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@ -1870,8 +1870,9 @@ Note: "u2" function has been introduced in rework-11. |
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|
The following standard operators are defined: |
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@example |
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+ - * / @^{@ } unary - |
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+ - * / @{ @} unary - |
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@end example |
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@ -6529,6 +6530,7 @@ and model, but are provided as a quick reference guide. |
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@node Uniform RC line, Arbitrary Source, Model and Device Parameters, Model and Device Parameters |
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@section URC: Uniform R.C. line |
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@example |
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|
------------------------------------------------------------ |
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| URC - instance parameters (input-output) | |
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@ -6564,10 +6566,12 @@ and model, but are provided as a quick reference guide. |
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| isperl Saturation current per length | |
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| rsperl Diode resistance per length | |
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|
------------------------------------------------------------ |
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|
@end example |
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@node Arbitrary Source, Bipolar Junction Transistor, Uniform RC line, Model and Device Parameters |
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@section ASRC: Arbitrary Source |
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@example |
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|
------------------------------------------------------------ |
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| ASRC - instance parameters (input-only) | |
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@ -6585,10 +6589,12 @@ and model, but are provided as a quick reference guide. |
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| pos_node Positive Node | |
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| neg_node Negative Node | |
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------------------------------------------------------------ |
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@end example |
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@node Bipolar Junction Transistor, BSIM1 Berkeley Short Channel IGFET Model, Arbitrary Source, Model and Device Parameters |
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@section BJT: Bipolar Junction Transistor |
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@example |
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|
------------------------------------------------------------ |
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| BJT - instance parameters (input-only) | |
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|-----------------------------------------------------------+ |
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@ -6752,10 +6758,12 @@ and model, but are provided as a quick reference guide. |
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| transtimevbcfact Transit time VBC factor | |
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| excessphasefactor Excess phase fact. | |
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------------------------------------------------------------ |
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@end example |
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@node BSIM1 Berkeley Short Channel IGFET Model, BSIM2 Berkeley Short Channel IGFET Model, Bipolar Junction Transistor, Model and Device Parameters |
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@section BSIM1: Berkeley Short Channel IGFET Model |
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@example |
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|
------------------------------------------------------------ |
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| BSIM1 - instance parameters (input-only) | |
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@ -6796,7 +6804,7 @@ and model, but are provided as a quick reference guide. |
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| BSIM1 - model parameters (input-output) | |
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|-----------------------------------------------------------+ |
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| vfb Flat band voltage | |
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lvfb Length dependence of vfb |
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|lvfb Length dependence of vfb | |
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| wvfb Width dependence of vfb | |
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| phi Strong inversion surface potential | |
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------------------------------------------------------------ |
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@ -6820,7 +6828,7 @@ and model, but are provided as a quick reference guide. |
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|
--------------------------------------------------------------------- |
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| BSIM1 - model input-output parameters - continued| |
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| BSIM1 - model input-output parameters - continued | |
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|--------------------------------------------------------------------+ |
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|wx2e Width dependence of x2e | |
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|x3e VDS dependence of eta | |
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@ -6903,10 +6911,12 @@ and model, but are provided as a quick reference guide. |
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|wdf Default width of source drain diffusion in um | |
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|dell Length reduction of source drain diffusion | |
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|
--------------------------------------------------------------------------- |
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@end example |
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|
|
@node BSIM2 Berkeley Short Channel IGFET Model, Fixed capacitor, BSIM1 Berkeley Short Channel IGFET Model, Model and Device Parameters |
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|
@section BSIM2: Berkeley Short Channel IGFET Model |
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@example |
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|
------------------------------------------------------------ |
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| BSIM2 - instance parameters (input-only) | |
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@ -7052,90 +7062,101 @@ and model, but are provided as a quick reference guide. |
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| wu1d Width depence of u1d | |
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| n0 Subthreshold slope at VDS=0 VBS=0 | |
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| ln0 Length dependence of n0 | |
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| continued | |
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| continued | |
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------------------------------------------------------------ |
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|
------------------------------------------------------------------------ |
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-------------------------------------------------------------- |
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| BSIM2 - model input-output parameters - continued | |
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|-----------------------------------------------------------------------+ |
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|wn0 Width dependence of n0 | |
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|nb VBS dependence of n | |
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|lnb Length dependence of nb | |
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|wnb Width dependence of nb | |
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|
------------------------------------------------------------------------ |
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|nd VDS dependence of n | |
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|lnd Length dependence of nd | |
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|wnd Width dependence of nd | |
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|vof0 Threshold voltage offset AT VDS=0 VBS=0 | |
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|-----------------------------------------------------------------------+ |
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|lvof0 Length dependence of vof0 | |
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|wvof0 Width dependence of vof0 | |
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|vofb VBS dependence of vof | |
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|lvofb Length dependence of vofb | |
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|
------------------------------------------------------------------------ |
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|wvofb Width dependence of vofb | |
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|vofd VDS dependence of vof | |
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|lvofd Length dependence of vofd | |
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|wvofd Width dependence of vofd | |
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|-----------------------------------------------------------------------+ |
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|
|ai0 Pre-factor of hot-electron effect. | |
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|lai0 Length dependence of ai0 | |
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|wai0 Width dependence of ai0 | |
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|aib VBS dependence of ai | |
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|
------------------------------------------------------------------------ |
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|laib Length dependence of aib | |
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|waib Width dependence of aib | |
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|bi0 Exponential factor of hot-electron effect. | |
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|lbi0 Length dependence of bi0 | |
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|-----------------------------------------------------------------------+ |
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|wbi0 Width dependence of bi0 | |
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|bib VBS dependence of bi | |
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|lbib Length dependence of bib | |
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|wbib Width dependence of bib | |
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|
------------------------------------------------------------------------ |
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|
|vghigh Upper bound of the cubic spline function. | |
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|lvghigh Length dependence of vghigh | |
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|wvghigh Width dependence of vghigh | |
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|vglow Lower bound of the cubic spline function. | |
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|
|-----------------------------------------------------------------------+ |
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|lvglow Length dependence of vglow | |
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|wvglow Width dependence of vglow | |
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|tox Gate oxide thickness in um | |
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|temp Temperature in degree Celcius | |
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|
------------------------------------------------------------------------ |
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|
|vdd Maximum Vds | |
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|vgg Maximum Vgs | |
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|vbb Maximum Vbs | |
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|
|cgso Gate source overlap capacitance per unit channel width(m) |
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|
|-----------------------------------------------------------------------+ |
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|
|cgdo Gate drain overlap capacitance per unit channel width(m)| |
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|
|cgbo Gate bulk overlap capacitance per unit channel length(m)| |
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|
|xpart Flag for channel charge partitioning | |
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|
|--------------------------------------------------------------+ |
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|
|wn0 Width dependence of n0 | |
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|
|nb VBS dependence of n | |
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|
|lnb Length dependence of nb | |
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|
|wnb Width dependence of nb | |
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|
--------------------------------------------------------------+ |
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|
|nd VDS dependence of n | |
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|
|lnd Length dependence of nd | |
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|
|wnd Width dependence of nd | |
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|
|vof0 Threshold voltage offset AT VDS=0 VBS=0 | |
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|
|--------------------------------------------------------------+ |
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|
|lvof0 Length dependence of vof0 | |
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|
|wvof0 Width dependence of vof0 | |
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|
|vofb VBS dependence of vof | |
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|
|lvofb Length dependence of vofb | |
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|
--------------------------------------------------------------+ |
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|
|
|wvofb Width dependence of vofb | |
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|
|vofd VDS dependence of vof | |
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|
|lvofd Length dependence of vofd | |
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|
|
|wvofd Width dependence of vofd | |
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|
|
|--------------------------------------------------------------+ |
|
|
|
|ai0 Pre-factor of hot-electron effect. | |
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|
|lai0 Length dependence of ai0 | |
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|
|wai0 Width dependence of ai0 | |
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|
|aib VBS dependence of ai | |
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|
--------------------------------------------------------------+ |
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|
|
|laib Length dependence of aib | |
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|
|waib Width dependence of aib | |
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|
|
|bi0 Exponential factor of hot-electron effect. | |
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|
|lbi0 Length dependence of bi0 | |
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|
|--------------------------------------------------------------+ |
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|
|
|wbi0 Width dependence of bi0 | |
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|
|bib VBS dependence of bi | |
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|
|
|lbib Length dependence of bib | |
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|
|
|wbib Width dependence of bib | |
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|
|
--------------------------------------------------------------+ |
|
|
|
|vghigh Upper bound of the cubic spline function. | |
|
|
|
|lvghigh Length dependence of vghigh | |
|
|
|
|wvghigh Width dependence of vghigh | |
|
|
|
|vglow Lower bound of the cubic spline function. | |
|
|
|
|--------------------------------------------------------------+ |
|
|
|
|lvglow Length dependence of vglow | |
|
|
|
|wvglow Width dependence of vglow | |
|
|
|
|tox Gate oxide thickness in um | |
|
|
|
|temp Temperature in degree Celcius | |
|
|
|
--------------------------------------------------------------+ |
|
|
|
|vdd Maximum Vds | |
|
|
|
|vgg Maximum Vgs | |
|
|
|
|vbb Maximum Vbs | |
|
|
|
|cgso Gate source overlap capacitance per unit | |
|
|
|
| channel width(m) | |
|
|
|
|--------------------------------------------------------------+ |
|
|
|
|cgdo Gate drain overlap capacitance | |
|
|
|
| per unit channel width(m) | |
|
|
|
|cgbo Gate bulk overlap capacitance | |
|
|
|
| per unit channel length(m) | |
|
|
|
|xpart Flag for channel charge partitioning | |
|
|
|
| continued | |
|
|
|
------------------------------------------------------------------------ |
|
|
|
--------------------------------------------------------------- |
|
|
|
|
|
|
|
|
|
|
|
--------------------------------------------------------------------------- |
|
|
|
| BSIM2 - model input-output parameters - continued | |
|
|
|
|--------------------------------------------------------------------------+ |
|
|
|
|rsh Source drain diffusion sheet resistance in ohm per square | |
|
|
|
|js Source drain junction saturation current per unit area | |
|
|
|
|pb Source drain junction built in potential | |
|
|
|
mj Source drain bottom junction capacitance grading coefficient |
|
|
|
| | |
|
|
|
--------------------------------------------------------------------------- |
|
|
|
|pbsw Source drain side junction capacitance built in potential | |
|
|
|
|mjsw Source drain side junction capacitance grading coefficient | |
|
|
|
|cj Source drain bottom junction capacitance per unit area | |
|
|
|
|cjsw Source drain side junction capacitance per unit area | |
|
|
|
|wdf Default width of source drain diffusion in um | |
|
|
|
|dell Length reduction of source drain diffusion | |
|
|
|
--------------------------------------------------------------------------- |
|
|
|
--------------------------------------------------------------- |
|
|
|
| BSIM2 - model input-output parameters | |
|
|
|
|--------------------------------------------------------------+ |
|
|
|
|rsh Source drain diffusion sheet resistance | |
|
|
|
| in ohm per square | |
|
|
|
|js Source drain junction saturation current | |
|
|
|
| per unit area | |
|
|
|
|pb Source drain junction built in potential | |
|
|
|
|mj Source drain bottom junction capacitance | |
|
|
|
| grading coefficient | |
|
|
|
--------------------------------------------------------------+ |
|
|
|
|pbsw Source drain side junction capacitance | |
|
|
|
| built in potential | |
|
|
|
|mjsw Source drain side junction capacitance | |
|
|
|
| grading coefficient | |
|
|
|
|cj Source drain bottom junction capacitance | |
|
|
|
| per unit area | |
|
|
|
|cjsw Source drain side junction capacitance | |
|
|
|
| per unit area | |
|
|
|
|wdf Default width of source drain diffusion in um | |
|
|
|
|dell Length reduction of source drain diffusion | |
|
|
|
--------------------------------------------------------------- |
|
|
|
@end example |
|
|
|
|
|
|
|
|
|
|
|
@node Fixed capacitor, Current controlled current source, BSIM2 Berkeley Short Channel IGFET Model, Model and Device Parameters |
|
|
|
@section Capacitor: Fixed capacitor |
|
|
|
@example |
|
|
|
|
|
|
|
------------------------------------------------------------ |
|
|
|
| Capacitor - instance parameters (input-output) | |
|
|
|
@ -7170,10 +7191,12 @@ and model, but are provided as a quick reference guide. |
|
|
|
| defw Default width | |
|
|
|
| narrow width correction factor | |
|
|
|
------------------------------------------------------------ |
|
|
|
@end example |
|
|
|
|
|
|
|
|
|
|
|
@node Current controlled current source, Linear current controlled current source, Fixed capacitor, Model and Device Parameters |
|
|
|
@section CCCS: Current controlled current source |
|
|
|
@example |
|
|
|
|
|
|
|
------------------------------------------------------------ |
|
|
|
| CCCS - instance parameters (input-output) | |
|
|
|
@ -7192,10 +7215,12 @@ and model, but are provided as a quick reference guide. |
|
|
|
| v CCCS voltage at output | |
|
|
|
| p CCCS power | |
|
|
|
------------------------------------------------------------ |
|
|
|
@end example |
|
|
|
|
|
|
|
|
|
|
|
@node Linear current controlled current source, Current controlled ideal switch, Current controlled current source, Model and Device Parameters |
|
|
|
@section CCVS: Linear current controlled current source |
|
|
|
@example |
|
|
|
|
|
|
|
------------------------------------------------------------ |
|
|
|
| CCVS - instance parameters (input-output) | |
|
|
|
@ -7214,11 +7239,13 @@ and model, but are provided as a quick reference guide. |
|
|
|
| v CCVS output voltage | |
|
|
|
| p CCVS power | |
|
|
|
------------------------------------------------------------ |
|
|
|
@end example |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
@node Current controlled ideal switch, Junction Diode model, Linear current controlled current source, Model and Device Parameters |
|
|
|
@section CSwitch: Current controlled ideal switch |
|
|
|
@example |
|
|
|
|
|
|
|
------------------------------------------------------------ |
|
|
|
| CSwitch - instance parameters (input-only) | |
|
|
|
@ -7262,10 +7289,12 @@ and model, but are provided as a quick reference guide. |
|
|
|
| gon Closed conductance | |
|
|
|
| goff Open conductance | |
|
|
|
------------------------------------------------------------ |
|
|
|
@end example |
|
|
|
|
|
|
|
|
|
|
|
@node Junction Diode model, Inductor, Current controlled ideal switch, Model and Device Parameters |
|
|
|
@section Diode: Junction Diode model |
|
|
|
@example |
|
|
|
|
|
|
|
------------------------------------------------------------ |
|
|
|
| Diode - instance parameters (input-output) | |
|
|
|
@ -7329,10 +7358,12 @@ and model, but are provided as a quick reference guide. |
|
|
|
|-----------------------------------------------------------+ |
|
|
|
| cond Ohmic conductance | |
|
|
|
------------------------------------------------------------ |
|
|
|
@end example |
|
|
|
|
|
|
|
|
|
|
|
@node Inductor, Mutual inductors, Junction Diode model, Model and Device Parameters |
|
|
|
@section Inductor: Inductors |
|
|
|
@example |
|
|
|
|
|
|
|
------------------------------------------------------------ |
|
|
|
| Inductor - instance parameters (input-output) | |
|
|
|
@ -7353,10 +7384,12 @@ and model, but are provided as a quick reference guide. |
|
|
|
p instantaneous power dissipated by the inductor |
|
|
|
| | |
|
|
|
------------------------------------------------------------- |
|
|
|
@end example |
|
|
|
|
|
|
|
|
|
|
|
@node Mutual inductors, Independent current source, Inductor, Model and Device Parameters |
|
|
|
@section mutual: Mutual inductors |
|
|
|
@example |
|
|
|
|
|
|
|
------------------------------------------------------------ |
|
|
|
| mutual - instance parameters (input-output) | |
|
|
|
@ -7366,10 +7399,12 @@ and model, but are provided as a quick reference guide. |
|
|
|
| inductor1 First coupled inductor | |
|
|
|
| inductor2 Second coupled inductor | |
|
|
|
------------------------------------------------------------ |
|
|
|
@end example |
|
|
|
|
|
|
|
|
|
|
|
@node Independent current source, Junction Field effect transistor, Mutual inductors, Model and Device Parameters |
|
|
|
@section Isource: Independent current source |
|
|
|
@example |
|
|
|
|
|
|
|
------------------------------------------------------------ |
|
|
|
| Isource - instance parameters (input-only) | |
|
|
|
@ -7411,10 +7446,12 @@ and model, but are provided as a quick reference guide. |
|
|
|
| v Voltage across the supply | |
|
|
|
| p Power supplied by the source | |
|
|
|
------------------------------------------------------------ |
|
|
|
@end example |
|
|
|
|
|
|
|
|
|
|
|
@node Junction Field effect transistor, Lossy transmission line, Independent current source, Model and Device Parameters |
|
|
|
@section JFET: Junction Field effect transistor |
|
|
|
@example |
|
|
|
|
|
|
|
------------------------------------------------------------ |
|
|
|
| JFET - instance parameters (input-output) | |
|
|
|
@ -7472,7 +7509,7 @@ and model, but are provided as a quick reference guide. |
|
|
|
| rd Drain ohmic resistance | |
|
|
|
| rs Source ohmic resistance | |
|
|
|
| cgs G-S junction capactance | |
|
|
|
| continued | |
|
|
|
| continued | |
|
|
|
------------------------------------------------------------ |
|
|
|
|
|
|
|
|
|
|
|
@ -7498,10 +7535,12 @@ and model, but are provided as a quick reference guide. |
|
|
|
| gd Drain conductance | |
|
|
|
| gs Source conductance | |
|
|
|
------------------------------------------------------------ |
|
|
|
@end example |
|
|
|
|
|
|
|
|
|
|
|
@node Lossy transmission line, GaAs MESFET model, Junction Field effect transistor, Model and Device Parameters |
|
|
|
@section LTRA: Lossy transmission line |
|
|
|
@example |
|
|
|
|
|
|
|
------------------------------------------------------------ |
|
|
|
| LTRA - instance parameters (input-only) | |
|
|
|
@ -7541,22 +7580,24 @@ and model, but are provided as a quick reference guide. |
|
|
|
|len length of line | |
|
|
|
|nocontrol No timestep control | |
|
|
|
|steplimit always limit timestep to 0.8*(delay of line) |
|
|
|
| continued | |
|
|
|
| continued | |
|
|
|
------------------------------------------------------------ |
|
|
|
|
|
|
|
----------------------------------------------------------------------------------- |
|
|
|
| LTRA - model input-output parameters - continued | |
|
|
|
|----------------------------------------------------------------------------------+ |
|
|
|
|nosteplimit don't always limit timestep to 0.8*(delay of line) | |
|
|
|
|lininterp use linear interpolation | |
|
|
|
|quadinterp use quadratic interpolation | |
|
|
|
|mixedinterp use linear interpolation if quadratic results look unacceptable | |
|
|
|
----------------------------------------------------------------------------------- |
|
|
|
|truncnr use N-R iterations for step calculation in LTRAtrunc | |
|
|
|
|truncdontcut don't limit timestep to keep impulse response calculation errors low |
|
|
|
|compactrel special reltol for straight line checking | |
|
|
|
|compactabs special abstol for straight line checking | |
|
|
|
----------------------------------------------------------------------------------- |
|
|
|
--------------------------------------------------------------------- |
|
|
|
| LTRA - model input-output parameters - continued | |
|
|
|
|---------------------------------------------------------------------+ |
|
|
|
|nosteplimit don't always limit timestep to 0.8*(delay of line) | |
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|lininterp use linear interpolation | |
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|quadinterp use quadratic interpolation | |
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|mixedinterp use linear interpolation if quadratic results | |
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| look unacceptable | |
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--------------------------------------------------------------------- |
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|truncnr use N-R iterations for step calculation in LTRAtrunc | |
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|truncdontcut don't limit timestep to keep impulse response | |
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| calculation errors low | |
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|compactrel special reltol for straight line checking | |
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|compactabs special abstol for straight line checking | |
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--------------------------------------------------------------------- |
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------------------------------------------------------------ |
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@ -7565,10 +7606,12 @@ and model, but are provided as a quick reference guide. |
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| rel Rel. rate of change of deriv. for bkpt | |
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| abs Abs. rate of change of deriv. for bkpt | |
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------------------------------------------------------------ |
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@end example |
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@node GaAs MESFET model, Level 1 MOSfet model, Lossy transmission line, Model and Device Parameters |
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@section MES: GaAs MESFET model |
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@example |
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|
------------------------------------------------------------ |
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| MES - instance parameters (input-output) | |
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|
@ -7656,10 +7699,12 @@ and model, but are provided as a quick reference guide. |
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| depl_cap Depletion capacitance | |
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| vcrit Critical voltage | |
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|
------------------------------------------------------------ |
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|
@end example |
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|
@node Level 1 MOSfet model, Level 2 MOSfet model, GaAs MESFET model, Model and Device Parameters |
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|
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@section Mos1: Level 1 MOSfet model with Meyer capacitance model |
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|
@example |
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|
------------------------------------------------------------ |
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|
| Mos1 - instance parameters (input-only) | |
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|
|
@ -7826,10 +7871,12 @@ and model, but are provided as a quick reference guide. |
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|
|-----------------------------------------------------------+ |
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|
| type N-channel or P-channel MOS | |
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|
------------------------------------------------------------ |
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|
|
@end example |
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|
|
@node Level 2 MOSfet model, Level 3 MOSfet model, Level 1 MOSfet model, Model and Device Parameters |
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|
|
@section Mos2: Level 2 MOSfet model with Meyer capacitance model |
|
|
|
@example |
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|
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|
------------------------------------------------------------ |
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|
|
| Mos2 - instance parameters (input-only) | |
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|
|
@ -8001,10 +8048,12 @@ and model, but are provided as a quick reference guide. |
|
|
|
|-----------------------------------------------------------+ |
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|
|
| type N-channel or P-channel MOS | |
|
|
|
------------------------------------------------------------ |
|
|
|
@end example |
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|
|
|
|
|
@node Level 3 MOSfet model, Level 6 MOSfet model, Level 2 MOSfet model, Model and Device Parameters |
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|
|
@section Mos3: Level 3 MOSfet model with Meyer capacitance model |
|
|
|
@example |
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|
|
|
|
|
|
|
|
|
|
------------------------------------------------------------ |
|
|
|
@ -8179,10 +8228,12 @@ and model, but are provided as a quick reference guide. |
|
|
|
|-----------------------------------------------------------+ |
|
|
|
| type N-channel or P-channel MOS | |
|
|
|
------------------------------------------------------------ |
|
|
|
@end example |
|
|
|
|
|
|
|
|
|
|
|
@node Level 6 MOSfet model, Simple linear resistor, Level 3 MOSfet model, Model and Device Parameters |
|
|
|
@section Mos6: Level 6 MOSfet model with Meyer capacitance model |
|
|
|
@example |
|
|
|
|
|
|
|
|
|
|
|
------------------------------------------------------------ |
|
|
|
@ -8353,10 +8404,12 @@ and model, but are provided as a quick reference guide. |
|
|
|
|-----------------------------------------------------------+ |
|
|
|
| type N-channel or P-channel MOS | |
|
|
|
------------------------------------------------------------ |
|
|
|
@end example |
|
|
|
|
|
|
|
|
|
|
|
@node Simple linear resistor, Ideal voltage controlled switch, Level 6 MOSfet model, Model and Device Parameters |
|
|
|
@section Resistor: Simple linear resistor |
|
|
|
@example |
|
|
|
|
|
|
|
------------------------------------------------------------ |
|
|
|
| Resistor - instance parameters (input-output) | |
|
|
|
@ -8393,10 +8446,12 @@ and model, but are provided as a quick reference guide. |
|
|
|
| defw Default device width | |
|
|
|
| tnom Parameter measurement temperature | |
|
|
|
------------------------------------------------------------ |
|
|
|
@end example |
|
|
|
|
|
|
|
|
|
|
|
@node Ideal voltage controlled switch, Lossless transmission line, Simple linear resistor, Model and Device Parameters |
|
|
|
@section Switch: Ideal voltage controlled switch |
|
|
|
@example |
|
|
|
|
|
|
|
------------------------------------------------------------ |
|
|
|
| Switch - instance parameters (input-only) | |
|
|
|
@ -8441,10 +8496,12 @@ and model, but are provided as a quick reference guide. |
|
|
|
| gon Conductance when closed | |
|
|
|
| goff Conductance when open | |
|
|
|
------------------------------------------------------------ |
|
|
|
@end example |
|
|
|
|
|
|
|
|
|
|
|
@node Lossless transmission line, Voltage controlled current source, Ideal voltage controlled switch, Model and Device Parameters |
|
|
|
@section Tranline: Lossless transmission line |
|
|
|
@example |
|
|
|
|
|
|
|
------------------------------------------------------------ |
|
|
|
| Tranline - instance parameters (input-only) | |
|
|
|
@ -8481,10 +8538,12 @@ and model, but are provided as a quick reference guide. |
|
|
|
| neg_node2 Negative node of end 2 of t. line | |
|
|
|
| delays Delayed values of excitation | |
|
|
|
------------------------------------------------------------ |
|
|
|
@end example |
|
|
|
|
|
|
|
|
|
|
|
@node Voltage controlled current source, Voltage controlled voltage source, Lossless transmission line, Model and Device Parameters |
|
|
|
@section VCCS: Voltage controlled current source |
|
|
|
@example |
|
|
|
|
|
|
|
------------------------------------------------------------ |
|
|
|
| VCCS - instance parameters (input-only) | |
|
|
|
@ -8512,10 +8571,12 @@ and model, but are provided as a quick reference guide. |
|
|
|
| v Voltage across output | |
|
|
|
| p Power | |
|
|
|
------------------------------------------------------------ |
|
|
|
@end example |
|
|
|
|
|
|
|
|
|
|
|
@node Voltage controlled voltage source, Independent voltage source, Voltage controlled current source, Model and Device Parameters |
|
|
|
@section VCVS: Voltage controlled voltage source |
|
|
|
@example |
|
|
|
|
|
|
|
------------------------------------------------------------ |
|
|
|
| VCVS - instance parameters (input-only) | |
|
|
|
@ -8543,10 +8604,12 @@ and model, but are provided as a quick reference guide. |
|
|
|
| v Output voltage | |
|
|
|
| p Power | |
|
|
|
------------------------------------------------------------ |
|
|
|
@end example |
|
|
|
|
|
|
|
|
|
|
|
@node Independent voltage source, , Voltage controlled voltage source, Model and Device Parameters |
|
|
|
@section Vsource: Independent voltage source |
|
|
|
@example |
|
|
|
|
|
|
|
------------------------------------------------------------ |
|
|
|
| Vsource - instance parameters (input-only) | |
|
|
|
@ -8587,5 +8650,6 @@ and model, but are provided as a quick reference guide. |
|
|
|
| i Voltage source current | |
|
|
|
| p Instantaneous power | |
|
|
|
------------------------------------------------------------ |
|
|
|
@end example |
|
|
|
|
|
|
|
@bye |