2*V(br_bpci)); + if (rbx >= `MIN_R) begin + I(br_bbp_i) <+ V(br_bbp_i)/rbx_t; + end else begin +// V(br_bbp_v) <+ 0.0; + I(br_bbp_i) <+ V(br_bbp_i)/`MIN_R; + end + if(rbi0 >= `MIN_R) begin + I(br_bpbi_i) <+ V(br_bpbi_i)/rbi; + I(br_bpbi_i) <+ ddt(qrbi); + end else begin +// V(br_bpbi_v) <+ 0.0; + I(br_bpbi_i) <+ V(br_bpbi_i)/`MIN_R; + end + if (tunode==1.0) begin + I(br_bpei) <+ -ibet; + end else begin + I(br_biei) <+ -ibet; + end + I(br_bpei) <+ ibep; + I(br_bpei) <+ irep; + I(br_bpei) <+ ddt(Qjep); + I(br_biei) <+ ibei; + I(br_biei) <+ irei; + I(br_biei) <+ ibh_rec; + I(br_biei) <+ ddt(Qdeix+Qjei); + I(br_bpsi) <+ HSI_Tsu; + I(br_bpci) <+ ijbcx; + I(br_bpci) <+ ddt(qjcx0_t_ii+Qdsu); + I(br_be) <+ ddt(cbepar1*V(br_be)); + I(br_bpe) <+ ddt(cbepar2*V(br_bpe)); + I(br_bici) <+ ibci-iavl; + I(br_bici) <+ ddt(Qdci+Qjci); + I(br_sici) <+ ijsc; + I(br_sici) <+ ddt(Qjs); + I(br_ciei) <+ Itxf; + I(br_eici) <+ itr; + if (rcx >= `MIN_R) begin + I(br_cic_i) <+ V(br_cic_i)/rcx_t; + end else begin +// V(br_cic_v) <+ 0.0; + I(br_cic_i) <+ V(br_cic_i)/`MIN_R; + end + if (re >= `MIN_R) begin + I(br_eie_i) <+ V(br_eie_i)/re_t; + end else begin +// V(br_eie_v) <+ 0.0; + I(br_eie_i) <+ V(br_eie_i)/`MIN_R; + end + if(rsu >= `MIN_R) begin + I(br_sis_i) <+ V(br_sis_i)/rsu; + I(br_sis_i) <+ ddt(csu*V(br_sis_i)); + end else begin +// V(br_sis_v) <+ 0.0; + I(br_sis_i) <+ V(br_sis_i)/`MIN_R; + end + + // Following code is an intermediate solution (if branch contribution is not supported): + // ****************************************** + if(flsh == 0 || rth < `MIN_R) begin + I(br_sht) <+ V(br_sht)/`MIN_R; + end else begin + I(br_sht) <+ V(br_sht)/rth-pterm; + I(br_sht) <+ ddt(cth*V(br_sht)); + end + + // ****************************************** + + // For simulators having no problem with V(br_sht) <+ 0.0 + // with external thermal node, follwing code may be used. + // Note that external thermal node should remain accessible + // even without self-heating. + // ******************************************** + //if(flsh == 0 || rth < `MIN_R) begin + // V(br_sht) <+ 0.0; + //end else begin + // I(br_sht) <+ V(br_sht)/rth-pterm; + // I(br_sht) <+ ddt(cth*V(br_sht)); + //end + // ******************************************** + + // NQS effect + I(br_bxf1) <+ Ixf1; + I(br_cxf1) <+ ddt(Qxf1); + I(br_bxf2) <+ Ixf2; + I(br_cxf2) <+ ddt(Qxf2); + + I(br_bxf) <+ Ixf; //for RC nw + I(br_cxf) <+ ddt(Qxf); //for RC nw + +end //of Load_sources + + +`NOISE begin : Noise_sources + + //Thermal noise + fourkt = 4.0 * `P_K * Tdev; + if(rbx >= `MIN_R) begin + I(br_bbp_i) <+ white_noise(fourkt/rbx_t, "thermal"); + end + if(rbi0 >= `MIN_R) begin + I(br_bpbi_i) <+ white_noise(fourkt/rbi, "thermal"); + end + if(rcx >= `MIN_R) begin + I(br_cic_i) <+ white_noise(fourkt/rcx_t, "thermal"); + end + if(re >= `MIN_R) begin + I(br_eie_i) <+ white_noise(fourkt/re_t, "thermal"); + end + if(rsu >= `MIN_R) begin + I(br_sis_i) <+ white_noise(fourkt/rsu, "thermal"); + end + + //Flicker noise : Fully correlated between the perimeter and internal base-node + flicker_Pwr = kf*pow((ibei+ibep),af); + if (cfbe == -1) begin + I(br_biei) <+ flicker_noise(flicker_Pwr,1.0); + end else begin + I(br_bpei) <+ flicker_noise(flicker_Pwr,1.0); + end + + //Shot noise + + twoq = 2.0 * `P_Q; + // I(br_ciei) <+ white_noise(twoq*it, "shot"); + I(br_cibi) <+ white_noise(twoq*iavl, "shot"); + + // I(br_biei) <+ white_noise(twoq*ibei, "shot"); + + I(br_bici) <+ white_noise(twoq*abs(ibci), "shot"); + + I(br_bpei) <+ white_noise(twoq*ibep, "shot"); + + I(br_bpci) <+ white_noise(twoq*abs(ijbcx), "shot"); + + I(br_sici) <+ white_noise(twoq*abs(ijsc), "shot"); + + // Code section for correlated noise + // Please turn-off this code section by "//" in order to run the code with Spectre + +// I(b_n1) <+ white_noise(2 * `P_Q * ibei, "shot"); +// I(b_n1) <+ V(b_n1); +// I(b_n2) <+ white_noise(2 * `P_Q * it, "shot"); +// I(b_n2) <+ V(b_n2); +// +// I(bi,ei) <+ V(b_n1); +// I(ci,ei) <+ V(b_n2)+ddt((betadc/2)*alit*Tf*alit*Tf*ddt(V(b_n2))); +// I(ci,ei) <+ betadc*ddt(-(Tf*alit)*V(b_n1)); +end //of Noise_sources + +end //analog +endmodule diff --git a/src/spicelib/devices/adms/mextram/adms3va/COPYRIGHT_NOTICE b/src/spicelib/devices/adms/mextram/adms3va/COPYRIGHT_NOTICE new file mode 100644 index 000000000..09d01075d --- /dev/null +++ b/src/spicelib/devices/adms/mextram/adms3va/COPYRIGHT_NOTICE @@ -0,0 +1,40 @@ +Verilog-A implementation of the Mextram Bipolar Transistor Model, +including variants of the Mextram model released by Delft University. + +Copyright (c) 2006 Delft University of Technology +Licensed under the Educational Community License version 1.0 + + +This Original Work, including software, source code, documents, or other related items, +is being provided by the copyright holder(s) subject to the terms of the Educational +Community License. By obtaining, using and/or copying this Original Work, you agree that +you have read, understand, and will comply with the following terms and conditions of +the Educational Community License: + +Permission to use, copy, modify, merge, publish, distribute, and sublicense this Original +Work and its documentation, with or without modification, for any purpose, and without fee +or royalty to the copyright holder(s) is hereby granted, provided that you include the +following on ALL copies of the Original Work or portions thereof, including modifications +or derivatives, that you make: + +The full text of the Educational Community License in a location viewable to users of the +redistributed or derivative work. + +Any pre-existing intellectual property disclaimers, notices, or terms and conditions. + +Notice of any changes or modifications to the Original Work, including the date the +changes were made. + +Any modifications of the Original Work must be distributed in such a manner as to avoid +any confusion with the Original Work of the copyright holders. + +THE SOFTWARE IS PROVIDED "AS IS", WITHOUT WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, +INCLUDING BUT NOT LIMITED TO THE WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR +PURPOSE AND NONINFRINGEMENT. IN NO EVENT SHALL THE AUTHORS OR COPYRIGHT HOLDERS BE LIABLE +FOR ANY CLAIM, DAMAGES OR OTHER LIABILITY, WHETHER IN AN ACTION OF CONTRACT, TORT OR OTHERWISE, +ARISING FROM, OUT OF OR IN CONNECTION WITH THE SOFTWARE OR THE USE OR OTHER DEALINGS IN THE SOFTWARE. + +The name and trademarks of copyright holder(s) may NOT be used in advertising or publicity +pertaining to the Original or Derivative Works without specific, written prior permission. +Title to copyright in the Original Work and any associated documentation will at all times +remain with the copyright holders. diff --git a/src/spicelib/devices/adms/mextram/adms3va/bjt504t.va b/src/spicelib/devices/adms/mextram/adms3va/bjt504t.va new file mode 100644 index 000000000..1d2920892 --- /dev/null +++ b/src/spicelib/devices/adms/mextram/adms3va/bjt504t.va @@ -0,0 +1,40 @@ +`include "frontdef.inc" +`define SELFHEATING +`define SUBSTRATE + +module bjt504tva (c, b, e, s, dt); + + // External ports + inout c, b, e, s, dt; + + (*info="external collector node"*) electrical c; + (*info="external base node"*) electrical b; + (*info="external emitter node"*) electrical e; + (*info="external substrate node"*) electrical s; + (*info="external thermal node"*) electrical dt; + + // Internal nodes + (*info="internal collector node 1"*) electrical c1; + (*info="internal emitter node"*) electrical e1; + (*info="internal base node 1"*) electrical b1; + (*info="internal base node 2"*) electrical b2; + (*info="internal collector node 2"*) electrical c2; + (*info="internal collector node 3"*) electrical c3; + (*info="internal collector node 4"*) electrical c4; + // For correlated noise implementation + (*info="internal noise node"*) electrical noi; + +`include "parameters.inc" +`include "variables.inc" +`include "opvars.inc" + +analog begin + +`include "initialize.inc" +`include "tscaling.inc" +`include "evaluate.inc" +`include "opinfo.inc" + +end // analog +endmodule + diff --git a/src/spicelib/devices/adms/mextram/adms3va/evaluate.inc b/src/spicelib/devices/adms/mextram/adms3va/evaluate.inc new file mode 100644 index 000000000..76b9184af --- /dev/null +++ b/src/spicelib/devices/adms/mextram/adms3va/evaluate.inc @@ -0,0 +1,704 @@ +// Evaluate model equations + +begin // Currents and sharges +// Nodal biases + + Vb2c1 = TYPE * V(b2, c1); + Vb2c2 = TYPE * V(b2, c2); + Vb2e1 = TYPE * V(b2, e1); + Vb1e1 = TYPE * V(b1, e1); + Vb1b2 = TYPE * V(b1, b2); +`ifdef SUBSTRATE + Vsc1 = TYPE * V(s, c1); +`endif + Vc1c2 = TYPE * V(c1, c2); + Vee1 = TYPE * V(e, e1); + Vbb1 = TYPE * V(b, b1); + Vbe = TYPE * V(b, e); + Vbc = TYPE * V(b, c); + +/* RvdT, 03-12-2007, voltage differences + associated with distributed parasitic collector. + Evaluated taking values of resistances into account: + in case of vanishing resistance corresponding node + is not addressed: */ + +if (RCBLX > 0.0) + begin + if (RCBLI > 0.0) + begin + Vc4c1 = TYPE * V(c4, c1); + Vc3c4 = TYPE * V(c3, c4); + end + else + begin + Vc4c1 = 0 ; + Vc3c4 = TYPE * V(c3, c1); + end + end +else + begin + if (RCBLI > 0.0) + begin + Vc4c1 = TYPE * V(c4, c1); + Vc3c4 = 0 ; + end + else + begin + Vc4c1 = 0 ; + Vc3c4 = 0 ; + end + end + + Vb1c4 = Vb1b2 + Vb2c2 - Vc1c2 - Vc4c1 ; + Vcc3 = - Vbc + Vbb1 + Vb1c4 - Vc3c4 ; + Vbc3 = Vbc + Vcc3 ; + +`ifdef SUBSTRATE +Vsc4 = Vsc1 - Vc4c1 ; +Vsc3 = Vsc4 - Vc3c4 ; +`endif + + +// Exponential bias terms + + `expLin(eVb2c2,Vb2c2 * VtINV) + `expLin(eVb2e1,Vb2e1 * VtINV) + `expLin(eVb1e1,Vb1e1 * VtINV) + `expLin(eVb1c4,Vb1c4 * VtINV) + `expLin(eVb1b2,Vb1b2 * VtINV) + `expLin(eVbc3,Vbc3 * VtINV) +`ifdef SUBSTRATE + `expLin(eVsc1,Vsc1 * VtINV) +`endif + + `expLin(eVbc3VDC,(Vbc3 - VDC_T) * VtINV) + `expLin(eVb1c4VDC,(Vb1c4 - VDC_T) * VtINV) + `expLin(eVb2c2VDC,(Vb2c2 - VDC_T) * VtINV) + `expLin(eVb2c1VDC,(Vb2c1 - VDC_T) * VtINV) + +// Governing equations + + // Epilayer model + + K0 = sqrt(1.0 + 4.0 * eVb2c2VDC); + Kw = sqrt(1.0 + 4.0 * eVb2c1VDC); + pW = 2.0 * eVb2c1VDC / (1.0 + Kw); + if (pW < `TEN_M40) pW = 0; + Ec = Vt * (K0 - Kw - ln((K0 + 1.0) / (Kw + 1.0)) ); + Ic1c2 = (Ec + Vc1c2) / RCV_TM + _circuit_gmin * Vc1c2; + + if (Ic1c2 > 0.0) begin + + `linLog(tmpV,Vb2c1,100.0); + Vqs_th = VDC_T + 2.0 * Vt * + ln(0.5 * Ic1c2 * RCV_TM * VtINV + 1.0) - tmpV; + eps_VDC = 0.2 * VDC_T; + `max_hyp0(Vqs, Vqs_th, eps_VDC); + Iqs = Vqs * (Vqs + IHC_M * SCRCV_M) / (SCRCV_M * (Vqs + IHC_M * RCV_TM)); + + Ic1c2_Iqs = Ic1c2 / Iqs; + `max_logexp(alpha1, Ic1c2_Iqs, 1.0, AXI); + alpha = alpha1 / (1.0 + AXI * ln(1.0 + exp(-1.0 / AXI))); + vyi = Vqs / (IHC_M * SCRCV_M); + yi = (1.0 + sqrt(1.0 + 4.0 * alpha * vyi * (1.0 + vyi))) / + (2.0 * alpha * (1.0 + vyi)); + + xi_w = 1.0 - yi / (1.0 + pW * yi); + gp0 = 0.5 * Ic1c2 * RCV_TM * xi_w * VtINV; + + gp0_help = 2.0 * gp0 + pW * (pW + gp0 + 1.0); + gp02 = 0.5 * (gp0 - 1.0); + sqr_arg = gp02 * gp02 + gp0_help; + if (gp0 >= 1.0) + p0star = gp02 + sqrt(sqr_arg); + else + p0star = gp0_help / (sqrt(sqr_arg) - gp02); + if (p0star < `TEN_M40) p0star = 0.0; + + + eVb2c2star = p0star * (p0star + 1.0) * exp(VDC_T * VtINV); + B1 = 0.5 * SCRCV_M * (Ic1c2 - IHC_M); + B2 = SCRCV_M * RCV_TM * IHC_M * Ic1c2; + Vxi0 = B1 + sqrt(B1 * B1 + B2); + Vch = VDC_T * (0.1 + 2.0 * Ic1c2 / (Ic1c2 + Iqs)); + Icap = IHC_M * Ic1c2 / (IHC_M + Ic1c2); + Icap_IHC = IHC_M / (IHC_M + Ic1c2); + + end else begin + + p0star = 2.0 * eVb2c2VDC / (1.0 + K0); + eVb2c2star = eVb2c2; + if ((abs(Vc1c2) < 1.0e-5 * Vt) || + (abs(Ec) < `TEN_M40 * Vt * (K0 + Kw))) + begin + pav = 0.5 * (p0star + pW); + xi_w = pav / (pav + 1.0); + end + + else + begin + xi_w = Ec / (Ec + Vb2c2 - Vb2c1); + end + + Vxi0 = Vc1c2; + Vch = 0.1 * VDC_T; + Icap = Ic1c2; + Icap_IHC = 1.0 - Icap / IHC_M; + + end + + // Effective emitter junction capacitance bias + + Vfe = VDE_T * (1.0 - pow(`AJE , -1.0 / PE)); + a_VDE = 0.1 * VDE_T; + `min_logexp(Vje, Vb2e1, Vfe, a_VDE); + +// RvdT, November 2008, E0BE to be re-used in EB- Zener tunnel model: + E0BE = pow(1.0 - Vje * inv_VDE_T, 1.0 - PE) ; + Vte = VDE_T / (1.0 - PE) * (1.0 - E0BE) + + `AJE * (Vb2e1 - Vje); + + // Effective collector junction capacitance bias + + Vjunc = Vb2c1 + Vxi0; + bjc = (`AJC - XP_T) / (1.0 - XP_T); + Vfc = VDC_T * (1.0 - pow(bjc, -1.0 / PC)); + `min_logexp(Vjc, Vjunc, Vfc, Vch); + fI = pow(Icap_IHC, MC); + Vcv = VDC_T / (1.0 - PC) * (1.0 - fI * pow(1.0 - Vjc / VDC_T, 1.0 - PC)) + + fI * bjc * (Vjunc - Vjc); + Vtc = (1.0 - XP_T) * Vcv + XP_T * Vb2c1; + + // Transfer current + + If0 = 4.0 * IS_TM / IK_TM; + f1 = If0 * eVb2e1; + n0 = f1 / (1.0 + sqrt(1.0 + f1)); + f2 = If0 * eVb2c2star; + nB = f2 / (1.0 + sqrt(1.0 + f2)); + + if (DEG == 0.0) + q0I = 1.0 + Vte / VER_T + Vtc / VEF_T; + else + begin + termE = (Vte / VER_T + 1.0) * DEG_T * VtINV; + termC = -Vtc / VEF_T * DEG_T * VtINV; + q0I = (exp(termE) - exp(termC)) / + (exp(DEG_T * VtINV) - 1.0); + end + + `max_hyp0(q1I, q0I, 0.1); + qBI = q1I * (1.0 + 0.5 * (n0 + nB)); + + Ir = IS_TM * eVb2c2star; + If = IS_TM * eVb2e1; + In = (If - Ir) / qBI; + + // Base and substrate current(s) + + Ibf0 = IS_TM / BF_T; + if (XREC == 0.0) + Ib1 = (1.0 - XIBI) * Ibf0 * (eVb2e1 - 1.0); + else + Ib1 = (1.0 - XIBI) * Ibf0 * ((1.0 - XREC) * (eVb2e1 - 1.0) + + XREC * (eVb2e1 + eVb2c2star - 2.0) * (1.0 + Vtc / VEF_T)); + + Ib1_s = XIBI * Ibf0 * (eVb1e1 - 1.0); + `expLin(tmpExp,Vb2e1 * VtINV / MLF) + Ib2 = IBF_TM * (tmpExp - 1.0) + _circuit_gmin * Vb2e1; + `expLin(tmpExp,0.5 * Vb1c4 * VtINV) + Ib3 = IBR_TM * (eVb1c4 - 1.0) / + (tmpExp + exp(0.5 * VLR * VtINV)) + + _circuit_gmin * Vb1c4; + +// begin RvdT, November 2008, MXT504.8_alpha + +// Base-emitter tunneling current +// max E-field E0BE calculated in BE depletion charge model: + + if (IZEB > 0.0 && NZEB > 0.0 && Vb2e1 < 0) + begin + + `expLin(eZEB, nZEB_T * (1 - (pow2_2mPE/(2.0*E0BE)))) +// Force all derivatives at Vb2e1=0 to zero by using in DZEB a +// modified dE0BE expression for E0BE: + x = Vb2e1 * inv_VDE_T ; + dE0BE = pow(- x, -2.0-PE)*(PE*(1-PE*PE-3*x*(PE-1))-6*x*x*(PE-1+x)) * `one_sixth ; + `expLin(edZEB, Vb2e1 * pow2_2mPE * nZEB_T / (VGZEB_T * dE0BE )) + DZEB = - Vb2e1 - VGZEB_T * dE0BE * (1 - edZEB) / (pow2_2mPE * nZEB_T) ; + Izteb = 2.0 * IZEB_TM * DZEB * E0BE * eZEB * inv_VDE_T * pow2_PEm2 ; + end + else + begin + DZEB = 0 ; + Izteb = 0 ; + end + +// end RvdT, November 2008, MXT504.8_alpha + + // Iex, Isub (XIex, XIsub) + + g1 = If0 * eVb1c4; + g2 = 4.0 * eVb1c4VDC; + nBex = g1 / (1.0 + sqrt(1.0 + g1)); + pWex = g2 / (1.0 + sqrt(1.0 + g2)); + Iex = (1.0 / BRI_T) * (0.5 * IK_TM * nBex - IS_TM); + +`ifdef SUBSTRATE + Isub = 2.0 * ISS_TM * (eVb1c4 - 1.0) / + (1.0 + sqrt(1.0 + 4.0 * (IS_TM / IKS_TM) * eVb1c4)); +// until504.8: Isf = ISS_TM * (eVsc1 - 1.0); +// New 504.9: + +if (ICSS < 0.0) +// this clause is to implement backwards compatibility + begin + Isf = ISS_TM * (eVsc1 - 1.0); + end + else + begin + Isf = ICSS_TM * (eVsc1 - 1.0); + end + +// End: New 504.9. + +`endif + + XIex =0.0; + +`ifdef SUBSTRATE + XIsub = 0.0; +`endif + + if (EXMOD == 1) + begin + + Iex = Iex * Xext1; + +`ifdef SUBSTRATE + Isub = Isub * Xext1; +`endif + + Xg1 = If0 * eVbc3; + XnBex = Xg1 / (1.0 + sqrt(1.0 + Xg1)); + XIMex = XEXT * (0.5 * IK_TM * XnBex - IS_TM) / BRI_T; + +`ifdef SUBSTRATE + XIMsub = XEXT * 2.0 * ISS_TM * (eVbc3 - 1.0) / + (1.0 + sqrt(1.0 + 4.0 * IS_T / IKS_T * eVbc3)); + Vex_bias = XEXT * (IS_TM / BRI_T + ISS_TM) * RCCxx_TM; +`else + XIMsub = 0.0; + Vex_bias = XEXT * (IS_TM / BRI_T) * RCCxx_TM; +`endif + + Vex = Vt * (2.0 - ln( Vex_bias * VtINV)); + vdif = Vbc3 - Vex; + `max_hyp0(VBex, vdif, 0.11); + + Fex = VBex /(Vex_bias + (XIMex + XIMsub) * RCCxx_TM + VBex); + XIex = Fex * XIMex; + +`ifdef SUBSTRATE + XIsub = Fex * XIMsub; +`endif + end + else + begin + Fex = 0; + XnBex = 0 ; + end + + // Variable base resistance + + q0Q = 1.0 + Vte / VER_T + Vtc / VEF_T; + `max_hyp0(q1Q, q0Q, 0.1); + qBQ = q1Q * (1.0 + 0.5 * (n0 + nB)); + + Rb2 = 3.0 * RBV_TM / qBQ; + Ib1b2 = (2.0 * Vt * (eVb1b2 - 1.0) + Vb1b2) / Rb2 + _circuit_gmin * Vb1b2; + + // Weak-avalanche current + + Iavl = 0.0; + Gem = 0.0; + if ((Ic1c2 > 0.0) && (Vb2c1 < VDC_T)) begin + + dEdx0 = 2.0 * VAVL / (WAVL * WAVL); + sqr_arg = (VDC_T - Vb2c1) / Icap_IHC; + xd = sqrt(2.0 * sqr_arg / dEdx0); + if (EXAVL == 0.0) + Weff = WAVL; + else + begin + xi_w1 = 1.0 - 0.5 * xi_w; + Weff = WAVL * xi_w1 * xi_w1; + end + Wd = xd * Weff / sqrt(xd * xd + Weff * Weff); + Eav = (VDC_T - Vb2c1) / Wd; + E0 = Eav + 0.5 * Wd * dEdx0 * Icap_IHC; + + if (EXAVL == 0) + Em = E0; + else + begin + SHw = 1.0 + 2.0 * SFH * (1.0 + 2.0 * xi_w); + Efi = (1.0 + SFH) / (1.0 + 2.0 * SFH); + Ew = Eav - 0.5 * Wd * dEdx0 * (Efi - Ic1c2 / (IHC_M * SHw)); + sqr_arg = (Ew - E0) * (Ew - E0) + 0.1 * Eav * Eav * Icap / IHC_M; + Em = 0.5 * (Ew + E0 + sqrt(sqr_arg)); + end + + EmEav_Em = (Em - Eav) / Em; + if (abs(EmEav_Em) > `TEN_M07) + begin + lambda = 0.5 * Wd / EmEav_Em; + Gem = An / BnT * Em * lambda * + (exp(-BnT / Em) - exp(-BnT / Em * (1.0 + Weff / lambda)) ); + end + else + Gem = An * Weff * exp(-BnT / Em); + + Gmax = Vt / (Ic1c2 * (RBC_TM + Rb2)) + qBI / BF_T + + RE_TM / (RBC_TM + Rb2); + Iavl = Ic1c2 * Gem / (Gem +Gem / Gmax + 1.0); + end + + if (eVb2c2star > 0.0) + Vb2c2star = Vt * ln(eVb2c2star); + else + Vb2c2star = Vb2c2; + +`ifdef SELFHEATING + // Power dissipation + +// RvdT 03-12-2007, modified power equation due to distribution collector resistance + + power = In * (Vb2e1 - Vb2c2star) + + Ic1c2 * (Vb2c2star - Vb2c1) - + Iavl * Vb2c2star + + Vee1 * Vee1 / RE_TM + + Vcc3 * Vcc3 * GCCxx_TM + + Vc3c4 * Vc3c4 * GCCex_TM + + Vc4c1 * Vc4c1 * GCCin_TM + + Vbb1 * Vbb1 / RBC_TM + + Ib1b2 * Vb1b2 + +// 504.8: Nov. 2008, RvdT, TU_Delft: Zener current contribution added: +// Izteb > 0 for Vb2e1 < 0, hence the minus sign: + (Ib1 + Ib2 - Izteb) * Vb2e1 + + Ib1_s * Vb1e1 + +`ifdef SUBSTRATE + (Iex + Ib3) * Vb1c4 + XIex * Vbc3 + + Isub * (Vb1c4 - Vsc4) + + XIsub * (Vbc3 - Vsc3) + + Isf * Vsc1; +`else + (Iex + Ib3) * Vb1c4 + XIex * Vbc3; +`endif + +`endif + + + // Charges + + Qte = (1.0 - XCJE) * CJE_TM * Vte; + `min_logexp(Vje_s, Vb1e1, Vfe, a_VDE); + Qte_s = XCJE * CJE_TM * (VDE_T / (1.0 - PE) * + (1.0 - pow(1.0 - Vje_s * inv_VDE_T, 1.0 - PE)) + + `AJE * (Vb1e1 - Vje_s)); + + Qtc = XCJC * CJC_TM * Vtc; + Qb0 = TAUB_T * IK_TM; + Qbe_qs = 0.5 * Qb0 * n0 * q1Q; + Qbc_qs = 0.5 * Qb0 * nB * q1Q; + + a_VDC = 0.1 * VDC_T; + `min_logexp(Vjcex, Vb1c4, Vfc, a_VDC); + Vtexv = VDC_T / (1.0 - PC) * (1.0 - pow(1.0 - Vjcex / VDC_T, 1.0 - PC)) + + bjc * (Vb1c4 - Vjcex); + Qtex = CJC_TM * ((1.0 - XP_T) * Vtexv + XP_T * Vb1c4) * + (1.0 - XCJC) * (1.0 - XEXT); + + `min_logexp(XVjcex, Vbc3, Vfc, a_VDC); + XVtexv = VDC_T / (1.0 - PC) * (1.0 - pow(1.0 - XVjcex / VDC_T, 1.0 - PC)) + + bjc * (Vbc3 - XVjcex); + XQtex = CJC_TM * ((1.0 - XP_T) * XVtexv + XP_T * Vbc3) * + (1.0 - XCJC) * XEXT; + +`ifdef SUBSTRATE + a_VDS = 0.1 * VDS_T; + Vfs = VDS_T * (1.0 - pow(`AJS , -1.0 / PS)); + `min_logexp(Vjs, Vsc1, Vfs, a_VDS); + Qts = CJS_TM * (VDS_T / (1.0 - PS) * + (1.0 - pow(1.0 - Vjs / VDS_T, 1.0 - PS)) + `AJS * (Vsc1 - Vjs)); +`endif + + Qe0 = TAUE_T * IK_TM * pow(IS_TM / IK_TM, 1.0 / MTAU); + `expLin(tmpExp,Vb2e1 / (MTAU * Vt)) + Qe = Qe0 * (tmpExp - 1.0); + + Qepi0 = 4.0 * TEPI_T * Vt / RCV_TM; + Qepi = 0.5 * Qepi0 * xi_w * (p0star + pW + 2.0); + + Qex = TAUR_T * 0.5 * (Qb0 * nBex + Qepi0 * pWex) / (TAUB_T + TEPI_T); + XQex = 0.0; + + if (EXMOD == 1) begin + + Qex = Qex * (1.0 - XEXT); + Xg2 = 4.0 * eVbc3VDC; + XpWex = Xg2 / (1.0 + sqrt(1.0 + Xg2)); + XQex = 0.5 * Fex * XEXT * TAUR_T * + (Qb0 * XnBex + Qepi0 * XpWex) / (TAUB_T + TEPI_T); + + end + + Qb1b2 = 0.0; + if (EXPHI == 1) + begin + dVteVje = pow(1.0 - Vje * inv_VDE_T, -PE) - `AJE; + Vb2e1Vfe = (Vb2e1 - Vfe) / a_VDE; + if (Vb2e1Vfe < 0.0) + dVjeVb2e1 = 1.0 / (1.0 + exp(Vb2e1Vfe)); + else + dVjeVb2e1 = exp(- Vb2e1Vfe) / (1.0 + exp(- Vb2e1Vfe)); + + dVteVb2e1 = dVteVje * dVjeVb2e1 + `AJE; + dQteVb2e1 = (1.0 - XCJE) * CJE_TM * dVteVb2e1; + + dn0Vb2e1 = If0 * eVb2e1 * VtINV * (0.5 / sqrt(1.0 + f1)); + dQbeVb2e1 = 0.5 * Qb0 * q1Q * dn0Vb2e1; + + dQeVb2e1 = (Qe + Qe0) / (MTAU * Vt); + + Qb1b2 = 0.2 * Vb1b2 * (dQteVb2e1 + dQbeVb2e1 + dQeVb2e1); + + Qbc = Qbe_qs * `one_third + Qbc_qs; + Qbe = 2.0 * Qbe_qs * `one_third ; + end + else + begin + Qbe = Qbe_qs; + Qbc = Qbc_qs; + end + + +// Add branch current contributions + + // Static currents + I(c1, c2) <+ TYPE * Ic1c2; + I(c2, e1) <+ TYPE * In; + I(b1, e1) <+ TYPE * Ib1_s; +// begin RvdT, 28-10-2008, MXT504.8_alpha +// contribution tunnel current added + I(b2, e1) <+ TYPE * (Ib1 + Ib2 - Izteb); + +`ifdef SUBSTRATE + I(b1, s) <+ TYPE * Isub; + I(b, s) <+ TYPE * XIsub; + I(s, c1) <+ TYPE * Isf; +`endif + I(b1, b2) <+ TYPE * Ib1b2; + I(b2, c2) <+ TYPE * (-1.0 * Iavl); + I(e, e1) <+ TYPE * Vee1 / RE_TM; + I(b, b1) <+ TYPE * Vbb1 / RBC_TM; + +`ifdef SELFHEATING + // Electrical equivalent for the thermal network + I(dt) <+ V(dt) / RTH_Tamb_M; + I(dt) <+ ddt(CTH_M * V(dt)); + I(dt) <+ -1.0 * power; +`endif + + // Electrical equivalent for the correlated noise + I(noi, e1) <+ V(noi, e1); + cor_exp_1 = sqrt(1.0 + 2.0 * Gem) * V(noi,e1); + I(b2, e1) <+ cor_exp_1; + cor_exp_2 = (2.0 + 2.0 * Gem) / sqrt(1.0 + 2.0 * Gem) * V(noi, e1); + I(e1, c2) <+ cor_exp_2; + + // Dynamic currents + I(b2, e1) <+ ddt(TYPE * (Qte + Qbe + Qe)); + I(b1, e1) <+ ddt(TYPE * (Qte_s)); + I(b2, c2) <+ ddt(TYPE * (Qtc + Qbc + Qepi)); +`ifdef SUBSTRATE + I(s, c1) <+ ddt(TYPE * Qts); +`endif + I(b1, b2) <+ ddt(TYPE * Qb1b2); + I(b, e) <+ ddt(TYPE * CBEO_M * Vbe); + I(b, c) <+ ddt(TYPE * CBCO_M * Vbc); + + end // Currents and charges + + +/* RvdT, Delft Univ. Tech. 03-12-2007. +Distribution of parasitic collector resistance. +This construct supports the case +RCBLI = 0.0 and or RCBLX = 0.0 . +It is up to the compiler to adjust the circuit topology +and perform a node-collapse in such cases. */ +if (RCBLX > 0.0) + begin + I(b, c3) <+ TYPE * XIex; + I(c, c3) <+ TYPE * Vcc3 * GCCxx_TM ; + I(b, c3) <+ ddt(TYPE * (XQtex + XQex)); + if (RCBLI > 0.0) + begin + I(c4, c1) <+ TYPE * Vc4c1 * GCCin_TM; + I(b1, c4) <+ TYPE * (Ib3 + Iex); + I(c3, c4) <+ TYPE * Vc3c4 * GCCex_TM ; + I(b1, c4) <+ ddt(TYPE * (Qtex + Qex)); + end + else + begin + V(c4, c1) <+ 0.0 ; + I(b1, c1) <+ TYPE * (Ib3 + Iex); + I(b1, c1) <+ ddt(TYPE * (Qtex + Qex)); + I(c3, c1) <+ TYPE * Vc3c4 * GCCex_TM ; + end + end +else + begin + V(c3, c4) <+ 0 ; + if (RCBLI > 0.0) + begin + I(b, c4) <+ TYPE * XIex; + I(c, c4) <+ TYPE * Vcc3 * GCCxx_TM ; + I(c4, c1) <+ TYPE * Vc4c1 * GCCin_TM; + I(b1, c4) <+ TYPE * (Ib3 + Iex); + I(b1, c4) <+ ddt(TYPE * (Qtex + Qex)); + I(b, c4) <+ ddt(TYPE * (XQtex + XQex)); + end + else + begin + I(b, c1) <+ TYPE * XIex; + I(c, c1) <+ TYPE * Vcc3 * GCCxx_TM ; + V(c4, c1) <+ 0.0 ; + I(b1, c1) <+ TYPE * (Ib3 + Iex); + I(b1, c1) <+ ddt(TYPE * (Qtex + Qex)); + I(b, c1) <+ ddt(TYPE * (XQtex + XQex)); + I(c3, c1) <+ TYPE * Vc3c4 * GCCex_TM ; + end + end + +// Noise sources + +`NOISE begin + + // Thermal noise + common = 4.0 * `KB * Tk; + powerREC = common / RE_TM; // Emitter resistance + powerRBC = common / RBC_TM; // Base resistance + // RvdT, 03-12-2007: distributed collector resistance + powerRCCxx = common * GCCxx_TM; // Collector resistance + powerRCCex = common * GCCex_TM; // Collector resistance + powerRCCin = common * GCCin_TM; // Collector resistance + powerRBV = common / Rb2 * (4.0 * eVb1b2 + 5.0) * `one_third ; // Variable base resistance + + // Collector current shot noise + powerCCS = 2.0 * `QQ * (If + Ir) / qBI; + + // Forward base current shot noise and 1/f noise +// 504.8, Nov. 2008, RvdT, TU-Delft: added Zener current to shot noise + powerFBCS = 2.0 * `QQ * (abs(Ib1) + abs(Ib2) + abs(Izteb)); + powerFBC1fB1 = (1.0 - XIBI) * pow((abs(Ib1) / (1 - XIBI)), AF) * KF_M; + exponentFBC1fB2 = (2.0 * (MLF - 1.0)) + (AF * (2.0 - MLF)); + powerFBC1fB2 = KFN_M * pow(abs(Ib2), exponentFBC1fB2); + + // Emitter-base sidewall current shot and 1/f noise + powerEBSCS = 2.0 * `QQ * abs(Ib1_s); + if (XIBI == 0) + powerEBSC1f = 0.0; + else + powerEBSC1f = KF_M * XIBI * pow((abs(Ib1_s / XIBI)), AF); + + // Reverse base current shot noise and 1/f noise + powerRBCS = 2.0 * `QQ * abs(Ib3); + powerRBC1f = KF_M * pow(abs(Ib3), AF); + + // Extrinsic current shot noise and 1/f noise + powerExCS = 2.0 * `QQ * abs(Iex); + powerExC1f = KF_M * (1 - (EXMOD * XEXT)) * + pow((abs(Iex) / (1 - (EXMOD * XEXT))), AF); + powerExCSMOD = 2.0 * `QQ * abs(XIex) * EXMOD; + if (XEXT == 0.0) + powerExC1fMOD = 0.0; + else + powerExC1fMOD = KF_M * EXMOD * XEXT * pow((abs(XIex) / XEXT), AF); + +`ifdef SUBSTRATE + // Substrate current shot noise (between nodes B1 and S, resp. B and S) + powerSubsCS_B1S = 2.0 * `QQ * abs(Isub); + powerSubsCS_BS = 2.0 * `QQ * abs(XIsub); +`endif + + + // Noise due to the avalanche + // twoqIavl = KAVL * 2.0 * `QQ * Iavl; + twoqIavl = KAVL*Gem*powerCCS; + powerCCS_A = powerCCS + twoqIavl * (3.0 + 2.0 * Gem + - (2.0 + 2.0 * Gem)*(2.0 + 2.0 * Gem)/(1.0 + 2.0 * Gem) ); + + // Add noise sources + I(e, e1) <+ white_noise(powerREC); // "emitter resistance" + I(b, b1) <+ white_noise(powerRBC); // "base resistance" + + I(b1, b2) <+ white_noise(powerRBV); // "variable baseresistance" + + I(noi, e1) <+ white_noise(twoqIavl); // "avalanche" + I(c2, e1) <+ white_noise(powerCCS_A); // "col_emi_shot" + I(b2, e1) <+ white_noise(powerFBCS); // "bas_emi_forw" + + I(b2, e1) <+ flicker_noise(powerFBC1fB1, 1); // "bas_emi_forw" + I(b2, e1) <+ flicker_noise(powerFBC1fB2, 1); // "bas_emi_forw" + I(e1, b1) <+ white_noise(powerEBSCS); // "emi_bas_side" + I(e1, b1) <+ flicker_noise(powerEBSC1f, 1); // "emi_bas_side" + I(b1, c4) <+ white_noise(powerRBCS); // "bas_col_reve" + I(b1, c4) <+ flicker_noise(powerRBC1f, 1); // "bas_col_reve" + I(b1, c4) <+ white_noise(powerExCS); // "Ext_bas_col" + I(b1, c4) <+ flicker_noise(powerExC1f, 1); // "Ext_bas_col" + I(b, c3) <+ white_noise(powerExCSMOD); // "Ext_bas_col" + I(b, c3) <+ flicker_noise(powerExC1fMOD, 1); // "Ext_bas_col" +`ifdef SUBSTRATE + I(b1, s) <+ white_noise(powerSubsCS_B1S); // "bas_sub_current" + I(b, s) <+ white_noise(powerSubsCS_BS); // "bas_sub_current" +`endif + +/* RvdT, Delft University of Technology 03-12-2007, +Noise voltage associated with distributed parasitic collector. +In case of vanishing resistance corresponding node +is not addressed: */ + + // RvdT, 31-01-2007: distributed collector resistance + +if (RCBLX > 0.0) + begin + if (RCBLI > 0.0) + begin /* all branches exist */ + I(c, c3) <+ white_noise(powerRCCxx); // "collector plug resistance" + I(c3, c4) <+ white_noise(powerRCCex); // "extrinsic collector BL resistance" + I(c4, c1) <+ white_noise(powerRCCin); // "intrinsic collector BL resistance" + end + else + begin /* only Rcblx exists */ + I(c, c3) <+ white_noise(powerRCCxx); // "collector plug resistance" + I(c3, c1) <+ white_noise(powerRCCex); // "extrinsic collector BL resistance" + end + end +else + begin + if (RCBLI > 0.0) + begin /* only Rcbli exists */ + I(c, c4) <+ white_noise(powerRCCxx); // "collector plug resistance" + I(c4, c1) <+ white_noise(powerRCCin); // "intrinsic collector BL resistance" + end + else + begin /* neither Rcblx nor Rcbli exists */ + I(c, c1) <+ white_noise(powerRCCxx); // "collector plug resistance" + end + end + + +end // Noise sources + diff --git a/src/spicelib/devices/adms/mextram/adms3va/frontdef.inc b/src/spicelib/devices/adms/mextram/adms3va/frontdef.inc new file mode 100644 index 000000000..23e418c11 --- /dev/null +++ b/src/spicelib/devices/adms/mextram/adms3va/frontdef.inc @@ -0,0 +1,84 @@ +// Front definitions + +`include "discipline.h" + +// Numerical, physical and model constants +`define TEN_M40 1.0e-40 +`define TEN_M07 1.0e-7 +`define C2K 273.15 +`define KB 1.3806226e-23 +`define QQ 1.6021918e-19 +`define KBdivQQ 8.61708691805812512584e-5 +`define one_third 0.33333333333333333333 +`define one_sixth 0.16666666666666666667 +`define VDLOW 0.05 +`define AJE 3.0 +`define AJC 2.0 +`define AJS 2.0 +`define VEXLIM 200.0 +`define PI 3.1415926 + +// Desriptions and units +`ifdef __VAMS_COMPACT_MODELING__ + `define OPP(nam,uni,des) (* desc="des", units="uni" *) real nam; + `define PAR(des,uni) (* desc="des", units="uni" *) parameter real + `define PAI(des,uni) (* desc="des", units="uni" *) parameter integer +`else + `define OPP(nam,uni,des) + `define PAR(des,uni) parameter real + `define PAI(des,uni) parameter integer +`endif + +// ADMS specific definitions +`ifdef insideADMS + `define MODEL @(initial_model) + `define INSTANCE @(initial_instance) + `define NOISE @(noise) + `define ATTR(txt) (*txt*) +`else + `define MODEL + `define INSTANCE + `define NOISE + `define ATTR(txt) +`endif + +// Smooth limitting functions +`define max_hyp0(result, x, epsilon)\ + eps2 = epsilon * epsilon;\ + x2 = x * x;\ + if (x < 0.0)\ + result = 0.5 * eps2 / (sqrt(x2 + eps2) - x);\ + else\ + result = 0.5 * (sqrt(x2 + eps2) + x);\ + result=result + +`define min_logexp(result, x, x0, a)\ + dxa = (x - x0) / (a);\ + if (x < x0)\ + result = x - a * ln(1.0 + exp(dxa));\ + else\ + result = x0 - a * ln(1.0 + exp(-dxa));\ + result=result + +`define max_logexp(result, x, x0, a)\ + dxa = (x - x0) / (a);\ + if (x < x0)\ + result = x0 + a * ln(1.0 + exp(dxa));\ + else\ + result = x + a * ln(1.0 + exp(-dxa));\ + result=result + +`define expLin(result, x)\ + if (x < `VEXLIM)\ + result = exp(x);\ + else begin\ + expl = exp(`VEXLIM);\ + result = expl * (1.0 + (x - `VEXLIM));\ + end + +`define linLog(result, x, vlim)\ + if (x < vlim)\ + result = x;\ + else\ + result = vlim + ln(1.0 + (x - vlim));\ + result=result diff --git a/src/spicelib/devices/adms/mextram/adms3va/initialize.inc b/src/spicelib/devices/adms/mextram/adms3va/initialize.inc new file mode 100644 index 000000000..1b80c2949 --- /dev/null +++ b/src/spicelib/devices/adms/mextram/adms3va/initialize.inc @@ -0,0 +1,74 @@ +// Initialze model constants + + // Impact ionization constants (NPN - PNP) + +if (TYPE == 1) begin + + An = 7.03e7; + Bn = 1.23e8; + +end else begin + + An = 1.58e8; + Bn = 2.04e8; + +end + +Xext1 = 1.0 - XEXT; + + // Temperature independent MULT scaling + +`ifdef SELFHEATING + CTH_M = CTH * MULT; +`endif + + CBEO_M = CBEO * MULT; + CBCO_M = CBCO * MULT; + + invMULT = 1.0 / MULT; + SCRCV_M = SCRCV * invMULT; + + KF_M = KF * pow(MULT, 1.0 - AF); + KFN_M = KFN * pow(MULT, 1.0 - (2.0 * (MLF - 1.0) + AF * (2.0 - MLF))); + +// begin: RvdT, November 2008 ; Zener tunneling current model + + pow2_2mPE = pow(2.0, 2.0 - PE); + pow2_PEm2 = 1.0 / pow2_2mPE; + +// Reference Temperature expressed in Kelvin: + Trk = TREF + `C2K; + +// begin: RvdT, November 2008 ; Zener tunneling current model +// +// Comment added March 2009: this assumes VGZEBOK as a model parameter. +// +// Bandgap for Zener tunnel current model at reference temperature in eV: +// VGZEB_Tr = VGZEBOK - AVGEB*Trk*Trk / (Trk + TVGEB) ; +// `max_logexp(VGZEB_Tr, VGZEBOK - AVGEB*Trk*Trk / (Trk + TVGEB), 0.05, 0.1) ; +// end: RvdT, November 2008 + +// begin: RvdT March 2009: +// to decrease parameter interdependency, +// use VGZEB as a parameter, instead of VGZEBOK: +// VGZEB : bandgap for Zener tunneling at T = Tref, +// VGZEBOK : bandgap for Zener tunneling at T = 0 K. +// `max_logexp(VGZEBOK, VGZEB + AVGEB*Trk*Trk / (Trk + TVGEB), 0.05, 0.1); +//dw can't expand the macro `max_logexp here - using the code + _x = VGZEB + AVGEB*Trk*Trk / (Trk + TVGEB); + _x0 = 0.05; + _a = 0.1; + _dxa = (_x - _x0) / (_a); + if (_x < _x0) + VGZEBOK = _x0 + _a * ln(1.0 + exp(_dxa)); + else + VGZEBOK = _x + _a * ln(1.0 + exp(-_dxa)); + + VGZEB_Tr = VGZEB; +// end: RvdT March 2009: use VGZEB as a parameter, instead of VGZEBOK: + + inv_VGZEB_Tr = 1.0 / VGZEB_Tr; + + inv_VDE = 1.0 / VDE; + +// end: RvdT, November 2008 ; Zener tunneling current model diff --git a/src/spicelib/devices/adms/mextram/adms3va/opinfo.inc b/src/spicelib/devices/adms/mextram/adms3va/opinfo.inc new file mode 100644 index 000000000..6b93b6b0a --- /dev/null +++ b/src/spicelib/devices/adms/mextram/adms3va/opinfo.inc @@ -0,0 +1,231 @@ +// Evaluate the operating point (outout) variables +begin + +`ifdef __VAMS_COMPACT_MODELING__ + +// The external currents and the current gain +OP_ic = I(); // External DC collector current +OP_ib = I(); // External DC base Current +OP_betadc = OP_ic / OP_ib; // External DC Current gain + +// begin added in MXT 504.9: +OP_ie = I(); // External DC emitter current +OP_vbe = V(b, e); // External base-emitter bias +OP_vce = V(c, e); // External collector-emitter bias +OP_vbc = V(b, c); // External base-collector bias + +`ifdef SUBSTRATE +OP_is = I(); // External DC emitter current +OP_vse = V(s, e); // External substrate-emitter bias +OP_vbs = V(b, s); // External base-substrate bias +OP_vsc = V(s, c); // External substrate-collector bias +`endif + +// end added in MXT 504.9: + +// The internal voltage differences +OP_vb2e1 = Vb2e1; // Internal base-emiter bias +OP_vb2c2 = Vb2c2; // Internal base-emiter bias +OP_vb2c1 = Vb2c1; // Internal base-collector bias including epilayer + +OP_vb1c1 = Vb1b2 + Vb2c1; // External base-collector bias without contact resistances + +OP_vc4c1 = Vc4c1; // Bias over intrinsic buried layer +OP_vc3c4 = Vc3c4; // Bias over extrinsic buried layer + +OP_ve1e = - Vee1; // Bias over emiter resistance + +// The branch currents +OP_in = In; // Main current +OP_ic1c2 = Ic1c2; // Epilayer current +OP_ib1b2 = Ib1b2; // Pinched-base current +OP_ib1 = Ib1; // Ideal forward base current +OP_sib1 = Ib1_s; // Ideal side-wall base current +// +// 504.8, RvdT, TU-Delft April. 2009: +// +OP_izteb = Izteb ; // Zener tunneling current +// +OP_ib2 = Ib2; // Non-ideal forward base current +OP_ib3 = Ib3; // Non-ideal reverse base current +OP_iavl = Iavl; // Avalanche current +OP_iex = Iex; // Extrinsic reverse base current +OP_xiex = XIex; // Extrinsic reverse base current +`ifdef SUBSTRATE +OP_isub = Isub; // Substrate current +OP_xisub = XIsub; // Substrate current +OP_isf = Isf; // Substrate-collector current +`endif +OP_ire = - Vee1 / RE_TM; // Current through emiter resistance +OP_irbc = Vbb1 / RBC_TM; // Current through constant base resistance + +OP_ircc = Vcc3 * GCCxx_TM; // Current through collector contact resistance +OP_ircblx = Vc3c4 * GCCex_TM; // Current through extrinsic buried layer resistance +OP_ircbli = Vc4c1 * GCCin_TM; // Current through extrinsic buried layer resistance + +// The branch charges +OP_qe = Qe; // Emitter charge or emitter neutral charge +OP_qte = Qte; // Base-emiter depletion charge +OP_sqte = Qte_s; // Sidewall base-emiter depletion charge +OP_qbe = Qbe; // Base-emiter diffusion charge +OP_qbc = Qbc; // Base-collector diffusion charge +OP_qtc = Qtc; // Base-colector depletion charge +OP_qepi = Qepi; // Epilayer diffusion charge +OP_qb1b2 = Qb1b2; // AC current crowding charge +OP_qtex = Qtex; // Extrinsic base-collector depletion charge +OP_xqtex = XQtex; // Extrinsic base-collector depletion charge +OP_qex = Qex; // Extrinsic base-collector diffusion charge +OP_xqex = XQex; // Extrinsic base-collector diffusion charge +`ifdef SUBSTRATE +OP_qts = Qts; // Collector substrate depletion charge +`endif + +// Small signal equivalent circuit conductances and resistances + +OP_gx = - ddx(In, V(e1)); // Forward transconductance +OP_gy = - ddx(In, V(c2)); // Reverse transconductance + +OP_gz = - ddx(In, V(c1)); // Reverse transconductance + +OP_sgpi = - ddx(Ib1_s, V(e)) + - ddx(Ib1_s, V(e1)); // Conductance sidewal b-e junction +OP_gpix = - ddx(Ib1+Ib2, V(e1)); // Conductance floor b-e junction + +OP_gpiy = - ddx(Ib1, V(c2)); // Early effect on recombination base current +OP_gpiz = - ddx(Ib1, V(c1)); // Early effect on recombination base current + +OP_gmux = ddx( Iavl, V(e1)); // Early effect on avalanche current limitting +OP_gmuy = ddx( Iavl, V(c2)); // Conductance of avalanche current +OP_gmuz = - ddx(- Iavl, V(c1)); // Conductance of avalanche current + +// Conductance extrinsic b-c current : +OP_gmuex = ddx(Iex+Ib3, V(e)) + + ddx(Iex+Ib3, V(b1)) + + ddx(Iex+Ib3, V(b2)) + + ddx(Iex+Ib3, V(e1)) + + ddx(Iex+Ib3, V(c2)); + +OP_xgmuex = ddx(XIex, V(b)) ; // Conductance extrinsic b-c current + +OP_grcvy = - ddx(Ic1c2, V(c2)); // Conductance of epilayer current +OP_grcvz = - ddx(Ic1c2, V(c1)); // Conductance of epilayer current + +OP_rbv = 1.0 / (- ddx(Ib1b2, V(b2)) - ddx(Ib1b2, V(c2))); // Base resistance + +OP_grbvx = - ddx(Ib1b2, V(e)) - ddx(Ib1b2, V(e1)); // Early effect on base resistance +OP_grbvy = - ddx(Ib1b2, V(c2)); // Early effect on base resistance + +OP_grbvz = - ddx(Ib1b2, V(c1)); // Early effect on base resistance + +OP_re = RE_TM; // Emiter resistance +OP_rbc = RBC_TM; // Constant base resistance +OP_rcc = RCCxx_TM; // Collector Contact resistance +OP_rcblx = RCCex_TM; // Extrinsic buried layer resistance +OP_rcbli = RCCin_TM; // Extrinsic buried layer resistance + + +`ifdef SUBSTRATE +OP_gs = ddx(Isub, V(b)) + ddx(Isub, V(b1)); // Conductance parasitic PNP transitor +OP_xgs = ddx(XIsub, V(b)) ; // Conductance parasitic PNP transistor +OP_gsf = ddx(Isf, V(s)) ; // Conductance substrate-collector current +`endif + + + +// Small signal equivalent circuit capacitances +OP_scbe = - ddx(Qte_s, V(e)) - ddx(Qte_s, V(e1)); // Capacitance sidewall b-e junction + +OP_cbex = - ddx(Qte + Qbe + Qe, V(e1)) ; // Capacitance floor b-e junction + +OP_cbey = - ddx(Qbe, V(c2)); // Early effect on b-e diffusion junction + +OP_cbez = - ddx(Qbe, V(c1)); // Early effect on b-e diffusion junction + +OP_cbcx = - ddx(Qbc, V(e)) - ddx(Qbc, V(e1)); // Early effect on b-c diffusion junction + + +OP_cbcy = - ddx(Qtc + Qbc + Qepi, V(c2)); // Capacitance floor b-c junction +OP_cbcz = - ddx(Qtc + Qbc + Qepi, V(c1)); // Capacitance floor b-c junction + +// Capacitance extrinsic b-c junction : +OP_cbcex = ddx(Qtex + Qex,V(e)) + + ddx(Qtex + Qex,V(b1 )) + + ddx(Qtex + Qex,V(b2)) + + ddx(Qtex + Qex,V(e1)) + + ddx(Qtex + Qex,V(c2)) ; + +// Capacitance extrinsic b-c junction : +OP_xcbcex = ddx(XQtex + XQex, V(b)) ; + +OP_cb1b2 = - ddx(Qb1b2, V(b2)) - ddx(Qb1b2, V(c2)); // Capacitance AC current crowding + +OP_cb1b2x = - ddx(Qb1b2, V(e)) - ddx(Qb1b2, V(e1)); // Cross-capacitance AC current crowding +OP_cb1b2y = - ddx(Qb1b2, V(c2)); // Cross-capacitance AC current crowding +OP_cb1b2z = - ddx(Qb1b2, V(c1)) ; // Cross-capacitance AC current crowding + +`ifdef SUBSTRATE +OP_cts = ddx(Qts, V(s)) ; // Capacitance s-c junction +`endif + +// Approximate small signal equivalent circuit +dydx = (OP_gx - OP_gmux) / (OP_grcvy + OP_gmuy - OP_gy); +dydz = (OP_gz - OP_grcvz - OP_gmuz) / (OP_grcvy + OP_gmuy - OP_gy); +gpi = OP_sgpi + OP_gpix + OP_gmux + OP_gpiz + OP_gmuz + + (OP_gpiy + OP_gmuy) * (dydx + dydz); +OP_gm = (OP_grcvy * (OP_gx - OP_gmux + // Transconductance + OP_gz - OP_gmuz) - OP_grcvz * + (OP_gy - OP_gmuy)) / (OP_grcvy + OP_gmuy - OP_gy); +OP_beta = OP_gm / gpi; // Current amplification +OP_gout = ((OP_gy - OP_gmuy) * OP_grcvz - // Output conductance + (OP_gz - OP_gmuz) * OP_grcvy) / + (OP_grcvy + OP_gmuy - OP_gy); +OP_gmu = OP_gpiz + OP_gmuz + (OP_gpiy + OP_gmuy) * dydz + // Feedback transconductance + OP_gmuex + OP_xgmuex; +OP_rb = RBC_TM + OP_rbv; // Base resistance +OP_rc = OP_rcc + OP_rcblx + OP_rcbli; // Collector resistance +OP_cbe = OP_cbex + OP_scbe + OP_cbcx + // Base-emitter capacitance + (OP_cbey + OP_cbcy) * dydx + CBEO_M; +OP_cbc = (OP_cbey + OP_cbcy) * dydz + OP_cbcz + // Base-collector capacitance + OP_cbcex + OP_xcbcex + CBCO_M; + + +// Quantities to describe internal state of the model +gammax = (OP_gpix + OP_gmux - OP_grbvx) * OP_rbv; +gammay = (OP_gpiy + OP_gmuy - OP_grbvy) * OP_rbv; +gammaz = (OP_gpiz + OP_gmuz - OP_grbvz) * OP_rbv; +gbfx = OP_gpix + OP_sgpi * (1.0 + gammax); +gbfy = OP_gpiy + OP_sgpi * gammay; +gbfz = OP_gpiz + OP_sgpi * gammaz; + +// RvdT March 2008: +alpha_ft = (1.0 + (OP_grcvy * dydx * OP_rc) + + (OP_gx + gbfx + (OP_gy + gbfy) * dydx) * RE_TM)/ + (1.0 - (OP_grcvz + OP_grcvy * dydz) * OP_rc - + (OP_gz + gbfz + (OP_gy + gbfy) * dydz) * RE_TM); + +rx = pow((OP_grcvy * dydx + alpha_ft * (OP_grcvz + OP_grcvy * dydz)), -1); +rz = alpha_ft * rx; +ry = (1.0 - OP_grcvz * rz) / OP_grcvy; +rb1b2 = gammax * rx + gammay * ry + gammaz * rz; +rex = rz + rb1b2 - OP_rcbli; +xrex = rex + RBC_TM * ((gbfx + OP_gmux) * rx + (gbfy + OP_gmuy) * ry + + (gbfz + OP_gmuz) * rz) - OP_rcbli - OP_rcblx; + +taut = OP_scbe * (rx + rb1b2) + (OP_cbex + OP_cbcx) * rx + (OP_cbey + OP_cbcy) * + ry + (OP_cbez + OP_cbcz) * rz + OP_cbcex * rex + OP_xcbcex * xrex + + (CBEO_M + CBCO_M) * (xrex - RCCxx_TM); + +OP_ft = 1.0 / (2.0 * `PI * taut); // Good approximation for cut-off frequency +OP_iqs = Iqs; // Current at onset of quasi-saturation +OP_xiwepi = xi_w; // Thickness of injection layer +OP_vb2c2star = Vb2c2star; // Physical value of internal base-collector bias + +//self-heating +`ifdef SELFHEATING +OP_pdiss = power; // Dissipation +`endif + +OP_tk = Tk; // Actual temperature + +`endif +end diff --git a/src/spicelib/devices/adms/mextram/adms3va/opvars.inc b/src/spicelib/devices/adms/mextram/adms3va/opvars.inc new file mode 100644 index 000000000..f2f927a36 --- /dev/null +++ b/src/spicelib/devices/adms/mextram/adms3va/opvars.inc @@ -0,0 +1,152 @@ +// +// Operation point (output) variables +// + +// The external currents and current gain +`OPP(OP_ic, A, External DC collector current) +`OPP(OP_ib, A, External DC base current) +`OPP(OP_betadc, , External DC current gain Ic/Ib) + +// begin added in MXT 504.9: +`OPP(OP_ie, A, External DC emitter current) + +// The external biases +`OPP(OP_vbe, V, External base-emitter bias) +`OPP(OP_vce, V, External collector-emitter bias) +`OPP(OP_vbc, V, External base-collector bias) + +`ifdef SUBSTRATE +`OPP(OP_is, A, External DC substrate current) +`OPP(OP_vse, V, External substrate-emitter bias) +`OPP(OP_vbs, V, External base-substrate bias) +`OPP(OP_vsc, V, External substrate-collector bias) +`endif + +// end added in MXT 504.9 +// The internal biases +`OPP(OP_vb2e1, V, Internal base-emitter bias) +`OPP(OP_vb2c2, V, Internal base-collector bias) +`OPP(OP_vb2c1, V, Internal base-collector bias including epilayer) +`OPP(OP_vb1c1, V, External base-collector bias without contact resistances) +`OPP(OP_vc4c1, V, Bias over intrinsic buried layer) +`OPP(OP_vc3c4, V, Bias over extrinsic buried layer) +`OPP(OP_ve1e, V, Bias over emitter resistance) + +// The actual currents +`OPP(OP_in, A, Main current) +`OPP(OP_ic1c2, A, Epilayer current) +`OPP(OP_ib1b2, A, Pinched-base current) +`OPP(OP_ib1, A, Ideal forward base current) +`OPP(OP_sib1, A, Ideal side-wall base current) +// +// 504.8, RvdT, TU-Delft April. 2009, Zener tunneling current: +// +`OPP(OP_izteb, A, Zener tunneling current in the emitter base junction) +// +`OPP(OP_ib2, A, Non-ideal forward base current) +`OPP(OP_ib3, A, Non-ideal reverse base current) +`OPP(OP_iavl, A, Avalanche current) +`OPP(OP_iex, A, Extrinsic reverse base current) + +`OPP(OP_xiex, A, Extrinsic reverse base current) +`ifdef SUBSTRATE +`OPP(OP_isub, A, Substrate current) +`OPP(OP_xisub, A, Substrate current) +`OPP(OP_isf, A, Substrate failure current) +`endif +`OPP(OP_ire, A, Current through emitter resistance) +`OPP(OP_irbc, A, Current through constant base resistance) +`OPP(OP_ircblx, A, Current through extrinsic buried layer resistance) +`OPP(OP_ircbli, A, Current through intrinsic buried layer resistance) +`OPP(OP_ircc, A, Current through collector contact resistance) + +//The actual charges +`OPP(OP_qe, C, Emitter charge or emitter neutral charge) +`OPP(OP_qte, C, Base-emitter depletion charge) +`OPP(OP_sqte, C, Sidewall base-emitter depletion charge) +`OPP(OP_qbe, C, Base-emitter diffusion charge) +`OPP(OP_qbc, C, Base_collector diffusion charge) +`OPP(OP_qtc, C, Base-collector depletion charge) +`OPP(OP_qepi, C, Epilayer diffusion charge) +`OPP(OP_qb1b2, C, AC current crowding charge) +`OPP(OP_qtex, C, Extrinsic base-collector depletion charge) +`OPP(OP_xqtex, C, Extrinsic base-collector depletion charge) +`OPP(OP_qex, C, Extrinsic base-collector diffusion charge) +`OPP(OP_xqex, C, Extrinsic base-collector diffusion charge) +`ifdef SUBSTRATE +`OPP(OP_qts, C, Collector-substrate depletion charge) +`endif + +//Small signal equivalent circuit conductances and resistances +`OPP(OP_gx, S, Forward transconductance) +`OPP(OP_gy, S, Reverse transconductance) +`OPP(OP_gz, S, Reverse transconductance) +`OPP(OP_sgpi, S, Conductance sidewall b-e junction) +`OPP(OP_gpix, S, Conductance floor b-e junction) +`OPP(OP_gpiy, S, Early effect on recombination base current) +`OPP(OP_gpiz, S, Early effect on recombination base current) +`OPP(OP_gmux, S, Early effect on avalanche current limiting) +`OPP(OP_gmuy, S, Conductance of avalanche current) +`OPP(OP_gmuz, S, Conductance of avalanche current) +`OPP(OP_gmuex, S, Conductance of extrinsic b-c junction) +`OPP(OP_xgmuex, S, Conductance of extrinsic b-c junction) +`OPP(OP_grcvy, S, Conductance of epilayer current) +`OPP(OP_grcvz, S, Conductance of epilayer current) +`OPP(OP_rbv, Ohm, Base resistance) +`OPP(OP_grbvx, S, Early effect on base resistance) +`OPP(OP_grbvy, S, Early effect on base resistance) +`OPP(OP_grbvz, S, Early effect on base resistance) +`OPP(OP_re, Ohm, Emitter resistance) +`OPP(OP_rbc, Ohm, Constant base resistance) +`OPP(OP_rcc, Ohm, Collector contact resistance) +`OPP(OP_rcblx, Ohm, Extrinsic buried layer resistance) +`OPP(OP_rcbli, Ohm, Intrinsic buried layer resistance) +`ifdef SUBSTRATE +`OPP(OP_gs, S, Conductance parasistic PNP transistor) +`OPP(OP_xgs, S, Conductance parasistic PNP transistor) +`OPP(OP_gsf, S, Conductance substrate failure current) +`endif +//Small signal equivalent circuit capacitances +`OPP(OP_scbe, F, Capacitance sidewall b-e junction) +`OPP(OP_cbex, F, Capacitance floor b-e junction) +`OPP(OP_cbey, F, Early effect on b-e diffusion charge) +`OPP(OP_cbez, F, Early effect on b-e diffusion charge) +`OPP(OP_cbcx, F, Early effect on b-c diffusion charge) +`OPP(OP_cbcy, F, Capacitance floor b-c junction) +`OPP(OP_cbcz, F, Capacitance floor b-c junction) +`OPP(OP_cbcex, F, Capacitance extrinsic b-c junction) +`OPP(OP_xcbcex, F, Capacitance extrinsic b-c junction) +`OPP(OP_cb1b2, F, Capacitance AC current crowding) +`OPP(OP_cb1b2x, F, Cross-capacitance AC current crowding) +`OPP(OP_cb1b2y, F, Cross-capacitance AC current crowding) +`OPP(OP_cb1b2z, F, Cross-capacitance AC current crowding) +`ifdef SUBSTRATE +`OPP(OP_cts, F, Capacitance s-c junction) +`endif +//Approximate small signal equivalent circuit +`OPP(OP_gm, S,transconductance) +`OPP(OP_beta, , Current amplification) +`OPP(OP_gout, S, Output conductance) +`OPP(OP_gmu, S, Feedback transconductance) +`OPP(OP_rb, Ohm, Base resistance) +`OPP(OP_rc, Ohm, Collector resistance) +`OPP(OP_cbe, C, Base-emitter capacitance) +`OPP(OP_cbc, C, Base-collector capacitance) + +//quantities to describe internal state of the model +`OPP(OP_ft, , Good approximation for cut-off frequency) +`OPP(OP_iqs, A, Current at onset of quasi-saturation) +`OPP(OP_xiwepi, m, Thickness of injection layer) +`OPP(OP_vb2c2star, V, Physical value of internal base-collector bias) + +//self-heating +`ifdef SELFHEATING +`OPP(OP_pdiss, W, Dissipation) +`endif +`OPP(OP_tk, K, Actual temperature) + +//help variables +real dydx, dydz, gpi; +real gammax, gammay, gammaz, gbfx, gbfy, gbfz, alpha_ft; +real rx, ry, rz, rb1b2, rex, xrex, taut; + diff --git a/src/spicelib/devices/adms/mextram/adms3va/parameters.inc b/src/spicelib/devices/adms/mextram/adms3va/parameters.inc new file mode 100644 index 000000000..2d83a9029 --- /dev/null +++ b/src/spicelib/devices/adms/mextram/adms3va/parameters.inc @@ -0,0 +1,209 @@ +// Mextram parameters + +parameter integer LEVEL = 504 from [504:505) + `ATTR(info="Model level"); +parameter real TREF = 25.0 from [-273.0:inf) + `ATTR(info="Reference temperature"); +parameter real DTA = 0.0 + `ATTR(info="Difference between the local and global ambient temperatures"); +parameter integer EXMOD = 1 from [0:1] + `ATTR(info="Flag for extended modeling of the reverse current gain"); +parameter integer EXPHI = 1 from [0:1] + `ATTR(info="Flag for the distributed high-frequency effects in transient"); +parameter integer EXAVL = 0 from [0:1] + `ATTR(info="Flag for extended modeling of avalanche currents"); + +parameter real IS = 22.0a from (0.0:inf) + `ATTR(info="Collector-emitter saturation current"); +parameter real IK = 0.1 from [1.0p:inf) + `ATTR(info="Collector-emitter high injection knee current"); +parameter real VER = 2.5 from [0.01:inf) + `ATTR(info="Reverse Early voltage"); +parameter real VEF = 44.0 from [0.01:inf) + `ATTR(info="Forward Early voltage"); +parameter real BF = 215.0 from [0.1m:inf) + `ATTR(info="Ideal forward current gain"); +parameter real IBF = 2.7f from [0.0:inf) + `ATTR(info="Saturation current of the non-ideal forward base current"); +parameter real MLF = 2.0 from [0.1:inf) + `ATTR(info="Non-ideality factor of the non-ideal forward base current"); +parameter real XIBI = 0.0 from [0.0:1.0] + `ATTR(info="Part of ideal base current that belongs to the sidewall"); +// begin: RvdT, November 2008, BE tunneling current parameters: +parameter real IZEB = 0.0 from [0.0:inf) + `ATTR(info="Pre-factor of emitter-base Zener tunneling current"); +parameter real NZEB = 22.0 from [0.0:inf) + `ATTR(info="Coefficient of emitter-base Zener tunneling current"); +// end: RvdT, November 2008, EB tunneling current parameters: +parameter real BRI = 7.0 from [1.0e-4:inf) + `ATTR(info="Ideal reverse current gain"); +parameter real IBR = 1.0f from [0.0:inf) + `ATTR(info="Saturation current of the non-ideal reverse base current"); +parameter real VLR = 0.2 + `ATTR(info="Cross-over voltage of the non-ideal reverse base current"); +parameter real XEXT = 0.63 from [0.0:1.0] + `ATTR(info="Part of currents and charges that belong to extrinsic region"); + +parameter real WAVL = 1.1u from [1.0n:inf) + `ATTR(info="Epilayer thickness used in weak-avalanche model"); +parameter real VAVL = 3.0 from [0.01:inf) + `ATTR(info="Voltage determining curvature of avalanche current"); +parameter real SFH = 0.3 from [0.0:inf) + `ATTR(info="Current spreading factor of avalanche model when EXAVL=1"); +// RvdT, 22-02-2008: for MXT 504.7 +// increased lower clipping values RE, RBC, RBV, RCC, RCV, SCRCV +// from 1u to 1m: +parameter real RE = 5.0 from [1.0m:inf) + `ATTR(info="Emitter resistance"); +parameter real RBC = 23.0 from [1.0m:inf) + `ATTR(info="Constant part of the base resistance"); +parameter real RBV = 18.0 from [1.0m:inf) + `ATTR(info="Zero-bias value of the variable part of the base resistance"); +parameter real RCC = 12.0 from [1.0m:inf) + `ATTR(info="Constant part of the collector resistance"); +parameter real RCV = 150.0 from [1.0m:inf) + `ATTR(info="Resistance of the un-modulated epilayer"); +parameter real SCRCV = 1250.0 from [1.0m:inf) + `ATTR(info="Space charge resistance of the epilayer"); +parameter real IHC = 4.0m from [1.0p:inf) + `ATTR(info="Critical current for velocity saturation in the epilayer"); +parameter real AXI = 0.3 from [0.02:inf) + `ATTR(info="Smoothness parameter for the onset of quasi-saturation"); + +parameter real CJE = 73.0f from [0.0:inf) + `ATTR(info="Zero-bias emitter-base depletion capacitance"); +parameter real VDE = 0.95 from [0.05:inf) + `ATTR(info="Emitter-base diffusion voltage"); +parameter real PE = 0.4 from [0.01:0.99) + `ATTR(info="Emitter-base grading coefficient"); +parameter real XCJE = 0.4 from [0.0:1.0] + `ATTR(info="Sidewall fraction of the emitter-base depletion capacitance"); +parameter real CBEO = 0.0 from [0.0:inf) + `ATTR(info="Emitter-base overlap capacitance"); + +parameter real CJC = 78.0f from [0.0:inf) + `ATTR(info="Zero-bias collector-base depletion capacitance"); +parameter real VDC = 0.68 from [0.05:inf) + `ATTR(info="Collector-base diffusion voltage"); +parameter real PC = 0.5 from [0.01:0.99) + `ATTR(info="Collector-base grading coefficient"); +parameter real XP = 0.35 from [0.0:0.99) + `ATTR(info="Constant part of Cjc"); +parameter real MC = 0.5 from [0.0:1.0) + `ATTR(info="Coefficient for current modulation of CB depletion capacitance"); +parameter real XCJC = 32.0m from [0.0:1.0] + `ATTR(info="Fraction of CB depletion capacitance under the emitter"); +// RvdT, 30-11-2007: introduced RCBLX and RCBLI: +parameter real RCBLX = 0.0 from [0.0:inf) + `ATTR(info="Resistance Collector Buried Layer eXtrinsic"); +parameter real RCBLI = 0.0 from [0.0:inf) + `ATTR(info="Resistance Collector Buried Layer Intrinsic"); +parameter real CBCO = 0.0 from [0.0:inf) + `ATTR(info="Collector-base overlap capacitance"); + +parameter real MTAU = 1.0 from [0.1:inf) + `ATTR(info="Non-ideality factor of the emitter stored charge"); +parameter real TAUE = 2.0p from [0.0:inf) + `ATTR(info="Minimum transit time of stored emitter charge"); +parameter real TAUB = 4.2p from (0.0:inf) + `ATTR(info="Transit time of stored base sharge"); +parameter real TEPI = 41.0p from [0.0:inf) + `ATTR(info="Transit time of stored epilayer charge"); +parameter real TAUR = 520.0p from [0.0:inf) + `ATTR(info="Transit time of reverse extrinsic stored base charge"); + +parameter real DEG = 0.0 + `ATTR(info="Bandgap difference over the base"); +parameter real XREC = 0.0 from [0.0:inf) + `ATTR(info="Pre-factor of the recombination part of Ib1"); + +parameter real AQBO = 0.3 + `ATTR(info="Temperature coefficient of the zero-bias base charge"); +parameter real AE = 0.0 + `ATTR(info="Temperature coefficient of the resistivity of the emitter"); +parameter real AB = 1.0 + `ATTR(info="Temperature coefficient of the resistivity of the base"); +parameter real AEPI = 2.5 + `ATTR(info="Temperature coefficient of the resistivity of the epilayer"); +parameter real AEX = 0.62 + `ATTR(info="Temperature coefficient of the resistivity of the extrinsic base"); +parameter real AC = 2.0 + `ATTR(info="Temperature coefficient of the resistivity of the collector contact"); +// RvdT, 30-01-2007: introduced ACBL +parameter real ACBL = 2.0 from [0.0:inf) + `ATTR(info="Temperature coefficient of the resistivity of the collector buried layer"); +parameter real DVGBF = 50.0m + `ATTR(info="Band-gap voltage difference of the forward current gain"); +parameter real DVGBR = 45.0m + `ATTR(info="Band-gap voltage difference of the reverse current gain"); +parameter real VGB = 1.17 from [0.1:inf) + `ATTR(info="Band-gap voltage of the base"); +parameter real VGC = 1.18 from [0.1:inf) + `ATTR(info="Band-gap voltage of the collector"); +parameter real VGJ = 1.15 from [0.1:inf) + `ATTR(info="Band-gap voltage recombination emitter-base junction"); +parameter real VGZEB = 1.15 from [0.1:inf) + `ATTR(info="Band-gap voltage at Tref of Zener effect emitter-base junction"); +parameter real AVGEB = 4.73e-4 from (-inf:inf) + `ATTR(info="Temperature coefficient band-gap voltage for Zener effect emitter-base junction"); +parameter real TVGEB = 636.0 from [0.0:inf) + `ATTR(info="Temperature coefficient band-gap voltage for Zener effect emitter-base junction"); +parameter real DVGTE = 0.05 + `ATTR(info="Band-gap voltage difference of emitter stored charge"); +parameter real DAIS = 0.0 + `ATTR(info="Fine tuning of temperature dependence of C-E saturation current"); + +parameter real AF = 2.0 from [0.01:inf) + `ATTR(info="Exponent of the Flicker-noise"); +parameter real KF = 20.0p from [0.0:inf) + `ATTR(info="Flicker-noise coefficient of the ideal base current"); +parameter real KFN = 20.0p from [0.0:inf) + `ATTR(info="Flicker-noise coefficient of the non-ideal base current"); +parameter integer KAVL = 0 from [0:1] + `ATTR(info="Switch for white noise contribution due to avalanche"); + +`ifdef SUBSTRATE +parameter real ISS = 48.0a from [0.0:inf) + `ATTR(info="Base-substrate saturation current"); +parameter real ICSS = -1.0 from (-inf:inf) + `ATTR(info="Collector-substrate ideal saturation current"); +parameter real IKS = 250.0u from [1.0p:inf) + `ATTR(info="Base-substrate high injection knee current"); +parameter real CJS = 315.0f from [0:inf) + `ATTR(info="Zero-bias collector-substrate depletion capacitance"); +parameter real VDS = 0.62 from (0.05:inf) + `ATTR(info="Collector-substrate diffusion voltage"); +parameter real PS = 0.34 from (0.01:0.99) + `ATTR(info="Collector-substrate grading coefficient"); +parameter real VGS = 1.20 from [0.1:inf) + `ATTR(info="band-gap voltage of the substrate"); +parameter real AS = 1.58 + `ATTR(info="Substrate temperature coefficient"); +parameter real ASUB = 2.0 + `ATTR(info="Temperature coefficient for mobility of minorities in the substrate"); +`endif + +`ifdef SELFHEATING +parameter real RTH = 300.0 from (0.0:inf) + `ATTR(info="Thermal resistance"); +parameter real CTH = 3.0n from [0.0:inf) + `ATTR(info="Thermal capacitance"); +parameter real ATH = 0.0 + `ATTR(info="Temperature coefficient of the thermal resistance"); +`endif + +parameter real MULT = 1.0 from (0.0:inf) + `ATTR(info="Multiplication factor"); + +// Non-standard (additional) model parameters +// (introduced for the users' convenience) + +`ifdef insideADMS +parameter integer TYPE = 1 from [-1:1] + `ATTR(info="Flag for NPN (1) or PNP (-1) transistor type"); +`else +parameter integer TYPE = 1 from [-1:1] exclude 0; +`endif +parameter real GMIN = 1.0e-13 from (0:1e-10] + `ATTR(info="Minimum conductance"); + diff --git a/src/spicelib/devices/adms/mextram/adms3va/tscaling.inc b/src/spicelib/devices/adms/mextram/adms3va/tscaling.inc new file mode 100644 index 000000000..345cfc32a --- /dev/null +++ b/src/spicelib/devices/adms/mextram/adms3va/tscaling.inc @@ -0,0 +1,242 @@ +// Temperature scaling of parameters + + // The excess transistor temperature due to the self-heating +`ifdef SELFHEATING + Tki = V(dt); + // *** Convergence related smoothing *** + if (Tki < 0.0) begin + Tki = - ln(1.0 - Tki); + end + `linLog(Vdt, Tki, 200.0); +// `min_logexp(Vdt, Tki, 200.0, 10.0); +`else + Vdt = 0.0; +`endif + + // Temperature variables + + +`ifdef insideADMS + Tk = Trk + DTA + Vdt; + Tamb = Trk + DTA; +`else + Tk = $temperature + DTA + Vdt; + Tamb = $temperature + DTA; +`endif + + tN = Tk / Trk; + Vt = `KBdivQQ * Tk; + Vtr = `KBdivQQ * Trk; + VtINV = 1.0 / Vt; + VtrINV = 1.0 / Vtr; + VdtINV = VtINV - VtrINV; + + lntN = ln(tN) ; + + // begin: RvdT, November 2008, "Zener tunneling model" +// VGZEB_T = VGZEBOK - AVGEB*Tk*Tk / (Tk + TVGEB) ; + `max_logexp(VGZEB_T, VGZEBOK - AVGEB*Tk*Tk / (Tk + TVGEB), 0.05, 0.1) ; + + // end: RvdT, November 2008, "Zener tunneling model" + + // Depletion capacitances + + UdeT = -3.0 * Vt * ln(tN) + VDE * tN + (1.0 - tN) * VGB; + `max_logexp(VDE_T, `VDLOW, UdeT, Vt); + + UdcT = -3.0 * Vt * ln(tN) + VDC * tN + (1.0 - tN) * VGC; + `max_logexp(VDC_T, `VDLOW, UdcT, Vt); + +`ifdef SUBSTRATE + UdsT = -3.0 * Vt * ln(tN) + VDS * tN + (1.0 - tN) * VGS; + `max_logexp(VDS_T, `VDLOW, UdsT, Vt); +`endif + inv_VDE_T = 1.0 / VDE_T ; + CJE_T_div_CJE = pow(VDE * inv_VDE_T, PE); + CJE_T = CJE * CJE_T_div_CJE ; + +`ifdef SUBSTRATE + CJS_T = CJS * pow(VDS / VDS_T, PS); +`endif + + CJCscale = ((1.0 - XP) * pow(VDC / VDC_T, PC) + XP); + CJCscaleINV = 1.0 / CJCscale; + + CJC_T = CJC * CJCscale; + XP_T = XP * CJCscaleINV; + + // Resistances + +// RvdT, November 2008: +// Instead of the following definition +// RE_T = RE * pow(tN, AE); +// we use, here, and in all following powers of tN, +// the following computationally cheaper implementation: + RE_T = RE * exp(lntN * AE); +// This is based on the observation that exp() is faster than pow(). +// Acknowledgement due to Geoffrey Coram. + + RBV_T = RBV * exp(lntN * (AB - AQBO)); + RBC_T = RBC * exp(lntN * AEX); + +// RvdT, 30-11-2007: new collector resistances RCCxx_T, RCCex_T, RCCin_T + RCCxx_T = RCC * exp(lntN * AC); + RCCex_T = RCBLX * exp(lntN * ACBL); + RCCin_T = RCBLI * exp(lntN * ACBL); + + RCV_T = RCV * exp(lntN * AEPI); + + // Current gains + + BF_T = BF * exp(lntN * (AE - AB - AQBO)) * exp(-DVGBF * VdtINV); + BRI_T = BRI * exp(-DVGBR * VdtINV); + + // Currents and voltages + + IS_T = IS * exp(lntN * (4.0 - AB - AQBO + DAIS)) * exp(-VGB * VdtINV); + IK_T = IK * exp(lntN * (1.0 - AB)); + IBF_T = IBF * exp(lntN * (6.0 - 2.0 * MLF)) * exp(-VGJ * VdtINV / MLF); + IBR_T = IBR * tN * tN * exp(-VGC * VdtINV / 2.0); + +// begin RvdT, November 2008, MXT504.8_alpha +// T-scaling BE tunneling: +// + x = pow(VGZEB_T * inv_VGZEB_Tr, -0.5) ; +// y = pow(VDE_T * inv_VDE, PE) ; +// more efficient, because we need both y and 1.0 / y: + y = 1.0 / CJE_T_div_CJE ; +// definition: +// nZEB_T = NZEB* pow(VGZEB_T/VGZEB_Tr, 1.5) * pow(VDE_T / VDE, PE-1) ; +// more efficient implementation: +// nZEB_T = NZEB* VGZEB_T * VGZEB_T * x * y * VDE /(VDE_T*VGZEB_Tr*VGZEB_Tr) ; + nZEB_T = NZEB* VGZEB_T * VGZEB_T * x * y * VDE * inv_VDE_T*inv_VGZEB_Tr*inv_VGZEB_Tr ; + +// definition: +// IZEB_T = IZEB* pow(VGZEB_T/VGZEB_Tr, -0.5) * pow(VDE_T / VDE, 2-PE) * exp(NZEB-nZEB_T); +// more efficient implementation: + IZEB_T = IZEB* x * VDE_T * VDE_T * inv_VDE * inv_VDE * CJE_T_div_CJE * exp(NZEB-nZEB_T) ; +// +// end RvdT, November 2008, MXT504.8_alpha + + x = exp(lntN * AQBO) ; + VEF_T = VEF * x * CJCscaleINV; +// VER_T = VER * x * pow(VDE / VDE_T, -PE); + VER_T = VER * x * y; + +`ifdef SUBSTRATE + ISS_T = ISS * exp(lntN * (4.0 - AS)) * exp(-VGS * VdtINV); +// New 504.9: + ICSS_T = ICSS * exp(lntN * (3.5 - 0.5 * ASUB)) * exp(-VGS * VdtINV); +// End New 504.9. + + if ((ISS_T > 0.0)) + IKS_T = IKS * exp(lntN * (1.0 - AS)) * (IS_T / IS) * (ISS / ISS_T); + else + IKS_T = IKS * exp(lntN * (1.0 - AS)); +`endif + + // Transit times + + TAUE_T = TAUE * exp(lntN * (AB - 2.0)) * exp(-DVGTE * VdtINV); + TAUB_T = TAUB * exp(lntN * (AQBO + AB - 1.0)); + TEPI_T = TEPI * exp(lntN * (AEPI - 1.0)); + TAUR_T = TAUR * (TAUB_T + TEPI_T) / (TAUB + TEPI); + + // Avalanche constant + + Tk300 = Tk - 300.0; +// RvdT, 15-02-2008: prevent division by zero and overflow at high temperatures: + if (Tk < 525.0) + begin + BnT = Bn * (1.0 + 7.2e-4 * Tk300 - 1.6e-6 * Tk300 * Tk300) ; + end + else + begin + BnT = Bn * 1.081 ; + end + + // Heterojunction features + + DEG_T = DEG * exp(lntN * AQBO); + +`ifdef SELFHEATING + // Tempearature scaling of the thermal resistance + + RTH_Tamb = RTH * pow(Tamb / Trk, ATH); +`endif + +// MULT - scaling + + IS_TM = IS_T * MULT; + IK_TM = IK_T * MULT; + IBF_TM = IBF_T * MULT; + IBR_TM = IBR_T * MULT; +// RvdT: November 2008, Zener tunneling parameters + IZEB_TM = IZEB_T * MULT ; + +// end Zener tunneling parameters + + + + + IHC_M = IHC * MULT; +`ifdef SUBSTRATE + ISS_TM = ISS_T * MULT; +// New: 504.9 + ICSS_TM = ICSS_T * MULT; + IKS_TM = IKS_T * MULT; +`endif + CJE_TM = CJE_T * MULT; + CJC_TM = CJC_T * MULT; + +// begin RvdT, 28-10-2008, MXT504.8_alpha +// Base-emitter tunneling current Mult scaling: +// BTJE_TM = BTJE_T * MULT; +// end RvdT, 28-10-2008, MXT504.8_alpha + + +`ifdef SUBSTRATE + CJS_TM = CJS_T * MULT; +`endif + + RE_TM = RE_T * invMULT; + RBC_TM = RBC_T * invMULT; + RBV_TM = RBV_T * invMULT; +// RvdT, 30-01-2007: new collector resistances: + RCCxx_TM = RCCxx_T * invMULT; + RCCex_TM = RCCex_T * invMULT; + RCCin_TM = RCCin_T * invMULT; + RCV_TM = RCV_T * invMULT; + + +// RvdT, 03-12-2007: new collector conductances + if (RCC > 0.0) + begin + GCCxx_TM = 1.0 / RCCxx_TM ; + end + else + begin + GCCxx_TM = 0 ; + end + + if (RCBLX > 0.0) + begin + GCCex_TM = 1.0 / RCCex_TM ; + end + else + begin + GCCex_TM = 0 ; + end + + if (RCBLI > 0.0) + begin + GCCin_TM = 1.0 / RCCin_TM ; + end + else + begin + GCCin_TM = 0 ; + end + +`ifdef SELFHEATING + RTH_Tamb_M = RTH_Tamb * invMULT; +`endif diff --git a/src/spicelib/devices/adms/mextram/adms3va/variables.inc b/src/spicelib/devices/adms/mextram/adms3va/variables.inc new file mode 100644 index 000000000..85c5d32da --- /dev/null +++ b/src/spicelib/devices/adms/mextram/adms3va/variables.inc @@ -0,0 +1,197 @@ +// Declaration of variables + +real _x, _x0, _a, _dxa; + +real _circuit_gmin; + +// Model constants + +real An, Bn; + +// Temperature scaling variables + +real Tk, Trk, tN, Tamb; +real Vt, Vtr, VtINV, VtrINV, VdtINV; +real Vdt; + +real UdeT, VDE_T, UdcT, VDC_T; +real CJE_T, CJC_T, XP_T; +real CJCscale, CJCscaleINV; + +real RE_T, RBV_T, RBC_T, RCV_T; +// RvdT: 30-01-2007, new collector resistances: +real RCCxx_T, RCCex_T, RCCin_T; + +real BF_T, BRI_T; + +real IS_T, IK_T, IBF_T, IBR_T, VEF_T, VER_T; + +// RvdT: November 2008, Zener tunneling parameters and variables: +real Izteb, IZEB_T, E0BE, dE0BE,nZEB_T, pow2_2mPE, pow2_PEm2, inv_VDE, inv_VDE_T; +real eZEB, edZEB, DZEB, VGZEB_T, VGZEB_Tr, inv_VGZEB_Tr, CJE_T_div_CJE ; + +// RvdT: March 2009, Zener tunneling parameters and variables: +real VGZEBOK; + +// end Zener tunneling parameters + +real TAUE_T, TAUB_T, TEPI_T, TAUR_T; +real BnT, DEG_T, Tk300; + +`ifdef SELFHEATING +real RTH_Tamb; +`endif + +`ifdef SUBSTRATE +real UdsT, VDS_T, CJS_T, ISS_T, ICSS_T, IKS_T; +`endif + +// MULT - scaling variables + +real invMULT; +real IS_TM, IK_TM, IBF_TM, IBR_TM, IHC_M; +// RvdT: November 2008, Zener tunneling parameters +real IZEB_TM ; + +// end Zener tunneling parameters + + + + +real CJE_TM, CJC_TM; + +real RE_TM, RBC_TM, RBV_TM, RCV_TM, SCRCV_M; +// RvdT: 30-01-2007, new collector resistances: +real RCCxx_TM, RCCex_TM, RCCin_TM; +// RvdT: 03-12-2007, new collector conductances: +real GCCxx_TM, GCCex_TM, GCCin_TM; + + +real KF_M, KFN_M; + +`ifdef SELFHEATING +real RTH_Tamb_M, CTH_M; +`endif + +`ifdef SUBSTRATE +real ISS_TM, ICSS_TM, IKS_TM, CJS_TM; +`endif + + +// Epilayer model variables + +real K0, Kw, pW, Ec, Ic1c2; +real Vqs_th, Vqs, Iqs; +real alpha, vyi, yi, xi_w, xi_w1; +real gp0, gp02, p0star, Vb2c2star, eVb2c2star; +real B1, B2, Vxi0, Vch, Icap, pav; + +// Effective emitter and collector junction bias variables + +real Vfe, Vje, Vte; +real Vjunc, bjc, Vfc, Vjc, fI, Vcv, Vtc; + +// Transfer current variables + +real If0, f1, f2, n0, nB; +real q0I, q1I, qBI, Ir, If, In; + +// Base and substrate current(s) variables + +real Xext1; +real Ib1, Ib1_s, Ib2, Ib3; +real Ibf0, Iex; +real g1, g2, pWex, nBex; +real Xg1, XnBex, XIMex, XIMsub, Vex, VBex, Fex, XIex; + +`ifdef SUBSTRATE +real Isub, XIsub, Isf; +`endif + +// Distributed base effects variables + +real q0Q, q1Q, qBQ, Rb2, Ib1b2; +real dVteVb2e1, dVteVje, dVjeVb2e1; +real dQteVb2e1, dQbeVb2e1, dQeVb2e1; +real dn0Vb2e1; + +// Weak-avalanche current variables + +real dEdx0, xd, Weff, Wd, Eav, E0, Em, SHw, Efi, Ew; +real lambda, Gem, Gmax, Iavl; +real Icap_IHC; + +`ifdef SELFHEATING +real Tki, power; +`endif + +// Charges and capacitances variables + +real Qte, Vje_s, Qte_s; +real Qtc; +real Qb0, Qbe, Qbc, Qb1b2; +real Qbe_qs, Qbc_qs; +real Vjcex, Vtexv, Qtex, XVjcex, XVtexv, XQtex; + +`ifdef SUBSTRATE +real Vfs, Vjs, Qts; +`endif + +real Qe0, Qe; +real Qepi0, Qepi, Xg2, XpWex, XQex; +real Qex; +real CBEO_M, CBCO_M; + +// Biases and exponential terms variables + +real Vb2c1, Vb2c2, Vb2e1, Vb1e1, Vb1b2, Vb1c4, Vc1c2; +// RvdT, 30-01-2007: new variables Vc3c4, Vc4c1 +real Vc3c4, Vc4c1; +// RvdT, 25-02-2008: new variables Vsc3, Vsc4 +`ifdef SUBSTRATE +real Vsc1, Vsc3, Vsc4, eVsc1; +`endif +real Vee1, Vbb1, Vbc3, Vcc3, Vbe, Vbc; +real eVb2c2, eVb2e1, eVb1e1, eVb1b2, eVb1c4, eVbc3; +real eVb1c4VDC, eVb2c2VDC, eVbc3VDC, eVb2c1VDC; + +// Help variables + +// RvdT, November 2008, lntN introduced to speed up T-scaling: +// Acknowledgements due to Geoffrey Coram +real lntN ; + +// RvdT, November 2008 variables for local use; may be re-used globally: +real x, y ; + +real dxa, sqr_arg; +real eps2, x2; +real alpha1, vdif, Ic1c2_Iqs, gp0_help; +real EmEav_Em, Vb2e1Vfe, termE, termC; +real Vex_bias; +real eps_VDC, a_VDE, a_VDC; + +real expl, tmpExp, tmpV; + + +`ifdef SUBSTRATE +real a_VDS; +`endif + +// Noise variables + +real common; +real powerREC, powerRBC, powerRCCxx, powerRCCex, powerRCCin, powerRBV; +real powerCCS; +real powerFBCS, powerFBC1fB1, exponentFBC1fB2, powerFBC1fB2; +real powerEBSCS, powerEBSC1f; +real powerRBCS, powerRBC1f; +real powerExCS, powerExCSMOD, powerExC1f, powerExC1fMOD; + +`ifdef SUBSTRATE +real powerSubsCS_B1S, powerSubsCS_BS; +`endif + +//real twoqIavl, powerCCS_A, powerFBCS_A, powerAVL_B2C2; +real twoqIavl, cor_exp_1, cor_exp_2, powerCCS_A; + diff --git a/src/spicelib/devices/adms/psp102/adms3va/JUNCAP200_InitModel.include b/src/spicelib/devices/adms/psp102/adms3va/JUNCAP200_InitModel.include new file mode 100644 index 000000000..f4dafbd85 --- /dev/null +++ b/src/spicelib/devices/adms/psp102/adms3va/JUNCAP200_InitModel.include @@ -0,0 +1,184 @@ +//====================================================================================== +//====================================================================================== +// Filename: JUNCAP200_InitModel.include +//====================================================================================== +//====================================================================================== +// +// (c) Copyright 2007, All Rights Reserved, NXP Semiconductors +// +// +// Version: 102.1 (PSP), 200.2 (JUNCAP), April 2007 (Simkit 2.5) +// +//====================================================================================== +//====================================================================================== +// +// Further information can be found in the file readme.txt +// + + ////////////////////////////////////////////////////////////// + // + // Calculation of internal paramters which are independent + // on instance parameters + // + ////////////////////////////////////////////////////////////// + + TRJ_i = `CLIP_LOW( TRJ , `TRJ_cliplow); + IMAX_i = `CLIP_LOW( IMAX , `IMAX_cliplow); + CJORBOT_i = `CLIP_LOW( CJORBOT , `CJORBOT_cliplow); + CJORSTI_i = `CLIP_LOW( CJORSTI , `CJORSTI_cliplow); + CJORGAT_i = `CLIP_LOW( CJORGAT , `CJORGAT_cliplow); + VBIRBOT_i = `CLIP_LOW( VBIRBOT , `VBIR_cliplow); + VBIRSTI_i = `CLIP_LOW( VBIRSTI , `VBIR_cliplow); + VBIRGAT_i = `CLIP_LOW( VBIRGAT , `VBIR_cliplow); + PBOT_i = `CLIP_BOTH(PBOT , `P_cliplow,`P_cliphigh); + PSTI_i = `CLIP_BOTH(PSTI , `P_cliplow,`P_cliphigh); + PGAT_i = `CLIP_BOTH(PGAT , `P_cliplow,`P_cliphigh); + IDSATRBOT_i = `CLIP_LOW( IDSATRBOT , `IDSATR_cliplow); + IDSATRSTI_i = `CLIP_LOW( IDSATRSTI , `IDSATR_cliplow); + IDSATRGAT_i = `CLIP_LOW( IDSATRGAT , `IDSATR_cliplow); + CSRHBOT_i = `CLIP_LOW( CSRHBOT , `CSRH_cliplow); + CSRHSTI_i = `CLIP_LOW( CSRHSTI , `CSRH_cliplow); + CSRHGAT_i = `CLIP_LOW( CSRHGAT , `CSRH_cliplow); + XJUNSTI_i = `CLIP_LOW( XJUNSTI , `XJUN_cliplow); + XJUNGAT_i = `CLIP_LOW( XJUNGAT , `XJUN_cliplow); + CTATBOT_i = `CLIP_LOW( CTATBOT , `CTAT_cliplow); + CTATSTI_i = `CLIP_LOW( CTATSTI , `CTAT_cliplow); + CTATGAT_i = `CLIP_LOW( CTATGAT , `CTAT_cliplow); + MEFFTATBOT_i = `CLIP_LOW( MEFFTATBOT, `MEFFTAT_cliplow); + MEFFTATSTI_i = `CLIP_LOW( MEFFTATSTI, `MEFFTAT_cliplow); + MEFFTATGAT_i = `CLIP_LOW( MEFFTATGAT, `MEFFTAT_cliplow); + CBBTBOT_i = `CLIP_LOW( CBBTBOT , `CBBT_cliplow); + CBBTSTI_i = `CLIP_LOW( CBBTSTI , `CBBT_cliplow); + CBBTGAT_i = `CLIP_LOW( CBBTGAT , `CBBT_cliplow); + VBRBOT_i = `CLIP_LOW( VBRBOT , `VBR_cliplow); + VBRSTI_i = `CLIP_LOW( VBRSTI , `VBR_cliplow); + VBRGAT_i = `CLIP_LOW( VBRGAT , `VBR_cliplow); + PBRBOT_i = `CLIP_LOW( PBRBOT , `PBR_cliplow); + PBRSTI_i = `CLIP_LOW( PBRSTI , `PBR_cliplow); + PBRGAT_i = `CLIP_LOW( PBRGAT , `PBR_cliplow); + + tkr = `KELVINCONVERSION + TRJ_i; + tkd = max($temperature + DTA, `KELVINCONVERSION + `MINTEMP); + auxt = tkd / tkr; + KBOL_over_QELE = `KBOL / `QELE; + phitr = KBOL_over_QELE * tkr; + phitrinv = 1.0 / phitr; + phitd = KBOL_over_QELE * tkd; + phitdinv = 1.0 / phitd; + + // bandgap voltages at reference temperature + deltaphigr = -(7.02e-4 * tkr * tkr) / (1108.0 + tkr); + phigrbot = PHIGBOT + deltaphigr; + phigrsti = PHIGSTI + deltaphigr; + phigrgat = PHIGGAT + deltaphigr; + + // bandgap voltages at device temperature + deltaphigd = -(7.02e-4 * tkd * tkd) / (1108.0 + tkd); + phigdbot = PHIGBOT + deltaphigd; + phigdsti = PHIGSTI + deltaphigd; + phigdgat = PHIGGAT + deltaphigd; + + // factors ftd for ideal-current model + ftdbot = (pow(auxt, 1.5)) * exp(0.5 * ((phigrbot * phitrinv) - (phigdbot * phitdinv))); + ftdsti = (pow(auxt, 1.5)) * exp(0.5 * ((phigrsti * phitrinv) - (phigdsti * phitdinv))); + ftdgat = (pow(auxt, 1.5)) * exp(0.5 * ((phigrgat * phitrinv) - (phigdgat * phitdinv))); + + // temperature-scaled saturation current for ideal-current model + idsatbot = IDSATRBOT_i * ftdbot * ftdbot; + idsatsti = IDSATRSTI_i * ftdsti * ftdsti; + idsatgat = IDSATRGAT_i * ftdgat * ftdgat; + + // built-in voltages before limiting + ubibot = VBIRBOT_i * auxt - 2 * phitd * ln(ftdbot); + ubisti = VBIRSTI_i * auxt - 2 * phitd * ln(ftdsti); + ubigat = VBIRGAT_i * auxt - 2 * phitd * ln(ftdgat); + + // built-in voltages limited to phitd + vbibot = ubibot + phitd * ln(1 + exp((`vbilow - ubibot) * phitdinv)); + vbisti = ubisti + phitd * ln(1 + exp((`vbilow - ubisti) * phitdinv)); + vbigat = ubigat + phitd * ln(1 + exp((`vbilow - ubigat) * phitdinv)); + + // inverse values of built-in voltages + vbiinvbot = 1.0 / vbibot; + vbiinvsti = 1.0 / vbisti; + vbiinvgat = 1.0 / vbigat; + + // one minus the grading coefficient + one_minus_PBOT = 1 - PBOT_i; + one_minus_PSTI = 1 - PSTI_i; + one_minus_PGAT = 1 - PGAT_i; + + // one over "one minus the grading coefficient" + one_over_one_minus_PBOT = 1 / one_minus_PBOT; + one_over_one_minus_PSTI = 1 / one_minus_PSTI; + one_over_one_minus_PGAT = 1 / one_minus_PGAT; + + // temperature-scaled zero-bias capacitance + cjobot = CJORBOT_i * pow((VBIRBOT_i * vbiinvbot), PBOT_i); + cjosti = CJORSTI_i * pow((VBIRSTI_i * vbiinvsti), PSTI_i); + cjogat = CJORGAT_i * pow((VBIRGAT_i * vbiinvgat), PGAT_i); + + // prefactor in physical part of charge model + qprefbot = cjobot * vbibot * one_over_one_minus_PBOT; + qprefsti = cjosti * vbisti * one_over_one_minus_PSTI; + qprefgat = cjogat * vbigat * one_over_one_minus_PGAT; + + // prefactor in mathematical extension of charge model + qpref2bot = `a * cjobot; + qpref2sti = `a * cjosti; + qpref2gat = `a * cjogat; + + // zero-bias depletion widths at reference temperature, needed in SRH and TAT model + wdepnulrbot = `EPSSI / CJORBOT_i; + wdepnulrsti = XJUNSTI_i * `EPSSI / CJORSTI_i; + wdepnulrgat = XJUNGAT_i * `EPSSI / CJORGAT_i; + + // inverse values of "wdepnulr", used in BBT model + wdepnulrinvbot = 1 / wdepnulrbot; + wdepnulrinvsti = 1 / wdepnulrsti; + wdepnulrinvgat = 1 / wdepnulrgat; + + // inverse values of built-in voltages at reference temperature, needed in SRH and BBT model + VBIRBOTinv = 1 / VBIRBOT_i; + VBIRSTIinv = 1 / VBIRSTI_i; + VBIRGATinv = 1 / VBIRGAT_i; + + // some constants needed in erfc-approximation, needed in TAT model + perfc = (`SQRTPI * `aerfc); + berfc = ((-5 * (`aerfc) + 6 - pow((perfc), -2)) / 3); + cerfc = (1.0 - (`aerfc) - (berfc)); + + // half the bandgap energy, limited to values > phitd, needed in TAT model + deltaEbot = max(0.5 * phigdbot, phitd); + deltaEsti = max(0.5 * phigdsti, phitd); + deltaEgat = max(0.5 * phigdgat, phitd); + + // values of atat, needed in TAT model + atatbot = deltaEbot * phitdinv; + atatsti = deltaEsti * phitdinv; + atatgat = deltaEgat * phitdinv; + + // values of btatpart, needed in TAT model + btatpartbot = sqrt(32 * MEFFTATBOT_i * `MELE * `QELE * (deltaEbot * deltaEbot * deltaEbot)) / (3 * `HBAR); + btatpartsti = sqrt(32 * MEFFTATSTI_i * `MELE * `QELE * (deltaEsti * deltaEsti * deltaEsti)) / (3 * `HBAR); + btatpartgat = sqrt(32 * MEFFTATGAT_i * `MELE * `QELE * (deltaEgat * deltaEgat * deltaEgat)) / (3 * `HBAR); + + // temperature-scaled values of FBBT, needed in BBT model + fbbtbot = FBBTRBOT * (1 + STFBBTBOT * (tkd - tkr)); + fbbtsti = FBBTRSTI * (1 + STFBBTSTI * (tkd - tkr)); + fbbtgat = FBBTRGAT * (1 + STFBBTGAT * (tkd - tkr)); + + // values of fstop, needed in avalanche/breakdown model + fstopbot = 1 / (1 - pow(`alphaav, PBRBOT_i)); + fstopsti = 1 / (1 - pow(`alphaav, PBRSTI_i)); + fstopgat = 1 / (1 - pow(`alphaav, PBRGAT_i)); + + // inverse values of breakdown voltages, needed in avalanche/breakdown model + VBRinvbot = 1 / VBRBOT_i; + VBRinvsti = 1 / VBRSTI_i; + VBRinvgat = 1 / VBRGAT_i; + + // slopes for linear extraploation close to and beyond breakdown, needed in avalanche/breakdown model + slopebot = -(fstopbot * fstopbot * pow(`alphaav, (PBRBOT_i - 1))) * PBRBOT_i * VBRinvbot; + slopesti = -(fstopsti * fstopsti * pow(`alphaav, (PBRSTI_i - 1))) * PBRSTI_i * VBRinvsti; + slopegat = -(fstopgat * fstopgat * pow(`alphaav, (PBRGAT_i - 1))) * PBRGAT_i * VBRinvgat; diff --git a/src/spicelib/devices/adms/psp102/adms3va/JUNCAP200_macrodefs.include b/src/spicelib/devices/adms/psp102/adms3va/JUNCAP200_macrodefs.include new file mode 100644 index 000000000..00d5deed6 --- /dev/null +++ b/src/spicelib/devices/adms/psp102/adms3va/JUNCAP200_macrodefs.include @@ -0,0 +1,285 @@ +//====================================================================================== +//====================================================================================== +// Filename: JUNCAP200_macrodefs.include +//====================================================================================== +//====================================================================================== +// +// (c) Copyright 2007, All Rights Reserved, NXP Semiconductors +// +// +// Version: 102.1 (PSP), 200.2 (JUNCAP), April 2007 (Simkit 2.5) +// +//====================================================================================== +//====================================================================================== +// +// Further information can be found in the file readme.txt +// + +/////////////////////////////////////////// +// +// Macros and constants used in JUNCAP2 +// +/////////////////////////////////////////// + +// Other constants +`define MINTEMP -250 +`define vbilow 0.050 +`define a 2 +`define epsch 0.1 +`define dvbi 0.050 +`define epsav 1E-6 +`define vbrmax 1000 +`define alphaav 0.999 +`define vmaxlarge 1E8 +`define aerfc 0.29214664 +`define twothirds 0.666666666666667 + + +// Clipping values +`define levelnumber 200 +`define AB_cliplow 0 +`define LS_cliplow 0 +`define LG_cliplow 0 +`define MULT_cliplow 0 +`define TRJ_cliplow `MINTEMP +`define IMAX_cliplow 1E-12 +`define CJORBOT_cliplow 1E-12 +`define CJORSTI_cliplow 1E-18 +`define CJORGAT_cliplow 1E-18 +`define VBIR_cliplow `vbilow +`define P_cliplow 0.05 +`define P_cliphigh 0.95 +`define IDSATR_cliplow 0 +`define CSRH_cliplow 0 +`define XJUN_cliplow 1E-9 +`define CTAT_cliplow 0 +`define MEFFTAT_cliplow 0.01 +`define CBBT_cliplow 0 +`define VBR_cliplow 0.1 +`define PBR_cliplow 0.1 + + +///////////////////////////////////////////////////////////////////////////// +// +// Macro definitions. +// +// Note that because at present locally scoped variables +// can only be in named blocks, the intermediate variables +// used in the macros below must be explicitly declared +// as variables. +// +///////////////////////////////////////////////////////////////////////////// + +// Instance parameter dependent initialization + +`define JuncapInitInstance(AB_i, LS_i, LG_i, VMAX, vbimin, vch, vfmin, vbbtlim) \ +if (idsatbot * AB_i > 0) begin \ + vmaxbot = phitd * ln(IMAX_i / (idsatbot * AB_i) + 1); \ +end else begin \ + vmaxbot = `vmaxlarge; \ +end \ +if (idsatsti * LS_i > 0) begin \ + vmaxsti = phitd * ln(IMAX_i / (idsatsti * LS_i) + 1); \ +end else begin \ + vmaxsti = `vmaxlarge; \ +end \ +if (idsatgat * LG_i > 0) begin \ + vmaxgat = phitd * ln(IMAX_i / (idsatgat * LG_i) + 1); \ +end else begin \ + vmaxgat = `vmaxlarge; \ +end \ +VMAX = min(min(vmaxbot, vmaxsti), vmaxgat); \ + \ +/* determination of minimum value of the relevant built-in voltages */ \ +vbibot2 = vbibot; \ +vbisti2 = vbisti; \ +vbigat2 = vbigat; \ +if (AB_i == 0) begin vbibot2 = vbisti + vbigat; end \ +if (LS_i == 0) begin vbisti2 = vbibot + vbigat; end \ +if (LG_i == 0) begin vbigat2 = vbibot + vbisti; end \ +vbimin = min(min(vbibot2, vbisti2), vbigat2); \ +vch = vbimin * `epsch; \ +if (vbimin == vbibot) begin vfmin = vbibot * (1 - (pow(`a, (-1.0 / PBOT_i)))); end \ +if (vbimin == vbisti) begin vfmin = vbisti * (1 - (pow(`a, (-1.0 / PSTI_i)))); end \ +if (vbimin == vbigat) begin vfmin = vbigat * (1 - (pow(`a, (-1.0 / PGAT_i)))); end \ + \ +/* determination of limiting value of conditioned voltage for BBT calculation */ \ +vbibot2r = VBIRBOT_i; \ +vbisti2r = VBIRSTI_i; \ +vbigat2r = VBIRGAT_i; \ +if (AB_i == 0) begin vbibot2r = VBIRSTI_i + VBIRGAT_i; end \ +if (LS_i == 0) begin vbisti2r = VBIRBOT_i + VBIRGAT_i; end \ +if (LG_i == 0) begin vbigat2r = VBIRBOT_i + VBIRSTI_i; end \ +vbbtlim = min(min(vbibot2r, vbisti2r), vbigat2r) - `dvbi; \ + + +// Special power-functions + +`define mypower(x,power,result) \ +if (power == 0.5) begin \ + result = sqrt(x); \ +end else begin \ + result = pow(x, power); \ +end + +`define mypower2(x,power,result) \ +if (power == -1) begin \ + result = 1 / (x); \ +end else begin \ + result = pow(x, power); \ +end + +`define mypower3(x,power,result) \ +if (power == 4) begin \ + result = (x) * (x) * (x) * (x); \ +end else begin \ + result = pow(x, power); \ +end + + +// Smoothing functions + +`define hypfunction2(x,x0,eps,hyp2) \ +hyp2 = 0.5 * ((x) + (x0) - sqrt(((x) - (x0)) * ((x) - (x0)) + 4 * (eps) * (eps))); + +`define hypfunction5(x,x0,eps,hyp5) \ +h1 = 4.0 * (eps) * (eps); \ +h2 = (eps) / (x0); \ +h2d = (x) + (eps) * h2; \ +h3 = (x0) + h2d; \ +h4 = (x0) - h2d; \ +h5 = sqrt(h4 * h4 + h1); \ +hyp5 = 2.0 * ((x) * (x0) / (h3 + h5)); + + +// A special function used to calculate TAT-currents, +// including an approximation of the erfc-function + +`define calcerfcexpmtat(y,m,result) \ +ysq = y * y; \ +if (y > 0) begin \ + terfc = 1 / (1 + perfc * y); \ +end else begin \ + terfc = 1 / (1 - perfc * y); \ +end \ +`expl_low(-ysq + m, tmp) \ +erfcpos = (`aerfc * terfc + berfc * (terfc * terfc) + cerfc * (terfc * terfc * terfc)) * tmp; \ +if (y > 0) begin \ + result = erfcpos; \ +end else begin\ + `expl_low(m, tmp) \ + result = 2 * tmp - erfcpos; \ +end + + +// This is the main function of the JUNCAP2-model. It returns the current and charge +// for a single diode + +`define juncapfunction(qpref,qpref2,vbiinv,one_minus_P,idsat,CSRH,CTAT,vbi,wdepnulr,VBIRinv,P,ftd,btatpart,atat,one_over_one_minus_P,CBBT,VBIR,wdepnulrinv,fbbt,VBR,VBRinv,PBR,fstop,slope,Ijprime,Qjprime) \ +`mypower((1 - vj * vbiinv), one_minus_P, tmp) \ +Qjprime = qpref * (1 - tmp) + qpref2 * (VAK - vj); \ +id = idsat * idmult; \ +if ((CSRH == 0) && (CTAT == 0)) begin \ + isrh = 0; \ +end else begin \ + vbi_minus_vjsrh = vbi-vjsrh; \ + wsrhstep = 1 - sqrt(1 - two_psistar / vbi_minus_vjsrh); \ + if (P == 0.5) begin \ + dwsrh = 0; \ + end else begin \ + dwsrh = ((wsrhstep * wsrhstep * ln(wsrhstep) / (1 - wsrhstep)) + wsrhstep) * (1 - 2 * P); \ + end \ + wsrh = wsrhstep + dwsrh; \ + `mypower(vbi_minus_vjsrh * VBIRinv, P, tmp) \ + wdep = wdepnulr * tmp; \ + asrh = ftd * ((zinv - 1) * wdep); \ + isrh = CSRH * (asrh * wsrh); \ +end \ +if (CTAT == 0) begin \ + itat = 0; \ +end else begin \ + btat = btatpart * ((wdep * one_minus_P) / vbi_minus_vjsrh); \ + twoatatoverthreebtat = (`twothirds * atat) / btat; \ + umaxbeforelimiting = twoatatoverthreebtat * twoatatoverthreebtat; \ + umax = sqrt(umaxbeforelimiting * umaxbeforelimiting / (umaxbeforelimiting * umaxbeforelimiting + 1)); \ + sqrtumax = sqrt(abs(umax)); \ + umaxpoweronepointfive = umax * sqrtumax; \ + `mypower2((1 + btat * umaxpoweronepointfive), (-P * one_over_one_minus_P), wgamma) \ + wtat = wsrh * wgamma / (wsrh + wgamma); \ + ktat = sqrt(0.375 * (btat / sqrtumax)); \ + ltat = 2 * (twoatatoverthreebtat * sqrtumax) - umax; \ + mtat = atat * twoatatoverthreebtat * sqrtumax - atat * umax + 0.5 * (btat * umaxpoweronepointfive); \ + xerfc = (ltat - 1) * ktat; \ + `calcerfcexpmtat(xerfc, mtat, erfctimesexpmtat) \ + gammamax = `SQRTPI * 0.5 * (atat * erfctimesexpmtat / ktat); \ + itat = CTAT * (asrh * gammamax * wtat); \ +end \ +if (CBBT == 0) begin \ + ibbt = 0; \ +end else begin \ + `mypower(((VBIR - vbbt) * VBIRinv), P, tmp) \ + Fmaxr = one_over_one_minus_P * ((VBIR - vbbt) * wdepnulrinv / tmp); \ + `expl(-fbbt / Fmaxr, tmp) \ + ibbt = CBBT * (VAK * Fmaxr * Fmaxr * tmp); \ +end \ +if (VBR > `vbrmax) begin \ + fbreakdown = 1; \ +end else begin \ + if (vav > -`alphaav * VBR) begin \ + `mypower3(abs(vav * VBRinv), PBR, tmp) \ + fbreakdown = 1 / (1 - tmp); \ + end else begin \ + fbreakdown = fstop + (vav + `alphaav * VBR) * slope; \ + end \ +end \ +Ijprime = (id + isrh + itat + ibbt) * fbreakdown; + + +// The following code is written as a macro because the naming of the instance parameters is +// different for JUNCAP2 stand-alone and JUNCAP2-in-PSP: AB, LS, LG for JUNCAP2 stand-alone, +// ABSOURCE, LSSOURCE, LGSOURCE for source junction in PSP and ABDRAIN, LSDRAIN, LGDRAIN for +// drain junction in PSP + +`define juncapcommon(AB_i,LS_i,LG_i,ijunbot,qjunbot,ijunsti,qjunsti,ijungat,qjungat) \ +vbbt = 0.0; \ +two_psistar = 0.0; \ +if ( !( ((AB_i) == 0) && ((LS_i) == 0) && ((LG_i) == 0) ) ) begin \ + `hypfunction5(VAK, vfmin, vch, vj) \ + if (VAK < VMAX) begin \ + `expl(0.5 * (VAK * phitdinv), zinv) \ + idmult = zinv * zinv; \ + end else begin \ + `expl(VMAX * phitdinv, exp_VMAX_over_phitd) \ + idmult = (1 + (VAK - VMAX) * phitdinv) * exp_VMAX_over_phitd; \ + zinv = sqrt(idmult); \ + end \ + idmult = idmult - 1.0; \ + z = 1 / zinv; \ + if (VAK > 0) begin \ + two_psistar = 2.0 * (phitd * ln(2.0 + z + sqrt((z + 1.0) * (z + 3.0)))); \ + end else begin \ + two_psistar = -VAK + 2.0 * (phitd * ln(2 * zinv + 1 + sqrt((1 + zinv) * (1 + 3 * zinv)))); \ + end \ + vjlim = vbimin - two_psistar; \ + `hypfunction2(VAK, vjlim, phitd, vjsrh) \ + `hypfunction2(VAK, vbbtlim, phitr, vbbt) \ + `hypfunction2(VAK, 0, `epsav, vav) \ +end \ +if ((AB_i) == 0) begin \ + ijunbot = 0; \ + qjunbot = 0; \ +end else begin \ + `juncapfunction(qprefbot,qpref2bot,vbiinvbot,one_minus_PBOT,idsatbot,CSRHBOT_i,CTATBOT_i,vbibot,wdepnulrbot,VBIRBOTinv,PBOT_i,ftdbot,btatpartbot,atatbot,one_over_one_minus_PBOT,CBBTBOT_i,VBIRBOT_i,wdepnulrinvbot,fbbtbot,VBRBOT_i,VBRinvbot,PBRBOT_i,fstopbot,slopebot,ijunbot, qjunbot) \ +end \ +if ((LS_i) == 0) begin \ + ijunsti = 0; \ + qjunsti = 0; \ +end else begin \ + `juncapfunction(qprefsti,qpref2sti,vbiinvsti,one_minus_PSTI,idsatsti,CSRHSTI_i,CTATSTI_i,vbisti,wdepnulrsti,VBIRSTIinv,PSTI_i,ftdsti,btatpartsti,atatsti,one_over_one_minus_PSTI,CBBTSTI_i,VBIRSTI_i,wdepnulrinvsti,fbbtsti,VBRSTI_i,VBRinvsti,PBRSTI_i,fstopsti,slopesti,ijunsti, qjunsti) \ +end \ +if ((LG_i) == 0) begin \ + ijungat = 0; \ + qjungat = 0; \ +end else begin \ + `juncapfunction(qprefgat,qpref2gat,vbiinvgat,one_minus_PGAT,idsatgat,CSRHGAT_i,CTATGAT_i,vbigat,wdepnulrgat,VBIRGATinv,PGAT_i,ftdgat,btatpartgat,atatgat,one_over_one_minus_PGAT,CBBTGAT_i,VBIRGAT_i,wdepnulrinvgat,fbbtgat,VBRGAT_i,VBRinvgat,PBRGAT_i,fstopgat,slopegat,ijungat, qjungat) \ +end diff --git a/src/spicelib/devices/adms/psp102/adms3va/JUNCAP200_parlist.include b/src/spicelib/devices/adms/psp102/adms3va/JUNCAP200_parlist.include new file mode 100644 index 000000000..5974b65b4 --- /dev/null +++ b/src/spicelib/devices/adms/psp102/adms3va/JUNCAP200_parlist.include @@ -0,0 +1,65 @@ +//====================================================================================== +//====================================================================================== +// Filename: JUNCAP200_parlist.include +//====================================================================================== +//====================================================================================== +// +// (c) Copyright 2007, All Rights Reserved, NXP Semiconductors +// +// +// Version: 102.1 (PSP), 200.2 (JUNCAP), April 2007 (Simkit 2.5) +// +//====================================================================================== +//====================================================================================== +// +// Further information can be found in the file readme.txt +// + + ////////////////////////////////////////// + // + // JUNCAP2 - Reduced parameterlist + // + ////////////////////////////////////////// + + (*info="Maximum current up to which forward current behaves exponentially", unit="A" *) parameter real IMAX = 1000 `from(`IMAX_cliplow ,inf ); + (*info="Zero-bias capacitance per unit-of-area of bottom component", unit="Fm^-2" *) parameter real CJORBOT = 1E-3 `from(`CJORBOT_cliplow ,inf ); + (*info="Zero-bias capacitance per unit-of-length of STI-edge component", unit="Fm^-1" *) parameter real CJORSTI = 1E-9 `from(`CJORSTI_cliplow ,inf ); + (*info="Zero-bias capacitance per unit-of-length of gate-edge component", unit="Fm^-1" *) parameter real CJORGAT = 1E-9 `from(`CJORGAT_cliplow ,inf ); + (*info="Built-in voltage at the reference temperature of bottom component", unit="V" *) parameter real VBIRBOT = 1 `from(`VBIR_cliplow ,inf ); + (*info="Built-in voltage at the reference temperature of STI-edge component", unit="V" *) parameter real VBIRSTI = 1 `from(`VBIR_cliplow ,inf ); + (*info="Built-in voltage at the reference temperature of gate-edge component", unit="V" *) parameter real VBIRGAT = 1 `from(`VBIR_cliplow ,inf ); + (*info="Grading coefficient of bottom component", unit="" *) parameter real PBOT = 0.5 `from(`P_cliplow ,`P_cliphigh ); + (*info="Grading coefficient of STI-edge component", unit="" *) parameter real PSTI = 0.5 `from(`P_cliplow ,`P_cliphigh ); + (*info="Grading coefficient of gate-edge component", unit="" *) parameter real PGAT = 0.5 `from(`P_cliplow ,`P_cliphigh ); + (*info="Zero-temperature bandgap voltage of bottom component", unit="V" *) parameter real PHIGBOT = 1.16 ; + (*info="Zero-temperature bandgap voltage of STI-edge component", unit="V" *) parameter real PHIGSTI = 1.16 ; + (*info="Zero-temperature bandgap voltage of gate-edge component", unit="V" *) parameter real PHIGGAT = 1.16 ; + (*info="Saturation current density at the reference temperature of bottom component", unit="Am^-2" *) parameter real IDSATRBOT = 1E-12 `from(`IDSATR_cliplow ,inf ); + (*info="Saturation current density at the reference temperature of STI-edge component", unit="Am^-1" *) parameter real IDSATRSTI = 1E-18 `from(`IDSATR_cliplow ,inf ); + (*info="Saturation current density at the reference temperature of gate-edge component", unit="Am^-1" *) parameter real IDSATRGAT = 1E-18 `from(`IDSATR_cliplow ,inf ); + (*info="Shockley-Read-Hall prefactor of bottom component", unit="Am^-3" *) parameter real CSRHBOT = 1E2 `from(`CSRH_cliplow ,inf ); + (*info="Shockley-Read-Hall prefactor of STI-edge component", unit="Am^-2" *) parameter real CSRHSTI = 1E-4 `from(`CSRH_cliplow ,inf ); + (*info="Shockley-Read-Hall prefactor of gate-edge component", unit="Am^-2" *) parameter real CSRHGAT = 1E-4 `from(`CSRH_cliplow ,inf ); + (*info="Junction depth of STI-edge component", unit="m" *) parameter real XJUNSTI = 100E-9 `from(`XJUN_cliplow ,inf ); + (*info="Junction depth of gate-edge component", unit="m" *) parameter real XJUNGAT = 100E-9 `from(`XJUN_cliplow ,inf ); + (*info="Trap-assisted tunneling prefactor of bottom component", unit="Am^-3" *) parameter real CTATBOT = 1E2 `from(`CTAT_cliplow ,inf ); + (*info="Trap-assisted tunneling prefactor of STI-edge component", unit="Am^-2" *) parameter real CTATSTI = 1E-4 `from(`CTAT_cliplow ,inf ); + (*info="Trap-assisted tunneling prefactor of gate-edge component", unit="Am^-2" *) parameter real CTATGAT = 1E-4 `from(`CTAT_cliplow ,inf ); + (*info="Effective mass (in units of m0) for trap-assisted tunneling of bottom component", unit="" *) parameter real MEFFTATBOT = 0.25 `from(`MEFFTAT_cliplow ,inf ); + (*info="Effective mass (in units of m0) for trap-assisted tunneling of STI-edge component", unit="" *) parameter real MEFFTATSTI = 0.25 `from(`MEFFTAT_cliplow ,inf ); + (*info="Effective mass (in units of m0) for trap-assisted tunneling of gate-edge component", unit="" *) parameter real MEFFTATGAT = 0.25 `from(`MEFFTAT_cliplow ,inf ); + (*info="Band-to-band tunneling prefactor of bottom component", unit="AV^-3" *) parameter real CBBTBOT = 1E-12 `from(`CBBT_cliplow ,inf ); + (*info="Band-to-band tunneling prefactor of STI-edge component", unit="AV^-3m" *) parameter real CBBTSTI = 1E-18 `from(`CBBT_cliplow ,inf ); + (*info="Band-to-band tunneling prefactor of gate-edge component", unit="AV^-3m" *) parameter real CBBTGAT = 1E-18 `from(`CBBT_cliplow ,inf ); + (*info="Normalization field at the reference temperature for band-to-band tunneling of bottom component", unit="Vm^-1" *) parameter real FBBTRBOT = 1E9 ; + (*info="Normalization field at the reference temperature for band-to-band tunneling of STI-edge component", unit="Vm^-1" *) parameter real FBBTRSTI = 1E9 ; + (*info="Normalization field at the reference temperature for band-to-band tunneling of gate-edge component", unit="Vm^-1" *) parameter real FBBTRGAT = 1E9 ; + (*info="Temperature scaling parameter for band-to-band tunneling of bottom component", unit="K^-1" *) parameter real STFBBTBOT = -1E-3 ; + (*info="Temperature scaling parameter for band-to-band tunneling of STI-edge component", unit="K^-1" *) parameter real STFBBTSTI = -1E-3 ; + (*info="Temperature scaling parameter for band-to-band tunneling of gate-edge component", unit="K^-1" *) parameter real STFBBTGAT = -1E-3 ; + (*info="Breakdown voltage of bottom component", unit="V" *) parameter real VBRBOT = 10 `from(`VBR_cliplow ,inf ); + (*info="Breakdown voltage of STI-edge component", unit="V" *) parameter real VBRSTI = 10 `from(`VBR_cliplow ,inf ); + (*info="Breakdown voltage of gate-edge component", unit="V" *) parameter real VBRGAT = 10 `from(`VBR_cliplow ,inf ); + (*info="Breakdown onset tuning parameter of bottom component", unit="V" *) parameter real PBRBOT = 4 `from(`PBR_cliplow ,inf ); + (*info="Breakdown onset tuning parameter of STI-edge component", unit="V" *) parameter real PBRSTI = 4 `from(`PBR_cliplow ,inf ); + (*info="Breakdown onset tuning parameter of gate-edge component", unit="V" *) parameter real PBRGAT = 4 `from(`PBR_cliplow ,inf ); diff --git a/src/spicelib/devices/adms/psp102/adms3va/JUNCAP200_varlist.include b/src/spicelib/devices/adms/psp102/adms3va/JUNCAP200_varlist.include new file mode 100644 index 000000000..cb4c5a680 --- /dev/null +++ b/src/spicelib/devices/adms/psp102/adms3va/JUNCAP200_varlist.include @@ -0,0 +1,67 @@ +//====================================================================================== +//====================================================================================== +// Filename: JUNCAP200_varlist.include +//====================================================================================== +//====================================================================================== +// +// (c) Copyright 2007, All Rights Reserved, NXP Semiconductors +// +// +// Version: 102.1 (PSP), 200.2 (JUNCAP), April 2007 (Simkit 2.5) +// +//====================================================================================== +//====================================================================================== +// +// Further information can be found in the file readme.txt +// + + + // declaration of variables needed in macro "calcerfcexpmtat" + real ysq, terfc, erfcpos; + + // declaration of variables needed in hypfunction 5 + real h1, h2, h2d, h3, h4, h5; + + // declaration of variables used within macro "juncapfunction" + real tmp, id; + real isrh, vbi_minus_vjsrh, wsrhstep, dwsrh, wsrh, wdep, asrh; + real itat, btat, twoatatoverthreebtat, umaxbeforelimiting, umax, sqrtumax, umaxpoweronepointfive; + real wgamma, wtat, ktat, ltat, mtat, xerfc, erfctimesexpmtat, gammamax; + real ibbt, Fmaxr; + real fbreakdown; + + // declaration of clipped parameters + real TRJ_i, IMAX_i; + real CJORBOT_i, CJORSTI_i, CJORGAT_i, VBIRBOT_i, VBIRSTI_i, VBIRGAT_i; + real PBOT_i, PSTI_i, PGAT_i; + real IDSATRBOT_i, IDSATRSTI_i, IDSATRGAT_i, XJUNSTI_i, XJUNGAT_i; + real CSRHBOT_i, CSRHSTI_i, CSRHGAT_i, CTATBOT_i, CTATSTI_i, CTATGAT_i; + real MEFFTATBOT_i, MEFFTATSTI_i, MEFFTATGAT_i; + real CBBTBOT_i, CBBTSTI_i, CBBTGAT_i; + real VBRBOT_i, VBRSTI_i, VBRGAT_i, PBRBOT_i, PBRSTI_i, PBRGAT_i; + + // declaration of variables calculated outside macro "juncapfunction", voltage-independent part + real tkr, tkd, auxt, KBOL_over_QELE, phitr, phitrinv, phitd, phitdinv; + real deltaphigr, phigrbot, phigrsti, phigrgat, deltaphigd, phigdbot, phigdsti, phigdgat; + real ftdbot, ftdsti, ftdgat, idsatbot, idsatsti, idsatgat, exp_VMAX_over_phitd; + real ubibot, ubisti, ubigat, vbibot, vbisti, vbigat; + real vbibot2, vbisti2, vbigat2, vbibot2r, vbisti2r, vbigat2r; + real vbiinvbot, vbiinvsti, vbiinvgat; + real one_minus_PBOT, one_minus_PSTI, one_minus_PGAT; + real one_over_one_minus_PBOT, one_over_one_minus_PSTI, one_over_one_minus_PGAT; + real cjobot, cjosti, cjogat, qprefbot, qprefsti, qprefgat; + real vbimin, vch, vfmin, vbbtlim; + real qpref2bot, qpref2sti, qpref2gat; + real wdepnulrbot, wdepnulrsti, wdepnulrgat, wdepnulrinvbot, wdepnulrinvsti, wdepnulrinvgat; + real VBIRBOTinv, VBIRSTIinv, VBIRGATinv; + real perfc, berfc, cerfc; + real deltaEbot, deltaEsti, deltaEgat, atatbot, atatsti, atatgat; + real btatpartbot, btatpartsti, btatpartgat; + real fbbtbot, fbbtsti, fbbtgat; + real fstopbot, fstopsti, fstopgat, VBRinvbot, VBRinvsti, VBRinvgat; + real slopebot, slopesti, slopegat; + real vmaxbot, vmaxsti, vmaxgat, VMAX; + + // declaration of variables calculated outside macro "juncapfunction", voltage-dependent part + real VAK, idmult, vj, z, zinv, two_psistar, vjlim, vjsrh, vbbt, vav; + diff --git a/src/spicelib/devices/adms/psp102/adms3va/PSP102_ChargesNQS.include b/src/spicelib/devices/adms/psp102/adms3va/PSP102_ChargesNQS.include new file mode 100644 index 000000000..6ebe651fd --- /dev/null +++ b/src/spicelib/devices/adms/psp102/adms3va/PSP102_ChargesNQS.include @@ -0,0 +1,303 @@ +//====================================================================================== +//====================================================================================== +// Filename: PSP102_ChargesNQS.include +//====================================================================================== +//====================================================================================== +// +// (c) Copyright 2007, All Rights Reserved, NXP Semiconductors +// +// +// Version: 102.1, April 2007 (Simkit 2.5) +// +//====================================================================================== +//====================================================================================== +// +// Further information can be found in the file readme.txt +// + + + /////////////////////////////////////////////// + // + // Calculate NQS-charge contributions + // + /////////////////////////////////////////////// + + Qp1 = vnorm * V(SPLINE1); + Qp2 = vnorm * V(SPLINE2); + Qp3 = vnorm * V(SPLINE3); + Qp4 = vnorm * V(SPLINE4); + Qp5 = vnorm * V(SPLINE5); + Qp6 = vnorm * V(SPLINE6); + Qp7 = vnorm * V(SPLINE7); + Qp8 = vnorm * V(SPLINE8); + Qp9 = vnorm * V(SPLINE9); + + Tnorm = 0.0; + + if (SWNQS_i != 0) begin + // Dimension and mobility information is included in Tnorm + Tnorm = MUNQS_i * phit1 * BET_i / (COX_qm * Gmob_dL); + thesat2 = thesat1 * thesat1 * phit1 * phit1; + + if (SWNQS_i == 1) begin + dQy = QpN - Qp0; + d2Qy = 6.0 * (Qp0 + QpN) - 12.0 * Qp1; + end else if (SWNQS_i == 2) begin + dQy = (-7.0 * Qp0 - 3.0 * Qp1 + 12.0 * Qp2 - 2.0 * QpN) / 5.0; + d2Qy = -18.0 / 5.0 * (-4.0 * Qp0 + 9.0 * Qp1 - 6.0 * Qp2 + QpN); + end else if (SWNQS_i == 3) begin + dQy = (-13.0 * Qp0 - 6.0 * Qp1 + 24.0 * Qp2 - 6.0 * Qp3 + QpN) / 7.0; + d2Qy = (180.0 * Qp0 - 408.0 * Qp1 + 288.0 * Qp2 - 72.0 * Qp3 + 12.0 * QpN) / 7.0; + end else if (SWNQS_i == 5) begin + dQy = (-181.0 * Qp0 - 84.0 * Qp1 + 24.0 * Qp4 - 6.0 * Qp5 - 90.0 * Qp3 + QpN + + 336.0 * Qp2) / 65.0; + d2Qy = (432.0 * Qp4 - 108.0 * Qp5 - 1620.0 * Qp3 + 18.0 * QpN + 3762.0 * Qp0 + - 8532.0 * Qp1 + 6048.0 * Qp2) / 65.0; + end else if (SWNQS_i == 9) begin + dQy = (1680.0 * Qp6 + 23400.0 * Qp4 + 5.0 * QpN - 87330.0 * Qp3 + 120.0 * Qp8 + - 450.0 * Qp7 - 81480.0 * Qp1 + 325920.0 * Qp2 + -175565.0 * Qp0 - 30.0 * Qp9) / 37829.0 - 30.0 / 181.0 * Qp5; + d2Qy = (-13500.0 * Qp7 + 702000.0 * Qp4 - 2619900 * Qp3 - 13793100.0 * Qp1 + + 9777600.0 * Qp2 + 6081750.0 * Qp0 + 150.0 * QpN + 3600.0 * Qp8 + - 900.0 * Qp9 + 50400 * Qp6) / 37829.0 - 900.0 / 181.0 * Qp5; + end else begin + dQy = 0; + d2Qy = 0; + end + `fq(Qp1, xg, dQy, d2Qy, fk1) + end + + if (SWNQS_i >= 2) begin + if (SWNQS_i == 2) begin + dQy = (2.0 * Qp0 - 12.0 * Qp1 + 3.0 * Qp2 + 7.0 * QpN) / 5.0; + d2Qy = -18.0 / 5.0 * (-4.0 * QpN + 9.0 * Qp2 - 6.0 * Qp1 + Qp0); + end else if (SWNQS_i == 3) begin + dQy = 0.5 * Qp0 - 3.0 * Qp1 + 3.0 * Qp3 - 0.5 * QpN; + d2Qy = (-48.0 * Qp0 + 288.0 * Qp1 - 480.0 * Qp2 + 288.0 * Qp3 - 48.0 * QpN) / 7.0; + end else if (SWNQS_i == 5) begin + dQy = (-291.0 * Qp1 - 6.0 * Qp2 - 84.0 * Qp4 + 21.0 * Qp5) / 65.0 + + (630.0 * Qp3 - 7.0 * QpN + 97.0 * Qp0) / 130.0; + d2Qy = (-1728.0 * Qp4 + 432.0 * Qp5 + 6480.0 * Qp3 - 72.0 * QpN - 1008 * Qp0 + + 6048 * Qp1 - 10152 * Qp2) / 65.0; + end else if (SWNQS_i == 9) begin + dQy = (-5880.0 * Qp6 - 81900.0 * Qp4 + 305655.0 * Qp3 - 420.0 * Qp8 + + 105.0 * Qp9 - 282255.0 * Qp1 + 1575.0 * Qp7 - 5850.0 * Qp2) / 37829.0 + + 105.0 / 181.0 * Qp5 + (94085.0 * Qp0 - 35.0 * QpN) / 75658.0; + d2Qy = (9777600.0 * Qp1 + 54000.0 * Qp7 - 2808000.0 * Qp4 + 10479600.0 * Qp3 + - 16413000.0 * Qp2 - 1629600.0 * Qp0 - 600.0 * QpN - 14400.0 * Qp8 + + 3600.0 * Qp9 - 201600.0 * Qp6) / 37829.0 + 3600.0 * Qp5 / 181.0; + end else begin + dQy = 0; + d2Qy = 0; + end + `fq(Qp2, xg, dQy, d2Qy, fk2) + end + + if (SWNQS_i >= 3) begin + if (SWNQS_i == 3) begin + dQy = (13.0 * QpN + 6.0 * Qp3 - 24.0 * Qp2 + 6.0 * Qp1 - Qp0) / 7.0; + d2Qy = (180.0 * QpN - 408.0 * Qp3 + 288.0 * Qp2 - 72.0 * Qp1 + 12.0 * Qp0) / 7.0; + end else if (SWNQS_i == 5) begin + dQy = (QpN - 6.0 * Qp5 + 24.0 * Qp4 - 24.0 * Qp2 + 6.0 * Qp1 - Qp0) / 5.0; + d2Qy = (1296.0 * (Qp4 + Qp2) - 324.0 * (Qp5 + Qp1) - 2052.0 * Qp3 + + 54.0 * (QpN + Qp0)) / 13.0; + end else if (SWNQS_i == 9) begin + dQy = (21840.0 * Qp6 + 304200.0 * Qp4 + 65.0 * QpN - 420.0 * Qp3 + 1560.0 * Qp8 + - 12605.0 * Qp0-390.0 * Qp9 + 75630.0 * Qp1 - 5850.0 * Qp7 + - 302520.0 * Qp2) / 37829.0 - 390.0 / 181.0 * Qp5; + d2Qy = (-2619900.0 * Qp1 - 202500.0 * Qp7 + 10530000.0 * Qp4 - 16601100.0 * Qp3 + + 10479600.0 * Qp2 + 436650.0 * Qp0 + 2250.0 * QpN + 54000.0 * Qp8 + - 13500.0 * Qp9 + 756000.0 * Qp6) / 37829.0 - 13500.0 * Qp5 / 181.0; + end else begin + dQy = 0; + d2Qy = 0; + end + `fq(Qp3, xg, dQy, d2Qy, fk3) + end + + if (SWNQS_i >= 4) begin + if (SWNQS_i == 5) begin + dQy = (-630.0 * Qp3 + 12.0 * Qp4 + 582.0 * Qp5 - 97.0 * QpN + 7.0 * Qp0 + - 42.0 * Qp1 + 168.0 * Qp2)/130.0; + d2Qy = (-10152.0 * Qp4 + 6048.0 * Qp5 + 6480.0 * Qp3 - 1008.0 * QpN + - 72.0 * Qp0 + 432.0 * Qp1 - 1728.0 * Qp2) / 65.0; + end + else if (SWNQS_i == 9) begin + dQy = (-81480.0 * Qp6 - 30.0 * Qp4 - 303975.0 * Qp3 - 5820.0 * Qp8 + + 1455.0 * Qp9 - 20265.0 * Qp1 + 21825.0 * Qp7 + 81060.0 * Qp2) / 37829.0 + - 485.0 / 75658.0 * QpN + 1455.0 * Qp5 / 181.0 + 6755.0 * Qp0 / 75658.0; + d2Qy = (702000.0 * Qp1 + 756000.0 * Qp7 - 16614600.0 * Qp4 + 10530000.0 * Qp3 + - 2808000.0 * Qp2 - 117000.0 * Qp0 - 8400.0 * QpN - 201600.0 * Qp8 + + 50400.0 * Qp9 - 2822400.0 * Qp6) / 37829.0 + 50400.0 * Qp5 / 181.0; + end else begin + dQy = 0; + d2Qy = 0; + end + `fq(Qp4, xg, dQy, d2Qy, fk4) + end + + if (SWNQS_i >= 5) begin + if (SWNQS_i == 5) begin + dQy = (-336.0 * Qp4 + 84.0 * Qp5 + 90.0 * Qp3 + 181.0 * QpN - Qp0 + 6.0 * Qp1 + - 24.0 * Qp2) / 65.0; + d2Qy = (18.0 * Qp0 + 3762.0 * QpN + 6048.0 * Qp4 + 432.0 * Qp2 - 1620.0 * Qp3 + - 108.0 * Qp1 - 8532.0 * Qp5) / 65.0; + end else if (SWNQS_i == 9) begin + dQy = (1680.0 * (Qp6 - Qp4) + 5.0 * (QpN - Qp0) + 450.0 * (Qp3 - Qp7) + + 120.0 * (Qp8 - Qp2) - 30.0 * (Qp9 - Qp1)) / 209.0; + d2Qy = (-900.0 * (Qp1 + Qp9) - 13500.0 * (Qp7 + Qp3) - 79500.0 * Qp5 + + 50400.0 * (Qp4 + Qp6) + 3600.0 * (Qp2 + Qp8) + 150.0 * (Qp0 + QpN)) / 181.0; + end else begin + dQy = 0; + d2Qy = 0; + end + `fq(Qp5, xg, dQy, d2Qy, fk5) + end + + if (SWNQS_i >= 6) begin + if (SWNQS_i == 9) begin + dQy = (30.0 * Qp6 + 81480.0 * Qp4 - 21825.0 * Qp3 - 81060.0 * Qp8 + 20265.0 * Qp9 + - 1455.0 * Qp1 + 303975.0 * Qp7 + 5820.0 * Qp2) / 37829.0 + -(6755.0 * QpN - 485.0 * Qp0) / 75658.0 - 1455.0 / 181.0 * Qp5; + d2Qy = (50400.0 * Qp1 + 10530000.0 * Qp7 - 2822400.0 * Qp4 + 756000.0 * Qp3 + - 201600.0 * Qp2 - 8400.0 * Qp0 - 117000.0 * QpN - 2808000.0 * Qp8 + + 702000.0 * Qp9 - 16614600.0 * Qp6) / 37829.0 + 50400.0 * Qp5 / 181.0; + end else begin + dQy = 0; + d2Qy = 0; + end + `fq(Qp6, xg, dQy, d2Qy, fk6) + end + + if (SWNQS_i >= 7) begin + if (SWNQS_i == 9) begin + dQy = (-304200.0 * Qp6 - 21840.0 * Qp4 + 12605.0 * QpN + 5850.0 * Qp3 + + 302520.0 * Qp8 - 65.0 * Qp0 - 75630.0 * Qp9 + 390.0 * Qp1 + 420.0 * Qp7 + - 1560.0 * Qp2) / 37829.0 + 390.0 / 181.0 * Qp5; + d2Qy = (-13500.0 * Qp1 - 16601100.0 * Qp7 + 756000.0 * Qp4 - 202500.0 * Qp3 + + 54000.0 * Qp2 + 2250.0 * Qp0 + 436650.0 * QpN + 10479600.0 * Qp8 + - 2619900.0 * Qp9 + 10530000.0 * Qp6) / 37829.0 - 13500.0 * Qp5 / 181.0; + end else begin + dQy = 0; + d2Qy = 0; + end + `fq(Qp7, xg, dQy, d2Qy, fk7) + end + + if (SWNQS_i >= 8) begin + if (SWNQS_i == 9) begin + dQy = (81900.0 * Qp6 + 5880.0 * Qp4 - 1575.0 * Qp3 + 5850.0 * Qp8 + 282255.0 * Qp9 + - 105.0 * Qp1 - 305655.0 * Qp7 + 420.0 * Qp2) / 37829.0 + (35.0 * Qp0 + - 94085.0 * QpN) / 75658.0 - 105.0 / 181.0 * Qp5; + d2Qy = (3600.0 * Qp1 + 10479600.0 * Qp7 - 201600.0 * Qp4 + 54000.0 * Qp3 + - 14400.0 * Qp2 - 600.0 * Qp0 - 1629600.0 * QpN - 16413000.0 * Qp8 + + 9777600.0 * Qp9 - 2808000.0 * Qp6) / 37829.0 + 3600.0 * Qp5 / 181.0; + end else begin + dQy = 0; + d2Qy = 0; + end + `fq(Qp8, xg, dQy, d2Qy, fk8) + end + + if (SWNQS_i >= 9) begin + if (SWNQS_i == 9) begin + dQy = (-23400.0 * Qp6 - 1680.0 * Qp4 + 175565.0 * QpN + 450.0 * Qp3 + - 325920.0 * Qp8 - 5.0 * Qp0 + 81480.0 * Qp9 + 30.0 * Qp1 + + 87330.0 * Qp7 - 120.0 * Qp2) / 37829.0 + 30.0 * Qp5 / 181.0; + d2Qy = (-900.0 * Qp1 - 2619900.0 * Qp7 + 50400.0 * Qp4 - 13500.0 * Qp3 + + 3600.0 * Qp2 + 150.0 * Qp0 + 6081750.0 * QpN + 9777600.0 * Qp8 + - 13793100.0 * Qp9 + 702000.0 * Qp6) / 37829.0 - 900.0 * Qp5 / 181.0; + end else begin + dQy = 0; + d2Qy = 0; + end + `fq(Qp9, xg, dQy, d2Qy, fk9) + end + + //-------------------------------------------------------------------- + + // Terminal charges for NQS + if (SWNQS_i != 0) begin + if (SWNQS_i == 1) begin + QS_NQS = (17.0 * Qp0 + 30.0 * Qp1 + QpN) / 96.0; + QD_NQS = (Qp0 + 30.0 * Qp1 + 17.0 * QpN) / 96.0; + `QiToPhi(Qp1,xg, temp1) + QG_NQS = xg - (x_sp + 4.0 * temp1 + x_dp) * `oneSixth; + end else if (SWNQS_i == 2) begin + QS_NQS = (11.0 * Qp0 + 24.0 * Qp1 + 9.0 * Qp2 + QpN) / 90.0; + QD_NQS = (11.0 * QpN + 24.0 * Qp2 + 9.0 * Qp1 + Qp0) / 90.0; + `QiToPhi(Qp1, xg, temp1) + `QiToPhi(Qp2, xg, temp2) + QG_NQS = xg - (x_sp + 3.0 * (temp1 + temp2) + x_dp) * 0.125; + end else if (SWNQS_i == 3) begin + QS_NQS = (251.0 * Qp0 + 594.0 * Qp1 + 312.0 * Qp2 + 174.0 * Qp3 + 13.0 * QpN) / 2688.0; + QD_NQS = (251.0 * QpN + 594.0 * Qp3 + 312.0 * Qp2 + 174.0 * Qp1 + 13.0 * Qp0) / 2688.0; + `QiToPhi(Qp1, xg, temp1) + `QiToPhi(Qp2, xg, temp2) + `QiToPhi(Qp3, xg, temp3) + QG_NQS = xg - (x_sp + 4.0 * temp1 + 2.0 * temp2 + 4.0 * temp3 + x_dp) / 12.0; + end else if (SWNQS_i == 5) begin + QS_NQS = (1187.0 * Qp0 + 43.0 * QpN) / 18720.0 + (503.0 * Qp1 + 172.0 * Qp4 + + 87.0 * Qp5 + 265.0 * Qp3 + 328.0 * Qp2) / 3120.0; + QD_NQS = (1187.0 * QpN + 43.0 * Qp0) / 18720.0 + (503.0 * Qp5 + 172.0 * Qp2 + + 87.0 * Qp1 + 265.0 * Qp3 + 328.0 * Qp4) / 3120.0; + `QiToPhi(Qp1, xg, temp1) + `QiToPhi(Qp2, xg, temp2) + `QiToPhi(Qp3, xg, temp3) + `QiToPhi(Qp4, xg, temp4) + `QiToPhi(Qp5, xg, temp5) + QG_NQS = xg - (x_sp + 4.0 * (temp1 + temp3 + temp5) + 2.0 * (temp2 + temp4) + x_dp) / 18.0; + end else if (SWNQS_i == 9) begin + QS_NQS = (75653.0 * Qp8 + 225999.0 * Qp4) / 3782900.0 + (151321.0 * Qp9 + + 454023.0 * Qp7 + 1073767.0 * Qp3 + 1564569.0 * Qp1) / 15131600.0 + + 75623.0 * Qp6 / 1891450.0 + 145.0 * Qp5 / 2896.0 + 72263.0 * Qp2 / 945725.0 + + (3504517.0 * Qp0 + 75653.0 * QpN) / 90789600.0; + QD_NQS = (75653.0 * Qp2 + 225999.0 * Qp6) / 3782900.0 + (151321.0 * Qp1 + + 454023.0 * Qp3 + 1073767.0 * Qp7 + 1564569.0 * Qp9) / 15131600.0 + + 75623.0 * Qp4 / 1891450.0 + 145.0 * Qp5 / 2896.0 + 72263.0 * Qp8 / 945725.0 + + (3504517.0 * QpN + 75653.0 * Qp0) / 90789600.0; + `QiToPhi(Qp1, xg, temp1) + `QiToPhi(Qp2, xg, temp2) + `QiToPhi(Qp3, xg, temp3) + `QiToPhi(Qp4, xg, temp4) + `QiToPhi(Qp5, xg, temp5) + `QiToPhi(Qp6, xg, temp6) + `QiToPhi(Qp7, xg, temp7) + `QiToPhi(Qp8, xg, temp8) + `QiToPhi(Qp9, xg, temp9) + QG_NQS = xg - (x_sp + 4.0 * (temp1 + temp3 + temp5 + temp7 + temp9) + + 2.0 * (temp2 + temp4 + temp6 + temp8) + x_dp) / 30.0; + end + QG_NQS = pd * QG_NQS; + + if (sigVds > 0) begin + Qs = COX_qm * phit1 * QS_NQS; + Qd = COX_qm * phit1 * QD_NQS; + end else begin + Qs = COX_qm * phit1 * QD_NQS; + Qd = COX_qm * phit1 * QS_NQS; + end + Qg = COX_qm * phit1 * QG_NQS; + Qb = -Qg - Qs - Qd; + end + + // Update internal nodes + V(RES1) <+ vnorm_inv * I(RES1) * r_nqs; + V(SPLINE1) <+ idt(-vnorm_inv * Tnorm * fk1, Qp1_0); + V(RES2) <+ vnorm_inv * I(RES2) * r_nqs; + V(SPLINE2) <+ idt(-vnorm_inv * Tnorm * fk2, Qp2_0); + V(RES3) <+ vnorm_inv * I(RES3) * r_nqs; + V(SPLINE3) <+ idt(-vnorm_inv * Tnorm * fk3, Qp3_0); + V(RES4) <+ vnorm_inv * I(RES4) * r_nqs; + V(SPLINE4) <+ idt(-vnorm_inv * Tnorm * fk4, Qp4_0); + V(RES5) <+ vnorm_inv * I(RES5) * r_nqs; + V(SPLINE5) <+ idt(-vnorm_inv * Tnorm * fk5, Qp5_0); + V(RES6) <+ vnorm_inv * I(RES6) * r_nqs; + V(SPLINE6) <+ idt(-vnorm_inv * Tnorm * fk6, Qp6_0); + V(RES7) <+ vnorm_inv * I(RES7) * r_nqs; + V(SPLINE7) <+ idt(-vnorm_inv * Tnorm * fk7, Qp7_0); + V(RES8) <+ vnorm_inv * I(RES8) * r_nqs; + V(SPLINE8) <+ idt(-vnorm_inv * Tnorm * fk8, Qp8_0); + V(RES9) <+ vnorm_inv * I(RES9) * r_nqs; + V(SPLINE9) <+ idt(-vnorm_inv * Tnorm * fk9, Qp9_0); + diff --git a/src/spicelib/devices/adms/psp102/adms3va/PSP102_InitNQS.include b/src/spicelib/devices/adms/psp102/adms3va/PSP102_InitNQS.include new file mode 100644 index 000000000..a42383d16 --- /dev/null +++ b/src/spicelib/devices/adms/psp102/adms3va/PSP102_InitNQS.include @@ -0,0 +1,190 @@ +//====================================================================================== +//====================================================================================== +// Filename: PSP102_InitNQS.include +//====================================================================================== +//====================================================================================== +// +// (c) Copyright 2007, All Rights Reserved, NXP Semiconductors +// +// +// Version: 102.1, April 2007 (Simkit 2.5) +// +//====================================================================================== +//====================================================================================== +// +// Further information can be found in the file readme.txt +// + + ///////////////////////////////////////////////////////////////////////////// + // + // Computing initial (dc) values for internal nodes. + // This code is independent of internal-node voltages + // + ///////////////////////////////////////////////////////////////////////////// + + Qp1_0 = 0.0; + Qp2_0 = 0.0; + Qp3_0 = 0.0; + Qp4_0 = 0.0; + Qp5_0 = 0.0; + Qp6_0 = 0.0; + Qp7_0 = 0.0; + Qp8_0 = 0.0; + Qp9_0 = 0.0; + fk1 = 0.0; + fk2 = 0.0; + fk3 = 0.0; + fk4 = 0.0; + fk5 = 0.0; + fk6 = 0.0; + fk7 = 0.0; + fk8 = 0.0; + fk9 = 0.0; + if (SWNQS_i != 0) begin + dQis = 0.0; + dQy = 0.0; + dfQi = 0.0; + fQi = 0.0; + d2Qy = 0.0; + + Qp1 = 0.0; + Qp2 = 0.0; + Qp3 = 0.0; + Qp4 = 0.0; + Qp5 = 0.0; + Qp6 = 0.0; + Qp7 = 0.0; + Qp8 = 0.0; + Qp9 = 0.0; + + phi_p1 = 0.0; + phi_p2 = 0.0; + phi_p3 = 0.0; + phi_p4 = 0.0; + phi_p5 = 0.0; + phi_p6 = 0.0; + phi_p7 = 0.0; + phi_p8 = 0.0; + phi_p9 = 0.0; + + // Setting initial values for charge along the channel + // from interpolated DC-solution + if (xg > 0) begin + if (SWNQS_i == 1) begin + phi_p1 = `Phiy(0.5); + `PhiToQb(phi_p1,Qb_tmp) + Qp1_0 = -pd * (xg - phi_p1) - Qb_tmp; + end else if (SWNQS_i == 2) begin + phi_p1 = `Phiy(`oneThird); + `PhiToQb(phi_p1,Qb_tmp) + Qp1_0 = -pd * (xg - phi_p1) - Qb_tmp; + + phi_p2 = `Phiy(`twoThirds); + `PhiToQb(phi_p2,Qb_tmp) + Qp2_0 = -pd * (xg - phi_p2) - Qb_tmp; + if (sigVds < 0) begin + `swap(Qp1_0, Qp2_0) + end + end else if (SWNQS_i == 3) begin + phi_p1 = `Phiy(0.25); + `PhiToQb(phi_p1,Qb_tmp) + Qp1_0 = -pd * (xg - phi_p1) - Qb_tmp; + + phi_p2 = `Phiy(0.5); + `PhiToQb(phi_p2,Qb_tmp) + Qp2_0 = -pd * (xg - phi_p2) - Qb_tmp; + + phi_p3 = `Phiy(0.75); + `PhiToQb(phi_p3,Qb_tmp) + Qp3_0 = -pd * (xg - phi_p3) - Qb_tmp; + if (sigVds < 0) begin + `swap(Qp1_0, Qp3_0) + end + end else if (SWNQS_i == 5) begin + phi_p1 = `Phiy(`oneSixth); + `PhiToQb(phi_p1,Qb_tmp) + Qp1_0 = -pd * (xg - phi_p1) - Qb_tmp; + + phi_p2 = `Phiy(`oneThird); + `PhiToQb(phi_p2,Qb_tmp) + Qp2_0 = -pd * (xg - phi_p2) - Qb_tmp; + + phi_p3 = `Phiy(0.5); + `PhiToQb(phi_p3,Qb_tmp) + Qp3_0 = -pd * (xg - phi_p3) - Qb_tmp; + + phi_p4 = `Phiy(`twoThirds); + `PhiToQb(phi_p4,Qb_tmp) + Qp4_0 = -pd * (xg - phi_p4) - Qb_tmp; + + phi_p5 = `Phiy(0.8333333333333333); + `PhiToQb(phi_p5,Qb_tmp) + Qp5_0 = -pd * (xg - phi_p5) - Qb_tmp; + if (sigVds < 0) begin + `swap(Qp1_0, Qp5_0) + `swap(Qp2_0, Qp4_0) + end + end else if (SWNQS_i == 9) begin + phi_p1 = `Phiy(0.1); + `PhiToQb(phi_p1,Qb_tmp) + Qp1_0 = -pd * (xg - phi_p1) - Qb_tmp; + + phi_p2 = `Phiy(0.2); + `PhiToQb(phi_p2,Qb_tmp) + Qp2_0 = -pd * (xg - phi_p2) - Qb_tmp; + + phi_p3 = `Phiy(0.3); + `PhiToQb(phi_p3,Qb_tmp) + Qp3_0 = -pd * (xg - phi_p3) - Qb_tmp; + + phi_p4 = `Phiy(0.4); + `PhiToQb(phi_p4,Qb_tmp) + Qp4_0 = -pd * (xg - phi_p4) - Qb_tmp; + + phi_p5 = `Phiy(0.5); + `PhiToQb(phi_p5,Qb_tmp) + Qp5_0 = -pd * (xg - phi_p5) - Qb_tmp; + + phi_p6 = `Phiy(0.6); + `PhiToQb(phi_p6,Qb_tmp) + Qp6_0 = -pd * (xg - phi_p6) - Qb_tmp; + + phi_p7 = `Phiy(0.7); + `PhiToQb(phi_p7,Qb_tmp) + Qp7_0 = -pd * (xg - phi_p7) - Qb_tmp; + + phi_p8 = `Phiy(0.8); + `PhiToQb(phi_p8,Qb_tmp) + Qp8_0 = -pd * (xg - phi_p8) - Qb_tmp; + + phi_p9 = `Phiy(0.9); + `PhiToQb(phi_p9,Qb_tmp) + Qp9_0 = -pd * (xg - phi_p9) - Qb_tmp; + if (sigVds < 0) begin + `swap(Qp1_0, Qp9_0) + `swap(Qp2_0, Qp8_0) + `swap(Qp3_0, Qp7_0) + `swap(Qp4_0, Qp6_0) + end + end + end // (x_g >0) + end // (SWNQS_i != 0) + + x_sp = 0.0; + x_dp = 0.0; + Qp0 = 0.0; + QpN = 0.0; + if (SWNQS_i != 0.0) begin + x_sp = x_m - sigVds * 0.5 * dps * inv_phit1; + x_dp = x_m + sigVds * 0.5 * dps * inv_phit1; + Qp0 = 0.0; + QpN = 0.0; + if (x_sp > 0) begin + `PhiToQb(x_sp, QbSIGN) + Qp0 = -pd * (xg - x_sp) - QbSIGN; + end + if (x_dp > 0) begin + `PhiToQb(x_dp, QbSIGN) + QpN = -pd * (xg - x_dp) - QbSIGN; + end + end diff --git a/src/spicelib/devices/adms/psp102/adms3va/PSP102_binning.include b/src/spicelib/devices/adms/psp102/adms3va/PSP102_binning.include new file mode 100644 index 000000000..2c044e0ff --- /dev/null +++ b/src/spicelib/devices/adms/psp102/adms3va/PSP102_binning.include @@ -0,0 +1,127 @@ +//====================================================================================== +//====================================================================================== +// Filename: PSP102_binning.include +//====================================================================================== +//====================================================================================== +// +// (c) Copyright 2007, All Rights Reserved, NXP Semiconductors +// +// +// Version: 102.1, April 2007 (Simkit 2.5) +// +//====================================================================================== +//====================================================================================== +// +// Further information can be found in the file readme.txt +// + + // auxiliary variables + iLEWE = iLE * iWE; + iiLE = LE / LEN; + iiWE = WE / WEN; + iiLEWE = iiLE * iiWE; + iiiLEWE = iiWE / iiLE; + + // auxiliary variables for COX only + iiLEcv = LEcv / LEN; + iiWEcv = WEcv / WEN; + iiLEWEcv = iiLEcv * iiWEcv; + + // auxiliary variables for CGOV only + iLEcv = LEN / LEcv; + iiiLEWEcv = iiWEcv / iiLEcv; + + // auxiliary variables for CGBOV only + iiLcv = Lcv / LEN; + iiWcv = Wcv / WEN; + iiLWcv = iiLcv * iiWcv; + + // auxiliary variables for CFR only + iLcv = LEN / Lcv; + iiiLWcv = iiWcv / iiLcv; + + // Process parameters + VFB = POVFB + iLE * PLVFB + iWE * PWVFB + iLEWE * PLWVFB; + STVFB = POSTVFB + iLE * PLSTVFB + iWE * PWSTVFB + iLEWE * PLWSTVFB; + TOX = POTOX; + NEFF = PONEFF + iLE * PLNEFF + iWE * PWNEFF + iLEWE * PLWNEFF; + VNSUB = POVNSUB; + NSLP = PONSLP; + DNSUB = PODNSUB; + DPHIB = PODPHIB + iLE * PLDPHIB + iWE * PWDPHIB + iLEWE * PLWDPHIB; + NP = PONP + iLE * PLNP + iWE * PWNP + iLEWE * PLWNP; + CT = POCT + iLE * PLCT + iWE * PWCT + iLEWE * PLWCT; + TOXOV = POTOXOV; + NOV = PONOV + iLE * PLNOV + iWE * PWNOV + iLEWE * PLWNOV; + + // DIBL parameters + CF = POCF + iLE * PLCF + iWE * PWCF + iLEWE * PLWCF; + CFB = POCFB; + + // Mobility parameters + BETN = POBETN + iLE * PLBETN + iiWE * PWBETN + iiiLEWE * PLWBETN; + STBET = POSTBET + iLE * PLSTBET + iWE * PWSTBET + iLEWE * PLWSTBET; + MUE = POMUE + iLE * PLMUE + iWE * PWMUE + iLEWE * PLWMUE; + STMUE = POSTMUE; + THEMU = POTHEMU; + STTHEMU = POSTTHEMU; + CS = POCS + iLE * PLCS + iWE * PWCS + iLEWE * PLWCS; + STCS = POSTCS; + XCOR = POXCOR + iLE * PLXCOR + iWE * PWXCOR + iLEWE * PLWXCOR; + STXCOR = POSTXCOR; + FETA = POFETA; + + // Series resistance parameters + RS = PORS + iLE * PLRS + iWE * PWRS + iLEWE * PLWRS; + STRS = POSTRS; + RSB = PORSB; + RSG = PORSG; + + // Velocity saturation parameters + THESAT = POTHESAT + iLE * PLTHESAT + iWE * PWTHESAT + iLEWE * PLWTHESAT; + STTHESAT = POSTTHESAT + iLE * PLSTTHESAT + iWE * PWSTTHESAT + iLEWE * PLWSTTHESAT; + THESATB = POTHESATB + iLE * PLTHESATB + iWE * PWTHESATB + iLEWE * PLWTHESATB; + THESATG = POTHESATG + iLE * PLTHESATG + iWE * PWTHESATG + iLEWE * PLWTHESATG; + + // Saturation voltage parameters + AX = POAX + iLE * PLAX + iWE * PWAX + iLEWE * PLWAX; + + // Channel length modulation (CLM) parameters + ALP = POALP + iLE * PLALP + iWE * PWALP + iLEWE * PLWALP; + ALP1 = POALP1 + iLE * PLALP1 + iWE * PWALP1 + iLEWE * PLWALP1; + ALP2 = POALP2 + iLE * PLALP2 + iWE * PWALP2 + iLEWE * PLWALP2; + VP = POVP; + + // Impact ionization parameters + A1 = POA1 + iLE * PLA1 + iWE * PWA1 + iLEWE * PLWA1; + A2 = POA2; + STA2 = POSTA2; + A3 = POA3 + iLE * PLA3 + iWE * PWA3 + iLEWE * PLWA3; + A4 = POA4 + iLE * PLA4 + iWE * PWA4 + iLEWE * PLWA4; + GCO = POGCO; + + // Gate current parameters + IGINV = POIGINV + iiLE * PLIGINV + iiWE * PWIGINV + iiLEWE * PLWIGINV; + IGOV = POIGOV + iLE * PLIGOV + iiWE * PWIGOV + iiiLEWE * PLWIGOV; + STIG = POSTIG; + GC2 = POGC2; + GC3 = POGC3; + CHIB = POCHIB; + + // Gate-induced drain leakage (GIDL) parameters + AGIDL = POAGIDL + iLE * PLAGIDL + iiWE * PWAGIDL + iiiLEWE * PLWAGIDL; + BGIDL = POBGIDL; + STBGIDL = POSTBGIDL; + CGIDL = POCGIDL; + + // Charge model parameters + COX = POCOX + iiLEcv * PLCOX + iiWEcv * PWCOX + iiLEWEcv * PLWCOX; + CGOV = POCGOV + iLEcv * PLCGOV + iiWEcv * PWCGOV + iiiLEWEcv * PLWCGOV; + CGBOV = POCGBOV + iiLcv * PLCGBOV + iiWcv * PWCGBOV + iiLWcv * PLWCGBOV; + CFR = POCFR + iLcv * PLCFR + iiWcv * PWCFR + iiiLWcv * PLWCFR; + + // Noise model parameters + FNT = POFNT; + NFA = PONFA + iLE * PLNFA + iWE * PWNFA + iLEWE * PLWNFA; + NFB = PONFB + iLE * PLNFB + iWE * PWNFB + iLEWE * PLWNFB; + NFC = PONFC + iLE * PLNFC + iWE * PWNFC + iLEWE * PLWNFC; diff --git a/src/spicelib/devices/adms/psp102/adms3va/PSP102_binpars.include b/src/spicelib/devices/adms/psp102/adms3va/PSP102_binpars.include new file mode 100644 index 000000000..625bb1e1a --- /dev/null +++ b/src/spicelib/devices/adms/psp102/adms3va/PSP102_binpars.include @@ -0,0 +1,233 @@ +//====================================================================================== +//====================================================================================== +// Filename: PSP102_binpars.include +//====================================================================================== +//====================================================================================== +// +// (c) Copyright 2007, All Rights Reserved, NXP Semiconductors +// +// +// Version: 102.1, April 2007 (Simkit 2.5) +// +//====================================================================================== +//====================================================================================== +// +// Further information can be found in the file readme.txt +// + + /////////////////////////////////////////////////// + // PSP global model parameters (binning) + /////////////////////////////////////////////////// + + parameter real LEVEL = 1021 `P(info="Model level" unit="" ); + parameter real TYPE = 1 `from( -1.0,1.0 ) `P(info="Channel type parameter, +1=NMOS -1=PMOS" unit="" ); + parameter real TR = 21 `from( -273.0,inf ) `P(info="nominal (reference) temperature" unit="C" ); + + // Switch parameters + parameter real SWIGATE = 0 `from( 0.0,1.0 ) `P(info="Flag for gate current, 0=turn off IG" unit="" ); + parameter real SWIMPACT = 0 `from( 0.0,1.0 ) `P(info="Flag for impact ionization current, 0=turn off II" unit="" ); + parameter real SWGIDL = 0 `from( 0.0,1.0 ) `P(info="Flag for GIDL current, 0=turn off IGIDL" unit="" ); + parameter real SWJUNCAP = 0 `from( 0.0,3.0 ) `P(info="Flag for juncap, 0=turn off juncap" unit="" ); + parameter real QMC = 1 `from( 0.0,inf ) `P(info="Quantum-mechanical correction factor" unit="" ); + + // Process parameters + parameter real LVARO = 0 `P(info="Geometry independent difference between actual and programmed poly-silicon gate length" unit="m" ); + parameter real LVARL = 0 `P(info="Length dependence of difference between actual and programmed poly-silicon gate length" unit="" ); + parameter real LAP = 0 `P(info="Effective channel length reduction per side due to lateral diffusion of source/drain dopant ions" unit="m" ); + parameter real WVARO = 0 `P(info="Geometry independent difference between actual and programmed field-oxide opening" unit="m" ); + parameter real WVARW = 0 `P(info="Width dependence of difference between actual and programmed field-oxide opening" unit="" ); + parameter real WOT = 0 `P(info="Effective reduction of channel width per side due to lateral diffusion of channel-stop dopant ions" unit="m" ); + parameter real DLQ = 0 `P(info="Effective channel length reduction for CV" unit="m" ); + parameter real DWQ = 0 `P(info="Effective channel width reduction for CV" unit="m" ); + parameter real POVFB = -1 `P(info="Coefficient for the geometry independent part of VFB" unit="V" ); + parameter real PLVFB = 0.0 `P(info="Coefficient for the length dependence of VFB" unit="V" ); + parameter real PWVFB = 0.0 `P(info="Coefficient for the width dependence of VFB" unit="V" ); + parameter real PLWVFB = 0.0 `P(info="Coefficient for the length times width dependence of VFB" unit="V" ); + parameter real POSTVFB = 0.0005 `P(info="Coefficient for the geometry independent part of STVFB" unit="V/K" ); + parameter real PLSTVFB = 0.0 `P(info="Coefficient for the length dependence of STVFB" unit="V/K" ); + parameter real PWSTVFB = 0.0 `P(info="Coefficient for the width dependence of STVFB" unit="V/K" ); + parameter real PLWSTVFB = 0.0 `P(info="Coefficient for the length times width dependence of STVFB" unit="V/K" ); + parameter real POTOX = 2E-09 `P(info="Coefficient for the geometry independent part of TOX" unit="m" ); + parameter real PONEFF = 5E+23 `P(info="Coefficient for the geometry independent part of NEFF" unit="m^-3" ); + parameter real PLNEFF = 0.0 `P(info="Coefficient for the length dependence of NEFF" unit="m^-3" ); + parameter real PWNEFF = 0.0 `P(info="Coefficient for the width dependence of NEFF" unit="m^-3" ); + parameter real PLWNEFF = 0.0 `P(info="Coefficient for the length times width dependence of NEFF" unit="m^-3" ); + parameter real POVNSUB = 0 `P(info="Coefficient for the geometry independent part of VNSUB" unit="V" ); + parameter real PONSLP = 0.05 `P(info="Coefficient for the geometry independent part of NSLP" unit="V" ); + parameter real PODNSUB = 0 `P(info="Coefficient for the geometry independent part of DNSUB" unit="V^-1" ); + parameter real PODPHIB = 0 `P(info="Coefficient for the geometry independent part of DPHIB" unit="V" ); + parameter real PLDPHIB = 0.0 `P(info="Coefficient for the length dependence of DPHIB" unit="V" ); + parameter real PWDPHIB = 0.0 `P(info="Coefficient for the width dependence of DPHIB" unit="V" ); + parameter real PLWDPHIB = 0.0 `P(info="Coefficient for the length times width dependence of DPHIB" unit="V" ); + parameter real PONP = 1E+26 `P(info="Coefficient for the geometry independent part of NP" unit="m^-3" ); + parameter real PLNP = 0.0 `P(info="Coefficient for the length dependence of NP" unit="m^-3" ); + parameter real PWNP = 0.0 `P(info="Coefficient for the width dependence of NP" unit="m^-3" ); + parameter real PLWNP = 0.0 `P(info="Coefficient for the length times width dependence of NP" unit="m^-3" ); + parameter real POCT = 0 `P(info="Coefficient for the geometry independent part of CT" unit="" ); + parameter real PLCT = 0.0 `P(info="Coefficient for the length dependence of CT" unit="" ); + parameter real PWCT = 0.0 `P(info="Coefficient for the width dependence of CT" unit="" ); + parameter real PLWCT = 0.0 `P(info="Coefficient for the length times width dependence of CT" unit="" ); + parameter real POTOXOV = 2E-09 `P(info="Coefficient for the geometry independent part of TOXOV" unit="m" ); + parameter real PONOV = 5E+25 `P(info="Coefficient for the geometry independent part of NOV" unit="m^-3" ); + parameter real PLNOV = 0.0 `P(info="Coefficient for the length dependence of NOV" unit="m^-3" ); + parameter real PWNOV = 0.0 `P(info="Coefficient for the width dependence of NOV" unit="m^-3" ); + parameter real PLWNOV = 0.0 `P(info="Coefficient for the length times width dependence of NOV" unit="m^-3" ); + + // DIBL parameters + parameter real POCF = 0 `P(info="Coefficient for the geometry independent part of CF" unit="V^-1" ); + parameter real PLCF = 0.0 `P(info="Coefficient for the length dependence of CF" unit="V^-1" ); + parameter real PWCF = 0.0 `P(info="Coefficient for the width dependence of CF" unit="V^-1" ); + parameter real PLWCF = 0.0 `P(info="Coefficient for the length times width dependence of CF" unit="V^-1" ); + parameter real POCFB = 0 `P(info="Coefficient for the geometry independent part of CFB" unit="V^-1" ); + + // Mobility parameters + parameter real POBETN = 0.07 `P(info="Coefficient for the geometry independent part of BETN" unit="m^2/V/s" ); + parameter real PLBETN = 0.0 `P(info="Coefficient for the length dependence of BETN" unit="m^2/V/s" ); + parameter real PWBETN = 0.0 `P(info="Coefficient for the width dependence of BETN" unit="m^2/V/s" ); + parameter real PLWBETN = 0.0 `P(info="Coefficient for the length times width dependence of BETN" unit="m^2/V/s" ); + parameter real POSTBET = 1 `P(info="Coefficient for the geometry independent part of STBET" unit="" ); + parameter real PLSTBET = 0.0 `P(info="Coefficient for the length dependence of STBET" unit="" ); + parameter real PWSTBET = 0.0 `P(info="Coefficient for the width dependence of STBET" unit="" ); + parameter real PLWSTBET = 0.0 `P(info="Coefficient for the length times width dependence of STBET" unit="" ); + parameter real POMUE = 0.5 `P(info="Coefficient for the geometry independent part of MUE" unit="m/V" ); + parameter real PLMUE = 0.0 `P(info="Coefficient for the length dependence of MUE" unit="m/V" ); + parameter real PWMUE = 0.0 `P(info="Coefficient for the width dependence of MUE" unit="m/V" ); + parameter real PLWMUE = 0.0 `P(info="Coefficient for the length times width dependence of MUE" unit="m/V" ); + parameter real POSTMUE = 0 `P(info="Coefficient for the geometry independent part of STMUE" unit="" ); + parameter real POTHEMU = 1.5 `P(info="Coefficient for the geometry independent part of THEMU" unit="" ); + parameter real POSTTHEMU = 1.5 `P(info="Coefficient for the geometry independent part of STTHEMU" unit="" ); + parameter real POCS = 0 `P(info="Coefficient for the geometry independent part of CS" unit="" ); + parameter real PLCS = 0.0 `P(info="Coefficient for the length dependence of CS" unit="" ); + parameter real PWCS = 0.0 `P(info="Coefficient for the width dependence of CS" unit="" ); + parameter real PLWCS = 0.0 `P(info="Coefficient for the length times width dependence of CS" unit="" ); + parameter real POSTCS = 0 `P(info="Coefficient for the geometry independent part of STCS" unit="" ); + parameter real POXCOR = 0 `P(info="Coefficient for the geometry independent part of XCOR" unit="V^-1" ); + parameter real PLXCOR = 0.0 `P(info="Coefficient for the length dependence of XCOR" unit="V^-1" ); + parameter real PWXCOR = 0.0 `P(info="Coefficient for the width dependence of XCOR" unit="V^-1" ); + parameter real PLWXCOR = 0.0 `P(info="Coefficient for the length times width dependence of XCOR" unit="V^-1" ); + parameter real POSTXCOR = 0 `P(info="Coefficient for the geometry independent part of STXCOR" unit="" ); + parameter real POFETA = 1 `P(info="Coefficient for the geometry independent part of FETA" unit="" ); + + // Series resistance parameters + parameter real PORS = 30 `P(info="Coefficient for the geometry independent part of RS" unit="Ohm" ); + parameter real PLRS = 0.0 `P(info="Coefficient for the length dependence of RS" unit="Ohm" ); + parameter real PWRS = 0.0 `P(info="Coefficient for the width dependence of RS" unit="Ohm" ); + parameter real PLWRS = 0.0 `P(info="Coefficient for the length times width dependence of RS" unit="Ohm" ); + parameter real POSTRS = 1 `P(info="Coefficient for the geometry independent part of STRS" unit="" ); + parameter real PORSB = 0 `P(info="Coefficient for the geometry independent part of RSB" unit="V^-1" ); + parameter real PORSG = 0 `P(info="Coefficient for the geometry independent part of RSG" unit="V^-1" ); + + // Velocity saturation parameters + parameter real POTHESAT = 1 `P(info="Coefficient for the geometry independent part of THESAT" unit="V^-1" ); + parameter real PLTHESAT = 0.0 `P(info="Coefficient for the length dependence of THESAT" unit="V^-1" ); + parameter real PWTHESAT = 0.0 `P(info="Coefficient for the width dependence of THESAT" unit="V^-1" ); + parameter real PLWTHESAT = 0.0 `P(info="Coefficient for the length times width dependence of THESAT" unit="V^-1" ); + parameter real POSTTHESAT = 1 `P(info="Coefficient for the geometry independent part of STTHESAT" unit="" ); + parameter real PLSTTHESAT = 0.0 `P(info="Coefficient for the length dependence of STTHESAT" unit="" ); + parameter real PWSTTHESAT = 0.0 `P(info="Coefficient for the width dependence of STTHESAT" unit="" ); + parameter real PLWSTTHESAT = 0.0 `P(info="Coefficient for the length times width dependence of STTHESAT" unit="" ); + parameter real POTHESATB = 0 `P(info="Coefficient for the geometry independent part of THESATB" unit="V^-1" ); + parameter real PLTHESATB = 0.0 `P(info="Coefficient for the length dependence of THESATB" unit="V^-1" ); + parameter real PWTHESATB = 0.0 `P(info="Coefficient for the width dependence of THESATB" unit="V^-1" ); + parameter real PLWTHESATB = 0.0 `P(info="Coefficient for the length times width dependence of THESATB" unit="V^-1" ); + parameter real POTHESATG = 0 `P(info="Coefficient for the geometry independent part of THESATG" unit="V^-1" ); + parameter real PLTHESATG = 0.0 `P(info="Coefficient for the length dependence of THESATG" unit="V^-1" ); + parameter real PWTHESATG = 0.0 `P(info="Coefficient for the width dependence of THESATG" unit="V^-1" ); + parameter real PLWTHESATG = 0.0 `P(info="Coefficient for the length times width dependence of THESATG" unit="V^-1" ); + + // Saturation voltage parameters + parameter real POAX = 3 `P(info="Coefficient for the geometry independent part of AX" unit="" ); + parameter real PLAX = 0.0 `P(info="Coefficient for the length dependence of AX" unit="" ); + parameter real PWAX = 0.0 `P(info="Coefficient for the width dependence of AX" unit="" ); + parameter real PLWAX = 0.0 `P(info="Coefficient for the length times width dependence of AX" unit="" ); + + // Channel length modulation (CLM) parameters + parameter real POALP = 0.01 `P(info="Coefficient for the geometry independent part of ALP" unit="" ); + parameter real PLALP = 0.0 `P(info="Coefficient for the length dependence of ALP" unit="" ); + parameter real PWALP = 0.0 `P(info="Coefficient for the width dependence of ALP" unit="" ); + parameter real PLWALP = 0.0 `P(info="Coefficient for the length times width dependence of ALP" unit="" ); + parameter real POALP1 = 0 `P(info="Coefficient for the geometry independent part of ALP1" unit="V" ); + parameter real PLALP1 = 0.0 `P(info="Coefficient for the length dependence of ALP1" unit="V" ); + parameter real PWALP1 = 0.0 `P(info="Coefficient for the width dependence of ALP1" unit="V" ); + parameter real PLWALP1 = 0.0 `P(info="Coefficient for the length times width dependence of ALP1" unit="V" ); + parameter real POALP2 = 0 `P(info="Coefficient for the geometry independent part of ALP2" unit="V^-1" ); + parameter real PLALP2 = 0.0 `P(info="Coefficient for the length dependence of ALP2" unit="V^-1" ); + parameter real PWALP2 = 0.0 `P(info="Coefficient for the width dependence of ALP2" unit="V^-1" ); + parameter real PLWALP2 = 0.0 `P(info="Coefficient for the length times width dependence of ALP2" unit="V^-1" ); + parameter real POVP = 0.05 `P(info="Coefficient for the geometry independent part of VP" unit="V" ); + + // Impact ionization parameters + parameter real POA1 = 1 `P(info="Coefficient for the geometry independent part of A1" unit="" ); + parameter real PLA1 = 0.0 `P(info="Coefficient for the length dependence of A1" unit="" ); + parameter real PWA1 = 0.0 `P(info="Coefficient for the width dependence of A1" unit="" ); + parameter real PLWA1 = 0.0 `P(info="Coefficient for the length times width dependence of A1" unit="" ); + parameter real POA2 = 10 `P(info="Coefficient for the geometry independent part of A2" unit="V" ); + parameter real POSTA2 = 0 `P(info="Coefficient for the geometry independent part of STA2" unit="V" ); + parameter real POA3 = 1 `P(info="Coefficient for the geometry independent part of A3" unit="" ); + parameter real PLA3 = 0.0 `P(info="Coefficient for the length dependence of A3" unit="" ); + parameter real PWA3 = 0.0 `P(info="Coefficient for the width dependence of A3" unit="" ); + parameter real PLWA3 = 0.0 `P(info="Coefficient for the length times width dependence of A3" unit="" ); + parameter real POA4 = 0 `P(info="Coefficient for the geometry independent part of A4" unit="V^-0.5" ); + parameter real PLA4 = 0.0 `P(info="Coefficient for the length dependence of A4" unit="V^-0.5" ); + parameter real PWA4 = 0.0 `P(info="Coefficient for the width dependence of A4" unit="V^-0.5" ); + parameter real PLWA4 = 0.0 `P(info="Coefficient for the length times width dependence of A4" unit="V^-0.5" ); + parameter real POGCO = 0 `P(info="Coefficient for the geometry independent part of GCO" unit="" ); + + // Gate current parameters + parameter real POIGINV = 0 `P(info="Coefficient for the geometry independent part of IGINV" unit="A" ); + parameter real PLIGINV = 0.0 `P(info="Coefficient for the length dependence of IGINV" unit="A" ); + parameter real PWIGINV = 0.0 `P(info="Coefficient for the width dependence of IGINV" unit="A" ); + parameter real PLWIGINV = 0.0 `P(info="Coefficient for the length times width dependence of IGINV" unit="A" ); + parameter real POIGOV = 0 `P(info="Coefficient for the geometry independent part of IGOV" unit="A" ); + parameter real PLIGOV = 0.0 `P(info="Coefficient for the length dependence of IGOV" unit="A" ); + parameter real PWIGOV = 0.0 `P(info="Coefficient for the width dependence of IGOV" unit="A" ); + parameter real PLWIGOV = 0.0 `P(info="Coefficient for the length times width dependence of IGOV" unit="A" ); + parameter real POSTIG = 2 `P(info="Coefficient for the geometry independent part of STIG" unit="" ); + parameter real POGC2 = 0.375 `P(info="Coefficient for the geometry independent part of GC2" unit="" ); + parameter real POGC3 = 0.063 `P(info="Coefficient for the geometry independent part of GC3" unit="" ); + parameter real POCHIB = 3.1 `P(info="Coefficient for the geometry independent part of CHIB" unit="V" ); + + // Gate-induced drain leakage (GIDL) parameters + parameter real POAGIDL = 0 `P(info="Coefficient for the geometry independent part of AGIDL" unit="A/V^3" ); + parameter real PLAGIDL = 0.0 `P(info="Coefficient for the length dependence of AGIDL" unit="A/V^3" ); + parameter real PWAGIDL = 0.0 `P(info="Coefficient for the width dependence of AGIDL" unit="A/V^3" ); + parameter real PLWAGIDL = 0.0 `P(info="Coefficient for the length times width dependence of AGIDL" unit="A/V^3" ); + parameter real POBGIDL = 41 `P(info="Coefficient for the geometry independent part of BGIDL" unit="V" ); + parameter real POSTBGIDL = 0 `P(info="Coefficient for the geometry independent part of STBGIDL" unit="V/K" ); + parameter real POCGIDL = 0 `P(info="Coefficient for the geometry independent part of CGIDL" unit="" ); + + // Charge model parameters + parameter real POCOX = 1E-14 `P(info="Coefficient for the geometry independent part of COX" unit="F" ); + parameter real PLCOX = 0.0 `P(info="Coefficient for the length dependence of COX" unit="F" ); + parameter real PWCOX = 0.0 `P(info="Coefficient for the width dependence of COX" unit="F" ); + parameter real PLWCOX = 0.0 `P(info="Coefficient for the length times width dependence of COX" unit="F" ); + parameter real POCGOV = 1E-15 `P(info="Coefficient for the geometry independent part of CGOV" unit="F" ); + parameter real PLCGOV = 0.0 `P(info="Coefficient for the length dependence of CGOV" unit="F" ); + parameter real PWCGOV = 0.0 `P(info="Coefficient for the width dependence of CGOV" unit="F" ); + parameter real PLWCGOV = 0.0 `P(info="Coefficient for the length times width dependence of CGOV" unit="F" ); + parameter real POCGBOV = 0 `P(info="Coefficient for the geometry independent part of CGBOV" unit="F" ); + parameter real PLCGBOV = 0.0 `P(info="Coefficient for the length dependence of CGBOV" unit="F" ); + parameter real PWCGBOV = 0.0 `P(info="Coefficient for the width dependence of CGBOV" unit="F" ); + parameter real PLWCGBOV = 0.0 `P(info="Coefficient for the length times width dependence of CGBOV" unit="F" ); + parameter real POCFR = 0 `P(info="Coefficient for the geometry independent part of CFR" unit="F" ); + parameter real PLCFR = 0.0 `P(info="Coefficient for the length dependence of CFR" unit="F" ); + parameter real PWCFR = 0.0 `P(info="Coefficient for the width dependence of CFR" unit="F" ); + parameter real PLWCFR = 0.0 `P(info="Coefficient for the length times width dependence of CFR" unit="F" ); + + // Noise model parameters + parameter real POFNT = 1 `P(info="Coefficient for the geometry independent part of FNT" unit="" ); + parameter real PONFA = 8E+22 `P(info="Coefficient for the geometry independent part of NFA" unit="V^-1/m^4" ); + parameter real PLNFA = 0.0 `P(info="Coefficient for the length dependence of NFA" unit="V^-1/m^4" ); + parameter real PWNFA = 0.0 `P(info="Coefficient for the width dependence of NFA" unit="V^-1/m^4" ); + parameter real PLWNFA = 0.0 `P(info="Coefficient for the length times width dependence of NFA" unit="V^-1/m^4" ); + parameter real PONFB = 3E+07 `P(info="Coefficient for the geometry independent part of NFB" unit="V^-1/m^2" ); + parameter real PLNFB = 0.0 `P(info="Coefficient for the length dependence of NFB" unit="V^-1/m^2" ); + parameter real PWNFB = 0.0 `P(info="Coefficient for the width dependence of NFB" unit="V^-1/m^2" ); + parameter real PLWNFB = 0.0 `P(info="Coefficient for the length times width dependence of NFB" unit="V^-1/m^2" ); + parameter real PONFC = 0 `P(info="Coefficient for the geometry independent part of NFC" unit="V^-1" ); + parameter real PLNFC = 0.0 `P(info="Coefficient for the length dependence of NFC" unit="V^-1" ); + parameter real PWNFC = 0.0 `P(info="Coefficient for the width dependence of NFC" unit="V^-1" ); + parameter real PLWNFC = 0.0 `P(info="Coefficient for the length times width dependence of NFC" unit="V^-1" ); + + // Other parameters + parameter real DTA = 0 `P(info="Temperature offset w.r.t. ambient temperature" unit="K" ); diff --git a/src/spicelib/devices/adms/psp102/adms3va/PSP102_macrodefs.include b/src/spicelib/devices/adms/psp102/adms3va/PSP102_macrodefs.include new file mode 100644 index 000000000..f9e443db7 --- /dev/null +++ b/src/spicelib/devices/adms/psp102/adms3va/PSP102_macrodefs.include @@ -0,0 +1,250 @@ +//====================================================================================== +//====================================================================================== +// Filename: PSP102_macrodefs.include +//====================================================================================== +//====================================================================================== +// +// (c) Copyright 2007, All Rights Reserved, NXP Semiconductors +// +// +// Version: 102.1, April 2007 (Simkit 2.5) +// +//====================================================================================== +//====================================================================================== +// +// Further information can be found in the file readme.txt +// + + +///////////////////////////////////////////// +// +// Macros and constants used in PSP +// +///////////////////////////////////////////// + +// Explicit Gmin +`define GMIN 1E-15 + +`define PMOS -1 +`define NMOS +1 + +// Some functions +`define MINA(x,y,a) 0.5*((x)+(y)-sqrt(((x)-(y))*((x)-(y))+(a))) +`define MAXA(x,y,a) 0.5*((x)+(y)+sqrt(((x)-(y))*((x)-(y))+(a))) + +// Physical constants +`define EPSOX 3.453E-11 +`define QMN 5.951993 +`define QMP 7.448711 + +// Other constants (PSP-mos) +`define DELTA1 0.02 +`define invSqrt2 7.0710678118654746e-01 +`define oneSixth 1.6666666666666667e-01 +`define exp80 5.5406223843935098e+34 +`define exp160 3.0698496406442424e+69 + +`ifdef NQSmodel + `define Gint GP + `define Bint BP + `define Bjs BS + `define Bjd BD +`else // NQSmodel + `define Gint G + `define Bint B + `define Bjs B + `define Bjd B +`endif // NQSModel + +///////////////////////////////////////////////////////////////////////////// +// +// Macro definitions. +// +// Note that because at present locally scoped variables +// can only be in named blocks, the intermediate variables +// used in the macros below must be explicitly declared +// as variables in the main code. +// +///////////////////////////////////////////////////////////////////////////// + + +// sigma function used in surface potential and other calculations +// (one call uses expressions for arguments so parentheses +// around the arguments in the expressions are necessary) +`define sigma(a,c,tau,eta,y) \ +nu = (a) + (c); \ +mu = nu * nu / (tau) + 0.5 * ((c) * (c)) - (a); \ +y = (eta) + (a) * nu / (mu + (nu / mu) * (c) * ((c) * (c) * `oneThird - (a))); + + +// modified version of sigma, which takes 4 arguments +`define sigma2(a,b,c,tau,eta,y) \ +nu = (a) + (c); \ +if (abs(tau) < 1e-120) begin /*sometimes tau is extremely small...*/\ + y = (eta); \ +end else begin \ + mu = (nu) * (nu) / (tau) + 0.5 * ((c) * (c)) - (a) * (b); \ + y = (eta) + (a) * nu / (mu + (nu / mu) * (c) * ((c) * (c) * `oneThird - (a) * (b))); \ +end + +// +// sp_s surface potential calculation +// +`define sp_s(sp,xg,xn,delta) \ +if (abs(xg) <= margin) begin \ + SP_S_temp1 = inv_xi * inv_xi * `oneSixth * `invSqrt2; \ + sp = xg * inv_xi * (1.0 + xg * (1.0 - (delta)) * Gf * SP_S_temp1); \ +end else begin \ + if (xg < -margin) begin \ + SP_S_yg = -xg; \ + SP_S_ysub = 1.25 * (SP_S_yg * inv_xi); \ + SP_S_eta = 0.5 * (SP_S_ysub + 10 - sqrt((SP_S_ysub - 6.0) * (SP_S_ysub - 6.0) + 64.0)); \ + SP_S_temp = SP_S_yg - SP_S_eta; \ + SP_S_a = SP_S_temp * SP_S_temp + Gf2*(SP_S_eta + 1.0);\ + SP_S_c = 2.0 * SP_S_temp - Gf2; \ + SP_S_tau = -SP_S_eta + ln(SP_S_a * inv_Gf2); \ + `sigma(SP_S_a, SP_S_c, SP_S_tau, SP_S_eta, SP_S_y0) \ + `expl_high(SP_S_y0, SP_S_delta0) \ + SP_S_delta1 = 1.0 / SP_S_delta0; \ + SP_S_temp = 1.0 / (2.0 + SP_S_y0 * SP_S_y0); \ + SP_S_xi0 = SP_S_y0 * SP_S_y0 * SP_S_temp; \ + SP_S_xi1 = 4.0 * (SP_S_y0 * SP_S_temp * SP_S_temp); \ + SP_S_xi2 = (8.0 * SP_S_temp - 12.0 * SP_S_xi0) * SP_S_temp * SP_S_temp; \ + SP_S_temp = SP_S_yg - SP_S_y0; \ + SP_S_temp1 = (delta) * SP_S_delta1; \ + SP_S_pC = 2.0 * SP_S_temp + Gf2 * (SP_S_delta0 - 1.0 - SP_S_temp1 + (delta) * (1.0 - SP_S_xi1)); \ + SP_S_qC = SP_S_temp * SP_S_temp - Gf2 * (SP_S_delta0 - SP_S_y0 - 1.0 + SP_S_temp1 + (delta) * (SP_S_y0 - 1.0 - SP_S_xi0)); \ + SP_S_temp = 2.0 - Gf2 * (SP_S_delta0 + SP_S_temp1 - (delta) * SP_S_xi2); \ + SP_S_temp = SP_S_pC * SP_S_pC - 2.0 * (SP_S_qC * SP_S_temp); \ + sp = -SP_S_y0 - 2.0 * (SP_S_qC / (SP_S_pC + sqrt(SP_S_temp))); \ + end else begin \ + SP_xg1 = 1.0 / (x1 + Gf * 7.324648775608221e-001); \ + SP_S_A_fac= (xi * x1 * SP_xg1 - 1.0) * SP_xg1; \ + SP_S_xbar = xg * inv_xi * (1.0 + SP_S_A_fac * xg); \ + `expl_low(-SP_S_xbar, SP_S_temp) \ + SP_S_w = 1.0 - SP_S_temp; \ + SP_S_x1 = xg + Gf2 * 0.5 - Gf * sqrt(xg + Gf2 * 0.25 - SP_S_w); \ + SP_S_bx = (xn) + 3.0; \ + SP_S_eta = `MINA(SP_S_x1, SP_S_bx, 5.0) - 0.5 * (SP_S_bx - sqrt(SP_S_bx * SP_S_bx + 5.0)); \ + SP_S_temp = xg - SP_S_eta; \ + SP_S_temp1= exp(-SP_S_eta); \ + SP_S_temp2= 1.0 / (2.0 + SP_S_eta * SP_S_eta); \ + SP_S_xi0 = SP_S_eta * SP_S_eta * SP_S_temp2; \ + SP_S_xi1 = 4.0 * (SP_S_eta * SP_S_temp2 * SP_S_temp2); \ + SP_S_xi2 = (8.0 * SP_S_temp2 - 12.0 * SP_S_xi0) * SP_S_temp2 * SP_S_temp2; \ + SP_S_a = max(1.0e-40, SP_S_temp * SP_S_temp - Gf2 * (SP_S_temp1 + SP_S_eta - 1.0 - (delta) * (SP_S_eta + 1.0 + SP_S_xi0))); \ + SP_S_b = 1.0 - 0.5 * (Gf2 * (SP_S_temp1 - (delta) * SP_S_xi2)); \ + SP_S_c = 2.0 * SP_S_temp + Gf2 * (1.0 - SP_S_temp1 - (delta) * (1.0 + SP_S_xi1)); \ + SP_S_tau = (xn) - SP_S_eta + ln(SP_S_a / Gf2); \ + `sigma2(SP_S_a, SP_S_b, SP_S_c, SP_S_tau, SP_S_eta, SP_S_x0) \ + if (SP_S_x0 < `se05) begin \ + SP_S_delta0 = exp(SP_S_x0); \ + SP_S_delta1 = 1.0 / SP_S_delta0; \ + SP_S_delta0 = (delta) * SP_S_delta0; \ + end else begin \ + if (SP_S_x0 > (xn) - `se05) begin \ + SP_S_delta0 = exp(SP_S_x0 - (xn)); \ + SP_S_delta1 = (delta) / SP_S_delta0; \ + end else begin \ + SP_S_delta0 = `ke05 / `P3((xn) - SP_S_x0 - `se05); \ + SP_S_delta1 = `ke05 / `P3(SP_S_x0 - `se05); \ + end \ + end \ + SP_S_temp = 1.0 / (2.0 + SP_S_x0 * SP_S_x0); \ + SP_S_xi0 = SP_S_x0 * SP_S_x0 * SP_S_temp; \ + SP_S_xi1 = 4.0 * (SP_S_x0 * SP_S_temp * SP_S_temp); \ + SP_S_xi2 = (8.0 * SP_S_temp - 12.0 * SP_S_xi0) * SP_S_temp * SP_S_temp; \ + SP_S_temp = xg - SP_S_x0; \ + SP_S_pC = 2.0 * SP_S_temp + Gf2 * (1.0 - SP_S_delta1 + SP_S_delta0 - (delta) * (1.0 + SP_S_xi1)); \ + SP_S_qC = SP_S_temp * SP_S_temp - Gf2 * (SP_S_delta1 + SP_S_x0 - 1.0 + SP_S_delta0 - (delta) * (SP_S_x0 + 1.0 + SP_S_xi0)); \ + SP_S_temp = 2.0 - Gf2 * (SP_S_delta1 + SP_S_delta0 - (delta) * SP_S_xi2); \ + SP_S_temp = SP_S_pC * SP_S_pC - 2.0 * (SP_S_qC * SP_S_temp); \ + sp = SP_S_x0 + 2.0 * (SP_S_qC / (SP_S_pC + sqrt(SP_S_temp))); \ + end \ +end + +// +// sp_s_d surface potential calculation at drain (subset of function sp_s) +// +`define sp_s_d(sp,xg,xn,delta) \ +if (abs(xg) <= margin) begin \ + SP_S_temp1 = inv_xi * inv_xi * `oneSixth * `invSqrt2; \ + sp = xg * inv_xi * (1.0 + xg * (1.0 - (delta)) * Gf * SP_S_temp1); \ +end else begin \ + SP_S_bx = (xn) + 3; \ + SP_S_eta = `MINA(SP_S_x1, SP_S_bx, 5.0) - 0.5 * (SP_S_bx - sqrt(SP_S_bx * SP_S_bx + 5.0)); \ + SP_S_temp = xg - SP_S_eta; \ + SP_S_temp1= exp(-SP_S_eta); \ + SP_S_temp2= 1.0 / (2.0 + SP_S_eta * SP_S_eta); \ + SP_S_xi0 = SP_S_eta * SP_S_eta * SP_S_temp2; \ + SP_S_xi1 = 4.0 * (SP_S_eta * SP_S_temp2 * SP_S_temp2); \ + SP_S_xi2 = (8.0 * SP_S_temp2 - 12.0 * SP_S_xi0) * SP_S_temp2 * SP_S_temp2; \ + SP_S_a = max(1.0e-40, SP_S_temp * SP_S_temp - Gf2 * (SP_S_temp1 + SP_S_eta - 1.0 - (delta) * (SP_S_eta + 1.0 + SP_S_xi0))); \ + SP_S_b = 1.0 - 0.5 * (Gf2 * (SP_S_temp1 - (delta) * SP_S_xi2)); \ + SP_S_c = 2.0 * SP_S_temp + Gf2 * (1.0 - SP_S_temp1 - (delta) * (1.0 + SP_S_xi1)); \ + SP_S_tau = (xn) - SP_S_eta + ln(SP_S_a / Gf2); \ + `sigma2(SP_S_a, SP_S_b, SP_S_c, SP_S_tau, SP_S_eta, SP_S_x0) \ + if (SP_S_x0 < `se05) begin \ + SP_S_delta0 = exp(SP_S_x0); \ + SP_S_delta1 = 1.0 / SP_S_delta0; \ + SP_S_delta0 = (delta) * SP_S_delta0; \ + end else begin \ + if (SP_S_x0 > (xn) - `se05) begin \ + SP_S_delta0 = exp(SP_S_x0 - (xn)); \ + SP_S_delta1 = (delta) / SP_S_delta0; \ + end else begin \ + SP_S_delta0 = `ke05 / `P3((xn) - SP_S_x0 - `se05); \ + SP_S_delta1 = `ke05 / `P3(SP_S_x0 - `se05); \ + end \ + end \ + SP_S_temp = 1.0 / (2.0 + SP_S_x0 * SP_S_x0); \ + SP_S_xi0 = SP_S_x0 * SP_S_x0 * SP_S_temp; \ + SP_S_xi1 = 4.0 * (SP_S_x0 * SP_S_temp * SP_S_temp); \ + SP_S_xi2 = (8.0 * SP_S_temp-12.0 * SP_S_xi0) * SP_S_temp * SP_S_temp; \ + SP_S_temp = xg - SP_S_x0; \ + SP_S_pC = 2.0 * SP_S_temp + Gf2 * (1.0 - SP_S_delta1 + SP_S_delta0 - (delta) * (1.0 + SP_S_xi1)); \ + SP_S_qC = SP_S_temp * SP_S_temp - Gf2 * (SP_S_delta1 + SP_S_x0 - 1.0 + SP_S_delta0 - (delta) * (SP_S_x0 + 1.0 + SP_S_xi0)); \ + SP_S_temp = 2.0 - Gf2*(SP_S_delta1+SP_S_delta0-(delta)*SP_S_xi2); \ + SP_S_temp = SP_S_pC * SP_S_pC - 2.0 * (SP_S_qC * SP_S_temp); \ + sp = SP_S_x0 + 2.0 * (SP_S_qC / (SP_S_pC + sqrt(SP_S_temp)));\ +end + +// +// sp_ov surface potential calculation for the overlap regions +// +`define sp_ov(sp,xg) \ +if (abs(xg) <= x_mrg_ov) begin \ + sp = (-(xg) * inv_xi_ov); \ +end else begin \ + if (xg < -x_mrg_ov) begin \ + SP_OV_yg = -xg; \ + SP_OV_z = x1 * SP_OV_yg * inv_xi_ov; \ + SP_OV_eta = 0.5 * (SP_OV_z + 10.0 - sqrt((SP_OV_z - 6.0) * (SP_OV_z - 6.0) + 64.0)); \ + SP_OV_a = (SP_OV_yg - SP_OV_eta) * (SP_OV_yg - SP_OV_eta) + GOV2 * (SP_OV_eta + 1.0); \ + SP_OV_c = 2.0 * (SP_OV_yg - SP_OV_eta) - GOV2; \ + SP_OV_tau = ln(SP_OV_a / GOV2) - SP_OV_eta; \ + `sigma(SP_OV_a, SP_OV_c, SP_OV_tau, SP_OV_eta, SP_OV_y0) \ + SP_OV_D0 = exp(SP_OV_y0); \ + SP_OV_temp = SP_OV_yg - SP_OV_y0; \ + SP_OV_p = 2.0 * SP_OV_temp + GOV2 * (SP_OV_D0 - 1.0); \ + SP_OV_q = SP_OV_temp * SP_OV_temp + GOV2 * (SP_OV_y0 + 1.0 - SP_OV_D0); \ + SP_OV_xi = 1.0 - GOV2 * 0.5 * SP_OV_D0; \ + SP_OV_temp = SP_OV_p * SP_OV_p - 4.0 * (SP_OV_xi * SP_OV_q); \ + SP_OV_w = 2.0 * (SP_OV_q / (SP_OV_p + sqrt(SP_OV_temp))); \ + sp = -(SP_OV_y0 + SP_OV_w); \ + end else begin \ + SP_OV_Afac = (xi_ov * x1 * inv_xg1 - 1.0) * inv_xg1; \ + SP_OV_xbar = xg * inv_xi_ov * (1.0 + SP_OV_Afac * xg); \ + `expl_low(-SP_OV_xbar, SP_OV_temp) \ + SP_OV_w = 1.0 - SP_OV_temp; \ + SP_OV_x0 = xg + GOV2 * 0.5 - GOV * sqrt(xg + GOV2 * 0.25 - SP_OV_w); \ + `expl_low(-SP_OV_x0, SP_OV_D0) \ + SP_OV_p = 2.0 * (xg - SP_OV_x0) + GOV2 * (1 - SP_OV_D0); \ + SP_OV_q = (xg - SP_OV_x0) * (xg - SP_OV_x0) - GOV2 * (SP_OV_x0 - 1.0 + SP_OV_D0); \ + SP_OV_xi = 1.0 - GOV2 * 0.5 * SP_OV_D0; \ + SP_OV_temp = SP_OV_p * SP_OV_p - 4.0 * (SP_OV_xi * SP_OV_q); \ + SP_OV_u = 2.0 * (SP_OV_q / (SP_OV_p + sqrt(SP_OV_temp))); \ + sp = SP_OV_x0 + SP_OV_u; \ + end \ + sp = -sp; \ +end diff --git a/src/spicelib/devices/adms/psp102/adms3va/PSP102_module.include b/src/spicelib/devices/adms/psp102/adms3va/PSP102_module.include new file mode 100644 index 000000000..f1756a185 --- /dev/null +++ b/src/spicelib/devices/adms/psp102/adms3va/PSP102_module.include @@ -0,0 +1,2358 @@ +`undef P +`define P(txt) (*txt*) +//====================================================================================== +//====================================================================================== +// Filename: PSP102_module.include +//====================================================================================== +//====================================================================================== +// +// (c) Copyright 2007, All Rights Reserved, NXP Semiconductors +// +// +// Version: 102.1, April 2007 (Simkit 2.5) +// +//====================================================================================== +//====================================================================================== +// +// Further information can be found in the file readme.txt +// + + // Node definitions + inout D, G, S, B; + electrical D; + electrical G; + electrical S; + electrical B; + + // Extra internal nodes for correlated drain and gate noise + electrical NOI; + electrical NOI2; + + // Extra branches for correlated drain and gate noise + branch (NOI) NOII; + branch (NOI) NOIR; + branch (NOI) NOIC; + +`ifdef NQSmodel + // Internal nodes for gate and bulk resistors + electrical GP; + electrical BP; + electrical BI; + electrical BS; + electrical BD; + + // Internal nodes for spline collocation + electrical INT1; + electrical INT2; + electrical INT3; + electrical INT4; + electrical INT5; + electrical INT6; + electrical INT7; + electrical INT8; + electrical INT9; + + branch(INT1) SPLINE1; + branch(INT2) SPLINE2; + branch(INT3) SPLINE3; + branch(INT4) SPLINE4; + branch(INT5) SPLINE5; + branch(INT6) SPLINE6; + branch(INT7) SPLINE7; + branch(INT8) SPLINE8; + branch(INT9) SPLINE9; + + branch(INT1) RES1; + branch(INT2) RES2; + branch(INT3) RES3; + branch(INT4) RES4; + branch(INT5) RES5; + branch(INT6) RES6; + branch(INT7) RES7; + branch(INT8) RES8; + branch(INT9) RES9; + +`endif // NQSmodel + + ////////////////////////// + // + // Model parameters + // + ////////////////////////// + +`ifdef LocalModel + /////////////////////////////////////////////////// + // PSP local model parameters + /////////////////////////////////////////////////// + + // Special model parameters, some are also simulator global variables + (*info="Model level", unit="" *) parameter real LEVEL = 102 ; + (*info="Channel type parameter, +1=NMOS -1=PMOS", unit="" *) parameter real TYPE = 1.0 `from( -1.0,1.0 ); + (*info="nominal (reference) temperature", unit="C" *) parameter real TR = 21.0 `from( -273.0,inf ); + + // Switch parameters that turn models or effects on or off + (*info="Flag for gate current, 0=turn off IG", unit="" *) parameter real SWIGATE = 0.0 `from( 0.0,1.0 ); + (*info="Flag for impact ionization current, 0=turn off II", unit="" *) parameter real SWIMPACT = 0.0 `from( 0.0,1.0 ); + (*info="Flag for GIDL current, 0=turn off IGIDL", unit="" *) parameter real SWGIDL = 0.0 `from( 0.0,1.0 ); + (*info="Flag for juncap, 0=turn off juncap", unit="" *) parameter real SWJUNCAP = 0.0 `from( 0.0,3.0 ); + (*info="Quantum-mechanical correction factor", unit="" *) parameter real QMC = 1.0 `from( 0.0,inf ); + + // Process parameters + (*info="Flatband voltage at TR", unit="V" *) parameter real VFB = -1.0 ; + (*info="Temperature dependence of VFB", unit="V/K" *) parameter real STVFB = 5.0e-4 ; + (*info="Gate oxide thickness", unit="m" *) parameter real TOX = 2.0e-09 `from( 1e-10,inf ); + (*info="Effective substrate doping", unit="m^-3" *) parameter real NEFF = 5.0e+23 `from( 1e20,1e26 ); + (*info="Effective doping bias-dependence parameter", unit="V" *) parameter real VNSUB = 0.0 ; + (*info="Effective doping bias-dependence parameter", unit="V" *) parameter real NSLP = 0.05 `from( 1e-3,inf ); + (*info="Effective doping bias-dependence parameter", unit="V^-1" *) parameter real DNSUB = 0.0 `from( 0.0,1.0 ); + (*info="Offset parameter for PHIB", unit="V" *) parameter real DPHIB = 0.0 ; + (*info="Gate poly-silicon doping", unit="m^-3" *) parameter real NP = 1.0e+26 `from( 0.0,inf ); + (*info="Interface states factor", unit="" *) parameter real CT = 0.0 `from( 0.0,inf ); + (*info="Overlap oxide thickness", unit="m" *) parameter real TOXOV = 2.0e-09 `from( 1e-10,inf ); + (*info="Effective doping of overlap region", unit="m^-3" *) parameter real NOV = 5.0e+25 `from( 1e20,1e27 ); + + // DIBL parameters + (*info="DIBL-parameter", unit="V^-1" *) parameter real CF = 0.0 `from( 0.0,inf ); + (*info="Back bias dependence of CF", unit="V^-1" *) parameter real CFB = 0.0 `from( 0.0,1.0 ); + + // Mobility parameters + (*info="Channel aspect ratio times zero-field mobility", unit="m^2/V/s" *) parameter real BETN = 7e-2 `from( 0.0,inf ); + (*info="Temperature dependence of BETN", unit="" *) parameter real STBET = 1.0 ; + (*info="Mobility reduction coefficient at TR", unit="m/V" *) parameter real MUE = 0.5 `from( 0.0,inf ); + (*info="Temperature dependence of MUE", unit="" *) parameter real STMUE = 0.0 ; + (*info="Mobility reduction exponent at TR", unit="" *) parameter real THEMU = 1.5 `from( 0.0,inf ); + (*info="Temperature dependence of THEMU", unit="" *) parameter real STTHEMU = 1.5 ; + (*info="Coulomb scattering parameter at TR", unit="" *) parameter real CS = 0.0 `from( 0.0,inf ); + (*info="Temperature dependence of CS", unit="" *) parameter real STCS = 0.0 ; + (*info="Non-universality factor", unit="V^-1" *) parameter real XCOR = 0.0 `from( 0.0,inf ); + (*info="Temperature dependence of XCOR", unit="" *) parameter real STXCOR = 0.0 ; + (*info="Effective field parameter", unit="" *) parameter real FETA = 1.0 `from( 0.0,inf ); + + // Series-resistance parameters (for resistance modeling as part of intrinsic mobility reduction) + (*info="Series resistance at TR", unit="Ohm" *) parameter real RS = 30 `from( 0.0,inf ); + (*info="Temperature dependence of RS", unit="" *) parameter real STRS = 1.0 ; + (*info="Back-bias dependence of series resistance", unit="V^-1" *) parameter real RSB = 0.0 `from( -0.5,1.0 ); + (*info="Gate-bias dependence of series resistance", unit="V^-1" *) parameter real RSG = 0.0 `from( -0.5,inf ); + + // Velocity saturation parameters + (*info="Velocity saturation parameter at TR", unit="V^-1" *) parameter real THESAT = 1.0 `from( 0.0,inf ); + (*info="Temperature dependence of THESAT", unit="" *) parameter real STTHESAT = 1.0 ; + (*info="Back-bias dependence of velocity saturation", unit="V^-1" *) parameter real THESATB = 0.0 `from( -0.5,1.0 ); + (*info="Gate-bias dependence of velocity saturation", unit="V^-1" *) parameter real THESATG = 0.0 `from( -0.5,inf ); + + // Saturation voltage parameters + (*info="Linear/saturation transition factor", unit="" *) parameter real AX = 3.0 `from( 2.0,inf ); + + // Channel length modulation (CLM) parameters + (*info="CLM pre-factor", unit="" *) parameter real ALP = 0.01 `from( 0.0,inf ); + (*info="CLM enhancement factor above threshold", unit="V" *) parameter real ALP1 = 0.00 `from( 0.0,inf ); + (*info="CLM enhancement factor below threshold", unit="V^-1" *) parameter real ALP2 = 0.00 `from( 0.0,inf ); + (*info="CLM logarithm dependence factor", unit="V" *) parameter real VP = 0.05 `from( 1e-10,inf ); + + // Impact ionization (II) parameters + (*info="Impact-ionization pre-factor", unit="" *) parameter real A1 = 1.0 `from( 0.0,inf ); + (*info="Impact-ionization exponent at TR", unit="V" *) parameter real A2 = 10.0 `from( 0.0,inf ); + (*info="Temperature dependence of A2", unit="V" *) parameter real STA2 = 0.0 ; + (*info="Saturation-voltage dependence of impact-ionization", unit="" *) parameter real A3 = 1.0 `from( 0.0,inf ); + (*info="Back-bias dependence of impact-ionization", unit="V^-0.5" *) parameter real A4 = 0.0 `from( 0.0,inf ); + + // Gate current parameters + (*info="Gate tunnelling energy adjustment", unit="" *) parameter real GCO = 0.0 `from( -10.0,10.0 ); + (*info="Gate channel current pre-factor", unit="A" *) parameter real IGINV = 0.0 `from( 0.0,inf ); + (*info="Gate overlap current pre-factor", unit="A" *) parameter real IGOV = 0.0 `from( 0.0,inf ); + (*info="Temperature dependence of IGINV and IGOV", unit="" *) parameter real STIG = 2.0 ; + (*info="Gate current slope factor", unit="" *) parameter real GC2 = 0.375 `from( 0.0,10.0 ); + (*info="Gate current curvature factor", unit="" *) parameter real GC3 = 0.063 `from( -2.0,2.0 ); + (*info="Tunnelling barrier height", unit="V" *) parameter real CHIB = 3.1 `from( 1.0,inf ); + + // Gate Induced Drain/Source Leakage (GIDL) parameters + (*info="GIDL pre-factor", unit="A/V^3" *) parameter real AGIDL = 0.0 `from( 0.0,inf ); + (*info="GIDL probability factor at TR", unit="V" *) parameter real BGIDL = 41.0 `from( 0.0,inf ); + (*info="Temperature dependence of BGIDL", unit="V/K" *) parameter real STBGIDL = 0.0 ; + (*info="Back-bias dependence of GIDL", unit="" *) parameter real CGIDL = 0.0 ; + + // Charge model parameters + (*info="Oxide capacitance for intrinsic channel", unit="F" *) parameter real COX = 1.0e-14 `from( 0.0,inf ); + (*info="Oxide capacitance for gate-drain/source overlap", unit="F" *) parameter real CGOV = 1.0e-15 `from( 0.0,inf ); + (*info="Oxide capacitance for gate-bulk overlap", unit="F" *) parameter real CGBOV = 0.0 `from( 0.0,inf ); + (*info="Outer fringe capacitance", unit="F" *) parameter real CFR = 0.0 `from( 0.0,inf ); + + // Noise parameters + (*info="Thermal noise coefficient", unit="" *) parameter real FNT = 1.0 `from( 0.0,inf ); + (*info="First coefficient of flicker noise", unit="V^-1/m^4" *) parameter real NFA = 8.0e+22 `from( 0.0,inf ); + (*info="Second coefficient of flicker noise", unit="V^-1/m^2" *) parameter real NFB = 3.0e+07 `from( 0.0,inf ); + (*info="Third coefficient of flicker noise", unit="V^-1" *) parameter real NFC = 0.0 `from( 0.0,inf ); +`ifdef NQSmodel + + // NQS parameters + (*info="Flag for NQS, 0=off, 1, 2, 3, 5, or 9=number of collocation points", unit="" *) parameter real SWNQS = 0.0 `from( 0.0,9.0 ); + (*info="Relative mobility for NQS modelling" *) parameter real MUNQS = 1.0 `from( 0.0,inf ); + (*info="Gate resistance", unit="Ohm" *) parameter real RG = 1.0e-3 `from( 1.0e-6,inf ); + (*info="Bulk resistance between node BP and BI", unit="Ohm" *) parameter real RBULK = 1.0e-3 `from( 1.0e-6,inf ); + (*info="Well resistance between node BI and B", unit="Ohm" *) parameter real RWELL = 1.0e-3 `from( 1.0e-6,inf ); + (*info="Source-side bulk resistance between node BI and BS", unit="Ohm" *) parameter real RJUNS = 1.0e-3 `from( 1.0e-6,inf ); + (*info="Drain-side bulk resistance between node BI and BD", unit="Ohm" *) parameter real RJUND = 1.0e-3 `from( 1.0e-6,inf ); +`endif // NQSmodel + + // JUNCAP Parameters + (*info="reference temperature", unit="C" *) parameter real TRJ = 21 `from(`TRJ_cliplow,inf); + `include "JUNCAP200_parlist.include" + + // Other parameters + (*info="Temperature offset w.r.t. ambient temperature", unit="K" *) parameter real DTA = 0.0 ; + + // Instance parameters + (*type="instance", info="Bottom area of source junction", unit="m^2" *) parameter real ABSOURCE = 1e-12 `from(`AB_cliplow,inf); + (*type="instance", info="STI-edge length of source junction", unit="m" *) parameter real LSSOURCE = 1e-6 `from(`LS_cliplow,inf); + (*type="instance", info="Gate-edge length of source junction", unit="m" *) parameter real LGSOURCE = 1e-6 `from(`LG_cliplow,inf); + (*type="instance", info="Bottom area of drain junction", unit="m^2" *) parameter real ABDRAIN = 1e-12 `from(`AB_cliplow,inf); + (*type="instance", info="STI-edge length of drain junction", unit="m" *) parameter real LSDRAIN = 1e-6 `from(`LS_cliplow,inf); + (*type="instance", info="Gate-edge length of drain junction", unit="m" *) parameter real LGDRAIN = 1e-6 `from(`LG_cliplow,inf); + (*type="instance", info="Bottom area of source junction", unit="m^2" *) parameter real AS = 1E-12 `from(`AB_cliplow,inf); + (*type="instance", info="Perimeter of source junction", unit="m" *) parameter real PS = 1E-6 `from(`LS_cliplow,inf); + (*type="instance", info="Bottom area of drain junction", unit="m^2" *) parameter real AD = 1E-12 `from(`AB_cliplow,inf); + (*type="instance", info="Perimeter of drain junction", unit="m" *) parameter real PD = 1E-6 `from(`LS_cliplow,inf); + (*type="instance", info="Gate-edge length of source/drain junction", unit="m" *) parameter real JW = 1E-6 `from(`LG_cliplow,inf); + (*type="instance", info="Number of devices in parallel", unit="" *) parameter real MULT = 1.0 `from( 0.0,inf ); +`else // LocalModel +`ifdef Binning + + `include "PSP102_binpars.include" + +`else // Binning + /////////////////////////////////////////////////// + // PSP global model parameters + /////////////////////////////////////////////////// + + // Special model parameters + (*info="Model level", unit="" *) parameter real LEVEL = 1020 ; + (*info="Channel type parameter, +1=NMOS -1=PMOS", unit="" *) parameter real TYPE = 1.0 `from( -1,1 ); + + // Reference Temperature + (*info="nominal (reference) temperature", unit="C" *) parameter real TR = 21.0 `from( -273.0,inf ); + + // Switch parameters that turn models or effects on or off + (*info="Flag for gate current, 0=turn off IG", unit="" *) parameter real SWIGATE = 0.0 `from( 0.0,1.0 ); + (*info="Flag for impact ionization current, 0=turn off II", unit="" *) parameter real SWIMPACT = 0.0 `from( 0.0,1.0 ); + (*info="Flag for GIDL current, 0=turn off IGIDL", unit="" *) parameter real SWGIDL = 0.0 `from( 0.0,1.0 ); + (*info="Flag for juncap, 0=turn off juncap", unit="" *) parameter real SWJUNCAP = 0.0 `from( 0.0,3.0 ); + (*info="Quantum-mechanical correction factor", unit="" *) parameter real QMC = 1.0 `from( 0.0,inf ); + + // Process Parameters + (*info="Geom. independent difference between actual and programmed gate length", unit="m" *) parameter real LVARO = 0.0 ; + (*info="Length dependence of LVAR", unit="" *) parameter real LVARL = 0.0 ; + (*info="Width dependence of LVAR", unit="" *) parameter real LVARW = 0.0 ; + (*info="Effective channel length reduction per side", unit="m" *) parameter real LAP = 0.0 ; + (*info="Geom. independent difference between actual and programmed field-oxide opening", unit="m" *) parameter real WVARO = 0.0 ; + (*info="Length dependence of WVAR", unit="" *) parameter real WVARL = 0.0 ; + (*info="Width dependence of WVAR", unit="" *) parameter real WVARW = 0.0 ; + (*info="Effective channel width reduction per side", unit="m" *) parameter real WOT = 0.0 ; + (*info="Effective channel length reduction for CV", unit="m" *) parameter real DLQ = 0.0 ; + (*info="Effective channel width reduction for CV", unit="m" *) parameter real DWQ = 0.0 ; + (*info="Geometry-independent flat-band voltage at TR", unit="V" *) parameter real VFBO = -1.0 ; + (*info="Length dependence of flat-band voltage", unit="" *) parameter real VFBL = 0.0 ; + (*info="Width dependence of flat-band voltage", unit="" *) parameter real VFBW = 0.0 ; + (*info="Area dependence of flat-band voltage", unit="" *) parameter real VFBLW = 0.0 ; + (*info="Geometry-independent temperature dependence of VFB", unit="V/K" *) parameter real STVFBO = 5e-4 ; + (*info="Length dependence of temperature dependence of VFB", unit="" *) parameter real STVFBL = 0.0 ; + (*info="Width dependence of temperature dependence of VFB", unit="" *) parameter real STVFBW = 0.0 ; + (*info="Area dependence of temperature dependence of VFB", unit="" *) parameter real STVFBLW = 0.0 ; + (*info="Gate oxide thickness", unit="m" *) parameter real TOXO = 2e-9 `from( 1e-10,inf ); + (*info="Geometry independent substrate doping", unit="m^-3" *) parameter real NSUBO = 3e23 `from( 1e20,inf ); + (*info="Width dependence of background doping NSUBO due to segregation", unit="" *) parameter real NSUBW = 0.0 ; + (*info="Char. length of segregation of background doping NSUBO", unit="m" *) parameter real WSEG = 1e-8 `from( 1e-10,inf ); + (*info="Pocket doping level", unit="m^-3" *) parameter real NPCK = 1e24 `from( 0.0,inf ); + (*info="Width dependence of pocket doping NPCK due to segregation", unit="" *) parameter real NPCKW = 0.0 ; + (*info="Char. length of segregation of pocket doping NPCK", unit="m" *) parameter real WSEGP = 1e-8 `from( 1e-10,inf ); + (*info="Char. length of lateral doping profile", unit="m" *) parameter real LPCK = 1e-8 `from( 1e-10,inf ); + (*info="Width dependence of char. length of lateral doping profile", unit="" *) parameter real LPCKW = 0.0 ; + (*info="First length dependence coefficient for short channel body effect", unit="" *) parameter real FOL1 = 0.0 ; + (*info="Second length dependence coefficient for short channel body effect", unit="" *) parameter real FOL2 = 0.0 ; + (*info="Effective doping bias-dependence parameter", unit="V" *) parameter real VNSUBO = 0.0 ; + (*info="Effective doping bias-dependence parameter", unit="V" *) parameter real NSLPO = 0.05 ; + (*info="Effective doping bias-dependence parameter", unit="V^-1" *) parameter real DNSUBO = 0.0 ; + (*info="Geometry independent offset of PHIB", unit="V" *) parameter real DPHIBO = 0.0 ; + (*info="Length dependence offset of PHIB", unit="V" *) parameter real DPHIBL = 0.0 ; + (*info="Exponent for length dependence of offset of PHIB", unit="" *) parameter real DPHIBLEXP= 1.0 ; + (*info="Width dependence of offset of PHIB", unit="" *) parameter real DPHIBW = 0.0 ; + (*info="Area dependence of offset of PHIB", unit="" *) parameter real DPHIBLW = 0.0 ; + (*info="Geometry-independent gate poly-silicon doping", unit="m^-3" *) parameter real NPO = 1e26 ; + (*info="Length dependence of gate poly-silicon doping", unit="" *) parameter real NPL = 0.0 ; + (*info="Geometry-independent interface states factor", unit="" *) parameter real CTO = 0.0 ; + (*info="Length dependence of interface states factor", unit="" *) parameter real CTL = 0.0 ; + (*info="Exponent for length dependence of interface states factor", unit="" *) parameter real CTLEXP = 1.0 ; + (*info="Width dependence of interface states factor", unit="" *) parameter real CTW = 0.0 ; + (*info="Area dependence of interface states factor", unit="" *) parameter real CTLW = 0.0 ; + (*info="Overlap oxide thickness", unit="m" *) parameter real TOXOVO = 2e-9 `from( 1e-10,inf ); + (*info="Overlap length for gate/drain and gate/source overlap capacitance", unit="m" *) parameter real LOV = 0 `from( 0.0,inf ); + (*info="Effective doping of overlap region", unit="m^-3" *) parameter real NOVO = 5e25 ; + + // DIBL Parameters + (*info="Length dependence of DIBL-parameter", unit="V^-1" *) parameter real CFL = 0.0 ; + (*info="Exponent for length dependence of CF", unit="" *) parameter real CFLEXP = 2.0 ; + (*info="Width dependence of CF", unit="" *) parameter real CFW = 0.0 ; + (*info="Back-bias dependence of CF", unit="V^-1" *) parameter real CFBO = 0.0 ; + + // Mobility Parameters + (*info="Zero-field mobility at TR", unit="m^2/V/s" *) parameter real UO = 5e-2 ; + (*info="Relative mobility decrease due to first lateral profile", unit="" *) parameter real FBET1 = 0.0 ; + (*info="Width dependence of relative mobility decrease due to first lateral profile", unit="" *) parameter real FBET1W = 0.0 ; + (*info="Mobility-related characteristic length of first lateral profile", unit="m" *) parameter real LP1 = 1e-8 `from( 1e-10,inf ); + (*info="Width dependence of mobility-related characteristic length of first lateral profile", unit="" *) parameter real LP1W = 0.0 ; + (*info="Relative mobility decrease due to second lateral profile", unit="" *) parameter real FBET2 = 0.0 ; + (*info="Mobility-related characteristic length of second lateral profile", unit="m" *) parameter real LP2 = 1e-8 `from( 1e-10,inf ); + (*info="First higher-order width scaling coefficient of BETN", unit="" *) parameter real BETW1 = 0.0 ; + (*info="Second higher-order width scaling coefficient of BETN", unit="" *) parameter real BETW2 = 0.0 ; + (*info="Characteristic width for width scaling of BETN", unit="m" *) parameter real WBET = 1e-9 `from( 1e-10,inf ); + (*info="Geometry independent temperature dependence of BETN", unit="" *) parameter real STBETO = 1.0 ; + (*info="Length dependence of temperature dependence of BETN", unit="" *) parameter real STBETL = 0.0 ; + (*info="Width dependence of temperature dependence of BETN", unit="" *) parameter real STBETW = 0.0 ; + (*info="Area dependence of temperature dependence of BETN", unit="" *) parameter real STBETLW = 0.0 ; + (*info="Geometry independent mobility reduction coefficient at TR", unit="m/V" *) parameter real MUEO = 0.5 ; + (*info="Width dependence of mobility reduction coefficient at TR", unit="" *) parameter real MUEW = 0.0 ; + (*info="Temperature dependence of MUE", unit="" *) parameter real STMUEO = 0.0 ; + (*info="Mobility reduction exponent at TR", unit="" *) parameter real THEMUO = 1.5 ; + (*info="Temperature dependence of THEMU", unit="" *) parameter real STTHEMUO = 1.5 ; + (*info="Geometry independent coulomb scattering parameter at TR", unit="" *) parameter real CSO = 0.0 ; + (*info="Length dependence of CS", unit="" *) parameter real CSL = 0.0 ; + (*info="Exponent for length dependence of CS", unit="" *) parameter real CSLEXP = 0.0 ; + (*info="Width dependence of CS", unit="" *) parameter real CSW = 0.0 ; + (*info="Area dependence of CS", unit="" *) parameter real CSLW = 0.0 ; + (*info="Temperature dependence of CS", unit="" *) parameter real STCSO = 0.0 ; + (*info="Geometry independent non-universality parameter", unit="V^-1" *) parameter real XCORO = 0.0 ; + (*info="Length dependence of non-universality parameter", unit="" *) parameter real XCORL = 0.0 ; + (*info="Width dependence of non-universality parameter", unit="" *) parameter real XCORW = 0.0 ; + (*info="Area dependence of non-universality parameter", unit="" *) parameter real XCORLW = 0.0 ; + (*info="Temperature dependence of XCOR", unit="" *) parameter real STXCORO = 0.0 ; + (*info="Effective field parameter", unit="" *) parameter real FETAO = 1.0 ; + + // Series Resistance + (*info="Source/drain series resistance for 1 um wide channel at TR", unit="Ohm" *) parameter real RSW1 = 2.5e3 ; + (*info="Higher-order width scaling of RS", unit="" *) parameter real RSW2 = 0.0 ; + (*info="Temperature dependence of RS", unit="" *) parameter real STRSO = 1.0 ; + (*info="Back-bias dependence of series resistance", unit="V^-1" *) parameter real RSBO = 0.0 ; + (*info="Gate-bias dependence of series resistance", unit="V^-1" *) parameter real RSGO = 0.0 ; + + // Velocity Saturation + (*info="Geometry independent velocity saturation parameter at TR", unit="V^-1" *) parameter real THESATO = 0.0 ; + (*info="Length dependence of THESAT", unit="V^-1" *) parameter real THESATL = 0.05 ; + (*info="Exponent for length dependence of THESAT", unit="" *) parameter real THESATLEXP= 1.0 ; + (*info="Width dependence of velocity saturation parameter", unit="" *) parameter real THESATW = 0.0 ; + (*info="Area dependence of velocity saturation parameter", unit="" *) parameter real THESATLW = 0.0 ; + (*info="Geometry independent temperature dependence of THESAT", unit="" *) parameter real STTHESATO= 1.0 ; + (*info="Length dependence of temperature dependence of THESAT", unit="" *) parameter real STTHESATL= 0.0 ; + (*info="Width dependence of temperature dependence of THESAT", unit="" *) parameter real STTHESATW= 0.0 ; + (*info="Area dependence of temperature dependence of THESAT", unit="" *) parameter real STTHESATLW= 0.0 ; + (*info="Back-bias dependence of velocity saturation", unit="V^-1" *) parameter real THESATBO = 0.0 ; + (*info="Gate-bias dependence of velocity saturation", unit="V^-1" *) parameter real THESATGO = 0.0 ; + + // Saturation Voltage + (*info="Geometry independent linear/saturation transition factor", unit="" *) parameter real AXO = 18 ; + (*info="Length dependence of AX", unit="" *) parameter real AXL = 0.4 `from( 0.0,inf ); + + // Channel Length Modulation + (*info="Length dependence of ALP", unit="" *) parameter real ALPL = 5e-4 ; + (*info="Exponent for length dependence of ALP", unit="" *) parameter real ALPLEXP = 1.0 ; + (*info="Width dependence of ALP", unit="" *) parameter real ALPW = 0.0 ; + (*info="Length dependence of CLM enhancement factor above threshold", unit="V" *) parameter real ALP1L1 = 0.0 ; + (*info="Exponent for length dependence of ALP1", unit="" *) parameter real ALP1LEXP = 0.5 ; + (*info="Second_order length dependence of ALP1", unit="" *) parameter real ALP1L2 = 0.0 `from( 0.0,inf ); + (*info="Width dependence of ALP1", unit="" *) parameter real ALP1W = 0.0 ; + (*info="Length dependence of CLM enhancement factor below threshold", unit="V^-1" *) parameter real ALP2L1 = 0.0 ; + (*info="Exponent for length dependence of ALP2", unit="" *) parameter real ALP2LEXP = 0.5 ; + (*info="Second_order length dependence of ALP2", unit="" *) parameter real ALP2L2 = 0.0 `from( 0.0,inf ); + (*info="Width dependence of ALP2", unit="" *) parameter real ALP2W = 0.0 ; + (*info="CLM logarithmic dependence parameter", unit="V" *) parameter real VPO = 0.05 ; + + // Weak-avalanche parameters + (*info="Geometry independent impact-ionization pre-factor", unit="" *) parameter real A1O = 1.0 ; + (*info="Length dependence of A1", unit="" *) parameter real A1L = 0.0 ; + (*info="Width dependence of A1", unit="" *) parameter real A1W = 0.0 ; + (*info="Impact-ionization exponent at TR", unit="V" *) parameter real A2O = 10 ; + (*info="Temperature dependence of A2", unit="V" *) parameter real STA2O = 0.0 ; + (*info="Geometry independent saturation-voltage dependence of II", unit="" *) parameter real A3O = 1.0 ; + (*info="Length dependence of A3", unit="" *) parameter real A3L = 0.0 ; + (*info="Width dependence of A3", unit="" *) parameter real A3W = 0.0 ; + (*info="Geometry independent back-bias dependence of II", unit="V^-0.5" *) parameter real A4O = 0.0 ; + (*info="Length dependence of A4", unit="" *) parameter real A4L = 0.0 ; + (*info="Width dependence of A4", unit="" *) parameter real A4W = 0.0 ; + + // Gate current parameters + (*info="Gate tunnelling energy adjustment", unit="" *) parameter real GCOO = 0.0 ; + (*info="Gate channel current pre-factor for 1 um^2 channel area", unit="A" *) parameter real IGINVLW = 0.0 ; + (*info="Gate overlap current pre-factor for 1 um wide channel", unit="A" *) parameter real IGOVW = 0.0 ; + (*info="Temperature dependence of IGINV and IGOV", unit="" *) parameter real STIGO = 2.0 ; + (*info="Gate current slope factor", unit="" *) parameter real GC2O = 0.375 ; + (*info="Gate current curvature factor", unit="" *) parameter real GC3O = 0.063 ; + (*info="Tunnelling barrier height", unit="V" *) parameter real CHIBO = 3.1 ; + + // Gate-induced drain leakage parameters + (*info="Width dependence of GIDL pre-factor", unit="A/V^3" *) parameter real AGIDLW = 0.0 ; + (*info="GIDL probability factor at TR", unit="V" *) parameter real BGIDLO = 41 ; + (*info="Temperature dependence of BGIDL", unit="V/K" *) parameter real STBGIDLO = 0.0 ; + (*info="Back-bias dependence of GIDL", unit="" *) parameter real CGIDLO = 0.0 ; + + // Charge Model Parameters + (*info="Oxide capacitance for gate-bulk overlap for 1 um^2 area", unit="F" *) parameter real CGBOVL = 0.0 ; + (*info="Outer fringe capacitance for 1 um wide channel", unit="F" *) parameter real CFRW = 0.0 ; + + // Noise Model Parameters + (*info="Thermal noise coefficient", unit="" *) parameter real FNTO = 1.0 ; + (*info="First coefficient of flicker noise for 1 um^2 channel area", unit="V^-1/m^4" *) parameter real NFALW = 8e22 ; + (*info="Second coefficient of flicker noise for 1 um^2 channel area", unit="V^-1/m^2" *) parameter real NFBLW = 3e7 ; + (*info="Third coefficient of flicker noise for 1 um^2 channel area", unit="V^-1" *) parameter real NFCLW = 0.0 ; + + // Other Parameters + (*info="Temperature offset w.r.t. ambient circuit temperature", unit="K" *) parameter real DTA = 0 ; +`endif // Binning +`ifdef NQSmodel + + // NQS parameters + (*info="Flag for NQS, 0=off, 1, 2, 3, 5, or 9=number of collocation points", unit="" *) parameter real SWNQS = 0.0 `from( 0.0,9.0 ); + (*info="Relative mobility for NQS modelling" *) parameter real MUNQSO = 1.0 ; + (*info="Gate resistance" *) parameter real RGO = 1.0e-3 ; + (*info="Bulk resistance between node BP and BI", unit="Ohm" *) parameter real RBULKO = 1.0e-3 ; + (*info="Well resistance between node BI and B", unit="Ohm" *) parameter real RWELLO = 1.0e-3 ; + (*info="Source-side bulk resistance between node BI and BS", unit="Ohm" *) parameter real RJUNSO = 1.0e-3 ; + (*info="Drain-side bulk resistance between node BI and BD", unit="Ohm" *) parameter real RJUNDO = 1.0e-3 ; +`endif // NQSmodel + + // Stress Model Parameters + (*info="Reference distance beteen OD-edge to poly from one side", unit="m" *) parameter real SAREF = 1.0e-6 `from( 1e-9,inf ); + (*info="Reference distance beteen OD-edge to poly from other side", unit="m" *) parameter real SBREF = 1.0e-6 `from( 1e-9,inf ); + (*info="Width parameter", unit="m" *) parameter real WLOD = 0 ; + (*info="Mobility degradation/enhancement coefficient", unit="m" *) parameter real KUO = 0 ; + (*info="Saturation velocity degradation/enhancement coefficient", unit="m" *) parameter real KVSAT = 0 `from( -1.0,1.0 ); + (*info="Temperature dependence of KUO", unit="" *) parameter real TKUO = 0 ; + (*info="Length dependence of KUO", unit="m^LLODKUO" *) parameter real LKUO = 0 ; + (*info="Width dependence of KUO", unit="m^WLODKUO" *) parameter real WKUO = 0 ; + (*info="Cross-term dependence of KUO", unit="m^(LLODKUO+WLODKUO)" *) parameter real PKUO = 0 ; + (*info="Length parameter for UO stress effect", unit="" *) parameter real LLODKUO = 0 `from( 0.0,inf ); + (*info="Width parameter for UO stress effect", unit="" *) parameter real WLODKUO = 0 `from( 0.0,inf ); + (*info="Threshold shift parameter", unit="Vm" *) parameter real KVTHO = 0 ; + (*info="Length dependence of KVTHO", unit="m^LLODVTH" *) parameter real LKVTHO = 0 ; + (*info="Width dependence of KVTHO", unit="m^WLODVTH" *) parameter real WKVTHO = 0 ; + (*info="Cross-term dependence of KVTHO", unit="m^(LLODVTH+WLODVTH)" *) parameter real PKVTHO = 0 ; + (*info="Length parameter for VTH-stress effect", unit="" *) parameter real LLODVTH = 0 `from( 0.0,inf ); + (*info="Width parameter for VTH-stress effect", unit="" *) parameter real WLODVTH = 0 `from( 0.0,inf ); + (*info="eta0 shift factor related to VTHO change", unit="m" *) parameter real STETAO = 0 ; + (*info="eta0 shift modifaction factor for stress effect", unit="" *) parameter real LODETAO = 1.0 `from( 0.0,inf ); + + // JUNCAP Parameters + (*info="reference temperature", unit="C"*) parameter real TRJ = 21 `from(`TRJ_cliplow,inf); + `include "JUNCAP200_parlist.include" + + // Instance parameters + (*type="instance", info="Design length", unit="m" *) parameter real L = 10e-6 `from( 1e-9,inf ); + (*type="instance", info="Design width", unit="m" *) parameter real W = 10e-6 `from( 1e-9,inf ); + (*type="instance", info="Distance beteen OD-edge to poly from one side", unit="m" *) parameter real SA = 0.0 ; + (*type="instance", info="Distance beteen OD-edge to poly from other side", unit="m" *) parameter real SB = 0.0 ; + (*type="instance", info="Bottom area of source junction", unit="m^2" *) parameter real ABSOURCE = 1E-12 `from(`AB_cliplow,inf); + (*type="instance", info="STI-edge length of source junction", unit="m" *) parameter real LSSOURCE = 1E-6 `from(`LS_cliplow,inf); + (*type="instance", info="Gate-edge length of source junction", unit="m" *) parameter real LGSOURCE = 1E-6 `from(`LG_cliplow,inf); + (*type="instance", info="Bottom area of drain junction", unit="m^2" *) parameter real ABDRAIN = 1E-12 `from(`AB_cliplow,inf); + (*type="instance", info="STI-edge length of drain junction", unit="m" *) parameter real LSDRAIN = 1E-6 `from(`LS_cliplow,inf); + (*type="instance", info="Gate-edge length of drain junction", unit="m" *) parameter real LGDRAIN = 1E-6 `from(`LG_cliplow,inf); + (*type="instance", info="Bottom area of source junction", unit="m^2" *) parameter real AS = 1E-12 `from(`AB_cliplow,inf); + (*type="instance", info="Perimeter of source junction", unit="m" *) parameter real PS = 1E-6 `from(`LS_cliplow,inf); + (*type="instance", info="Bottom area of drain junction", unit="m^2" *) parameter real AD = 1E-12 `from(`AB_cliplow,inf); + (*type="instance", info="Perimeter of drain junction", unit="m" *) parameter real PD = 1E-6 `from(`LS_cliplow,inf); + (*type="instance", info="Number of devices in parallel", unit="" *) parameter real MULT = 1.0 `from( 0.0,inf ); + + ////////////////////////// + // + // Variables + // + ////////////////////////// + + // Variables for geometrical scaling rules + real L_i, W_i, SA_i, SB_i; + real LEN, WEN, iL, iW, delLPS, delWOD, LE, WE, iLE, iWE, Lcv, Wcv, LEcv, WEcv; + +`ifdef Binning + // Auxiliary variables for binning-rules + real iLEWE, iiLE, iiWE, iiLEWE, iiiLEWE; + real iLEcv, iiLEcv, iiWEcv, iiLEWEcv, iiiLEWEcv; + real iLcv, iiLcv, iiWcv, iiLWcv, iiiLWcv; +`else // Binning + // Intermediate variables used for geometry-scaling + real NSUBO_i, WSEG_i, NPCK_i, WSEGP_i, LPCK_i, LOV_i; + real LP1_i, LP2_i, WBET_i, AXL_i, ALP1L2_i, ALP2L2_i; + real NSUB, AA, BB, NSUB0e, NPCKe, LPCKe; + real FBET1e, LP1e, GPE, GWE, tmpx; +`endif // Binning + + // List of local parameters + real VFB, STVFB, TOX, NEFF, VNSUB, NSLP, DNSUB, DPHIB, NP, CT; + real TOXOV, NOV, CF, CFB; + real BETN, STBET, MUE, STMUE, THEMU, STTHEMU, CS, STCS, XCOR, STXCOR, FETA; + real RS, STRS, RSB, RSG; + real THESAT, STTHESAT, THESATB, THESATG; + real AX; + real ALP, ALP1, ALP2, VP; + real A1, A2, STA2, A3, A4; + real GCO, IGINV, IGOV, STIG, GC2, GC3, CHIB; + real AGIDL, BGIDL, STBGIDL, CGIDL; + real COX, CGOV, CGBOV, CFR; + real FNT, NFA, NFB, NFC; +`ifdef NQSmodel + real MUNQS, RG, RBULK, RWELL, RJUNS, RJUND; +`endif // NQSmodel + + // Variables for stress-model + real SAREF_i, SBREF_i, KVSAT_i, LLODKUO_i, WLODKUO_i, LLODVTH_i, WLODVTH_i, LODETAO_i; + real Invsa, Invsb, Invsaref, Invsbref, Kstressu0, rhobeta, rhobetaref, Kstressvth0; + real temp0, templ, tempw, Lx, Wx; +`endif // LocalModel + + // Variables used in electrical equations + real VFB_i, STVFB_i, TOX_i, NEFF_i, VNSUB_i, NSLP_i, DNSUB_i, NP_i, QMC_i, CT_i, TOXOV_i, NOV_i; + real CF_i, CFB_i, DPHIB_i; + real BET_i, STBET_i, MUE_i, STMUE_i, THEMU_i, STTHEMU_i, CS_i, STCS_i, XCOR_i, STXCOR_i, FETA_i; + real RS_i, THER_i, STRS_i, RSB_i, RSG_i; + real THESAT_i, STTHESAT_i, THESATB_i, THESATG_i; + real AX_i, ALP_i, ALP1_i, ALP2_i, VP_i; + real A1_i, A2_i, STA2_i, A3_i, A4_i; + real GCO_i, IGINV_i, IGOV_i, STIG_i, GC2_i, GC3_i, CHIB_i; + real AGIDL_i, BGIDL_i, STBGIDL_i, CGIDL_i; + real COX_i, CGOV_i, CGBOV_i, CFR_i; + real FNT_i, NFA_i, NFB_i, NFC_i; + real TR_i, MULT_i; + + real temp, temp1, temp2, tempM; + real help; + + real TKR, TKD, TKD_sq, dT, rT, rTn; + real phit, inv_phit, Eg, phibFac, CoxPrime, tox_sq; + real delVg, CoxovPrime, GOV, GOV2; + real np, kp, qq, qb0, dphibq, qlim2; + real E_eff0, eta_mu, BCH, BOV, inv_CHIB, GCQ, Dch, Dov; + real tf_bet, tf_mue, tf_cs, tf_xcor, tf_ther, tf_thesat, tf_ig; + real xi_ov, inv_xi_ov, x_mrg_ov, x1, inv_xg1, Vdsat_lim; + real nt, Cox_over_q; + + real phib, sqrt_phib, phix, aphi, bphi, phix1, phix2, G_0, phit1, inv_phit1, alpha_b; + real inv_VP, inv_AX, Sfl_prefac; + + real Vgs, Vgd, Vds, Vsb, Vsbstar; + real Vgb, Vgb1, Vgbstar, Vdb, Vdbstar, Vdsx, Vsbx; + + real Dnsub; + real Igidl, Igisl, Vtovd, Vtovs; + real x_s, sqm, alpha, alpha1, eta_p, phi_inf, za, xitsb, rhob; + real thesat1, wsat, ysat, zsat, r1, r2, dL, GdL, dL1, FdL, GR, Gmob, Gmob_dL, Gvsat, Gvsatinv, QCLM; + real xgm, Voxm, dps, qim, qim1, qim1_1, xgs_ov, xgd_ov, sigVds; + real Ux, xg; + real mu, nu, xn_s, delta_ns; + real Gf, Gf2, inv_Gf2, xi, inv_xi, margin; + real qeff, COX_qm; + + real SP_xg1, SP_S_temp,SP_S_temp1,SP_S_temp2; + real SP_S_yg, SP_S_ysub, SP_S_y0, SP_S_a, SP_S_b, SP_S_c; + real SP_S_bx, SP_S_tau, SP_S_eta, SP_S_delta0, SP_S_delta1; + real SP_S_pC, SP_S_qC, SP_S_A_fac; + real SP_S_x1, SP_S_w, SP_S_xbar, SP_S_x0; + real SP_S_xi0, SP_S_xi1, SP_S_xi2; + real SP_OV_yg, SP_OV_z, SP_OV_eta, SP_OV_a, SP_OV_c; + real SP_OV_tau, SP_OV_D0, SP_OV_y0, SP_OV_xi, SP_OV_temp; + real SP_OV_p, SP_OV_q, SP_OV_w, SP_OV_Afac, SP_OV_xbar; + real SP_OV_x0, SP_OV_u; + + real x_d, x_m, x_ds, Rxcor, delta_1s, xi0s, xi1s, xi2s, xi0d; + real Es, Em, Ed, Ds, Dm, Dd, Ps, xgs, qis, qbs, qbm, Eeffm, Vm; + real Phi_0, Phi_2, asat, Phi_0_2, Phi0_Phi2; + real Vdse, Vdsat, xn_d, k_ds, Udse; + real Mutmp, Phi_sat, delta_nd; + real pC, qC, Pm; + real d0, D_bar, km, x_pm, xi_pd, p_pd, u_pd, q_pd; + real xs_ov, xd_ov, Vovs, Vovd, psi_t; + real zg, delVsat, TP, Dsi, Dgate, u0, u0_div_H, x, xsq, inv_x, ex, inv_ex, Ag, Bg, Sg; + real H, Fj, Fj2; + real N1, Nm1, Delta_N1, Sfl; + real H0, t1, t2, sqt2, r, lc, lcinv2, g_ideal, CGeff, mid, mig, migid, c_igid, sqid, sqig; + real shot_igs, shot_igsx, shot_igd, shot_igdx, shot_iavl; + + real Ids, Iimpact, mavl, Igdov, Igsov, Igc0, igc, igcd_h; + real Igc, Igcd, Igcs, Igb, Igs, Igd; + real Idse, Igbe, Igse, Igde, Igidle, Igisle, Iimpacte; + real QI, QD, QB, QG, Qg, Qd, Qb, Qs, Qgs_ov, Qgd_ov; + real Qfgs, Qfgd, Qgb_ov; + + real arg1, arg2max, arg2mina; + + integer CHNL_TYPE; + +`ifdef NQSmodel + // Variables used in NQS-calculations + real SWNQS_i, MUNQS_i, RG_i, RBULK_i, RWELL_i, RJUNS_i, RJUND_i; + real Qp1_0, Qp2_0, Qp3_0, Qp4_0, Qp5_0, Qp6_0, Qp7_0, Qp8_0, Qp9_0; + real fk1, fk2, fk3, fk4, fk5, fk6, fk7, fk8, fk9; + + real phi_p1, phi_p2, phi_p3; + real phi_p4, phi_p5, phi_p6; + real phi_p7, phi_p8, phi_p9; + + real Qp1, Qp2, Qp3; + real Qp4, Qp5, Qp6; + real Qp7, Qp8, Qp9; + real Qp0, QpN; + + real QG_NQS, QS_NQS, QD_NQS; + real pd, Gp, Gp2, a_factrp, marginp, x_sp, x_dp; + + real dfQi, fQi, dQis, dQis_1, d2Qis, dQbs, dQy, d2Qy, dpsy2; + real ym, inorm, Tnorm, Qb_tmp, QbSIGN; + real r_nqs, vnorm, vnorm_inv; + real NQS_xg1, NQS_yg, NQS_z, NQS_eta, NQS_a, NQS_c, NQS_tau, NQS_D0, NQS_xi, NQS_p; + real NQS_q, NQS_temp, NQS_A_fac, NQS_xbar, NQS_w, NQS_x0, NQS_u, NQS_y0; + real xphi, fk0, thesat2, Fvsat; + real Vrg, Vrbulk, Vrwell, Vrjund, Vrjuns; + real ggate, gbulk, gwell, gjund, gjuns, nt0; + real rgatenoise, rbulknoise, rwellnoise, rjundnoise, rjunsnoise; + real temp3, temp4, temp5, temp6, temp7, temp8, temp9; +`endif // NQSmodel + + // JUNCAP2 variables + `include "JUNCAP200_varlist.include" + real isjunbot, qsjunbot, isjunsti, qsjunsti, isjungat, qsjungat, isjun, qsjun, sjnoise, sjnoisex; + real idjunbot, qdjunbot, idjunsti, qdjunsti, idjungat, qdjungat, idjun, qdjun, djnoise, djnoisex; + real Vjuns, Vjund, VMAXS, VMAXD; + real vbimins, vchs, vfmins, vbbtlims, vbimind, vchd, vfmind, vbbtlimd; + real ABSOURCE_i, LSSOURCE_i, LGSOURCE_i; + real ABDRAIN_i, LSDRAIN_i, LGDRAIN_i, juncapwidth; + + + +`ifdef insideADMS // OPinfo + ///////////////////////////////////////////////////////////////////////////// + // + // Variables for operating point info + // + ///////////////////////////////////////////////////////////////////////////// + + real id_op, is, ig, ib, P_D, facvsb, facvsb0, sig1k; + + (*ask="yes", info="Flag for channel type", unit=""*) real ctype ; + (*ask="yes", info="Flag for source-drain interchange", unit=""*) real sdint ; + + (*ask="yes", info="Total source current", unit="A"*) real ise ; + (*ask="yes", info="Total gate current", unit="A"*) real ige ; + (*ask="yes", info="Total drain current", unit="A"*) real ide ; + (*ask="yes", info="Total bulk current", unit="A"*) real ibe ; + (*ask="yes", info="Drain current, excl. avalanche, tunnel, GISL, GIDL, and junction currents", unit="A"*) real ids ; + (*ask="yes", info="Drain to bulk current", unit="A"*) real idb ; + (*ask="yes", info="Source to bulk current", unit="A"*) real isb ; + (*ask="yes", info="Gate-source tunneling current", unit="A"*) real igs ; + (*ask="yes", info="Gate-drain tunneling current", unit="A"*) real igd ; + (*ask="yes", info="Gate-bulk tunneling current", unit="A"*) real igb ; + (*ask="yes", info="Gate-channel tunneling current (source component)", unit="A"*) real igcs ; + (*ask="yes", info="Gate-channel tunneling current (drain component)", unit="A"*) real igcd ; + (*ask="yes", info="Substrate current due to weak avelanche", unit="A"*) real iavl ; + (*ask="yes", info="Gate-induced source leakage current", unit="A"*) real igisl ; + (*ask="yes", info="Gate-induced drain leakage current", unit="A"*) real igidl ; + + (*ask="yes", info="Total source junction current", unit="A"*) real ijs ; + (*ask="yes", info="Source junction current (bottom component)", unit="A"*) real ijsbot ; + (*ask="yes", info="Source junction current (gate-edge component)", unit="A"*) real ijsgat ; + (*ask="yes", info="Source junction current (STI-edge component)", unit="A"*) real ijssti ; + (*ask="yes", info="Total drain junction current", unit="A"*) real ijd ; + (*ask="yes", info="Drain junction current (bottom component)", unit="A"*) real ijdbot ; + (*ask="yes", info="Drain junction current (gate-edge component)", unit="A"*) real ijdgat ; + (*ask="yes", info="Drain junction current (STI-edge component)", unit="A"*) real ijdsti ; + + (*ask="yes", info="Drain-source voltage", unit="V"*) real vds ; + (*ask="yes", info="Gate-source voltage", unit="V"*) real vgs ; + (*ask="yes", info="Source-bulk voltage", unit="V"*) real vsb ; + (*ask="yes", info="Zero-bias threshold voltage", unit="V"*) real vto ; + (*ask="yes", info="Threshold voltage including back bias effects", unit="V"*) real vts ; + (*ask="yes", info="Threshold voltage including back bias and drain bias effects", unit="V"*) real vth ; + (*ask="yes", info="Effective gate drive voltage including back bias and drain bias effects", unit="V"*) real vgt ; + (*ask="yes", info="Drain saturation voltage at actual bias", unit="V"*) real vdss ; + (*ask="yes", info="Saturation limit", unit="V"*) real vsat ; + + (*ask="yes", info="Transconductance", unit="1/Ohm"*) real gm ; + (*ask="yes", info="Substrate transconductance", unit="1/Ohm"*) real gmb ; + (*ask="yes", info="Output conductance", unit="1/Ohm"*) real gds ; + (*ask="yes", info="Source junction conductance", unit="1/Ohm"*) real gjs ; + (*ask="yes", info="Drain junction conductance", unit="1/Ohm"*) real gjd ; + + (*ask="yes", info="Drain capacitance", unit="F"*) real cdd ; + (*ask="yes", info="Drain-gate capacitance", unit="F"*) real cdg ; + (*ask="yes", info="Drain-source capacitance", unit="F"*) real cds ; + (*ask="yes", info="Drain-bulk capacitance", unit="F"*) real cdb ; + (*ask="yes", info="Gate-drain capacitance", unit="F"*) real cgd ; + (*ask="yes", info="Gate capacitance", unit="F"*) real cgg ; + (*ask="yes", info="Gate-source capacitance", unit="F"*) real cgs ; + (*ask="yes", info="Gate-bulk capacitance", unit="F"*) real cgb ; + (*ask="yes", info="Source-drain capacitance", unit="F"*) real csd ; + (*ask="yes", info="Source-gate capacitance", unit="F"*) real csg ; + (*ask="yes", info="Source capacitance", unit="F"*) real css ; + (*ask="yes", info="Source-bulk capacitance", unit="F"*) real csb ; + (*ask="yes", info="Bulk-drain capacitance", unit="F"*) real cbd ; + (*ask="yes", info="Bulk-gate capacitance", unit="F"*) real cbg ; + (*ask="yes", info="Bulk-source capacitance", unit="F"*) real cbs ; + (*ask="yes", info="Bulk capacitance", unit="F"*) real cbb ; + (*ask="yes", info="Total gate-source overlap capacitance", unit="F"*) real cgsol ; + (*ask="yes", info="Total gate-drain overlap capacitance", unit="F"*) real cgdol ; + + (*ask="yes", info="Total source junction capacitance", unit="F"*) real cjs ; + (*ask="yes", info="Source junction capacitance (bottom component)", unit="F"*) real cjsbot ; + (*ask="yes", info="Source junction capacitance (gate-edge component)", unit="F"*) real cjsgat ; + (*ask="yes", info="Source junction capacitance (STI-edge component)", unit="F"*) real cjssti ; + (*ask="yes", info="Total drain junction capacitance", unit="F"*) real cjd ; + (*ask="yes", info="Drain junction capacitance (bottom component)", unit="F"*) real cjdbot ; + (*ask="yes", info="Drain junction capacitance (gate-edge component)", unit="F"*) real cjdgat ; + (*ask="yes", info="Drain junction capacitance (STI-edge component)", unit="F"*) real cjdsti ; + + (*ask="yes", info="Effective channel width for geometrical models", unit="m"*) real weff ; + (*ask="yes", info="Effective channel length for geometrical models", unit="m"*) real leff ; + (*ask="yes", info="Transistor gain", unit=""*) real u ; + (*ask="yes", info="Small-signal output resistance", unit="Ohm"*) real rout ; + (*ask="yes", info="Equivalent Early voltage", unit="V"*) real vearly ; + (*ask="yes", info="Gain factor", unit="A/V^2"*) real beff ; + (*ask="yes", info="Unity gain frequency at actual bias", unit="Hz"*) real fug ; + + (*ask="yes", info="Flicker noise current density at 1 Hz", unit="A/Hz"*) real sfl ; + (*ask="yes", info="Input-referred RMS white noise voltage density at 1 kHz", unit="V/sqrt(Hz)"*) real sqrtsff ; + (*ask="yes", info="Input-referred RMS white noise voltage density", unit="V/sqrt(Hz)"*) real sqrtsfw ; + (*ask="yes", info="White noise current density", unit="A^2/Hz"*) real sid ; + (*ask="yes", info="Induced gate noise current density at 1 Hz", unit="A^2/Hz"*) real sig ; + (*ask="yes", info="Imaginary part of correlation coefficient between Sig and Sid", unit=""*) real cigid ; + (*ask="yes", info="Cross-over frequency above which white noise is dominant", unit="Hz"*) real fknee ; + (*ask="yes", info="Gate-source current noise spectral density", unit="A^2/Hz"*) real sigs ; + (*ask="yes", info="Gate-drain current noise spectral density", unit="A^2/Hz"*) real sigd ; + (*ask="yes", info="Impact ionization current noise spectral density", unit="A^2/Hz"*) real siavl ; + (*ask="yes", info="Total source junction current noise spectral density", unit="A^2/Hz"*) real ssi ; + (*ask="yes", info="Total drain junction current noise specral density", unit="A^2/Hz"*) real sdi ; +`endif // OPinfo + + ///////////////////////////////////////////////////////////////////////////// + // + // Analog block with all calculations and contribs + // + ///////////////////////////////////////////////////////////////////////////// + + analog begin + + begin : initial_model + // Code independent of bias or instance parameters + // This block needs to be evaluated only once + +`ifdef LocalModel + // Do nothing +`else // LocalModel +`ifdef Binning + // There are no binning parameters that need clipping +`else // Binning + // Clipping of global model parameters + TOX_i = `CLIP_LOW(TOXO, 1e-10); + NSUBO_i = `CLIP_LOW(NSUBO, 1e20); + WSEG_i = `CLIP_LOW(WSEG, 1e-10); + NPCK_i = `CLIP_LOW(NPCK, 0.0); + WSEGP_i = `CLIP_LOW(WSEGP, 1e-10); + LPCK_i = `CLIP_LOW(LPCK, 1e-10); + TOXOV_i = `CLIP_LOW(TOXOVO, 1e-10); + LOV_i = `CLIP_LOW(LOV, 0.0); + LP1_i = `CLIP_LOW(LP1, 1e-10); + LP2_i = `CLIP_LOW(LP2, 1e-10); + WBET_i = `CLIP_LOW(WBET, 1e-10); + AXL_i = `CLIP_LOW(AXL, 0.0); + ALP1L2_i = `CLIP_LOW(ALP1L2, 0.0); + ALP2L2_i = `CLIP_LOW(ALP2L2, 0.0); +`endif // Binning + + KVSAT_i = `CLIP_BOTH(KVSAT, -1.0, 1.0); + LLODKUO_i = `CLIP_LOW(LLODKUO, 0.0); + WLODKUO_i = `CLIP_LOW(WLODKUO, 0.0); + LLODVTH_i = `CLIP_LOW(LLODVTH, 0.0); + WLODVTH_i = `CLIP_LOW(WLODVTH, 0.0); + LODETAO_i = `CLIP_LOW(LODETAO, 0.0); +`endif // LocalModel + + // 4.1 Internal parameters (including temperature scaling) + // (only internal parameters independent on instance parameters + // are calculated in this section) + if (TYPE >= 0) begin + CHNL_TYPE = `NMOS; + end else begin + CHNL_TYPE = `PMOS; + end + + // Transistor temperature + TR_i = `CLIP_LOW(TR, -273); + TKR = `KELVINCONVERSION + TR_i; + TKD = $temperature + DTA; + TKD_sq = TKD * TKD; + dT = TKD - TKR; + rT = TKD / TKR; + rTn = TKR / TKD; + phit = TKD * `KBOL / `QELE; + inv_phit = 1.0 / phit; + + // Local process parameters + Eg = 1.179 - 9.025e-5 * TKD - 3.05e-7 * TKD_sq; + phibFac = (1.045 + 4.5e-4 * TKD) * (0.523 + 1.4e-3 * TKD - 1.48e-6 * TKD_sq) * TKD_sq / 9.0E4; + phibFac = `MAX(phibFac, 1.0E-3); + +`ifdef NQSmodel + // Round SWNQS to nearest allowed value + if (SWNQS < 0.5) begin + SWNQS_i = 0.0; + end else begin + if (SWNQS < 1.5) begin + SWNQS_i = 1.0; + end else begin + if (SWNQS < 2.5) begin + SWNQS_i = 2.0; + end else begin + if (SWNQS < 4.0) begin + SWNQS_i = 3.0; + end else begin + if (SWNQS < 7.0) begin + SWNQS_i = 5.0; + end else begin + SWNQS_i = 9.0; + end + end + end + end + end + inorm = 1.0e-12; + r_nqs = 1.0e+3; + vnorm = 10.0; + vnorm_inv = 1.0 / vnorm; + + nt0 = 4 * `KBOL * TKD; // parameter for white noise of parasitic resistances +`endif // NQSmodel + + // JUNCAP2 + `include "JUNCAP200_InitModel.include" + + end // initial_model + + begin : initial_instance + // Code independent of bias, but dependent on instance parameters, + // (including code dependent on parameters which could IN PRINCIPLE be scaled) + // This block needs to be evaluated only once for each instance + +`ifdef LocalModel + juncapwidth= JW; + +`else // LocalModel + // Clipping of the instance parameters + SAREF_i = `CLIP_LOW(SAREF, 1e-9); + SBREF_i = `CLIP_LOW(SBREF, 1e-9); + L_i = `CLIP_LOW(L, 1e-9); + W_i = `CLIP_LOW(W, 1e-9); + SA_i = SA; + SB_i = SB; + + /////////////////////////////////////////// + // GEOMETRICAL PARAMETERSCALING + /////////////////////////////////////////// + + // 3.2 Transistor geometry + LEN = 1e-6; + WEN = 1e-6; + iL = LEN / L_i; + iW = WEN / W_i; +`ifdef Binning + delLPS = LVARO * (1.0 + LVARL * iL); + delWOD = WVARO * (1.0 + WVARW * iW); +`else // Binning + delLPS = LVARO * (1.0 + LVARL * iL) * (1.0 + LVARW * iW); + delWOD = WVARO * (1.0 + WVARL * iL) * (1.0 + WVARW * iW); +`endif // Binning + LE = `CLIP_LOW(L_i + delLPS - 2.0 * LAP, 1e-9); + WE = `CLIP_LOW(W_i + delWOD - 2.0 * WOT, 1e-9); + LEcv = `CLIP_LOW(L_i + delLPS - 2.0 * LAP + DLQ, 1e-9); + WEcv = `CLIP_LOW(W_i + delWOD - 2.0 * WOT + DWQ, 1e-9); + Lcv = `CLIP_LOW(L_i + delLPS + DLQ, 1e-9); + Wcv = `CLIP_LOW(W_i + delWOD + DWQ, 1e-9); + iLE = LEN / LE; + iWE = WEN / WE; + juncapwidth= WE; + +`ifdef Binning + // 3.4 Geometry scaling with binning scaling rules + `include "PSP102_binning.include" + +`else // Binning + // 3.3 Geometry scaling with physical scaling rules + + // Process parameters + VFB = VFBO * (1.0 + VFBL * iLE) * (1.0 + VFBW * iWE) * (1.0 + VFBLW * iLE * iWE); + STVFB = STVFBO * (1.0 + STVFBL * iLE) * (1.0 + STVFBW * iWE) * (1.0 + STVFBLW * iLE * iWE); + TOX = TOXO; + NSUB0e = NSUBO_i * `MAX(( 1.0 + NSUBW * iWE * ln( 1.0 + WE / WSEG_i )), 1.0E-03); + NPCKe = NPCK_i * `MAX(( 1.0 + NPCKW * iWE * ln( 1.0 + WE / WSEGP_i )), 1.0E-03); + LPCKe = LPCK_i * `MAX(( 1.0 + LPCKW * iWE * ln( 1.0 + WE / WSEGP_i )), 1.0E-03); + if (LE > (2 * LPCKe)) begin + AA = 7.5e10; + BB = sqrt(NSUB0e + 0.5 * NPCKe) - sqrt(NSUB0e); + NSUB = sqrt(NSUB0e) + AA * ln(1 + 2 * LPCKe / LE * (exp(BB / AA) - 1)); + NSUB = NSUB * NSUB; + end else begin + if (LE >= LPCKe) begin + NSUB = NSUB0e + NPCKe * LPCKe / LE; + end else begin // LE < LPCK + NSUB = NSUB0e + NPCKe * (2 - LE / LPCKe); + end + end + NEFF = NSUB * (1 - FOL1 * iLE - FOL2 * iLE * iLE); + VNSUB = VNSUBO; + NSLP = NSLPO; + DNSUB = DNSUBO; + DPHIB = (DPHIBO + DPHIBL * pow(iLE, DPHIBLEXP)) * (1.0 + DPHIBW * iWE) * (1.0 + DPHIBLW * iLE * iWE); + NP = NPO * `MAX(1e-6, (1.0 + NPL * iLE)); + CT = (CTO + CTL * pow(iLE, CTLEXP)) * (1.0 + CTW * iWE) * (1.0 + CTLW * iLE * iWE); + TOXOV = TOXOVO; + NOV = NOVO; + + // DIBL parameters + CF = CFL * pow(iLE, CFLEXP) * (1.0 + CFW * iWE); + CFB = CFBO; + + // Mobility parameters + FBET1e = FBET1 * (1.0 + FBET1W * iWE); + LP1e = LP1_i * `MAX(1.0 + LP1W * iWE, 1.0E-03); + GPE = 1.0 + FBET1e * LP1e / LE * (1.0 - exp(-LE / LP1e)) + FBET2 * LP2_i / LE * (1.0 - exp(-LE / LP2_i)); + GPE = `MAX(GPE, 1e-15); + GWE = 1.0 + BETW1 * iWE + BETW2 * iWE * ln(1.0 + WE / WBET_i); + BETN = UO * WE / (GPE * LE) * GWE; + STBET = STBETO * (1.0 + STBETL * iLE) * (1.0 + STBETW * iWE) * (1.0 + STBETLW * iLE * iWE); + MUE = MUEO * (1.0 + MUEW * iWE); + STMUE = STMUEO; + THEMU = THEMUO; + STTHEMU = STTHEMUO; + CS = (CSO + CSL * pow(iLE, CSLEXP)) * (1.0 + CSW * iWE) * (1.0 + CSLW * iLE * iWE); + STCS = STCSO; + XCOR = XCORO * (1.0 + XCORL * iLE) * (1.0 + XCORW * iWE) * (1.0 + XCORLW * iLE * iWE); + STXCOR = STXCORO; + FETA = FETAO; + + // Series resistance + RS = RSW1 * iWE * (1.0 + RSW2 * iWE); + STRS = STRSO; + RSB = RSBO; + RSG = RSGO; + + // Velocity saturation + THESAT = (THESATO + THESATL* GWE / GPE * pow(iLE, THESATLEXP)) * (1.0 + THESATW * iWE) * (1.0 + THESATLW * iLE * iWE); + STTHESAT = STTHESATO * (1.0 + STTHESATL * iLE) * (1.0 + STTHESATW * iWE) * (1.0 + STTHESATLW * iLE * iWE); + THESATB = THESATBO; + THESATG = THESATGO; + + // Saturation voltage + AX = AXO / (1.0 + AXL_i * iLE); + + // Channel length modulation + ALP = ALPL * pow(iLE, ALPLEXP) * (1.0 + ALPW * iWE); + tmpx = pow(iLE, ALP1LEXP); + ALP1 = ALP1L1 * tmpx * (1.0 + ALP1W * iWE) / (1.0 + ALP1L2_i * iLE * tmpx); + tmpx = pow(iLE, ALP2LEXP); + ALP2 = ALP2L1 * tmpx * (1.0 + ALP2W * iWE) / (1.0 + ALP2L2_i * iLE * tmpx); + VP = VPO; + + // Impact ionization + A1 = A1O * (1.0 + A1L * iLE) * (1.0 + A1W * iWE); + A2 = A2O; + STA2 = STA2O; + A3 = A3O * (1.0 + A3L * iLE) * (1.0 + A3W * iWE); + A4 = A4O * (1.0 + A4L * iLE) * (1.0 + A4W * iWE); + + // Gate current + GCO = GCOO; + IGINV = IGINVLW / (iWE * iLE); + IGOV = IGOVW * LOV_i / (LEN * iWE); + STIG = STIGO; + GC2 = GC2O; + GC3 = GC3O; + CHIB = CHIBO; + + // GIDL + AGIDL = AGIDLW * LOV_i / (LEN * iWE); + BGIDL = BGIDLO; + STBGIDL = STBGIDLO; + CGIDL = CGIDLO; + + // Charge model parameters + COX = `EPSOX * WEcv * LEcv / TOX_i; + CGOV = `EPSOX * WEcv * LOV_i / TOXOV_i; + CGBOV = CGBOVL * Lcv / LEN; + CFR = CFRW * Wcv / WEN; + FNT = FNTO; + + // Noise model parameters + NFA = iWE * iLE * NFALW; + NFB = iWE * iLE * NFBLW; + NFC = iWE * iLE * NFCLW; +`endif // Binning + +`ifdef NQSmodel + MUNQS = MUNQSO; + RG = RGO; + RWELL = RWELLO; + RBULK = RBULKO; + RJUNS = RJUNSO; + RJUND = RJUNDO; +`endif // NQSModel + + /////////////////////////////////////////// + // STRESSMODEL + /////////////////////////////////////////// + + // 3.5 Stress equations + if ((SA_i > 0) && (SB_i > 0)) begin + // Auxiliary variables + Invsa = 1.0 / (SA_i + 0.5 * L_i); + Invsb = 1.0 / (SB_i + 0.5 * L_i); + Invsaref = 1.0 / (SAREF_i + 0.5 * L_i); + Invsbref = 1.0 / (SBREF_i + 0.5 * L_i); + Lx = `MAX(L_i + delLPS, 1e-9); + Wx = `MAX(W_i + delWOD + WLOD, 1e-9); + templ = 1.0 / pow(Lx, LLODKUO_i); + tempw = 1.0 / pow(Wx, WLODKUO_i); + Kstressu0 = (1.0 + LKUO * templ + WKUO * tempw + PKUO * templ * tempw) * (1.0 + TKUO * (rT - 1.0)); + rhobeta = KUO * (Invsa + Invsb) / Kstressu0; + rhobetaref = KUO * (Invsaref + Invsbref) / Kstressu0; + templ = 1.0 / pow(Lx, LLODVTH_i); + tempw = 1.0 / pow(Wx, WLODVTH_i); + Kstressvth0= 1.0 + LKVTHO * templ + WKVTHO * tempw + PKVTHO * templ * tempw; + temp0 = Invsa + Invsb - Invsaref - Invsbref; + + // Parameter adaptations + BETN = BETN * (1.0 + rhobeta) / (1.0 + rhobetaref); + THESAT = THESAT * (1.0 + rhobeta) * (1.0 + KVSAT_i * rhobetaref) / ((1.0 + rhobetaref) * (1.0 + KVSAT_i * rhobeta)); + VFB = VFB + KVTHO * temp0 / Kstressvth0; + CF = CF + STETAO * temp0 / pow(Kstressvth0, LODETAO_i); + end + + /////////////////////////////////////////// + // END OF SCALINGRULES AND STRESSMODEL + /////////////////////////////////////////// + +`endif // LocalModel + // 4.1 Internal parameters (including temperature scaling) + + // Clipping of the local model parameters + VFB_i = VFB; + STVFB_i = STVFB; + TOX_i = `CLIP_LOW(TOX, 1e-10); + NEFF_i = `CLIP_BOTH(NEFF, 1e20, 1e26); + VNSUB_i = VNSUB; + NSLP_i = `CLIP_LOW(NSLP, 1e-3); + DNSUB_i = `CLIP_BOTH(DNSUB, 0.0, 1.0); + DPHIB_i = DPHIB; + NP_i = `CLIP_LOW(NP, 0.0); + QMC_i = `CLIP_LOW(QMC, 0.0); + CT_i = `CLIP_LOW(CT, 0.0); + TOXOV_i = `CLIP_LOW(TOXOV, 1e-10); + NOV_i = `CLIP_BOTH(NOV, 1e20, 1e27); + CF_i = `CLIP_LOW(CF, 0.0); + CFB_i = `CLIP_BOTH(CFB, 0.0, 1.0); + BET_i = `CLIP_LOW(BETN, 0.0); + STBET_i = STBET; + MUE_i = `CLIP_LOW(MUE, 0.0); + STMUE_i = STMUE; + THEMU_i = `CLIP_LOW(THEMU, 0.0); + STTHEMU_i = STTHEMU; + CS_i = `CLIP_LOW(CS, 0.0); + STCS_i = STCS; + XCOR_i = `CLIP_LOW(XCOR, 0.0); + STXCOR_i = STXCOR; + FETA_i = `CLIP_LOW(FETA, 0.0); + RS_i = `CLIP_LOW(RS, 0.0); + STRS_i = STRS; + RSB_i = `CLIP_BOTH(RSB, -0.5, 1.0); + RSG_i = `CLIP_LOW(RSG, -0.5); + THESAT_i = `CLIP_LOW(THESAT, 0.0); + STTHESAT_i = STTHESAT; + THESATB_i = `CLIP_BOTH(THESATB, -0.5, 1.0); + THESATG_i = `CLIP_LOW(THESATG, -0.5); + AX_i = `CLIP_LOW(AX, 2.0); + ALP_i = `CLIP_LOW(ALP, 0.0); + ALP1_i = `CLIP_LOW(ALP1, 0.0); + ALP2_i = `CLIP_LOW(ALP2, 0.0); + VP_i = `CLIP_LOW(VP, 1.0e-10); + A1_i = `CLIP_LOW(A1, 0.0); + A2_i = `CLIP_LOW(A2, 0.0); + STA2_i = STA2; + A3_i = `CLIP_LOW(A3, 0.0); + A4_i = `CLIP_LOW(A4, 0.0); + GCO_i = `CLIP_BOTH(GCO, -10.0, 10.0); + IGINV_i = `CLIP_LOW(IGINV, 0.0); + IGOV_i = `CLIP_LOW(IGOV, 0.0); + STIG_i = STIG; + GC2_i = `CLIP_BOTH(GC2, 0.0, 10.0); + GC3_i = `CLIP_BOTH(GC3, -10.0, 10.0); + CHIB_i = `CLIP_LOW(CHIB, 1.0); + AGIDL_i = `CLIP_LOW(AGIDL, 0.0); + BGIDL_i = `CLIP_LOW(BGIDL, 0.0); + STBGIDL_i = STBGIDL; + CGIDL_i = CGIDL; + COX_i = `CLIP_LOW(COX, 0.0); + CGOV_i = `CLIP_LOW(CGOV, 0.0); + CGBOV_i = `CLIP_LOW(CGBOV, 0.0); + CFR_i = `CLIP_LOW(CFR, 0.0); + FNT_i = `CLIP_LOW(FNT, 0.0); + NFA_i = `CLIP_LOW(NFA, 0.0); + NFB_i = `CLIP_LOW(NFB, 0.0); + NFC_i = `CLIP_LOW(NFC, 0.0); + MULT_i = `CLIP_LOW(MULT, 0.0); + + + // Local process parameters + phit1 = phit * (1.0 + CT_i * rTn); + inv_phit1 = 1.0 / phit1; + + VFB_i = VFB_i + STVFB_i * dT; + phib = Eg + DPHIB_i + 2.0 * phit * ln(NEFF_i * pow(phibFac, -0.75) * 4.0e-26); + phib = `MAX(phib, 5.0E-2); + CoxPrime = `EPSOX / TOX_i; + tox_sq = TOX_i * TOX_i; + G_0 = sqrt(2.0 * `QELE * NEFF_i * `EPSSI * inv_phit) / CoxPrime; + + // Poly-silicon depletion + kp = 0.0; + if (NP_i > 0.0) begin + arg2max = 8.0e7 / tox_sq; + np = `MAX(NP_i, arg2max); + np = `MAX(3.0e25, np); + kp = 2.0 * CoxPrime * CoxPrime * phit / (`QELE * np * `EPSSI); + end + + // QM corrections + qlim2 = 100.0 * phit * phit; + qq = 0.0; + if (QMC_i > 0.0) begin + qq = 0.4 * `QMN * QMC_i * pow(CoxPrime, `twoThirds); + if (CHNL_TYPE==`PMOS) begin + qq = `QMP / `QMN * qq; + end + qb0 = sqrt(phit * G_0 * G_0 * phib); + dphibq = 0.75 * qq * pow(qb0, `twoThirds); + phib = phib + dphibq; + G_0 = G_0 * (1.0 + 2.0 * `twoThirds * dphibq / qb0); + end + sqrt_phib = sqrt(phib); + phix = 0.95 * phib; + aphi = 0.0025 * phib * phib; + bphi = aphi; + phix2 = 0.5 * sqrt(bphi); + phix1 = `MINA(phix - phix2, 0, aphi); + + // Gate overlap + CoxovPrime = `EPSOX / TOXOV_i; + GOV = sqrt(2.0 * `QELE * NOV_i * `EPSSI * inv_phit) / CoxovPrime; + GOV2 = GOV * GOV; + xi_ov = 1.0 + GOV * `invSqrt2; + inv_xi_ov = 1.0 / xi_ov; + x_mrg_ov = 1.0e-5 * xi_ov; + + // Mobility parameters + tf_bet = pow(rTn, STBET_i); + BET_i = BET_i * CoxPrime * tf_bet; + THEMU_i = THEMU_i * pow(rTn, STTHEMU_i); + tf_mue = pow(rTn, STMUE_i); + MUE_i = MUE_i * tf_mue; + tf_cs = pow(rTn, STCS_i); + CS_i = CS_i * tf_cs; + tf_xcor = pow(rTn, STXCOR_i); + XCOR_i = XCOR_i * tf_xcor; + E_eff0 = 1.0e-8 * CoxPrime / `EPSSI; + eta_mu = 0.5 * FETA_i; + if (CHNL_TYPE == `PMOS) begin + eta_mu = `oneThird * FETA_i; + end + + // Series resistance + tf_ther = pow(rTn, STRS_i); + RS_i = RS_i * tf_ther; + THER_i = 2 * BET_i * RS_i; + + // Velocity saturation + tf_thesat = pow(rTn, STTHESAT_i); + THESAT_i = THESAT_i * tf_thesat; + Vdsat_lim = 3.912023005 * phit1; + + inv_AX = 1.0 / AX_i; + inv_VP = 1.0 / VP_i; + + // Impact ionization + A2_i = A2_i * pow(rT, STA2_i); + + // Gate current + tf_ig = pow(rT, STIG_i); + IGINV_i = IGINV_i * tf_ig; + IGOV_i = IGOV_i * tf_ig; + inv_CHIB = 1.0 / CHIB_i; + tempM = 4.0 * `oneThird * sqrt(2 * `QELE * `MELE * CHIB_i) / `HBAR; + BCH = tempM * TOX_i; + BOV = tempM * TOXOV_i; + GCQ = 0; + if (GC3_i < 0) begin + GCQ = -0.495 * GC2_i / GC3_i; + end + alpha_b = 0.5 * (phib + Eg); + Dch = GCO_i * phit1; + Dov = GCO_i * phit; + + // GIDL + AGIDL_i = AGIDL_i * 4e-18 / (TOXOV_i * TOXOV_i); + tempM = `MAX(1.0 + STBGIDL_i * dT, 0); + BGIDL_i = BGIDL_i * tempM * TOXOV_i * 5e8; + + // Noise + nt = FNT_i * 4 * `KBOL * TKD; + Cox_over_q = CoxPrime / `QELE; + Sfl_prefac = phit * phit * BET_i / Cox_over_q; + + // Additional internal parameters + x1 = 1.25; + inv_xg1 = 1.0 / (x1 + GOV * 7.324648775608221e-1); // = 1.0/(x1+GOV*sqrt(exp(-x1)+x1-1)); +`ifdef NQSmodel + + // NQS parameters and variables + MUNQS_i = `CLIP_LOW(MUNQS, 0.0); + RG_i = `CLIP_LOW(RG, 1.0e-6); + RBULK_i = `CLIP_LOW(RBULK, 1.0e-6); + RJUNS_i = `CLIP_LOW(RJUNS, 1.0e-6); + RJUND_i = `CLIP_LOW(RJUND, 1.0e-6); + RWELL_i = `CLIP_LOW(RWELL, 1.0e-6); + + // Conductance of parasitic resistance + ggate = MULT_i / RG_i; + gbulk = MULT_i / RBULK_i; + gjuns = MULT_i / RJUNS_i; + gjund = MULT_i / RJUND_i; + gwell = MULT_i / RWELL_i; +`endif // NQSmodel + + // JUNCAP2 + vbimins = 0.0; + vfmins = 0.0; + vchs = 0.0; + vbbtlims = 0.0; + vbimind = 0.0; + vfmind = 0.0; + vchd = 0.0; + vbbtlimd = 0.0; + vj = 0.0; + idmult = 0.0; + vjsrh = 0.0; + zinv = 0.0; + wdep = 0.0; + wsrh = 0.0; + asrh = 0.0; + vav = 0.0; + vbi_minus_vjsrh = 0.0; + + if (SWJUNCAP == 0.0) begin + ABSOURCE_i = 0.0; + LSSOURCE_i = 0.0; + LGSOURCE_i = 0.0; + ABDRAIN_i = 0.0; + LSDRAIN_i = 0.0; + LGDRAIN_i = 0.0; + VMAXS = 0.0; + VMAXD = 0.0; + end else begin + if (SWJUNCAP == 2.0) begin + ABSOURCE_i = `CLIP_LOW(AS, `AB_cliplow); + LSSOURCE_i = `CLIP_LOW(PS, `LS_cliplow); + LGSOURCE_i = juncapwidth; + ABDRAIN_i = `CLIP_LOW(AD, `AB_cliplow); + LSDRAIN_i = `CLIP_LOW(PD, `LS_cliplow); + LGDRAIN_i = juncapwidth; + end else begin + if (SWJUNCAP == 3.0) begin + ABSOURCE_i = `CLIP_LOW(AS, `AB_cliplow); + ABDRAIN_i = `CLIP_LOW(AD, `AB_cliplow); + LSSOURCE_i = `CLIP_LOW(PS - juncapwidth, `LS_cliplow); + LGSOURCE_i = juncapwidth; + LSDRAIN_i = `CLIP_LOW(PD - juncapwidth, `LS_cliplow); + LGDRAIN_i = juncapwidth; + end else begin + ABSOURCE_i = `CLIP_LOW(ABSOURCE, `AB_cliplow); + LSSOURCE_i = `CLIP_LOW(LSSOURCE, `LS_cliplow); + LGSOURCE_i = `CLIP_LOW(LGSOURCE, `LG_cliplow); + ABDRAIN_i = `CLIP_LOW(ABDRAIN, `AB_cliplow); + LSDRAIN_i = `CLIP_LOW(LSDRAIN, `LS_cliplow); + LGDRAIN_i = `CLIP_LOW(LGDRAIN, `LG_cliplow); + end + end + `JuncapInitInstance(ABSOURCE_i, LSSOURCE_i, LGSOURCE_i, VMAXS, vbimins, vchs, vfmins, vbbtlims) + `JuncapInitInstance(ABDRAIN_i, LSDRAIN_i, LGDRAIN_i, VMAXD, vbimind, vchd, vfmind, vbbtlimd) + end + + + end // initial_instance + + ///////////////////////////////////////////////////////////////////////////// + // + // DC bias dependent quantities (calculations for current contribs) + // + ///////////////////////////////////////////////////////////////////////////// + + begin : evaluateStatic + // Initialisation of some variables + SP_S_x1 = 0.0; + x_s = 0.0; + sqm = 0.0; + alpha = 0.0; + eta_p = 1.0; + xitsb = 0.0; + rhob = 0.0; + GdL = 1.0; + FdL = 1.0; + Gmob = 1.0; + Gmob_dL = 1.0; + Udse = 0.0; + QCLM = 0.0; + thesat1 = 0.0; + Gvsat = 1.0; + Gvsatinv = 1.0; + xgm = 0.0; + dps = 0.0; + qim = 0.0; + qim1 = 0.0; + H = 1.0; + xs_ov = 0.0; + xd_ov = 0.0; + Vovs = 0.0; + Vovd = 0.0; + Iimpact = 0.0; + mavl = 0.0; + +`ifdef NQSmodel + // Initialization of variables for NQS model + pd = 1.0; + ym = 0.0; + + Vrg = V(G ,GP); + Vrjuns = V(BS,BI); + Vrjund = V(BD,BI); + Vrbulk = V(BP,BI); + Vrwell = V(B ,BI); +`endif // NQSmodel + if (CHNL_TYPE == `NMOS) begin + Vgs = V(`Gint, S); + Vds = V(D, S); + Vsb = V(S, `Bint); + Vjuns = -V(S, `Bjs); + Vjund = -V(D, `Bjd); + end else begin + Vgs = -V(`Gint, S); + Vds = -V(D, S); + Vsb = -V(S, `Bint); + Vjuns = V(S, `Bjs); + Vjund = V(D, `Bjd); + end + + // Source-drain interchange + sigVds = 1.0; + if (Vds < 0.0) begin + sigVds = -1.0; + Vgs = Vgs - Vds; + Vsb = Vsb + Vds; + Vds = -Vds; + end + + Vgd = Vgs - Vds; + Vdb = Vds + Vsb; + Vgb = Vgs + Vsb; + + xgs_ov = -Vgs * inv_phit; + xgd_ov = -Vgd * inv_phit; + + // 4.2.1 Conditioning of terminal voltages + temp = `MINA(Vdb, Vsb, bphi) + phix; + Vsbstar = Vsb - `MINA(temp, 0, aphi) + phix1; + Vdbstar = Vds + Vsbstar; + Vgbstar = Vgs + Vsbstar; + Vgb1 = Vgbstar - VFB_i; + Vdsx = sqrt(Vds * Vds + 0.01) - 0.1; + Vsbx = Vsbstar + 0.5 * (Vds - Vdsx); + delVg = CF_i * (Vdsx * (1 + CFB_i * Vsbx)); // DIBL + Vgb1 = Vgb1 + delVg; + xg = Vgb1 * inv_phit1; + + // 4.2.2 Bias dependent body factor + if (DNSUB_i > 0.0) begin + Dnsub = DNSUB_i * `MAXA(0, Vgs + Vsb - VNSUB_i, NSLP_i); + Gf = G_0 * sqrt(1.0 + Dnsub); + end else begin + Gf = G_0; + end + + // 4.2.3 Surface potential at source side + Gf2 = Gf * Gf; + inv_Gf2 = 1.0 / Gf2; + xi = 1.0 + Gf * `invSqrt2; + inv_xi = 1.0 / xi; + Ux = Vsbstar * inv_phit1; + xn_s = phib * inv_phit1 + Ux; + if (xn_s < `se) + delta_ns = exp(-xn_s); + else + delta_ns = `ke / `P3(xn_s - `se); + margin = 1e-5 * xi; + + `sp_s(x_s, xg, xn_s, delta_ns) + x_d = x_s; + x_m = x_s; + x_ds = 0.0; + + // + // Core PSP current calculation + // + if (xg <= 0.0) begin + qis = 0.0; + Ids = 0.0; + xgm = xg - x_s; + Voxm = xgm * phit1; + qeff = Voxm; + Vdsat = Vdsat_lim; + end else begin // (xg > 0) + delta_1s = 0.0; + temp = 1.0 / (2.0 + x_s * x_s); + xi0s = x_s * x_s * temp; + xi1s = 4.0 * (x_s * temp * temp); + xi2s = (8.0 * temp - 12.0 * xi0s) * temp * temp; + if (x_s < `se05) begin + delta_1s = exp(x_s); + Es = 1.0 / delta_1s; + delta_1s = delta_ns * delta_1s; + end else if (x_s > (xn_s - `se05)) begin + delta_1s = exp(x_s - xn_s); + Es = delta_ns / delta_1s; + end else begin + delta_1s = `ke05 / `P3(xn_s - x_s - `se05); + Es = `ke05 / `P3(x_s - `se05); + end + Ds = delta_1s - delta_ns * (x_s + 1.0 + xi0s); + if (x_s < 1.0e-5) begin + Ps = 0.5 * (x_s * x_s * (1.0 - `oneThird * (x_s * (1.0 - 0.25 * x_s)))); + Ds = `oneSixth * (delta_ns * x_s * x_s * x_s * (1.0 + 1.75 * x_s)); + temp = sqrt(1.0 - `oneThird * (x_s * (1.0 - 0.25 * x_s))); + sqm = `invSqrt2 * (x_s * temp); + alpha = 1.0 + Gf * `invSqrt2 * (1.0 - 0.5 * x_s + `oneSixth * (x_s * x_s)) / temp; + end else begin + Ps = x_s - 1.0 + Es; + sqm = sqrt(Ps); + alpha = 1.0 + 0.5 * (Gf * (1.0 - Es) / sqm); + end + Em = Es; + Ed = Em; + Dm = Ds; + Dd = Dm; + + // 4.2.4 Drain saturation voltage + Rxcor = (1.0 + 0.2 * XCOR_i * Vsbx) / (1.0 + XCOR_i * Vsbx); + if ( Ds > `ke05) begin + xgs = Gf * sqrt(Ps + Ds); + qis = Gf2 * Ds * phit1 / (xgs + Gf * sqm); + qbs = sqm * Gf * phit1; + if (RSB_i < 0) begin + rhob = 1.0 / (1.0 - RSB_i * Vsbx); + end else begin + rhob = 1.0 + RSB_i * Vsbx; + end + if (RSG_i < 0) begin + temp = 1.0 - RSG_i * qis; + end else begin + temp = 1.0 / (1.0 + RSG_i * qis); + end + GR = THER_i * (rhob * temp * qis); + Eeffm = E_eff0 * (qbs + eta_mu * qis); + Mutmp = pow(Eeffm * MUE_i, THEMU_i) + CS_i * (Ps / (Ps + Ds + 1.0e-14)); + Gmob = (1.0 + Mutmp + GR) * Rxcor; + if (THESATB_i < 0) begin + xitsb = 1.0 / (1.0 - THESATB_i * Vsbx); + end else begin + xitsb = 1.0 + THESATB_i * Vsbx; + end + temp2 = qis * xitsb; + wsat = 100.0 * (temp2 / (100.0 + temp2)); + if (THESATG_i < 0) begin + temp = 1 / (1 - THESATG_i * wsat); + end else begin + temp = 1 + THESATG_i * wsat; + end + thesat1 = THESAT_i * (temp / Gmob); + phi_inf = qis / alpha + phit1; + ysat = thesat1 * phi_inf * `invSqrt2; + if (CHNL_TYPE==`PMOS) begin + ysat = ysat / sqrt(1.0 + ysat); + end + za = 2.0 / (1.0 + sqrt(1.0 + 4.0 * ysat)); + temp1 = za * ysat; + Phi_0 = phi_inf * za * (1.0 + 0.86 * (temp1 * (1.0 - temp1 * za) / (1.0 + 4.0 * (temp1 * temp1 * za)))); + asat = xgs + 0.5 * Gf2; + Phi_2 = 0.98 * (Gf2 * Ds * phit1 / (asat + sqrt(asat * asat - Gf2 * Ds * 0.98))); + Phi_0_2 = Phi_0 + Phi_2; + Phi0_Phi2 = 2.0 * (Phi_0 * Phi_2); + Phi_sat = Phi0_Phi2 / (Phi_0_2 + sqrt(Phi_0_2 * Phi_0_2 - 1.98 * Phi0_Phi2)); + Vdsat = Phi_sat - phit1 * ln(1.0 + Phi_sat * (Phi_sat - 2.0 * asat * phit1) * inv_Gf2 / (phit1 * phit1 * Ds)); + end else begin + Vdsat = Vdsat_lim; + end + temp = pow(Vds / Vdsat, AX_i); + Vdse = Vds * pow(1.0 + temp, -inv_AX); + + // 4.2.5 Surface potential at drain side + Udse = Vdse * inv_phit1; + xn_d = xn_s + Udse; + if (Udse < `se) begin + k_ds = exp(-Udse); + end else begin + k_ds = `ke / `P3(Udse - `se); + end + delta_nd = delta_ns * k_ds; + + `sp_s_d(x_d, xg, xn_d, delta_nd) + x_ds = x_d - x_s; + + // + // Approximations for extremely small x_ds: capacitance calulation + // + if (x_ds < 1.0E-10) begin + pC = 2.0 * (xg - x_s) + Gf2 * (1.0 - Es + delta_1s * k_ds - delta_nd * (1.0 + xi1s)); + qC = Gf2 * (1.0 - k_ds) * Ds; + temp = 2.0 - Gf2 * (Es + delta_1s * k_ds - delta_nd * xi2s); + temp = pC * pC - 2.0 * (temp * qC); + x_ds = 2.0 * (qC / (pC + sqrt(temp))); + x_d = x_s + x_ds; + end + dps = x_ds * phit1; // deltaPsi + + xi0d = x_d * x_d / (2.0 + x_d * x_d); + if (x_d < `se05) begin + Ed = exp(-x_d); + if (x_d < 1.0e-5) begin + Dd = `oneSixth * delta_nd * x_d * x_d * x_d * (1.0 + 1.75 * x_d); + end else begin + Dd = delta_nd * (1.0 / Ed - x_d - 1.0 - xi0d); + end + end else begin + if (x_d > (xn_d - `se05)) begin + temp = exp(x_d - xn_d); + Ed = delta_nd / temp; + Dd = temp - delta_nd * (x_d + 1.0 + xi0d); + end else begin + Ed = `ke05 / `P3(x_d - `se05); + temp = `ke05 / `P3(xn_d - x_d - `se05); + Dd = temp - delta_nd * (x_d + 1.0 + xi0d); + end + end + + // 4.2.6 Mid-point surface potential + x_m = 0.5 * (x_s + x_d); + Em = 0.0; + temp = Ed * Es; + if (temp > 0.0) begin + Em = sqrt(temp); + end + D_bar = 0.5 * (Ds + Dd); + Dm = D_bar + 0.125 * (x_ds * x_ds * (Em - 2.0 * inv_Gf2)); + + if (x_m < 1.0e-5) begin + Pm = 0.5 * (x_m * x_m * (1.0 - `oneThird * (x_m * (1.0 - 0.25 * x_m)))); + xgm = Gf * sqrt(Dm + Pm); + + // 4.2.7 Polysilicon depletion + if (kp > 0.0) begin + eta_p = 1.0 / sqrt(1.0 + kp * xgm); + end // (kp > 0.0) + temp = sqrt(1.0 - `oneThird * (x_m * (1.0 - 0.25 * x_m))); + sqm = `invSqrt2 * (x_m * temp); + alpha = eta_p + `invSqrt2 * (Gf * (1.0 - 0.5 * x_m + `oneSixth * (x_m * x_m)) / temp); + end else begin + Pm = x_m - 1.0 + Em; + xgm = Gf * sqrt(Dm + Pm); + + // 4.2.7 Polysilicon depletion + if (kp > 0.0) begin + d0 = 1.0 - Em + 2.0 * (xgm * inv_Gf2); + eta_p = 1.0 / sqrt(1.0 + kp * xgm); + temp = eta_p / (eta_p + 1.0); + x_pm = kp * (temp * temp * Gf2 * Dm); + p_pd = 2.0 * (xgm - x_pm) + Gf2 * (1.0 - Em + Dm); + q_pd = x_pm * (x_pm - 2.0 * xgm); + xi_pd = 1.0 - 0.5 * (Gf2 * (Em + Dm)); + u_pd = q_pd * p_pd / (p_pd * p_pd - xi_pd * q_pd); + x_m = x_m + u_pd; + km = exp(u_pd); + Em = Em / km; + Dm = Dm * km; + Pm = x_m - 1.0 + Em; + xgm = Gf * sqrt(Dm + Pm); + help = 1.0 - Em + 2.0 * (xgm * eta_p * inv_Gf2); + x_ds = x_ds * km * (d0 + D_bar) / (help + km * D_bar); + dps = x_ds * phit1; + end // (kp > 0.0) + sqm = sqrt(Pm); + alpha = eta_p + 0.5 * (Gf * (1.0 - Em) / sqm); + end + + // 4.2.8 Potential midpoint inversion charge + qim = phit1 * (Gf2 * Dm / (xgm + Gf * sqm)); + + // 4.2.8 Potential midpoint inversion charge (continued) + qim1 = qim + phit1 * alpha; + qim1_1 = 1.0 / qim1; + qbm = sqm * Gf * phit1; + // Series resistance + if (RSG_i < 0) begin + temp = 1.0 - RSG_i * qim; + end else begin + temp = 1.0 / (1.0 + RSG_i * qim); + end + GR = THER_i * (rhob * temp * qim); + // Mobility reduction + qeff = qbm + eta_mu * qim; + Eeffm = E_eff0 * qeff; + Mutmp = pow(Eeffm * MUE_i, THEMU_i) + CS_i * (Pm / (Pm + Dm + 1.0e-14)); + Gmob = (1.0 + Mutmp + GR) * Rxcor; + + // 4.2.9 Drain-source channel current + // Channel length modulation + r1 = qim * qim1_1; + r2 = phit1 * (alpha * qim1_1); + temp = ln((1.0 + (Vds - dps) * inv_VP) / (1.0 + (Vdse - dps) * inv_VP)); + temp1 = ln(1.0 + Vdsx * inv_VP); + dL = ALP_i * temp; + GdL = 1.0 / (1.0 + dL + dL * dL); + dL1 = dL + ALP1_i * (qim1_1 * r1 * temp) + ALP2_i * (qbm * r2 * r2 * temp1); + FdL = (1.0 + dL1 + dL1 * dL1) * GdL; + // Velocity saturation + temp2 = qim * xitsb; + wsat = 100.0 * (temp2 / (100.0 + temp2)); + Gmob_dL = Gmob * GdL; + if (THESATG_i < 0) begin + temp = 1 / (1 - THESATG_i * wsat); + end else begin + temp = 1 + THESATG_i * wsat; + end + thesat1 = THESAT_i * (temp / Gmob_dL); + zsat = thesat1 * thesat1 * dps * dps; + if (CHNL_TYPE == `PMOS) begin + zsat = zsat / (1.0 + thesat1 * dps); + end + Gvsat = 0.5 * (Gmob_dL * (1.0 + sqrt(1.0 + 2.0 * zsat))); + Gvsatinv = 1.0 / Gvsat; + // Drain-source current + Ids = BET_i * (FdL * qim1 * dps * Gvsatinv); + + // 4.2.10 Variables for calculation of intrinsic charges and gate current + Voxm = xgm * phit1; + temp = Gmob_dL * Gvsatinv; + alpha1 = alpha * (1.0 + 0.5 * (zsat * temp * temp)); + H = temp * qim1 / alpha1; + + // 4.2.11 Impact-Ionization + if (SWIMPACT != 0) begin + delVsat = Vds - A3_i * dps; + if (delVsat > 0) begin + temp2 = A2_i * ((1.0 + A4_i * (sqrt(phib + Vsbstar) - sqrt_phib)) / delVsat); + `expl_low(-temp2, temp) + mavl = A1_i * (delVsat * temp); + Iimpact = Ids * mavl; + end + end + end // (xg > 0) + + // 4.2.12 Surface potential in gate overlap regions + if (((SWIGATE != 0) && (IGOV_i > 0)) || ((SWGIDL != 0) && (AGIDL_i > 0)) || (CGOV_i > 0)) begin + `sp_ov(xs_ov, xgs_ov) + `sp_ov(xd_ov, xgd_ov) + Vovs = -phit * (xgs_ov + xs_ov); + Vovd = -phit * (xgd_ov + xd_ov); + end + + // 4.2.13 Gate current + Igsov = 0.0; + Igdov = 0.0; + Igc = 0.0; + Igs = 0.0; + Igd = 0.0; + Igb = 0.0; + Igcs = 0.0; + Igcd = 0.0; + if (SWIGATE != 0) begin + if (IGOV_i > 0) begin + + // Gate-source overlap component of gate current + arg2mina = Vovs + Dov; + psi_t = `MINA(0.0, arg2mina, 0.01); + zg = sqrt(Vovs * Vovs + 1.0e-6) * inv_CHIB; + if (GC3_i < 0) begin + zg = `MINA(zg, GCQ, 1.0e-6); + end + arg1 = (3.0 + xs_ov + psi_t * inv_phit); + `expl(arg1, Dsi) + arg1 = -Vgs * inv_phit; + `expl(arg1, temp) + Dgate = Dsi * temp; + temp = BOV * (-1.5 + zg * (GC2_i + GC3_i * zg)); + if (temp > 0) begin + TP = `P3(temp); + end else begin + `expl_low(temp, TP) + end + Igsov = IGOV_i * (TP * ln((1.0 + Dsi) / (1.0 + Dgate))); + + // Gate-drain overlap component of gate current + arg2mina = Vovd + Dov; + psi_t = `MINA(0.0, arg2mina, 0.01); + zg = sqrt(Vovd * Vovd + 1.0e-6) * inv_CHIB; + if (GC3_i < 0) begin + zg = `MINA(zg, GCQ, 1.0e-6); + end + arg1 = (3.0 + xd_ov + psi_t * inv_phit); + `expl(arg1, Dsi) + arg1 = -Vgd * inv_phit; + `expl(arg1, temp) + Dgate = Dsi * temp; + temp = BOV * (-1.5 + zg * (GC2_i + GC3_i * zg)); + if (temp > 0) begin + TP = `P3(temp); + end else begin + `expl_low(temp, TP) + end + Igdov = IGOV_i * (TP * ln((1.0 + Dsi) / (1.0 + Dgate))); + end + + // Gate-channel component of gate current + if (IGINV_i > 0) begin + if (xg <= 0.0) begin + temp = pow(Vds / Vdsat_lim, AX_i); + Udse = Vds * pow(1.0 + temp, -inv_AX) * inv_phit1; + end + `expl_low(x_ds-Udse, temp) + Vm = Vsbstar + phit1 * (0.5 * x_ds - ln(0.5 * (1.0 + temp))); + + arg2mina = Voxm + Dch; + psi_t = `MINA(0.0, arg2mina, 0.01); + zg = sqrt(Voxm * Voxm + 1.0e-6) * inv_CHIB; + if (GC3_i < 0) begin + zg = `MINA(zg, GCQ, 1.0e-06); + end + arg1 = (x_m + (psi_t - alpha_b - Vm) * inv_phit1); + `expl(arg1,Dsi) + arg1 = -(Vgs + Vsbstar - Vm) * inv_phit1; + `expl(arg1,temp) + Dgate = Dsi * temp; + temp = BCH * (-1.5 + zg * (GC2_i + GC3_i * zg)); + if (temp > 0) begin + TP = `P3(temp); + end else begin + `expl_low(temp, TP) + end + Igc0 = IGINV_i * (TP * ln((1.0 + Dsi) / (1.0 + Dgate))); + + // Source/drain partitioning of gate-channel current + if ((xg <= 0) || ((GC2_i == 0) && (GC3_i == 0))) begin + igc = 1.0; + igcd_h = 0.5; + end else begin + temp = GC2_i + 2.0 * GC3_i * zg; + u0 = CHIB_i / (temp * BCH); + x = 0.5 * (dps / u0); + u0_div_H = u0 / H; + Bg = u0_div_H * (1.0 - u0_div_H) * 0.5; + Ag = 0.5 - 3.0 * Bg; + if (x < 1.0e-3) begin + xsq = x * x; + igc = 1.0 + xsq * (`oneSixth + u0_div_H * `oneThird + `oneSixth * (xsq * (0.05 + 0.2 * u0_div_H))); + igcd_h = 0.5 * igc - `oneSixth * (x * (1.0 + xsq * (0.4 * (Bg + 0.25) + 0.0285714285714 * (xsq * (0.125 + Bg))))); + end else begin + inv_x = 1.0 / x; + `expl(x, ex) + inv_ex = 1.0 / ex; + temp = ex - inv_ex; + temp2 = ex + inv_ex; + igc = 0.5 * ((1.0 - u0_div_H) * temp * inv_x + u0_div_H * temp2); + igcd_h = 0.5 * (igc - temp * (Bg - Ag * inv_x * inv_x) - Ag * temp2 * inv_x); + end + end + Sg = 0.5 * (1.0 + xg / sqrt(xg * xg + 1.0e-6)); + Igc = Igc0 * igc * Sg; + Igcd = Igc0 * igcd_h * Sg; + Igcs = Igc - Igcd; + Igb = Igc0 * igc * (1.0 - Sg); + end // (IGINV >0) + Igs = Igsov + Igcs; + Igd = Igdov + Igcd; + end // (SWIGATE != 0) + + // 4.2.14 GIDL/GISL current + Igidl = 0.0; + Igisl = 0.0; + if ((SWGIDL != 0) && (AGIDL_i > 0)) begin + + // GIDL current computation + if (Vovd < 0) begin + Vtovd = sqrt(Vovd * Vovd + CGIDL_i * CGIDL_i * (Vdb * Vdb) + 1.0e-6); + temp = -BGIDL_i / Vtovd; + `expl_low(temp, temp2) + Igidl = -AGIDL_i * (Vdb * Vovd * Vtovd * temp2); + end + + // GISL current computation + if (Vovs < 0) begin + Vtovs = sqrt(Vovs * Vovs + CGIDL_i * CGIDL_i * (Vsb * Vsb) + 1.0e-6); + temp = -BGIDL_i / Vtovs; + `expl_low(temp, temp2) + Igisl = -AGIDL_i * (Vsb * Vovs * Vtovs * temp2); + end + end // (SWGIDL != 0) + + end // evaluateStatic + + + ///////////////////////////////////////////////////////////////////////////// + // + // AC bias dependent quantities (calculations for charge contribs) + // + ///////////////////////////////////////////////////////////////////////////// + + begin : evaluateDynamic + + // 4.2.16 Quantum mechanical corrections + COX_qm = COX_i; + if (qq > 0.0) begin + COX_qm = COX_i / (1.0 + qq * pow(qeff * qeff + qlim2, -1.0 * `oneSixth)); + end + + // 4.2.17 Intrinsic charge model + if (xg <= 0.0) begin + QG = Voxm; + QI = 0.0; + QD = 0.0; + QB = QG; + end else begin + Fj = 0.5 * (dps / H); + Fj2 = Fj * Fj; + QCLM = (1.0 - GdL) * (qim - 0.5 * (alpha * dps)); + QG = Voxm + 0.5 * (eta_p * dps * (Fj * GdL * `oneThird - 1.0 + GdL)); + temp = alpha * dps * `oneSixth; + QI = GdL * (qim + temp * Fj) + QCLM; + QD = 0.5 * (GdL * GdL * (qim - temp * (1.0 - Fj - 0.2 * Fj2)) + QCLM * (1.0 + GdL)); + QB = QG - QI; + end + Qg = QG * COX_qm; + Qd = -QD * COX_qm; + Qb = -QB * COX_qm; + + // 4.2.18 Extrinsic charge model + Qgs_ov = CGOV_i * Vovs; + Qgd_ov = CGOV_i * Vovd; + Qgb_ov = CGBOV_i * Vgb; + + // Outer fringe charge + Qfgs = CFR_i * Vgs; + Qfgd = CFR_i * Vgd; +`ifdef NQSmodel + + // Variables for NQS model + Gp = 0.0; + Gp2 = 0.0; + a_factrp = 0.0; + marginp = 0.0; + if (SWNQS_i != 0) begin + if (xg <= 0.0) begin + ym = 0.5; + pd = 1.0; + Gp = Gf; + end else begin + ym = 0.5 * ( 1.0 + 0.25 * (dps / H)); + pd = xgm / (xg - x_m); + Gp = Gf / pd; + end + Gp2 = Gp * Gp; + a_factrp = 1.0 + Gp * `invSqrt2; + marginp = 1e-5 * a_factrp; + end +`endif // NQSmodel + + end // evaluateDynamic + + + ///////////////////////////////////////////////////////////////////////////// + // + // JUNCAP2 contribs + // + ///////////////////////////////////////////////////////////////////////////// + + begin : evaluateStaticDynamic + + // Source side + VAK = Vjuns; + VMAX = VMAXS; + vbimin = vbimins; + vfmin = vfmins; + vch = vchs; + vbbtlim = vbbtlims; + `juncapcommon(ABSOURCE_i,LSSOURCE_i,LGSOURCE_i,isjunbot,qsjunbot,isjunsti,qsjunsti,isjungat,qsjungat) + + // Drain side + VAK = Vjund; + VMAX = VMAXD; + vbimin = vbimind; + vfmin = vfmind; + vch = vchd; + vbbtlim = vbbtlimd; + `juncapcommon(ABDRAIN_i,LSDRAIN_i,LGDRAIN_i,idjunbot,qdjunbot,idjunsti,qdjunsti,idjungat,qdjungat) + +`ifdef NQSmodel + // Set initial conditions for NQS model + `include "PSP102_InitNQS.include" + +`endif // NQSmodel + end // evaluateStaticDynamic + + + ///////////////////////////////////////////////////////////////////////////// + // + // Current contribs + // + ///////////////////////////////////////////////////////////////////////////// + + begin : loadStatic + + // 4.2.15 Total terminal currents + + // Intrinsic MOSFET current + Idse = MULT_i * Ids; + + // Gate (tunneling) current components + Igbe = MULT_i * Igb; + Igse = MULT_i * Igs; + Igde = MULT_i * Igd; + + // GIDL/GISL current + Igidle = MULT_i * Igidl; + Igisle = MULT_i * Igisl; + + // Impact ionization current + Iimpacte = MULT_i * Iimpact; + + // JUNCAP2 + isjun = MULT_i * (ABSOURCE_i * isjunbot + LSSOURCE_i * isjunsti + LGSOURCE_i * isjungat); + idjun = MULT_i * (ABDRAIN_i * idjunbot + LSDRAIN_i * idjunsti + LGDRAIN_i * idjungat); + + // Convert back for NMOS-PMOS and Source-Drain interchange + if (sigVds > 0) begin + I(D, `Bint) <+ CHNL_TYPE * (Iimpacte + Igidle); + I(D, S) <+ CHNL_TYPE * Idse; + I(`Gint, S) <+ CHNL_TYPE * Igse; + I(`Gint, D) <+ CHNL_TYPE * Igde; + I(S, `Bint) <+ CHNL_TYPE * Igisle; + end else begin + I(S, `Bint) <+ CHNL_TYPE * (Iimpacte + Igidle); + I(S, D) <+ CHNL_TYPE * Idse; + I(`Gint, D) <+ CHNL_TYPE * Igse; + I(`Gint, S) <+ CHNL_TYPE * Igde; + I(D, `Bint) <+ CHNL_TYPE * Igisle; + end + I(`Gint, `Bint) <+ CHNL_TYPE * Igbe; + I(`Bjs, S) <+ CHNL_TYPE * isjun; + I(`Bjd, D) <+ CHNL_TYPE * idjun; +`ifdef NQSmodel + I(G, GP) <+ Vrg * ggate; + I(BP, BI) <+ Vrbulk * gbulk; + I(BS, BI) <+ Vrjuns * gjuns; + I(BD, BI) <+ Vrjund * gjund; + I(B, BI) <+ Vrwell * gwell; +`endif // NQSmodel + + I(D, S) <+ Vds * `GMIN; + + end // loadStatic + + ///////////////////////////////////////////////////////////////////////////// + // + // ddt() contribs from charges (Note: MULT is handled explicitly) + // + ///////////////////////////////////////////////////////////////////////////// + + begin : loadDynamic +`ifdef NQSmodel + + // Calculate NQS charge contributions + `include "PSP102_ChargesNQS.include" +`endif // NQSmodel + + // 4.2.19 Total terminal charges + + // Intrinsic MOSFET charges + Qg = MULT_i * Qg; + Qb = MULT_i * Qb; + Qd = MULT_i * Qd; + Qs = -(Qg + Qb + Qd); + + // Total outerFringe + overlap for + // gate-source and gate-drain. + Qfgs = MULT_i * (Qfgs + Qgs_ov); + Qfgd = MULT_i * (Qfgd + Qgd_ov); + + // Gate-bulk overlap charge + Qgb_ov = MULT_i * Qgb_ov; + + // JUNCAP2 + qsjun = MULT_i * (ABSOURCE_i * qsjunbot + LSSOURCE_i * qsjunsti + LGSOURCE_i * qsjungat); + qdjun = MULT_i * (ABDRAIN_i * qdjunbot + LSDRAIN_i * qdjunsti + LGDRAIN_i * qdjungat); + + // Convert back (undo S-D interchange) + if (sigVds < 0) begin + temp = Qd; // Qd <--> Qs + Qd = Qs; + Qs = temp; + temp = Qfgd; // Qfgd <--> Qfgs + Qfgd = Qfgs; + Qfgs = temp; + end + + I(`Gint, S) <+ ddt(CHNL_TYPE * Qg); + I(`Bint, S) <+ ddt(CHNL_TYPE * Qb); + I(D, S) <+ ddt(CHNL_TYPE * Qd); + I(`Gint, S) <+ ddt(CHNL_TYPE * Qfgs); + I(`Gint, D) <+ ddt(CHNL_TYPE * Qfgd); + I(`Gint, `Bint) <+ ddt(CHNL_TYPE * Qgb_ov); + I(`Bjs, S) <+ ddt(CHNL_TYPE * qsjun); + I(`Bjd, D) <+ ddt(CHNL_TYPE * qdjun); + + end // loadDynamic + + + ///////////////////////////////////////////////////////////////////////////// + // + // Noise + // + ///////////////////////////////////////////////////////////////////////////// + + begin : noise + + // 4.2.20 Noise variable calculation + Sfl = 0.0; + mid = 0.0; + mig = 0.0; + migid = 0.0; + c_igid = 0.0; + CGeff = COX_qm * eta_p; + sqid = 0.0; + sqig = 0.0; + if ((xg > 0.0) && (MULT_i > 0) && (BET_i > 0)) begin + N1 = Cox_over_q * alpha * phit; + Nm1 = Cox_over_q * qim1; + Delta_N1 = Cox_over_q * (alpha * dps); + Sfl = (NFA_i - NFB_i * N1 + NFC_i * (N1 * N1)) * ln((Nm1 + 0.5 * Delta_N1) / (Nm1 - 0.5 * Delta_N1)); + Sfl = Sfl + (NFB_i + NFC_i * (Nm1 - 2.0 * N1)) * Delta_N1; + Sfl = Sfl_prefac * Ids * Gvsatinv * Sfl / N1; + + H0 = qim1 / alpha; + t1 = qim / qim1; + sqt2 = 0.5 * `oneSixth * (dps / H0); + t2 = sqt2 * sqt2; + r = H0 / H - 1.0; + lc = `CLIP_LOW(1.0 - 12 * (r * t2), 1e-20); + lcinv2 = 1 / (lc * lc); + g_ideal = BET_i * (FdL * qim1 * Gvsatinv); + CGeff = Gvsat * Gvsat * COX_qm * eta_p / (Gmob_dL * Gmob_dL); + mid = t1 + 12 * t2 - 24 * ((1.0 + t1) * t2 * r); + mid = `CLIP_LOW(mid, 1e-40); + mid = g_ideal * lcinv2 * mid; + mig = t1 / 12 - t2 * (t1 + 0.2 - 12 * t2) - 1.6 * (t2 * (t1 + 1.0 - 12 * t2) * r); + mig = `CLIP_LOW(mig, 1e-40); + mig = lcinv2 / g_ideal * mig; + migid = lcinv2 * sqt2 * (1.0 - 12 * t2 - (t1 + 19.2 * t2 - 12 * (t1 * t2)) * r); + sqid = sqrt(MULT_i * nt * mid); + sqig = sqrt(MULT_i * nt / mig); + c_igid = (sqid == 0) ? 0.0 : (migid * sqig / sqid); // = migid / sqrt(mig * mid); + c_igid = `CLIP_BOTH(c_igid, 0.0, 1.0); + end + shot_igsx = 2.0 * `QELE * abs(Igse); + shot_igdx = 2.0 * `QELE * abs(Igde); + shot_iavl = 2.0 * `QELE * ((mavl + 1) * abs(Iimpacte)); + // JUNCAP2 + sjnoisex = 2.0 * `QELE * abs(isjun); + djnoisex = 2.0 * `QELE * abs(idjun); + if (sigVds > 0) begin + shot_igs = shot_igsx; + shot_igd = shot_igdx; + sjnoise = sjnoisex; + djnoise = djnoisex + shot_iavl; + end else begin + shot_igs = shot_igdx; + shot_igd = shot_igsx; + sjnoise = sjnoisex + shot_iavl; + djnoise = djnoisex; + end +`ifdef NQSmodel + rgatenoise = nt0 * ggate; + rbulknoise = nt0 * gbulk; + rjunsnoise = nt0 * gjuns; + rjundnoise = nt0 * gjund; + rwellnoise = nt0 * gwell; +`endif // NQSmodel + + // Important note: + // In Verilog-A, correlated noise sources can only be implemented by using two additional + // internal nodes (NOI and NOI2). When implementing PSP in a circuit simlutor, it is + // generally not necessary to retain these internal nodes and therefore (for execution + // speed reasons) should be avoided. + + // Noise contribs + I(NOI2) <+ V(NOI2); + I(NOI2) <+ white_noise(c_igid); + I(NOII) <+ white_noise(sqig * sqig * (1.0 - c_igid)); + I(NOII) <+ -sqig * V(NOI2); + I(NOIR) <+ V(NOIR); + I(NOIC) <+ ddt(mig * CGeff * V(NOIC)); + I(D,S) <+ flicker_noise(MULT_i * Sfl, 1.0); + I(D,S) <+ white_noise(sqid * sqid * (1.0 - c_igid)); + I(D,S) <+ sqid * V(NOI2); + I(`Gint,S)<+ ddt(0.5 * ((1.0 + sigVds) * mig * CGeff * V(NOIC))); + I(`Gint,D)<+ ddt(0.5 * ((1.0 - sigVds) * mig * CGeff * V(NOIC))); + I(`Gint,S)<+ white_noise(shot_igs); + I(`Gint,D)<+ white_noise(shot_igd); + // JUNCAP2 + I(`Bjs,S) <+ white_noise(sjnoise, "shot"); + I(`Bjd,D) <+ white_noise(djnoise, "shot"); +`ifdef NQSmodel + // Parasitic resistances + I(GP,G) <+ white_noise(rgatenoise); + I(BP,BI) <+ white_noise(rbulknoise); + I(BS,BI) <+ white_noise(rjunsnoise); + I(BD,BI) <+ white_noise(rjundnoise); + I(B ,BI) <+ white_noise(rwellnoise); +`endif // NQSmodel + end // noise + + +`ifdef insideADMS // OPinfo + ///////////////////////////////////////////////////////////////////////////// + // + // Operating point info + // + ///////////////////////////////////////////////////////////////////////////// + + begin : OPinfo + + // The output variables defined below are currently not available in + // Verilog-A, but only in the SiMKit-C-code which was generated from + // this source. Similar functionality will be available in Verilog-A + // from Verilog-A version 2.2 onwards. However, a different syntax is + // to be used (see Verilog AMS language reference manual, version 2.2, + // november 2004, Accellera). + + // Auxiliary variables + id_op = Idse + Iimpacte + Igidle - Igde; + is = -Idse + Igisle - Igse; + ig = Igse + Igde + Igbe; + ib = -Iimpacte - Igbe - Igidle - Igisle; + + P_D = 1 + 0.25 * (Gf * kp); + facvsb0 = phib + 2 * phit1; + facvsb = Vsbstar + facvsb0; + sig1k = 2 * `PI * 1000 * CGeff; + sig1k = sig1k * sig1k * mig; + + + //////////////////////////////////////////////////////////////////////////////////// + // + // Actual operation point output variables + // + //////////////////////////////////////////////////////////////////////////////////// + + // Note: In this section (and ONLY in this section) `drain' always refers to + // the highest-potential end of the channel. Therefore, care has to be + // taken for derivatives w.r.t. terminal voltages when sigVds == -1. + + sdint = sigVds; + ctype = CHNL_TYPE; + + if (sigVds < 0) begin + // All variables in the actual model refering to junctions are + // not subject to SD-interchange. In the OP-output variables, + // SD-interchange is also done for the junctions, so that's + // what is happening here. Similar precautions have to be taken + // for those variables that are derivatives w.r.t. voltage branches + ise = is - idjun; + ige = ig; + ide = id_op - isjun; + ibe = ib + isjun + idjun; + ids = Idse; + idb = Iimpacte + Igidle - isjun; + isb = Igisle - idjun; + igs = Igse; + igd = Igde; + igb = Igbe; + igcs = MULT_i * Igcs; + igcd = MULT_i * Igcd; + iavl = Iimpacte; + igisl = Igisle; + igidl = Igidle; + + ijsbot = MULT_i * ABDRAIN_i * idjunbot; + ijsgat = MULT_i * LGDRAIN_i * idjungat; + ijssti = MULT_i * LSDRAIN_i * idjunsti; + ijs = ijsbot + ijsgat + ijssti; + ijdbot = MULT_i * ABSOURCE_i * isjunbot; + ijdgat = MULT_i * LGSOURCE_i * isjungat; + ijdsti = MULT_i * LSSOURCE_i * isjunsti; + ijd = ijdbot + ijdgat + ijdsti; + + vds = Vds; + vgs = Vgs; + vsb = Vsb; + vto = VFB_i + P_D * facvsb0 + Gf * sqrt(phit1 * facvsb0); + vts = VFB_i + P_D * facvsb - Vsbstar + Gf * sqrt(phit1 * facvsb ); + vth = vts - delVg; + vgt = vgs - vth; + vdss = Vdsat; + vsat = Vds - vdss; + + temp = Idse + Iimpacte + Igidle - Igde - isjun; // Total drain-current + gm = CHNL_TYPE * ddx(temp, V(`Gint, S)); + gmb = -CHNL_TYPE * ddx(temp, V(S, `Bint)); + gds = -CHNL_TYPE * ddx(temp, V(D, S)) - (gm + gmb); + + gjs = -ddx(idjun, V(D, `Bjd)); + gjd = -ddx(isjun, V(S, `Bjs)); + + css = CHNL_TYPE * ddx(Qd, V(D, S)); + csg = -CHNL_TYPE * ddx(Qd, V(`Gint, S)); + csb = CHNL_TYPE * ddx(Qd, V(S, `Bint)); + csd = css - csg - csb; + cgs = -CHNL_TYPE * ddx(Qg, V(D, S)); + cgg = CHNL_TYPE * ddx(Qg, V(`Gint, S)); + cgb = CHNL_TYPE * ddx(Qg, V(S, `Bint)); + cgd = cgg - cgs - cgb; + cds = -CHNL_TYPE * ddx(Qs, V(D, S)); + cdg = -CHNL_TYPE * ddx(Qs, V(`Gint, S)); + cdb = CHNL_TYPE * ddx(Qs, V(S, `Bint)); + cdd = cdg + cds + cdb; + cbs = -CHNL_TYPE * ddx(Qb, V(D, S)); + cbg = -CHNL_TYPE * ddx(Qb, V(`Gint, S)); + cbb = -CHNL_TYPE * ddx(Qb, V(S, `Bint)); + cbd = cbb - cbs - cbg; + cgsol = -CHNL_TYPE * ddx(Qfgd, V(D, S)); + cgdol = CHNL_TYPE * ddx(Qfgs, V(`Gint, S)); + + cjsbot = -MULT_i * CHNL_TYPE * ABDRAIN_i * ddx(qdjunbot, V(D, `Bjd)); + cjsgat = -MULT_i * CHNL_TYPE * LGDRAIN_i * ddx(qdjungat, V(D, `Bjd)); + cjssti = -MULT_i * CHNL_TYPE * LSDRAIN_i * ddx(qdjunsti, V(D, `Bjd)); + cjs = cjsbot + cjsgat + cjssti; + cjdbot = -MULT_i * CHNL_TYPE * ABSOURCE_i * ddx(qsjunbot, V(S, `Bjs)); + cjdgat = -MULT_i * CHNL_TYPE * LGSOURCE_i * ddx(qsjungat, V(S, `Bjs)); + cjdsti = -MULT_i * CHNL_TYPE * LSSOURCE_i * ddx(qsjunsti, V(S, `Bjs)); + cjd = cjdbot + cjdgat + cjdsti; + end else begin + ise = is - isjun; + ige = ig; + ide = id_op - idjun; + ibe = ib + isjun + idjun; + ids = Idse; + idb = Iimpacte + Igidle - idjun; + isb = Igisle - isjun; + igs = Igse; + igd = Igde; + igb = Igbe; + igcs = MULT_i * Igcs; + igcd = MULT_i * Igcd; + iavl = Iimpacte; + igisl = Igisle; + igidl = Igidle; + + ijsbot = MULT_i * ABSOURCE_i * isjunbot; + ijsgat = MULT_i * LGSOURCE_i * isjungat; + ijssti = MULT_i * LSSOURCE_i * isjunsti; + ijs = ijsbot + ijsgat + ijssti; + ijdbot = MULT_i * ABDRAIN_i * idjunbot; + ijdgat = MULT_i * LGDRAIN_i * idjungat; + ijdsti = MULT_i * LSDRAIN_i * idjunsti; + ijd = ijdbot + ijdgat + ijdsti; + + vds = Vds; + vgs = Vgs; + vsb = Vsb; + vto = VFB_i + P_D * facvsb0 + Gf * sqrt(phit1 * facvsb0); + vts = VFB_i + P_D * facvsb - Vsbstar + Gf * sqrt(phit1 * facvsb ); + vth = vts - delVg; + vgt = vgs - vth; + vdss = Vdsat; + vsat = Vds - vdss; + + temp = Idse + Iimpacte + Igidle - Igde - idjun; + gm = CHNL_TYPE * ddx(temp, V(`Gint, S)); + gmb = -CHNL_TYPE * ddx(temp, V(S, `Bint)); + gds = CHNL_TYPE * ddx(temp, V(D, S)); + + gjs = -ddx(isjun, V(S, `Bjs)); + gjd = -ddx(idjun, V(D, `Bjd)); + + cdd = CHNL_TYPE * ddx(Qd, V(D, S)); + cdg = -CHNL_TYPE * ddx(Qd, V(`Gint, S)); + cdb = CHNL_TYPE * ddx(Qd, V(S, `Bint)); + cds = cdd - cdg - cdb; + cgd = -CHNL_TYPE * ddx(Qg, V(D, S)); + cgg = CHNL_TYPE * ddx(Qg, V(`Gint, S)); + cgb = CHNL_TYPE * ddx(Qg, V(S, `Bint)); + cgs = cgg - cgd - cgb; + csd = -CHNL_TYPE * ddx(Qs, V(D, S)); + csg = -CHNL_TYPE * ddx(Qs, V(`Gint, S)); + csb = CHNL_TYPE * ddx(Qs, V(S, `Bint)); + css = csg + csd + csb; + cbd = -CHNL_TYPE * ddx(Qb, V(D, S)); + cbg = -CHNL_TYPE * ddx(Qb, V(`Gint, S)); + cbb = -CHNL_TYPE * ddx(Qb, V(S, `Bint)); + cbs = cbb - cbd - cbg; + cgsol = CHNL_TYPE * ddx(Qfgs, V(`Gint, S)); + cgdol = -CHNL_TYPE * ddx(Qfgd, V(D, S)); + + cjsbot = -MULT_i * CHNL_TYPE * ABSOURCE_i * ddx(qsjunbot, V(S, `Bjs)); + cjsgat = -MULT_i * CHNL_TYPE * LGSOURCE_i * ddx(qsjungat, V(S, `Bjs)); + cjssti = -MULT_i * CHNL_TYPE * LSSOURCE_i * ddx(qsjunsti, V(S, `Bjs)); + cjs = cjsbot + cjsgat + cjssti; + cjdbot = -MULT_i * CHNL_TYPE * ABDRAIN_i * ddx(qdjunbot, V(D, `Bjd)); + cjdgat = -MULT_i * CHNL_TYPE * LGDRAIN_i * ddx(qdjungat, V(D, `Bjd)); + cjdsti = -MULT_i * CHNL_TYPE * LSDRAIN_i * ddx(qdjunsti, V(D, `Bjd)); + cjd = cjdbot + cjdgat + cjdsti; + end +`ifdef LocalModel + weff = 0; + leff = 0; +`else + weff = WE; + leff = LE; +`endif + u = (abs(gds) < 1e-18) ? 0 : (gm / gds); + rout = (abs(gds) < 1e-18) ? 0 : (1.0 / gds); + vearly = (abs(gds) < 1e-18) ? 0 : (ide / gds); + beff = (abs(vgt) < 1e-12) ? 0 : (2 * abs(ide) / (vgt * vgt)); + fug = (abs(cgg + cgsol + cgdol) < 1e-30) ? 0.0 : gm / (2 * `PI * (cgg + cgsol + cgdol)); + + sfl = Sfl; + sqrtsff = (abs(gm) < 1e-18) ? 0 : (sqrt(MULT_i * Sfl / 1000) / gm); + sqrtsfw = (abs(gm) < 1e-18) ? 0 : (sqid / gm); + sid = sqid * sqid; + sig = MULT_i * nt * sig1k / (1 + sig1k * mig); + cigid = c_igid; + fknee = (sid == 0) ? 0 : Sfl / sid; + sigs = shot_igsx; + sigd = shot_igdx; + siavl = shot_iavl; + if (sigVds < 0) begin + ssi = djnoisex; + sdi = sjnoisex; + end else begin + ssi = sjnoisex; + sdi = djnoisex; + end + end // OPinfo +`endif // OPinfo + + end // analogBlock diff --git a/src/spicelib/devices/adms/psp102/adms3va/PSP102_nqs_macrodefs.include b/src/spicelib/devices/adms/psp102/adms3va/PSP102_nqs_macrodefs.include new file mode 100644 index 000000000..e14819dfe --- /dev/null +++ b/src/spicelib/devices/adms/psp102/adms3va/PSP102_nqs_macrodefs.include @@ -0,0 +1,117 @@ +//====================================================================================== +//====================================================================================== +// Filename: PSP102_nqs_macrodefs.include +//====================================================================================== +//====================================================================================== +// +// (c) Copyright 2007, All Rights Reserved, NXP Semiconductors +// +// +// Version: 102.1, April 2007 (Simkit 2.5) +// +//====================================================================================== +//====================================================================================== +// +// Further information can be found in the file readme.txt +// + +////////////////////////////////////////// +// +// Macros used in PSP-NQS +// +////////////////////////////////////////// + +// Function to calculate bulk charge from surface potential +`define PhiToQb(phi,Qb_tmp) \ +if (abs(phi) <= margin) \ + Qb_tmp = -0.70710678 * phi * Gf * (1.0 - `oneSixth * phi * (1.0 - `oneSixth * phi)); \ +else begin \ + `expl((-phi), temp) \ + Qb_tmp = Gf * sqrt(temp + phi - 1.0); \ + if (phi > margin) \ + Qb_tmp = -Qb_tmp; \ +end + + +// Function used in fq-macro +`define PhiTod2Qis(xphi,d2Qis) \ +if (abs(xphi) <= margin) begin \ + Qb_tmp = -0.70710678 * xphi * Gf * (1.0 - `oneSixth * xphi * (1.0 - `oneSixth * xphi)); \ + dQbs = -0.70710678 * Gf * (1.0 - `oneThird * xphi * (1.0 - 0.25 * xphi)); \ + d2Qis = -0.235702 * Gf * (1.0 - 0.5 * xphi); \ +end else begin \ + `expl((-xphi),temp) \ + Qb_tmp = Gf * sqrt(temp + xphi - 1.0); \ + if (xphi > margin) \ + Qb_tmp = -Qb_tmp; \ + dQbs = 0.5 * Gf2 * (1.0 - temp) / Qb_tmp; \ + d2Qis = (dQbs * dQbs - 0.5 * Gf * Gf) / Qb_tmp + dQbs; \ +end + + + +// Function used in QiToPhi +`define sps(sp, xg) \ +if (abs(xg) <= marginp) begin \ + sp = xg / a_factrp; \ +end else begin \ + if (xg < -marginp) begin \ + NQS_yg = -xg; \ + NQS_z = 1.25 * NQS_yg / a_factrp; \ + NQS_eta = (NQS_z + 10.0 - sqrt((NQS_z - 6.0) * (NQS_z - 6.0) + 64.0)) * 0.5; \ + NQS_a = (NQS_yg - NQS_eta) * (NQS_yg - NQS_eta) + Gp2 * (NQS_eta + 1.0); \ + NQS_c = 2.0 * (NQS_yg - NQS_eta) - Gp2; \ + NQS_tau = ln(NQS_a / Gp2) - NQS_eta; \ + `sigma(NQS_a, NQS_c, NQS_tau, NQS_eta, NQS_y0) \ + `expl(NQS_y0, NQS_D0) \ + NQS_xi = 1.0 - Gp2 * NQS_D0 * 0.5; \ + NQS_p = 2.0 * (NQS_yg - NQS_y0) + Gp2 * (NQS_D0 - 1.0); \ + NQS_q = (NQS_yg - NQS_y0) * (NQS_yg - NQS_y0) + Gp2 * (NQS_y0 + 1.0 - NQS_D0); \ + NQS_temp = NQS_p * NQS_p - 4.0 * NQS_xi * NQS_q; \ + NQS_w = 2.0 * NQS_q / (NQS_p + sqrt(NQS_temp)); \ + sp = -(NQS_y0 + NQS_w); \ + end else begin \ + NQS_xg1 = 1.0 / ( 1.25 + 7.32464877560822e-01 * Gp); \ + NQS_A_fac = (1.25 * a_factrp * NQS_xg1 - 1.0) * NQS_xg1; \ + NQS_xbar = xg / a_factrp * (1.0 + NQS_A_fac * xg); \ + `expl(-NQS_xbar, NQS_temp) \ + NQS_w = 1.0 - NQS_temp; \ + NQS_x0 = xg + Gp2 * 0.5 - Gp * sqrt(xg + Gp2 * 0.25 - NQS_w); \ + `expl((-NQS_x0), NQS_D0) \ + NQS_xi = 1.0 - Gp2 * 0.5 * NQS_D0; \ + NQS_p = 2.0 * (xg - NQS_x0) + Gp2 * (1.0 - NQS_D0); \ + NQS_q = (xg - NQS_x0) * (xg - NQS_x0) - Gp2 * (NQS_x0 - 1.0 + NQS_D0); \ + NQS_temp = NQS_p * NQS_p - 4.0 * NQS_xi * NQS_q; \ + NQS_u = 2.0 * NQS_q / (NQS_p + sqrt(NQS_temp)); \ + sp = NQS_x0 + NQS_u; \ + end \ +end + + +// Function to calculate surface potential from inversion charge +`define QiToPhi(Qi,xg,xphi) \ + temp = Qi / pd + xg; \ + `sps(xphi,temp) + +// Calculation of fk +`define fq(Qi,xg,dQy,d2Qy,fk) \ + `QiToPhi(Qi, xg, xphi) \ + `PhiTod2Qis(xphi, d2Qis) \ + dQis = pd - dQbs; \ + dQis_1 = 1.0 / dQis; \ + fQi = Qi * dQis_1 - 1.0; \ + dfQi = (1.0 - Qi * d2Qis * dQis_1 * dQis_1) * dQis_1; \ + fk0 = dfQi * dQy * dQy + fQi * d2Qy; \ + dpsy2 = dQy * dQy * dQis_1 * dQis_1; \ + zsat = thesat2 * dpsy2; \ + if (CHNL_TYPE == `PMOS) \ + zsat = zsat / (1.0 + thesat1 * dps); \ + temp = sqrt(1.0 + 2.0 * zsat); \ + Fvsat = 2.0 / (1.0 + temp); \ + temp1 = d2Qy - dpsy2 * d2Qis; \ + fk = Fvsat * (fk0 - zsat * fQi * temp1 * Fvsat / temp); + + +// Interpolation of surface potential along channel +`define Phiy(y) \ + x_m + H * (1.0 - sqrt(1.0 - 2.0 * dps / H * ((y) - ym))) * inv_phit1 diff --git a/src/spicelib/devices/adms/psp102/adms3va/SIMKIT_macrodefs.include b/src/spicelib/devices/adms/psp102/adms3va/SIMKIT_macrodefs.include new file mode 100644 index 000000000..190b1eead --- /dev/null +++ b/src/spicelib/devices/adms/psp102/adms3va/SIMKIT_macrodefs.include @@ -0,0 +1,121 @@ +//====================================================================================== +//====================================================================================== +// Filename: SIMKIT_macrodefs.include +//====================================================================================== +//====================================================================================== +// +// (c) Copyright 2007, All Rights Reserved, NXP Semiconductors +// +// +// Version: 102.1, April 2007 (Simkit 2.5) +// +//====================================================================================== +//====================================================================================== +// +// Further information can be found in the file readme.txt +// + +////////////////////////////////////////////////////////////// +// +// General macros and constants for compact va-models +// +////////////////////////////////////////////////////////////// + +`define VERS "0.0" +`define VREV "0.0" +`define VERSreal 0.0 +`define VREVreal 0.0 + +`define CLIP_LOW(val,min) ((val)>(min)?(val):(min)) +`define CLIP_HIGH(val,max) ((val)<(max)?(val):(max)) +`define CLIP_BOTH(val,min,max) ((val)>(min)?((val)<(max)?(val):(max)):(min)) + + // Note 1: In this va-code, the `P-macro is defined such that its argument + // is ignored during compilation; in this source code it acts as + // a comment + // Note 2: In this va-code, the "from" keyword in the parameter + // list is not used. Silent clipping is used instead. One could enable + // the Verilog-A range checking by redefining the `from-macro below. + `define P(txt) + `define AT_MODEL + `define AT_INSTANCE + `define AT_NOISE + `define from(lower,upper) +// `define from(lower,upper) from[lower:upper] + +// Some functions +`define MAX(x,y) ((x)>(y)?(x):(y)) +`define MIN(x,y) ((x)<(y)?(x):(y)) + +// Mathematical constants +`define PI 3.1415926535897931 +`define SQRTPI 1.77245385090551603 + +// Physical constants +`define KELVINCONVERSION 273.15 +`define KBOL 1.3806505E-23 +`define QELE 1.6021918E-19 +`define HBAR 1.05457168E-34 +`define MELE 9.1093826E-31 +`define EPSSI 1.045E-10 + +// Other constants +`define oneThird 3.3333333333333333e-01 +`define twoThirds 6.6666666666666667e-01 + +// Constants needed in safe exponential function (called "expl") +`define se 4.6051701859880916e+02 +`define se05 2.3025850929940458e+02 +`define ke 1.0e-200 +`define ke05 1.0e-100 +`define keinv 1.0e200 +`define ke05inv 1.0e100 + +///////////////////////////////////////////////////////////////////////////// +// +// Macro definitions. +// +// Note that because variables in macros are not locally scoped, +// the intermediate variables used in the macros below must be +// explicitly declared in the main code. +// +///////////////////////////////////////////////////////////////////////////// + + +// P3 3rd order polynomial expansion of exp() +`define P3(u) (1.0 + (u) * (1.0 + 0.5 * ((u) * (1.0 + (u) * `oneThird)))) + + +// expl exp() with 3rd order polynomial extrapolation +// for very low values (exp_low), very high +// values (exp_high), or both (expl), to avoid overflows +// and underflows and retain C-3 continuity +`define expl(x, res) \ +if (abs(x) < `se05) begin\ + res = exp(x); \ +end else begin \ + if ((x) < -`se05) begin\ + res = `ke05 / `P3(-`se05 - (x)); \ + end else begin\ + res = `ke05inv * `P3((x) - `se05); \ + end \ +end + +`define expl_low(x, res) \ +if ((x) > -`se05) begin\ + res = exp(x); \ +end else begin\ + res = `ke05 / `P3(-`se05 - (x)); \ +end + +`define expl_high(x, res) \ +if ((x) < `se05) begin\ + res = exp(x); \ +end else begin \ + res = `ke05inv * `P3((x) - `se05); \ +end + +`define swap(a, b) \ +temp = a; \ +a = b; \ +b = temp; diff --git a/src/spicelib/devices/adms/psp102/adms3va/psp102.va b/src/spicelib/devices/adms/psp102/adms3va/psp102.va new file mode 100644 index 000000000..e033496a6 --- /dev/null +++ b/src/spicelib/devices/adms/psp102/adms3va/psp102.va @@ -0,0 +1,48 @@ +//====================================================================================== +//====================================================================================== +// Filename: psp102.va +//====================================================================================== +//====================================================================================== +// +// (c) Copyright 2007, All Rights Reserved, NXP Semiconductors +// +// +// Version: 102.1, April 2007 (Simkit 2.5) +// +//====================================================================================== +//====================================================================================== +// +// Further information can be found in the file readme.txt +// + +`include "discipline.h" + +`include "SIMKIT_macrodefs.include" + +`include "JUNCAP200_macrodefs.include" + +`include "PSP102_macrodefs.include" + + +///////////////////////////////////////////////////////////////////////////// +// +// PSP global model code +// +///////////////////////////////////////////////////////////////////////////// + +// `undef LocalModel +// `define Binning + +module PSP102VA(D, G, S, B) + +`P( + info = "PSP MOSFET Model" + version = `VERS + revision = `VREV + simkit:name = "psp1020" + simkit:desc = "psp_1020" +); + +`include "PSP102_module.include" + +endmodule diff --git a/src/spicelib/devices/adms/psp102/adms3va/readme.ngspice b/src/spicelib/devices/adms/psp102/adms3va/readme.ngspice new file mode 100644 index 000000000..3f5e3d431 --- /dev/null +++ b/src/spicelib/devices/adms/psp102/adms3va/readme.ngspice @@ -0,0 +1,8 @@ +ngspice customizations of package psp102.1 +------------------------------------------ + +- Mon Apr 30 15:28:25 WEDT 2007 (Berlin) + o renamed 'initializeModel/initializeInstance' to 'initial_model/initial_instance'. + (this issue should go away when auto-partionning done in adms.) + o redefined macro P(txt) in order to 'see' instance parameters + o status: psp code created by adms compiles diff --git a/src/spicelib/devices/adms/psp102/adms3va/readme.txt b/src/spicelib/devices/adms/psp102/adms3va/readme.txt new file mode 100644 index 000000000..5df9f5b4d --- /dev/null +++ b/src/spicelib/devices/adms/psp102/adms3va/readme.txt @@ -0,0 +1,120 @@ +====================================================================================== +====================================================================================== + + --------------------------- + Verilog-A definition of PSP + --------------------------- + + + (c) Copyright 2007, All Rights Reserved, NXP Semiconductors + + + Version: PSP 102.1 (including JUNCAP2 200.2), April 2007 (Simkit 2.5) + +====================================================================================== +====================================================================================== + + Authors: G.D.J. Smit, A.J. Scholten, and D.B.M. Klaassen (NXP Semiconductors Research) + R. van Langevelde (Philips Research) + G. Gildenblat, X. Li, and W. Wu (The Arizona State University) + + + +The most recent version of the model code, the documentation, and contact information +can be found on: + + http://PSPmodel.asu.edu/ +or + http://www.nxp.com/Philips_Models/ + +====================================================================================== +====================================================================================== + +This package consists of several files: + + - readme.txt This file + + - psp102.va Main file for global ("geometrical") model + - psp102b.va Main file for global binning model + - psp102e.va Main file for local ("electrical") model + - psp102_nqs.va Main file for global ("geometrical") model with NQS-effects + - psp102b_nqs.va Main file for global binning model with NQS-effects + - psp102e_nqs.va Main file for local ("electrical") model with NQS-effects + - juncap200.va Main file for JUNCAP2 stand-alone model + + - SIMKIT_macrodefs.include Common macro definitions + - PSP102_macrodefs.include Macro definitions for PSP + - PSP102_module.include Actual model code for intrinsic MOS model + - PSP102_binning.include Geometry scaling equation for binning + - PSP102_binpars.include Parameterlist for global PSP binning model + - PSP102_nqs_macrodefs.include Macro definitions for PSP-NQS + - PSP102_InitNQS.include PSP-NQS initialization code + - PSP102_ChargesNQS.include Calculation of NQS-charge contributions + - JUNCAP200_macrodefs.include Macro definitions for JUNCAP2 model + - JUNCAP200_parlist.include JUNCAP2 parameter list + - JUNCAP200_varlist.include JUNCAP2 variable declarations + - JUNCAP200_InitModel.include JUNCAP2 model initialization code + +====================================================================================== +====================================================================================== + +Usage +----- + +Depending which model one wants to use, one should compile one of the seven .va-files +(psp102.va, psp102b.va, psp102e.va, psp102_nqs.va, psp102b_nqs.va, psp102e_nqs.va, and +juncap200.va). The module names are "PSP102VA" and "PSPNQS102VA" for the global PSP-model +(QS and NQS, respectively), and similarly "PSP102BVA" and "PSPNQS102BVA" for the binning +PSP-model, "PSP102EVA" and "PSPNQS102EVA" for the local PSP-model, and "JUNCAP200" for +the JUNCAP2-model. + + +====================================================================================== +====================================================================================== + +Release notes va-code of PSP 102.1, including JUNCAP2 200.2 (April 2007) +------------------------------------------------------------------------ + +Focus in this release has been on improving the simulation speed of PSP and JUNCAP2. +The model equations in this release of PSP 102.1 are identical to those in the +October 2006 release. This version features some minor impelementation changes +w.r.t. the previous release. + +The main changes have been in the SiMKit version generated from this verilog-A +implementation: improvements in the automatic C-code generation process +and compilation of the C-code. The result is reflected in the SiMKit 2.5 version of +PSP, which shows a very significant simulation speed improvement w.r.t SiMKit 2.4. + +The minor implementation changes in the verilog-A code will have some positive effect +on the simulation speed of the verilog-A version as well. Note, however, that the +simulation speed of the verilog-A version of PSP and the improvement w.r.t. the +previous version strongly depend on the verilog-A compiler used. + +PSP 102.1 is backwards compatible with the previous version, PSP 102.0. + + +====================================================================================== +====================================================================================== + +The functionality of the Verilog-A code in this package is the same as that of the +C-code, which is contained in SIMKIT version 2.5. Note that Operating Point information +is available only in the C-code, not in Verilog-A code. + + +The PSP-NQS model is provided as Verilog-A code. In SiMKit 2.5, a test version of +the PSP-NQS model is included (identical to that in SiMKit 2.4). This implementation +circumvents the problem of the SpectreVerilog-A-generated C-code being too large to +compile. Moreover, it is computationally more efficient as it uses less rows in the +simulator matrix. On the other hand, this implementation has some known limitations. +More information is available from the authors. Further improvements are expected in +future releases. + + +This Verilog-A code of PSP is primarily intended as a source for C-code generation +using ADMS. Most of the testing has been done on the C-code which was generated from it. + + +The authors want to thank Laurent Lemaitre and Colin McAndrew (Freescale) +for their help with ADMS and the implementation of the model code. Geoffrey +Coram (Analog Devices) is acknowledged for useful comments on the Verilog-A +code.